Excess atomic beam preparation system and excess atomic beam surface treatment system

Abstract

The utility model discloses a kind of super-atom beam preparation system and super-atom beam surface treatment system, it includes super-atom preparation room, beam source preparation room, vacuum pump and balance valve.Super-atom preparation room is used to prepare super-atom, and super-atom preparation room includes separate piece.Beam source preparation room is used to receive super-atom preparation room through separate piece delivery super-atom, and super-atom is prepared into super-atom beam.Multiple vacuum pumps are connected with the super-atom preparation room and the beam source preparation room respectively, and multiple vacuum pumps are selectively used to make the super-atom preparation room and the beam source preparation room reach predetermined vacuum state.Balance valve is used to selectively communicate the super-atom preparation room and the beam source preparation room, to balance the air pressure between the super-atom preparation room and the beam source preparation room.The utility model can avoid beam extractor damage in the process of constructing vacuum environment, improve the stability of super-atom beam preparation.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material processing equipment technology, and in particular to a superatom beam preparation system and a superatom beam surface treatment system. Background Technology

[0002] Gas superatomic beams have significant applications in surface etching, cleaning, and carbon-containing thin film deposition. This technology utilizes gaseous nano-aggregates (superatoms) loosely bound together from hundreds to thousands of molecules. These superatoms are ionized by electron bombardment into a controllable energy ion beam, which is then neutralized to form a stable beam. Compared to traditional ion beams, large-size superatoms can carry high total kinetic energy while maintaining moderate energy per molecule. When impacting materials, they only act on the shallow surface, effectively avoiding deep-layer damage and significantly improving the precision of surface modification.

[0003] However, existing equipment has inherent drawbacks due to the physical isolation design of the gathering chamber (for generating neutral superatoms) and the shaping chamber (for ionization and beam shaping): the two chambers transfer superatoms through a beam extractor, and when constructing a high-vacuum environment, the vacuum levels in the two chambers are prone to differing due to variations in chamber volume and vacuum pump parameters (model, start-stop sequence, pumping rate, etc.). Furthermore, the small aperture of the beam extractor makes it unable to balance the pressure difference, making the beam extractor susceptible to damage from pressure shocks. This affects the stability of superatomic beam preparation and the lifespan of the equipment, limiting the technology's widespread adoption and necessitating optimization.

[0004] This section provides background information related to this application, which is not necessarily prior art. Utility Model Content

[0005] The purpose of this invention is to provide a superatomic beam preparation system and a superatomic beam surface treatment system, which can reduce the possibility of beam taker damage and improve the stability of superatomic beam preparation during the construction of a vacuum environment.

[0006] To achieve the above objectives, the following technical solution is provided:

[0007] A superatomic beam preparation system, comprising:

[0008] A superatom preparation chamber for preparing superatoms, the superatom preparation chamber including a separation element;

[0009] A beam source preparation chamber is used to receive superatoms transported from the superatom preparation chamber through the separation element, and to prepare the superatoms into a superatom beam;

[0010] Multiple vacuum pumps are connected to the superatom preparation chamber and the beam source preparation chamber respectively, and are used to selectively bring the superatom preparation chamber and the beam source preparation chamber to a predetermined vacuum state;

[0011] A balancing valve is used to selectively connect the superatom preparation chamber and the beam source preparation chamber to balance the gas pressure between the superatom preparation chamber and the beam source preparation chamber.

[0012] As an optional solution for the superatomic beam preparation system, the balancing valve includes a valve body and a connecting pipe, and the valve body is connected to the superatomic preparation chamber and the beam source preparation chamber respectively through the connecting pipe.

[0013] As an alternative to the superatom beam preparation system, the separator includes an input port for selecting a portion of the superatoms within the superatom preparation chamber, wherein the inner diameter of the input port is smaller than the inner diameter of the connecting pipe.

[0014] As an alternative to the superatom beam fabrication system, the inner diameter of the input port is mm-mm.

