power module

Abstract

The application provides a power module. An AC input pin, a DC positive terminal pin, a DC negative terminal pin, an output midpoint pin, a plurality of driving pins and the output midpoint pin respectively occupy three different corners of a substrate. The plurality of driving pins occupy another corner of the substrate. A midpoint of series connection of a first diode and a second diode is electrically connected to the AC input pin, and the first diode and the second diode are respectively connected to the DC positive terminal pin and the DC negative terminal pin. A bidirectional switch is connected between the midpoint of series connection of the first diode and the second diode and the output midpoint pin, and a driving end of the bidirectional switch is connected to the plurality of driving pins. Thus, the power module can reduce the lead inductance of packaging and the total number of components, and realize modularization.

Description

Technical Field

[0001] This case relates to a circuit module structure, particularly a power module, which integrates multiple power chips through a modular packaging design, reducing the lead inductance of the package and the total number of components, thereby reducing assembly errors and increasing power density. Background Technology

[0002] The Vienna rectifier is a commonly used low-cost, high-performance three-phase rectifier topology that can accept three-phase AC power and also serves as a power factor correction circuit. However, the Vienna rectifier has a relatively long commutation loop. Although solutions based on discrete components are low-cost, the large parasitic inductance of the discrete component packages can easily lead to large voltage spikes when the switching transistors operate, necessitating the use of higher-grade switching transistors and thus increasing costs.

[0003] On the other hand, given the limited size, conventional compact layout solutions are often impossible to implement due to safety distance restrictions between high-voltage components, further increasing loop inductance. Additionally, discrete solutions introduce thermal resistance errors when assembled with heatsinks, leading to overheating risks for some components.

[0004] In view of this, it is necessary to provide a power module that integrates multiple power chips through a modular packaging design, thereby reducing the lead inductance and total number of components in the package, thus reducing assembly errors and increasing power density, and addressing the deficiencies of conventional technologies. Utility Model Content

[0005] The purpose of this invention is to provide a power module that integrates multiple power chips through a modular packaging design, thereby reducing the lead inductance and total number of components in the package, thus reducing assembly errors and increasing power density.

[0006] Another objective of this invention is to provide a power module. By integrating multiple power chips and multiple conductive pins onto a single substrate through modular packaging, the lead inductance of the package is reduced, and the total number of components is decreased. This facilitates application to the basic unit of each phase in a three-phase Vienna topology or to a dual-boost bridgeless topology. To fully utilize the dimensions of the single substrate, the DC positive terminal pin, DC negative terminal pin, and output midpoint pin of the power module occupy three different corners of the substrate, while multiple drive pins occupy the other corner, thus meeting safety requirements with minimal space constraints. Since multiple drive pins are low-voltage drives, while other pins are high-voltage pins, having multiple drive pins occupy a corner helps avoid electromagnetic interference. Furthermore, the AC input pins are arranged between the DC positive terminal pin and the DC negative terminal pin, facilitating the routing of external components with minimal distance. On the other hand, if the power module requires two sets of buffer capacitors to suppress voltage or current surges to protect sensitive electronic components, these two sets of buffer capacitors must be connected between the DC positive terminal pin and the output midpoint pin, and between the DC negative terminal pin and the output midpoint pin, respectively. The DC positive terminal pin, DC negative terminal pin, and output midpoint pin occupy three different corners of the substrate, ensuring that the insulation distance meets safety regulations. Using a single direct-bonding ceramic substrate (DBC) facilitates the mounting of the power chip and pins and aids in heat dissipation. The surface of the power chip can be electrically connected via bonding wires, and finally, it is encapsulated in a potting compound. Furthermore, the power module may also include other auxiliary components such as negative temperature coefficient thermistors (NTCs). The two additional low-potential pins required for these auxiliary components can be arranged in the middle of each side, maintaining a certain distance from other pins to avoid interference. Of course, this application is not limited to this.

[0007] To achieve the aforementioned objectives, this invention provides a power module, including a substrate, an AC input pin, a DC positive terminal pin, a DC negative terminal pin, an output midpoint pin, multiple drive pins, a first diode, a second diode, and a bidirectional switch unit. The substrate has four corners. The AC input pin, DC positive terminal pin, DC negative terminal pin, output midpoint pin, multiple drive pins, and output midpoint pin occupy three different corners of the substrate, and the multiple drive pins occupy the other corner. The first diode and the second diode are disposed on the substrate, spatially opposite a first side. The midpoint of the series connection between the first diode and the second diode is electrically connected to the AC input pin, and the first diode and the second diode are respectively connected to the DC positive terminal pin and the DC negative terminal pin. The bidirectional switch is disposed on the substrate, spatially opposite a second side, wherein the bidirectional switch unit is connected between the midpoint of the series connection between the first diode and the second diode and the output midpoint pin, and the drive terminal of the bidirectional switch is connected to the multiple drive pins.

