Silicon optical device
Patent Information
- Application Number
- CN202522035963.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-22
- Publication Date
- 2026-10-23
- Estimated Expiration
- 2035-09-22
AI Technical Summary
但该光模块的发射激光器芯片阵列未设置散热基板,使得激光器散热效果不佳,激光器容易损坏
[0019]由上述方案可见,将激光器发出的光经准直、汇聚后,精准耦合到硅光芯片的光波导中,以提高光的传输效率。
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Figure CN224888900U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the technical field of communication technology, specifically to a silicon photonic device. Background Technology
[0002] To meet the demand for high-speed, highly integrated optical signal processing in fields such as optical communication and data centers, silicon photonics devices have become the core development direction in the optoelectronic field. Silicon photonics devices typically include silicon photonics chip lasers, optical isolators, and lens units. The light emitted by the laser is transmitted to the silicon photonics chip through the lens unit, thereby realizing signal transmission.
[0003] Traditional silicon photonics devices with multiple lasers require eutectic bonding to mount the lasers onto a corresponding heat sink substrate. Then, a collimating lens, an isolator, and another collimating lens are sequentially coupled and installed along each laser's output direction. Finally, the laser output light is transmitted to the corresponding input port of the silicon photonics chip. This method uses separate lasers and separate lenses, resulting in very limited board space.
[0004] An optical module includes a circuit board, an emitting laser chip array, and a receiving detector chip array, the receiving detector chip array and the emitting laser chip array having different heights; an optical fiber array and a lens assembly are disposed on the surface of the circuit board, including: a body, an optical fiber lens array, a groove, a first reflective surface, a second reflective surface, and an emitting lens array consisting of multiple emitting lenses of the same specifications disposed at the bottom of the body; and a receiving lens array consisting of multiple receiving lenses of the same specifications disposed at the bottom of the body. However, the emitting laser chip array of this optical module lacks a heat dissipation substrate, resulting in poor heat dissipation of the laser and easy damage to the laser. Utility Model Content
[0005] The primary objective of this invention is to provide a silicon photonic device with improved packaging density.
[0006] To achieve the first objective of this utility model, the silicon photonics device provided by this utility model includes a circuit board; a heat dissipation substrate, a silicon photonics chip, an optical isolator, and a lens unit are disposed on the top of the circuit board, and multiple lasers are disposed on the top of the heat dissipation substrate; the lens unit includes a collimating lens array, a half-reflecting mirror, and a converging lens array, the collimating lens array and the converging lens array are arranged vertically, the first end of the collimating lens array is adjacent to the first end of the converging lens array, the second end of the collimating lens array is adjacent to the first end of the half-reflecting mirror, and the second end of the converging lens array is adjacent to the second end of the half-reflecting mirror; the collimating lens array is positioned facing the multiple lasers, the silicon photonics chip is positioned facing the converging lens array, and the optical isolator is disposed between the converging lens array and the silicon photonics chip.
[0007] As can be seen from the above scheme, multiple lasers are mounted on a single heat sink using flip-chip technology, and the heating surfaces of the lasers can be in close contact with the heat sink, making full use of the heat sink's space and heat dissipation capacity, thereby maximizing the space utilization of the circuit board and increasing packaging density. Furthermore, the collimating lens array, semi-reflective mirror, and converging lens array are integrated into a single lens unit using molding technology, further maximizing the space utilization of the circuit board and increasing packaging density. Because the semi-reflective mirror deflects the light path, it reduces the dimensional constraints of the circuit board in the width direction, thus maximizing the space utilization of the circuit board.
[0008] In a further design, the length of the collimating lens array is the same as the length of the converging lens array.
[0009] As can be seen, the length of the collimating lens array is the same as the length of the converging lens array, so that the length direction of the half-reflecting mirror and the collimating lens array forms a 45-degree angle with the length direction of the converging lens array, allowing the reflected light path of the laser to be transmitted perpendicularly to the silicon photonic chip.
[0010] In a further design, the silicon photonics chip has multiple optical waveguide input terminals, each corresponding to a laser.
[0011] In a further embodiment, the collimating lens array is provided with multiple collimating lenses, the converging lens array is provided with multiple converging lenses, one laser corresponds to one collimating lens, and one laser corresponds to one converging lens.
[0012] In a further embodiment, the laser, its corresponding collimating lens, its corresponding converging lens, and its corresponding optical waveguide input end are on the same reflected optical path.
[0013] Therefore, it can be seen that each laser can transmit laser light to the corresponding optical waveguide input terminal.
[0014] In a further embodiment, the circuit board is equipped with multiple monitoring detectors, each monitoring detector corresponding to a laser, and the laser and the monitoring detector corresponding to the laser are set on the same transmitted light path.
