Single crystal furnace hot field for preventing silicon infiltration

Abstract

The utility model relates to single crystal furnace thermal field spare technical field especially relates to a single crystal furnace thermal field of preventing silicon infiltration. Including thermal field spare, the arc surface one end of thermal field spare is equipped with adjusting mechanism, the adjusting mechanism includes the connecting frame, the connecting frame with the arc surface one end of thermal field spare sliding connection, the one side fixedly connected with guide cylinder of connecting frame, the arc surface one end fixedly connected with guide plate of connecting frame, the one side fixedly connected with two connecting pieces of connecting frame away from guide cylinder, the side surface of connecting piece is equipped with the positioning hole. The utility model provides a single crystal furnace thermal field of preventing silicon infiltration has when using thermal field spare, can fix adjusting mechanism on thermal field spare in advance, through the adjusting mechanism can guide the silicon liquid that flows out from the position of the crucible to the pot support and the pot country, avoid the contact of silicon liquid because of with thermal field spare, and contact with bellows pipeline, and the adjusting mechanism can avoid the advantage that silicon liquid scalds and wears bellows pipeline.

Description

Technical Field

[0001] This utility model relates to the field of hot zone components for single crystal furnaces, and in particular to a hot zone for single crystal furnaces that prevents silicon infiltration. Background Technology

[0002] The hot zone components of a single crystal furnace are specially treated materials and designs used in the single crystal growth process to prevent silicon atoms inside the furnace from penetrating into the hot zone materials, thereby affecting the quality of single crystal growth.

[0003] Utility model patent application CN219385394U discloses a single crystal furnace hot zone heater assembly and a single crystal furnace. The key technical features include: a heating assembly; multiple U-shaped heating frames, the heating assembly being formed by splicing together multiple U-shaped heating frames arranged in a ring; multiple connecting mechanisms, the connecting mechanisms being located between two adjacent U-shaped heating frames for splicing the U-shaped heating frames; multiple positioning mechanisms, a connecting ring being provided on the lower side of the heating assembly, and multiple positioning mechanisms being respectively located between the multiple U-shaped heating frames and the connecting ring; and electrodes, the electrodes being fixedly connected within the connecting rings. This improves working efficiency and reduces the cost of maintaining the heating assembly.

[0004] Regarding the above-mentioned issues, the following technical defects exist: In a single crystal furnace, the pulling of single crystal silicon rods using the Czochralski method is a complex and delicate process. During this process, due to issues with raw materials, auxiliary materials, and processes, high-temperature molten silicon may flow out through the crucible towards the crucible support and crucible liner. In this case, the outflowing high-temperature molten silicon will fall onto the heat exchange components inside the furnace, and some of the molten silicon will be absorbed by these components, while most of the molten silicon will flow out through the corrugated pipe. However, due to the extremely high temperature of the molten silicon, it will burn through the corrugated pipe, allowing gas to enter the pipe. As a result, the original negative pressure inside the furnace will become atmospheric pressure, thereby reducing the impact on the furnace body. Utility Model Content

[0005] The purpose of this invention is to address the shortcomings of existing technologies where the temperature of the seeping molten silicon is extremely high, which can burn through the corrugated pipes, allowing gas to enter the pipes. In this way, the original negative pressure inside the furnace will become normal pressure, thereby reducing the impact on the furnace body.

[0006] To solve the above-mentioned technical problems, this utility model provides a single crystal furnace hot zone for preventing silicon infiltration, comprising: a hot zone component, an adjustment mechanism at one end of the arc surface of the hot zone component, the adjustment mechanism including a connecting frame, the connecting frame being slidably connected to one end of the arc surface of the hot zone component, a guide cylinder being fixedly connected to one side of the connecting frame, a guide plate being fixedly connected to one end of the arc surface of the connecting frame, two connecting pieces being fixedly connected to the side of the connecting frame away from the guide cylinder, positioning holes being opened on the side of the connecting pieces, a common fixing outer ring being slidably passed through the surfaces of the two connecting pieces, the inner wall of the fixing outer ring being fixedly connected to the arc surface of the hot zone component, an adjustment rod being fixedly connected to the hot zone component at the positions corresponding to the two connecting pieces, a rotating shaft being threadedly connected to the arc surface of the adjustment rod, an adjustment plate being rotatably connected to the arc surface of the rotating shaft, a limit block being fixedly connected to one side of the adjustment plate, two limit blocks being slidably passed through the inner walls of two positioning holes respectively, a sliding rod being slidably passed through the inner wall of the adjustment plate, and one end of the arc surface of the sliding rod being fixedly connected to the arc surface of the hot zone component.

