Multi-stage flow guide nozzle structure of semiconductor coating equipment

Abstract

The utility model relates to a kind of multistage flow guide nozzle structure of semiconductor coating equipment, including the inlet connecting part for being connected with external washing liquid pipeline and the three-stage tapering-tapering flow passage fixedly connected with inlet connecting part, wherein, three-stage tapering-tapering flow passage includes first-stage tapering section, second-stage equal-diameter section, third-stage expanding section connected in turn, and third-stage expanding section is hyperbolic profile. By tapering section gentle acceleration and expanding section kinetic energy dissipation, flow state is transitioned from turbulent flow to laminar flow, flow stability is significantly improved, effectively suppresses the pressure fluctuation caused by flow rate mutation, ensures wafer surface cleaning uniformity.

Description

Technical Field

[0001] This utility model relates to a nozzle structure for back-side rinsing of a rotating unit in a coating and developing machine, specifically to a multi-stage flow guiding nozzle structure for a semiconductor coating equipment. Background Technology

[0002] In semiconductor manufacturing, the back-side rinsing unit of a coating machine sprays cleaning fluid onto the wafer edge through nozzles to remove photoresist residue and contaminants. As process nodes continue to advance, the requirements for cleaning uniformity and defect control become increasingly stringent, and the insufficient fluid stability of traditional nozzles has become a key bottleneck restricting yield improvement.

[0003] 1. Analysis of Existing Technical Problems (1) Turbulence and bubble problems Traditional backwash nozzles often employ a single tapered or straight flow channel design, which leads to flow fluctuations of ±12%-15% caused by turbulence at high flow rates (3-5 m / s). In semiconductor coating, due to flow channel design defects, traditional nozzles have bubble densities as high as 110-130 bubbles / cm³, which is particularly pronounced in low-viscosity photoresist coating.

[0004] (2) Surface retention effect The roughness of the nozzle inner wall (Ra>1.6um) and the hydrophilicity of the material (contact angle<90°) lead to cleaning fluid residue, especially under low flow rate (<50ml / min) conditions, the accumulation of liquid film causes flow lag.

[0005] (3) Defects of passive rectification technology Existing improvement solutions, by adding fixed guide vanes or metal screens within the flow channel, can partially suppress turbulence, but this increases pressure loss by more than 20% and is not compatible with cleaning fluids of different viscosities. Furthermore, conventional hydrophobic coatings (such as PTFE) are prone to peeling in strong acid (pH < 2) or strong alkali (pH > 12) environments, have a lifespan of less than 500 hours, and require frequent maintenance. Summary of the Invention

[0006] This invention provides a multi-stage flow guide nozzle structure for semiconductor coating equipment. By gradually accelerating in the converging section and dissipating kinetic energy in the expanding section, the flow state transitions from turbulent to laminar flow, significantly improving flow stability and effectively suppressing pressure fluctuations caused by sudden changes in flow velocity, thus ensuring uniform cleaning of the wafer surface.

[0007] The technical solution adopted in this utility model is: a multi-stage flow guiding nozzle structure for semiconductor coating equipment, including an inlet connection part (101) for connecting to an external cleaning fluid pipeline and a three-stage tapering-expanding flow channel fixedly connected to the inlet connection part (101), wherein, The three-stage tapering-expanding flow channel includes a first-stage tapering section (102), a second-stage constant-diameter section (104), and a third-stage expanding section (106) connected in sequence. The third-stage expanding section (106) has a hyperbolic profile.

[0008] Based on the above scheme, as a preferred option, the inlet connection (101) is an external threaded interface made of 316L stainless steel.

[0009] Based on the above scheme, as a preferred option, the inner wall of the three-stage tapered-expanding flow channel has a superhydrophobic coating (105).

[0010] Based on the above scheme, as a preferred option, the material of the three-stage tapering-expanding flow channel is ceramic resin.

[0011] Based on the above scheme, as a preferred option, the first-stage tapering section (102) has a spiral guide groove (103) with a groove depth of 0.1-0.3 mm, a pitch of 6-10 mm, a spiral angle of 40-50°, a groove bottom width of 0.1-0.2 mm, and a trapezoidal cross-section.

[0012] Based on the above scheme, as a preferred option, the cone angle of the first-stage tapered section (102) is 10-15°.

[0013] Based on the above scheme, as a preferred option, the diameter of the second equal diameter section (104) is the same as the outlet diameter of the first tapering section.

[0014] Based on the above scheme, as a preferred option, a honeycomb screen (107) is fixedly installed at the outlet end of the third-stage gradually expanding section (106).

[0015] Based on the above scheme, as a preferred option, the honeycomb screen (107) is made of alumina ceramic material, with regular hexagonal honeycomb holes, a hole diameter of φ0.4-0.6mm, a wall thickness of 0.1-0.2mm, a screen thickness of 1.2-1.8mm, and a porosity of 65-75%.