[0008] In one embodiment, the substrate includes a first side and a second side opposite to each other, a DC negative terminal pin and a DC positive terminal pin are disposed along the first side plate and are respectively located at two opposite corners of the first side; an output midpoint pin and a plurality of drive pins are disposed along the second side and are respectively located at two opposite corners of the second side.

[0009] In one embodiment, the DC negative terminal pin, the AC input pin, and the DC positive terminal pin are arranged along a first side, with the AC input pin located between the DC negative terminal pin and the DC positive terminal pin.

[0010] In one embodiment, the cathode of the first diode is connected to the DC positive terminal pin, the anode of the first diode is connected to the AC input pin, the anode of the second diode is connected to the DC negative terminal pin, and the cathode of the second diode is connected to the AC input pin.

[0011] In one embodiment, the bidirectional switching unit includes a first power transistor and a second power transistor, disposed on a substrate.

[0012] In one embodiment, the first end of the first power transistor is connected to the AC input pin, the first end of the second power transistor is connected to the output midpoint pin, and the second ends of the first power transistor and the second power transistor are connected together by a bonding wire.

[0013] In one embodiment, the plurality of driving pins includes at least a first driving pin, a second driving pin, a third driving pin, and a fourth driving pin, and the third end of the first power transistor is connected to the first driving pin, the second end of the first power transistor is connected to the second driving pin, the third end of the second power transistor is connected to the third driving pin, and the second end of the second power transistor is connected to the fourth driving pin.

[0014] In one embodiment, the plurality of driving pins includes at least a first driving pin, a second driving pin, and a third driving pin, and the third terminal of the first power transistor is connected to the first driving pin, the second terminals of the first power transistor and the second power transistor are connected to the second driving pin, and the third terminal of the second power transistor is connected to the third driving pin.

[0015] In one embodiment, the substrate includes an AC input metal layer, a DC positive terminal metal layer, a DC negative terminal metal layer, an output midpoint metal layer, and a plurality of driving metal layers disposed on the surface of the substrate, wherein the AC input pin, the DC positive terminal pin, the DC negative terminal pin, the output midpoint pin, and the plurality of driving pins are respectively disposed on the AC input metal layer, the DC positive terminal metal layer, the DC negative terminal metal layer, the output midpoint metal layer, and the plurality of driving metal layers.

[0016] In one embodiment, the substrate includes a first side and a second side opposite to each other, a DC negative terminal metal layer, an AC input metal layer and a DC positive terminal metal layer are disposed opposite to the first side, the AC input metal layer is located between the DC negative terminal metal layer and the DC positive terminal metal layer, and an output midpoint metal layer and a plurality of driving metal layers are disposed opposite to the second side.

[0017] In one embodiment, the AC input metal layer is located between the output midpoint metal layer, the DC negative terminal metal layer, and the DC positive terminal metal layer.

[0018] In one embodiment, a first diode is disposed on the AC input metal layer and connected to the AC input metal layer via a bonding wire; a second diode is disposed on the AC input metal layer and connected to the DC negative terminal metal layer via a bonding wire.

[0019] In one embodiment, a first power transistor and a second power transistor are respectively disposed on an AC input metal layer and an output midpoint metal layer, wherein a first end of the first power transistor is connected to the AC input metal layer, a first end of the second power transistor is connected to the output midpoint metal layer, and the second ends of the first power transistor and the second power transistor are connected together by a bonding wire. The second and third ends of the first power transistor and the second power transistor are respectively electrically connected to a plurality of driving metal layers by bonding wires.

[0020] In one embodiment, a plurality of drive pins are located on one corner formed by a second side and a third side, and are arranged sequentially along the third side, wherein the third side is perpendicular to the second side.

[0021] In one embodiment, there are multiple DC positive terminal pins, multiple DC negative terminal pins, multiple AC input pins, and multiple output midpoint pins.

[0022] In one embodiment, the bidirectional switching unit consists of two IGBT, MOS, and GaN switching transistor chips with opposite directions, or it consists of a single bidirectional GaN chip.

[0023] In one embodiment, the power module further includes a thermistor and two thermistor pins, wherein the thermistor is disposed on the substrate through a conductive metal layer, and the two thermistor pins are disposed on the conductive metal layer and electrically connected to the two ends of the thermistor.

[0024] In one embodiment, the power module further includes two sets of buffer capacitors, wherein the two sets of buffer capacitors are electrically connected between the DC positive terminal pin and the output midpoint pin, and between the DC negative terminal pin and the output midpoint pin, respectively.

[0025] In one embodiment, the power module further includes a potting compound disposed on a substrate, covering a first diode, a second diode, and a bidirectional switch, and allowing an AC input pin, a DC positive terminal pin, a DC negative terminal pin, an output midpoint pin, and multiple drive pins to be led out.