[0015] As an alternative to the superatomic beam preparation system, the superatomic preparation chamber includes a first chamber and a second chamber that are interconnected, the extension direction of the first chamber intersects the extension direction of the second chamber, and the plurality of vacuum pumps includes a first vacuum pump, which is located at the end of the first chamber away from the second chamber.

[0016] The balance valve is used to selectively connect the first chamber and the beam source preparation chamber.

[0017] As an optional solution for the superatomic beam preparation system, the superatomic preparation chamber includes a superatomic preparation component, the superatomic preparation component includes a nozzle, the nozzle is located in the second chamber, and is disposed between the separator and the communication between the first chamber and the second chamber.

[0018] As an alternative to the superatomic beam preparation system, the superatomic preparation chamber includes a superatomic preparation component, and the superatomic preparation component includes a nozzle;

[0019] The superatomic preparation chamber also includes a temperature regulating component, which is disposed around the nozzle to improve the uniformity of the ambient temperature around the nozzle.

[0020] As an alternative to the superatomic beam preparation system, the balancing valve includes a valve body and a connecting pipe, with the connection point of the connecting pipe to at least one of the superatomic preparation chamber and the beam source preparation chamber located near the temperature regulating element.

[0021] A superatomic beam surface treatment system, comprising:

[0022] The superatomic beam fabrication system as described in any of the foregoing embodiments; and

[0023] A surface treatment chamber for containing a sample, the surface treatment chamber being connected to the beam source preparation chamber of the superatomic preparation system so that the superatomic beam enters the surface treatment chamber and bombards the sample.

[0024] As an optional solution for the superatomic beam surface treatment system, the superatomic beam surface treatment system includes a first state and a second state. In the first state, the balancing valve balances the gas pressure between the superatomic preparation chamber and the beam source preparation chamber. In the second state, the vacuum degree of the superatomic preparation chamber is less than the vacuum degree of the beam source preparation chamber, and the vacuum degree of the beam source preparation chamber is less than the vacuum degree of the surface treatment chamber.

[0025] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0026] The superatom beam surface treatment system provided by this invention includes a superatom preparation chamber, a beam source preparation chamber, a vacuum pump, and a balancing valve. Each preparation chamber is connected to a vacuum pump, allowing each chamber to independently build a vacuum environment and shortening the vacuum environment construction time. The balancing valve balances the gas pressure in the superatom preparation chamber and the beam source preparation chamber, causing the vacuum level in both chambers to rise or fall synchronously, reducing the pressure difference between the two chambers, preventing damage to the separation components due to pressure difference, and improving the stability of superatom beam preparation. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of a superatomic beam preparation system according to an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of a superatomic beam surface treatment system according to an embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of yet another superatomic beam surface treatment system in this utility model embodiment;

[0031] Figure 4 This is a schematic diagram of a superatomic beam surface treatment system in an embodiment of the present invention.

[0032] Figure label:

[0033] 100. Sample; 200. Superatom beam;

[0034] 10. Superatomic preparation chamber; 11. Separator; 111. Input port; 112. Output port; 12. Superatomic preparation assembly; 121. Nozzle; 122. Inlet pipe; 13. First chamber; 14. Second chamber; 15. Temperature control component;

[0035] 20. Beam source preparation chamber; 21. Ionization assembly; 22. Lens assembly; 23. Magnetic screening assembly; 24. Neutralizer;

[0036] 30. Surface treatment chamber; 31. Displacement assembly; 32. Holding assembly;

[0037] 40. Vacuum pump; 41. First vacuum pump; 42. Second vacuum pump; 43. Third vacuum pump;

[0038] 50. Balancing valve; 51. Valve body; 52. Connecting pipeline;

[0039] 60. Valve structure. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0041] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0042] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0043] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0044] Figure 2 This is a schematic diagram of a superatomic beam surface treatment system according to an embodiment of the present invention. Figure 3 This is a schematic diagram of another superatomic beam surface treatment system in this embodiment of the present invention. Figure 4 This is a schematic diagram of a superatomic beam surface treatment system in an embodiment of the present invention. Figures 1 to 3 It can be a schematic diagram of the process of constructing a vacuum environment to bring each preparation chamber to a preset vacuum state. Figure 4 This could be a schematic diagram of a sample being bombarded by a superatom beam.

