Doped components and single crystal furnaces

Abstract

The application provides a doping assembly for a single crystal furnace and the single crystal furnace. The doping assembly comprises: a shell with a chamber, the shell comprising a feeding port for feeding a dopant into the chamber, a discharging port for discharging the dopant, the feeding port being hingedly connected with a sealing cover, and the discharging port being provided with a discharging pipe; a weighing sensor arranged in the chamber; a mounting frame fixed to the weighing sensor; a storage bin mounted to the mounting frame and used for storing the dopant; a conveying mechanism mounted to the mounting frame and used for conveying the dopant in the storage bin to the discharging pipe; and a control system in communication connection with the weighing sensor and the conveying mechanism. The application realizes real-time addition of the dopant into the furnace body, automatic feeding according to the process requirements, high-precision feeding on demand, no manual operation, and accurate control of the axial resistivity of the crystal bar.

Description

Technical Field

[0001] This application relates to the field of single-crystal silicon preparation, and more particularly to a doped component and a single-crystal furnace having the doped component. Background Technology

[0002] In the growth process of semiconductor silicon single crystals, in order to improve the conductivity of N-type or P-type silicon single crystals, a certain amount of master alloy dopant needs to be added to the silicon melt during the growth process. This process plays a decisive role in the electrical properties of the final crystal rod, especially the uniformity of axial resistivity.

[0003] Currently, there are two main methods for adding master alloy dopants. The first method, in RCz crystal growth, involves directly adding the master alloy dopant during pre-loading, mixing it with the silicon material. Once the crystal rod has grown and the molten silicon has reduced to a certain volume, the master alloy dopant is further added during external feeding. However, due to phosphorus's low segregation coefficient, adding the master alloy all at once can cause a large axial resistivity distribution in the crystal rod, affecting its quality. The second method, in CCz crystal growth, involves simultaneously adding silicon material to the crucible as the silicon single crystal rod grows. A certain amount of master alloy dopant is manually added through pre-fabricated pipes based on the rod length or unit weight, along with the continuously added silicon material. However, manual operation has a large precision error, easily leading to over- or under-doping in a single operation. It is also difficult to guarantee long-term, high-frequency, and equally spaced repeated feeding, directly resulting in uneven axial resistivity of the crystal rod, affecting batch-to-batch product consistency. Furthermore, manual operation carries the risk of leakage, causing crystal rod oxidation and wire breakage. Utility Model Content

[0004] This application provides a doped component and a single crystal furnace having the doped component.

[0005] To achieve the above objectives, the technical solution provided in this application is as follows: A doped component for a single crystal furnace, comprising: The housing has a cavity inside, and includes a feed port for feeding dopant into the cavity and a discharge port for discharging dopant. The feed port is connected to a sealing cap and the discharge port is provided with a discharge pipe. A weighing sensor is installed inside the cavity; A mounting frame fixed to the measuring end of the weighing sensor; A storage bin installed on the mounting frame for storing dopants, wherein the inlet of the storage bin is connected to the feeding port; The conveying mechanism installed on the mounting frame is used to convey the dopant in the storage bin to the discharge pipe; The control system is communicatively connected to the weighing sensor and the conveying mechanism.

[0006] As a further improvement to this application, the conveying mechanism includes: A conveying cylinder extending horizontally along the axis, the conveying cylinder including a cylinder body and a spiral blade disposed on the inner wall of the cylinder body, the spiral blade extending spirally along the axis of the cylinder body, one end of the cylinder body being a feed end connected to the discharge port of the storage bin, and the other end being a discharge end connected to the discharge pipe. A drive module for driving the conveyor cylinder to rotate about its axis.

[0007] As a further improvement of this application, the pitch of the spiral blade is 4 to 5 times the average particle size of the dopant.

[0008] As a further improvement of this application, the cylinder includes a first end face located at the feeding end, a second end face located at the discharging end, and a cylinder body connecting the first end face and the second end face. The first end face is provided with a feeding port that is opposite to the discharging port of the storage bin. The cylinder body is provided with a discharging port at one end near the second end face, and the discharging port is connected to the feeding pipe.

[0009] As a further improvement of this application, a plurality of the discharge ports are spaced apart and evenly disposed on the peripheral wall of the cylinder body near the second end face.

