A dry cleaning apparatus

Abstract

The utility model belongs to the technical field of silicon wafer cleaning, disclose a kind of dry cleaning equipment.The dry cleaning equipment includes conveying mechanism and pulse spraying mechanism, conveying mechanism is used to convey silicon wafer, pulse spraying mechanism includes pulse generating device and spraying device, spraying device is located the upside of conveying mechanism and is communicated with pulse generating device, pulse generating device is used to provide high-frequency high-pressure pulse airflow to spraying device, to blow the particle on silicon wafer by spraying device.The dry cleaning equipment provided by the utility model, by high-frequency high-pressure pulse airflow blowing silicon wafer, can significantly improve the cleaning effect of silicon wafer surface particle.

Description

Technical Field

[0001] This utility model relates to the field of silicon wafer cleaning technology, and in particular to a dry cleaning device. Background Technology

[0002] During the production and processing of silicon wafers, some particles may adhere to them. If these particles are not treated in time, they will not only affect subsequent processing steps but also reduce the yield of finished cells. In existing technologies, high-pressure airflow is usually used to continuously blow and clean the surface of silicon wafers. However, the surface of silicon wafers has many gaps, and the cleaning effect of continuous airflow is limited due to its uniform flow rate and stable pressure distribution. It is also less effective at cleaning particles in the gaps.

[0003] Therefore, there is an urgent need to provide a dry cleaning device to solve the above problems. Utility Model Content

[0004] The purpose of this invention is to provide a dry cleaning device that can significantly improve the cleaning effect of particles on the silicon wafer surface by blowing silicon wafers with high-frequency and high-pressure pulsed airflow.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A dry cleaning device, comprising:

[0007] A conveying mechanism for conveying silicon wafers;

[0008] A pulse jet blowing mechanism, comprising a pulse generator and a blowing device, wherein the blowing device is located above the conveying mechanism and is connected to the pulse generator, and the pulse generator is used to provide a high-frequency, high-pressure pulsed airflow to the blowing device to blow particles on the silicon wafer through the blowing device.

[0009] As an optional solution, the pulse generating device includes a gas supply structure, a pressurizing structure, and an electromagnetic pulse valve. The pressurizing structure is connected to the gas supply structure, and the electromagnetic pulse valve is connected between the pressurizing structure and the jetting device.

[0010] As an alternative, the electromagnetic pulse valve is integrated into the jetting device or connected to the jetting device via an air guide pipe.

[0011] As an optional solution, the dry cleaning equipment also includes a particle collection box, which is located below the conveying mechanism and is used to collect the particles being blown.

[0012] As an optional approach, the pulse frequency range of the pulsed airflow is 10Hz-200Hz.

[0013] As an optional approach, the pressure range of the pulsed airflow is 0.2 MPa to 2 MPa.

[0014] As an optional solution, the angle between the jet direction of the pulsed airflow and the vertical direction is 0°-60°.

[0015] As an alternative, the angle between the blowing direction of the pulsed airflow and the vertical direction is 0°, and it is perpendicular to the silicon wafer.

[0016] As an optional solution, the vertical distance between the blowing device and the silicon wafer is 1cm-10cm.

[0017] As an alternative, the blowing device is a nozzle.

[0018] The beneficial effects of this utility model are:

[0019] This invention provides a dry cleaning device. During operation, a conveying mechanism transports multiple silicon wafers. When the wafers move below a blowing device, a pulse generator provides a high-frequency, high-pressure pulsed airflow to the blowing device. The blowing device then sprays this high-frequency, high-pressure pulsed airflow onto the silicon wafers to remove particles. By employing a high-frequency, high-pressure pulsed airflow, the high-pressure airflow is intermittently blown at a high frequency. This instantaneous high-pressure airflow forms a strong shock wave that directly acts on the particles on the silicon wafer surface. For particles within crevices, the shock wave can disrupt the adhesion between the particles and the silicon wafer, loosening the originally tightly bound particle clusters. Compared to the continuous laminar flow state of existing technologies, this pulsed turbulence more easily disrupts particle adhesion, thereby achieving thorough dust removal and significantly improving the cleaning effect on the silicon wafer surface. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a silicon wafer provided by existing technology;

[0021] Figure 2 This is a schematic diagram illustrating the effect of the continuous purging method provided by existing technology;

[0022] Figure 3 This is a schematic diagram of the dry cleaning equipment provided in this embodiment of the utility model;

[0023] Figure 4 This is a schematic diagram illustrating the effect of the purging method provided in this embodiment of the utility model.

