A medium thin film deposition apparatus with uniform heating

Abstract

The utility model relates to thin film deposition technical field discloses a kind of medium thin film deposition equipment of uniform heating, including equipment main body box, the equipment main body box front side is rotatably connected with open and close closure door, the open and close closure door middle part is equipped with the observation window with transparent glass, the equipment main body box bottom is fixedly connected with support frame, the equipment main body box bottom wall middle part is fixedly connected with rotating placement assembly, the equipment main body box inside is fixedly connected with two isolating plates, one the isolating plate side is provided with temperature control component, another the isolating plate side is fixedly connected with cooling exhaust component, the equipment main body box top wall is fixedly connected with closed processing component, the equipment main body box side is equipped with connecting gap, through the double temperature control logic of heat radiation generated by solid carrier heat conduction cooperation heating gas heat convection, make up the short board of single heating mode, reduce the heat exchange of carrier and cavity wall, prolong core component life.

Description

Technical Field

[0001] This utility model belongs to the field of thin film deposition technology, specifically, it relates to a dielectric thin film deposition device with uniform heating. Background Technology

[0002] Dielectric thin film deposition is the process of depositing gaseous or solid materials onto a substrate surface using physical or chemical methods to form an insulating thin film. Its functions include serving as an insulating layer between circuits to prevent cross-diffusion and leakage between semiconductor core components, improving circuit reliability; acting as a protective film to protect chips from external impacts; and also serving as an isolation film to prevent unremovable parts from being etched during the etching process. Dielectric thin film deposition equipment is used to deposit an insulating dielectric thin film on a substrate surface and is widely used in semiconductor, photovoltaic, and other fields. Traditional dielectric thin film deposition equipment mainly adopts a solid temperature transmission structure, relying on the heat conduction path of heating elements and solid carriers (such as graphite disks and quartz bases) to achieve temperature control. If there are processing errors in the carrier or heating area, or if it deforms after long-term use, it can easily lead to a large temperature difference between the edge and center of the substrate, affecting the processing quality.

[0003] In view of this, this utility model is proposed. Utility Model Content

[0004] The purpose of this invention is to provide a dielectric thin film deposition device with uniform heating, to solve the problem mentioned in the background art that traditional dielectric thin film deposition devices mainly adopt solid temperature transmission structures, relying on the heat conduction path of heating elements and solid carriers (such as graphite disks and quartz bases) to achieve temperature control. If there are processing errors in the carrier or heating area, or deformation after long-term use, it is easy to cause a large temperature difference between the edge and center of the substrate, affecting the processing quality. The basic concept of the technical solution adopted by this invention is as follows: A dielectric thin film deposition apparatus with uniform heating is disclosed. The apparatus includes a main body housing. A rotatable door is rotatably connected to one side of the front of the main body housing. An observation window with transparent glass is located in the center of the rotatable door. A support frame is fixedly connected to the bottom of the main body housing. A rotating placement assembly is fixedly connected to the center of the bottom wall of the main body housing. Two isolation plates are symmetrically fixedly connected inside the main body housing. One isolation plate has a temperature control assembly on its side, and the other isolation plate has a cooling exhaust assembly fixedly connected to its side. A closed processing assembly is fixedly connected to the top wall of the main body housing. A connection notch is provided on the side of the main body housing. The apparatus employs a dual temperature control logic—solid carrier heat conduction combined with heating gas heat convection to generate heat radiation—to compensate for the shortcomings of a single heating method, reduce heat exchange between the carrier and the cavity wall, reduce carrier loss, extend the lifespan of core components, and ensure more uniform heating and guaranteed heating quality.

[0005] Preferably, the rotating placement assembly includes a drive motor, which is fixedly connected to the center of the bottom of the main body of the equipment. A placement base is fixedly connected to the middle of the bottom wall of the main body of the equipment, and a ceramic disc is fixedly connected to the top of the placement base. This provides a stable support base and placement area for the wafer placement.

