Semiconductor heating floor composite structure for building

Abstract

The utility model discloses a kind of building semiconductor heating floor composite structures, floor includes the concrete floor slab layer of building original, composite structure includes by concrete floor slab layer to building indoor space sequentially layered setting air barrier, thermal insulation layer, semiconductor heating layer, protective layer, buffer layer, equipotential net layer, adhesive layer and decorative surface layer.The utility model simple structure, reasonable in design, realize convenient, produce heat by semiconductor material in semiconductor heating layer under the action of electric field, with fast, high thermal efficiency, temperature uniformity, safe and reliable, stability higher characteristics, realize clean low carbon, energy saving and environmental protection, safe and healthy, stable and efficient heating scheme, use effect is good, convenient for use.

Description

Technical Field

[0001] This utility model belongs to the field of general building construction technology, and specifically relates to a semiconductor heating floor composite structure for buildings. Background Technology

[0002] With economic development and the improvement of people's living standards, the demand for comfort, health, and personalization in living environments is increasing. As a core component of building environmental protection, heating technology is also constantly evolving. Although underfloor heating technology itself has advantages and dominates the market, traditional underfloor heating methods have significant limitations, primarily water-circulating underfloor heating. In practical applications, this has revealed numerous inherent defects, such as system complexity, high initial investment (requiring multiple components including heat sources (boilers, heat pumps), manifolds, pipes, valves, and pumps), complex system design and installation, and high initial costs; high thermal inertia and slow response (the concrete filling layer has a large heat storage capacity, requiring several hours to start up and heat up, making "on-demand heating" impossible and inflexible adjustment); troublesome maintenance (pipes are susceptible to scaling, blockage, or corrosion, requiring regular cleaning, and there is a potential risk of pipe leaks); energy consumption is greatly affected by the heat source (if using a gas boiler, operating costs are affected by gas price fluctuations; if using traditional electricity, operating costs are high); and unsuitable for localized installation or intermittent heating due to its slow heating characteristics, making it unsuitable for scenarios requiring rapid heating or partial room use (such as supplemental heating in bathrooms or heating during overtime work in offices). Utility Model Content

[0003] The technical problem to be solved by this utility model is to address the shortcomings of the prior art by providing a semiconductor heating floor composite structure for buildings. This structure is simple in structure, reasonable in design, and easy to implement. It generates heat through the semiconductor material in the semiconductor heating layer under the action of an electric field, and has the characteristics of rapid heating, high thermal efficiency, uniform temperature, safety and reliability, and high stability. It achieves a clean, low-carbon, energy-saving, environmentally friendly, safe, healthy, stable and efficient heating solution with good performance and is easy to promote and use.

[0004] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is: a semiconductor heating floor composite structure for buildings, wherein the floor includes the original concrete floor slab of the building, and the composite structure includes an air barrier layer, a heat insulation layer, a semiconductor heating layer, a protective layer, a buffer layer, an equipotential mesh layer, an adhesive layer and a decorative surface layer arranged in sequence from the concrete floor slab to the interior space of the building.

[0005] The above-mentioned semiconductor heating floor composite structure for buildings has a PE film as the air barrier layer, and the thickness of the air barrier layer is 0.13 mm.

[0006] The above-mentioned semiconductor heating floor composite structure for buildings has an insulation layer made of extruded polystyrene board with a thickness of 20mm.

[0007] The above-mentioned semiconductor heating floor composite structure for buildings, wherein the semiconductor heating layer releases far-infrared spectral lines with thermal effect in the wavelength range of 4μm to 20μm; the thickness of the semiconductor heating layer is 1mm.

[0008] The above-mentioned semiconductor heating floor composite structure for buildings has a protective layer made of PE film with a thickness of 0.13 mm.

[0009] In the above-mentioned semiconductor heating floor composite structure for buildings, the buffer layer is made of geotextile or cement blanket; the thickness of the buffer layer is 5mm to 10mm.

[0010] The above-mentioned semiconductor heating floor composite structure for buildings has an equipotential bonding layer made of a 150mm×150mm metal mesh, which is connected to the equipotential bonding terminal of the building; the thickness of the equipotential bonding layer is 3mm.

[0011] In the above-mentioned semiconductor heating floor composite structure for buildings, the bonding layer is made of cement mortar, and the thickness of the bonding layer is 25mm to 35mm.

[0012] In the above-mentioned semiconductor heating floor composite structure for buildings, the thickness of the decorative surface layer is 10mm to 12mm.

[0013] Compared with existing technologies, this invention has the following advantages: It features a simple structure, reasonable design, and convenient implementation. By utilizing the semiconductor material in the semiconductor heating layer to generate heat under the influence of an electric field, it exhibits characteristics such as rapid heating, high thermal efficiency, uniform temperature, safety, reliability, and high stability. This achieves a clean, low-carbon, energy-saving, environmentally friendly, safe, healthy, stable, and efficient heating solution. This invention effectively overcomes the inherent defects of water-based underfloor heating and metal wire cable underfloor heating, representing an important future development direction for electric underfloor heating technology. It offers good performance and is easy to promote and use.

[0014] The technical solution of this utility model will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of this utility model.

[0016] Explanation of reference numerals in the attached figures: Detailed Implementation

[0017] like Figure 1 As shown, the building semiconductor heating floor composite structure of this utility model includes the original concrete floor slab 1 of the building. The composite structure includes an air barrier layer 2, a heat insulation layer 3, a semiconductor heating layer 4, a protective layer 5, a buffer layer 6, an equipotential mesh layer 7, an adhesive layer 8, and a decorative surface layer 9, which are arranged in sequence from the concrete floor slab 1 into the interior space of the building.

[0018] In this embodiment, the air barrier 2 is made of PE film; the thickness of the air barrier 2 is 0.13 mm.