[0007] The effect achieved by the above-mentioned components is as follows: In a single crystal furnace, the pulling of single crystal silicon rods using the Czochralski method is a complex and delicate process. During this process, due to issues with raw materials, auxiliary materials, and processes, high-temperature molten silicon may flow out from the crucible towards the crucible support and crucible liner. In this case, the outflowing high-temperature molten silicon will fall onto the heat exchange components inside the furnace, and some of the molten silicon will be absorbed by these heat exchange components, while most of the molten silicon will flow out through the corrugated pipe. However, due to the extremely high temperature of the molten silicon, it will burn through the corrugated pipe, allowing gas to enter the pipe. As a result, the original negative pressure inside the furnace will become normal pressure, thereby reducing the impact on the furnace body. At this time, the adjustment mechanism can be fixed on the heat exchange component. Through the adjustment mechanism, the molten silicon flowing out from the crucible towards the crucible support and crucible liner can be guided out of the surface of the heat exchange component, thereby preventing the molten silicon from contacting the corrugated pipe through the heat exchange component and avoiding the situation of burning through the corrugated pipe.

[0008] Preferably, a rotating disk is fixedly connected to one end of the arc surface of the rotating shaft, and the arc surface of the rotating disk is provided with a plurality of anti-slip textures.

[0009] The effect achieved by the above components is that the rotating disk can increase the size of the rotating surface, and the rotating disk is provided with anti-slip texture, which can better drive the rotating shaft to rotate on the adjusting rod.

[0010] Preferably, a positioning ring is rotatably connected to the side of the rotating disk near the adjusting plate, a fixing plate is fixedly connected to one side of the adjusting plate, a pin slides through the inner wall of the fixing plate, a spring is sleeved on one end of the arc surface of the pin, the two ends of the spring are fixedly connected to the pin and one side of the fixing plate respectively, and the other end of the arc surface of the pin slides through the inner wall of the positioning ring.

[0011] The effect achieved by the above components is as follows: when the arc surface of the limiting block contacts the inner wall of the positioning hole through the rotating disk, the spring can drive the pin, which connects to the inner wall of the positioning ring through the fixing plate, thereby limiting the rotation angle of the rotating disk and preventing the rotating shaft from moving on the adjusting rod through the rotating disk, which would affect the stability of fixing the connecting frame.

[0012] Preferably, the inner wall of the pin is rotatably connected to a pull ring.

[0013] The effect achieved by the above components is that the pull ring can increase the speed at which the pin is pulled out from the fixing plate.

[0014] Preferably, an abutment ring is fixedly connected to the inner wall side of the positioning hole near the limiting block, and the abutment ring has a circular cross-section.

[0015] The effect achieved by the above components is that the abutment ring can improve the tightness of the contact between the limiting block and the inner wall of the positioning hole, thereby improving the stability of the limiting block in the positioning hole.

[0016] Preferably, a gasket is fixedly connected to the side of the fixed outer ring near the connecting frame, and the cross-sectional dimensions of the gasket are the same as those of the fixed outer ring.

[0017] The effect achieved by the above components is that the gasket can prevent damage from contact between the connecting frame and the fixed outer ring, and the gasket can protect the contact position between the two.

[0018] Preferably, a plurality of flow channels are provided on one side of the guide plate, and the plurality of flow channels are evenly distributed on the guide plate.

[0019] The effect achieved by the above components is that when the molten silicon comes into contact with the surface of the guide plate, the flow channel opened on the guide plate can guide the flow of the molten silicon, and the flow channel can improve the stability of the guide plate in guiding the flow direction of the molten silicon.