[0026] In one embodiment, the bidirectional switching unit is composed of multiple switching transistor chips connected in parallel.

[0027] In one embodiment, the substrate is a direct copper-clad ceramic substrate.

[0028] In one embodiment, the power module is applied to the basic unit of each phase in a three-phase Vienna topology or to a dual-boost bridgeless topology.

[0029] The beneficial effect of this invention is that the embodiments provide a power module. By having the DC positive terminal pin, DC negative terminal pin, and output midpoint pin occupy three different corners of the substrate, while multiple drive pins occupy the other corner, safety requirements can be met with minimal space constraints. The AC input pins are arranged between the DC positive and DC negative terminal pins, facilitating the routing of peripheral devices with minimal distance. In this way, multiple power chips and multiple pins can be modularly packaged on a single substrate, reducing package lead inductance and the total number of components. This not only solves assembly error problems but also optimizes the overall power density. Attached Figure Description

[0030] The following detailed description of the case and the schematic diagrams of the embodiments are intended to enable those skilled in the art to fully understand the above content, and are not intended to limit the case.

[0031] Figure 1 This is a three-dimensional structural diagram of the power module of the first embodiment of this case.

[0032] Figure 2 This is a top view of the power module of the first embodiment of this case.

[0033] Figure 3 This is a circuit diagram illustrating the power module of the first embodiment of this case.

[0034] Figure 4 This is an example of applying the power module of the first embodiment of this case to a three-phase Vienna topology.

[0035] Figure 5 This is another example of the power module of the first embodiment of this case being applied to a three-phase Vienna topology.

[0036] Figure 6 This is an example of applying the power module of the first embodiment of this case to a dual-boost bridgeless topology.

[0037] Figure 7 This is a perspective structural diagram of the power module of the first embodiment of this case from a bottom view.

[0038] Figure 8 This is a three-dimensional structural diagram of the power module of the second embodiment of this case.

[0039] Figure 9 This is a top view of the power module of the third embodiment of this case.

[0040] Figure 10 This is a circuit diagram illustrating the power module of the third embodiment of this case. Detailed Implementation

[0041] Some typical embodiments embodying the features and advantages of this invention will be described in detail in the following description. It should be understood that this invention can have various variations in different forms, all of which do not depart from the scope of this invention, and the descriptions and drawings herein are essentially for illustrative purposes and not for limiting this invention. For example, if the following disclosure describes a first feature disposed on or above a second feature, it indicates that it includes embodiments where the first and second features are in direct contact, and also includes embodiments where additional features can be disposed between the first and second features, so that the first and second features may not be in direct contact. Furthermore, different embodiments in this disclosure may use repeated reference numerals and / or markings. These repetitions are for simplification and clarity and are not intended to limit the various embodiments and / or the relationship between the described appearance structures. Moreover, to facilitate the description of the relationship between one component or feature and another (plural) component or feature in the drawings, spatially related terms such as "top," "bottom," "upper," "lower," and similar terms may be used. In addition to the orientations illustrated in the diagrams, spatially related terms are used to cover different orientations of the device in use or operation. The device may also be otherwise positioned (e.g., rotated 90 degrees or located in other orientations), and the descriptions of the spatially related terms used will be interpreted accordingly. Furthermore, when a component is referred to as "connected to" or "coupled to" another component, it may be directly connected to or coupled to the other component, or there may be intervening components. Although the numerical ranges and parameters of the broad scope disclosed herein are approximate, the values ​​are stated as precisely as possible in specific examples. Additionally, it is understood that while terms such as "first," "second," etc., may be used in the claims to describe different components, these components should not be limited by these terms, and the components described accordingly in the embodiments are represented by different component symbols. These terms are used to distinguish different components. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of the embodiments. The term "and / or" as thus used includes any or all combinations of one or more of the related listed items.