[0045] like Figures 1 to 4 As shown, this embodiment of the invention provides a superatomic beam preparation system, which includes a superatomic preparation chamber 10, a beam source preparation chamber 20, a vacuum pump 40, and a balancing valve 50. The superatomic preparation chamber 10 is used to prepare superatoms and includes a separator 11. The separator 11 connects the superatomic preparation chamber 10 to the beam source preparation chamber 20, serving as a channel for the transfer of superatoms from the superatomic preparation chamber 10 to the beam source preparation chamber 20.

[0046] The beam source preparation chamber 20 is used to prepare superatoms into a superatomic beam 200. Multiple vacuum pumps 40 are connected to the superatomic preparation chamber 10 and the beam source preparation chamber 20, respectively, to selectively bring the superatomic preparation chamber 10 and the beam source preparation chamber 20 to a predetermined vacuum state. A balancing valve 50 is used to selectively connect the superatomic preparation chamber 10 and the beam source preparation chamber 20 to balance the gas pressure between them.

[0047] As an example, the superatom preparation chamber 10 has a preparation chamber that accommodates a superatom preparation assembly 12, which is capable of preparing superatoms within the vacuum environment of the superatom preparation chamber 10. For example, the superatom preparation assembly 12 introduces a gas capable of forming superatoms into the superatom preparation chamber 10. A separator 11 is disposed within the preparation chamber, which can select a portion of the superatoms within the preparation chamber and transport the selected superatoms to a beam source preparation chamber 20. The beam source preparation chamber 20 may have a shaping chamber, which may also accommodate an ionization assembly 21, a lens assembly 22, a magnetic screening assembly 23, and a neutralizer 24. The superatoms entering the shaping chamber pass sequentially through the aforementioned assemblies to undergo processes such as ionization, acceleration, beaming, screening, and neutralization, thereby forming a superatom beam. The ionization assembly 21 may include an ion source and an accelerating electrode. The ion source can ionize the superatoms entering the shaping chamber. The accelerating electrode can accelerate the ionized superatoms. Lens assembly 22 can converge the accelerated superatoms to form a directional beam. Magnetic sieving assembly 23 can attract smaller superatoms from the converged beam to improve the size uniformity of the superatoms in the directional beam. The magnetically sieving directional beam is an ion beam, which needs to pass through neutralizer 24 to neutralize its charge, making it an electrically neutral superatom beam 200. Optionally, a lens assembly 22 can be additionally provided between magnetic sieving assembly 23 and neutralizer 24. The formed superatom beam 200 can enter surface treatment chamber 30 and bombard sample 100 to process the surface of sample 100, such as polishing it. Optionally, sample 100 includes semiconductor materials, such as wafers or chips.

[0048] It is understood that during the preparation of the superatomic beam, both the superatomic preparation chamber 10 and the beam source preparation chamber 20 are vacuum chambers. Each preparation chamber is evacuated and maintained under vacuum by a vacuum pump 40. For example, multiple vacuum pumps 40 include a first vacuum pump 41 connected to the superatomic preparation chamber 10 to evacuate it. Multiple vacuum pumps 40 also include a second vacuum pump 42 connected to the beam source preparation chamber to evacuate it. Optionally, the process of achieving a predetermined vacuum state can be the process of constructing a vacuum environment for the superatomic preparation chamber 10 and the beam source preparation chamber 20, or it can be the process of constructing a vacuum environment for the surface treatment chamber 30. Optionally, the process of achieving a predetermined vacuum state can also be the process of breaking the vacuum in the superatomic preparation chamber 10 and the beam source preparation chamber 20, or it can be the process of constructing a vacuum environment for the surface treatment chamber 30.

