Half-bridge power module and electronic device

Abstract

The application provides a half-bridge power module and electronic equipment, and relates to the technical field of semiconductors.The module comprises an upper bridge transistor group, a lower bridge transistor group, an upper bridge DBC plate and a lower bridge DBC plate arranged in a horizontal direction and connected by a bonding wire.The upper bridge transistor group and the lower bridge transistor group are arranged on the upper bridge DBC plate and the lower bridge DBC plate respectively.The vertical side of the upper bridge DBC plate close to the lower bridge DBC plate is used for leading out the power control terminals of the upper bridge transistor group.The vertical side of the lower bridge DBC plate close to the upper bridge DBC plate is used for leading out the power control terminals of the lower bridge transistor group.The vertical side of the upper bridge DBC plate away from the lower bridge DBC plate is used for leading out the signal monitoring terminals of the upper bridge transistor group and the signal monitoring terminals of the lower bridge transistor group.The application improves the current density of the half-bridge power module and reduces the volume and cost of the module.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a half-bridge power module and electronic device. Background Technology

[0002] With the rapid development of power electronics technology, half-bridge power modules have been widely used in new energy vehicles, industrial automation, photovoltaic energy storage and other fields, and are gradually moving towards a development direction of high reliability and high power density.

[0003] However, the DBC (Direct Bonded Copper) design used in existing half-bridge power modules generally suffers from low space utilization and irregular chip layout, which limits module performance. This is especially true for modules with higher current ratings, where the issues of larger size and higher cost are more pronounced, restricting further improvements beyond the current level.

[0004] Therefore, how to improve the current density of half-bridge power modules and reduce module size and cost is a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0005] The purpose of this application is to provide a half-bridge power module and electronic device to improve the current density of the half-bridge power module and reduce the module size and cost.

[0006] To achieve the above objectives, the technical solution adopted in this application is as follows: On one hand, this application provides a half-bridge power module, including: an upper bridge transistor group, a lower bridge transistor group, an upper bridge DBC board and a lower bridge DBC board arranged in a horizontal direction and connected by bonding wires; The upper bridge transistor group and the lower bridge transistor group are respectively disposed on the upper bridge DBC board and the lower bridge DBC board; The vertical side of the upper bridge DBC board near the lower bridge DBC board is used to bring out the power control terminals of the upper bridge transistor group; The vertical side of the lower bridge DBC board near the upper bridge DBC board is used to bring out the power control terminals of the lower bridge transistor group; The vertical side of the upper bridge DBC board away from the lower bridge DBC board is used to bring out the signal monitoring terminals of the upper bridge transistor group and the lower bridge transistor group.

[0007] Furthermore, the lower bridge DBC board includes: a lower bridge ceramic substrate, and a lower bridge emitter control copper foil, a lower bridge collector control copper foil, and a first lower bridge auxiliary connection copper foil located on the front side of the lower bridge ceramic substrate; The lower bridge ceramic substrate includes: a first vertical side and a second vertical side parallel in the vertical direction, and a first horizontal side and a second horizontal side parallel in the horizontal direction; wherein, the first vertical side is the vertical side of the lower bridge ceramic substrate away from the upper bridge DBC board, and the second vertical side is the vertical side of the lower bridge ceramic substrate close to the upper bridge DBC board; The lower bridge emitter control copper foil is located on the second vertical side of the lower bridge ceramic substrate; The lower bridge collector control copper foil is located at the center of the lower bridge ceramic substrate and extends to the first horizontal side and the second vertical side of the lower bridge ceramic substrate. The first lower bridge auxiliary connection copper foil is located on the second horizontal side and the first vertical side of the lower bridge ceramic substrate.

[0008] Furthermore, the upper bridge DBC board includes: an upper bridge ceramic substrate, and upper bridge collector control copper foil, first upper bridge auxiliary connection copper foil, second upper bridge auxiliary connection copper foil, third upper bridge auxiliary connection copper foil, second lower bridge auxiliary connection copper foil, third lower bridge auxiliary connection copper foil, upper bridge gate monitoring copper foil, upper bridge emitter monitoring copper foil, lower bridge emitter monitoring copper foil, and lower bridge gate monitoring copper foil located on the front side of the upper bridge ceramic substrate; The upper bridge ceramic substrate includes: a third vertical side and a fourth vertical side parallel in the vertical direction, and a third horizontal side and a fourth horizontal side parallel in the horizontal direction; wherein, the third vertical side is the vertical side of the upper bridge ceramic substrate close to the lower bridge DBC board, the fourth vertical side is the vertical side of the upper bridge ceramic substrate away from the lower bridge DBC board, the third horizontal side and the first horizontal side are located on a first horizontal line, and the fourth horizontal side and the second horizontal side are located on a second horizontal line; The upper bridge gate monitoring copper foil, the upper bridge emitter monitoring copper foil, the lower bridge emitter monitoring copper foil, and the lower bridge gate monitoring copper foil are arranged sequentially along the vertical direction on the fourth vertical side of the upper bridge ceramic substrate; The second lower bridge auxiliary connection copper foil is located on the fourth horizontal side of the upper bridge ceramic substrate, and one end of the second lower bridge auxiliary connection copper foil is close to the lower bridge gate monitoring copper foil, while the other end of the second lower bridge auxiliary connection copper foil is close to the first lower bridge auxiliary connection copper foil. The third lower bridge auxiliary connection copper foil is located at the center of the upper bridge ceramic substrate and extends horizontally; one end of the third lower bridge auxiliary connection copper foil is close to the lower bridge emitter monitoring copper foil, and the other end of the third lower bridge auxiliary connection copper foil extends to the third vertical side of the upper bridge ceramic substrate. The third upper bridge auxiliary connection copper foil is close to the upper bridge gate monitoring copper foil; the first upper bridge auxiliary connection copper foil is located on the third vertical side of the upper bridge ceramic substrate; The second upper bridge auxiliary connection copper foil is located at the center of the upper bridge ceramic substrate and is parallel to the third lower bridge auxiliary connection copper foil; one end of the second upper bridge auxiliary connection copper foil is close to the upper bridge emitter monitoring copper foil, and the other end of the second upper bridge auxiliary connection copper foil is close to the first upper bridge auxiliary connection copper foil. The upper bridge collector control copper foil is located in the center portion of the upper bridge ceramic substrate and is close to the first upper bridge auxiliary connection copper foil, the second upper bridge auxiliary connection copper foil and the third upper bridge auxiliary connection copper foil.