[0024] In the picture:

[0025] 100, silicon wafer; 200, silicon particle;

[0026] 10. Conveying mechanism; 20. Pulse jetting mechanism; 21. Pulse generating device; 211. Gas supply structure; 212. Pressurizing structure; 213. Electromagnetic pulse valve; 22. Jetting device; 23. Air guide pipe; 30. Particle collection box. Detailed Implementation

[0027] The embodiments of this utility model are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar parts or parts having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model.

[0028] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection or a detachable connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0029] In the description of this utility model, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0030] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0031] like Figure 1 As shown, silicon wafer 100 may have some particles 200 adhering to it during production and processing. If these particles are not treated in time, they will not only affect subsequent processing steps but also reduce the yield of the finished battery. Figure 2 As shown, in the prior art, high-pressure airflow is usually used to continuously blow the surface of silicon wafer 100 for cleaning. However, the surface of silicon wafer 100 has many gaps, and the cleaning effect of continuous airflow is limited because the flow rate is uniform and the pressure distribution is stable. The cleaning effect is poor for particles 200 in the gaps.

[0032] To solve the above problems, such as Figure 3 As shown, this embodiment provides a dry cleaning device, including a conveying mechanism 10 and a pulse jet blowing mechanism 20. The conveying mechanism 10 is used to convey a silicon wafer 100. The pulse jet blowing mechanism 20 includes a pulse generating device 21 and a blowing device 22. The blowing device 22 is located above the conveying mechanism 10 and is connected to the pulse generating device 21. The pulse generating device 21 is used to provide a high-frequency, high-pressure pulsed airflow to the blowing device 22 to blow particles 200 on the silicon wafer 100 through the blowing device 22.

[0033] In this embodiment of the dry cleaning equipment, the conveying mechanism 10 is used to convey multiple silicon wafers 100 in the horizontal direction. When a silicon wafer 100 moves below the blowing device 22, the pulse generator 21 provides a high-frequency, high-pressure pulsed airflow to the blowing device 22. The blowing device 22 blows the high-frequency, high-pressure pulsed airflow onto the silicon wafer 100 to remove the particles 200 from the silicon wafer 100. Figure 4 As shown, by employing high-frequency, high-pressure pulsed airflow, the high-pressure airflow is intermittently blown onto the silicon wafer 100 at a high frequency. This instantaneous high-pressure airflow forms a strong shock wave that directly acts on the particles 200 on the surface of the silicon wafer 100. For particles 200 in the gaps, the shock wave can destroy the adhesion between the particles 200 and the silicon wafer 100, causing the originally tightly bound particle group 200 to loosen. Compared with the laminar flow state of continuous blowing in the prior art, this pulsed turbulence is more likely to destroy the adhesion of particles 200, thereby achieving thorough dust removal and significantly improving the cleaning effect of particles 200 on the surface of the silicon wafer 100.

[0034] It should be noted that the conveying mechanism 10 can adopt common technologies such as belt conveyor, roller conveyor, and chain conveyor, which will not be elaborated here.

[0035] In this embodiment, as Figure 3 As shown, the pulse generating device 21 specifically includes a gas supply structure 211, a pressurizing structure 212, and an electromagnetic pulse valve 213. The pressurizing structure 212 is connected to the gas supply structure 211, and the electromagnetic pulse valve 213 is connected between the pressurizing structure 212 and the blowing device 22. Specifically, the gas supply structure 211 is connected to the pressurizing structure 212 through a gas guide pipe 23, and the pressurizing structure 212 is connected to the electromagnetic pulse valve 213 through a gas guide pipe 23. The gas supply structure 211 is used to supply gas to the pressurizing structure 212, and the pressurizing structure 212 is used to compress the gas to form a high-pressure gas with a preset pressure. The electromagnetic pulse valve 213 controls the high-pressure gas to be delivered to the blowing device 22 at a specific frequency through rapid opening and closing to form an intermittent blowing pattern. The blowing device 22 blows a high-frequency, high-pressure pulsed airflow onto the silicon wafer 100 in a very short time to blow away the particles 200 on the silicon wafer 100.

