A vacuum interlock system based on stm-mbe

Abstract

The utility model provides a kind of vacuum interlocking system based on STM-MBE, the vacuum interlocking system includes sequentially butted and isolated STM observation chamber, vacuum sample transmission chamber and MBE growth chamber;STM needle tip is equipped in MBE growth chamber, STM needle tip surface has wrapping layer, and wrapping layer is obtained by passing into metal source deposition into MBE growth chamber;Substrate sample is equipped in MBE growth chamber, and STM needle tip and substrate sample in MBE growth chamber can be transmitted to STM observation chamber by vacuum sample transmission chamber;Voltage pulse module coupled with STM needle tip is equipped in STM observation chamber, and voltage pulse module is used to generate pulse signal, so that the wrapping layer deposited on the surface of STM needle tip is deposited on substrate sample in the form of nanometer point.This vacuum interlocking system not only provides in-situ deposition ultra-high vacuum environment for metal source, avoids introducing impurities, but also can realize controllable nanometer deposition of metal source, fully guarantees its electrical / quantum performance.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material preparation, and in particular to a vacuum interconnect system based on STM-MBE. Background Technology

[0002] In the fields of nanoelectronics and quantum devices, precisely controlling the size, position, and composition of metallic nanostructures (such as nanodots) is a core technological challenge. Gallium metal has a low melting point (29.8℃) and high fluidity, making it an ideal nanofluid material, but there is still no mature solution for its controllable deposition and shaping in a vacuum environment.

[0003] In traditional techniques, gallium metal is typically deposited on a substrate using the following methods.

[0004] 1. Solution deposition of gallium metal is employed, but it is difficult to apply in ultra-high vacuum environments. This not only poses risks of contamination (such as oxidation and carbon residue), but also makes it difficult to achieve nanoscale deposition of gallium metal.

[0005] 2. Nanostructures can be deposited using vapor deposition methods (such as chemical vapor deposition), but thermal effects exist, which can lead to substrate damage and insufficient spatial resolution (micrometer level), making it difficult to achieve nanoscale deposition of gallium metal.

[0006] 3. Electrodeposition is performed using STM (Scanning Tunneling Microscope), but this usually requires an electrolyte environment, is incompatible with vacuum processes, and limits the choice of materials.

[0007] Existing deposition techniques not only struggle to achieve nanoscale deposition of gallium metal, but also introduce impurities due to the easy oxidation of gallium metal, affecting electrical / quantum performance through non-in-situ operations.

[0008] This utility model solves at least one of the above problems. Summary of the Invention

[0009] To address the problems existing in the background technology, this utility model provides a vacuum interconnect system based on STM-MBE to achieve in-situ deposition of nanodots of metal sources.

[0010] The objective of this utility model is achieved through the following technical solution: This invention provides a vacuum interconnection system based on STM-MBE, comprising an STM observation chamber, a vacuum sample transfer chamber, and an MBE growth chamber that are sequentially docked and isolated. The MBE growth chamber is equipped with an STM tip, and the surface of the STM tip has a coating layer, which is obtained by depositing a metal source into the MBE growth chamber. The MBE growth chamber contains a substrate sample, and the STM tip and the substrate sample in the MBE growth chamber can be transferred to the STM observation chamber through the vacuum sample transfer chamber. The STM observation chamber is equipped with a voltage pulse module coupled to the STM tip. The voltage pulse module is used to generate a pulse signal so that the coating layer deposited on the surface of the STM tip is deposited onto the substrate sample in the form of nanodots.

[0011] In some possible implementations, a first sample transfer rod is provided in the MBE growth chamber. The first sample transfer rod is configured to pick up the STM tip and the substrate sample placed in the MBE growth chamber, and move the STM tip and the substrate sample from the MBE growth chamber to the vacuum sample transfer chamber along a first direction, respectively. The STM observation chamber is provided with a second sample transfer rod, which is configured to grab the STM tip and the substrate sample placed in the vacuum sample transfer chamber, and move the STM tip and the substrate sample from the vacuum sample transfer chamber to the STM observation chamber along the first direction.

[0012] In some possible implementations, sample holders are provided in the chambers of the STM observation chamber, the vacuum sample transfer chamber, and the MBE growth chamber, respectively. The sample holders are configured to hold the STM tip and the substrate sample and are movable in a second direction within their respective chambers; the second direction is perpendicular to the first direction. The movement path of the sample holder in the second direction intersects with the movement paths of the first sample transfer rod and the second sample transfer rod in the first direction, so that the first sample transfer rod and the second sample transfer rod can pick up the STM tip and the substrate sample from the sample holder.