[0009] Furthermore, the upper bridge transistor group includes an upper bridge IGBT group and an upper bridge FRD group; the lower bridge transistor group includes a lower bridge IGBT group and a lower bridge FRD group. The collector of the upper bridge IGBT group and the cathode of the upper bridge FRD group are both welded to the upper bridge collector control copper foil; The gate of the upper bridge IGBT group is connected to the third upper bridge auxiliary connection copper foil via a bonding wire, and the third upper bridge auxiliary connection copper foil is connected to the upper bridge gate monitoring copper foil via a bonding wire. The emitter of the upper IGBT group and the anode of the upper FRD group are connected to the first upper bridge auxiliary connection copper foil via bonding wires. The first upper bridge auxiliary connection copper foil is connected to the lower bridge collector control copper foil via bonding wires. The first upper bridge auxiliary connection copper foil is also connected to the second upper bridge auxiliary connection copper foil via bonding wires. The second upper bridge auxiliary connection copper foil is connected to the upper bridge emitter monitoring copper foil via bonding wires. The collector of the lower bridge IGBT group and the cathode of the lower bridge FRD group are both welded to the lower bridge collector control copper foil; The gate of the lower bridge IGBT group is connected to the first lower bridge auxiliary connection copper foil via a bonding wire, the first lower bridge auxiliary connection copper foil is connected to the second lower bridge auxiliary connection copper foil via a bonding wire, and the second lower bridge auxiliary connection copper foil is connected to the lower bridge gate monitoring copper foil via a bonding wire. The emitter of the lower bridge IGBT group and the anode of the lower bridge FRD group are connected to the lower bridge emitter control copper foil via bonding wires. The lower bridge emitter control copper foil is connected to the third lower bridge auxiliary connection copper foil via bonding wires. The third lower bridge auxiliary connection copper foil is connected to the lower bridge emitter monitoring copper foil via bonding wires.

[0010] Furthermore, the upper bridge IGBT group and the upper bridge FRD group are arranged horizontally, with the upper bridge IGBT group close to the fourth vertical side of the upper bridge ceramic substrate and the upper bridge FRD group close to the third vertical side of the upper bridge ceramic substrate. The upper bridge IGBT group consists of multiple vertically arranged upper bridge IGBT chips, and the upper bridge FRD group consists of multiple vertically arranged upper bridge FRD chips.

[0011] Furthermore, the lower bridge IGBT group and the lower bridge FRD group are arranged horizontally, with the lower bridge IGBT group close to the first vertical side of the lower bridge ceramic substrate and the lower bridge FRD group close to the second vertical side of the lower bridge ceramic substrate. The lower-bridge IGBT group consists of multiple vertically arranged lower-bridge IGBT chips, and the lower-bridge FRD group consists of multiple vertically arranged lower-bridge FRD chips.

[0012] Furthermore, the power control terminals of the upper bridge transistor group include: an upper bridge collector control terminal; the upper bridge collector control terminal is soldered onto the upper bridge collector control copper foil; The power control terminals of the lower bridge transistor group include: a lower bridge collector control terminal and a lower bridge emitter control terminal; the lower bridge collector control terminal and the lower bridge emitter control terminal are respectively soldered onto the lower bridge collector control copper foil and the lower bridge emitter control copper foil; The signal monitoring terminals of the upper bridge transistor group include: an upper bridge gate monitoring terminal and an upper bridge emitter monitoring terminal; the upper bridge gate monitoring terminal and the upper bridge emitter monitoring terminal are respectively soldered onto the upper bridge gate monitoring copper foil and the upper bridge emitter monitoring copper foil; The signal monitoring terminals of the lower bridge transistor group include: a lower bridge emitter monitoring terminal and a lower bridge gate monitoring terminal; the lower bridge emitter monitoring terminal and the lower bridge gate monitoring terminal are respectively soldered onto the lower bridge emitter monitoring copper foil and the lower bridge gate monitoring copper foil.

[0013] Furthermore, the upper bridge DBC board also includes an upper bridge heat dissipation copper foil, which is located on the back side of the upper bridge ceramic substrate; The lower bridge DBC board also includes a lower bridge heat dissipation copper foil, which is located on the back side of the lower bridge ceramic substrate.

