Surface acoustic wave resonator with suppression of transverse acoustic wave leakage

Abstract

The utility model relates to a surface acoustic wave resonator for inhibiting transverse acoustic wave leakage, in particular to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital transducer structure capable of reducing transverse acoustic wave energy leakage. The utility model relates to an interdigital trans

Description

Technical Field

[0001] This utility model relates to the field of surface acoustic wave resonator technology, specifically to an interdigital transducer structure capable of suppressing transverse acoustic wave energy leakage. Background Technology

[0002] Many functions of modern smart terminals rely on wireless communication, and their wireless transceivers typically include multiple surface acoustic wave (SAW) filters to filter signals at specific frequencies or frequency ranges. With the development of 5G technology, the number of frequency bands supported by wireless communication devices has increased. To improve communication quality and reduce interference between frequency bands, the requirements for radio frequency devices such as filters and duplexers are becoming increasingly stringent. In recent years, thin-film surface acoustic wave (FSAW) filters have received widespread attention due to their advantages such as high quality factor (Q value), low temperature drift coefficient, large bandwidth, and high power capacity.

[0003] In FSAW resonators and filters, the presence of transverse modes or other stray resonant modes can cause a dip in the filter's passband transmission signal, severely impacting filter performance. To address this issue, thickened or enlarged edge regions are typically added at both ends of the aperture to reduce the sound velocity and excite the Piston mode; this is a common transverse mode suppression method. However, the thickened or enlarged edge region electrodes in the Piston mode resonator can cause sound wave scattering, leading to energy leakage along the transverse direction and thus reducing the resonator's Q value.

[0004] Figure 1 This diagram illustrates the structure of an interdigital transducer for an FSAW resonator on a POI (LT / SiO2 / Si, lithium tantalum / silicon dioxide / silicon) substrate 1, and the sound velocity distribution in each region. It includes two sets of interleaved first electrode strips 31 and 32, a first end busbar 310, a second end busbar 320, a first middle busbar 311, a second middle busbar 321, a first electrode finger strip 312, and a second electrode finger strip 322. Furthermore, it defines sound velocity adjustment regions 332 and 333, a mid-sound gap region 330 and 331, a side sound gap region 334 and 335, sound velocity adjustment regions 332 and 333, and an acoustic aperture region 336. The figure shows the distribution of horizontal shear wave and Rayleigh wave sound velocities in different regions of the resonator. The working sound wave mode of the resonator is horizontal shear wave. The sound velocity in the sound velocity adjustment region is lower than that in the sound aperture region and also lower than that in the middle sound gap region. Moreover, the horizontal shear wave sound velocity in each region is greater than that in the Rayleigh wave region.

[0005] Figure 2 for Figure 1 The surface acoustic wave resonator structure includes a sound velocity adjustment region and a sound aperture region.

[0006] The horizontal shear waves and Rayleigh waves in the mid-sound gap and side-sound gap regions vary with the transverse wavenumber k.y The dispersion curves are shown. Due to the high sound velocity of the horizontal shear waves in the mid-sound gap and side-sound gap regions, the horizontal shear waves excited in the acoustic aperture region and sound velocity modulation region are evanescent in these gap regions at the resonant frequency. However, through scattering at the interface between the sound velocity modulation region and the mid-sound gap region, the horizontal shear waves in the sound velocity modulation region may be transformed into Rayleigh waves with a larger transverse wavenumber and pass through the mid-sound gap region. This is the main pathway for transverse sound wave energy leakage.

[0007] Figure 3 The finite element simulation was used to demonstrate Figure 1 The three-dimensional deformation diagram of the surface acoustic wave resonator structure on the xoy section is shown in the figure. The figure clearly shows the process by which the horizontal shear wave is converted into a Rayleigh wave at the interface between the sound velocity adjustment region and the middle acoustic gap region, and then leaks through the side acoustic gap region to the end busbar.

[0008] Besides the Piston mode, other methods for suppressing transverse modes, such as tilted electrodes, apodization structures, and etched grooves, either require complex fabrication steps or also sacrifice Q-value. Therefore, how to maintain a high Q-value of the resonator while suppressing transverse modes is an urgent problem to be solved. Utility Model Content

[0009] In view of the shortcomings of the prior art described above, the present invention provides a surface acoustic wave resonator structure for suppressing transverse acoustic wave leakage of the Piston mode resonator, which solves the problem of Q value decrease after suppressing the transverse mode of the surface acoustic wave resonator in the prior art.

