Wafer bonding apparatus

Abstract

Embodiments of the present application provide a wafer bonding device. The wafer bonding device comprises a chuck assembly and a pumping device. The chuck assembly is capable of bonding a first wafer to be bonded and a second wafer to be bonded along a first direction. The pumping device is arranged at the periphery of the chuck assembly. The pumping device is configured to be movable relative to the chuck assembly along the first direction to pump air at the edge of the bonding surface of the first wafer to be bonded and the second wafer to be bonded. The first direction is perpendicular to the bonding surface. The wafer bonding device provided by the embodiments of the present application can improve the bonding speed, improve the situation that air bubbles are prone to occur at the edge of the two wafers after bonding, improve the product yield, and further improve the flexibility of the pumping device and the versatility for different specifications of wafers.

Description

Technical Field

[0001] This application relates to the field of wafer fabrication technology, and more particularly to a wafer bonding device. Background Technology

[0002] In related technologies, wafer bonding equipment can tightly bond two mirror-polished homogeneous or heterogeneous wafers through chemical and physical actions. The bonding method usually involves releasing the vacuum of the upper wafer chuck at its center, pressing down the upper wafer with a pin to make the center point of the upper and lower wafers contact. Then, the vacuum of the upper wafer chuck at its edge is released, forming a bonding wave that diffuses from the center to the edge in a concentric circle. However, due to the wafer's own stress and incomplete air removal, bubbles are easily generated after the upper and lower wafers are bonded at their edges, resulting in product defects. Utility Model Content

[0003] In view of this, embodiments of this application aim to provide a wafer bonding apparatus to improve the situation where bubbles are easily generated after edge bonding of the upper and lower wafers.

[0004] To achieve the above objectives, embodiments of this application provide a wafer bonding apparatus, comprising: A chuck assembly capable of bonding a first wafer to be bonded and a second wafer to be bonded along a first direction; A vacuum device is disposed on the periphery of the chuck assembly. The vacuum device is configured to move relative to the chuck assembly along the first direction to vacuum the edges of the bonding surfaces of the first wafer to be bonded and the second wafer to be bonded, wherein the first direction is perpendicular to the bonding surfaces.

[0005] In some embodiments, the chuck assembly includes a first chuck and a second chuck, the first chuck being used to carry the first wafer to be bonded, the second chuck being able to grip the second wafer to be bonded, the second chuck being able to move closer to and further away from the first chuck along the first direction, and the vacuum device being movably disposed around the periphery of the first chuck and / or the periphery of the second chuck along the first direction.

[0006] In some embodiments, the air extraction device includes: A vacuum assembly for evacuating air; A lifting assembly is disposed around the chuck assembly, and the lifting assembly is drivenly connected to the suction assembly to drive the suction assembly to move along the first direction.

[0007] In some embodiments, the air extraction assembly includes an annular member that is sleeved around the chuck assembly and drivenly connected to the lifting assembly. The inner side of the annular member is provided with a plurality of circumferentially arranged suction ports to extract air from the outer periphery of the surface to be bonded.

[0008] In some embodiments, the suction assembly includes a plurality of suction nozzles, each suction port being provided with at least one of the suction nozzles.

[0009] In some embodiments, the air extraction device further includes a vacuum pump and multiple air passages, each of which is connected to the vacuum pump and multiple suction nozzles.

[0010] In some embodiments, the distance between the inner side of the annular member and the edge of the bonding surface is between 2 mm and 10 mm along the radial direction of the annular member.

[0011] In some embodiments, the opening size of the suction nozzle along the first direction gradually increases radially toward the chuck assembly along the annular member.

[0012] In some embodiments, the nozzle has a larger circumferential dimension than its dimension in the first direction than the annular member.

[0013] In some embodiments, the suction device further includes a switching valve and a pressure regulating valve disposed on the air passage, the switching valve being configured to open or close the air passage, and the pressure regulating valve being configured to regulate the suction pressure within the air passage.