[0014] Furthermore, the half-bridge power module also includes a thermistor, and the upper bridge DBC board also includes a first temperature monitoring copper foil and a second temperature monitoring copper foil; The upper bridge gate monitoring copper foil, the upper bridge emitter monitoring copper foil, the first temperature monitoring copper foil, the second temperature monitoring copper foil, the lower bridge emitter monitoring copper foil, and the lower bridge gate monitoring copper foil are arranged in sequence along the vertical direction on the fourth vertical side of the upper bridge ceramic substrate; The two ends of the thermistor are respectively soldered to the first temperature monitoring copper foil and the second temperature monitoring copper foil. The first temperature monitoring copper foil is used to lead out the first temperature monitoring terminal, and the second temperature monitoring copper foil is used to lead out the second temperature monitoring terminal.

[0015] On the other hand, this application also provides an electronic device, which includes a half-bridge power module as described in any of the foregoing embodiments.

[0016] Compared with the prior art, this application has the following advantages: The half-bridge power module provided in this application includes: an upper-bridge transistor group, a lower-bridge transistor group, and an upper-bridge DBC board and a lower-bridge DBC board arranged horizontally and connected by bonding wires. The upper-bridge transistor group and the lower-bridge transistor group are respectively disposed on the upper-bridge DBC board and the lower-bridge DBC board. The vertical side of the upper-bridge DBC board near the lower-bridge DBC board is used to lead out the power control terminals of the upper-bridge transistor group. The vertical side of the lower-bridge DBC board near the upper-bridge DBC board is used to lead out the power control terminals of the lower-bridge transistor group. The vertical side of the upper-bridge DBC board away from the lower-bridge DBC board is used to lead out the signal monitoring terminals of both the upper-bridge transistor group and the lower-bridge transistor group. By integrating the upper and lower bridge arms of the half-bridge power circuit onto two horizontally arranged DBC boards, and optimizing the transistor group layout and terminal lead-out sides, a compact and regularized chip distribution is achieved, significantly improving the space utilization of the DBC board. This allows for the configuration of more chips within the same volume, thereby effectively improving the current carrying capacity and power density of the half-bridge power module. This highly integrated design approach increases the current density of the half-bridge power module while also reducing the module package size and manufacturing costs. Attached Figure Description

[0017] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0018] Figure 1 This is one of the structural schematic diagrams of a half-bridge power module shown in the embodiments of this application; Figure 2This is one of the circuit diagrams of a half-bridge power module shown in the embodiments of this application; Figure 3 This is one of the structural schematic diagrams of an upper bridge DBC board and a lower bridge DBC board shown in an embodiment of this application; Figure 4 This is a second schematic diagram of the structure of an upper bridge DBC board and a lower bridge DBC board as shown in an embodiment of this application; Figure 5 This is a second schematic diagram of the structure of a half-bridge power module as shown in an embodiment of this application; Figure 6 This is a second circuit diagram of a half-bridge power module shown in an embodiment of this application.

[0019] Icons: 10 - Half-bridge power module; 100 - Upper-bridge transistor group; 110 - Upper-bridge IGBT group; 120 - Upper-bridge FRD group; 200 - Lower-bridge transistor group; 210 - Lower-bridge IGBT group; 220 - Lower-bridge FRD group; 300 - Upper-bridge DBC board; 310 - Upper-bridge ceramic substrate; 320 - Upper-bridge collector control copper foil; 331 - First upper-bridge auxiliary connection copper foil; 332 - Second upper-bridge auxiliary connection copper foil; 333 - Third upper-bridge auxiliary connection copper foil; 334 - Second lower-bridge auxiliary connection copper foil; 335 - Third lower-bridge auxiliary connection copper foil; 341 - Upper-bridge gate monitoring copper foil; 342 - Upper-bridge emitter monitoring copper foil; 343 - First temperature monitoring copper foil; 344 - Second temperature monitoring copper foil; 345 - Lower-bridge emitter monitoring copper foil; 346 - Lower bridge Gate monitoring copper foil; 400-Lower bridge DBC board; 410-Lower bridge ceramic substrate; 420-Lower bridge emitter control copper foil; 430-Lower bridge collector control copper foil; 440-First lower bridge auxiliary connection copper foil; 500-Thermistor; 21-Upper bridge collector control terminal; 22-Lower bridge collector control terminal; 23-Lower bridge emitter control terminal; 31-Upper bridge gate monitoring terminal; 32-Upper bridge emitter monitoring terminal; 33-First temperature monitoring terminal; 34-Second temperature monitoring terminal; 35-Lower bridge emitter monitoring terminal; 36-Lower bridge gate monitoring terminal; Y1-First vertical side; Y2-Second vertical side; Y3-Third vertical side; Y4-Fourth vertical side; X1-First horizontal side; X2-Second horizontal side; X3-Third horizontal side; X4-Fourth horizontal side. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] In the description of this application, it should be noted that relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The term "connection" should be interpreted broadly, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0022] As described in the background section, existing half-bridge power modules generally suffer from low space utilization and irregular chip layout, which limits module performance. This is particularly pronounced in modules with higher current ratings, where the larger size and higher cost further restrict improvements beyond current levels. Therefore, improving the current density of half-bridge power modules while reducing their size and cost is a critical technical problem that needs to be solved by those skilled in the art.

