A single-phase full-bridge power module

Abstract

The application discloses a single-phase full-bridge power module, comprising a substrate, a base island located on a first surface of the substrate, the base island comprising a first base island, a second base island and a third base island, a first power device, a second power device, a third power device and a fourth power device, the first power device and the second power device forming a first half-bridge unit, the third power device and the fourth power device forming a second half-bridge unit, the first half-bridge unit and the second half-bridge unit forming a single-phase full-bridge unit, the first power device and the third power device being located on the first base island, the second power device being located on the second base island, the fourth power device being located on the third base island, and the first power device being adjacent to the third power device. The single-phase full-bridge power module provided by the application adopts a reasonable layout to package power devices, reduces parasitic parameters, and improves the dynamic performance and loss of a circuit.

Description

Technical Field

[0001] This application relates to the field of semiconductor layout and packaging technology, and in particular to a packaging scheme for a single-phase full-bridge power semiconductor device. Background Technology

[0002] Power devices are driving elements for high-voltage, high-power-density circuits and are now widely used in electronic devices across various fields.

[0003] Taking power supply applications as an example, one of the main ways to use power devices in power supplies is to form a single-phase full-bridge structure, which is mainly achieved through discrete power devices. However, discrete power devices and driving circuits are far apart on the PCB, resulting in large parasitic parameters. Furthermore, the heat dissipation layout of discrete power devices is difficult, and the heat dissipation capacity is not high. In addition, it is difficult to directly detect the internal junction temperature of discrete power devices, so it is impossible to provide timely feedback on the internal temperature to protect the chip, resulting in low reliability. Utility Model Content

[0004] This application provides a single-phase full-bridge power module that reduces the size of the power module and reduces parasitic resistance.

[0005] A single-phase full-bridge power module includes:

[0006] substrate;

[0007] The base island is located on the first surface of the substrate, and includes a first base island, a second base island, and a third base island;

[0008] The first power device, the second power device, the third power device, and the fourth power device, the first power device and the second power device constitute the first half-bridge unit, the third power device and the fourth power device constitute the second half-bridge unit, and the first half-bridge unit and the second half-bridge unit constitute a single-phase full-bridge unit.

[0009] The first power device and the third power device are located on the first base island, the second power device is located on the second base island, and the fourth power device is located on the third base island. The first power device and the third power device are adjacent to each other.

[0010] Preferably, the first power device, the third power device, the second power device, and the fourth power device are arranged sequentially along the first direction.

[0011] Preferably, the third base island partially surrounds the second base island.

[0012] Preferably, the single-phase full-bridge power module includes power terminals and signal terminals. The power terminals include a DC positive terminal, a DC negative terminal, a first AC terminal, and a second AC terminal. The first end of the first power device and the first end of the third power device are electrically connected to the DC positive terminal. The second end of the second power device and the second end of the fourth power device are electrically connected to the DC negative terminal. The second end of the first power device and the first end of the second power device are electrically connected to the first AC terminal. The second end of the third power device and the first end of the fourth power device are electrically connected to the second AC terminal.

[0013] Preferably, the first end of the first power device and the first end of the third power device are located on the first base island and electrically connected to the first base island; the first end of the second power device is located on the second base island and electrically connected to the second base island; and the first end of the fourth power device is located on the third base island and electrically connected to the third base island.

[0014] Preferably, the second base island and the first AC terminal are integrated into one structure.

[0015] Preferably, the single-phase full-bridge power module further includes a molding compound, in which the substrate, base island, first power device, second power device, third power device and fourth power device are molded, and the molding compound includes opposing first side and second side.

[0016] Preferably, the DC positive terminal, DC negative terminal, first AC terminal, and second AC terminal are led out from the first side of the encapsulation.

[0017] Preferably, an AC terminal is sandwiched between the DC negative terminal and the DC positive terminal.

[0018] Preferably, the DC positive terminal, the first AC terminal, the DC negative terminal, and the second AC terminal are arranged sequentially on the first side of the encapsulation.

[0019] Preferably, the signal terminals include a first control terminal and a first Kelvin terminal of a first power device, a second control terminal and a second Kelvin terminal of a second power device, a third control terminal and a third Kelvin terminal of a third power device, and a fourth control terminal and a fourth Kelvin terminal of a fourth power device, wherein the first control terminal, the first Kelvin terminal, the second control terminal, the second Kelvin terminal, the third control terminal, the third Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal extend from the second side of the encapsulation.