[0042] Figure 1 This is a three-dimensional structural diagram of the power module of the first embodiment of this case. Figure 2 This is a top view of the power module of the first embodiment of this case. Figure 3This is a circuit diagram illustrating the power module according to the first embodiment of this invention. In this embodiment, a power module 1 is provided, including a substrate 10, an AC input pin AC, a DC positive pin DC+, a DC negative pin DC-, an output midpoint pin CT, multiple drive pins G1, E1, E2, G2, a first diode D1, a second diode D2, and a bidirectional switch. The substrate 10 includes four corners and a first side 101 and a second side 102 opposite to each other. The four corners are located at both ends of the first side 101 and the second side 102. The AC input pin AC, the DC positive pin DC+, the DC negative pin DC-, the output midpoint pin CT, and the multiple drive pins G1, E1, E2, G2 are disposed on the surface of the substrate 10. In this embodiment, the DC negative pin DC-, the AC input pin AC, and the DC positive pin DC+ are arranged along the first side 101, with the AC input pin AC located between the DC negative pin DC- and the DC positive pin DC+. Furthermore, the DC negative terminal pin DC- and the DC positive terminal pin DC+ are located at two opposite corners of the first side 101, that is... Figure 2 The lower left and lower right corners; of course, in other embodiments, the positions of the DC negative terminal pin DC- and the DC positive terminal pin DC+ can be interchanged. Additionally, in this embodiment, the output midpoint pin CT and multiple drive pins G1, E1, E2, G2 are arranged along the second side 102 and located at two opposite corners of the second side 102, i.e. Figure 2 The upper left and upper right corners are used. Of course, in other embodiments, the positions of the output midpoint pin CT and the multiple drive pins G1, E1, E2, and G2 can be interchanged. Furthermore, in other embodiments, the output midpoint pin CT can be swapped with the DC positive terminal pin DC+, in which case the side where the DC positive terminal pin DC+ and the DC negative terminal pin DC- are located is the first side 101. Additionally, preferably, the AC input pin AC is also moved accordingly to between the DC positive terminal pin DC+ and the DC negative terminal pin DC-. The positions of each pin corresponding to the four corners of the substrate 10 are not listed here individually. As long as, in principle, the DC positive terminal pin DC+, the DC negative terminal pin DC-, and the output midpoint pin CT occupy three different corners of the substrate 10, while the multiple drive pins G1, E1, E2, and G2 occupy the other corner of the substrate 10, safety requirements can be met with minimal space constraints.

[0043] In this embodiment, the first diode D1 and the second diode D2 are disposed on the surface of the substrate 10, spatially opposite to the first side 101. The midpoint of the series connection between the first diode D1 and the second diode D2 is electrically connected to the AC input pin AC, and the first diode D1 and the second diode D2 are respectively connected to the DC positive terminal pin DC+ and the DC negative terminal pin DC-. In other words, the first diode D1 constitutes an upper bridge arm diode, and the second diode constitutes a lower bridge arm diode. In this embodiment, the bidirectional switching unit includes a first power transistor S1 and a second power transistor S2 connected back-to-back. In other embodiments, the bidirectional switching unit may be composed of two IGBT, MOS, or GaN switching transistor chips with opposite directions, or composed of a single bidirectional GaN chip. Of course, the bidirectional switching unit may also be composed of multiple switching transistor chips connected in parallel to meet the needs of high-power applications. This embodiment is not limited to this. In this embodiment, the first power transistor S1 and the second power transistor S2 are disposed on the surface of the substrate 10, spatially opposite to the second side 102, and electrically connected between the AC input pin AC and the output midpoint pin CT to form a bidirectional switching unit. In this embodiment, the first power transistor S1 and the second power transistor S2 are also connected to multiple drive pins G1, E1, E2, and G2, respectively.

[0044] In this embodiment, the cathode of the first diode D1 is connected to the DC positive terminal pin DC+, and the anode of the first diode D1 is connected to the AC input pin AC. The anode of the second diode D2 is connected to the DC negative terminal pin DC-, and the cathode of the second diode D2 is connected to the AC input pin AC. Additionally, in this embodiment, the first terminal of the first power transistor S1 is connected to the AC input pin AC, and the first terminal of the second power transistor S2 is connected to the output midpoint pin CT. The second terminals of the first power transistor S1 and the second terminals of the second power transistor S2 are connected together via bonding wire 23. The second and third terminals of the first power transistor S1 and the second and third terminals of the second power transistor S2 are also respectively connected to multiple drive pins G1, E1, E2, and G2. Specifically, drive pin G1 is the first drive pin, drive pin E1 is the second drive pin, drive pin G2 is the third drive pin, and drive pin E2 is the fourth drive pin. The third terminal of the first power transistor S1 is connected to the first drive pin G1, the second terminal of the first power transistor S1 is connected to the second drive pin E1, the third terminal of the second power transistor S2 is connected to the third drive pin G2, and the second terminal of the second power transistor S2 is connected to the fourth drive pin E2. It should be noted that in this embodiment, to fully utilize the length and width dimensions of a single substrate, the DC positive terminal pin DC+, the DC negative terminal pin DC-, and the output midpoint pin CT occupy three different corners of the substrate 10, while the multiple drive pins G1, E1, E2, and G2 occupy the other corner of the substrate 10, thus meeting safety requirements with minimal space consumption. Since multiple drive pins G1, E1, E2, and G2 are low-voltage drives, while the AC input pin (AC), DC positive pin (DC+), DC negative pin (DC-), and output midpoint pin (CT) are high-voltage pins, having multiple drive pins G1, E1, E2, and G2 occupy a corner helps avoid electromagnetic interference. Furthermore, because the AC input pin (AC), DC positive pin (DC+), DC negative pin (DC-), and output midpoint pin (CT) are high-voltage pins, the current flowing through these pins is also relatively large in high-power power supply applications. Therefore, multiple of these pins can be used to increase current carrying capacity and prevent excessive current from being handled by a single pin. Of course, the example given in this embodiment shows that multiple drive pins are located on the corner formed by the second side 102 and the third side 103, and are arranged sequentially along the third side 103. However, those skilled in the art should understand that the arrangement of the multiple drive pins G1, E1, E2, and G2 can be adjusted according to actual application requirements, and is not limited to any particular order or location on the same corner. For example, drive pins G2 and E2 can be arranged along the second side 102, while drive pins G1 and E1 can be arranged along the third side. In addition, the DC positive terminal pin DC+, AC input pin AC, and DC negative terminal pin DC- are arranged in a straight line along the first side 101, which helps peripheral devices to achieve stepping lines with the shortest possible distance.