[0013] In some possible implementations, the MBE growth chamber is provided with a film thickness gauge configured to move within the MBE growth chamber along the first direction, the film thickness gauge being used to monitor in real time the growth thickness of the coating layer during the deposition of the metal source on the surface of the STM tip.

[0014] In some possible implementations, both the first and second sample transfer rods are magnetically coupled sample transfer rods.

[0015] In some possible implementations, a temperature control device is also provided in the MBE growth chamber for controlling the temperature of the substrate sample.

[0016] In some possible implementations, the chamber of the MBE growth chamber is connected to a first vacuum pump, which is used to regulate the vacuum level within the MBE growth chamber. And / or, the vacuum sample transfer chamber is connected to a second vacuum pump, which is used to regulate the vacuum level within the vacuum sample transfer chamber; And / or, the STM observation chamber is connected to a third vacuum pump, which is used to regulate the vacuum level inside the STM observation chamber.

[0017] In some possible implementations, the STM observation chamber is isolated from the vacuum transfer chamber by a first vacuum valve, and the vacuum transfer chamber is isolated from the MBE growth chamber by a second vacuum valve.

[0018] In some possible implementations, the STM observation chamber is equipped with a scanning head connected to the STM tip, the scanning head being used to drive the STM tip to perform three-dimensional nanoscale displacement within the STM observation chamber.

[0019] In some possible implementations, the metal source is made of indium, tin, or gallium; And / or, the diameter of the nanodots is 5 nm to 50 nm.

[0020] The beneficial effects of this invention are as follows: First, by introducing a metal source to the surface of the STM tip in the MBE growth chamber, atomic-level precision thin film deposition is achieved to form an encapsulation layer. Then, a vacuum transfer chamber facilitates the transfer of the STM tip and substrate sample from the MBE growth chamber to the STM observation chamber, avoiding contamination and oxidation of the metal source. Finally, a voltage pulse module within the STM observation chamber applies pulse signals to the STM tip and substrate sample, enabling nanoscale manipulation of the encapsulation layer and inducing its deposition onto the substrate sample in the form of nanodots. This vacuum interconnect system not only provides an ultra-vacuum environment for in-situ deposition of the metal source, avoiding the introduction of impurities, but also enables controllable nanoscale deposition of the metal source, fully guaranteeing its electrical / quantum properties. Attached Figure Description

[0021] Figure 1 A schematic diagram of the structure of an embodiment of the vacuum interconnection system based on STM-MBE provided by this utility model; Figure 2 This is a schematic diagram showing the relationship between the STM tip and the substrate sample before nanodot deposition in the STM observation chamber. Figure 3 This is a schematic diagram showing the relationship between the STM tip and the substrate sample during nanodot deposition in the STM observation chamber.

[0022] In the figure: 1. MBE growth chamber; 2. STM observation chamber; 3. Vacuum transfer chamber; 4. Evaporation equipment; 41. Baffle; 5. First transfer rod; 6. Second transfer rod; 7. First vacuum valve; 8. Second vacuum valve; 10. STM tip; 20. Encapsulation layer; 200. Nanoparticle; 30. Substrate sample; 40. Metal source. Detailed Implementation

[0023] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore repeated descriptions of them will be omitted.

[0024] The terms used to describe position and direction in this utility model are illustrated with the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this utility model.

[0025] Because MBE (Molecular Beam Epitaxy) systems can operate in ultra-high vacuum (e.g., vacuum level <10⁻⁶), -10 While atomic-level precision thin film deposition can be achieved using pulsed deposition (PDR), in-situ characterization capabilities are lacking. STM systems offer atomic resolution and nanoscale manipulation, but traditional STM tip modification requires atmospheric exposure, introducing contamination and oxidation. Traditional STM tip modification and nanostructure thin film deposition experiments must be performed in different devices; atmospheric exposure leads to interface contamination (such as oxide layers), making a fully vacuum closed-loop "deposition-transfer-test" process impossible. Not only is sub-nanometer thickness control (single to multilayer) difficult to achieve, but thermal diffusion during pulsed deposition also causes nanodot size divergence (nanodot diameter > 100 nm).

