A sputter coating source device and a vacuum processing chamber

Abstract

The utility model belongs to vacuum processing technical field discloses a kind of sputtering coating source device and vacuum processing chamber.Two plane target plates are arranged along second direction and form a group of plane target materials;Magnetic assembly is corresponding with plane target plate and is arranged on the non-bombardment side of plane target plate with adjacent or interval, and magnetic assembly forms magnetic field on the bombardment side of plane target plate;Electricity component includes electrode plate, and after electrode plate is connected with power supply, electric field can be applied to plane target plate, so that the bombardment side of plane target plate forms electric field;Gas path component is arranged between two plane target plates.In the application, gas path component is arranged between two plane target plates, working gas is injected from the middle part of plane target material, instead of existing working gas injection from the peripheral area of target material, reduce the probability of working gas ionization and bombardment to other components in vacuum chamber, reduce the possibility of abnormal discharge, improve the film forming quality and yield of substrate.

Description

Technical Field

[0001] This utility model relates to the field of vacuum processing technology, and in particular to a sputtering coating source device and a vacuum processing chamber. Background Technology

[0002] In modern industrial manufacturing, sputtering coating technology, as an important surface treatment process, is widely used in various fields such as optical devices, electronic components, and decorative coatings. Sputtering coating refers to the process of bombarding the surface of a target material with high-energy particles (such as argon ions) in a vacuum environment, causing the target atoms or molecules to gain sufficient energy to detach from the surface and deposit onto the substrate to form a thin film. Its basic principle is to generate plasma through glow discharge, in which positive ions are accelerated under the influence of an electric field to bombard the target material, causing the target material to be sputtered. The sputtered particles migrate and condense on the substrate to form a film. This technology has advantages such as good film uniformity, strong adhesion, and a wide range of plating materials, which can meet the diverse performance requirements of different fields.

[0003] In existing technologies, argon is typically used as the sputtering working gas, and the argon gas path is usually located in the peripheral region of the target. The magnetic and electric field strengths in this region are significantly weaker compared to the front surface of the target. When argon is injected from the peripheral region of the target, some of the ionized argon ions, due to the weaker constraint of the magnetic and electric fields, are more likely to bombard the surfaces of other components within the vacuum chamber, such as the protective plate and chamber walls. This unintended bombardment process can lead to the generation of additional impurity particles within the chamber. These particles may escape during the sputtering process and deposit on the substrate surface, severely affecting the film deposition quality and yield, and potentially triggering abnormal discharge phenomena. Abnormal discharge can lead to unstable film deposition rates and may also cause defects such as pinholes and pitting on the film surface. Utility Model Content

[0004] The purpose of this invention is to provide a sputtering coating source device and a vacuum processing chamber to solve the problems in the prior art where argon ions are prone to deviating from their original predetermined trajectory due to insufficient magnetic field binding force, and thus bombard the surface of other components in the vacuum chamber; and some argon molecules fail to be fully ionized before reaching the target sputtering area, and when these neutral argon molecules collide with high-energy particles that escape during the target sputtering process, uncontrollable abnormal discharge phenomena will occur.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] On the one hand, a sputtering coating source device is provided, comprising:

[0007] A planar target plate, wherein the planar target plate extends along a first direction, and two planar target plates are arranged along a second direction to form a set of planar target materials;

[0008] A magnetic component, wherein the magnetic component is disposed on the non-bombardment side of the planar target plate in a one-to-one correspondence with the planar target plate and adjacent to or spaced apart from it, and the magnetic component forms a magnetic field on the bombardment side of the planar target plate;

[0009] An electrical component, comprising a grounding electrode plate, which, when connected to an external power source, can apply an electric field to the planar target plate, thereby creating an electric field on the bombardment side of the planar target plate;

[0010] A gas path assembly disposed between the two planar target plates to provide working gas to the bombardment side of the planar target plates.