[0023] To resolve the above technical issues, please refer to Figure 1 and Figure 2 This application provides a half-bridge power module 10, including: an upper bridge transistor group 100, a lower bridge transistor group 200, an upper bridge DBC board 300 and a lower bridge DBC board 400 arranged in a horizontal direction and connected by bonding wires.

[0024] The upper bridge transistor group 100 is disposed on the upper bridge DBC board 300, and the lower bridge transistor group 200 is disposed on the lower bridge DBC board 400.

[0025] The vertical side of the upper bridge DBC board 300 near the lower bridge DBC board 400 is used to bring out the power control terminals of the upper bridge transistor group 100.

[0026] The vertical side of the lower bridge DBC board 400 near the upper bridge DBC board 300 is used to bring out the power control terminals of the lower bridge transistor group 200.

[0027] The vertical side of the upper bridge DBC board 300 away from the lower bridge DBC board 400 is used to bring out the signal monitoring terminals of the upper bridge transistor group 100 and the lower bridge transistor group 200.

[0028] Based on the above design, this application integrates the upper and lower arms of the half-bridge power circuit onto two horizontally arranged DBC boards, and optimizes the transistor layout and terminal lead-out sides, achieving a compact and orderly chip distribution. This significantly improves the space utilization of the DBC boards, allowing more chips to be configured within the same volume, thereby effectively enhancing the current carrying capacity and power density of the half-bridge power module 10. This highly integrated design not only increases the current density of the half-bridge power module 10 but also reduces the module package size and manufacturing cost.

[0029] To better understand the DBC board design in this application, please refer to [link / reference]. Figure 3 and Figure 4 In one optional embodiment, the lower bridge DBC board 400 includes: a lower bridge ceramic substrate 410, and a lower bridge emitter control copper foil 420, a lower bridge collector control copper foil 430, and a first lower bridge auxiliary connection copper foil 440 located on the front side of the lower bridge ceramic substrate 410.

[0030] The lower bridge ceramic substrate 410 includes: a first vertical side Y1 and a second vertical side Y2 parallel in the vertical direction, and a first horizontal side X1 and a second horizontal side X2 parallel in the horizontal direction. The first vertical side Y1 is the vertical side of the lower bridge ceramic substrate 410 away from the upper bridge DBC board 300, and the second vertical side Y2 is the vertical side of the lower bridge ceramic substrate 410 close to the upper bridge DBC board 300.

[0031] The lower bridge emitter control copper foil 420 is located on the second vertical side Y2 of the lower bridge ceramic substrate 410.

[0032] The lower bridge collector control copper foil 430 is located at the center of the lower bridge ceramic substrate 410 and extends to the first horizontal side X1 and the second vertical side Y2 of the lower bridge ceramic substrate 410.

[0033] The first lower bridge auxiliary connection copper foil 440 is located on the second horizontal side X2 and the first vertical side Y1 of the lower bridge ceramic substrate 410.

[0034] Optionally, the lower bridge DBC board 400 also includes a lower bridge heat dissipation copper foil (not shown in the figure). The lower bridge heat dissipation copper foil is located on the back side of the lower bridge ceramic substrate 410.

[0035] Understandably, the lower bridge DBC board 400 in this application has a three-layer structure, consisting of a front layer, a middle layer, and a back layer. The middle layer of the lower bridge DBC board 400 is a lower bridge ceramic substrate 410, with patterned copper foil on its front side for electrical connection to the lower bridge transistor group 200; its back side uses a full copper layer as the lower bridge heat dissipation copper foil to achieve uniform heat dissipation.

[0036] In another optional embodiment, the upper bridge DBC board 300 includes: an upper bridge ceramic substrate 310, and upper bridge collector control copper foil 320, first upper bridge auxiliary connection copper foil 331, second upper bridge auxiliary connection copper foil 332, third upper bridge auxiliary connection copper foil 333, second lower bridge auxiliary connection copper foil 334, third lower bridge auxiliary connection copper foil 335, upper bridge gate monitoring copper foil 341, upper bridge emitter monitoring copper foil 342, lower bridge emitter monitoring copper foil 345, and lower bridge gate monitoring copper foil 346 located on the front side of the upper bridge ceramic substrate 310.

[0037] The upper bridge ceramic substrate 310 includes: a third vertical side Y3 and a fourth vertical side Y4 parallel in the vertical direction, and a third horizontal side X3 and a fourth horizontal side X4 parallel in the horizontal direction. The third vertical side Y3 is the vertical side of the upper bridge ceramic substrate 310 closest to the lower bridge DBC board 400, and the fourth vertical side Y4 is the vertical side of the upper bridge ceramic substrate 310 furthest from the lower bridge DBC board 400. The third horizontal side X3 and the first horizontal side X1 are located on a first horizontal line, and the fourth horizontal side X4 and the second horizontal side X2 are located on a second horizontal line.

[0038] The upper bridge gate monitoring copper foil 341, the upper bridge emitter monitoring copper foil 342, the lower bridge emitter monitoring copper foil 345, and the lower bridge gate monitoring copper foil 346 are arranged in sequence along the vertical direction on the fourth vertical side Y4 of the upper bridge ceramic substrate 310.