[0020] Preferably, the first control terminal and the first Kelvin terminal on the second side are correspondingly provided with the DC positive terminal on the first side;

[0021] The third control terminal and the third Kelvin terminal on the second side are respectively set to correspond to the first AC terminal on the first side;

[0022] The second control terminal and the second Kelvin terminal on the second side are configured to correspond to the DC negative terminal on the first side.

[0023] The fourth control terminal and the fourth Kelvin terminal on the second side are configured to correspond to the second AC terminal on the first side.

[0024] Preferably, the first control terminal, the first Kelvin terminal, the third control terminal, the third Kelvin terminal, the second control terminal, the second Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal are arranged in sequence.

[0025] Preferably, the first control terminal, the first Kelvin terminal, the third control terminal, the third Kelvin terminal, the second control terminal, the second Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal correspond to the fourth base island, the fifth base island, the sixth base island, the seventh base island, the eighth base island, the ninth base island, the tenth base island, the eleventh base island, and the twelfth base island corresponding to the DC negative terminal.

[0026] Preferably, the first base island, the second base island, and the third base island are on the same horizontal plane.

[0027] Preferably, the first power device, the second power device, the third power device, and the fourth power device are on the same horizontal plane.

[0028] Preferably, the single-phase full-bridge power module further includes a temperature sampling circuit, with a temperature sampling terminal led out from the plastic package.

[0029] Preferably, the temperature sampling terminal and the signal terminal are on the same side of the encapsulation.

[0030] Preferably, the single-phase full-bridge power module is a surface-mount package or a plug-in package.

[0031] Preferably, the second surface of the substrate is a heat-dissipating metal.

[0032] Preferably, the molding compound further includes a third side and a fourth side opposite to each other, the third side being perpendicular to the first side, and the third side and the fourth side having a first positioning hole and a second positioning hole, respectively.

[0033] Preferably, the encapsulation also includes opposing third and fourth sides, with the temperature sampling terminal located on the third or fourth side or extended parallel to the surface of the encapsulation.

[0034] Preferably, the first power device, the second power device, the third power device, and the fourth power device are metal-oxide-semiconductor field-effect transistors, reverse-biased insulated-gate bipolar transistors, and high electron mobility transistors.

[0035] Preferably, the gate of the first power device is connected to the fourth base island via a bonding wire or a bonding metal sheet; the source of the first power device is connected to the fifth and second base islands via bonding wires or bonding metal sheets; the gate of the third power device is connected to the sixth base island via a bonding wire or a bonding metal sheet; the source of the third power device is connected to the seventh base island via a bonding wire or a bonding metal sheet; the gate of the second power device is connected to the eighth base island via a bonding wire or a bonding metal sheet, the source of the second power device is connected to the ninth base island via a bonding wire or a bonding metal sheet, and the drain of the second power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet, with the DC negative terminal located on the twelfth base island; the gate of the fourth power device is connected to the tenth base island via a bonding wire or a bonding metal sheet, the source of the fourth power device is connected to the eleventh base island via a bonding wire or a bonding metal sheet, and the drain of the fourth power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet.

[0036] Preferably, the first power device, the second power device, the third power device, and the fourth power device are combinations of insulated-gate bipolar transistors and diodes.

[0037] Preferably, the base of the first power device is connected to the fourth base island via a bonding wire or a bonding metal sheet; the emitter of the first power device is connected to the anode of the first diode, and the anode of the first diode is connected to the fifth and second base islands via bonding wires or bonding metal sheets; the base of the third power device is connected to the sixth base island via a bonding wire or a bonding metal sheet; the emitter of the third power device is connected to the anode of the third diode, and the anode of the third diode is connected to the seventh base island via a bonding wire or a bonding metal sheet; the base of the second power device is connected to the eighth base island via a bonding wire or a bonding metal sheet. The emitter of the second power device is connected to the anode of the second diode. The anode of the second diode is connected to the ninth base island via a bonding wire or a bonding metal sheet. The collector of the second power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet. The DC negative terminal is located on the twelfth base island. The base of the fourth power device is connected to the tenth base island via a bonding wire or a bonding metal sheet. The emitter of the fourth power device is connected to the anode of the fourth diode. The anode of the fourth diode is connected to the eleventh base island via a bonding wire or a bonding metal sheet. The collector of the fourth power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet.