[0010] To achieve the above objectives, this utility model provides a surface acoustic wave resonator for suppressing transverse acoustic wave leakage, comprising: a substrate 1, a piezoelectric thin film 2 disposed on one side of the surface of the substrate 1, and an interdigital transducer 3 disposed on one side of the surface of the piezoelectric thin film 2; the interdigital transducer 3 is composed of two sets of cross-arranged first electrode strip groups 31 and second electrode strip groups 32; the first electrode strip group 31 and the second electrode strip group 32 respectively include a first end busbar 310, a second end busbar 320, a first middle busbar 311, and a second middle busbar 321. A first electrode finger strip 312 and a second electrode finger strip 322 are arranged at more than one spacing perpendicular to one side of the first end busbar 310 and the second end busbar 320, respectively; the first middle busbar 311 and the second middle busbar 321 pass through the first electrode finger strip 312 and the second electrode finger strip 322, respectively, and are arranged parallel to the first end busbar 310 and the second end busbar 320; the first end busbar 310, the first middle busbar 311, and the first electrode finger strip 312 are electrically connected to each other; the second end busbar 320, the second middle busbar 321, and the second electrode finger strip 322 are electrically connected to each other; a gap is provided between the front end of the first electrode finger strip 312 and the second middle busbar 321, and between the front end of the second electrode finger strip 322 and the first middle busbar 311, respectively, and the adjacent gaps respectively form the first mid-sound gap region 330 and the second mid-sound gap region 331; the front section 3120 of the first electrode finger strip 312 and its... The middle sections 3221 of adjacent second electrode fingers 322 are spaced apart and adjacent to the middle section 3121 of the adjacent first electrode fingers 312, forming a first sound velocity adjustment zone 332 and a second sound velocity adjustment zone 333 respectively; an acoustic aperture zone 336 is formed between the first sound velocity adjustment zone 32 and the second sound velocity adjustment zone 333; the spaces between the first end busbar 310 and the first middle busbar 311, and between the second end busbar 320 and the second middle busbar 321 respectively form a first side acoustic gap zone 334 and a second side acoustic gap zone 335; characterized in that the first side acoustic gap zone 334 and the second side acoustic gap zone 335 are respectively provided with a first tilted electrode array 340 and a second tilted electrode array 341; the distance between them is the same and is λ; the distance between the second electrode fingers 322 connected to the second end busbar 320 and the second middle busbar 321 is the same and is λ.

[0011] Furthermore, in the aforementioned surface acoustic wave resonator for suppressing transverse acoustic wave leakage, the first tilted electrode array 340 and the second tilted electrode array 341 are angled tilted electrode arrays, with the sum of the tilt angles θ4 and θ5 of the folded edges being 180°, and the ranges of the tilt angles θ4 and θ5 of the folded edges being 10°--80° and 100°--170°, respectively.

[0012] Furthermore, in the aforementioned surface acoustic wave resonator for suppressing transverse acoustic wave leakage, the first tilted electrode array 340 and the second tilted electrode array 341 are grid-shaped tilted electrode arrays, which are grid-shaped structures formed by two strip-shaped tilted electrode arrays with tilt angles of θ6 and θ7, wherein the sum of θ6 and θ7 is 180°, and the tilt angles θ6 and θ7 range from 10° to 80° and from 100° to 170°.

[0013] Furthermore, in the aforementioned surface acoustic wave resonator for suppressing transverse acoustic wave leakage, the first tilted electrode array 340 and the second tilted electrode array 341 are rhomboid patterned tilted electrode arrays. The two sides of the rhomboid unit form angles θ8 and θ9 with the y-direction, respectively, where the sum of θ8 and θ9 is 180°. The tilt angles θ8 and θ9 are set to range from 10° to 80° and from 100° to 170°.

[0014] Furthermore, the surface acoustic wave resonator for suppressing transverse acoustic wave leakage has a λ greater than 0.8λ and less than 1.2λ, with an optimal λ of 1.0λ; the width in the vertical alignment direction should be greater than 0.5λ and less than 5λ.

[0015] Furthermore, in the aforementioned surface acoustic wave resonator for suppressing transverse acoustic wave leakage, the metal duty cycle of the first tilted electrode array 340 and the second tilted electrode array 341 is one or more between 0.2 and 0.8.

