Parallel igbt drive circuit

Abstract

The utility model provides a kind of parallel IGBT drive circuit, belong to IGBT technical field, comprising: power module;Drive module, the power supply end of drive module is connected the output end of power module, the output end of drive module is connected respectively the gate of first IGBT and the gate of second IGBT in parallel IGBT;First resistance module, first resistance module is connected between the emitter of first IGBT and the ground end of power module;Second resistance module, second resistance module is connected between the emitter of second IGBT and the ground end of power module;Wherein, the resistance of first resistance module and second resistance module is same.The utility model is used to inhibit the dynamic unbalanced flow of parallel IGBT.

Description

Technical Field

[0001] This utility model relates to the field of IGBT technology, and in particular to a parallel IGBT drive circuit. Background Technology

[0002] In power electronic systems, parallel IGBTs (Insulated Gate Bipolar Transistors) are commonly used to increase current capacity. Due to differences in manufacturing processes, the on-resistances of the two IGBTs in parallel connection differ, resulting in a high degree of dynamic current unevenness. Utility Model Content

[0003] This invention provides a parallel IGBT drive circuit to solve the technical problem of high uneven current in parallel IGBTs in the prior art.

[0004] This utility model provides a parallel IGBT drive circuit, including: Power module; A drive module, wherein the power supply terminal of the drive module is connected to the output terminal of the power supply module, and the output terminal of the drive module is respectively connected to the gate of the first IGBT and the gate of the second IGBT in the parallel IGBT; The first resistor module is connected in series between the emitter of the first IGBT and the ground terminal of the power supply module. The second resistor module is connected in series between the emitter of the second IGBT and the ground terminal of the power supply module. The first resistor module and the second resistor module have the same resistance value.

[0005] According to the parallel IGBT driving circuit provided by this utility model, the first resistor module includes a resistor RZ1, which is connected in series between the emitter of the first IGBT and the ground terminal of the power supply module.

[0006] According to the parallel IGBT driving circuit provided by this utility model, the second resistor module includes a resistor RZ2, which is connected in series between the emitter of the second IGBT and the ground terminal of the power supply module.

[0007] According to the parallel IGBT drive circuit provided by this utility model, the power supply module includes a self-oscillating half-bridge driver, a MOS tube half-bridge circuit, an isolation transformer, and a rectifier bridge; The self-oscillating half-bridge driver is connected to the AC input terminal of the rectifier bridge via the MOS transistor half-bridge circuit and the isolation transformer in sequence, and the DC output terminal of the rectifier bridge is connected to the power supply terminal of the drive module.

[0008] According to the parallel IGBT drive circuit provided by this utility model, the self-oscillating half-bridge driver, the MOS tube half-bridge circuit and the rectifier bridge are respectively model IRS2153DSTRPBF, IRF7103TR and GBU808.

[0009] According to the parallel IGBT driving circuit provided by this utility model, the driving module includes a first driving circuit, a first transistor push-pull circuit, a second driving circuit, and a second transistor push-pull circuit. The power supply terminal of the first driving circuit is connected to the output terminal of the power module, the output terminal of the first driving circuit is connected to the input terminal of the first transistor push-pull circuit, and the output terminal of the first transistor push-pull circuit is connected to the gate of the first IGBT. The power supply terminal of the second driving circuit is connected to the output terminal of the power module, the output terminal of the second driving circuit is connected to the input terminal of the second transistor push-pull circuit, and the output terminal of the second transistor push-pull circuit is connected to the gate of the second IGBT.

[0010] According to the parallel IGBT driving circuit provided by this utility model, both the first driving circuit and the second driving circuit are isolated gate drivers.

[0011] According to the parallel IGBT drive circuit provided by this utility model, the isolated gate driver is model NSI6651ASC-DSWR.

[0012] According to the parallel IGBT driving circuit provided by this utility model, the two transistors in the first transistor push-pull circuit or the second transistor push-pull circuit are MJD45H11G and MJD44H11G, respectively.

[0013] According to the parallel IGBT driving circuit provided by this utility model, the driving module further includes a controller, which is connected to the input terminal of the first driving circuit and the input terminal of the second driving circuit respectively. The controller is used to output interlock driving signals to the first driving circuit and the second driving circuit.