[0038] Preferably, there are N single-phase full-bridge power modules, and the N single-phase full-bridge power modules are encapsulated together in the same encapsulation body, where N is a positive integer greater than or equal to 2.

[0039] The power module of this application places the first power device and the third power device on the first base island, the second power device on the second base island, and the fourth power device on the third base island. The first power device and the third power device are adjacent to each other. The first power device and the second power device form a first half-bridge unit, and the third power device and the fourth power device form a second half-bridge unit. The first half-bridge unit and the second half-bridge unit form a single-phase full-bridge unit. This application reduces the packaging structure of the power module by encapsulating the first power device, the second power device, the third power device and the fourth power device in the power module.

[0040] Meanwhile, the single-phase full-bridge power module of this application includes a first current loop and a second current loop. The current path of the first current loop is as follows: DC positive terminal, first power device, first AC terminal, external circuit connecting the first AC terminal and the second AC terminal, second AC terminal, fourth power device, and DC negative terminal; the current path of the second current loop is as follows: DC positive terminal, third power device, second AC terminal, external circuit connecting the first AC terminal and the second AC terminal, first AC terminal, second power device, and DC negative terminal. This reduces the parasitic parameters between the DC positive terminal and the DC negative terminal of the entire power module, improves the dynamic performance and losses of the circuit, and can integrate a temperature sampling circuit to sample the junction temperature of the first power device, second power device, third power device, and fourth power device in a timely manner, protecting the internal chips and improving the reliability of the power module. Attached Figure Description

[0041] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only involve some embodiments of this disclosure, and are not intended to limit this disclosure.

[0042] Figure 1a This is a circuit topology diagram of the power module in this application, where the power devices are a combination of IGBTs and diodes.

[0043] Figure 1b This is a circuit topology diagram of the power module in this application, where the power device is a MOSFET.

[0044] Figure 2a The diagram shows a front view of the lead frame of the power module of this application, which is a combination of IGBTs and diodes.

[0045] Figure 2b The diagram shows a rear view of the lead frame of the power module of this application, which is a combination of IGBTs and diodes.

[0046] Figure 3a A front view of a power module power device embodiment 1 of this application is shown.

[0047] Figure 3b A side view of a power module power device embodiment 1 of this application is shown.

[0048] Figure 4a A front view of Embodiment 2 of the power module power device of this application is shown.

[0049] Figure 4b A side view of embodiment two of the power module power device of this application is shown. Detailed Implementation

[0050] The present application will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, some well-known parts may not be shown. For simplicity, a semiconductor device obtained after several steps can be depicted in a single figure.

[0051] Many specific details of this application, such as the structure, materials, dimensions, processing techniques, and methods of the devices, are described below to provide a clearer understanding of the application. However, as those skilled in the art will understand, this application may be implemented without adhering to these specific details.

[0052] This application may be presented in various forms, some of which will be described below.

[0053] Figure 1 shows the circuit topology of this application, in which... Figure 1a This is a circuit topology diagram of the power module in this application, where the power devices are a combination of IGBTs and diodes. Figure 1b This is a circuit topology diagram of the power module in this application where the power device is a MOS FET.

[0054] Figure 2a This application provides a partial lead frame diagram of a single-phase full-bridge power module, including a substrate 100, base islands located on the first surface of the substrate, the base islands including a first base island 201, a second base island 202, and a third base island 203; a first power device 301, a second power device 302, a third power device 303, and a fourth power device 304, wherein the power devices are combinations of IGBTs and diodes. The first power device 301 and the second power device 302 constitute a first half-bridge unit, the third power device 303 and the fourth power device 304 constitute a second half-bridge unit, and the first half-bridge unit and the second half-bridge unit constitute a single-phase full-bridge unit. The first power device 301 and the third power device 303 are located on the first base island 201, the second power device 302 is located on the second base island 202, and the fourth power device 304 is located on the third base island 203, with the first power device 301 and the third power device 303 adjacent to each other.

[0055] Furthermore, the first power device 301, the third power device 303, the second power device 302, and the fourth power device 304 are arranged sequentially along the first direction, and the third base island 203 partially surrounds the second base island 202.