[0010] As a further improvement of this application, the doping component further includes a guide cylinder mounted on the mounting frame, the guide cylinder being used to connect the discharge port and the feed pipe, and the guide cylinder having an arc-shaped opening that mates with one end of the cylinder body near the second end face.

[0011] As a further improvement to this application, the mounting frame includes: Mounting plate, the mounting plate being fixed to the measuring end of the weighing sensor; A first support frame is fixed to the mounting plate. The first support frame has a mounting hole. One end of the cylinder body near the first end face is rotatably connected to the mounting hole via a bearing. The storage bin is fixed to the first support frame. A second support frame is provided at an interval from the first support frame along the axial direction of the cylinder body. A rotating frame is rotatably connected to the second support frame. The second end face is fixed to the rotating frame. The drive module is used to drive the rotating frame to rotate.

[0012] As a further improvement of this application, the drive module includes a drive motor mounted on the mounting plate, a drive wheel connected to the output end of the drive motor, a driven wheel connected to the rotating frame, and a belt wound around the drive wheel and the driven wheel.

[0013] As a further improvement to this application, the housing includes: The base plate, the discharge port is located on the base plate, and the weighing sensor is fixed on the base plate; A cover body is detachably connected to the base plate, the cover body and the base plate enclose the cavity, and the feeding port is located on the top wall of the cover body.

[0014] To achieve the above-mentioned objectives, this application also provides a single crystal furnace, including the doping components described above.

[0015] Compared with existing technologies, the advantages of this application are as follows: The doping component in this application, by setting a storage bin for storing a preset amount of dopant and a conveying mechanism for conveying the dopant in the chamber, and by supporting all the actuators such as the storage bin and the conveying mechanism as a functional whole on the measuring end of the weighing sensor through a mounting frame; when dopant needs to be added into the furnace, the control system drives the conveying mechanism to move, and accurately calculates the actual weight of the discharged dopant by monitoring the reduction of the total weight in real time through the weighing sensor. When the actual weight of the discharged dopant reaches the preset amount, the control system controls the conveying mechanism to stop, thereby forming a high-precision closed-loop control. This design enables the real-time addition of dopant into the furnace, and can automatically and accurately feed materials on demand according to process requirements without manual operation. It can achieve precise control of the axial resistivity of the crystal rod, and fundamentally solves the problem of dynamic vacuum leakage that may be caused by the need for moving parts (such as rotating shafts) to penetrate vacuum seals in traditional designs, greatly improving the stability and safety of the production process. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the doped component in this application; Figure 2 yes Figure 1 A schematic diagram of the structure of the doped components after the cover is removed; Figure 3 yes Figure 2 A structural diagram from another angle; Figure 4 yes Figure 3 Sectional view along the middle AA direction; Figure 5 This is a schematic diagram of the structure of a single crystal furnace in a specific embodiment of this application. Detailed Implementation

[0017] The following will be combined with the appendix Figure 1-5 The specific embodiments shown herein provide a detailed description of this application. However, these embodiments do not limit this application, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of this application.

[0018] The terms "first," "second," etc., used in this application are only used to distinguish similar objects and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Furthermore, the terms "comprising," "having," etc., and any variations thereof, are intended to cover non-exclusive inclusion. Additionally, it should be noted that unless otherwise expressly specified and limited, the terms "set," "connected," and "fixed" should be interpreted broadly. For example, a connection can be a direct connection or an indirect connection through an intermediate medium; it can be a fixed connection, a movable connection, a detachable connection, or an integral connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0019] It should be noted that, unless otherwise specified, the specific embodiments and features disclosed in this application can be combined with each other.

[0020] Below, please combine Figures 1-5 As shown, this application provides a doping component 10 for a single crystal furnace 100. The doping component 10 is used to realize fully automated and high-precision on-demand dopant feeding into the furnace body 20 of the single crystal furnace 100 during the crystal pulling process, so as to significantly improve the uniformity of the axial resistivity of the crystal rod.

[0021] In one specific embodiment, the dopant is a master alloy dopant. Of course, this is not the only option.

