A crystal bar growth apparatus

Abstract

The utility model discloses a crystal bar growth device, including quartz tube, a plurality of heating structure and control unit, the quartz tube includes the first accommodation cavity for accommodating polycrystalline raw material and the second accommodation cavity for accommodating sub -crystal, the first accommodation cavity with the second accommodation cavity intercommunication, a plurality of heating structure follow the length direction of quartz tube and set, every the heating structure all includes first heating component and second heating component, the first heating component ring sets in the outer circumferential side of first accommodation cavity to heat polycrystalline raw material, second heating component ring sets in the outer circumferential side of second accommodation cavity to heat sub -crystal, control unit with first heating component with second heating component electricity is connected, the utility model discloses crystallization speed is faster, and production efficiency is higher, and through the independent heating of many areas, temperature gradient can be more accurate control, reduces thermal stress and defect.

Description

Technical Field

[0001] This utility model relates to the field of crystal rod growth technology, and in particular to a crystal rod growth apparatus. Background Technology

[0002] Currently, the heating systems of existing crystal growth apparatuses typically employ an integrated design, making it impossible to achieve segmented and independent temperature control in different areas within the growth furnace. This results in difficulty in precisely controlling the temperature gradient within the furnace, affecting the uniformity and quality of crystal growth. Furthermore, their heating methods are mostly vertical, leading to slow crystallization rates, long growth cycles, and low production efficiency. Utility Model Content

[0003] The technical problem to be solved by this utility model is that the heating system of the existing crystal rod growth device usually adopts an integral design, which cannot realize the segmented and independent control of the temperature of different areas in the growth furnace. Its heating method is mostly vertical heating, which results in a slow crystal formation rate, long growth cycle and low production efficiency.

[0004] To solve the above-mentioned technical problems, this utility model provides a crystal rod growth device, including a quartz tube, multiple heating structures and a control unit; the quartz tube includes a first accommodating cavity for accommodating polycrystalline raw materials and a second accommodating cavity for accommodating daughter crystals, the first accommodating cavity and the second accommodating cavity are connected; Multiple heating structures are arranged sequentially along the length of the quartz tube. Each heating structure includes a first heating component and a second heating component. The first heating component is arranged around the outer periphery of the first accommodating cavity to heat the polycrystalline raw material, and the second heating component is arranged around the outer periphery of the second accommodating cavity to heat the daughter crystal. The control unit is electrically connected to the first heating component and the second heating component.

[0005] Furthermore, the first heating assembly includes a first heating element and a first wire. The first heating element is arranged around the outer periphery of the first accommodating cavity, the first wire is connected to the first heating element, and the first wire is electrically connected to the control unit.

[0006] Furthermore, the first heating element is annular, and a first notch is formed on one side of the first heating element.

[0007] Furthermore, the first heating element has a plurality of first heat dissipation holes, the plurality of first heat dissipation holes are spaced apart along the extension direction of the first heating element to form a first heat dissipation hole group, and the plurality of first heat dissipation hole groups are spaced apart along the height direction of the first heating element.

[0008] Furthermore, the second heating component includes a second heating element and a second wire. The second heating element is arranged around the outer periphery of the second accommodating cavity, and the second wire is connected to the second heating element and electrically connected to the control unit.

[0009] Furthermore, the second heating element is annular, and a second notch is formed on one side of the second heating element.

[0010] Furthermore, the second heating element has a plurality of second heat dissipation holes, which are spaced apart along the extension direction of the second heating element to form a second heat dissipation hole group, and the plurality of second heat dissipation hole groups are spaced apart along the height direction of the second heating element.

[0011] Furthermore, the first heating component and the second heating component are spaced apart along the radial direction of the quartz tube.

[0012] Furthermore, the heating structure also includes a substrate, which is hollow and includes a first mounting cavity for placing the first heating component and a second mounting cavity for placing the second heating component, wherein the first mounting cavity and the second mounting cavity are in communication.

[0013] Furthermore, the quartz tube includes a first tube body and a second tube body, the second tube body being disposed on one side of the first tube body and communicating with the first tube body, the first tube body having a first receiving cavity, and the second tube body having a second receiving cavity.