[0016] Furthermore, in the aforementioned surface acoustic wave resonator for suppressing transverse acoustic wave leakage, the first tilted electrode array 340 and the second tilted electrode array 341 share the same metal layer with the first electrode finger strip 312 and the second electrode finger strip 322, respectively, or selectively change the film thickness and duty cycle in some areas, or add additional film layers.

[0017] Add an additional membrane layer.

[0018] The beneficial effects of this invention are: by introducing a specially designed tilted electrode array in the side acoustic gap region, it can effectively reflect the transverse acoustic waves generated by the scattering of the sound velocity adjustment region, thereby significantly suppressing the transverse acoustic wave energy leakage caused by the Piston mode structure, ultimately improving the Q value of the resonator, and having minimal impact on the main acoustic wave mode. Attached Figure Description

[0019] Figure 1 A schematic diagram of the interdigital transducer structure of the FSAW resonator on a POI substrate in the prior art, and a schematic diagram of the sound velocity distribution in each region;

[0020] Figure 2 The horizontal shear wave in the existing sound velocity modulation region and the Rayleigh wave in the first gap region vary with the transverse wavenumber k. y The dispersion curve;

[0021] Figure 3 For existing technology Figure 1 Finite element simulation deformation diagram of the xoy section of the structure;

[0022] Figure 4 This is a schematic cross-sectional view of a surface acoustic wave (SAW) device in the prior art.

[0023] Figure 5 This is a schematic diagram of the structure of the present invention, in which the two tilted electrode arrays are arranged in opposite directions;

[0024] Figure 6 This is a schematic diagram of the structure of the present invention, in which the two tilted electrode arrays are arranged in the same direction.

[0025] Figure 7 This is a schematic diagram of the structure of the present invention, in which the two tilted electrode arrays are arranged at an angle.

[0026] Figure 8 This is a schematic diagram of the structure of the present invention, in which two tilted electrode arrays are arranged in a grid pattern.

[0027] Figure 9 This is a schematic diagram of the structure of the present invention, in which the two tilted electrode arrays are arranged in a rhomboid pattern.

[0028] Figure 10 for Figure 5 A schematic diagram showing the variation of the resonant frequency Q value of the simulated surface acoustic wave device with the angle between the tilted electrode array and the y-direction.

[0029] Figure 11 for Figure 1 , Figure 5 and Figure 9 Simulation comparison of the conductivity curves of the interdigital transducer structure surface acoustic wave device.

[0030] Figure 12 for Figure 1 , Figure 5 and Figure 9 Simulation comparison of Q-values ​​of the interdigital transducer structure surface acoustic wave device.

[0031] The components include: substrate 1, piezoelectric thin film 2, interdigital transducer 3, first electrode strip group 31, second electrode strip group 32, first end busbar 310, second end busbar 320, first middle busbar 311, second middle busbar 321, first electrode finger 312, second electrode finger 322, first middle acoustic gap region 330, second middle acoustic gap region 331, front section 3120 of first electrode finger 312, middle section 3221 of second electrode finger 322, front section 3220 of second electrode finger 322, middle section 3121 of first electrode finger 312, first sound velocity adjustment region 332, second sound velocity adjustment region 333, first side acoustic gap region 334, second side acoustic gap region 335, first tilted electrode array 340, second tilted electrode array 341, and acoustic aperture region 336. Detailed Implementation

[0032] The following specific examples illustrate the implementation of this utility model. The structures, proportions, sizes, etc. mentioned are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the conditions under which this application can be implemented. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0033] This embodiment provides a surface acoustic wave device structure, such as Figure 4 As shown, the resonator includes:

[0034] The piezoelectric thin film 2 is made of lithium tantalate or lithium niobate.

[0035] Interdigital transducer 3 is disposed on one side surface of piezoelectric film 2, and the material can be one, multiple layers or alloy of metals such as aluminum, copper, titanium, gold, and platinum.

[0036] like Figure 5 As shown, the interdigital transducer 3 includes:

[0037] The first end busbar 310, the first middle busbar 311, the second end busbar 320, and the second middle busbar 321 are arranged in parallel along the x-direction and along the y-direction.