[0022] The doping assembly 10 includes a housing 1 with a chamber, a weighing sensor 2 disposed within the chamber, a mounting frame 3 fixed to the measuring end of the weighing sensor 2, a storage bin 4 mounted on the mounting frame 3 for storing dopants, a conveying mechanism 5 mounted on the mounting frame 3, and a control system. The control system can be a PLC or an industrial computer. This control system is communicatively connected to the weighing sensor 2 and the conveying mechanism 5 to automatically coordinate and control the operation of each component according to a preset program and real-time data from each component. This achieves fully automatic, high-precision, on-demand feeding of materials into the furnace body 20 of the single crystal furnace 100, significantly improving the uniformity of the axial resistivity of the crystal rod.

[0023] Understandably, the chamber inside the outer shell 1 is a sealed space that is connected to the furnace body 20 of the single crystal furnace 100 and can be evacuated to a vacuum state. This is to completely isolate all the internal working mechanisms of the doped component 10 from the external atmospheric environment during the crystal pulling process of the single crystal furnace 100, thereby matching the vacuum growth environment inside the single crystal furnace 100 and avoiding any potential contamination or pressure fluctuations.

[0024] The outer casing 1 includes a feed port for adding dopant into the chamber and a discharge port for discharging dopant. The inlet of the storage hopper 4 is connected to the feed port, and the feed port is connected to a sealing cover 11. When dopant needs to be replenished from the outside, the sealing cover 11 is opened to replenish a preset amount of dopant into the storage hopper 4 through the feed port; when dopant does not need to be replenished from the outside, the sealing cover 11 is closed to maintain the vacuum state in the chamber during the crystal pulling process. The discharge port is provided with a discharge pipe 6, and the conveying mechanism 5 is used to convey the dopant in the storage hopper 4 to the discharge pipe 6. The discharge pipe 6 extends to a target position inside the single crystal furnace 100 to facilitate the addition of dopant into the furnace body 20.

[0025] The doping component 10 in this application comprises a storage bin 4 for storing a preset amount of dopant and a conveying mechanism 5 for conveying the dopant, all of which are supported as a functional unit by the mounting frame 3 and the measuring end of the weighing sensor 2. During operation, the control system does not directly measure the weight of a single feeding, but continuously monitors the total weight of the entire mounting frame 3, its components, and the dopant in real time using the weighing sensor 2, making it less susceptible to impact and vibration interference. When dopant needs to be added to the furnace body 20, the control system drives the conveying mechanism 5 and accurately calculates the actual weight of the discharged dopant by monitoring the decrease in total weight in real time using the weighing sensor 2. When the actual weight of the discharged dopant reaches the preset amount, the control system stops the conveying mechanism 5, thus forming a high-precision closed-loop control. This design enables the real-time addition of dopants into the furnace body 20 and allows for fully automated and high-precision on-demand feeding according to process requirements, without the need for manual operation. It also enables precise control of the axial resistivity of the crystal rod and fundamentally solves the problem of dynamic vacuum leakage that may occur when moving parts (such as rotating shafts) need to pass through vacuum seals in traditional designs, greatly improving the stability and safety of the production process.

[0026] In a preferred embodiment, the outer casing 1 includes a base plate 12 and a cover 13 detachably connected to the base plate 12, the cover 13 and the base plate 12 together forming a chamber. A discharge port is located on the base plate 12, and a weighing sensor 2 is also fixed to the base plate 12. A feeding port is located on the top wall of the cover 13. This split structure allows users to easily remove the cover 13 to clean and maintain the internal mechanisms of the doped component 10, significantly improving the maintainability of the overall doped component 10 and reducing production downtime.

[0027] Specifically, the cover 13 and the base plate 12 can be detachably connected by bolts and vacuum sealing rings.