[0014] Compared with the prior art, the crystal rod growth apparatus of this utility model has the following advantages: In this embodiment of the invention, the second accommodating cavity is first heated by the second heating component to heat the seed crystal. Then, the first accommodating cavity is heated by the first heating component to heat the polycrystalline raw material. This causes the molten polycrystalline material to flow into the second accommodating cavity and epitaxially grow into a single crystal structure from the seed crystal along a horizontal direction. Compared to the seed crystal growth method at the bottom, this embodiment uses the above method, allowing for simultaneous growth in the horizontal direction, resulting in faster crystallization, higher production efficiency, and more precise control of the temperature gradient through independent heating of multiple zones, reducing thermal stress and defects. Attached Figure Description

[0015] The present application will be further described in detail below with reference to the accompanying drawings and preferred embodiments. However, those skilled in the art will appreciate that these drawings are drawn only for the purpose of explaining the preferred embodiments and therefore should not be construed as limiting the scope of the present application. Furthermore, unless specifically indicated, the drawings are intended only to conceptually represent the composition or structure of the described objects and may contain exaggerated representations, and the drawings are not necessarily drawn to scale.

[0016] Figure 1 This is a schematic diagram of the structure of the crystal rod growth apparatus provided in this embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the quartz tube provided in this embodiment of the utility model; Figure 3 This is a schematic diagram of the heating structure provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of the first heating component provided in this embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of the second heating component provided in this embodiment of the present invention; In the figure, 1 is a quartz tube; 11 is a first accommodating cavity; 12 is a second accommodating cavity; 2 is a heating structure; 21 is a first heating component; 211 is a first heating element; 2111 is a first heat dissipation hole; 212 is a first wire; 22 is a second heating component; 221 is a second heating element; 2211 is a second heat dissipation hole; 222 is a second wire; 23 is a substrate; 231 is a first mounting cavity; and 232 is a second mounting cavity. Detailed Implementation

[0017] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model.

[0018] like Figures 1 to 3 As shown, this utility model provides a crystal rod growth apparatus, including a quartz tube 1, multiple heating structures 2, and a control unit; the quartz tube 1 includes a first accommodating cavity 11 for accommodating polycrystalline raw materials and a second accommodating cavity 12 for accommodating daughter crystals, the first accommodating cavity 11 and the second accommodating cavity 12 being connected; multiple heating structures 2 are arranged sequentially along the length direction of the quartz tube 1, each heating structure 2 including a first heating component 21 and a second heating component 22, the first heating component 21 being arranged around the outer periphery of the first accommodating cavity 11 to heat the polycrystalline raw materials, and the second heating component 22 being arranged around the outer periphery of the second accommodating cavity 12 to heat the daughter crystals; the control unit is electrically connected to the first heating component 21 and the second heating component 22 to achieve temperature control and ensure the stability of the crystal rod growth interface.

[0019] Based on the above structure, in this embodiment, the second accommodating cavity 12 is first heated by the second heating component 22 to heat the seed crystal, and then the first accommodating cavity 11 is heated by the first heating component 21 to heat the polycrystalline raw material. This causes the molten polycrystalline material to flow into the second accommodating cavity 12 and grow epitaxially into a single crystal structure from the seed crystal along the horizontal direction. Compared to the seed crystal growth method at the bottom, this embodiment uses the above method, which allows it to grow horizontally, resulting in faster crystallization and higher production efficiency. Furthermore, by heating multiple zones independently, the temperature gradient can be more precisely controlled, reducing thermal stress and defects.

[0020] It should be noted that the heating structure 2 in this embodiment can be replaced arbitrarily, reducing maintenance costs.

[0021] like Figure 3 As shown, the heating structure 2 also includes a substrate 23, which is a structure that supports or carries the first heating component 21 and the second heating component 22. It is hollow and provides space for the internal installation of the first heating component 21 and the second heating component 22. The substrate 23 includes a first mounting cavity 231 for placing the first heating component 21 and a second mounting cavity 232 for placing the second heating component 22. The first mounting cavity 231 and the second mounting cavity 232 are connected to each other so that the first heating component 21 and the second heating component 22 can be installed separately, so as to realize separate temperature control of the daughter crystal and the polycrystalline raw material.