[0038] A first electrode finger strip 312 and a second electrode finger strip 322 are arranged, wherein the length of the first electrode finger strip 312 is along the y-direction, with one end passing through the first middle busbar 311 and connected to the first end busbar 310. The length of the second electrode finger strip 322 is along the y-direction, with one end passing through the second middle busbar 321 and connected to the second end busbar 320. The first electrode finger strip 312 and the second electrode finger strip 322 are arranged parallel to each other and intersecting at intervals along the x-direction, and the overlapping area of ​​adjacent first electrode finger strips 312 and second electrode finger strips 322 in the x-direction constitutes an acoustic aperture region 336. The center of the first electrode finger strip 312 and the adjacent second electrode finger strip 322 is λ / 2.

[0039] An additional metal layer is formed on the corresponding areas of the first electrode strip group 31 and the second electrode strip group 32, namely the front section 3120 of the first electrode finger strip 312, the middle section 3221 of the second electrode finger strip 322, the front section 3220 of the second electrode finger strip 322, and the middle section 3121 of the first electrode finger strip 312. The material can be one, multiple, or an alloy of metals such as aluminum, copper, titanium, gold, and platinum.

[0040] The first intermediate acoustic gap region 330 and the second intermediate acoustic gap region 331 are wherein the first intermediate acoustic gap region 330 is composed of the gap between the end of the second electrode finger strip 322 and the first middle busbar 311 and the corresponding part of the adjacent first electrode finger strip 312 in the x direction, and the second intermediate acoustic gap region 331 is composed of the gap between the end of the first electrode finger strip 312 and the second middle busbar 321 and the corresponding part of the adjacent second electrode finger strip 322 in the x direction.

[0041] Figure 5 The first inclined electrode array 340 and the second inclined electrode array 341 are located between the first middle busbar 311 and the first end busbar 310, arranged parallel to each other along the x-direction and at an angle θ1 with the y-direction. The second inclined electrode array 341 is located between the second middle busbar 321 and the second end busbar 320, arranged parallel to each other along the x-direction and at an angle θ2 with the y-direction, where θ2 = 180° - θ1. Since the first sound velocity adjustment region 331 and the second sound velocity adjustment region 332 scatter the working sound wave mode into other modes with higher transverse wavenumbers (e.g., horizontal shear waves are converted into Rayleigh waves), the purpose of the inclined electrode array is to reflect the scattered sound waves formed, thus reducing transverse energy leakage and improving the Q value of the resonator.

[0042] Figure 6This represents another strip-shaped tilted electrode array design, wherein the first tilted electrode array 340 and the second tilted electrode array 341, located between the first middle busbar 311 and the first end busbar 310, and between the second middle busbar 321 and the second end busbar 320, both make angles θ3 with the y-direction, achieving the same effect as... Figure 5 The interdigitated electrode structure of the surface acoustic wave device is close to each other. The acoustic waves in the resonator propagate bidirectionally along the +x and -x directions in the acoustic aperture region 336. Therefore, the acoustic waves scattered in the first acoustic modulation region 332 and the first acoustic modulation region 333 also propagate bidirectionally along the +x and -x directions, and have -y and +y wave vector components in the regions of the strip-shaped first tilted electrode array 340 and the second tilted electrode array 341, respectively. Figure 5 and Figure 6 The first tilted electrode array 340 or the second tilted electrode array 341 of the interdigitated electrode structure shown contains only one tilt angle, so it can suppress scattered sound waves in one direction respectively, but some scattered sound waves still leak in the lateral direction.

[0043] Figure 7 The structure of two tilted electrode arrays with angled settings is shown. The first tilted electrode array 340 and the second tilted electrode array 341 have two tilt angles with the y direction, θ4 and θ5, where θ5 = 180° - θ4. Therefore, it can suppress bidirectional leakage of scattered sound waves and further improve the Q value of the resonator.

[0044] Figure 8 The diagram illustrates a grid-like structure for the first tilted electrode array 340 and the second tilted electrode array 341. This grid structure is formed by two strip-shaped tilted electrode arrays with tilt angles of θ6 and θ7, where θ7 = 180° - θ6. Compared to the grid-like first tilted electrode array 340 and second tilted electrode array 341... Figure 7 The first tilted electrode array 340 and the second tilted electrode array 341, which are set at an angle, occupy less lateral space.