[0045] Of course, in other embodiments, drive pins E1 and E2 can be formed from the same pin, that is, multiple drive pins include at least drive pins G1, E1 (E2), and G2. The third terminal of the first power transistor S1 is connected to the first drive pin G1, the second terminals of both the first power transistor S1 and the second power transistor S2 are connected to the second drive pin E1 (E2), and the third terminal of the second power transistor S2 is connected to the third drive pin G2. This application only uses four drive pins as an example for illustration.

[0046] In this embodiment, the substrate 10 is, for example, a direct copper-clad ceramic substrate, including an AC input metal layer 11, a DC positive terminal metal layer 12, a DC negative terminal metal layer 13, an output midpoint metal layer 14, and a plurality of driving metal layers 15, 16, 17, and 18, disposed on the upper surface of the substrate 10. The DC negative terminal metal layer 13, the AC input metal layer 11, and the DC positive terminal metal layer 12 are disposed opposite to the first side 101, with the AC input metal layer 11 located between the DC negative terminal metal layer 13 and the DC positive terminal metal layer 12. Furthermore, the output midpoint metal layer 14 and the plurality of driving metal layers 15, 16, 17, and 18 are disposed opposite to the second side 102. In this embodiment, the AC input metal layer 11 is located between the output midpoint metal layer 14, the DC negative terminal metal layer 13, and the DC positive terminal metal layer 12. In this embodiment, the first diode D1 and the second diode D2 are respectively disposed on the DC positive terminal metal layer 12 and the AC input metal layer 11. The anode of the first diode D1 is connected to the AC input metal layer 11 through a bonding wire 21, and the anode of the second diode D2 is connected to the DC negative terminal metal layer 13 through a bonding wire 22. This achieves a series connection between the first diode D1 and the second diode D2 between the DC positive terminal pin DC+ and the DC negative terminal pin DC-, with the midpoint of their series connection connected to the AC input pin AC. In this embodiment, the first power transistor S1 and the second power transistor S2 are respectively disposed on the AC input metal layer 11 and the output midpoint metal layer 14. The first end of the first power transistor S1 is connected to the AC input metal layer 11, and the first end of the second power transistor S2 is connected to the output midpoint metal layer 14. The second ends of the first power transistor S1 and the second ends of the second power transistor S2 are connected together through a bonding wire. The second and third ends of the first power transistor S1 and the second power transistor S2 are electrically connected to multiple driving metal layers 15, 16, 17, and 18 through bonding wires.

[0047] In this embodiment, the AC input pin AC, the DC positive terminal pin DC+, the DC negative terminal pin DC-, the output midpoint pin CT, and multiple drive pins G1, E1, E2, and G2 are respectively disposed on the AC input metal layer 11, the DC positive terminal metal layer 12, the DC negative terminal metal layer 13, the output midpoint metal layer 14, and multiple drive metal layers 15, 16, 17, and 18. That is, as long as the connection is made to the corresponding metal layer, an electrical connection with the corresponding pin on the metal layer can be achieved. In this embodiment, the cathode of the first diode D1 is connected to the DC positive terminal pin DC+ through the DC positive terminal metal layer 12, and the anode of the first diode D1 is connected to the AC input pin AC through the bonding wire 21 and the AC input metal layer 11. The anode of the second diode D2 is connected to the DC negative terminal pin DC- through the bonding wire 22 and the DC negative terminal metal layer 13, and the cathode of the second diode D2 is connected to the AC input pin AC through the AC input metal layer 11. In this embodiment, the first end of the first power transistor S1 is connected to the AC input pin AC via the AC input metal layer 11, and the first end of the second power transistor S2 is connected to the output midpoint pin CT via the output midpoint metal layer 14. The second ends of the first power transistor S1 and the second power transistor S2 are connected together via bonding wire 23 and electrically connected to the driving metal layers 16 and 17 via bonding wire 24, respectively. The third ends of the first power transistor S1 and the second power transistor S2 are connected to the driving metal layers 15 and 18 via bonding wire 25, respectively, thereby further connecting to multiple driving pins G1, E1, E2, and G2. In this embodiment, the multiple driving pins G1, E1, E2, and G2 are located at the corner formed by the second side 102 and the third side 103. Figure 2 The driving metal layers 15, 16, 17, 18 and the driving pins G1, E1, E2, G2 may also be arranged sequentially along the second side 102, and this invention is not limited thereto.