[0016] Based on the above scheme, as a preferred option, the radius of curvature R of the third-stage gradually expanding section (106) is 15-25mm, and the outlet diameter is φ5-8mm.

[0017] The present invention has the following technical advantages: By gradually accelerating in the contraction section and dissipating kinetic energy in the expansion section, the flow state transitions from turbulent to laminar. Flow stability is significantly improved, effectively suppressing pressure fluctuations caused by sudden changes in flow velocity and ensuring uniform cleaning of the wafer surface.

[0018] The spiral guide channel forces the fluid to swirl, using centrifugal force to drive bubbles away from the channel wall, reducing bubble retention. The honeycomb screen decomposes large-scale eddies into vortices, suppressing bubble aggregation and particulate contamination, thus improving the quality of wafer edge cleaning.

[0019] The coating surface forms a micro-nano hierarchical rough structure, significantly reducing fluid adhesion and retention, ensuring consistent flow response under low flow conditions. The coating also exhibits excellent chemical corrosion resistance, maintaining stable hydrophobic properties even after long-term exposure to strong acid and alkali cleaning solutions, thus extending nozzle lifespan.

[0020] The hyperbolic gradually expanding section reduces the risk of boundary layer separation and lowers pressure loss by smoothing the hydrostatic pressure recovery gradient. The high porosity design of the honeycomb screen achieves turbulence suppression while minimizing flow resistance, resulting in a significantly lower overall pressure loss compared to traditional guide vanes or screen solutions. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of this utility model. Detailed Implementation

[0022] To further understand this utility model, the following detailed description is provided in conjunction with embodiments. However, this is not intended to limit the scope of the utility model. It should be understood that these descriptions are only for further illustrating the features and advantages of the utility model, and not for limiting the scope of the claims. Any equivalent substitutions made in the art based on the disclosure of this utility model are within the protection scope of this utility model.

[0023] Example 1, as Figure 1 As shown, a multi-stage flow guiding nozzle structure for a semiconductor coating equipment includes: The inlet connector (101) is used to connect to the external cleaning fluid pipeline. The inlet connector (101) is an external threaded interface, such as (M8×1 specification, M10×1 specification, M12×1 specification). In this solution, the M8×1 specification is preferred. The material is 316L stainless steel. The standardized interface ensures quick installation. The stainless steel material is corrosion resistant and compatible with semiconductor cleaning fluid.

[0024] The three-stage tapering-expanding flow channel is fixedly connected to the inlet connection (101). The three-stage tapering-expanding flow channel includes a first-stage tapering section (102), a second-stage equal-diameter section (104), and a third-stage expanding section (106) connected in sequence. The third-stage expanding section (106) has a hyperbolic profile.

[0025] The cone angle of the first-stage tapered section (102) is 10-15°, preferably 12°. When the cone angle is 12° and the inlet diameter is φ8mm matching the inlet connection (101), the length of the first-stage tapered section (102) is 15mm and the outlet diameter is φ3mm.

[0026] Function: By gradually narrowing the cone angle (compared to the traditional 20° cone angle), fluid acceleration is reduced, thus avoiding turbulence caused by boundary layer separation.

[0027] The diameter of the second-stage equal diameter section (104) is the same as the outlet diameter of the first tapering section. In preferred dimensions, the diameter of the second-stage equal diameter section (104) is φ3mm, and the length is 8mm, 10mm, 12mm, etc., with the length preferably being 10mm.

[0028] Function: Stabilizes fluid velocity distribution and eliminates residual kinetic energy fluctuations in the initial stage.

[0029] The radius of curvature of the third-stage gradually expanding section (106) is R=15-25mm, and the outlet diameter is φ5-8mm. It is preferred to use a radius of curvature R=20mm and an outlet diameter of φ6mm.

[0030] Function: By using hyperbolic expansion, the hydrostatic pressure recovery gradient is reduced, boundary layer separation is suppressed, and outlet turbulence energy is reduced.

[0031] Traditional nozzles employ single-stage tapering or straight-tube flow channels, making abrupt changes in fluid kinetic energy more prone to inducing turbulence. This invention, however, achieves a stepped release of kinetic energy through a three-stage flow channel (tapering → constant diameter → expanding). Specifically, the tapering section features a 12° cone angle (traditionally 20°) to reduce acceleration; the constant diameter section stabilizes the flow velocity distribution and eliminates kinetic energy fluctuations; and the expanding section uses a hyperbolic profile to gradually restore static pressure and prevent boundary layer separation.