[0014] The wafer bonding equipment provided in this application embodiment includes a vacuum device independent of the chuck assembly located around the periphery of the chuck assembly. This vacuum device can move relative to the chuck assembly along a first direction and vacuum the edges of the bonding surfaces of the first and second wafers to be bonded. On one hand, the negative pressure at the edges can increase the diffusion speed of the bonding wave between the first and second wafers, thereby increasing the bonding speed. On the other hand, it allows air at the edges of the bonding surfaces to be evacuated with the bonding wave, reducing bubble defects caused by air not being able to escape, improving the situation where bubbles easily appear at the edges of the two wafers after bonding, and increasing product yield. Furthermore, the vacuum device can be adaptively adjusted according to the different thicknesses of the first and second wafers to be bonded, achieving a flush airflow plane with the bonding surfaces, improving the flexibility of the vacuum device and its versatility for wafers of different specifications. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a wafer bonding device in one embodiment of this application; Figure 2 for Figure 1 A schematic diagram of the structure of the air extraction device after it moves away from the bonding surface along the first direction; Figure 3 This is a schematic diagram of the structure of the air extraction device in one embodiment of this application; Figure 4This is a schematic diagram of the wafer bonding apparatus in one embodiment of this application from a top view. Figure 5 This is a front view of the suction nozzle in one embodiment of this application; Figure 6 This is a side view of the suction nozzle in one embodiment of this application.

[0016] Explanation of reference numerals in the attached figures 10. Wafer bonding equipment; 11. Chuck assembly; 111. First chuck; 112. Second chuck; 12. Vacuum device; 121. Vacuum assembly; 1211. Ring-shaped component; 1212. Nozzle; 122. Lifting assembly; 123. Vacuum pump; 124. Air path; 124a. Branch path; 125. Switch valve; 126. Regulating valve; 13. Lower tray; 21. First wafer to be bonded; 22. Second wafer to be bonded. Detailed Implementation

[0017] The embodiments of this application will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this application, but should not be used to limit the scope of this application.

[0018] In the description of the embodiments of this application, it should be noted that the terms "center," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0020] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature and the second feature are in direct contact, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0021] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0022] In related technologies, wafer bonding equipment can tightly bond two mirror-polished homogeneous or heterogeneous wafers through chemical and physical actions. The bonding method usually involves releasing the vacuum of the upper wafer chuck at its center, pressing down the upper wafer with a pin to make the center point of the upper and lower wafers contact. Then, the vacuum of the upper wafer chuck at its edge is released, forming a bonding wave that diffuses from the center to the edge in a concentric circle. However, due to the wafer's own stress and incomplete air removal, bubbles are easily generated after the upper and lower wafers are bonded at their edges, resulting in product defects.

[0023] Based on the above, this application provides a wafer bonding apparatus 10. Please refer to... Figures 1 to 6 The wafer bonding apparatus 10 includes a chuck assembly 11 and a vacuum device 12. The chuck assembly 11 is capable of bonding a first wafer 21 and a second wafer 22 to be bonded along a first direction. The vacuum device 12 is disposed around the periphery of the chuck assembly 11. The vacuum device 12 is configured to be movable relative to the chuck assembly 11 along the first direction to evacuate air from the edges of the bonding surfaces of the first wafer 21 and the second wafer 22 to be bonded. The first direction is perpendicular to the bonding surfaces.

[0024] It should be noted that the first wafer to be bonded 21 and the second wafer to be bonded 22 are two separate wafers before bonding. The shapes of the first wafer to be bonded 21 and the second wafer to be bonded 22 are not limited; they can be circular, convex polygons, etc.

[0025] It is understandable that the first wafer to be bonded 21 and the second wafer to be bonded 22 will be bonded on a plane, which is called the bonding surface. The position of the bonding surface is determined by the position of the chuck assembly 11 and the thickness of the first wafer to be bonded 21 and the second wafer to be bonded 22.

[0026] For example, Figure 1 , Figure 2 , Figure 3 , Figure 5 and Figure 6 R1 in this application can be the first direction.

[0027] The degassing device 12 is disposed on the periphery of the chuck assembly 11 and can move relative to the chuck assembly 11 along a first direction perpendicular to the bonding surface. Thus, the degassing device 12 can be adaptively adjusted according to the position of the bonding surface, so that the degassing device 12 can be aligned with the bonding surfaces of the first wafer 21 and the second wafer 22 to be bonded, and degas outside the edge of the bonding surface. In other words, the degassing device 12 can be adaptively adjusted according to the different thicknesses of the first wafer 21 and the second wafer 22 to be bonded, so that the airflow plane of the degassing device is flush with the bonding surface, thereby improving the flexibility of the degassing device 12 and its versatility for wafers of different specifications.