[0049] The balance valve 50 is used to open when the superatomic preparation chamber 10 and the beam source preparation chamber 20 start vacuuming and when the vacuum is broken, so as to connect the two chambers, balance the gas pressure difference between the two chambers, and avoid damage to the separation element 11 due to excessive pressure difference.

[0050] The balancing valve 50 closes when each of the two chambers reaches a preset vacuum level, ensuring that the two chambers maintain independent vacuum levels and meet the gas pressure requirements for the transfer of superatoms from the superatom preparation chamber 10 to the beam source preparation chamber 20. This allows the vacuum levels of the superatom preparation chamber 10 and the beam source preparation chamber 20 to increase or decrease synchronously, thereby reducing the pressure difference between the two chambers and thus lowering the risk of the separator 11 being squeezed or even damaged under the influence of the pressure difference. Optionally, pressure detection sensors can be installed in the two chambers. When the pressure difference between the two chambers exceeds a preset value, the balancing valve 50 is opened, allowing gas to flow bidirectionally between the two chambers, thereby reducing the pressure difference.

[0051] The superatomic beam surface treatment system provided in this application includes a superatomic preparation chamber 10, a beam source preparation chamber, a vacuum pump 40, and a balancing valve 50. Each preparation chamber is connected to a vacuum pump 40, allowing each chamber to independently build a vacuum environment and shortening the time required to build the vacuum environment. The balancing valve 50 balances the gas pressure between the superatomic preparation chamber 10 and the beam source preparation chamber, causing the vacuum level of the two chambers to rise or fall synchronously, reducing the pressure difference between the two chambers, preventing damage to the separation components due to pressure difference, and improving the stability of superatomic beam preparation.

[0052] In some alternative embodiments, the balancing valve 50 includes a valve body 51 and a connecting pipe 52, the valve body 51 being connected to the first chamber 13 and the beam source preparation chamber 20 respectively via the connecting pipe 52.

[0053] In some examples, the connecting conduit 52 comprises two conduits, one of which passes through the first chamber 13 near the wall of the separator 11, and the other of the two connecting conduits 52 passes through the beam source preparation chamber 20 near the wall of the separator 11. In other examples, one of the two connecting conduits 52 passes through the first chamber 13 near the wall of the separator 11. In still other examples, the other of the two connecting conduits 52 passes through the beam source preparation chamber 20 near the wall of the separator 11.

[0054] As an example, the valve body 51 is connected to the superatomic preparation chamber via a connecting pipe 52, and the valve body is connected to the beam source preparation chamber via another connecting pipe. When the valve body 51 is open, the two connecting pipes 52 are connected, and the first chamber 13 and the beam source preparation chamber 20 are connected via the balancing valve 50 and the separator 11; when the valve body 51 is closed, the two connecting pipes 52 are disconnected, and the first chamber 13 and the beam source preparation chamber 20 are connected via the separator 11.

[0055] Optionally, the inner diameters of the two connecting pipes 52 can be the same, or they can be different.

[0056] In these alternative embodiments, by providing connecting pipes and valve bodies, it is beneficial to simplify the overall structure of the balancing valve and the connection structure between the balancing valve and each chamber, so as to improve the layout flexibility of the balancing valve.

[0057] In some alternative embodiments, the separator 11 includes an input port 111 for selecting a portion of the superatoms within the superatom preparation chamber, the inner diameter of the input port 111 being smaller than the inner diameter of the connecting pipe 52.

[0058] Optionally, the separator 11 also includes an output port 112, which is connected to the input port 111. The output port 112 is used to transport a portion of the superatoms selected by the input port 111 into the beam source preparation chamber 20.

[0059] In this embodiment, the inner diameter of the input port 111 is designed to be small, which is beneficial for the separator 11 to accurately obtain the required superatoms; the inner diameter of the connecting pipe 52 is designed to be large, which is beneficial for quickly balancing the pressure difference between the superatom preparation chamber 10 and the beam source preparation chamber 20, accelerating the construction rate of the vacuum environment, and improving production efficiency.