[0032] Example 2, based on Example 1, the material of the three-stage tapered-expanding flow channel is ceramic resin. The inner wall of the three-stage tapered-expanding flow channel has a superhydrophobic coating (105), which is formed by the deposition of fluorinated silica (F-SiO2) nanoparticles (particle size 50nm) through CVD process to form a graded rough surface, reducing the retention of cleaning fluid (residual amount <0.05um), adapting to micro-flow conditions as low as 50ml / min, and resistant to strong acids and alkalis (pH 1~13).

[0033] The coating surface forms a micro-nano hierarchical rough structure, significantly reducing fluid adhesion and retention, ensuring consistent flow response under low flow conditions. The coating also exhibits excellent chemical corrosion resistance, maintaining stable hydrophobic properties even after long-term exposure to strong acid and alkali cleaning solutions, thus extending nozzle lifespan.

[0034] In Example 3, based on Example 1, the inner walls of the first-stage tapering section (102), the second-stage constant-diameter section (104), and the third-stage expanding section (106) have spiral guide grooves (103), with a groove depth of 0.1-0.3 mm, a pitch of 6-10 mm, a spiral angle of 40-50°, a groove bottom width of 0.1-0.2 mm, and a trapezoidal cross-section. Preferably, the groove depth is 0.2 mm, the pitch is 8 mm, the spiral angle is 45°, and the groove bottom width is 0.1 mm.

[0035] Function: Forces the fluid to generate swirling motion, using centrifugal force to drive bubbles away from the wall to the center of the flow channel, reducing bubble adhesion; at the same time, the swirling flow superimposes with the mainstream flow, reducing the lateral velocity gradient.

[0036] A honeycomb screen (107) is fixedly installed at the outlet end of the third-stage gradually expanding section (106) by laser welding. The honeycomb screen (107) is made of alumina ceramic material with regular hexagonal honeycomb holes, a hole diameter of φ0.4-0.6mm, a wall thickness of 0.1-0.2mm, a screen thickness of 1.2-1.8mm, and a porosity of 65-75%. It is preferred to use a hole diameter of φ0.5mm, a wall thickness of 0.1mm, a screen thickness of 1.5mm, and a porosity of 70%. Of course, other materials and sizes with similar functions can also be used.

[0037] Function: Decomposes large-scale eddies into micron-scale vortices, accelerating the dissipation of turbulent kinetic energy.

[0038] Traditional technologies using fixed guide vanes or single screens can only suppress turbulence in specific frequency bands, resulting in high pressure loss and poor adaptability. This invention, however, utilizes a spiral guide channel with a 45° spiral angle to generate centrifugal force, driving bubbles away from the wall; and a honeycomb screen with a hexagonal array of holes to decompose the eddy current scale, increasing pressure loss by only about 8%.

[0039] The preferred embodiments of this utility model have been described in detail above. However, it should be understood that the above description is for illustrative purposes only and does not constitute any limitation on the scope of this utility model. Those skilled in the art can make substitutions or changes to certain features of this utility model without departing from the spirit and scope of this utility model, and such substitutions or changes should be considered to fall within the protection scope of the claims of this utility model.

Claims

1. A multi-stage flow guiding nozzle structure for a semiconductor coating equipment, characterized in that, It includes an inlet connection (101) for connecting to an external cleaning fluid pipeline and a three-stage converging-diverging flow channel fixedly connected to the inlet connection (101), wherein, The three-stage tapering-expanding flow channel includes a first-stage tapering section (102), a second-stage constant-diameter section (104), and a third-stage expanding section (106) connected in sequence. The third-stage expanding section (106) has a hyperbolic profile.

2. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, The inlet connection (101) is an external threaded interface made of 316L stainless steel.

3. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, The inner wall of the three-stage tapering-expanding channel has a superhydrophobic coating (105).

4. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, The material of the three-stage tapered-expanding flow channel is ceramic resin.

5. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, The first-stage tapering section (102) has a spiral guide groove (103) with a groove depth of 0.1-0.3 mm, a pitch of 6-10 mm, a spiral angle of 40-50°, a groove bottom width of 0.1-0.2 mm, and a trapezoidal cross-section.

6. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 5, characterized in that, The cone angle of the first-stage tapered section (102) is 10-15°.

7. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, The second equal diameter section (104) has the same exit diameter as the first tapering section.

8. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 1, characterized in that, A honeycomb screen (107) is fixedly installed at the outlet end of the third-stage gradually expanding section (106).

9. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 8, characterized in that, The honeycomb screen (107) is made of alumina ceramic material, with regular hexagonal honeycomb holes, a hole diameter of φ0.4-0.6mm, a wall thickness of 0.1-0.2mm, a screen thickness of 1.2-1.8mm, and a porosity of 65-75%.

10. The multi-stage flow guiding nozzle structure of the semiconductor coating equipment as described in claim 8, characterized in that, The radius of curvature of the third-stage expanding section (106) is R=15-25mm, and the outlet diameter is φ5-8mm.

Images