[0026] Based on this, this invention proposes a vacuum interconnect system based on STM-MBE to achieve in-situ deposition of nanodots of metal sources.

[0027] Please see Figures 1-3 , Figure 1 This is a schematic diagram of an embodiment of the vacuum interconnection system based on STM-MBE provided by this utility model. The vacuum interconnection system based on STM-MBE includes an STM observation chamber 2, a vacuum sample transfer chamber 3, and an MBE growth chamber 1 that are sequentially connected and isolated.

[0028] The MBE growth chamber 1 contains an STM tip 10 and a substrate sample 30. The surface of the STM tip 10 has a coating layer 20, which is deposited by introducing a metal source 40 into the MBE growth chamber 1. Specifically, the MBE growth chamber 1 is in a vacuum state, and the metal source 40 introduced into the MBE growth chamber 1 is used as an evaporation source. By spraying a beam of metal elements from the evaporation source onto the surface of the STM tip 10, the coating layer 20 is deposited, achieving atomic-level precision deposition. It should be noted that during the deposition of the coating layer 20, the vacuum sample transfer chamber 3 and the MBE growth chamber 1 are isolated from each other.

[0029] It is worth noting that the metal source 40 is typically solid gallium (e.g., a gallium source with a purity of 99.9999%). Gallium has a melting point of around 30°C. It is added as a solid metal to the evaporation device 4 (e.g., a beam source furnace) in the MBE growth chamber 1. The evaporation device 4 then performs molecular beam evaporation on the metal source 40, making it an evaporation source. Specifically, as... Figure 1 As shown, the beam output end of the evaporation device 4 is equipped with a rotatable baffle 41, which is normally in a blocked state. When molecular beam evaporation is required, the evaporation device 4 is used to raise the metal source 40 to a stable temperature for generating the beam. By rotating the baffle 41, the beam will be stably delivered to the surface of the STM tip 10 through the beam output end. This is existing technology and will not be described in detail here.

[0030] The vacuum transfer chamber 3 is used to transfer the STM tip 10 and substrate sample 30 in the MBE growth chamber 1 to the STM observation chamber 2.

[0031] The STM observation chamber 2 is equipped with a voltage pulse module (not shown in the figure) coupled to the STM tip 10. The voltage pulse module is used to generate pulse signals to cause the coating layer 20 deposited on the surface of the STM tip 10 to be deposited onto the substrate sample 30 in the form of nanodots. Specifically, in the STM observation chamber 2, the positions of the STM tip 10 and the substrate sample 30 are kept relatively fixed. The voltage pulse module applies a pulse signal between the STM tip 10 and the substrate sample 30, causing the coating layer 20 on the surface of the STM tip 10 to generate Joule heat and transform into a molten metal source 40. This molten metal source 40 is induced to be deposited onto the substrate sample 30 in the form of nanodots 200, thereby realizing the preparation of a nanostructured thin film.

[0032] First, an encapsulation layer 20 using a metal source 40 as a raw material is grown on the surface of the STM tip 10 through the MBE growth chamber 1, achieving atomic-level precision thin film deposition. Then, the STM tip 10 and the substrate sample 30 are transferred from the MBE growth chamber 1 to the STM observation chamber 2 via the vacuum transfer chamber 3, avoiding contamination and oxidation of the metal source 40. Finally, a voltage pulse module within the STM observation chamber 2 applies pulse signals to the STM tip 10 and the substrate sample 30, enabling nanoscale manipulation of the encapsulation layer 20 and inducing its deposition onto the substrate sample 30 in the form of nanodots 200. This vacuum interconnect system not only provides an ultra-vacuum environment for in-situ deposition of the metal source 40, avoiding the introduction of impurities, but also enables controllable nanoscale deposition of the metal source 40, fully guaranteeing its electrical / quantum properties.

[0033] Compared to solution methods, this approach can be applied in ultra-high vacuum environments, reducing the risk of contamination (such as oxidation and carbon residue), and can achieve nanoscale deposition of metal sources. Compared to vapor deposition, this approach has no thermal effect, does not cause substrate damage, and has a larger spatial resolution (nanoscale), enabling nanoscale deposition of metal sources. Compared to electrodeposition using STM, this approach does not require an electrolyte environment, is compatible with vacuum processes, and offers a wider selection of materials.

[0034] In some feasible implementations, the STM tip 10 is typically made of tungsten wire or a platinum-iridium alloy.