[0022] like Figure 4 As shown, the first heating component 21 includes a first heating element 211 and a first wire 212. The first heating element 211 is arranged around the outer periphery of the first accommodating cavity 11, so that heat is evenly conducted from the outside to the inside of the first accommodating cavity 11 to achieve efficient heating. The first wire 212 is connected to the first heating element 211 and is electrically connected to the control unit so as to transmit current to the first heating element 211 through the first wire 212, thereby controlling its heating or stopping.

[0023] This embodiment uses electric heating to provide the required temperature environment for the polycrystalline raw materials. The surrounding arrangement of the first heating element 211 allows heat to be evenly distributed from all sides, reducing local overheating or insufficient temperature and improving product quality. Furthermore, since the first heating element 211 is connected to the control unit, the control unit can adjust the heating power of the first heating element 211 to control the process flow such as heating, heat preservation, and cooling, ensuring the consistency and stability of production.

[0024] Furthermore, the first heating element 211 is annular, which helps to uniformly heat the surrounding first accommodating cavity 11, allowing heat to be conducted from all sides to the first accommodating cavity 11 and avoiding local overheating. In addition, a first notch is formed on one side of the first heating element 211. This structure can better adapt to the shape of the quartz tube 1, allowing the first heating element 211 to be installed in a tight fit, while preventing it from directly heating the daughter crystal.

[0025] Furthermore, the first heating element 211 has a plurality of first heat dissipation holes 2111, the plurality of first heat dissipation holes 2111 are spaced apart along the extension direction of the first heating element 211 to form a first heat dissipation hole group, and the plurality of first heat dissipation hole groups are spaced apart along the height direction of the first heating element 211.

[0026] Understandably, the first heating element 211 has three sets of first heat dissipation hole groups, each group containing several first heat dissipation holes 2111. Each set of first heat dissipation hole groups is distributed circumferentially, with the groups staggered or aligned vertically. The number of these first heat dissipation hole groups can be selected as needed and is not specifically limited here. The arrangement of the first heat dissipation holes 2111 in this embodiment can reduce local heat accumulation, making the polycrystalline material more stable under heat. In addition, it reduces its weight, thereby reducing the burden on the substrate 23.

[0027] like Figure 5 As shown, the second heating component 22 includes a second heating element 221 and a second wire 222. The second heating element 221 is arranged around the outer periphery of the second accommodating cavity 12, so that heat is evenly conducted from the outside to the inside of the second accommodating cavity 12 to achieve efficient heating. The second wire 222 is connected to the second heating element 221 and is electrically connected to the control unit so as to transmit current to the second heating element 221 through the second wire 222, thereby controlling its heating or stopping.

[0028] This embodiment uses electric heating to provide the required temperature environment for the daughter crystal. The surrounding arrangement of the second heating element 221 allows heat to be evenly distributed from all sides, reducing local overheating or insufficient temperature and improving product quality. Furthermore, since the second heating element 221 is connected to the control unit, the control unit can adjust the heating power of the second heating element 221 to control the heating, heat preservation, and cooling processes, ensuring production consistency and stability.

[0029] Furthermore, the second heating element 221 is annular, which helps to uniformly heat the surrounding second accommodating cavity 12, allowing heat to be conducted from all sides to the second accommodating cavity 12 and avoiding localized overheating. In addition, a second notch is formed on one side of the second heating element 221. This structure can better adapt to the shape of the quartz tube 1, allowing the second heating element 221 to be installed in a tight fit, while preventing it from directly heating the polycrystalline material.

[0030] Furthermore, the second heating element 221 has a plurality of second heat dissipation holes 2211, which are spaced apart along the extension direction of the second heating element 221 to form a second heat dissipation hole group, and the plurality of second heat dissipation hole groups are spaced apart along the height direction of the second heating element 221.

[0031] Understandably, the second heating element 221 has three sets of second heat dissipation hole groups, each group containing several second heat dissipation holes 2211. Each set of second heat dissipation hole groups is distributed circumferentially, with the groups staggered or aligned vertically. The number of these second heat dissipation hole groups can be selected as needed and is not specifically limited here. The arrangement of the second heat dissipation holes 2211 in this embodiment can reduce local heat accumulation, making the sub-crystal more stable under heat. In addition, it reduces its weight, thereby reducing the burden on the substrate 23.