[0028] In a preferred embodiment, the feeding port and the discharging port are staggered in the vertical direction, that is, the feeding port and the discharging port are a certain distance apart in the horizontal direction. The conveying mechanism 5 includes a conveying cylinder 51 extending horizontally in the axial direction and a drive module 52 for driving the conveying cylinder 51 to rotate around its axis. The conveying cylinder 51 includes a cylinder body 511 and helical blades 512 disposed on the inner wall of the cylinder body 511. One end of the cylinder body 511 is a feeding end connected to the discharge port of the storage bin 4, and the other end is a discharging end connected to the discharging pipe 6. The helical blades 512 extend helically along the axial direction of the cylinder body 511, that is, the helical blades 512 extend helically from the feeding end to the discharging end. The structure composed of the internal helical blades 512 is also called an internal turbine structure, which can stably and uniformly convey granular master alloy dopants, further ensuring the conveying accuracy, avoiding excessive compression or grinding of dopant particles through gentle thrust, and effectively preventing dopants from getting stuck during the conveying process. Of course, this is not a limitation. In other embodiments, the spiral blades 512 may not be provided inside the conveying cylinder 51. In this case, a spiral conveying rod rotatably connected inside the conveying cylinder 51 can be provided, and the drive module 52 can be used to drive the spiral conveying rod to rotate around its axis to realize the conveying of the dopant. It is known that in the embodiment where a spiral conveying rod is provided, because there is a gap between the spiral blades on the spiral conveying rod and the inner wall of the conveying cylinder, jamming is likely to occur during the conveying process.

[0029] In a preferred embodiment, the pitch of the helical blade 512 is 4 to 5 times the average particle size of the dopant. This ensures that the dopant particles receive optimal axial thrust, allowing them to be smoothly pushed to the discharge end by the helical blade 512 without slippage or backflow due to excessive pitch, and without material jamming causing blockages or uneven flow. This avoids congestion or uneven flow caused by size mismatch, thereby improving the feeding accuracy and stability of the doping component 10 to a higher level.

[0030] In one specific embodiment, the cylinder 511 includes a first end face 5111 located at the feed end, a second end face 5112 located at the discharge end, and a cylinder body 5113 connecting the first end face 5111 and the second end face 5112.

[0031] The first end face 5111 is provided with a feed port 5111a that is connected to the discharge port of the storage bin 4. Specifically, the feed port 5111a is located at the center of the first end face 5111, and the discharge port of the storage bin 4 is inserted into the cylinder 511 through the feed port 5111a. When the cylinder 511 rotates, there will be no interference between the discharge port of the storage bin 4 and the first end face 5111.

[0032] The cylindrical body 5113 has a discharge port 5113a on the peripheral wall of one end near the second end face 5112. The discharge pipe 6 is located below the discharge port 5113a and is connected to the discharge pipe 6. This side discharge method cleverly utilizes gravity in conjunction with the rotation of the cylindrical body 511 for material discharge, resulting in a simple structure and smooth discharge.

[0033] Furthermore, the cylinder 511 can be provided with several discharge ports 5113a, such as four discharge ports 5113a. These discharge ports 5113a are spaced apart and evenly distributed on the peripheral wall of the cylinder body 5113 near the second end face 5112. This ensures that at any time the conveying cylinder 51 rotates, there is always a discharge port 5113a in a lower or near-lower position for material feeding, thus avoiding the pulse-like feeding that might occur with a single-port design, resulting in more continuous and stable material discharge.

[0034] In some preferred embodiments, the doping assembly 10 further includes a guide tube 7 mounted on the mounting frame 3. Specifically, the mounting frame 3 includes a mounting plate 31 fixed to the measuring end of the weighing sensor 2. The guide tube 7 is mounted on the mounting plate 31 and located between the discharge port 5113a and the discharge pipe 6 to connect the discharge port 5113a and the discharge pipe 6. The guide tube 7 has an arc-shaped opening that mates with one end of the cylinder body 5113 near the second end face 5112. This arc-shaped opening can fit tightly against the outer wall of the rotating cylinder body 5113 with a very small gap, ensuring that the dopant falling from each discharge port 5113a on the peripheral wall can be completely and leak-free collected and smoothly guided to the discharge pipe 6 below, preventing any dopant from scattering in the chamber and interfering with high-precision weighing.

[0035] The mounting frame 3 also includes a first support frame 32 fixed to the mounting plate 31. The first support frame 32 has a mounting hole, and one end of the cylinder body 5113 near the first end face 5111 is rotatably connected to the mounting hole via a bearing. The storage bin 4 is fixed to the first support frame 32. The conveying cylinder 51 is rotatably connected to the mounting frame 3 around its axis via the first support frame 32. At the same time, the storage bin 4 is also fixed to the first support frame 32, so that the positions of the storage bin 4 and the conveying cylinder 51 in the axial direction of the conveying cylinder 51 are relatively fixed, avoiding the separation of the outlet of the storage bin 4 from the outlet port 5113a, which would cause leakage, and improving the stability and accuracy of the dopant delivery by the dopant assembly 10.