[0039] The second lower bridge auxiliary connection copper foil 334 is located on the fourth horizontal side X4 of the upper bridge ceramic substrate 310, and one end of the second lower bridge auxiliary connection copper foil 334 is close to the lower bridge gate monitoring copper foil 346, while the other end of the second lower bridge auxiliary connection copper foil 334 is close to the first lower bridge auxiliary connection copper foil 440.

[0040] The third lower bridge auxiliary connection copper foil 335 is located at the center of the upper bridge ceramic substrate 310 and extends horizontally. One end of the third lower bridge auxiliary connection copper foil 335 is close to the lower bridge emitter monitoring copper foil 345, and the other end of the third lower bridge auxiliary connection copper foil 335 extends to the third vertical side Y3 of the upper bridge ceramic substrate 310.

[0041] The third upper bridge auxiliary connection copper foil 333 is close to the upper bridge gate monitoring copper foil 341, and the first upper bridge auxiliary connection copper foil 331 is located on the third vertical side Y3 of the upper bridge ceramic substrate 310.

[0042] The second upper bridge auxiliary connection copper foil 332 is located at the center of the upper bridge ceramic substrate 310 and is parallel to the third lower bridge auxiliary connection copper foil 335. At the same time, one end of the second upper bridge auxiliary connection copper foil 332 is close to the upper bridge emitter monitoring copper foil 342, and the other end of the second upper bridge auxiliary connection copper foil 332 is close to the first upper bridge auxiliary connection copper foil 331.

[0043] The upper bridge collector control copper foil 320 is located in the center of the upper bridge ceramic substrate 310 and is close to the first upper bridge auxiliary connection copper foil 331, the second upper bridge auxiliary connection copper foil 332 and the third upper bridge auxiliary connection copper foil 333.

[0044] Optionally, the upper bridge DBC board 300 also includes an upper bridge heat dissipation copper foil (not shown in the figure). The upper bridge heat dissipation copper foil is located on the back side of the upper bridge ceramic substrate 310.

[0045] Understandably, the upper bridge DBC board 300 in this application also has a three-layer structure, consisting of a front layer, a middle layer, and a back layer. The middle layer of the upper bridge DBC board 300 is an upper bridge ceramic substrate 310, with patterned copper foil on its front side for electrical connection to the upper bridge transistor group 100; its back side uses a full copper layer as the upper bridge heat dissipation copper foil to achieve uniform heat dissipation.

[0046] Based on this, the following combination Figure 4 , Figure 5 and Figure 6 The layout of the upper bridge transistor group 100 and the lower bridge transistor group 200 in this application will be described in detail.

[0047] In one alternative implementation, the upper bridge transistor group 100 includes an upper bridge IGBT group 110 and an upper bridge FRD group 120, and the lower bridge transistor group 200 includes a lower bridge IGBT group 210 and a lower bridge FRD group 220.

[0048] In this case, the collector of the upper bridge IGBT group 110 and the cathode of the upper bridge FRD group 120 are both welded to the upper bridge collector control copper foil 320.

[0049] The gate of the upper bridge IGBT group 110 is connected to the third upper bridge auxiliary connection copper foil 333 through a bonding wire, and the third upper bridge auxiliary connection copper foil 333 is connected to the upper bridge gate monitoring copper foil 341 through a bonding wire.

[0050] The emitter of the upper bridge IGBT group 110 and the anode of the upper bridge FRD group 120 are connected to the first upper bridge auxiliary connection copper foil 331 through bonding wires. The first upper bridge auxiliary connection copper foil 331 is connected to the lower bridge collector control copper foil 430 through bonding wires. The first upper bridge auxiliary connection copper foil 331 is also connected to the second upper bridge auxiliary connection copper foil 332 through bonding wires. The second upper bridge auxiliary connection copper foil 332 is connected to the upper bridge emitter monitoring copper foil 342 through bonding wires.

[0051] The collector of the lower bridge IGBT group 210 and the cathode of the lower bridge FRD group 220 are both soldered onto the lower bridge collector control copper foil 430.

[0052] The gate of the lower bridge IGBT group 210 is connected to the first lower bridge auxiliary connection copper foil 440 via a bonding wire. The first lower bridge auxiliary connection copper foil 440 is connected to the second lower bridge auxiliary connection copper foil 334 via a bonding wire. The second lower bridge auxiliary connection copper foil 334 is connected to the lower bridge gate monitoring copper foil 346 via a bonding wire.

[0053] The emitter of the lower bridge IGBT group 210 and the anode of the lower bridge FRD group 220 are connected to the lower bridge emitter control copper foil 420 through bonding wires. The lower bridge emitter control copper foil 420 is connected to the third lower bridge auxiliary connection copper foil 335 through bonding wires. The third lower bridge auxiliary connection copper foil 335 is connected to the lower bridge emitter monitoring copper foil 345 through bonding wires.

[0054] As an optional implementation, the upper-bridge IGBT group 110 and the upper-bridge FRD group 120 are arranged horizontally, with the upper-bridge IGBT group 110 located near the fourth vertical side Y4 of the upper-bridge ceramic substrate 310, and the upper-bridge FRD group 120 located near the third vertical side Y3 of the upper-bridge ceramic substrate 310. The upper-bridge IGBT group 110 is composed of multiple vertically arranged upper-bridge IGBT chips, and the upper-bridge FRD group 120 is composed of multiple vertically arranged upper-bridge FRD chips. Furthermore, the emitters of the multiple upper-bridge IGBT chips are interconnected via bonding wires to ensure current sharing consistency among the multiple upper-bridge IGBT chips. For example, as... Figure 5 As shown, the upper bridge IGBT group 110 consists of four vertically arranged upper bridge IGBT chips, and the upper bridge FRD group 120 consists of four vertically arranged upper bridge FRD chips.