[0006] Preferably, the temperature control component includes a pipe heater, which is fixedly connected to the side of an isolation plate. One side of the pipe heater is connected to a gas supply connector, and a controller is fixedly installed on the front of the pipe heater. Two internal heaters are fixedly installed on the side of the controller away from the pipe heater. Both internal heaters are connected to a power supply detection line. The other side of the pipe heater is connected to multiple sets of air inlet pipes for auxiliary heating with gas to improve heating uniformity.

[0007] Preferably, the cooling exhaust assembly includes multiple sets of exhaust pipes, which are fixedly connected inside the isolation plate. Each set of exhaust pipes is connected to a one-way valve on its outer side. An integrated gas supply pipe is connected to the end of each exhaust pipe. A cooling box is connected to the side of the integrated gas supply pipe away from the exhaust pipe. An output pipe is connected to the top of the cooling box. The output pipe extends through the top wall of the main body of the equipment, so that the gas is discharged after cooling, reducing the risk of processing.

[0008] Preferably, the enclosed processing assembly includes an explosion-proof telescopic cylinder, which is fixedly connected to the middle of the top wall of the main body of the equipment. A processing pipe is fixedly connected to the bottom of the explosion-proof telescopic cylinder. An air circulation cavity is opened inside the processing pipe. Multiple internal heating wires are fixedly embedded at equal intervals inside the processing pipe and the ceramic plate. The internal heating wires and the ceramic plate are electrically connected to the power supply detection line to form a stable solid heat conduction heating method.

[0009] Preferably, a sealing convex ring is fixedly connected to the bottom end of the processing pipe, and the sealing convex ring and the matching sealing ring seat are connected to form a seal in the processing area.

[0010] Compared with the prior art, the beneficial effects of this utility model are: This device, through its designed pipeline heater, gas supply connector, connection notch, internal heater, power supply detection circuit, controller, explosion-proof telescopic cylinder, processing pipeline, air inlet pipe, exhaust pipe, air circulation chamber, internal heating wire, one-way valve, integrated gas delivery pipe, cooling box, and output pipe, provides stable basic temperature control through a solid carrier. The heated gas can assist the solid carrier in quickly conducting heat and regulating temperature, performing temperature compensation, significantly shortening the process cycle, adapting to mass production scenarios, eliminating local temperature fluctuations, stabilizing film quality, avoiding waste heat from exhaust gas from interfering with the deposition environment, and preventing external safety accidents caused by high-temperature exhaust.

[0011] The specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings. Attached Figure Description

[0012] In the attached diagram: Figure 1 This is a three-dimensional structural diagram of the present invention; Figure 2 This is a schematic diagram of the internal structure of the main body box of the device of this utility model; Figure 3 This is a schematic diagram of the internal structure of the processing pipe of this utility model; Figure 4 This utility model Figure 2 A magnified view of the structure at point A in the middle; Figure 5 This utility model Figure 3 A magnified schematic diagram of the structure at point B in the middle.

[0013] In the diagram: 1. Main equipment box; 2. Opening and closing door; 3. Observation window; 4. Support frame; 5. Drive motor; 6. Placement base; 7. Isolation plate; 8. Pipe heater; 9. Air supply connector; 10. Connection notch; 11. Internal heater; 12. Power supply detection line; 13. Controller; 14. Explosion-proof telescopic cylinder; 15. Processing pipe; 16. Air inlet pipe; 17. Exhaust pipe; 18. Air circulation chamber; 19. Internal heating wire; 20. Placement ceramic plate; 21. One-way valve; 22. Integrated air supply pipe; 23. Cooling box; 24. Output pipe; 25. Sealing convex ring; 26. Matching sealing ring seat. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments will be clearly and completely described below with reference to the accompanying drawings. The following embodiments are used to illustrate this utility model.