[0035] In some feasible implementations, the growth thickness of the encapsulation layer 20 is 0.03 nm to 3 nm, for example, it can be 0.03 nm, 0.1 nm, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm or 3 nm.

[0036] In some feasible implementations, the material of the encapsulation layer 20 may be indium (In), tin (Sn) or gallium (Ga). In this embodiment, the material of the metal source 40 is gallium.

[0037] In some feasible implementations, such as Figure 1 As shown, the STM observation chamber 2 and the vacuum sample transfer chamber 3 are isolated by a first vacuum gate valve 7, and the vacuum sample transfer chamber 3 and the MBE growth chamber 1 are isolated by a second vacuum gate valve 8. The first vacuum gate valve 7 and the second vacuum gate valve 8 are the core isolation components of the vacuum interconnection system. By opening and closing their respective valve plates, they achieve physical isolation between the three vacuum zones of different vacuum levels: the STM observation chamber 2, the vacuum sample transfer chamber 3, and the MBE growth chamber 1, preventing gas crosstalk or infiltration of outside air and maintaining the vacuum stability of the vacuum interconnection system.

[0038] For example, both the first vacuum slide gate valve 7 and the second vacuum slide gate valve 8 can be commercially available VAT vacuum slide gate valves developed and manufactured by VAT (VATSwitzerland) of Switzerland. VAT vacuum slide gate valves are existing technology products and will not be described in detail here.

[0039] The specific transfer process between the STM tip 10 and the substrate sample 30 is as follows: (1) Close the first vacuum transfer valve 7 to isolate the vacuum transfer chamber 3 and the STM observation chamber 2.

[0040] (2) Open the second vacuum transfer valve 8 to connect the vacuum transfer chamber 3 and the MBE growth chamber 1, and transfer the STM tip 10 and the substrate sample 30 in the MBE growth chamber 1 to the vacuum transfer chamber 3 respectively.

[0041] (3) After the STM tip 10 and the substrate sample 30 enter the vacuum transfer chamber 3, close the second vacuum transfer valve 8 to isolate the vacuum transfer chamber 3 and the MBE growth chamber 1; open the first vacuum transfer valve 7 to connect the vacuum transfer chamber 3 and the STM observation chamber 2, and transfer the STM tip 10 and the substrate sample 30 in the vacuum transfer chamber 3 to the STM observation chamber 2 respectively.

[0042] In some feasible implementations, the chamber of the MBE growth chamber 1 is connected to a first vacuum pump (not shown in the figure), which is used to regulate the vacuum level inside the MBE growth chamber 1.

[0043] It should be further noted that before depositing the encapsulation layer 20, the vacuum level of the MBE growth chamber 1 is ≤5×10⁻⁶. -9 mbar, for example: 3×10 -9 mbar, 3.5×10 -9 mbar, 4×10 -9 mbar, 4.5×10 -9 mbar or 5×10 -9 mbar; During the deposition of the encapsulation layer 20, the vacuum degree of the MBE growth chamber 1 is ≥1×10 -9 mbar, for example: 1×10 -9 mbar, 1.5×10 -9 mbar, 2×10 -9 mbar, 2.5×10 -9 mbar or 3×10 -9 mbar.

[0044] By controlling the vacuum level within the MBE growth chamber 1 to the aforementioned range, collisions between gas molecules and the molecular beam can be minimized in an ultra-high vacuum environment, preventing impurity incorporation and ensuring the high purity of the metal source 40. Furthermore, under ultra-high vacuum conditions, the collision probability during molecular beam transmission is low, allowing the metal elements deposited from the evaporation source to directly reach the surface of the STM tip 10, achieving atomic-level precision control. In some feasible implementations, the vacuum transfer chamber 3 is connected to a second vacuum pump (not shown in the figure), which is used to regulate the vacuum level within the vacuum transfer chamber 3. Specifically, the vacuum level within the vacuum transfer chamber 3 is greater than that within the STM observation chamber 2, and less than that within the MBE growth chamber 1; for example, the vacuum level within the vacuum transfer chamber 3 is 8.5 × 10⁻⁶. -10 mbar, 9×10 -10 mbar, 1×10 -9 mbar, 1.5×10 -9 mbar or 2×10 -9 mbar.

[0045] The substrate sample 30 is not limited in this embodiment and can be a conductive material or a semiconductor material, such as a gallium nitride substrate, a silicon substrate or a silicon carbide substrate.