[0011] As an optional technical solution for sputtering coating source device, the magnetic component includes a first magnet, a second magnet, and a third magnet. In the same magnetic component, the first magnet and the third magnet have the same polarity, and the second magnet has the opposite polarity to the first magnet and the third magnet.

[0012] For the same planar target plate, at least in a portion of the first direction, the first magnet and the third magnet are located on opposite sides of the second magnet in the second direction;

[0013] At least in a portion of the first direction, for two adjacent planar target plates, the polarities of the two magnets that are closest to each other in the second direction are opposite.

[0014] As an optional technical solution for sputtering coating source device, the gas path assembly includes a gas block, a vent screw, and a vent column. The gas block is disposed between the two planar target plates. The gas block has a gas path, and the vent column and the vent screw are respectively provided at both ends of the gas path. The vent column is used to introduce the working gas, and the exhaust port of the vent screw is located on the bombardment side to selectively release the working gas.

[0015] As an optional technical solution for sputtering coating source device, the gas path includes a main gas path, an inlet gas path and an outlet gas path. The inlet gas path is connected to the outlet gas path through the main gas path. The gas vent column is disposed at the end of the inlet gas path. The main gas path extends along the first direction. Multiple outlet gas paths are arranged at intervals along the first direction. Each outlet gas path end is provided with the vent screw.

[0016] As an optional technical solution for sputtering coating source device, the electrical component further includes a conductive copper block and a positioning copper block. The conductive copper block is disposed between the electrode plate and the magnetic component, and the positioning copper block is placed between the magnetic component and the planar target plate to conduct electricity between the electrode plate and the planar target plate and to position the magnetic component and the planar target plate.

[0017] As an optional technical solution for the sputtering coating source device, the sputtering coating source device further includes a cooling component, which includes a cooling copper plate disposed between the positioning copper block and the planar target plate. The cooling copper plate has a cooling channel formed inside along the first direction, and a flowing cooling liquid is disposed in the cooling channel to control the temperature of the planar target plate.

[0018] As an optional technical solution for the sputtering coating source device, the cooling assembly further includes an inlet pipe and an outlet pipe, wherein the inlet pipe is connected to one end of the cooling cavity and the outlet pipe is connected to the other end of the cooling cavity.

[0019] As an optional technical solution for sputtering coating source device, the cooling cavity, the water inlet pipe and the water outlet pipe are respectively provided in two sets and are spaced apart along the second direction.

[0020] As an optional technical solution for the sputtering coating source device, the sputtering coating source device further includes an insulating component, which includes a plurality of insulating blocks disposed on the non-bombardment side of the planar target plate and on the outer periphery of the magnetic component, the electrical component and the cooling component.

[0021] On the other hand, a vacuum processing chamber is provided, including the above-mentioned sputtering coating source device, wherein the sputtering coating source device is detachably disposed inside the vacuum processing chamber.

[0022] The beneficial effects of this utility model are:

[0023] This application discloses a sputtering coating source device and a vacuum processing chamber. The sputtering coating source device includes a planar target plate, a magnetic component, an electrical component, and a gas path component. The planar target plate extends along a first direction, and two planar target plates are arranged along a second direction to form a set of planar target materials. The magnetic component is disposed adjacent to or spaced apart from the planar target plate on the non-bombardment side of the planar target plate, and the magnetic component generates a magnetic field on the bombardment side of the planar target plate. The electrical component includes a grounding electrode plate, which can apply an electric field to the planar target plate after being connected to an external power source, so that an electric field is generated on the bombardment side of the planar target plate. The gas path component is disposed between the two planar target plates to provide working gas to the bombardment side of the planar target plate. In this application, two planar target plates are arranged along the second direction to form a set of planar target materials. The gas path assembly is disposed between the two planar target plates. The working gas is injected from the center of the planar target material instead of the existing method of injecting the working gas from the peripheral area of ​​the target material. This reduces the probability that the working gas will bombard other components in the vacuum chamber after ionization, thereby reducing the probability of generating additional impurity particles in the chamber, reducing the possibility of abnormal discharge, and improving the film formation quality and yield of the substrate. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0025] Figure 1 This is a first cross-sectional view of the sputtering coating source device provided in this embodiment of the present invention;