[0048] It should be noted that, in this embodiment, the power module 1 integrates the AC input pin AC, the DC positive terminal pin DC+, the DC negative terminal pin DC-, the output midpoint pin CT, multiple drive pins G1, E1, E2, G2, the first diode D1, the second diode D2, the first power transistor S1, and the second power transistor S2 onto a single substrate 10, which can reduce the lead inductance of the package and achieve the purpose of reducing the total number of components. Figure 4 This describes an exemplary example of the power module of the first embodiment of this invention applied to a three-phase Vienna topology. (Reference) Figures 1 to 4 The basic unit circuit of the power module 1 architecture in this case is as follows: Figure 3 As shown, in addition to being able to directly architect Figure 4Besides the combination of diodes D1, D2, and power transistors S1 and S2, combinations of diodes D3, D4, S3, and S4, as well as combinations of diodes D5, D6, S5, and S6, can also be constructed. In other words, by connecting three sets of power modules 1 between the three-phase AC voltages Va, Vb, and Vc, the AC-side boost inductors La, Lb, and Lc, and the DC-side upper and lower bus capacitors Cup and Cdown, the following can be achieved. Figure 4 The three-phase Vienna topology is shown.

[0049] Figure 5 This is another exemplary example of the power module of the first embodiment of this case applied to a three-phase Vienna topology. (Reference) Figures 1 to 3 and Figure 5 In this embodiment, the power module 1 further includes two sets of buffer capacitors C1 and C2. The placement of the buffer capacitors C1 and C2 on the substrate is not restricted. As long as buffer capacitor C1 is electrically connected between the DC positive terminal pin DC+ and the output midpoint pin CT of the three power modules 1, and buffer capacitor C2 is electrically connected between the DC negative terminal pin DC- and the output midpoint pin CT of the three power modules 1, the following can be achieved. Figure 5 Another exemplary application of the three-phase Vienna topology shown. It should be understood that the buffer capacitors C1 and C2 are not limited to single capacitors, but can also be composed of multiple capacitors connected in parallel.

[0050] Of course, the application of power module 1 in this case is not limited to this; it can be applied to any application containing... Figure 3 In the circuit topology of the basic unit shown. Figure 6 This invention discloses an exemplary example of the power module of the first embodiment of this case applied to a dual-boost bridgeless topology. The power module 1 of this invention connects the AC input pin (AC) to the AC voltage Va, and then connects diodes D3 and D4, the output voltage Vout, and the load Load to the DC positive pin (DC+), DC negative pin (DC-), and the output midpoint pin (CT), thereby achieving… Figure 6 The application of the dual-boost bridgeless topology is shown. Of course, the application of power module 1 in this case is not limited to this.

[0051] Figure 7 This is a perspective view of the power module according to the first embodiment of this invention from a lower perspective. In this embodiment, the substrate 10 used in the power module 1 is, for example, a direct copper-clad ceramic substrate. The copper plating on the front side of the substrate 10 is used to form the aforementioned AC input metal layer 11, DC positive terminal metal layer 12, DC negative terminal metal layer 13, output midpoint metal layer 14, and multiple drive metal layers 15, 16, 17, and 18 (see [link to documentation]). Figure 1The copper plating on the back of the substrate 10 can form a large copper surface 19 to dissipate the heat generated by the power module 1. Of course, this case is not limited to this.

[0052] Figure 8 This is a perspective structural diagram of the power module according to the second embodiment of this case. In this embodiment, the power module 1a and Figures 1 to 3 The power module 1 shown is similar, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1a further includes a potting compound 20, disposed on the substrate 10, covering the first diode D1, the second diode D2, the first power transistor S1, and the second power transistor S2 of the aforementioned power module 1 (see...). Figure 1 It allows the AC input pin (AC), DC positive pin (DC+), DC negative pin (DC+), output midpoint pin (CT), and multiple drive pins to be output. In this way, power module 1a constitutes a modular single device, helping to solve potential assembly errors and optimizing overall power density. Of course, this application is not limited to this. Furthermore, in practical applications, a heat sink can be directly attached to the back of power module 1a to achieve heat dissipation.