[0028] The wafer bonding apparatus 10 provided in this application embodiment has an independent air extraction device 12 disposed around the chuck assembly 11. The air extraction device 12 can move relative to the chuck assembly 11 along a first direction and extract air from the edges of the bonding surfaces of the first wafer 21 and the second wafer 22 to be bonded. On the one hand, the negative pressure at the edge of the air extraction can increase the diffusion speed of the bonding wave between the first wafer 21 and the second wafer 22 to be bonded, thereby increasing the bonding speed. On the other hand, it can allow the air at the edge of the bonding surface to be vented with the bonding wave, reducing the bubble defects generated due to the inability to vent air, improving the situation where bubbles are prone to appear at the edges of the two wafers after bonding, and improving the product yield. Furthermore, the air extraction device 12 can be adaptively adjusted according to the different thicknesses of the first wafer 21 and the second wafer 22 to be bonded, so that the airflow plane of the air extraction is flush with the bonding surface, improving the flexibility of the air extraction device 12 and its versatility for wafers of different specifications.

[0029] In some embodiments, please refer to Figures 1 to 2The chuck assembly 11 includes a first chuck 111 and a second chuck 112. The first chuck 111 is used to carry a first wafer 21 to be bonded. The second chuck 112 is capable of gripping a second wafer 22 to be bonded. The second chuck 112 is capable of moving closer to and further away from the first chuck 111 along a first direction. A vacuum device 12 is movably disposed along the first direction around the periphery of the first chuck 111 and / or the periphery of the second chuck 112.

[0030] The first chuck 111 is used to carry the first wafer 21 to be bonded, and the second chuck 112 can pick up the second wafer 22 to be bonded. That is, the first chuck 111 and the second chuck 112 are used to pick up the first wafer 21 to be bonded and the second wafer 22 to be bonded, respectively.

[0031] The second chuck 112 can move closer to and further away from the first chuck 111 along a first direction. That is, the first chuck 111 is fixed, while the second chuck 112 moves. In this way, the chuck assembly 11 can drive the second chuck 112 to bond the second wafer 22 to be bonded on the second chuck 112 to the first wafer 21 to be bonded on the first chuck 111.

[0032] The suction device 12 is movably disposed along the first direction on the periphery of the first chuck 111 and / or the periphery of the second chuck 112. This includes three possibilities: the suction device 12 is movably disposed only on the periphery of the first chuck 111, only on the periphery of the second chuck 112, or simultaneously on the periphery of both the first chuck 111 and the second chuck 112. Specifically, "the suction device 12 is movably disposed on the periphery of the first chuck 111" means that the suction device 12 can move along the first direction on the periphery of the first chuck 111. The other two possibilities are similar and will not be elaborated further.

[0033] In this embodiment, by movably arranging the air extraction device 12 around the periphery of the first chuck 111 and / or the periphery of the second chuck 112 along the first direction, and having a gap between the air extraction device 12 and the first chuck 111 and the second chuck 112, it is beneficial for the air extraction device 12 to move relative to the chuck assembly 11 along the first direction, while improving the compactness between the chuck assembly 11 and the air extraction device 12.

[0034] In some embodiments, please refer to Figures 1 to 4 The air extraction device 12 includes an air extraction assembly 121 and a lifting assembly 122. The air extraction assembly 121 is used for air extraction. The lifting assembly 122 is disposed around the chuck assembly 11. The lifting assembly 122 is drivenly connected to the air extraction assembly 121 and is used to drive the air extraction assembly 121 to move along a first direction.

[0035] The vacuum component 121 is used to vacuum the edges of the bonding surfaces of the first wafer to be bonded 21 and the second wafer to be bonded 22. In other words, the vacuum component 121 is also located on the periphery of the chuck component 11 and is aligned with the edges of the bonding surfaces of the first wafer to be bonded 21 and the second wafer to be bonded 22 during vacuuming.