[0046] In some feasible embodiments, a first sample transfer rod 5 is provided within the MBE growth chamber 1. The first sample transfer rod 5 is configured to respectively grasp the STM tip 10 and the substrate sample 30 placed within the MBE growth chamber 1, and move the STM tip 10 and the substrate sample 30 from the MBE growth chamber 1 to the vacuum sample transfer chamber 3 along a first direction. For example, the first direction (e.g., ...) Figure 1 (As shown in F1) can be in the horizontal direction.

[0047] The vacuum sample transfer chamber 3 is connected to the MBE growth chamber 1, and the vacuum sample transfer chamber 3 is isolated from the STM observation chamber 2. The first sample transfer rod 5 set in the MBE growth chamber 1 is used to grab the STM tip 10 with the coating layer 20 on the surface of the MBE growth chamber 1 and the substrate sample 30 respectively, and transfer them to the vacuum sample transfer chamber 3 respectively.

[0048] The STM observation chamber 2 is provided with a second sample transfer rod 6, which is configured to grab the STM tip 10 and the substrate sample 30 placed in the vacuum sample transfer chamber 3 respectively, and move the STM tip 10 and the substrate sample 30 from the vacuum sample transfer chamber 3 to the STM observation chamber 2 along the first direction respectively.

[0049] The vacuum transfer chamber 3 and the MBE growth chamber 1 are isolated, and the vacuum transfer chamber 3 and the STM observation chamber 2 are connected. The STM tip 10 with the coating layer 20 on the surface and the substrate sample 30 in the vacuum transfer chamber 3 are respectively picked up by the second transfer rod 6 in the STM observation chamber 2 and transferred to the STM observation chamber 2 respectively.

[0050] For example, both the first sample transfer rod 5 and the second sample transfer rod 6 are vacuum magnetic coupling sample transfer rods. A vacuum magnetic coupling sample transfer rod (magnetic rod) is a sample transfer device used in ultra-high vacuum environments, achieving linear or rotary motion without mechanical contact through magnetic coupling drive technology. Vacuum magnetic coupling sample transfer rods are existing technology products and will not be described in detail here.

[0051] The STM observation chamber 2 is equipped with a voltage pulse module coupled to the STM tip 10. The voltage pulse module is used to generate pulse signals so that the coating layer 20 deposited on the surface of the STM tip 10 is deposited onto the substrate sample 30 in the form of nanodots 200.

[0052] In some feasible implementations, a third vacuum pump (not shown in the figure) is connected to the STM observation chamber 2. This third vacuum pump is used to regulate the vacuum level within the STM observation chamber. The vacuum level of the STM observation chamber 2 is below 9 × 10⁻⁶. -10 mbar, for example, the vacuum level of STM observation chamber 2 is 4 × 10 mbar. -10 mbar, 5×10 -10 mbar, 6×10 -10 mbar, 7×10 -10 mbar, 8×10 -10 mbar or 8.5×10 -10 mbar.

[0053] In some feasible implementations, the pulse voltage of the pulse signal is 1 V to 10 V, and the pulse width is 1 ns to 100 ns; the diameter of the nanodots 200 is 5 nm to 50 nm. For example, the pulse voltage of the pulse signal can be 1 V, 2 V, 3 V, 4 V, 5 V, 6 V, 7 V, 8 V, 9 V, or 10 V; the pulse width can be 1 ns, 10 ns, 20 ns, 30 ns, 40 ns, 50 ns, 60 ns, 70 ns, 80 ns, 90 ns, or 100 ns; and the diameter of the nanodots 200 can be 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, or 50 nm. Preferably, the pulse voltage is 2 V to 8 V, the pulse width is 10 ns to 50 ns, and the diameter of the nanodots 200 is 20 nm to 50 nm.

[0054] In a preferred embodiment of this invention, sample holders (not shown in the figure) are respectively provided in the STM observation chamber 2, the vacuum sample transfer chamber 3, and the MBE growth chamber 1. The sample holders are configured to hold the STM tip 10 and the substrate sample 30, and can move along a second direction within their respective chambers. Exemplarily, the sample holders are provided with multiple trays spaced apart vertically, and these trays are configured to hold the STM tip 10 and the substrate sample 30. The sample holders typically possess multi-degree-of-freedom motion capabilities to meet the requirements for precise control of the position and angle of the substrate sample 30. These sample holders are existing technology products and will not be described in detail here.