[0053] Figure 9 This is a top view of the power module of the third embodiment of this case. Figure 10 This is a circuit diagram illustrating the power module of the third embodiment of this case. In this embodiment, power module 1b and Figures 1 to 3 The power module 1b shown is similar to the one described above, and the same component designations represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1b further includes a thermistor NTC and thermistor pins T1 and T2, wherein the thermistor is disposed on the substrate 10 through two conductive metal layers 30. In this embodiment, the two thermistor pins T1 and T2 are respectively disposed on two separate conductive metal layers 30 and electrically connected to the two ends of the thermistor NTC. Thus, the power module 1b, in addition to having the same basic unit circuit structure as the aforementioned power module 1 on the substrate 10 (see...), Figure 3 In addition, another separate thermistor NTC (such as...) is also included in the architecture. Figure 10(As shown). It is worth noting that this embodiment takes the thermistor NTC located between the DC negative terminal pin DC- and the output midpoint pin CT as an example. Since the thermistor pins T1 and T2 are both low-potential pins, maintaining a certain distance from the DC negative terminal pin DC- and the output midpoint pin CT can avoid interference. However, the position of the thermistor NTC is not limited to this; it only needs to maintain a certain distance from other pins. In other embodiments, the power module 1b allows the addition of additional low-potential pins required for auxiliary components on the substrate 10, arranged in the middle of each side of the substrate 10, maintaining a certain distance from the output midpoint pin CT, the DC negative terminal pin DC-, the DC positive terminal pin DC+, and the AC input pin AC that occupy the corners, to avoid interference. Of course, this embodiment is not limited to this, and will not be elaborated further.

[0054] In summary, this invention provides a power module that integrates multiple power chips through a modular packaging design, reducing lead inductance and the total number of components, thereby reducing assembly errors and increasing power density. Modular packaging integrates multiple power chips and multiple conductive pins onto a single substrate, reducing lead inductance and the total number of components. This facilitates application as a basic unit in each phase of a three-phase Vienna topology or in a dual-boost bridgeless topology. To fully utilize the dimensions of the single substrate, the DC positive terminal pin, DC negative terminal pin, and output midpoint pin occupy three different corners of the substrate, while multiple drive pins occupy the other corner, thus meeting safety requirements with minimal space constraints. Since multiple drive pins are low-voltage drives, while other pins are high-voltage pins, having multiple drive pins occupy a corner helps avoid electromagnetic interference. Furthermore, the AC input pins are arranged between the DC positive and DC negative terminal pins, facilitating the routing of peripheral devices with minimal distance. On the other hand, when the power module requires two sets of buffer capacitors to suppress voltage or current surges to protect sensitive electronic components, the two sets of buffer capacitors must be connected between the DC positive terminal pin and the output midpoint pin, and between the DC negative terminal pin and the output midpoint pin, respectively. The DC positive terminal pin, DC negative terminal pin, and output midpoint pin occupy three different corners of the substrate, ensuring that the insulation distance meets safety regulations. Using a direct copper-clad ceramic substrate as the single substrate facilitates the mounting of the power chip and pins and aids in heat dissipation. The surface of the power chip can be electrically connected via bonding wires, and finally, it is encapsulated in a potting compound. Furthermore, the power module may also include other auxiliary components such as negative temperature coefficient thermistors. The two additional low-potential pins required for auxiliary components can be arranged in the middle of each side, maintaining a certain distance from other pins to avoid interference. Of course, this application is not limited to this.

[0055] This case can be modified in various ways by a person skilled in this technology, but all of them are subject to the protection sought by the attached patent application.

Claims

1. A power module, characterized in that, include: A substrate, including four corners; An AC input pin, a DC positive terminal pin, a DC negative terminal pin, an output midpoint pin, and multiple drive pins are disposed on the surface of the substrate, wherein the DC negative terminal pin, the DC positive terminal pin, and the output midpoint pin occupy three different corners of the substrate, and the multiple drive pins occupy the other corner of the substrate. A first diode and a second diode are disposed on the substrate, spatially opposite each other. The midpoint of the series connection between the first diode and the second diode is electrically connected to the AC input pin, and the first diode and the second diode are respectively connected to the DC positive terminal pin and the DC negative terminal pin; and A bidirectional switching unit is disposed on the substrate, spatially opposite to the other side, wherein the bidirectional switching unit is connected between the midpoint of the series connection of the first diode and the second diode and the output midpoint pin, and is connected to the plurality of drive pins.

2. The power module as described in claim 1, characterized in that, The substrate includes a first side and a second side opposite to each other. The DC negative terminal pin and the DC positive terminal pin are disposed along the first side and are respectively located at two opposite corners of the first side. The output midpoint pin and the plurality of drive pins are disposed along the second side and are respectively located at two opposite corners of the second side.

3. The power module as described in claim 2, characterized in that, The DC negative terminal pin, the AC input pin, and the DC positive terminal pin are arranged along the first side, with the AC input pin located between the DC negative terminal pin and the DC positive terminal pin.

4. The power module as described in claim 1, characterized in that, The cathode of the first diode is connected to the DC positive terminal pin, the anode of the first diode is connected to the AC input pin, the anode of the second diode is connected to the DC negative terminal pin, and the cathode of the second diode is connected to the AC input pin.