[0045] Figure 9 The diagram illustrates a structure with two first tilted electrode arrays 340 and 341 arranged in a rhomboid pattern, consisting of an array of periodic rhomboid units. The two sides of each rhomboid unit form angles θ8 and θ9 with the y-direction, where θ9 = 180° - θ8. The center-to-center distance between the rhomboid units along the x-direction is λ, and the center-to-center distance along the y-direction is λtan(θ8).

[0046] Figure 10 Showing Figure 5The Q-value of the surface acoustic wave (SAW) device with the interdigitated electrode structure combined with the POI substrate varies with the tilt angle θ of the first and second tilted electrode arrays 340 and 341 at the resonant frequency. It can be seen that when the tilt angle decreases from 60° to 41°, the resonator Q-value increases from 1500 to 2336, and decreases further as the angle decreases. This means that the tilted electrode array has the optimal reflection effect on scattered sound waves at a tilt angle of 41°. It is worth noting that the optimal angle is only the result obtained under a specific structural system; the optimal tilt angle varies under different materials, acoustic modes, film thicknesses, and other factors.

[0047] Figure 11 and Figure 12 They represent Figure 1 , Figure 5 and Figure 9 The simulation results of the conductivity curve and Q value of the surface acoustic wave device with interdigitated electrode structure are shown in the figure. As can be seen from the figure, the first tilted electrode array 340 and the second tilted electrode array 341 with tilted strip and rhomboid pattern provided in this embodiment have little effect on the Piston mode resonance of the acoustic aperture region 336. They can improve the conductivity characteristics near the resonant frequency by suppressing transversely scattered acoustic wave leakage and significantly improve the Q value of the resonator.

[0048] Specifically, to better reduce the leakage of scattered acoustic waves, the width of the first tilted electrode array 340 and the second tilted electrode array 341 along the y-direction should be greater than 0.5λ. Meanwhile, considering the area occupied by the resonator and the electrode resistance, the width of the tilted electrode array region along the y-direction should be less than 5λ. As an example, in this embodiment, the width of the first tilted electrode array 340 and the second tilted electrode array 341 region along the y-direction is 3λ.

[0049] Specifically, in order to better reduce the leakage of scattered sound waves, the spacing between the tilted electrode arrays arranged along the x-direction should be greater than 0.8λ and less than 1.2λ. As an example, in this embodiment, the spacing between the first tilted electrode array 340 and the second tilted electrode array 341 arranged along the x-direction is λ.

[0050] Specifically, in order to better reduce the leakage of scattered sound waves, the angles between the first tilted electrode array 340 and the second tilted electrode array 341 and the y-direction should be set between [10°, 80°] and [1°, 170°]. As an example, the tilted electrode arrays used in this embodiment have angles of 41° and 149° with the y-direction.

[0051] Specifically, to better reduce the leakage of scattered acoustic waves, the film thickness of the tilted electrode array should be 0.05λ - 0.2λ. As an example, the tilted electrode array used in this embodiment has a film thickness of 0.09λ.

[0052] Specifically, to better reduce the leakage of scattered sound waves, the duty cycles of the first tilted electrode array 340 and the second tilted electrode array 341 should be adjusted, with an adjustment range of 0.2-0.8. For example, the duty cycles of the strip-shaped and diamond-patterned tilted electrode arrays can be appropriately increased, and the duty cycles of the intersection and independent regions of the grid-shaped tilted electrode array can be selectively increased or decreased. As an example, this embodiment uses... Figure 5 The duty cycle of the tilted electrode array of the surface acoustic wave device is 0.5. This embodiment uses... Figure 9 The duty cycle of the tilted electrode array of the surface acoustic wave device is 0.7.

[0053] It is worth noting that this embodiment uses a POI substrate for bonding. Figures 5 to 9 The interdigital transducer is discussed, wherein the acoustic wave operating mode is a horizontal shear wave, and the scattered acoustic wave mode is a Rayleigh wave. It is foreseeable that for other operating modes, such as longitudinal leakage waves operating on an LN / SiC substrate, the first tilted electrode array 340 and the second tilted electrode array 341 structure provided by this invention will still have the effect of reducing scattered acoustic wave leakage and improving the resonator Q value.

[0054] In summary, the filter and surface acoustic wave device of this invention improve the structure of the surface acoustic wave device by setting strip-shaped, angled, grid-shaped and rhomboid patterned tilted electrode array structures in the busbar region to reflect the sound waves scattered in the sound velocity adjustment zone, thereby effectively reducing sound wave energy leakage and improving the Q value of the resonator.