[0060] In some alternative embodiments, the inner diameter of the input port 111 is 1mm-2mm. For example, the inner diameter of the input port 111 is 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm or 2mm.

[0061] In some alternative embodiments, the superatomic preparation chamber 10 includes a first chamber 13 and a second chamber 14 that are interconnected, the extension direction of the first chamber 13 intersecting the extension direction of the second chamber 14, a plurality of vacuum pumps 40 including a first vacuum pump 41 disposed at the end of the first chamber 13 away from the second chamber 14; and a balance valve 50 for selectively connecting the first chamber 13 and the beam source preparation chamber 20.

[0062] Optionally, the extension direction of the second chamber 14 may be parallel to the direction in which the second chamber 14 and the beam source preparation chamber 20 are arranged side by side.

[0063] Optionally, the extension direction of the first chamber 13 is perpendicular to the extension direction of the second chamber 14.

[0064] As an example, a first vacuum pump 41 is disposed on the wall of the first chamber 13 at the end away from the second chamber 14, and the first vacuum pump 41 can evacuate the second chamber 14 through the first chamber 13.

[0065] Optionally, the projection of the first vacuum pump 41 along its own extending direction may at least partially overlap with the separator 11, or may be spaced apart.

[0066] It is understandable that, since the first vacuum pump 41 is located in the first chamber 13, during the process of constructing a vacuum environment to reach a predetermined vacuum state, the rate of change of vacuum level in the first chamber 13 is faster than that in the second chamber 14. For example, the rate of increase of vacuum level in the first chamber 13 is greater than that in the second chamber 14, resulting in the first chamber 13 being in a relatively low-pressure region and the second chamber 14 being in a relatively high-pressure region. Furthermore, with the vacuum pump 40 connected to the beam source preparation chamber 20 turned on, the beam source preparation chamber 20 will be in a relatively low-pressure region, causing the separator 11 to be squeezed or expanded due to the pressure difference, resulting in damage to the separator 11. In this embodiment, the first chamber 13 and the beam source preparation chamber 20 are connected by a balance valve 50. During the construction of a vacuum environment, this helps reduce the possibility of a pressure difference between the two chambers due to the pumping speed of the vacuum pump 40, pipeline resistance, etc., thereby maintaining a balance of pressure on both sides of the separator 11 and reducing the possibility of damage to the separator 11 due to excessive pressure on one side.

[0067] In some alternative embodiments, the superatomic preparation chamber 10 includes a superatomic preparation component 12, which includes a nozzle 121 located in a second chamber and disposed between the separator and the communication between the first chamber 13 and the second chamber 14.

[0068] The superatom preparation assembly 12 includes a nozzle 121, which delivers the gas used to form superatoms into the superatom preparation chamber 10; that is, the nozzle 121 is located inside the superatom preparation chamber 10. Optionally, the nozzle 121 is positioned opposite and spaced apart from the separator 11. Optionally, the superatom preparation assembly 12 also includes an inlet pipe 122, which is connected to the nozzle 121. One end of the inlet pipe 122 is located inside the superatom preparation chamber 10, and the other end passes through the superatom preparation chamber 10 and is located outside the superatom preparation chamber 10. The gas used to form superatoms is delivered to the nozzle 121 via the inlet pipe 122, and the gas is injected into the superatom preparation chamber 10 from the nozzle 121. The nozzle is positioned between the separator and the connection between the first chamber 13 and the second chamber 14, such that the exhaust port of the first vacuum pump 41 for drawing vacuum into the second chamber 14 is located on the side of the nozzle 121 away from the separator 11. This increases the distance between the first vacuum pump 41, the nozzle 121, and the separator 11. When constructing a vacuum environment in the superatomic preparation chamber 10, this further reduces the risk of damage to the separator 11 due to excessive negative pressure in the area where the first vacuum pump 41 is located. At the same time, it can also reduce the impact of the first vacuum pump 41 on the nozzle 121 when drawing vacuum, reducing the possibility that the first vacuum pump 41 will remove the gas or superatoms ejected from the nozzle 121 when drawing vacuum, thereby improving the superatomic preparation efficiency.