[0056] The single-phase full-bridge power module provided in this application further includes power terminals and signal terminals. The power terminals include a DC positive terminal DC+, a DC negative terminal DC-, a first AC terminal AC1, and a second AC terminal AC2, wherein the first AC terminal AC1 is an integral structure with the second base island. The first terminal of the first power device 301 and the first terminal of the third power device 303 are electrically connected to the DC positive terminal DC+, the second terminal of the second power device 302 and the second terminal of the fourth power device 304 are electrically connected to the DC negative terminal DC-, the second terminal of the first power device 301 and the first terminal of the second power device 302 are electrically connected to the first AC terminal AC1, and the second terminal of the third power device 303 and the first terminal of the fourth power device 304 are electrically connected to the second AC terminal AC2. The first end of the first power device 301 and the first end of the third power device 303 are located on the first base island 201 and are electrically connected to the first base island 201 via bonding wires or bonding metal sheets 601; the first end of the second power device 302 is located on the second base island 202 and is electrically connected to the second base island 202 via bonding wires or bonding metal sheets 601; the first end of the fourth power device 304 is located on the third base island 203 and is electrically connected to the third base island 203 via bonding wires or bonding metal sheets 601.

[0057] The single-phase full-bridge power module provided in this application also includes a molding compound. A substrate 100, whose second surface is a heat-dissipating metal 401, a base island, a first power device 301, a second power device 302, a third power device 303, and a fourth power device 304, is molding compound within the molding compound. The molding compound includes opposing first and second sides. A DC positive terminal DC+, a first AC terminal AC1, a DC negative terminal DC-, and a second AC terminal AC2 are led out from the first side of the molding compound and arranged in this order on the first side of the molding compound.

[0058] The signal terminals of a single-phase full-bridge power module provided in this application include a first control terminal G1 and a first Kelvin terminal K1 of a first power device 301, a third control terminal G3 and a third Kelvin terminal K3 of a third power device 303, a second control terminal G2 and a second Kelvin terminal K2 of a second power device 302, and a fourth control terminal G4 and a fourth Kelvin terminal K4 of a fourth power device 304. All of these terminals extend from the second side of the encapsulation and are arranged in sequence. The first control terminal G1 and the first Kelvin terminal K1 on the second side are opposite to the DC positive terminal DC+ on the first side; the third control terminal G3 and the third Kelvin terminal K3 on the second side are opposite to the first AC terminal AC1 on the first side; the second control terminal G2 and the second Kelvin terminal K2 on the second side are opposite to the DC positive terminal DC- on the first side; and the fourth control terminal G4 and the fourth Kelvin terminal K4 on the second side are opposite to the second AC terminal AC2 on the first side.

[0059] The single-phase full-bridge power module provided in this application also includes a fourth base island 204, a fifth base island 205, a sixth base island 206, a seventh base island 207, an eighth base island 208, a ninth base island 209, a tenth base island 210, an eleventh base island 211, and a twelfth base island 212 corresponding to the first control terminal G1, the first Kelvin terminal K1, the third control terminal G3, the third Kelvin terminal K3, the second control terminal G2, the second Kelvin terminal K2, the fourth control terminal G1, and the fourth Kelvin terminal K4, respectively, and the DC negative terminal DC-.

[0060] The base of the first power device 301 in this application is connected to the fourth base island 204 via a bonding wire or a bonding metal sheet 601; the emitter of the first power device 301 is connected to the anode of the first diode, and the anode of the first diode is connected to the fifth base island 205 and the second base island 202 via a bonding wire or a bonding metal sheet 601; the base of the third power device 303 is connected to the sixth base island 206 via a bonding wire or a bonding metal sheet 601; the emitter of the third power device 303 is connected to the anode of the third diode, and the anode of the third diode is connected to the seventh base island 207 via a bonding wire or a bonding metal sheet 601; the base of the second power device 302 is connected to the eighth base island 208 via a bonding wire or a bonding metal sheet 601. The emitter of the second power device 302 is connected to the anode of the second diode. The anode of the second diode is connected to the ninth base island 209 via a bonding wire or a bonding metal sheet 601. The collector of the second power device 302 is connected to the twelfth base island 212 via a bonding wire or a bonding metal sheet 601. The DC negative terminal DC- is located on the twelfth base island 212. The base of the fourth power device 304 is connected to the tenth base island 210 via a bonding wire or a bonding metal sheet 601. The emitter of the fourth power device 304 is connected to the anode of the fourth diode. The anode of the fourth diode is connected to the eleventh base island 211 via a bonding wire or a bonding metal sheet 601. The collector of the fourth power device 304 is connected to the twelfth base island 212 via a bonding wire or a bonding metal sheet.