[0026] Figure 2 This is a second cross-sectional view of the sputtering coating source device provided in this embodiment of the present invention;

[0027] Figure 3 This is a third cross-sectional view of the sputtering coating source device provided in this embodiment of the present invention;

[0028] Figure 4 This is a partial structural cross-sectional view of the sputtering coating source device provided in this embodiment of the utility model;

[0029] Figure 5 This is a fourth cross-sectional view of the sputtering coating source device provided in this embodiment of the present invention.

[0030] In the picture:

[0031] 1. Vacuum processing chamber;

[0032] 10. Planar target plate;

[0033] 20. Magnetic component; 21. First magnet; 22. Second magnet; 23. Third magnet; 24. Magnet base;

[0034] 30. Electrical components; 31. Electrode plate; 32. Conductive copper block; 33. Positioning copper block;

[0035] 40. Air circuit assembly; 41. Air block; 410. Air circuit; 411. Air inlet circuit; 412. Main air circuit; 413. Air outlet circuit; 42. Vent screw; 43. Air vent post; 44. Sealing pin;

[0036] 50. Cooling components; 51. Cooling copper plate; 511. Cooling cavity; 52. Water inlet pipe; 53. Water outlet pipe;

[0037] 60. Insulating component; 61. Insulating board; 62. Insulating post; 63. Outer insulating block; 64. Inner insulating block;

[0038] 70. Bolts. Detailed Implementation

[0039] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0040] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0041] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0042] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0043] In existing technologies, the argon gas path is typically located on the periphery of the target material. This location is at the edge of the magnetic field confinement, where the magnetic field strength is significantly weaker compared to the front surface of the target. When argon is injected from the periphery, some of the ionized argon ions, due to insufficient magnetic field binding force, easily deviate from their intended trajectory and bombard the surfaces of other components within the vacuum chamber, such as the protective plate and chamber walls. This unintended bombardment process leads to the generation of additional impurity particles within the chamber. These particles escape during the sputtering process and deposit on the substrate surface, severely affecting the film deposition quality and yield, and potentially triggering abnormal discharge phenomena. Abnormal discharge can cause unstable thin film deposition rates and may also result in defects such as pinholes and pitting on the film surface.

[0044] Furthermore, since argon gas is injected from the side of the target, some argon molecules fail to be fully ionized before reaching the sputtering area of ​​the target. These unionized neutral argon molecules can lead to excessively high gas concentrations in local areas, affecting the uniformity of the discharge. In cases where the edge effect is aggravated, this will further exacerbate the instability of the discharge and affect the coating effect.

[0045] To address the aforementioned issues, this embodiment provides a vacuum processing chamber, including a sputtering coating source device, which is detachably disposed inside the vacuum processing chamber.

[0046] Specifically, see Figures 1-4 The sputtering deposition source device includes a planar target plate 10, a magnetic component 20, an electrical component 30, and a gas path component 40. The planar target plate 10 extends along a first direction, and two planar target plates 10 are arranged along a second direction to form a set of planar target materials. The magnetic component 20 is disposed adjacent to or spaced apart from the planar target plate 10 on the non-bombardment side of the planar target plate 10, and the magnetic component 20 forms a magnetic field on the bombardment side of the planar target plate 10. The electrical component 30 includes a receiving electrode plate 31, which, after being connected to an external power source, can apply an electric field to the planar target plate 10 to form an electric field on the bombardment side of the planar target plate 10. The gas path component 40 is disposed between the two planar target plates 10 to provide working gas to the bombardment side of the planar target plate 10. The working gas includes, but is not limited to, argon.