[0020] Compared with related technologies, the single crystal furnace thermal field for preventing silicon infiltration provided by this utility model has the following beneficial effects: This utility model provides a single crystal furnace hot zone to prevent silicon infiltration. By setting an adjustment mechanism, the adjustment mechanism can be fixed on the hot zone component in advance when using the hot zone component. The adjustment mechanism can guide the silicon liquid flowing from the crucible to the crucible support and crucible rim, avoiding contact between the silicon liquid and the corrugated pipe due to contact with the hot zone component. The adjustment mechanism can also prevent the silicon liquid from scalding through the corrugated pipe. Attached Figure Description

[0021] Figure 1 A schematic diagram of the structure of a single crystal furnace thermal field for preventing silicon infiltration, provided by this utility model; Figure 2for Figure 1 The diagram shows the structure of the adjustment mechanism. Figure 3 for Figure 1 A schematic diagram of the disassembled structure of the adjustment mechanism shown; Figure 4 for Figure 3 The enlarged view at point A is shown below; Figure 5 for Figure 1 The diagram shows a partial breakdown of the adjustment mechanism.

[0022] The following are the labeling elements in the diagram: 1. Thermal element; 2. Adjustment mechanism; 201. Connecting frame; 202. Guide plate; 203. Guide cylinder; 204. Connecting piece; 205. Positioning hole; 206. Fixed outer ring; 207. Adjusting rod; 208. Rotating shaft; 209. Adjusting plate; 210. Limiting block; 211. Sliding rod; 212. Rotating disk; 213. Positioning ring; 214. Fixed piece; 215. Pin; 216. Spring; 217. Pull ring; 218. Abutment ring; 219. Gasket; 220. Guide channel. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0024] The specific implementation of this utility model will be described in detail below with reference to specific embodiments.

[0025] Please see Figures 1 to 5 The present invention provides a single crystal furnace hot zone for preventing silicon infiltration, comprising: a hot zone component 1, wherein an adjustment mechanism 2 is provided at one end of the arc surface of the hot zone component 1.