5. The power module as described in claim 1, characterized in that, The bidirectional switching unit includes a first power transistor and a second power transistor, which are disposed on the substrate.

6. The power module as described in claim 5, characterized in that, The first end of the first power transistor is connected to the AC input pin, the first end of the second power transistor is connected to the output midpoint pin, and the second ends of the first power transistor and the second power transistor are connected together by a bonding wire.

7. The power module as described in claim 5, characterized in that, The plurality of drive pins includes at least a first drive pin, a second drive pin, a third drive pin, and a fourth drive pin, wherein the third end of the first power transistor is connected to the first drive pin, the second end of the first power transistor is connected to the second drive pin, the third end of the second power transistor is connected to the third drive pin, and the second end of the second power transistor is connected to the fourth drive pin.

8. The power module as described in claim 5, characterized in that, The plurality of drive pins includes at least a first drive pin, a second drive pin, and a third drive pin, wherein the third terminal of the first power transistor is connected to the first drive pin, the second terminals of the first power transistor and the second power transistor are connected to the second drive pin, and the third terminal of the second power transistor is connected to the third drive pin.

9. The power module as described in claim 5, characterized in that, The substrate includes an AC input metal layer, a DC positive terminal metal layer, a DC negative terminal metal layer, an output midpoint metal layer, and a plurality of driving metal layers disposed on the surface of the substrate. The AC input pin, the DC positive terminal pin, the DC negative terminal pin, the output midpoint pin, and the plurality of driving pins are respectively disposed on the AC input metal layer, the DC positive terminal metal layer, the DC negative terminal metal layer, the output midpoint metal layer, and the plurality of driving metal layers.

10. The power module as described in claim 9, characterized in that, The substrate includes a first side and a second side opposite to each other. The DC negative terminal metal layer, the AC input metal layer and the DC positive terminal metal layer are disposed opposite to the first side. The AC input metal layer is located between the DC negative terminal metal layer and the DC positive terminal metal layer. The output midpoint metal layer and the plurality of drive metal layers are disposed opposite to the second side.

11. The power module as described in claim 10, characterized in that, The AC input metal layer is located between the output midpoint metal layer, the DC negative terminal metal layer, and the DC positive terminal metal layer.

12. The power module as described in claim 9, characterized in that, The first diode is disposed on the DC positive terminal metal layer and connected to the AC input metal layer via a bonding wire; the second diode is disposed on the AC input metal layer and connected to the DC negative terminal metal layer via a bonding wire.

13. The power module as described in claim 9, characterized in that, The first power transistor and the second power transistor are respectively disposed on the AC input metal layer and the output midpoint metal layer, wherein the first end of the first power transistor is connected to the AC input metal layer, the first end of the second power transistor is connected to the output midpoint metal layer, the second ends of the first power transistor and the second end of the second power transistor are connected together by bonding wires, and the second and third ends of the first power transistor and the second power transistor are respectively electrically connected to the plurality of driving metal layers by bonding wires.

14. The power module as described in claim 2, characterized in that, The plurality of drive pins are located on one corner formed by the second side and a third side, and are arranged sequentially along the third side, wherein the third side is perpendicular to the second side.

15. The power module as described in claim 1, characterized in that, The number of the DC positive terminal pin, the DC negative terminal pin, the AC input pin, and the output midpoint pin are all multiple.

16. The power module as described in claim 1, characterized in that, The bidirectional switching unit consists of two IGBT, MOS, and GaN switching transistors with opposite directions, or it can be composed of a single bidirectional GaN chip.

17. The power module as claimed in claim 1, characterized in that, It also includes a thermistor and two thermistor pins, wherein the thermistor is disposed on the substrate through a conductive metal layer, and the two thermistor pins are disposed on the conductive metal layer and electrically connected to the two ends of the thermistor.

18. The power module as claimed in claim 1, characterized in that, It also includes two sets of buffer capacitors, which are electrically connected between the DC positive terminal pin and the output midpoint pin, and between the DC negative terminal pin and the output midpoint pin, respectively.

19. The power module as described in claim 1, characterized in that, It also includes a potting compound disposed on the substrate, covering the first diode, the second diode and the bidirectional switch, and allowing the AC input pin, the DC positive terminal pin, the DC negative terminal pin, the output midpoint pin and the plurality of drive pins to be exposed.

20. The power module as described in claim 1, characterized in that, This bidirectional switching unit is composed of multiple switching transistor chips connected in parallel.

21. The power module as described in claim 1, characterized in that, The substrate is a direct copper-clad ceramic substrate.

22. The power module as described in claim 1, characterized in that, This power module can be used as a basic unit in each phase of a three-phase Vienna topology or in a dual-boost bridgeless topology.

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