[0036] The mounting frame 3 also includes a second support frame 33 spaced apart from the first support frame 32 along the axial direction of the cylinder body 5113. A rotating frame 34 is rotatably connected to the second support frame 33, and the second end face 5112 is fixed to the rotating frame 34. The drive module 52 is used to drive the rotating frame 34 to rotate. The two axial ends of the conveying cylinder 51 are supported by the rotating frame 34 and the first support frame 32, respectively, which improves the stability of the movement of the conveying cylinder 51.

[0037] In one specific embodiment, the mounting frame 3 further includes an intermediate frame 35 disposed between the first support frame 32 and the second support frame 33, through which the conveying cylinder 51 passes, and the drive module 52 is mounted on the intermediate frame 35. This can reduce the volume of the doped component 10.

[0038] In this embodiment, the drive module 52 includes a drive motor 521 mounted on the intermediate frame 35, a drive wheel 522 connected to the output end of the drive motor 521, a driven wheel 523 connected to the rotating frame 34, and a belt 524 wound around the drive wheel 522 and the driven wheel 523. In this embodiment, a belt 524 is used for transmission instead of rigid connections such as gears. Its inherent flexibility can effectively absorb and buffer the vibrations generated during the start-up, stopping, and operation of the drive motor 521, thereby preventing these mechanical vibrations from being transmitted to the high-precision weighing sensor 2 through the mounting frame 3, ensuring the stability and accuracy of the weighing signal.

[0039] This application also provides a single crystal furnace 100, which includes the doping component 10 described above.

[0040] Combination Figure 5As shown, in one specific embodiment, the single crystal furnace 100 includes a furnace body 20, a feeding device 30 for adding silicon material into the furnace body 20, and a doping component 10 for adding dopant into the furnace body 20. The furnace body 20 includes an outer crucible 201 and an inner crucible 202. The inner crucible 202 is disposed in the silicon melt 40 of the outer crucible 201, and the bottom of the inner crucible 202 communicates with the outer crucible 201. The feeding device 30 is used to add silicon material into the silicon melt 40 outside the inner crucible 202, and the doping component 10 is used to add dopant into the silicon melt 40 outside the inner crucible 202. The device pulls crystal rods from the silicon melt 40 inside the inner crucible 202. Of course, this is not a limitation. It is understood that the structure of the single crystal furnace 100 is not limited to this. For example, the furnace body 20 may also be configured to have only one crucible or have three crucibles, etc.

[0041] Combination Figure 5 As shown, the feeding device 30 includes a housing 301, a vacuuming component (not shown), a gas filling component (not shown), a primary feeding component, a secondary feeding component, and a conveying component 304. The conveying component 304 is used to receive the silicon material in the secondary feeding component and transport it to the furnace body 20 for crystal pulling. It can be understood that the control system in the doping component 10 can also be understood as the control system of the single crystal furnace 100. This control system is communicatively connected to the vacuuming component, the gas filling component, the primary feeding component, the secondary feeding component, the conveying component 304, and the doping component 10, so as to automatically coordinate and control the operation of each component according to the preset program and the real-time data from each component, thereby realizing fully automatic and uninterrupted addition of silicon material and dopant into the furnace body 20, realizing truly uninterrupted continuous crystal pulling production, significantly improving equipment utilization and production efficiency, while ensuring the long-term stability of the thermal field during the crystal pulling process.

[0042] The housing 301 includes a housing body 301a and a partition plate 301b that divides the inner cavity of the housing body 301a into an upper cavity and a lower cavity along the height direction, with the lower cavity located below the upper cavity. The partition plate 301b has a connecting pipe 305 that connects the upper cavity and the lower cavity, and a discharge valve 306 that controls the opening and closing of the connecting pipe 305. A primary feeding assembly is located in the upper cavity, while a secondary feeding assembly and a conveying assembly 304 are located in the lower cavity. The discharge valve 306 is a high-performance vacuum isolation valve, such as a vacuum baffle valve or a vacuum butterfly valve. When the discharge valve 306 is closed, it reliably seals the connecting pipe 305, withstands the pressure difference between the upper and lower cavities, and maintains a high level of sealing, thereby achieving complete pneumatic isolation between the upper and lower cavities. When the discharge valve 306 is open, the upper and lower cavities are connected through the connecting pipe 305.