[0061] The first base island 201, the second base island 202, and the third base island 203 of the single-phase full-bridge power module provided in this application are on the same horizontal plane, and the first power device 301, the second power device 302, the third power device 303, and the fourth power device 304 are on the same horizontal plane.

[0062] Furthermore, the power device can be a metal-oxide-semiconductor field-effect transistor or a high electron mobility transistor. In this embodiment, the gate of the first power device 301 is connected to the fourth base island 204 via a bonding wire or a bonding metal sheet 601; the source 301 of the first power device is connected to the fifth base island 205 and the second base island 202 via a bonding wire or a bonding metal sheet 601; the gate of the third power device 303 is connected to the sixth base island 206 via a bonding wire or a bonding metal sheet 601; the source of the third power device 303 is connected to the seventh base island 207 via a bonding wire or a bonding metal sheet 601; and the gate of the second power device 302 is connected to the eighth base island 208 via a bonding wire or a bonding metal sheet 601. The second power device 302 is connected to the ninth base island 209 via a bonding wire or bonding metal sheet 601, and the drain of the second power device 302 is connected to the twelfth base island 212 via a bonding wire or bonding metal sheet 601. The DC negative terminal DC- is located on the twelfth base island 212. The fourth power device 304 is connected to the tenth base island 210 via a bonding wire or bonding metal sheet 601, the source of the fourth power device 304 is connected to the eleventh base island 211 via a bonding wire or bonding metal sheet 601, and the drain of the fourth power device 304 is connected to the twelfth base island 212 via a bonding wire or bonding metal sheet 601. The remaining packaging and layout in this embodiment are the same as those in the previous embodiment. Figure 2a The above is consistent.

[0063] Figure 3a , 3b These figures represent the power module structure, lead frame diagram, and side view of the lead frame according to Embodiment 1 of this application. The power devices in the power module provided in Embodiment 1 of this application include, but are not limited to, those described above. Figure 2a or Figure 2b Any one of those described in the text, the rest of the structures are the same as Figure 2a or Figure 2b The descriptions are the same. For example... Figure 3b As shown, the molding compound in the power module provided in Embodiment 1 of this application further includes a third side and a fourth side opposite to each other, with the third side perpendicular to the first side. A first positioning hole 501 and a second positioning hole 502 are respectively provided on the third side and the fourth side.

[0064] Furthermore, Embodiment 1 of this application also includes a temperature sampling circuit. The temperature sampling circuit has two temperature sampling terminals, TEMP1 and TEMP2, led out from the plastic package. These terminals are located on the third or fourth side, or parallel to the surface of the plastic package, and are responsible for sampling the internal chip temperature and promptly feeding it back to the external circuit. The power module provided in Embodiment 1 of this application is a surface-mount package.

[0065] Figure 4a , 4bThese figures represent the power module structure, lead frame diagram, and side view of the lead frame according to Embodiment 2 of this application. The power devices in the power module provided in Embodiment 1 of this application include, but are not limited to, those described above. Figure 2a or Figure 2b Any one of those described in the text, the rest of the structures are the same as Figure 2a or Figure 2b The descriptions are the same. For example... Figure 4b As shown, the molding compound in the power module provided in Embodiment 2 of this application further includes a third side and a fourth side opposite to each other, with the third side perpendicular to the first side. A first positioning hole 501 and a second positioning hole 502 are respectively provided on the third side and the fourth side.

[0066] Furthermore, Embodiment 2 of this application also includes a temperature sampling circuit. The temperature sampling circuit has two temperature sampling terminals, TEMP1 and TEMP2, led out from the molding compound. These terminals are located on the third or fourth side, or parallel to the surface of the molding compound, and are responsible for sampling the internal chip temperature and promptly feeding it back to the external circuit. The power module provided in Embodiment 2 of this application is a plug-in package.