[0036] The gas supply structure 211 can be a gas generator or a gas storage tank, as long as it can supply gas to the pressurization structure 212. The gas includes, but is not limited to, compressed air such as nitrogen or carbon dioxide. The pressurization structure 212 can be a gas booster pump, an air compressor, or the like.

[0037] It should be noted that the gas supply structure 211 and the pressurization structure 212 can be placed on the ground, on a workbench, or fixed on a corresponding bracket. The blowing structure can be fixed by the bracket.

[0038] In an optional embodiment, such as Figure 3 As shown, the electromagnetic pulse valve 213 can be connected to the jetting device 22 via the air guide pipe 23, thereby delivering a high-frequency, high-pressure pulsed airflow into the jetting device 22 through the air guide pipe 23. In another optional embodiment, the electromagnetic pulse valve 213 can also be directly integrated into the jetting device 22, without specific limitations.

[0039] In this embodiment, the blowing device 22 is a nozzle. First, the nozzle has strong directionality and precise action. The nozzle can precisely control the airflow direction and range of action through its shape and diameter, forming a concentrated airflow jet or a specific airflow field, which can target the gaps on the surface of the silicon wafer 100, avoiding ineffective losses caused by airflow diffusion. Second, the nozzle has high airflow velocity and controllable impact force. After the high-pressure airflow passes through the nozzle's constriction channel, the flow velocity is greatly increased, forming a strong impact force and efficiently completing the dust removal operation. In addition, the nozzle has a compact structure, flexible installation, and small size, and can be installed individually or in an array, adapting to the confined space of the production line.

[0040] In other alternative embodiments, the blowing device 22 may also adopt a blowing pipe, an air knife blowing structure or other structures that can realize airflow blowing, and no specific limitation is made here.

[0041] Optionally, the pulse frequency range of the pulsed airflow is 10Hz-200Hz. For example, the pulse frequency range of the pulsed airflow can be 10Hz, 20Hz, 30Hz, 40Hz, 50Hz, 60Hz, 70Hz, 80Hz, 90Hz, 100Hz, 110Hz, 120Hz, 130Hz, 140Hz, 150Hz, 160Hz, 170Hz, 180Hz, 190Hz, or 200Hz. By setting the pulse frequency of the pulsed airflow within the above range, the high-pressure airflow intermittently blows onto the silicon wafer 100 at a high frequency, making it easier to break down the particles 200 adhering to it, thereby achieving thorough dust removal and significantly improving the cleaning effect of particles 200 on the surface of the silicon wafer 100.

[0042] Optionally, the pressure range of the pulsed airflow can be 0.2MPa-2MPa, and more preferably 0.5MPa-1MPa. For example, the pressure range of the pulsed airflow can be 0.5MPa, 0.6MPa, 0.7MPa, 0.8MPa, 0.9MPa, or 1MPa. By setting the pressure range of the pulsed airflow within the above range, firstly, the cleaning intensity can be precisely controlled, improving the impurity removal efficiency and avoiding the problems of excessive high pressure damaging the silicon wafer 100 or incomplete cleaning under low pressure; secondly, the airflow state can be stabilized, ensuring cleaning uniformity. High pressure easily induces airflow turbulence, causing uneven local stress on the surface of the silicon wafer 100, while low pressure easily leads to uneven airflow diffusion, resulting in some areas being missed during cleaning. A reasonable and constant pressure can ensure consistent surface cleaning effect on the silicon wafer 100, improving product yield.

[0043] Optionally, the angle between the pulsed airflow direction and the vertical direction is 0°-60°, and more preferably 0°-45°. For example, the angle between the pulsed airflow direction and the vertical direction can be 0°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, or 45°. Properly setting the blowing angle is crucial for high-pressure airflow cleaning of the silicon wafer 100. A suitable angle allows the impact force of the airflow to be evenly distributed on the surface of the silicon wafer 100, avoiding potential airflow blind spots, optimizing the cleaning effect, and improving the impurity removal rate.