[0014] The parallel IGBT driving circuit provided by this utility model can dynamically adjust the conduction voltage of the two IGBTs through the voltage difference of the first resistor module or the second resistor module, and compensate for the mismatch of the conduction impedance of the two IGBTs. If the transient current of one IGBT suddenly increases during switching, the voltage drop across its emitter resistor module increases, which effectively raises the conduction threshold of the IGBT and forces the current to be diverted to the other IGBT, thereby suppressing the dynamic uneven current of the parallel IGBTs. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0016] Figure 1 This is one of the structural schematic diagrams of the parallel IGBT drive circuit provided by this utility model.

[0017] Figure 2 This is the second schematic diagram of the parallel IGBT drive circuit provided by this utility model.

[0018] Figure 3 This is a circuit diagram of the parallel IGBT drive circuit provided by this utility model.

[0019] Figure 4 This is one of the current waveform diagrams of the first IGBT during double-pulse turn-off provided by this utility model; Figure 5 This is one of the current waveform diagrams of the second IGBT during double-pulse turn-off provided by this utility model; Figure 6 This is the second current waveform diagram of the first IGBT during double-pulse turn-off provided by this utility model; Figure 7 This is the second current waveform diagram of the second IGBT during double-pulse turn-off provided by this utility model; Figure 8 This is the current waveform diagram of the first IGBT under 800A rated load provided by this utility model; Figure 9 This is the current waveform diagram of the second IGBT under 800A rated load provided by this utility model. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0021] It should be noted that in the description of this utility model, the terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The terms "upper," "lower," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Unless otherwise expressly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly, for example, as a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium; or a connection within two elements. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0022] In this invention, the terms "first," "second," etc., are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this invention can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class, without limiting the number of objects; for example, the first object can be one or more. Furthermore, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0023] The following is combined Figures 1-9 This invention describes the parallel IGBT drive circuit provided by this utility model.

[0024] like Figure 1 As shown, the parallel IGBT drive circuit of this utility model includes: Power module; The drive module has its power supply terminal connected to the output terminal of the power supply module, and its output terminal is connected to the gate of the first IGBT and the gate of the second IGBT in the parallel IGBTs respectively. The first resistor module is connected in series between the emitter of the first IGBT and the ground terminal of the power supply module. The second resistor module is connected in series between the emitter of the second IGBT and the ground terminal of the power supply module. The first resistor module and the second resistor module have the same resistance value.

[0025] The power supply module supplies power to the drive module, which in turn drives the parallel IGBTs to turn on or off. When the drive module outputs a high level to the gate of any IGBT, the IGBT turns on; when the drive module outputs a low level to the gate of any IGBT, the IGBT turns off.

[0026] For example, the resistance value of both the first resistor module and the second resistor module can be 2.2Ω.

[0027] It is understandable that the voltage difference between the first resistor module or the second resistor module can be used to dynamically adjust the conduction voltage of the two IGBTs, thereby compensating for the mismatch in conduction impedance between the two IGBTs. If the transient current of one IGBT suddenly increases during switching, the voltage drop across its emitter resistor module increases, which effectively raises the conduction threshold of that IGBT, forcing the current to be diverted to the other IGBT, thereby suppressing the dynamic uneven current of the parallel IGBTs.

[0028] In some implementations, such as Figure 2 As shown, the power module may further include a self-oscillating half-bridge driver, a MOSFET half-bridge circuit, an isolation transformer, and a rectifier bridge; The self-oscillating half-bridge driver is connected to the AC input terminal of the rectifier bridge via a MOSFET half-bridge circuit and an isolation transformer. The DC output terminal of the rectifier bridge is connected to the power supply terminal of the driver module.

[0029] Among them, the self-oscillating half-bridge driver is used to generate a half-bridge PWM signal to drive the two MOSFETs in the MOSFET half-bridge circuit to conduct alternately. The MOSFET half-bridge circuit is used to generate a square wave signal and provide it to the primary side of the isolation transformer. The isolation transformer is used to convert the square wave signal into an AC signal. The rectifier bridge is used to convert the AC signal into a DC voltage.

[0030] The power supply module and the drive module of this invention are completely isolated by an isolation transformer, which can reduce the interference of common-mode noise on the circuit.