Claims

1. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage, comprising: A substrate (1), a piezoelectric thin film (2) disposed on one side of the surface of the substrate (1), and an interdigital transducer (3) disposed on one side of the surface of the piezoelectric thin film (2); the interdigital transducer (3) is composed of two sets of cross-arranged first electrode strip groups (31) and second electrode strip groups (32); the first electrode strip groups (31) and second electrode strip groups (32) respectively include a first end busbar (310) and a second end busbar (320), a first middle busbar (311) and a second middle busbar (321) respectively, and first electrode fingers (312) and second electrode fingers (322) arranged at more than one spacing perpendicular to one side of the first end busbar (310) and the second end busbar (320); the first middle busbar (311) 11) and the second middle busbar (321) pass through the first electrode finger (312) and the second electrode finger (322) respectively, and are arranged parallel to the first end busbar (310) and the second end busbar (320); the first end busbar (310), the first middle busbar (311), and the first electrode finger (312) are electrically connected to each other; the second end busbar (320), the second middle busbar (321), and the second electrode finger (322) are electrically connected to each other; a gap is provided between the front end of the first electrode finger (312) and the second middle busbar (321), and between the front end of the second electrode finger (322) and the first middle busbar (311), and adjacent gaps respectively form the first mid-sound gap region (330). The first electrode finger (312) front section (3120) is adjacent to the middle section (3221) of its adjacent second electrode finger (322), and the second electrode finger (322) front section (3220) is adjacent to the middle section (3121) of its adjacent first electrode finger (312), forming the first sound velocity adjustment zone (332) and the second sound velocity adjustment zone (333) respectively; the acoustic aperture zone (336) is formed between the first sound velocity adjustment zone (332) and the second sound velocity adjustment zone (333); the spaces between the first end busbar (310) and the first middle busbar (311), and between the second end busbar (320) and the second middle busbar (321) respectively. The system comprises a first side acoustic gap region (334) and a second side acoustic gap region (335); characterized in that the first side acoustic gap region (334) and the second side acoustic gap region (335) are respectively provided with a first tilted electrode array (340) and a second tilted electrode array (341); the arrangement direction of the first electrode finger strip (312) and the second electrode finger strip (322) is defined as the x-direction, and the length direction of the first electrode finger strip (312) and the second electrode finger strip (322) is defined as the y-direction; along the x-direction, the distance between any two adjacent finger strips is the same and is λ / 2; the distance between the first electrode finger strips (312) connected to the first end busbar (310) and the first middle busbar (311) is the same and is λ;The distances between the second electrode fingers (322) connected to the second end busbar (320) and the second middle busbar (321) are the same and are all λ.

2. The surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The first tilted electrode array (340) and the second tilted electrode array (341) have tilt angles θ1 and θ2, respectively, wherein the sum of θ1 and θ2 is 180°, and the tilt angles θ1 and θ2 range from 10° to 80° and from 100° to 170°, respectively.

3. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The first tilted electrode array (340) and the second tilted electrode array (341) have the same tilt angle θ3, ranging from 10° to 80° and from 100° to 170°, respectively.

4. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The first tilted electrode array (340) and the second tilted electrode array (341) are angled tilted electrode arrays with a sum of tilt angles θ4 and θ5 of 180°. The tilt angles θ4 and θ5 of the folded edges range from 10° to 80° and from 100° to 170°, respectively.

5. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The arrangement direction of the first tilted electrode array (340) and the second tilted electrode array (341) is consistent with the arrangement direction of the first electrode finger strip (312) and the second electrode finger strip (322). The distance between adjacent electrodes in the first tilted electrode array (340) and the second tilted electrode array (341) is greater than 0.8λ and less than 1.2λ, with an optimal value of 1.0λ. The width in the vertical arrangement direction should be greater than 0.5λ and less than 5λ.

6. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The metal duty cycle of the first tilted electrode array (340) and the second tilted electrode array (341) is one or more between 0.2 and 0.

8.

7. A surface acoustic wave resonator for suppressing transverse acoustic wave leakage according to claim 1, characterized in that, The first tilted electrode array (340) and the second tilted electrode array (341) share the same metal layer with the first electrode finger strip (312) and the second electrode finger strip (322), respectively, or selectively change the film thickness and duty cycle of some areas, or add additional film layers.

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