[0069] In some alternative embodiments, the superatomic preparation chamber 10 includes a superatomic preparation component 12 and a temperature regulating component 15. The superatomic preparation component 12 includes a nozzle 121, and the temperature regulating component 15 is disposed on the periphery of the nozzle 121 to improve the uniformity of the ambient temperature around the nozzle 121.

[0070] For example, the temperature regulator 15 can regulate the temperature around the nozzle 121. For instance, when the temperature around the nozzle 121 decreases due to absorption during the superatom generation process, the temperature regulator 15 can heat the nozzle 121 to increase its temperature. When the operating temperature of the beam source preparation chamber 20 is conducted to the superatom preparation chamber 10, causing the temperature around the nozzle 121 to rise, the temperature regulator 15 can cool the nozzle 121 to reduce its temperature. This maintains the temperature around the nozzle 121 within a constant temperature range, thereby reducing the influence of external temperature during superatom generation and improving the uniformity of superatom size. Optionally, the constant temperature range includes room temperature.

[0071] Optionally, the temperature regulating element 15 may include one or a combination of cooling and heating elements. Of course, the temperature regulating element 15 may also maintain the temperature around the nozzle 121 by introducing a temperature medium at a constant temperature or a different temperature.

[0072] In some alternative embodiments, the balancing valve 50 includes a valve body 51 and a connecting pipe 52, the connecting pipe 52 being disposed near the temperature regulating member 15 at a connection point with at least one of the superatomic preparation chamber 10 and the beam source preparation chamber 20.

[0073] Optionally, after the superatom beam is prepared, if a large temperature difference occurs between the area around the temperature regulating element and other areas in the preparation chamber (such as the first chamber or the beam source preparation chamber), the balancing valve can disperse the temperature around the temperature regulating element to other areas, thereby improving the temperature uniformity within the chamber.

[0074] This invention also provides a superatomic beam surface treatment system, comprising: a superatomic beam preparation system as described in any of the foregoing embodiments, and a surface treatment chamber. The surface treatment chamber is used to contain a sample, and is connected to the beam source preparation chamber of the superatomic beam preparation system so that the superatomic beam enters the surface treatment chamber and bombards the sample.

[0075] Optionally, the surface treatment chamber 30 includes a displacement assembly 31 and a holding assembly 32, the holding assembly 32 being disposed on the displacement assembly 31 and used to hold the sample 100. The displacement assembly 31 can drive the holding assembly 32 to move, so that the sample 100 moves accordingly, thereby allowing the superatom beam 200 to bombard different positions of the sample 100.

[0076] Optionally, the beam source preparation chamber and the surface treatment chamber 30 can be connected by an opening. Of course, a valve structure 60 can also be provided at the opening between the beam source preparation chamber and the surface treatment chamber 30 to separate the two chambers.

[0077] In some alternative embodiments, the superatomic beam surface treatment system includes a first state and a second state. In the first state, a balancing valve balances the gas pressure between the superatomic preparation chamber and the beam source preparation chamber. In the second state, the vacuum degree of the superatomic preparation chamber 10 is less than the vacuum degree of the beam source preparation chamber 20, and the vacuum degree of the beam source preparation chamber 20 is less than the vacuum degree of the surface treatment chamber 30.

[0078] Optionally, the first state can be a vacuum state or a vacuum breaking state.

[0079] Optionally, the second state can be the state of the superatom beam preparation system preparing the superatom beam and / or the state of the superatom beam surface treatment system processing the sample. During the superatom beam preparation process and the sample processing process, the vacuum levels of the superatom preparation chamber, the beam source preparation chamber, and the surface treatment chamber are set to gradually decrease, so that a pressure gradient is generated between the three chambers, which is beneficial to driving the superatom beam or superatoms to move along a predetermined trajectory.