[0044] In this embodiment, as Figure 3 As shown, the angle between the jetting direction of the pulsed airflow and the vertical direction is 0°, and it is perpendicular to the silicon wafer 100. The airflow is sprayed perpendicularly onto the surface of the silicon wafer 100, which can uniformly cover the entire area of ​​the silicon wafer 100 without blind spots. The impact force of the airflow is more evenly distributed, avoiding the problems of weak edge airflow or uneven airflow superposition in the center that may occur with oblique jetting, thus improving the impurity removal rate.

[0045] Optionally, the vertical distance between the blowing device 22 and the silicon wafer 100 is 1cm-10cm, and more preferably 4cm-8cm. For example, the vertical distance between the blowing device 22 and the silicon wafer 100 can be 4cm, 5cm, 6cm, 7cm, or 8cm. It is understood that when the height of the blowing device 22 is too close to the silicon wafer 100, the airflow weakens and the impact force is too strong, which can easily cause the silicon wafer 100 to crack. When the height is too large, the airflow diffuses severely and the impact force is insufficient, making it impossible to effectively remove the particles 200 from the surface of the silicon wafer 100. Therefore, by setting the vertical distance between the blowing device 22 and the silicon wafer 100 within the above-mentioned range, the airflow impact force can be stably controlled, the cleaning effect optimized, and the impurity removal rate improved.

[0046] In an optional embodiment, such as Figure 3As shown, the dry cleaning equipment also includes a particle collection box 30, which is located below the conveying mechanism 10 and is used to collect the particles 200 that are sprayed. Without the particle collection box 30, the particles 200 generated during the cleaning of the silicon wafers 100 are easily blown away by the airflow to the surrounding area, and may adhere to the silicon wafers 100 in subsequent processes, or accumulate in the gaps of the equipment, leading to continuous secondary pollution and significantly reducing the cleaning pass rate. If the particles 200 diffuse into the air, they will also pollute the workshop environment and affect the product quality of other precision processes. Therefore, by setting the particle collection box 30 below the conveying mechanism 10, impurities can be collected in a concentrated manner, reducing the diffusion of particles 200, avoiding secondary pollution, and ensuring the cleaning effect and a clean production environment.

[0047] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A dry cleaning device, characterized in that, include: A conveying mechanism (10) is used to convey silicon wafers (100). The pulse jet blowing mechanism (20) includes a pulse generator (21) and a blowing device (22). The blowing device (22) is located above the conveying mechanism (10) and communicates with the pulse generator (21). The pulse generator (21) is used to provide a high-frequency, high-pressure pulse airflow to the blowing device (22) to blow particles (200) on the silicon wafer (100) through the blowing device (22).

2. The dry cleaning equipment according to claim 1, characterized in that, The pulse generating device (21) includes a gas supply structure (211), a pressurizing structure (212), and an electromagnetic pulse valve (213). The pressurizing structure (212) is connected to the gas supply structure (211), and the electromagnetic pulse valve (213) is connected between the pressurizing structure (212) and the jetting device (22).

3. The dry cleaning equipment according to claim 2, characterized in that, The electromagnetic pulse valve (213) is integrated on the blowing device (22) or connected to the blowing device (22) through the air guide pipe (23).

4. The dry cleaning equipment according to claim 1, characterized in that, The dry cleaning equipment also includes a particle collection box (30), which is located below the conveying mechanism (10) and is used to collect the sprayed particles (200).

5. The dry cleaning equipment according to claim 1, characterized in that, The pulse frequency range of the pulsed airflow is 10Hz-200Hz.

6. The dry cleaning equipment according to claim 1, characterized in that, The pressure range of the pulsed airflow is 0.2MPa-2MPa.

7. The dry cleaning equipment according to claim 1, characterized in that, The angle between the direction of the pulsed airflow and the vertical direction is 0°-60°.

8. The dry cleaning equipment according to claim 7, characterized in that, The angle between the blowing direction of the pulsed airflow and the vertical direction is 0°, and it is perpendicular to the silicon wafer (100).

9. The dry cleaning equipment according to claim 1, characterized in that, The vertical distance between the blowing device (22) and the silicon wafer (100) is 1cm-10cm.

10. The dry cleaning equipment according to claim 1, characterized in that, The blowing device (22) is a nozzle.

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