[0036] The lifting assembly 122 is located on the periphery of the chuck assembly 11, which facilitates the lifting assembly 122 in driving the suction assembly 121 to move in the first direction.

[0037] Here, the lifting assembly 122 may include a housing and a drive end. The drive end is telescopic relative to the housing and is used to drive the suction assembly 121. The housing of the lifting assembly 122 may be fixed to the first chuck 111 or the second chuck 112 so that the suction assembly 121 can move relative to the first chuck 111 or the second chuck 112 in a first direction.

[0038] For example, the housing of the lifting assembly 122 and the first chuck 111 are fixed together on the lower tray 13. The driving end of the lifting assembly 122 is driven to be connected to the vacuum assembly 121 so that the lifting assembly 122 can drive the vacuum assembly 121 to move relative to the first chuck 111 along the first direction and reach the edge of the bonding surface of the first wafer to be bonded 21 and the second wafer to be bonded 22 to perform the vacuuming operation.

[0039] For example, the maximum stroke of the lifting assembly 122 is between 30 μm and 100 μm. Specifically, the maximum stroke of the lifting assembly 122 can be 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm. μm refers to micrometer, a unit of length.

[0040] In other words, the lifting assembly 122 can drive the suction assembly 121 to move along the first direction at least within a stroke range of 0 μm to 30 μm, and at most within a stroke range of 0 μm to 100 μm.

[0041] For example, the vacuum assembly 121 can be stored in the lower tray 13. In the stored state, the vacuum assembly 121 is flush with the plane where the first chuck 111 is located. It can be understood that since the second wafer to be bonded 22 has a certain thickness, when the vacuum assembly 121 moves from the initial position in the stored state along the first direction to the working position of the plane where the bonding surface between the first wafer to be bonded 21 and the second wafer to be bonded 22 is located, the vacuum assembly 121 needs to cross the second wafer to be bonded 22 at least in the first direction. At this time, the maximum stroke of the lifting assembly 122 also needs to be increased by the thickness of the second wafer to be bonded 22 in the range of 30μm to 100μm.

[0042] For example, the thickness of the second wafer to be bonded 22 can be 775 μm, meaning the maximum stroke of the lifting assembly 122 is between 805 μm and 875 μm. That is, the lifting assembly 122 can drive the vacuum assembly 121 to move along the first direction at least within a stroke range of 775 μm to 805 μm, and at most within a stroke range of 775 μm to 875 μm.

[0043] For example, the lifting assembly 122 may be a motor or a cylinder.

[0044] In some embodiments, please refer to Figures 1 to 4 The air extraction assembly 121 includes an annular member 1211. The annular member 1211 is sleeved around the chuck assembly 11 and is drivenly connected to the lifting assembly 122. The inner side of the annular member 1211 is provided with a plurality of suction ports arranged circumferentially to extract air from the outer periphery of the surface to be bonded.

[0045] It should be noted that the annular component 1211 can be in the shape of a planar figure enclosed by a closed curve, specifically in the form of a circular ring, an elliptical ring, a waist-shaped ring, etc.

[0046] The suction port is formed directly on the inner side of the annular part 1211, which can reduce the number of parts and make the structure of the suction assembly 121 simpler, which is conducive to the assembly of the suction assembly 121.

[0047] The "multiple" mentioned in the embodiments of this application refers to two or more.

[0048] For example, Figure 4 , Figure 5 R2 in this application can be the circumferential direction of the annular member 1211. Figure 6 R3 in this application can be the radial direction of the annular member 1211.

[0049] Here, by fitting the annular member 1211 around the chuck assembly 11, and with multiple circumferentially arranged suction ports on the inner side of the annular member 1211 facing inwards, when the annular member 1211 is driven by the lifting assembly 122 until the suction ports are flush with the outer periphery of the surface to be bonded, the suction ports can directly extract air from the outer periphery of the surface to be bonded, shortening the air extraction path and improving extraction efficiency. Simultaneously, the multiple circumferentially arranged suction ports improve the uniformity of edge extraction, mitigating the problem of air bubbles easily forming due to low local extraction efficiency at the edges.

[0050] For example, the suction ports are evenly distributed along the circumference of the annular member 1211.