[0080] Optionally, the plurality of vacuum pumps 40 includes a third vacuum pump 43 connected to the surface treatment chamber 30 to evacuate the surface treatment chamber 30.

[0081] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A superatomic beam preparation system, characterized in that, include: A superatomic preparation chamber (10) for preparing superatoms, the superatomic preparation chamber (10) including a separator (11); The beam source preparation chamber (20) is used to receive the superatoms transported by the superatom preparation chamber (10) through the separation member (11) and prepare the superatoms into a superatom beam (200). Multiple vacuum pumps (40) are connected to the superatomic preparation chamber (10) and the beam source preparation chamber (20) respectively, and are used to selectively bring the superatomic preparation chamber (10) and the beam source preparation chamber (20) to a predetermined vacuum state; A balancing valve (50) is used to selectively connect the superatomic preparation chamber (10) and the beam source preparation chamber (20) to balance the gas pressure between the superatomic preparation chamber (10) and the beam source preparation chamber (20).

2. The superatom beam fabrication system according to claim 1, characterized in that, The balance valve (50) includes a valve body (51) and a connecting pipe (52). The valve body (51) is connected to the superatomic preparation chamber (10) and the beam source preparation chamber (20) respectively through the connecting pipe (52).

3. The superatom beam preparation system according to claim 2, characterized in that, The separator (11) includes an input port (111) for selecting a portion of the superatoms in the superatom preparation chamber (10), and the inner diameter of the input port (111) is smaller than the inner diameter of the connecting pipe (52).

4. The superatom beam preparation system according to claim 3, characterized in that, The inner diameter of the input port (111) is 1mm-2mm.

5. The superatom beam preparation system according to claim 1, characterized in that, The superatomic preparation chamber (10) includes a first chamber (13) and a second chamber (14) that are interconnected. The extension direction of the first chamber (13) intersects the extension direction of the second chamber (14). The plurality of vacuum pumps (40) includes a first vacuum pump (41), which is located at the end of the first chamber (13) away from the second chamber (14). The balance valve is used to selectively connect the first chamber (13) and the beam source preparation chamber (20).

6. The superatom beam preparation system according to claim 5, characterized in that, The superatomic preparation chamber (10) includes a superatomic preparation component (12), which includes a nozzle (121) located in the second chamber (14) and disposed between the separator (11) and the first chamber (13) and the second chamber (14).

7. The superatom beam preparation system according to claim 1, characterized in that, The superatomic preparation chamber (10) includes a superatomic preparation component (12), which includes a nozzle (121). The superatomic preparation chamber (10) also includes a temperature regulating component (15), which is disposed on the periphery of the nozzle (121) to improve the uniformity of the ambient temperature around the nozzle (121).

8. The superatom beam preparation system according to claim 7, characterized in that, The balancing valve (50) includes a valve body (51) and a connecting pipe (52), the connecting pipe (52) being located near the temperature regulating element (15) at the connection point with at least one of the superatomic preparation chamber (10) and the beam source preparation chamber (20).

9. A superatomic beam surface treatment system, characterized in that, include: The superatom beam preparation system as described in any one of claims 1 to 8; as well as A surface treatment chamber for containing a sample, the surface treatment chamber being connected to the beam source preparation chamber of the superatomic preparation system so that the superatomic beam enters the surface treatment chamber and bombards the sample.

10. The superatomic beam surface treatment system according to claim 9, characterized in that, The superatomic beam surface treatment system includes a first state and a second state. In the first state, the balancing valve balances the gas pressure between the superatomic preparation chamber and the beam source preparation chamber. In the second state, the vacuum degree of the superatomic preparation chamber (10) is less than the vacuum degree of the beam source preparation chamber (20), and the vacuum degree of the beam source preparation chamber (20) is less than the vacuum degree of the surface treatment chamber (30).

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