[0043] The housing body 301a has a silicon material feeding port connected to the upper cavity, and a cover 307 is connected to the silicon material feeding port for opening and closing. The silicon material feeding port is used to replenish silicon material to the primary feeding assembly from the outside when needed, and the cover 307 is used to open or seal the silicon material feeding port. Both the vacuuming assembly and the gas filling assembly are connected to the upper cavity. The vacuuming assembly, such as a vacuum pump set, is used to adjust the gas pressure in the upper and lower cavities to the preset negative pressure / vacuum state required by the crystal pulling process before crystal pulling, and to restore the upper cavity to the preset negative pressure / vacuum state required by the crystal pulling process after replenishing the primary feeding assembly. The gas filling component, such as an inert gas source (e.g., high-purity argon) connected to the backfill port, is used to replenish the protective gas in the upper and lower cavities to prevent contamination of the silicon material. At the same time, it safely restores the upper cavity to atmospheric pressure before the primary feeding component needs to be replenished, which facilitates the opening of the cover 307 and also prevents oxygen-containing air from rushing in and contaminating the cavity environment when the cover 307 is opened.

[0044] In one specific embodiment, the primary feeding assembly includes a primary storage hopper 302, the inlet of which is connected to a silicon material feeding port for receiving newly replenished silicon material from the outside. The outlet of the primary storage hopper 302 is connected to a connecting pipe 305 for conveying silicon material to the secondary feeding assembly below. The secondary feeding assembly includes a secondary storage hopper 303, the inlet of which is connected to the connecting pipe 305 to replenish the secondary storage hopper 303 through the primary storage hopper 302. The feeding device 30 in this application comprises a primary storage hopper 302 in the upper cavity and a secondary storage hopper 303 in the lower cavity, along with a discharge valve 306 that controls the connection between the primary and secondary storage hoppers 302 and 303. When the material level in the secondary storage hopper 303 is insufficient, the discharge valve 306 is opened, allowing silicon material from the primary storage hopper 302 to replenish the secondary storage hopper 303. When the material level in the primary storage hopper 302 is insufficient, the discharge valve 306 remains closed, maintaining the connection between the upper and lower cavities. Vacuum isolation allows for depressurization, silicon replenishment, and re-vacuuming of the upper cavity as the silicon replenishment process is performed. During this process, the lower cavity and the secondary storage hopper 303 are maintained under a preset negative pressure / vacuum state, enabling continuous and stable silicon replenishment into the furnace body 20. This fundamentally solves the problem of mutual interference between replenishment and feeding, achieving truly uninterrupted continuous crystal pulling production. It significantly improves equipment utilization and production efficiency, while ensuring the long-term stability of the thermal field during the crystal pulling process, resulting in better uniformity of crystal rod resistivity.

[0045] In this embodiment, the feeding pipe 6 of the doping component 10 is configured to communicate with the lower cavity. Specifically, the feeding component 304 has a feeding pipe 3041 that guides silicon material into the furnace body 20. The feeding pipe 6 of the doping component 10 is connected to the feeding pipe 3041 within the lower cavity, so that the dopant is introduced into the furnace body 20 through the feeding pipe 3041. It can be seen that at this time, the chamber inside the doping component 10 is in a communication state with the lower cavity. When the vacuum component and the gas filling component in the feeding device 30 act on the lower cavity, they simultaneously act on the chamber inside the doping component 10, which can simplify the overall structure of the single crystal furnace 100 and save costs.