[0067] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0068] The embodiments of this application have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of this application. The scope of this application is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this application, and all such substitutions and modifications should fall within the scope of this application.

Claims

1. A single-phase full-bridge power module, characterized in that, include: substrate; The base island is located on the first surface of the substrate, and the base island includes a first base island, a second base island, and a third base island; The first power device, the second power device, the third power device, and the fourth power device constitute a first half-bridge unit, the third power device and the fourth power device constitute a second half-bridge unit, and the first half-bridge unit and the second half-bridge unit constitute a single-phase full-bridge unit. The first power device and the third power device are located on the first base island, the second power device is located on the second base island, the fourth power device is located on the third base island, and the first power device is adjacent to the third power device.

2. The single-phase full-bridge power module according to claim 1, characterized in that, The first power device, the third power device, the second power device, and the fourth power device are arranged sequentially along the first direction.

3. The single-phase full-bridge power module according to claim 1, characterized in that, The third base island partially surrounds the second base island.

4. The single-phase full-bridge power module according to claim 1, characterized in that, The single-phase full-bridge power module includes power terminals and signal terminals. The power terminals include a DC positive terminal, a DC negative terminal, a first AC terminal, and a second AC terminal. The first end of the first power device and the first end of the third power device are electrically connected to the DC positive terminal. The second end of the second power device and the second end of the fourth power device are electrically connected to the DC negative terminal. The second end of the first power device and the first end of the second power device are electrically connected to the first AC terminal. The second end of the third power device and the first end of the fourth power device are electrically connected to the second AC terminal.

5. The single-phase full-bridge power module according to claim 4, characterized in that, The first end of the first power device and the first end of the third power device are located on the first base island and electrically connected to the first base island; the first end of the second power device is located on the second base island and electrically connected to the second base island; the first end of the fourth power device is located on the third base island and electrically connected to the third base island.

6. The single-phase full-bridge power module according to claim 5, characterized in that, The second base island and the first AC terminal are an integral structure.

7. The single-phase full-bridge power module according to claim 4, characterized in that, The single-phase full-bridge power module also includes a molding compound, in which the substrate, base island, first power device, second power device, third power device and fourth power device are molded, and the molding compound includes opposing first side and second side.

8. The single-phase full-bridge power module according to claim 7, characterized in that, The DC positive terminal, DC negative terminal, first AC terminal, and second AC terminal are led out from the first side of the encapsulation.

9. The single-phase full-bridge power module according to claim 4, characterized in that, The first AC terminal or the second AC terminal is located between the DC negative terminal and the DC positive terminal.

10. The single-phase full-bridge power module according to claim 8, characterized in that, The DC positive terminal, the first AC terminal, the DC negative terminal, and the second AC terminal are arranged sequentially on the first side of the encapsulation.

11. The single-phase full-bridge power module according to claim 7, characterized in that, The signal terminals include a first control terminal and a first Kelvin terminal of a first power device, a second control terminal and a second Kelvin terminal of a second power device, a third control terminal and a third Kelvin terminal of a third power device, and a fourth control terminal and a fourth Kelvin terminal of a fourth power device. The first control terminal, the first Kelvin terminal, the second control terminal, the second Kelvin terminal, the third control terminal, the third Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal extend from the second side of the encapsulation.

12. The single-phase full-bridge power module according to claim 11, characterized in that, The first control terminal and the first Kelvin terminal on the second side are respectively provided with the DC positive terminal on the first side; The third control terminal and the third Kelvin terminal on the second side are respectively provided with the first AC terminal on the first side; The second control terminal and the second Kelvin terminal on the second side are respectively provided with the DC negative terminal on the first side; The fourth control terminal and the fourth Kelvin terminal on the second side are respectively provided with the second AC terminal on the first side.

13. The single-phase full-bridge power module according to claim 11, characterized in that, The first control terminal, the first Kelvin terminal, the third control terminal, the third Kelvin terminal, the second control terminal, the second Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal are arranged in sequence.

14. The single-phase full-bridge power module according to claim 11, characterized in that, The first control terminal, the first Kelvin terminal, the third control terminal, the third Kelvin terminal, the second control terminal, the second Kelvin terminal, the fourth control terminal, and the fourth Kelvin terminal correspond to the fourth base island, the fifth base island, the sixth base island, the seventh base island, the eighth base island, the ninth base island, the tenth base island, the eleventh base island, and the twelfth base island corresponding to the DC negative terminal.