[0015] Therefore, the monitoring detector can monitor the laser intensity, thus preventing excessive laser intensity from burning out the silicon photonic chip. Furthermore, when the laser's performance deteriorates over time, leading to a decrease in output power, the monitoring detector's feedback mechanism can appropriately increase the laser's operating current to achieve a stable laser intensity.
[0016] In a further embodiment, the length direction of the heat dissipation substrate is perpendicular to the length direction of the silicon photonics chip.
[0017] Therefore, by making the length direction of the heat dissipation substrate perpendicular to the length direction of the silicon photonic chip, the reflected light path of the laser is made perpendicular, which allows the space of the circuit board to be fully utilized, thereby increasing the packaging density.
[0018] To achieve the second objective, the coupling method for silicon photonic devices provided by this utility model applies the aforementioned silicon photonic devices, mounts a laser on a heat dissipation substrate, couples the laser emitted by the laser to a collimating lens array, couples the laser to a converging lens array, couples the laser to the optical waveguide of the silicon photonic chip, acquires the laser intensity obtained by the monitoring detector, and adjusts the operating current of the laser according to the laser intensity.
[0019] As can be seen from the above scheme, the light emitted by the laser is collimated and focused, and then precisely coupled into the optical waveguide of the silicon photonic chip to improve the light transmission efficiency. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of the structure of an embodiment of the silicon photonics device of this utility model.
[0021] Figure 2 This is a schematic diagram of the laser and heat dissipation substrate of an embodiment of the silicon photonics device of this utility model.
[0022] Figure 3 This is a flowchart of the coupling method of the silicon photonics device in the embodiment of the present invention.
[0023] The present invention will be further described below with reference to the accompanying drawings and embodiments. Detailed Implementation
[0024] The silicon photonic device provided by this invention integrates a collimating lens array, a semi-reflective mirror, and a converging lens array into a single lens unit using molding technology. Multiple lasers are mounted on a heat dissipation substrate, thereby making full use of the space on the circuit board and increasing the packaging density.
[0025] Examples of silicon photonic devices: See Figure 1 The silicon photonics device includes a circuit board 25, and a heat sink 21 is disposed on top of the circuit board 25. Multiple lasers 22 are disposed on top of the heat sink 21. In this embodiment, the number of lasers 22 is four.
[0026] See Figure 2 Multiple lasers 22 are mounted on a heat dissipation substrate using a flip-chip process, so that the heating surface of the laser 22 is close to the heat dissipation substrate, improving the heat conduction efficiency and enabling the laser to be fully dissipated.
[0027] When multiple lasers 22 are disposed on the heat dissipation substrate 21, the spacing between the multiple lasers 22 is equal, and the spacing between lasers 22 is 250um~300um.
[0028] Above the circuit board 25, a silicon photonics chip 27, an optical isolator 26, and a lens unit 31 are also disposed. The lens unit 31 includes a collimating lens array 311, a half-reflecting mirror 313, and a converging lens array 312. The collimating lens array 311 and the converging lens array 312 are arranged vertically. The first end of the collimating lens array 311 is adjacent to the first end of the converging lens array 312, and the second end of the collimating lens array 311 is adjacent to the first end of the half-reflecting mirror 313. The second end of the converging lens array 312 is adjacent to the second end of the half-reflecting mirror 313. The collimating lens array 311 is positioned directly opposite the plurality of lasers 22, and the length of the collimating lens array 311 is parallel to the arrangement length of the plurality of lasers 22. The length direction of the heat dissipation substrate 21 is perpendicular to the length direction of the silicon photonics chip 27.
[0029] The collimating lens array 311, the semi-reflecting mirror 313, and the converging lens array 312 are integrated into a single lens unit using molding technology. The lens unit 31 can be made of fused silica or silicon. The integrated design of the lens unit 31 allows for full utilization of the space on the circuit board 25, thereby increasing the packaging density.
[0030] Specifically, the length of the collimating lens array 311 is the same as the length of the converging lens array 312, so that the semi-reflecting mirror 313 forms a 45-degree angle with the length direction of the collimating lens array 311 and the length direction of the converging lens array 312, so that the reflected light path of the laser 22 can be transmitted vertically to the silicon photonic chip.
[0031] Specifically, the collimating lens array 311 is provided with multiple collimating lenses 3111, and the converging lens array 312 is provided with multiple converging lenses 3121. One laser 22 corresponds to one collimating lens 3111, and one laser 22 corresponds to one converging lens 3121. The spacing between collimating lenses 3111 is equal, and the spacing between collimating lenses 3111 is equal to the spacing between lasers 22.
[0032] The spacing between converging lenses 3121 is equal, and the spacing between converging lenses 3121 is equal to the spacing between lasers 22.
[0033] The silicon photonic chip 27 is positioned directly opposite the converging lens array 312, which is parallel to the length of the silicon photonic chip. The silicon photonic chip 27 has multiple optical waveguide input terminals 271, each corresponding to a laser 22. The spacing between each optical waveguide input terminal 271 is equal, and the spacing between any two optical waveguide input terminals 271 is equal to the spacing between any two lasers 22.