[0055] As another optional implementation, the lower-bridge IGBT group 210 and the lower-bridge FRD group 220 are arranged horizontally, with the lower-bridge IGBT group 210 close to the first vertical side Y1 of the lower-bridge ceramic substrate 410, and the lower-bridge FRD group 220 close to the second vertical side Y2 of the lower-bridge ceramic substrate 410. The lower-bridge IGBT group 210 is composed of multiple vertically arranged lower-bridge IGBT chips, and the lower-bridge FRD group 220 is composed of multiple vertically arranged lower-bridge FRD chips. Furthermore, the emitters of the multiple lower-bridge IGBT chips are interconnected via bonding wires to ensure current sharing consistency among the multiple lower-bridge IGBT chips. For example, as... Figure 5 As shown, the lower-bridge IGBT group 210 consists of four vertically arranged lower-bridge IGBT chips, and the lower-bridge FRD group 220 consists of four vertically arranged lower-bridge FRD chips.

[0056] Furthermore, in an optional embodiment, the power control terminals of the upper bridge transistor group 100 include an upper bridge collector control terminal 21. The upper bridge collector control terminal 21 is soldered onto the upper bridge collector control copper foil 320 and is used to connect to the positive terminal of an external DC power supply, serving as the power input path for the upper bridge arm.

[0057] The power control terminals of the lower-bridge transistor group 200 include a lower-bridge collector control terminal 22 and a lower-bridge emitter control terminal 23. The lower-bridge collector control terminal 22 is soldered onto the lower-bridge collector control copper foil 430 and is used to connect to the half-bridge output node, delivering the modulated power to the load. The lower-bridge emitter control terminal 23 is soldered onto the lower-bridge emitter control copper foil 420 and is used to connect to the negative terminal of the DC power supply, forming a complete power circuit.

[0058] The signal monitoring terminals of the upper bridge transistor group 100 include an upper bridge gate monitoring terminal 31 and an upper bridge emitter monitoring terminal 32. The upper bridge gate monitoring terminal 31 is soldered to the upper bridge gate monitoring copper foil 341, and the upper bridge emitter monitoring terminal 32 is soldered to the upper bridge emitter monitoring copper foil 342.

[0059] The signal monitoring terminals of the lower bridge transistor group 200 include a lower bridge emitter monitoring terminal 35 and a lower bridge gate monitoring terminal 36. The lower bridge emitter monitoring terminal 35 is soldered to the lower bridge emitter monitoring copper foil 345, and the lower bridge gate monitoring terminal 36 is soldered to the lower bridge gate monitoring copper foil 346.

[0060] In addition, to achieve real-time monitoring and protection of the operating temperature of the half-bridge power module 10, please refer to [link / reference needed]. Figures 4 to 6 In one alternative implementation, the half-bridge power module 10 further includes a thermistor 500, and the upper bridge DBC board 300 further includes a first temperature monitoring copper foil 343 and a second temperature monitoring copper foil 344.

[0061] Among them, the upper bridge gate monitoring copper foil 341, the upper bridge emitter monitoring copper foil 342, the first temperature monitoring copper foil 343, the second temperature monitoring copper foil 344, the lower bridge emitter monitoring copper foil 345, and the lower bridge gate monitoring copper foil 346 are arranged in sequence along the vertical direction on the fourth vertical side Y4 of the upper bridge ceramic substrate 310.

[0062] The two ends of the thermistor 500 are respectively soldered to the first temperature monitoring copper foil 343 and the second temperature monitoring copper foil 344. The first temperature monitoring copper foil 343 is used to lead out the first temperature monitoring terminal 33, and the second temperature monitoring copper foil 344 is used to lead out the second temperature monitoring terminal 34.

[0063] Optionally, the thermistor 500 in this application is an NTC (Negative Temperature Coefficient) thermistor whose resistance decreases as the temperature increases.

[0064] Furthermore, embodiments of this application also provide an electronic device, which includes a half-bridge power module 10 as described in any of the foregoing embodiments.

[0065] In summary, this application provides a half-bridge power module and electronic device. The half-bridge power module includes: an upper-bridge transistor group, a lower-bridge transistor group, and an upper-bridge DBC board and a lower-bridge DBC board arranged horizontally and connected by bonding wires. The upper-bridge transistor group and the lower-bridge transistor group are respectively disposed on the upper-bridge DBC board and the lower-bridge DBC board. The vertical side of the upper-bridge DBC board near the lower-bridge DBC board is used to lead out power control terminals of the upper-bridge transistor group. The vertical side of the lower-bridge DBC board near the upper-bridge DBC board is used to lead out power control terminals of the lower-bridge transistor group. The vertical side of the upper-bridge DBC board away from the lower-bridge DBC board is used to lead out signal monitoring terminals of both the upper-bridge transistor group and the lower-bridge transistor group. This application integrates the upper and lower arms of the half-bridge power circuit onto two horizontally arranged DBC boards, and optimizes the transistor layout and terminal lead-out sides, achieving a compact and orderly chip distribution. This significantly improves the space utilization of the DBC boards, allowing more chips to be configured within the same volume, thereby effectively enhancing the current carrying capacity and power density of the half-bridge power module. This highly integrated design not only increases the current density of the half-bridge power module but also reduces the module package size and manufacturing cost.