[0051] For example, the diameter of the inner side of the annular member 1211 is between 304 mm and 320 mm. mm refers to millimeter, a unit of length.

[0052] In some embodiments, please refer to Figures 1 to 6 The suction assembly 121 includes a plurality of suction nozzles 1212. Each suction port is provided with at least one suction nozzle 1212.

[0053] Each suction port is provided with at least one suction nozzle 1212. That is to say, the number of suction ports can correspond one-to-one with the number of suction nozzles 1212, or the number of suction nozzles 1212 can be greater than the number of suction ports.

[0054] By providing a suction nozzle 1212 at the suction port inside the annular component 1211, the efficiency of air extraction can be further improved.

[0055] For example, each suction port is provided with a suction nozzle 1212, which is evenly distributed along the circumference of the annular member 1211.

[0056] In some embodiments, please refer to Figures 1 to 6 The air extraction device 12 also includes a vacuum pump 123 and multiple air passages 124. Each air passage 124 is connected to the vacuum pump 123 and multiple suction nozzles 1212.

[0057] Here, vacuum pump 123 refers to a device or equipment that uses mechanical, physical, chemical or physicochemical methods to evacuate a container to obtain a vacuum.

[0058] In this embodiment, by setting multiple air paths 124, each air path 124 is connected to a vacuum pump 123 and multiple suction nozzles 1212 respectively. In this way, all the suction nozzles 1212 on the annular member 1211 can be divided into multiple groups, which can reduce the number of suction nozzles 1212 on a single air path 124. This improves the situation where the suction effect of a single air path 124 becomes weaker as the air path 124 moves further away from the vacuum pump 123, resulting in a large difference in the suction effect of each suction nozzle 1212 on the same air path 124. This can improve the consistency and uniformity of the suction effect of all suction nozzles 1212 on the annular member 1211, thereby improving the situation where air bubbles appear locally due to uneven suction at the outer periphery.

[0059] In some embodiments, please refer to Figures 1 to 6 Along the radial direction of the annular member 1211, the distance between the inner side of the annular member 1211 and the edge of the bonding surface is between 2 mm and 10 mm.

[0060] For example, along the radial direction of the annular member 1211, the distance between the inner side of the annular member 1211 and the edge of the surface to be bonded is 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm, etc.

[0061] Here, along the radial direction of the annular member 1211, the distance between the inner side of the annular member 1211 and the edge of the bonding surface refers to the distance on one side. Correspondingly, the difference between the inner diameter of the annular member 1211 and the outer diameter of the first wafer to be bonded 21 or the outer diameter of the second wafer to be bonded 22 can be between 4 mm and 20 mm, which refers to the distance on both sides.

[0062] In this embodiment, the annular member 1211 is sleeved on the edge of the surface to be bonded, and the distance between the inner side of the annular member 1211 and the edge of the surface to be bonded is set between 2mm and 10mm. This can improve the compactness of the annular member 1211 while making the suction port or nozzle 1212 as close as possible to the edge of the surface to be bonded, thereby improving the suction effect.

[0063] In some embodiments, please refer to Figure 5 and Figure 6 The opening size of the suction nozzle 1212 along the first direction gradually increases radially toward the chuck assembly 11 along the annular member 1211.

[0064] In other words, the opening of the suction nozzle 1212 is located at the midpoint between the first chuck 111 and the second chuck 112, where its radial dimension is smallest. From the midpoint between the first chuck 111 and the second chuck 112, along the first direction towards the first chuck 111 and the second chuck 112 respectively, the opening of the suction nozzle 1212 gradually increases radially until the suction nozzle 1212 finally takes on a shape similar to that of a duckbill clip when it is open. In this way, the opening degree of the suction nozzle 1212 can be increased at the midpoint between the first chuck 111 and the second chuck 112, i.e., at the plane where the bonding surface is located, thereby improving the suction efficiency of the suction nozzle 1212 at the edge of the bonding surface.

[0065] In some embodiments, please refer to Figures 5 to 6 The dimension of the nozzle 1212 in the circumferential direction of the annular member 1211 is greater than the dimension in the first direction.

[0066] In other words, the suction nozzle 1212 has a flat opening. This increases the circumferential size of the suction nozzle 1212, thereby improving the circumferential suction efficiency.