[0034] Optical isolator 26 is disposed between converging lens array 312 and silicon photonic chip 27.
[0035] After the laser 22 emits a laser beam, the laser beam passes through the collimating lens array 311, is reflected by the semi-reflecting mirror to the converging lens array 312, passes through the optical isolator, and reaches the optical waveguide input terminal 271.
[0036] The circuit board 25 is also equipped with multiple monitoring detectors 24, each monitoring detector 24 corresponding to a laser 22. The laser 22 and its corresponding monitoring detector 24 are arranged on the same transmitted light path. The spacing between monitoring detectors 24 is equal, and the spacing between monitoring detectors 24 is equal to the spacing between lasers 22.
[0037] After the laser emitted by the laser 22 passes through the collimating lens array 311, it reaches the semi-reflecting mirror 313. The semi-reflecting mirror 313 transmits part of the laser to the monitoring detector 24. The monitoring detector can monitor the laser intensity of the laser 22 and adjust the operating current of the laser 22 through the feedback mechanism of the monitoring detector 24 to further regulate the laser intensity of the laser 22.
[0038] See Figure 3 The coupling method of silicon photonic devices uses silicon photonic devices. Before coupling the silicon photonic devices, step S1 is performed first to mount the laser 22 on the heat sink substrate 21. Multiple lasers 22 are mounted on a heat sink substrate using flip-chip technology.
[0039] After the laser 22 is mounted on the heat dissipation substrate 21, step S2 is performed to couple the laser emitted by the laser 22 to the collimating lens array 311.
[0040] After the laser emitted by the laser 22 is coupled to the collimating lens array 311, step S3 is executed to couple the laser to the converging lens array 312.
[0041] After the laser is coupled to the converging lens array 312, step S4 is executed to couple the laser to the optical waveguide of the silicon photonic chip 27. The optical waveguide input terminal 271 is the entrance to the optical waveguide of the silicon photonic chip 27.
[0042] The light emitted by the laser is collimated and focused before being precisely injected into the optical waveguide of the silicon photonics chip, which greatly improves the light transmission efficiency and ensures that the optical signal can smoothly enter the silicon photonics chip for subsequent processing.
[0043] After the laser is coupled to the optical waveguide of the silicon photonic chip 27, step S5 is executed to obtain the laser intensity from the monitoring detector, and the operating current of the laser is adjusted according to the laser intensity. The monitoring detector can monitor the laser intensity of the laser, thereby preventing the silicon photonic chip from being burned out due to excessive laser intensity.
[0044] The above is only a preferred embodiment of the present utility model, but the design concept of the utility model is not limited thereto. Without departing from the concept of the present utility model, more other equivalent embodiments may be included. Those skilled in the art can make various obvious changes, readjustments and substitutions without departing from the protection scope of the present utility model.
Claims
1. Silicon photonics devices, including circuit boards; Its features are: A heat dissipation substrate, a silicon photonics chip, an optical isolator, and a lens unit are disposed on the top of the circuit board, and multiple lasers are disposed on the top of the heat dissipation substrate; The lens unit includes a collimating lens array, a semi-reflecting mirror, and a converging lens array. The collimating lens array and the converging lens array are arranged perpendicularly. The first end of the collimating lens array is adjacent to the first end of the converging lens array, the second end of the collimating lens array is adjacent to the first end of the semi-reflecting mirror, and the second end of the converging lens array is adjacent to the second end of the semi-reflecting mirror. The collimating lens array is positioned facing the plurality of lasers, and the silicon photonic chip is positioned facing the converging lens array; The optical isolator is positioned between the converging lens array and the silicon photonic chip.
2. The silicon photonic device according to claim 1, characterized in that: The length of the collimating lens array is the same as the length of the converging lens array.
3. The silicon photonic device according to claim 2, characterized in that: The silicon photonics chip is provided with multiple optical waveguide input terminals, and each optical waveguide input terminal corresponds to a laser.
4. The silicon photonic device according to claim 3, characterized in that: The collimating lens array is provided with multiple collimating lenses, and the converging lens array is provided with multiple converging lenses. One laser corresponds to one collimating lens, and one laser corresponds to one converging lens.
5. The silicon photonic device according to claim 4, characterized in that: The laser, its corresponding collimating lens, its corresponding converging lens, and its corresponding optical waveguide input end are on the same reflected optical path.
6. The silicon photonic device according to any one of claims 1 to 5, characterized in that: The circuit board is also equipped with multiple monitoring detectors, one monitoring detector corresponds to one laser, and one laser and its corresponding monitoring detector are arranged on the same transmission optical path.
7. The silicon photonic device according to any one of claims 1 to 5, characterized in that: The length direction of the heat dissipation substrate is perpendicular to the length direction of the silicon photonic chip.