[0015] Please see Figure 1-5 This utility model provides a dielectric thin film deposition device with uniform heating, including a main body box 1. A rotatable door 2 is rotatably connected to one side of the front of the main body box 1. The rotatable door 2 is used to seal the processing environment and improve processing safety. An observation window 3 with transparent glass is opened in the middle of the rotatable door 2 to facilitate observation of the internal environment. A support frame 4 is fixedly connected to the bottom of the main body box 1. A rotating placement component is fixedly connected to the middle of the bottom wall of the main body box 1. Two isolation plates 7 are symmetrically fixedly connected inside the main body box 1. A temperature control component is set on the side of one isolation plate 7, and a cooling exhaust component is fixedly connected to the side of the other isolation plate 7. A sealing processing component is fixedly connected to the top wall of the main body box 1. A connection notch 10 is opened on the side of the main body box 1 to provide an installation channel for external gas supply pipelines and power supply lines.

[0016] Furthermore, the rotating placement assembly includes a drive motor 5, which is fixedly connected to the center of the bottom of the main body box 1. A placement base 6 is fixedly connected to the middle of the bottom wall of the main body box 1, and a placement ceramic disk 20 is fixedly connected to the top of the placement base 6. The drive motor 5 is a high-temperature resistant explosion-proof motor with a reducer. The placement ceramic disk 20 is used to place the wafer body. The drive motor 5 and the controller 13 are connected through a signal power supply line. When the drive motor 5 runs, it drives the placement ceramic disk 20 to rotate, so that the wafer body rotates and comes into uniform contact with the internal gas.

[0017] Furthermore, the temperature control component includes a pipe heater 8, which is fixedly connected to the side of an isolation plate 7. One side of the pipe heater 8 is connected to an air supply connector 9. A controller 13 is fixedly installed on the front of the pipe heater 8, which can realize multi-line control type control. Two internal heaters 11 are fixedly installed on the side of the controller 13 away from the pipe heater 8. Both internal heaters 11 are connected to a power supply detection line 12. The power supply detection line 12 mainly consists of a temperature sensing line, a temperature sensing terminal and a power supply terminal, which detects the temperature inside the processing pipe 15, the air circulation chamber 18 and the ceramic plate 20, so as to facilitate control by the controller 13. The other side of the pipe heater 8 is connected to multiple sets of air inlet pipes 16. Before use, the air supply connector 9 is connected to an external air supply component to provide a stable air intake. After the air is heated by the pipe heater 8, it enters the air circulation chamber 18 opened inside the processing pipe 15. The device requires a certain amount of preheating and testing before use.

[0018] Furthermore, the cooling exhaust assembly includes multiple sets of exhaust pipes 17, which are fixedly connected inside the isolation plate 7. Each set of exhaust pipes 17 is connected to a one-way valve 21 on its outer side. An integrated air supply pipe 22 is connected to the end of the exhaust pipe 17. A cooling box 23 is connected to the side of the integrated air supply pipe 22 away from the exhaust pipe 17. An output pipe 24 is connected to the top of the cooling box 23. The output pipe 24 extends through the top wall of the main body box 1 of the equipment. Air enters the exhaust pipe 17 after passing through the air circulation chamber 18. The air inside the exhaust pipe 17 enters the cooling box 23 through the one-way valve 21 and the integrated air supply pipe 22. The cooled air is discharged through the output pipe 24.

[0019] Furthermore, the enclosed processing assembly includes an explosion-proof telescopic cylinder 14, which is fixedly connected to the middle of the top wall of the main body box 1 of the equipment. The bottom end of the explosion-proof telescopic cylinder 14 is fixedly connected to a processing pipe 15, and the top end of the processing pipe 15 is connected to multiple connecting joints, which are mainly used to extract air from the processing pipe 15 and pass the gas required for processing. An air circulation cavity 18 is opened inside the processing pipe 15. Multiple internal heating wires 19 are fixedly embedded at equal intervals inside the processing pipe 15 and the ceramic plate 20. The internal heating wires 19 are controlled by two internal heaters 11, so that the internal heating wires 19 can be heated at a controllable temperature to preheat the processing pipe 15 and the ceramic plate 20. The internal heating wires 19 and the ceramic plate 20 are electrically connected to the power supply detection line 12 and are uniformly controlled by the controller 13.