[0047] Two planar target plates 10 are arranged along the second direction to form a set of planar target materials. A gas path assembly 40 is disposed between the two planar target plates 10. Instead of injecting working gas from the center of the planar target material, this method reduces the probability of the ionized working gas bombarding other components within the vacuum chamber surrounding the planar target material. This reduces the likelihood of additional impurity particles being generated in the chamber, lowers the possibility of abnormal discharge, and improves the film deposition quality and yield of the substrate. In this embodiment, the first direction is the Z-axis direction, and the second direction is the X-axis direction.

[0048] Specifically, the magnetic component 20 includes a first magnet 21, a second magnet 22, and a third magnet 23. The first magnet 21 and the third magnet 23 in the same magnetic component 20 have the same polarity, and the second magnet 22 has the opposite polarity to the first magnet 21 and the third magnet 23. For the same planar target plate 10, at least in a portion of the first direction, the first magnet 21 and the third magnet 23 are located on both sides of the second magnet 22 in the second direction. At least in a portion of the first direction, for two adjacent planar target plates 10, the two magnets that are closest to each other in the second direction have opposite polarities.

[0049] It should be noted that each planar target plate 10 is provided with a corresponding magnetic component 20. Therefore, the two magnets closest to each other in the second direction between two adjacent planar target plates 10 can be the first magnet 21 of the two magnetic components 20, or the third magnet 23 of the two magnetic components 20, or the first magnet 21 of one magnetic component 20 and the third magnet 23 of another magnetic component 20. In this embodiment, the two magnets closest to each other in the second direction between two adjacent planar target plates 10 are the first magnet 21 and the third magnet 23. Preferably, the two magnets closest to each other in the second direction between two adjacent planar target plates 10 are configured to have opposite magnetic properties; when the polarities are opposite, it is beneficial to form a magnetic field parallel to the target plate surface between adjacent planar target plates 10, which is more conducive to binding electrons and generating more argon ions in this area, preventing argon ions from being ionized in other areas (especially in the area near the side guard plates of the target material), thereby avoiding argon ion bombardment of the guard plates.

[0050] In this embodiment, the first magnet 21, the second magnet 22, and the third magnet 23 are N50 grade strong magnetic neodymium iron boron magnets. The N50 grade strong magnetic neodymium iron boron magnet has a magnetic energy product of 50 and is one of the strongest permanent magnet materials currently available. Its coercivity ranges from 836kA / m to 1114kA / m, and it is not easy to demagnetize. Furthermore, strong magnetic neodymium iron boron magnets can be made into various shapes and sizes through different processing techniques, which makes it convenient for the sputtering coating source device to process different shapes and sizes according to different magnetic field distribution requirements.

[0051] Furthermore, the gas path assembly 40 includes a gas block 41, a vent screw 42, and a vent column 43. The gas block 41 is disposed between two planar target plates 10. The gas block 41 is provided with a gas path 410. The two ends of the gas path 410 are respectively provided with a vent column 43 and a vent screw 42. The vent column 43 is used to introduce working gas. The exhaust port of the vent screw 42 is located on the bombardment side to selectively release working gas.

[0052] The gas block 41 is placed between the two planar target plates 10 of the planar target material, and the gas passage 410 is set in the gas block 41, which replaces the existing method of arranging gas passages on both sides of the outer wall. The arrangement is compact and helps to save space. By adjusting the opening of the vent screw 42, argon gas can be used locally, and the flow rate and pressure of argon gas can be precisely controlled to prevent the pressure from rising suddenly due to excessive gas and affecting the quality of the film layer.

[0053] Specifically, the air passage 410 includes a main air passage 412, an air inlet passage 411, and an air outlet passage 413. The air inlet passage 411 is connected to the air outlet passage 413 through the main air passage 412. An air vent column 43 is provided at the end of the air inlet passage 411. The main air passage 412 extends along a first direction. Multiple air outlet passages 413 are arranged at intervals along the first direction. Each air outlet passage 413 is provided with a vent screw 42 at its end.