[0066] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0067] It will be apparent to those skilled in the art that this application is not limited to the details of the exemplary embodiments described above, and that this application can be implemented in other specific forms without departing from the spirit or essential characteristics of this application. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this application is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this application. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A half-bridge power module, characterized in that, include: Upbridge transistor group, downbridge transistor group, and upbridge DBC board and downbridge DBC board arranged horizontally and connected by bonding wires; The upper bridge transistor group and the lower bridge transistor group are respectively disposed on the upper bridge DBC board and the lower bridge DBC board; The vertical side of the upper bridge DBC board near the lower bridge DBC board is used to bring out the power control terminals of the upper bridge transistor group; The vertical side of the lower bridge DBC board near the upper bridge DBC board is used to bring out the power control terminals of the lower bridge transistor group; The vertical side of the upper bridge DBC board away from the lower bridge DBC board is used to bring out the signal monitoring terminals of the upper bridge transistor group and the lower bridge transistor group.

2. The half-bridge power module according to claim 1, characterized in that, The lower bridge DBC board includes: a lower bridge ceramic substrate, and a lower bridge emitter control copper foil, a lower bridge collector control copper foil, and a first lower bridge auxiliary connection copper foil located on the front side of the lower bridge ceramic substrate. The lower bridge ceramic substrate includes: a first vertical side and a second vertical side parallel in the vertical direction, and a first horizontal side and a second horizontal side parallel in the horizontal direction; wherein, the first vertical side is the vertical side of the lower bridge ceramic substrate away from the upper bridge DBC board, and the second vertical side is the vertical side of the lower bridge ceramic substrate close to the upper bridge DBC board; The lower bridge emitter control copper foil is located on the second vertical side of the lower bridge ceramic substrate; The lower bridge collector control copper foil is located at the center of the lower bridge ceramic substrate and extends to the first horizontal side and the second vertical side of the lower bridge ceramic substrate. The first lower bridge auxiliary connection copper foil is located on the second horizontal side and the first vertical side of the lower bridge ceramic substrate.

3. The half-bridge power module according to claim 2, characterized in that, The upper bridge DBC board includes: an upper bridge ceramic substrate, and upper bridge collector control copper foil, first upper bridge auxiliary connection copper foil, second upper bridge auxiliary connection copper foil, third upper bridge auxiliary connection copper foil, second lower bridge auxiliary connection copper foil, third lower bridge auxiliary connection copper foil, upper bridge gate monitoring copper foil, upper bridge emitter monitoring copper foil, lower bridge emitter monitoring copper foil, and lower bridge gate monitoring copper foil located on the front side of the upper bridge ceramic substrate. The upper bridge ceramic substrate includes: a third vertical side and a fourth vertical side parallel in the vertical direction, and a third horizontal side and a fourth horizontal side parallel in the horizontal direction; wherein, the third vertical side is the vertical side of the upper bridge ceramic substrate close to the lower bridge DBC board, the fourth vertical side is the vertical side of the upper bridge ceramic substrate away from the lower bridge DBC board, the third horizontal side and the first horizontal side are located on a first horizontal line, and the fourth horizontal side and the second horizontal side are located on a second horizontal line; The upper bridge gate monitoring copper foil, the upper bridge emitter monitoring copper foil, the lower bridge emitter monitoring copper foil, and the lower bridge gate monitoring copper foil are arranged sequentially along the vertical direction on the fourth vertical side of the upper bridge ceramic substrate; The second lower bridge auxiliary connection copper foil is located on the fourth horizontal side of the upper bridge ceramic substrate, and one end of the second lower bridge auxiliary connection copper foil is close to the lower bridge gate monitoring copper foil, while the other end of the second lower bridge auxiliary connection copper foil is close to the first lower bridge auxiliary connection copper foil. The third lower bridge auxiliary connection copper foil is located at the center of the upper bridge ceramic substrate and extends horizontally; one end of the third lower bridge auxiliary connection copper foil is close to the lower bridge emitter monitoring copper foil, and the other end of the third lower bridge auxiliary connection copper foil extends to the third vertical side of the upper bridge ceramic substrate. The third upper bridge auxiliary connection copper foil is close to the upper bridge gate monitoring copper foil; the first upper bridge auxiliary connection copper foil is located on the third vertical side of the upper bridge ceramic substrate; The second upper bridge auxiliary connection copper foil is located at the center of the upper bridge ceramic substrate and is parallel to the third lower bridge auxiliary connection copper foil; one end of the second upper bridge auxiliary connection copper foil is close to the upper bridge emitter monitoring copper foil, and the other end of the second upper bridge auxiliary connection copper foil is close to the first upper bridge auxiliary connection copper foil. The upper bridge collector control copper foil is located in the center portion of the upper bridge ceramic substrate and is close to the first upper bridge auxiliary connection copper foil, the second upper bridge auxiliary connection copper foil and the third upper bridge auxiliary connection copper foil.