[0020] Furthermore, a sealing protrusion 25 is fixedly connected to the bottom end of the processing pipe 15. The sealing protrusion 25 and the mating sealing ring seat 26 are connected to form a sealing structure between the processing pipe 15 and the placement base 6.

[0021] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A dielectric thin film deposition apparatus with uniform heating, comprising a main body housing (1), characterized in that: The main body of the equipment (1) is rotatably connected to an opening and closing door (2) on one side of the front. An observation window (3) with transparent glass is provided in the middle of the opening and closing door (2). A support frame (4) is fixedly connected to the bottom of the main body of the equipment (1). A rotating placement component is fixedly connected to the middle of the bottom wall of the main body of the equipment (1). Two isolation plates (7) are symmetrically fixedly connected inside the main body of the equipment (1). A temperature control component is provided on the side of one isolation plate (7). A cooling exhaust component is fixedly connected on the side of the other isolation plate (7). A closed processing component is fixedly connected to the top wall of the main body of the equipment (1). A connection notch (10) is provided on the side of the main body of the equipment (1).

2. The dielectric thin film deposition apparatus with uniform heating according to claim 1, characterized in that, The rotating placement assembly includes a drive motor (5), which is fixedly connected to the center of the bottom of the main body box (1). A placement base (6) is fixedly connected to the middle of the bottom wall of the main body box (1), and a ceramic plate (20) is fixedly connected to the top of the placement base (6).

3. The dielectric thin film deposition apparatus with uniform heating according to claim 1, characterized in that, The temperature control component includes a pipe heater (8), which is fixedly connected to the side of an isolation plate (7). One side of the pipe heater (8) is connected to a gas supply connector (9). A controller (13) is fixedly installed on the front of the pipe heater (8). Two internal heaters (11) are fixedly installed on the side of the controller (13) away from the pipe heater (8). Both internal heaters (11) are connected to a power supply detection line (12). The other side of the pipe heater (8) is connected to multiple sets of air inlet pipes (16).

4. The dielectric thin film deposition apparatus with uniform heating according to claim 1, characterized in that, The cooling exhaust assembly includes multiple sets of exhaust pipes (17), which are fixedly connected inside the isolation plate (7). Each set of exhaust pipes (17) is connected to a one-way valve (21) on its outer side. An integrated gas supply pipe (22) is connected to the end of the exhaust pipe (17). A cooling box (23) is connected to the side of the integrated gas supply pipe (22) away from the exhaust pipe (17). An output pipe (24) is connected to the top of the cooling box (23). The output pipe (24) extends through the top wall of the main body box (1) of the equipment.

5. The dielectric thin film deposition apparatus for uniform heating according to claim 1, characterized in that, The enclosed processing assembly includes an explosion-proof telescopic cylinder (14), which is fixedly connected to the middle of the top wall of the main body box (1) of the equipment. A processing pipe (15) is fixedly connected to the bottom of the explosion-proof telescopic cylinder (14). An air circulation cavity (18) is opened inside the processing pipe (15). Multiple internal heating wires (19) are fixedly embedded at equal intervals inside the processing pipe (15) and the ceramic plate (20). The internal heating wires (19) and the ceramic plate (20) are electrically connected to the power supply detection line (12) respectively.

6. The dielectric thin film deposition apparatus for uniform heating according to claim 5, characterized in that, The bottom end of the processing pipe (15) is fixedly connected to a sealing protrusion (25), and the sealing protrusion (25) and the matching sealing ring seat (26) are connected in a matching manner.

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