[0055] It should be noted that the second direction is perpendicular to the first direction. For example, the second direction (such as...) Figure 1 (As shown in F2) can be in the vertical direction.

[0056] The sample holder's movement path in the second direction intersects with the movement paths of the first sample transfer rod 5 and the second sample transfer rod 6 in the first direction, so that the first sample transfer rod 5 and the second sample transfer rod 6 can pick up the STM tip 10 and the substrate sample 30 from the sample holder.

[0057] As a preferred embodiment of this example, the MBE growth chamber 1 is equipped with a film thickness gauge (not shown in the figure) configured to move along a first direction within the MBE growth chamber 1. The film thickness gauge is used to monitor the growth thickness of the coating layer 20 in real time during the deposition of the metal source 40 on the surface of the STM tip 10.

[0058] The growth thickness obtained in real time by the film thickness gauge can not only monitor the film thickness change of the coating layer 20, but also adjust the evaporation temperature, evaporation rate and evaporation time of the metal source 40 in real time according to the growth thickness, so as to achieve precise control of the growth rate of the coating layer 20 and ensure the stable growth of the coating layer 20 on the surface of the STM tip 10.

[0059] Furthermore, a quartz crystal oscillator (not shown in the figure) is also installed in the MBE growth chamber 1. The quartz crystal oscillator is located at the front end of the film thickness gauge and coupled to the film thickness gauge. The film thickness gauge is used to obtain the vibration frequency of the quartz crystal oscillator and calculate the thickness of the coating layer 20 based on the vibration frequency. It is worth noting that the working principle of the film thickness gauge and the quartz crystal oscillator is the same as that in existing related technologies, and will not be described in detail here.

[0060] It is worth noting that the evaporation device 4 is equipped with a separate thermocouple (not shown in the figure) to monitor the evaporation temperature of the metal source 40. During molecular beam epitaxy, the evaporation temperature has a significant impact on the evaporation rate of the metal source 40. Simply put, the higher the temperature, the more molecules are evaporated. The evaporation rate of molecules can be quantitatively measured using a film thickness gauge, thereby determining the appropriate evaporation temperature.

[0061] It is worth noting that the evaporation temperature of the metal source 40 is 600℃~800℃, and the evaporation time of the metal source 40 is 5min~8min. For example, the evaporation temperature of the metal source 40 can be 600℃, 630℃, 660℃, 690℃, 720℃, 750℃, 780℃, or 800℃; and the evaporation time of the metal source 40 can be 5min, 6min, 7min, or 8min.

[0062] In a preferred embodiment of this invention, a temperature control device (not shown in the figure) is also provided in the MBE growth chamber 1. The temperature control device is used to control the temperature of the substrate sample 30. The temperature of the substrate sample 30 is 200℃ to 400℃. For example, the temperature of the substrate sample 30 can be 200℃, 220℃, 250℃, 270℃, 300℃, 320℃, 340℃, 360℃, 380℃, or 400℃.

[0063] The temperature of the substrate sample 30 directly affects the quality and thickness of the nanostructured thin film deposited by the nanodots 200. At low temperatures, the atoms or molecules reaching the surface of the substrate sample 30 lack sufficient kinetic energy, causing the nanodots 200 to "stick" near their initial impact point and unable to move to more energy-stable lattice sites. This results in a rough, porous, amorphous film containing numerous defects. At high temperatures, atoms or molecules cannot adhere to the substrate sample 30, preventing the nanodots 200 from depositing.

[0064] Therefore, by controlling the temperature of the substrate sample 30 at 200℃~400℃ using a temperature control device, sufficient kinetic energy is provided for the adsorption of nanodots 200, enabling them to migrate laterally (diffuse) on the surface of the substrate sample 30, find the lattice point with the lowest energy and incorporate it, thereby achieving two-dimensional layered growth and obtaining a nanostructure film with atomically flat surface and high crystal quality.

[0065] As a preferred embodiment of this invention, the STM observation chamber 2 is equipped with a scanning head (not shown in the figure) connected to the STM tip 10. The scanning head is used to drive the STM tip 10 to perform three-dimensional nanoscale displacement within the STM observation chamber 2.