15. The single-phase full-bridge power module according to claim 1, characterized in that, The first base island, the second base island, and the third base island are on the same horizontal plane.

16. The single-phase full-bridge power module according to claim 1, characterized in that, The first power device, the second power device, the third power device, and the fourth power device are on the same horizontal plane.

17. The single-phase full-bridge power module according to claim 7, characterized in that, The single-phase full-bridge power module also includes a temperature sampling circuit, with a temperature sampling terminal led out from the plastic encapsulation.

18. The single-phase full-bridge power module according to claim 17, characterized in that, The temperature sampling terminal and the signal terminal are on the same side of the encapsulation.

19. The single-phase full-bridge power module according to claim 1, characterized in that, The single-phase full-bridge power module is a surface-mount package or a plug-in package.

20. The single-phase full-bridge power module according to claim 1, characterized in that, The second surface of the substrate is a heat-dissipating metal.

21. The single-phase full-bridge power module according to claim 7, characterized in that, The molding compound also includes a third side and a fourth side opposite to each other, the third side being perpendicular to the first side, and the third side and the fourth side having a first positioning hole and a second positioning hole, respectively.

22. The single-phase full-bridge power module according to claim 17, characterized in that, The temperature sampling terminal is located on the third or fourth side or parallel to the surface of the encapsulated body.

23. The single-phase full-bridge power module according to claim 14, characterized in that, The first power device, the second power device, the third power device, and the fourth power device are metal-oxide-semiconductor field-effect transistors, reverse-conducting insulated-gate bipolar transistors, and high electron mobility transistors.

24. The single-phase full-bridge power module according to claim 23, characterized in that, The gate of the first power device is connected to the fourth base island via a bonding wire or a bonding metal sheet; the source of the first power device is connected to the fifth base island and the second base island via a bonding wire or a bonding metal sheet; the gate of the third power device is connected to the sixth base island via a bonding wire or a bonding metal sheet; the source of the third power device is connected to the seventh base island via a bonding wire or a bonding metal sheet; the gate of the second power device is connected to the eighth base island via a bonding wire or a bonding metal sheet, the source of the second power device is connected to the ninth base island via a bonding wire or a bonding metal sheet, and the drain of the second power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet, with the DC negative terminal located on the twelfth base island; the gate of the fourth power device is connected to the tenth base island via a bonding wire or a bonding metal sheet, the source of the fourth power device is connected to the eleventh base island via a bonding wire or a bonding metal sheet, and the drain of the fourth power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet.

25. The single-phase full-bridge power module according to claim 14, characterized in that, The first power device, the second power device, the third power device, and the fourth power device are combinations of insulated-gate bipolar transistors and diodes.

26. The single-phase full-bridge power module according to claim 25, characterized in that, The base of the first power device is connected to the fourth base island via a bonding wire or a bonding metal sheet; the emitter of the first power device is connected to the anode of the first diode, and the anode of the first diode is connected to the fifth base island and the second base island via a bonding wire or a bonding metal sheet; the base of the third power device is connected to the sixth base island via a bonding wire or a bonding metal sheet; the emitter of the third power device is connected to the anode of the third diode, and the anode of the third diode is connected to the seventh base island via a bonding wire or a bonding metal sheet; the base of the second power device is connected to the eighth base island via a bonding wire or a bonding metal sheet. The emitter of the first power device is connected to the anode of the second diode, the anode of the second diode is connected to the ninth base island via a bonding wire or a bonding metal sheet, the collector of the second power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet, and the DC negative terminal is located on the twelfth base island; the base of the fourth power device is connected to the tenth base island via a bonding wire or a bonding metal sheet, the emitter of the fourth power device is connected to the anode of the fourth diode, the anode of the fourth diode is connected to the eleventh base island via a bonding wire or a bonding metal sheet, and the collector of the fourth power device is connected to the twelfth base island via a bonding wire or a bonding metal sheet.

27. The single-phase full-bridge power module according to any one of claims 1 to 26, characterized in that, The single-phase full-bridge power module comprises N units, which are encapsulated together in the same encapsulation body, where N is a positive integer greater than or equal to 2.

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