[0067] In some embodiments, please refer to Figure 3 The suction device 12 also includes a switching valve 125 and a pressure regulating valve disposed on the air passage 124. The switching valve 125 is configured to open or close the air passage 124. The pressure regulating valve is configured to regulate the suction pressure within the air passage 124.

[0068] The switching valve 125 is connected in series with the pressure regulating valve. One end of the switching valve is connected to the vacuum pump 123, and the other end is connected to multiple suction nozzles 1212 of this gas path 124. The switching valve 125 controls the on / off time, and the pressure regulating valve controls the vacuum level, for example, from 0 mbar to 800 mbar. mbar refers to megabar, a unit of pressure measurement.

[0069] For example, the vacuum pump 12 has two air passages 124, each connected to the vacuum pump 123 via a switching valve 125 and a pressure regulating valve. Each air passage 124 is divided into four branches 124a on the annular member 1211 side, each branch 124a connected to three suction nozzles 1212. The branches 124a of one air passage 124 and the branches 124a of the other air passage 124 are paired and enter the annular member 1211 from the same position. After entering the annular member 1211, the branches 124a of the two different air passages in the same group extend in opposite directions within the annular member 1211 and connect to the suction nozzles 1212 on the annular member 1211. In this way, the number of nozzles 1212 on the same gas path 124 can be minimized, the consistency of gas extraction efficiency at each nozzle 1212 can be improved, and the uniformity of gas extraction at the outer periphery of the wafer can be improved, thereby improving the bonding quality.

[0070] The above description is merely a preferred embodiment of this application and is not intended to limit the application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A wafer bonding apparatus, characterized in that, include: A chuck assembly capable of bonding a first wafer to be bonded and a second wafer to be bonded along a first direction; A vacuum device is disposed on the periphery of the chuck assembly. The vacuum device is configured to move relative to the chuck assembly along the first direction to vacuum the edges of the bonding surfaces of the first wafer to be bonded and the second wafer to be bonded, wherein the first direction is perpendicular to the bonding surfaces.

2. The wafer bonding equipment according to claim 1, characterized in that, The chuck assembly includes a first chuck and a second chuck. The first chuck is used to carry the first wafer to be bonded, and the second chuck is capable of gripping the second wafer to be bonded. The second chuck can move closer to and further away from the first chuck along the first direction. The vacuum device is movably disposed around the periphery of the first chuck and / or the periphery of the second chuck along the first direction.

3. The wafer bonding equipment according to claim 1, characterized in that, The air extraction device includes: Evacuation assembly for evacuating air; A lifting assembly is disposed around the chuck assembly, and the lifting assembly is drivenly connected to the suction assembly to drive the suction assembly to move along the first direction.

4. The wafer bonding equipment according to claim 3, characterized in that, The air extraction assembly includes an annular component, which is sleeved around the chuck assembly and drivenly connected to the lifting assembly. The inner side of the annular component is provided with a plurality of suction ports arranged circumferentially to extract air from the outer periphery of the surface to be bonded.

5. The wafer bonding equipment according to claim 4, characterized in that, The air extraction assembly includes multiple suction nozzles, and each suction port is provided with at least one suction nozzle.

6. The wafer bonding equipment according to claim 5, characterized in that, The air extraction device also includes a vacuum pump and multiple air paths, each of which is connected to the vacuum pump and multiple suction nozzles.

7. The wafer bonding equipment according to claim 5, characterized in that, Along the radial direction of the annular member, the distance between the inner side of the annular member and the edge of the surface to be bonded is between 2 mm and 10 mm.

8. The wafer bonding equipment according to claim 5, characterized in that, The opening size of the suction nozzle along the first direction gradually increases radially toward the chuck assembly along the annular member.

9. The wafer bonding equipment according to claim 5, characterized in that, The size of the suction nozzle in the circumferential direction of the annular member is greater than its size in the first direction.

10. The wafer bonding apparatus according to claim 6, characterized in that, The air extraction device further includes a switching valve and a pressure regulating valve disposed on the air path. The switching valve is configured to open or close the air path, and the pressure regulating valve is configured to regulate the suction pressure in the air path.

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