[0026] In the embodiments of this utility model, please refer to Figures 2 to 4The adjusting mechanism 2 includes a connecting frame 201, which is slidably connected to one end of the arc surface of the heating element 1. A guide cylinder 203 is fixedly connected to one side of the connecting frame 201, and a guide plate 202 is fixedly connected to one end of the arc surface of the connecting frame 201. Two connecting pieces 204 are fixedly connected to the side of the connecting frame 201 away from the guide cylinder 203. A positioning hole 205 is provided on the side of the connecting piece 204. The same fixed outer ring 206 slides through the surface of the two connecting pieces 204. The inner wall of the fixed outer ring 206 is fixedly connected to the arc surface of the heating element 1. An adjusting rod 207 is fixedly connected to the heating element 1 at the position corresponding to the two connecting pieces 204. A rotating shaft 208 is threadedly connected to the arc surface of the adjusting rod 207, and a rotating shaft 208 is rotatably connected to the arc surface of the rotating shaft 208. An adjusting plate 209 has a limiting block 210 fixedly connected to one side. The two limiting blocks 210 slide through the inner walls of the two positioning holes 205 respectively. A sliding rod 211 slides through the inner wall of the adjusting plate 209. One end of the arc surface of the sliding rod 211 is fixedly connected to the arc surface of the heat field component 1. In a single crystal furnace, the pulling of single crystal silicon rods by the Czochralski method is a complex and delicate process. During this process, due to issues with raw materials, auxiliary materials, and processes, high-temperature molten silicon may flow out through the crucible towards the crucible support and crucible liner. In this case, the outflowing high-temperature molten silicon will fall onto the heat field component 1 inside the furnace, and some of the molten silicon will be absorbed by these heat field components 1, while most of the molten silicon will flow out through the corrugated pipe. However, due to the extremely high temperature of the molten silicon... It will burn through the corrugated pipe, allowing gas to enter the pipe. This will change the negative pressure inside the furnace to normal pressure, reducing the impact on the furnace body. At this point, the adjusting mechanism 2 can be fixed to the heating element 1. The adjusting mechanism 2 can guide the molten silicon flowing from the crucible to the crucible support and crucible liner, guiding it out of the surface of the heating element 1. This prevents the molten silicon from contacting the corrugated pipe through the heating element 1, thus avoiding burning through the corrugated pipe. A rotating disk 212 is fixedly connected to one end of the arc surface of the rotating shaft 208. The arc surface of the rotating disk 212 has several anti-slip patterns. The rotating disk 212 increases the size of the rotating surface, and the anti-slip patterns on the rotating disk 212 allow for better rotation of the rotating shaft 208. 08 rotates on the adjusting rod 207. A positioning ring 213 is rotatably connected to the side of the rotating disk 212 near the adjusting plate 209. A fixing plate 214 is fixedly connected to one side of the adjusting plate 209. A pin 215 slides through the inner wall of the fixing plate 214. A spring 216 is fitted onto one end of the arc surface of the pin 215. Both ends of the spring 216 are fixedly connected to the pin 215 and one side of the fixing plate 214, respectively. The other end of the arc surface of the pin 215 slides through the inner wall of the positioning ring 213. When the arc surface of the limiting block 210 contacts the inner wall of the positioning hole 205 through the rotating disk 212, the spring 216 drives the pin 215, which connects to the inner wall of the positioning ring 213 through the fixing plate 214, thereby limiting the rotation angle of the rotating disk 212.To avoid moving the rotating shaft 208 on the adjusting rod 207 via the rotating disk 212, which would affect the stability of fixing the connecting frame 201, a pull ring 217 is rotatably connected to the inner wall of the pin 215. The pull ring 217 can increase the speed at which the pin 215 is pulled out from the fixing plate 214. An abutment ring 218 is fixedly connected to the inner wall of the positioning hole 205 near the limit block 210. The abutment ring 218 has a circular cross-section and can improve the tightness of the contact between the limit block 210 and the inner wall of the positioning hole 205, thereby improving the stability of the limit block 210 in the positioning hole 205. The fixing outer ring 206 is close to the connecting frame 201. A gasket 219 is fixedly connected to one side of the connecting frame 201. The cross-sectional dimensions of the gasket 219 are the same as those of the fixed outer ring 206. The gasket 219 prevents damage to the connecting frame 201 from contact with the fixed outer ring 206 and protects the contact area between the two. Several flow channels 220 are evenly distributed on one side of the guide plate 202. When the molten silicon comes into contact with the surface of the guide plate 202, the flow channels 220 guide the flow of the molten silicon, improving the stability of the guide plate 202 in guiding the flow direction of the molten silicon. The working principle of the single crystal furnace hot zone for preventing silicon infiltration provided by this utility model is as follows: The adjusting mechanism 2 needs to be fixed to the hot zone component 1 to prevent the molten silicon flowing from the crucible to the crucible support and crucible liner. When the molten silicon comes into contact with the hot zone component 1 and flows into the corrugated pipe, the connecting frame 201 is connected to the arc surface of the hot zone component 1. At this time, one side of the connecting frame 201 will contact one side of the fixing outer ring 206. A gasket 219 is installed on the fixing outer ring 206. The gasket 219 can prevent damage from the contact between the connecting frame 201 and the fixing outer ring 206, and can protect the contact position between the two. At this time, the two connecting pieces 204 can be removed from the fixing outer ring 206. The shaft 208 can be rotated on the adjusting rod 207 after passing through the inner part of the rod 6. The movement of the rotating shaft 208 will drive the adjusting plate 209 to move. The adjusting plate 209 will slide along the direction of the sliding rod 211. At this time, the adjusting plate 209 can drive the limiting block 210 to move in the direction of the positioning hole 205 on the connecting piece 204. A rotating disk 212 is installed on the rotating shaft 208. The rotating disk 212 can increase the size of the rotating surface and has anti-slip texture, which can better drive the rotating shaft 208 to rotate on the adjusting rod 207. After the limiting block 210 contacts the inner wall of the positioning hole 205, the rotation is complete. The connecting piece 204 is fixed inside the fixing outer ring 206, at which point the connecting frame 201 can be fixed on the thermal element 1. The guide cylinder 203 and guide plate 202 can guide the seeping silicon liquid. The guide plate 202 has a flow channel 220. When the silicon liquid comes into contact with the surface of the guide plate 202, the flow channel 220 guides the flow of the silicon liquid. The flow channel 220 improves the stability of the guide plate 202 in guiding the flow direction of the silicon liquid. When it is necessary to fix the rotation angle of the rotating disk 212 to improve the effect of the rotating shaft 208 driving the limiting block 210 to fix the connecting piece 204, it can be done through... Spring 216 drives pin 215, which connects to the inner wall of positioning ring 213 via fixing plate 214 to limit the rotation angle of rotating disk 212. This prevents rotating shaft 208 from moving on adjusting rod 207 via rotating disk 212, thus affecting the stability of fixing connecting frame 201. Pull ring 217 is installed on pin 215, which can increase the speed at which pin 215 is pulled out from fixing plate 214. Abutment ring 218 is installed on positioning hole 205, which can improve the tightness of contact between limiting block 210 and inner wall of positioning hole 205, thereby improving the stability of limiting block 210 in positioning hole 205.