[0031] In some implementations, such as Figure 2 As shown, the driving module may further include a first driving circuit, a first transistor push-pull circuit, a second driving circuit, and a second transistor push-pull circuit. The power supply terminal of the first driving circuit is connected to the output terminal of the power module, the output terminal of the first driving circuit is connected to the input terminal of the first transistor push-pull circuit, and the output terminal of the first transistor push-pull circuit is connected to the gate of the first IGBT. The power supply terminal of the second drive circuit is connected to the output terminal of the power module, the output terminal of the second drive circuit is connected to the input terminal of the second transistor push-pull circuit, and the output terminal of the second transistor push-pull circuit is connected to the gate of the second IGBT.

[0032] Specifically, when the first driving circuit outputs a high level, the transistor in the first push-pull circuit can quickly charge the gate capacitor of the first IGBT to a positive power supply voltage, causing the first IGBT to turn on quickly. When the first driving circuit outputs a low level, the transistor in the first push-pull circuit can quickly discharge the gate capacitor of the first IGBT to a negative power supply voltage, causing the first IGBT to turn off quickly. The second driving circuit operates on a similar principle to the second push-pull circuit.

[0033] Therefore, the gate drive capability of the drive module can be enhanced by the transistor push-pull circuit, the gate capacitance of the IGBT can be charged and discharged quickly, the turn-on and turn-off speed of the IGBT can be improved, and the low impedance path (<1Ω) of the push-pull circuit reduces the influence of parasitic inductance in the IGBT gate circuit, which can reduce switching losses.

[0034] Furthermore, in traditional solutions, the two drives of the drive module use two independent power supplies, while the two drives of this invention share a single power supply module, which reduces circuit complexity and circuit cost.

[0035] In some implementations, both the first driving circuit and the second driving circuit can be isolated gate drivers.

[0036] In some implementations, such as Figure 2 As shown, the drive module may further include a controller, which is connected to the input terminal of the first drive circuit and the input terminal of the second drive circuit respectively. The controller is used to output interlock drive signals to the first drive circuit and the second drive circuit.

[0037] By outputting an interlock drive signal from the controller, one of the first drive circuit and the second drive circuit can output a high level while the other outputs a low level at the same time, thus ensuring that only one IGBT is turned on at any given moment. Furthermore, since the input signals for both the first and second drive circuits are provided by the same controller, initial phase consistency is guaranteed, reducing synchronization errors.

[0038] In some implementations, such as Figure 3 As shown, the first resistor module may further include a resistor RZ1, which is connected in series between the emitter of the first IGBT and the ground terminal of the power module.

[0039] The second resistor module may further include a resistor RZ2, which is connected in series between the emitter of the second IGBT and the ground terminal of the power module.

[0040] The self-oscillating half-bridge driver, MOSFET half-bridge circuit, and rectifier bridge can be model IRS2153DSTRPBF, IRF7103TR, and GBU808, respectively. The isolation transformer parameters are a turns ratio of 20:46:26, a core model of EFD20, and a ferrite material.

[0041] The isolated gate driver model can be NSI6651ASC-DSWR.

[0042] In the first and second transistor push-pull circuits, the two transistors can be MJD45H11G and MJD44H11G, respectively.

[0043] Figure 3 In the circuit, resistors RZ1 and RZ2 both have a resistance of 2.2Ω; the IRS2153DSTRPBF chip is configured in half-bridge mode, generating a PWM signal with a frequency of 91kHz and a duty cycle of 50%, driving the IRF7103TR chip to generate a square wave signal with a low value of 0 and a high value of 15V; the output of the power module is the DC output of the rectifier bridge, and the AC signal output from the isolation transformer is rectified by the GBU808 chip to obtain +15V and -8V DC voltages respectively, which power the parallel IGBTs, the first drive circuit, and the second drive circuit; drive circuit 1 is the first drive circuit, driving the IGBTs... Path 2 is the second drive circuit. Push-pull circuit 1 is the first transistor push-pull circuit, push-pull circuit 2 is the second transistor push-pull circuit, IGBT1 is the first IGBT, and IGBT2 is the second IGBT. The input terminals of the first drive circuit and the second drive circuit both include DR1 and DR2 pins. The controller outputs interlock drive signals through DR1 and DR2. VCE is the IGBT short-circuit signal, and ULV is the power supply undervoltage signal. The output terminals of the first drive circuit include DRH1 and DRL1 pins, and the output terminals of the second drive circuit both include DRH2 and DRL2 pins.

[0044] Figure 3 The circuit can achieve a push-pull circuit transmission delay of ≤30ns, ensuring that the synchronization error of the two IGBT drive signals is <5ns; and the common-mode noise immunity is >5kV / μs.