[0046] The doping component 10 in this application includes a storage bin 4 for storing a preset amount of dopant and a conveying mechanism 5 for conveying the dopant within the chamber. All the actuators, including the storage bin 4 and the conveying mechanism 5, are supported as a functional unit by a mounting frame 3 on the measuring end of the weighing sensor 2. When dopant needs to be added to the furnace body 20, the control system drives the conveying mechanism 5 to operate and accurately calculates the actual weight of the discharged dopant by monitoring the reduction in total weight in real time through the weighing sensor 2. When the actual weight of the discharged dopant reaches the preset amount, the control system stops the conveying mechanism 5, thus forming a high-precision closed-loop control. This design enables the real-time addition of dopant to the furnace body 20 and allows for fully automated and high-precision on-demand feeding according to process requirements, without manual operation. It enables precise control of the axial resistivity of the crystal rod and fundamentally solves the problem of dynamic vacuum leakage that may occur when moving parts (such as rotating shafts) need to penetrate vacuum seals in traditional designs, greatly improving the stability and safety of the production process.

[0047] The above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to preferred embodiments, for example, if the technologies in different embodiments can be used in combination to achieve the corresponding effects simultaneously, the solutions are also within the protection scope of this application. Those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and scope of the technical solutions of this application.

Claims

1. A doped component for a single crystal furnace, characterized in that, include: The housing has a cavity inside, and includes a feed port for feeding dopant into the cavity and a discharge port for discharging dopant. The feed port is connected to a sealing cap and the discharge port is provided with a discharge pipe. A weighing sensor is installed inside the cavity; A mounting frame fixed to the measuring end of the weighing sensor; A storage bin installed on the mounting frame for storing dopants, wherein the inlet of the storage bin is connected to the feeding port; The conveying mechanism installed on the mounting frame is used to convey the dopant in the storage bin to the discharge pipe; The control system is communicatively connected to the weighing sensor and the conveying mechanism.

2. The doped component for a single crystal furnace as described in claim 1, characterized in that, The conveying mechanism includes: A conveying cylinder extending horizontally along the axis, the conveying cylinder including a cylinder body and a spiral blade disposed on the inner wall of the cylinder body, the spiral blade extending spirally along the axis of the cylinder body, one end of the cylinder body being a feed end connected to the discharge port of the storage bin, and the other end being a discharge end connected to the discharge pipe. A drive module for driving the conveyor cylinder to rotate about its axis.

3. The doped component for a single crystal furnace as described in claim 2, characterized in that, The pitch of the helical blades is 4 to 5 times the average particle size of the dopant.

4. The doped component for a single crystal furnace as described in claim 2, characterized in that, The cylinder includes a first end face at the inlet end, a second end face at the outlet end, and a cylinder body connecting the first end face and the second end face. The first end face is provided with an inlet port that is opposite to the outlet of the storage bin. The cylinder body is provided with an outlet port at one end near the second end face. The outlet port is connected to the discharge pipe.

5. The doped component for a single crystal furnace as described in claim 4, characterized in that, Several discharge ports are spaced apart and evenly distributed on the peripheral wall of the cylinder body near the second end face.

6. The doped component for a single crystal furnace as described in claim 4, characterized in that, The doping component also includes a guide cylinder mounted on the mounting frame. The guide cylinder is used to connect the discharge port and the feed pipe. The guide cylinder has an arc-shaped opening that matches one end of the cylinder body near the second end face.

7. The doped component for a single crystal furnace as described in claim 4, characterized in that, The mounting frame includes: Mounting plate, the mounting plate being fixed to the measuring end of the weighing sensor; A first support frame is fixed to the mounting plate. The first support frame has a mounting hole. One end of the cylinder body near the first end face is rotatably connected to the mounting hole via a bearing. The storage bin is fixed to the first support frame. A second support frame is provided at an interval from the first support frame along the axial direction of the cylinder body. A rotating frame is rotatably connected to the second support frame. The second end face is fixed to the rotating frame. The drive module is used to drive the rotating frame to rotate.

8. The doped component for a single crystal furnace as described in claim 7, characterized in that, The drive module includes a drive motor mounted on the mounting plate, a drive wheel connected to the output end of the drive motor, a driven wheel connected to the rotating frame, and a belt wound around the drive wheel and the driven wheel.

9. The doped component for a single crystal furnace as described in claim 1, characterized in that, The outer casing includes: The base plate, the discharge port is located on the base plate, and the weighing sensor is fixed on the base plate; A cover body is detachably connected to the base plate, the cover body and the base plate enclose the cavity, and the feeding port is located on the top wall of the cover body.

10. A single crystal furnace, characterized in that, The single crystal furnace includes the doping component as described in any one of claims 1 to 9.

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