4. The half-bridge power module according to claim 3, characterized in that, The upper bridge transistor group includes an upper bridge IGBT group and an upper bridge FRD group; the lower bridge transistor group includes a lower bridge IGBT group and a lower bridge FRD group. The collector of the upper bridge IGBT group and the cathode of the upper bridge FRD group are both welded to the upper bridge collector control copper foil; The gate of the upper bridge IGBT group is connected to the third upper bridge auxiliary connection copper foil via a bonding wire, and the third upper bridge auxiliary connection copper foil is connected to the upper bridge gate monitoring copper foil via a bonding wire. The emitter of the upper IGBT group and the anode of the upper FRD group are connected to the first upper bridge auxiliary connection copper foil via bonding wires. The first upper bridge auxiliary connection copper foil is connected to the lower bridge collector control copper foil via bonding wires. The first upper bridge auxiliary connection copper foil is also connected to the second upper bridge auxiliary connection copper foil via bonding wires. The second upper bridge auxiliary connection copper foil is connected to the upper bridge emitter monitoring copper foil via bonding wires. The collector of the lower bridge IGBT group and the cathode of the lower bridge FRD group are both welded to the lower bridge collector control copper foil; The gate of the lower bridge IGBT group is connected to the first lower bridge auxiliary connection copper foil via a bonding wire, the first lower bridge auxiliary connection copper foil is connected to the second lower bridge auxiliary connection copper foil via a bonding wire, and the second lower bridge auxiliary connection copper foil is connected to the lower bridge gate monitoring copper foil via a bonding wire. The emitter of the lower bridge IGBT group and the anode of the lower bridge FRD group are connected to the lower bridge emitter control copper foil via bonding wires. The lower bridge emitter control copper foil is connected to the third lower bridge auxiliary connection copper foil via bonding wires. The third lower bridge auxiliary connection copper foil is connected to the lower bridge emitter monitoring copper foil via bonding wires.

5. The half-bridge power module according to claim 4, characterized in that, The upper bridge IGBT group and the upper bridge FRD group are arranged horizontally, with the upper bridge IGBT group close to the fourth vertical side of the upper bridge ceramic substrate and the upper bridge FRD group close to the third vertical side of the upper bridge ceramic substrate. The upper bridge IGBT group consists of multiple vertically arranged upper bridge IGBT chips, and the upper bridge FRD group consists of multiple vertically arranged upper bridge FRD chips.

6. The half-bridge power module according to claim 4, characterized in that, The lower bridge IGBT group and the lower bridge FRD group are arranged horizontally, with the lower bridge IGBT group close to the first vertical side of the lower bridge ceramic substrate and the lower bridge FRD group close to the second vertical side of the lower bridge ceramic substrate. The lower-bridge IGBT group consists of multiple vertically arranged lower-bridge IGBT chips, and the lower-bridge FRD group consists of multiple vertically arranged lower-bridge FRD chips.

7. The half-bridge power module according to claim 3, characterized in that, The power control terminals of the upper bridge transistor group include: an upper bridge collector control terminal; the upper bridge collector control terminal is soldered onto the upper bridge collector control copper foil; The power control terminals of the lower bridge transistor group include: a lower bridge collector control terminal and a lower bridge emitter control terminal; the lower bridge collector control terminal and the lower bridge emitter control terminal are respectively soldered onto the lower bridge collector control copper foil and the lower bridge emitter control copper foil; The signal monitoring terminals of the upper bridge transistor group include: an upper bridge gate monitoring terminal and an upper bridge emitter monitoring terminal; the upper bridge gate monitoring terminal and the upper bridge emitter monitoring terminal are respectively soldered onto the upper bridge gate monitoring copper foil and the upper bridge emitter monitoring copper foil; The signal monitoring terminals of the lower bridge transistor group include: a lower bridge emitter monitoring terminal and a lower bridge gate monitoring terminal; the lower bridge emitter monitoring terminal and the lower bridge gate monitoring terminal are respectively soldered onto the lower bridge emitter monitoring copper foil and the lower bridge gate monitoring copper foil.

8. The half-bridge power module according to claim 3, characterized in that, The upper bridge DBC board also includes an upper bridge heat dissipation copper foil, which is located on the back side of the upper bridge ceramic substrate; The lower bridge DBC board also includes a lower bridge heat dissipation copper foil, which is located on the back side of the lower bridge ceramic substrate.

9. The half-bridge power module according to claim 3, characterized in that, The half-bridge power module also includes a thermistor, and the upper bridge DBC board also includes a first temperature monitoring copper foil and a second temperature monitoring copper foil. The upper bridge gate monitoring copper foil, the upper bridge emitter monitoring copper foil, the first temperature monitoring copper foil, the second temperature monitoring copper foil, the lower bridge emitter monitoring copper foil, and the lower bridge gate monitoring copper foil are arranged in sequence along the vertical direction on the fourth vertical side of the upper bridge ceramic substrate; The two ends of the thermistor are respectively soldered to the first temperature monitoring copper foil and the second temperature monitoring copper foil. The first temperature monitoring copper foil is used to lead out the first temperature monitoring terminal, and the second temperature monitoring copper foil is used to lead out the second temperature monitoring terminal.

10. An electronic device, characterized in that, The electronic device includes a half-bridge power module as described in any one of claims 1-9.

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