[0045] right Figure 3 The circuit was tested, and the results are as follows: Figures 4-9 As shown.

[0046] Figure 4 The transient current of the first IGBT during the double-pulse turn-off is 1222A at 131µs. Figure 5When the double pulse turns off, the transient current of the second IGBT is 1179A at 131us. The difference between the two transient currents can be calculated to be 42A, the total current is 2400A, and the non-uniform current is 42 / 2400=1.75%.

[0047] Figure 6 During the double-pulse turn-off, the transient current of the first IGBT is 1226A at 113.246µs. Figure 7 When the double pulse turns off, the transient current of the second IGBT is 1110A at 113.246us. The difference between the two transient currents can be calculated to be 116A, the total current is 2336A, and the current imbalance is 116 / 2336=5%.

[0048] Figure 8 When the rated load is 800A, the difference in AC output current between the two IGBTs is the largest at 5.635ms, and the transient current of the first IGBT is -530.762A at 5.635ms. Figure 9 When the rated load is 800A, the transient current of the second IGBT is -544.609A at 5.635ms. The difference between the two transient currents can be calculated to be 13.847A, the total current is 1075A, and the current imbalance is 13.847 / 1075=1.3%.

[0049] Therefore, it can be seen that this utility model can achieve a current unevenness of <5% for two parallel IGBTs under dual-pulse and whole-machine load conditions.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A parallel IGBT drive circuit, characterized in that, include: Power module; A drive module, wherein the power supply terminal of the drive module is connected to the output terminal of the power supply module, and the output terminal of the drive module is respectively connected to the gate of the first IGBT and the gate of the second IGBT in the parallel IGBT; The first resistor module is connected in series between the emitter of the first IGBT and the ground terminal of the power supply module. The second resistor module is connected in series between the emitter of the second IGBT and the ground terminal of the power supply module. The first resistor module and the second resistor module have the same resistance value.

2. The parallel IGBT drive circuit according to claim 1, characterized in that, The first resistor module includes a resistor RZ1, which is connected in series between the emitter of the first IGBT and the ground terminal of the power module.

3. The parallel IGBT drive circuit according to claim 1, characterized in that, The second resistor module includes a resistor RZ2, which is connected in series between the emitter of the second IGBT and the ground terminal of the power module.

4. The parallel IGBT drive circuit according to claim 1, characterized in that, The power module includes a self-oscillating half-bridge driver, a MOSFET half-bridge circuit, an isolation transformer, and a rectifier bridge. The self-oscillating half-bridge driver is connected to the AC input terminal of the rectifier bridge via the MOS transistor half-bridge circuit and the isolation transformer in sequence, and the DC output terminal of the rectifier bridge is connected to the power supply terminal of the drive module.

5. The parallel IGBT drive circuit according to claim 4, characterized in that, The self-oscillating half-bridge driver, the MOS transistor half-bridge circuit, and the rectifier bridge are model IRS2153DSTRPBF, IRF7103TR, and GBU808, respectively.

6. The parallel IGBT drive circuit according to claim 1, characterized in that, The drive module includes a first drive circuit, a first transistor push-pull circuit, a second drive circuit, and a second transistor push-pull circuit. The power supply terminal of the first driving circuit is connected to the output terminal of the power module, the output terminal of the first driving circuit is connected to the input terminal of the first transistor push-pull circuit, and the output terminal of the first transistor push-pull circuit is connected to the gate of the first IGBT. The power supply terminal of the second driving circuit is connected to the output terminal of the power module, the output terminal of the second driving circuit is connected to the input terminal of the second transistor push-pull circuit, and the output terminal of the second transistor push-pull circuit is connected to the gate of the second IGBT.

7. The parallel IGBT drive circuit according to claim 6, characterized in that, Both the first driving circuit and the second driving circuit are isolated gate drivers.

8. The parallel IGBT drive circuit according to claim 7, characterized in that, The isolated gate driver is model NSI6651ASC-DSWR.

9. The parallel IGBT drive circuit according to claim 6, characterized in that, The two transistors in the first transistor push-pull circuit or the second transistor push-pull circuit are MJD45H11G and MJD44H11G, respectively.

10. The parallel IGBT drive circuit according to claim 6, characterized in that, The drive module further includes a controller, which is connected to the input terminal of the first drive circuit and the input terminal of the second drive circuit, respectively. The controller is used to output interlock drive signals to the first drive circuit and the second drive circuit.

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