[0054] The main gas passage 412 extends along the first direction and is provided with multiple gas outlet passages 413 at intervals. This allows the argon gas to enter the main gas passage 412 from the gas inlet passage 411 of the gas block 41 when it is introduced from the gas column 43. The argon gas then enters the multiple gas outlet passages 413 from the main gas passage 412 and is finally released to the bombardment side from the exhaust port of the corresponding ventilation screw 42. This ensures that the released argon gas is evenly distributed and avoids local pressure fluctuations. If one gas outlet passage 413 is blocked, the other gas outlet passages 413 can still maintain the argon gas supply to prevent the coating from being interrupted.

[0055] Optionally, the gas path assembly 40 also includes a sealing pin 44, which is disposed in the main gas path 412 to block and divide the main gas path 412 into multiple segments. Multiple air intake paths 411 are arranged at intervals along the first direction, and each air intake path 411 is connected to multiple air outlet paths 413 through a corresponding segment of the main gas path 412.

[0056] By using sealing pins 44 to block and divide the main gas path 412 into multiple sections, and connecting each section of the main gas path 412 to an inlet path 411 and multiple outlet paths 413, the argon flow rate of each section of the main gas path 412 can be adjusted independently, realizing zoned control for easy local adjustment, and achieving dynamic balance of gas distribution in multiple areas. This avoids the uneven argon flow rate caused by traditional single paths and also avoids the impact of a long main gas path 412 on the uniform release of argon. Even if a section of the main gas path 412 leaks or becomes blocked, the sealing pins 44 can isolate the faulty section, reducing maintenance costs.

[0057] In this embodiment, the main air passage 412 extends along the first direction and penetrates the air block 41. The air inlet passage 411 and the air outlet passage 413 both extend along the third direction. The number of air inlet passages 411 is less than the number of air outlet passages 413. The third direction is the Y-axis direction. The first direction, the second direction and the third direction are perpendicular to each other.

[0058] Furthermore, the electrical component 30 also includes a conductive copper block 32 and a positioning copper block 33. The conductive copper block 32 is disposed between the electrode plate 31 and the magnet base 24, and the positioning copper block 33 is placed between the magnetic component 20 and the planar target plate 10 to conduct electricity between the electrode plate 31 and the planar target plate 10 and to position the magnetic component 20 and the planar target plate 10. Specifically, the conductive copper block 32 is made of pure copper of grade T3 or higher, which has high conductivity and thermal conductivity, facilitating the transmission of current between the electrode plate 31 and the magnet base 24; the positioning copper block 33 is made of C1020 copper, with a thermal conductivity of 113 W / (mk), which is higher than that of pure copper. Since the positioning copper block 33 also serves as a positioning component for both the magnetic component 20 and the planar target plate 10, there is a possibility of thermal expansion deformation. However, since C1020 copper has a moderate coefficient of thermal expansion, it can better suppress the occurrence of thermal deformation. In this embodiment, the electrode plate 31 is L-shaped, and its short arm is connected to the conductive copper block 32 by fasteners. The conductive copper block 32 and the magnet base 24 can be connected by fasteners.

[0059] Furthermore, the magnetic component 20 also includes a magnet base 24, which extends along a first direction. The first magnet 21, the second magnet 22, and the third magnet 23 are all disposed on the magnet base 24. In this embodiment, the magnet base 24 can be made of a non-ferromagnetic metal material with conductive properties, such as copper or aluminum. Specifically, the first magnet 21, the second magnet 22, and the third magnet 23 can be glued to the magnet base 24 or connected by fasteners; no limitation is imposed here.

[0060] It should be noted that in this embodiment, the first magnet 21, the second magnet 22, and the third magnet 23 will all be charged under the action of the electrode plate 31 and the magnet base 24, but the charging of the first magnet 21, the second magnet 22, and the third magnet 23 will not affect their magnetism.