[0027] The circuits and controls involved in this utility model are all existing technologies, and will not be described in detail here.

[0028] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A single-crystal furnace thermal field for preventing silicon infiltration, characterized in that, include: A heating element (1) has an adjustment mechanism (2) at one end of its arc surface. The adjustment mechanism (2) includes a connecting frame (201), which is slidably connected to one end of the arc surface of the heating element (1). A guide tube (203) is fixedly connected to one side of the connecting frame (201), and a guide plate (202) is fixedly connected to one end of the arc surface of the connecting frame (201). Two connecting pieces (204) are fixedly connected to the side of the connecting frame (201) away from the guide tube (203). A positioning hole (205) is opened on the side of the connecting piece (204), and the same fixed outer ring (206) slides through the surfaces of the two connecting pieces (204). The inner wall of the outer ring (206) is fixedly connected to the arc surface of the heat field component (1). The heat field component (1) is fixedly connected to the positions of the two connecting pieces (204) with adjustment rods (207). The arc surface of the adjustment rod (207) is threadedly connected to a rotating shaft (208). The arc surface of the rotating shaft (208) is rotatably connected to an adjustment plate (209). One side of the adjustment plate (209) is fixedly connected to a limit block (210). The two limit blocks (210) slide through the inner walls of the two positioning holes (205) respectively. The inner wall of the adjustment plate (209) slides through a sliding rod (211). One end of the arc surface of the sliding rod (211) is fixedly connected to the arc surface of the heat field component (1).

2. The single crystal furnace hot zone for preventing silicon infiltration according to claim 1, characterized in that, One end of the arc surface of the rotating shaft (208) is fixedly connected to a rotating disk (212), and the arc surface of the rotating disk (212) is provided with a number of anti-slip patterns.

3. The single crystal furnace hot zone for preventing silicon infiltration according to claim 2, characterized in that, The rotating disk (212) is rotatably connected to a positioning ring (213) on the side near the adjusting plate (209). A fixing plate (214) is fixedly connected to one side of the adjusting plate (209). A pin (215) slides through the inner wall of the fixing plate (214). A spring (216) is sleeved on one end of the arc surface of the pin (215). The two ends of the spring (216) are fixedly connected to the pin (215) and one side of the fixing plate (214) respectively. The other end of the arc surface of the pin (215) slides through the inner wall of the positioning ring (213).

4. The single crystal furnace hot zone for preventing silicon infiltration according to claim 3, characterized in that, The inner wall of the pin (215) is rotatably connected to a pull ring (217).

5. The single crystal furnace hot zone for preventing silicon infiltration according to claim 1, characterized in that, The positioning hole (205) is fixedly connected to an abutment ring (218) on the inner wall side near the limiting block (210), and the abutment ring (218) has a circular cross-section.

6. The single crystal furnace thermal field for preventing silicon infiltration according to claim 1, characterized in that, A gasket (219) is fixedly connected to the side of the fixed outer ring (206) near the connecting frame (201), and the cross-sectional dimensions of the gasket (219) are the same as those of the fixed outer ring (206).

7. The single crystal furnace thermal field for preventing silicon infiltration according to claim 1, characterized in that, The guide plate (202) has a plurality of flow channels (220) on one side, and the plurality of flow channels (220) are evenly distributed on the guide plate (202).

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