[0019] In practice, the PE films overlap by 100mm, and proper splicing and sealing are ensured. The air barrier layer 2 is used for moisture and air isolation to prevent moisture in the concrete floor slab layer 1 from migrating upwards into the composite structure.

[0020] In this embodiment, the insulation layer 3 is made of extruded polystyrene board; the thickness of the insulation layer 3 is 20mm.

[0021] In practice, the extruded polystyrene boards are closely joined together, and the insulation layer 3 is used for downward heat insulation to reduce heat loss.

[0022] In this embodiment, the semiconductor heating layer 4 releases far-infrared spectral lines with a wavelength range of 4μm to 20μm that have a thermal effect; the thickness of the semiconductor heating layer 4 is 1mm.

[0023] In practical implementation, under the influence of an electric field, the outer electrons of the nanoscale semiconductor material in the semiconductor heating layer 4 absorb electrical energy and transition from the ground state to the excited state. When the unstable excited-state electrons fall back to the ground state, they release energy outward, releasing far-infrared spectral lines of a specific wavelength with thermal effects. The semiconductor heating layer 4 is fabricated into a transparent coating or thin film with a thickness of only micro-nanoscale through vacuum deposition. It can also be sputtered onto materials such as glass, ceramics, and fabrics through fabrication processes. It heats up instantly when electricity is applied, is clean and efficient, and can be precisely controlled in terms of temperature and energy consumption through an intelligent system.

[0024] In this embodiment, the protective layer 5 is a PE film; the thickness of the protective layer 5 is 0.13 mm.

[0025] In practice, the PE films overlap by 100mm, and the protective layer 5 is laid on top of the semiconductor heating layer 4 for physical protection and construction isolation.

[0026] In this embodiment, the buffer layer 6 is made of geotextile or cement blanket; the thickness of the buffer layer 6 is 5mm to 10mm.

[0027] In practice, the buffer layer 6 is used to prevent the fine aggregate in the upper layer from embedding into the lower heat insulation layer 3 or semiconductor heating layer 4, thus playing a buffering and protective role.

[0028] In this embodiment, the equipotential bonding layer 7 is a 150mm×150mm metal mesh, which is connected to the equipotential terminals of the building; the thickness of the equipotential bonding layer 7 is 3mm.

[0029] In practice, a metal mesh is laid on top of the semiconductor heating layer 4. The metal mesh is made of galvanized steel wire or copper wire to increase thermal conductivity.

[0030] In this embodiment, the adhesive layer 8 is made of cement mortar, and the thickness of the adhesive layer 8 is 25mm to 35mm.

[0031] In practice, the adhesive layer 8 is used to directly adhere the decorative surface layer 9.

[0032] In this embodiment, the thickness of the decorative surface layer 9 is 10mm to 12mm.

[0033] In practice, the decorative surface layer 9 is laid on the adhesive layer 8, using decorative materials with good thermal conductivity such as ceramic tiles, marble, or composite flooring specifically for underfloor heating.

[0034] In use, this invention involves first waterproofing and leveling the existing concrete floor slab 1 of the building. Then, on the concrete floor slab 1, layers are laid in sequence: an air-barrier layer 2, a heat insulation layer 3, a semiconductor heating layer 4, a protective layer 5, a buffer layer 6, an equipotential bonding layer 7, an adhesive layer 8, and a decorative surface layer 9. In the semiconductor heating layer 4, under the influence of an electric field, the outer electrons of the nanoscale semiconductor material absorb electrical energy and transition from the ground state to an excited state. When the unstable excited-state electrons fall back to the ground state, they release far-infrared spectral rays of a specific wavelength with a thermal effect, thus achieving indoor heating in the building.

[0035] The above description is merely a preferred embodiment of the present utility model and does not constitute any limitation on the present utility model. Any simple modifications, alterations, or equivalent structural changes made to the above embodiments based on the technical essence of the present utility model shall still fall within the protection scope of the present utility model.

Claims

1. A semiconductor heating floor composite structure for buildings, wherein the floor comprises the building's original concrete floor slab (1), characterized in that: The composite structure includes an air-barrier layer (2), a heat insulation layer (3), a semiconductor heating layer (4), a protective layer (5), a buffer layer (6), an equipotential mesh layer (7), an adhesive layer (8), and a decorative surface layer (9), which are sequentially arranged from the concrete floor slab layer (1) to the interior space of the building.

2. The semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The air barrier layer (2) is made of PE film; the thickness of the air barrier layer (2) is 0.13 mm.

3. A semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The insulation layer (3) is made of extruded polystyrene board; the thickness of the insulation layer (3) is 20mm.

4. A semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The semiconductor heating layer (4) releases far-infrared spectral lines with thermal effect in the wavelength range of 4μm to 20μm; the thickness of the semiconductor heating layer (4) is 1mm.

5. A semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The protective layer (5) is made of PE film; the thickness of the protective layer (5) is 0.13 mm.

6. A semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The buffer layer (6) is made of geotextile or cement blanket; the thickness of the buffer layer (6) is 5mm to 10mm.

7. A semiconductor heating floor-to-floor composite structure for buildings according to claim 1, characterized in that: The equipotential mesh layer (7) is made of a 150mm×150mm metal mesh, which is connected to the equipotential terminal of the building; the thickness of the equipotential mesh layer (7) is 3mm.

8. A semiconductor heating floor composite structure for buildings according to claim 1, characterized in that: The bonding layer (8) is made of cement mortar, and the thickness of the bonding layer (8) is 25mm to 35mm.

9. A semiconductor heating floor-to-floor composite structure for buildings according to claim 1, characterized in that: The thickness of the decorative surface layer (9) is 10mm to 12mm.

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