[0061] In this embodiment, high-frequency alternating current (such as radio frequency alternating current or intermediate frequency alternating current) is applied to the electrode plate 31. The high-frequency alternating current causes the electrical charge of the two planar target plates 10 in a set of planar target materials to alternate periodically. The magnetic field above the planar target plate 10 can capture the free electrons in the electric field, causing them to move in a spiral motion. When argon gas is introduced into the vacuum processing chamber 1, the free electrons will collide with neutral argon gas molecules during their movement, ionizing the neutral argon gas molecules into positive argon ions and free electrons. Since the argon ions are positively charged, and the two planar target plates 10 are alternately negatively charged, the argon ions will bombard the planar target plate 10 that is negatively charged at the time under the action of the electric field, causing the particles on the target material to be sputtered out and reach the substrate surface to form a film layer.

[0062] Furthermore, since the planar target plate 10 requires heat dissipation and the magnetism of the neodymium iron boron magnet is negatively correlated with its heat resistance, and magnetic field fluctuations can affect the film formation quality of the substrate, therefore, refer to... Figure 5The sputtering coating source device also includes a cooling assembly 50, which includes a cooling copper plate 51 disposed between the positioning copper block 33 and the planar target plate 10. A cooling cavity 511 is formed inside the cooling copper plate 51 along a first direction, and a flowing cooling liquid is disposed within the cooling cavity 511 to control the temperature of the planar target plate 10. Specifically, the cooling copper plate 51 and the planar target plate 10 are screwed or glued together.

[0063] Specifically, the cooling assembly 50 also includes an inlet pipe 52 and an outlet pipe 53. The inlet pipe 52 is connected to one end of the cooling cavity 511, and the outlet pipe 53 is connected to the other end of the cooling cavity 511. Specifically, the inlet pipe 52 is connected to the top of the cooling cavity 511, and the outlet pipe 53 is connected to the bottom of the cooling cavity 511.

[0064] In this embodiment, two sets of cooling channels 511, inlet pipes 52, and outlet pipes 53 are provided and spaced apart along the second direction to improve the heat dissipation rate of the planar target plate 10 and the magnetic component 20. Specifically, the cooling liquid can be condensate, antifreeze, or mineral oil. Since the cooling liquid is prior art, it will not be described in detail here.

[0065] Furthermore, the sputtering coating source device also includes an insulating component 60, which comprises multiple insulating blocks disposed on the non-bombardment side of the planar target plate 10 and on the outer periphery of the magnetic component 20, the electrical component 30, and the cooling component 50. Specifically, the insulating component 60 includes an insulating plate 61, and the magnet base 24 is fixed to the side wall of the vacuum processing chamber 1 by bolts 70. The insulating plate 61 is disposed between the side wall of the vacuum processing chamber 1 and the magnet base 24 and the positioning copper block 33 to prevent the side wall of the vacuum processing chamber 1 from becoming charged.

[0066] Specifically, the insulating plate 61 is made of Teflon material. Specifically, the insulating assembly 60 includes an insulating post 62, which is disposed between the side wall of the vacuum processing chamber 1 and the magnet base 24. The bolt 70 passes through the side wall of the vacuum processing chamber 1 and the insulating post 62 and is screwed to the magnet base 24.

[0067] Furthermore, the insulating assembly 60 also includes an outer insulating block 63 and an inner insulating block 64. The outer insulating block 63 is disposed on the outer side of the positioning copper block 33, the cooling copper plate 51, and the planar target plate 10 along the second direction, and the inner insulating block 64 is disposed on the inner side of the positioning copper block 33, the cooling copper plate 51, and the planar target plate 10 along the second direction. The insulating plate 61, the outer insulating block 63, and the inner insulating block 64 abut against each other to form an insulating circuit. In this embodiment, the air block 41 is placed between the inner insulating blocks 64 of the two planar target plates 10.