[0066] The scanning head is the core execution component of the STM system. It is detachably connected to the STM tip 10. The scanning head drives the STM tip 10 through piezoelectric ceramics to achieve three-dimensional movement with nanometer-level precision. Before the voltage pulse module generates a pulse signal to deposit the coating layer 20 on the surface of the STM tip 10 into nanodots 200 on the substrate sample 30, the scanning head drives the STM tip 10 to scan the substrate sample 30, which can confirm the deposition position on the substrate sample 30 with nanometer-level precision.

[0067] It should be noted that the scanning head can achieve nanoscale positioning of the substrate sample 30 and the STM tip 10 by driving the STM tip 10, thereby enabling the molten metal source 40 on the STM tip 10 to be precisely deposited on the deposition position on the substrate sample 30 in the form of nanodots 200.

[0068] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention, and all such changes should fall within the protection scope of the claims of the present invention.

Claims

1. A vacuum interconnect system based on STM-MBE, characterized in that, This includes an STM observation chamber, a vacuum sample transfer chamber, and an MBE growth chamber that are sequentially docked and isolated; The MBE growth chamber is equipped with an STM tip, and the surface of the STM tip has a coating layer, which is obtained by depositing a metal source into the MBE growth chamber. The MBE growth chamber contains a substrate sample, and the STM tip and the substrate sample in the MBE growth chamber can be transferred to the STM observation chamber through the vacuum sample transfer chamber. The STM observation chamber is equipped with a voltage pulse module coupled to the STM tip. The voltage pulse module is used to generate a pulse signal so that the coating layer deposited on the surface of the STM tip is deposited onto the substrate sample in the form of nanodots.

2. The vacuum interconnection system according to claim 1, characterized in that, The MBE growth chamber is provided with a first sample transfer rod, which is configured to pick up the STM tip and the substrate sample placed in the MBE growth chamber respectively, and move the STM tip and the substrate sample from the MBE growth chamber to the vacuum sample transfer chamber along a first direction respectively. The STM observation chamber is provided with a second sample transfer rod, which is configured to grab the STM tip and the substrate sample placed in the vacuum sample transfer chamber, and move the STM tip and the substrate sample from the vacuum sample transfer chamber to the STM observation chamber along the first direction.

3. The vacuum interconnection system according to claim 2, characterized in that, Each of the STM observation chamber, the vacuum sample transfer chamber, and the MBE growth chamber is equipped with a sample holder. The sample holder is configured to hold the STM tip and the substrate sample and can move along a second direction within its respective chamber; the second direction is perpendicular to the first direction. The movement path of the sample holder in the second direction intersects with the movement paths of the first sample transfer rod and the second sample transfer rod in the first direction, so that the first sample transfer rod and the second sample transfer rod can pick up the STM tip and the substrate sample from the sample holder.

4. The vacuum interconnection system according to claim 2, characterized in that, The MBE growth chamber is equipped with a film thickness gauge configured to move along the first direction within the MBE growth chamber. The film thickness gauge is used to monitor the growth thickness of the coating layer in real time during the deposition of the metal source on the surface of the STM tip.

5. The vacuum interconnection system according to claim 2, characterized in that, Both the first and second sample transfer rods are magnetically coupled sample transfer rods.

6. The vacuum interconnection system according to claim 1, characterized in that, The MBE growth chamber is also equipped with a temperature control device, which is used to control the temperature of the substrate sample.

7. The vacuum interconnection system according to claim 1, characterized in that, The MBE growth chamber is connected to a first vacuum pump, which is used to regulate the vacuum level inside the MBE growth chamber. And / or, the vacuum sample transfer chamber is connected to a second vacuum pump, which is used to regulate the vacuum level within the vacuum sample transfer chamber; And / or, the STM observation chamber is connected to a third vacuum pump, which is used to regulate the vacuum level inside the STM observation chamber.

8. The vacuum interconnection system according to claim 1, characterized in that, The STM observation chamber is isolated from the vacuum sample transfer chamber by a first vacuum valve, and the vacuum sample transfer chamber is isolated from the MBE growth chamber by a second vacuum valve.

9. The vacuum interconnection system according to claim 1, characterized in that, The STM observation chamber is equipped with a scanning head connected to the STM tip, which is used to drive the STM tip to perform three-dimensional nanoscale displacement within the STM observation chamber.

10. The vacuum interconnection system according to claim 1, characterized in that, The metal source is made of indium, tin, or gallium; And / or, the diameter of the nanodots is 5 nm to 50 nm.

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