[0068] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A sputtering coating source device, characterized in that, include: A planar target plate (10) extends along a first direction, and two planar target plates (10) are arranged along a second direction to form a set of planar target materials; Magnetic component (20), the magnetic component (20) is one-to-one with the planar target plate (10) and is disposed adjacent to or spaced apart on the non-bombardment side of the planar target plate (10), the magnetic component (20) forms a magnetic field on the bombardment side of the planar target plate (10); An electrical component (30) includes a receiving electrode plate (31), which, when connected to an external power source, can apply an electric field to the planar target plate (10) to form an electric field on the bombardment side of the planar target plate (10). Gas path assembly (40) is disposed between the two planar target plates (10) to provide working gas to the bombardment side of the planar target plates (10).

2. The sputtering coating source apparatus according to claim 1, characterized in that, The magnetic component (20) includes a first magnet (21), a second magnet (22) and a third magnet (23). In the same magnetic component (20), the first magnet (21) and the third magnet (23) have the same polarity, and the second magnet (22) has the opposite polarity to the first magnet (21) and the third magnet (23). For the same planar target plate (10), at least in a portion of the first direction, the first magnet (21) and the third magnet (23) are located on opposite sides of the second magnet (22) in the second direction; At least in a portion of the first direction, for two adjacent planar target plates (10), the polarities of the two magnets that are closest to each other in the second direction are opposite.

3. The sputtering coating source apparatus according to claim 1, characterized in that, The gas path assembly (40) includes a gas block (41), a vent screw (42), and a gas vent column (43). The gas block (41) is disposed between the two planar target plates (10). The gas block (41) is provided with a gas path (410). The gas path (410) is provided with the gas vent column (43) and the vent screw (42) at both ends. The gas vent column (43) is used to introduce the working gas. The exhaust port of the vent screw (42) is located on the bombardment side to selectively release the working gas.

4. The sputtering coating source apparatus according to claim 3, characterized in that, The air passage (410) includes a main air passage (412), an air inlet passage (411), and an air outlet passage (413). The air inlet passage (411) is connected to the air outlet passage (413) through the main air passage (412). The air vent column (43) is provided at the end of the air inlet passage (411). The main air passage (412) extends along the first direction. Multiple air outlet passages (413) are arranged at intervals along the first direction. Each air outlet passage (413) is provided with a vent screw (42) at its end.

5. The sputtering coating source apparatus according to claim 1, characterized in that, The electrical component (30) further includes a conductive copper block (32) and a positioning copper block (33). The conductive copper block (32) is disposed between the electrode plate (31) and the magnetic component (20), and the positioning copper block (33) is placed between the magnetic component (20) and the planar target plate (10) to conduct electricity between the electrode plate (31) and the planar target plate (10) and to position the magnetic component (20) and the planar target plate (10).

6. The sputtering coating source apparatus according to claim 5, characterized in that, The sputtering coating source device further includes a cooling component (50), which includes a cooling copper plate (51). The cooling copper plate (51) is disposed between the positioning copper block (33) and the planar target plate (10). A cooling cavity (511) is formed inside the cooling copper plate (51) along the first direction. A flowing cooling liquid is provided in the cooling cavity (511) to control the temperature of the planar target plate (10).

7. The sputtering coating source apparatus according to claim 6, characterized in that, The cooling assembly (50) also includes an inlet pipe (52) and an outlet pipe (53), the inlet pipe (52) being connected to one end of the cooling cavity (511), and the outlet pipe (53) being connected to the other end of the cooling cavity (511).

8. The sputtering coating source apparatus according to claim 7, characterized in that, The cooling cavity (511), the water inlet pipe (52) and the water outlet pipe (53) are provided in two sets and are spaced apart along the second direction.

9. The sputtering coating source apparatus according to any one of claims 6-8, characterized in that, The sputtering coating source device further includes an insulating component (60), which includes a plurality of insulating blocks disposed on the non-bombardment side of the planar target plate (10) and on the outer periphery of the magnetic component (20), the electrical component (30) and the cooling component (50).

10. A vacuum processing chamber, characterized in that, Includes the sputtering coating source device as described in any one of claims 1-9, wherein the sputtering coating source device is detachably disposed inside the vacuum processing chamber.

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