[0032] Furthermore, the first heating component 21 and the second heating component 22 are spaced apart along the radial direction of the quartz tube 1.

[0033] Because the first heating element 21 and the second heating element 22 are spatially separated, their respective heating power and temperature can be adjusted independently. If the two were in close contact or overlapped, the heat would interfere with each other, making it difficult to form a stable axial temperature gradient. In addition, the spatial separation provides a certain degree of thermal isolation, reducing thermal crosstalk, and the separated first heating element 21 and second heating element 22 are easier to install, maintain, and replace.

[0034] Furthermore, the quartz tube 1 includes a first tube body and a second tube body. The second tube body is disposed on one side of the first tube body and communicates with the first tube body. The first tube body has a first receiving cavity 11, and the second tube body has a second receiving cavity 12.

[0035] The two independent first accommodating cavities 11 and second accommodating cavity 12 can be used to place different materials, and because the two cavities are connected, the molten polycrystalline raw materials can be transported, which facilitates crystal growth. It should be noted that the daughter crystal in this embodiment is cylindrical and straight.

[0036] In summary, this embodiment of the invention provides a crystal rod growth apparatus. First, the second heating component 22 heats the second accommodating cavity 12 to heat the seed crystal. Then, the first heating component 21 heats the first accommodating cavity 11 to heat the polycrystalline raw material. This causes the molten polycrystalline material to flow into the second accommodating cavity 12 and grow horizontally from the seed crystal into a single crystal structure. Compared to the seed crystal growth method at the bottom, this embodiment uses the above method, allowing for horizontal growth, resulting in faster crystal formation and higher production efficiency. Furthermore, by independently heating multiple zones, the temperature gradient can be more precisely controlled, reducing thermal stress and defects.

[0037] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of the present utility model, and these improvements and substitutions should also be considered within the protection scope of the present utility model.

Claims

1. A crystal rod growth apparatus, characterized in that, It includes a quartz tube, multiple heating structures, and a control unit; the quartz tube includes a first accommodating cavity for accommodating polycrystalline raw materials and a second accommodating cavity for accommodating daughter crystals, the first accommodating cavity and the second accommodating cavity being in communication; Multiple heating structures are arranged sequentially along the length of the quartz tube. Each heating structure includes a first heating component and a second heating component. The first heating component is arranged around the outer periphery of the first accommodating cavity to heat the polycrystalline raw material, and the second heating component is arranged around the outer periphery of the second accommodating cavity to heat the daughter crystal. The control unit is electrically connected to the first heating component and the second heating component.

2. The crystal rod growth apparatus according to claim 1, characterized in that, The first heating assembly includes a first heating element and a first wire. The first heating element is arranged around the outer periphery of the first accommodating cavity. The first wire is connected to the first heating element and is electrically connected to the control unit.

3. The crystal rod growth apparatus according to claim 2, characterized in that, The first heating element is annular, and a first notch is formed on one side of the first heating element.

4. The crystal rod growth apparatus according to claim 2, characterized in that, The first heating element has a plurality of first heat dissipation holes, which are spaced apart along the extension direction of the first heating element to form a first heat dissipation hole group, and the plurality of first heat dissipation hole groups are spaced apart along the height direction of the first heating element.

5. The crystal rod growth apparatus according to claim 1, characterized in that, The second heating component includes a second heating element and a second wire. The second heating element is arranged around the outer periphery of the second accommodating cavity. The second wire is connected to the second heating element and is electrically connected to the control unit.

6. The crystal rod growth apparatus according to claim 5, characterized in that, The second heating element is annular, and a second notch is formed on one side of the second heating element.

7. The crystal rod growth apparatus according to claim 5, characterized in that, The second heating element has a plurality of second heat dissipation holes, which are spaced apart along the extension direction of the second heating element to form a second heat dissipation hole group, and the plurality of second heat dissipation hole groups are spaced apart along the height direction of the second heating element.

8. The crystal rod growth apparatus according to claim 1, characterized in that, The first heating component and the second heating component are spaced apart along the radial direction of the quartz tube.

9. The crystal rod growth apparatus according to claim 1, characterized in that, The heating structure further includes a substrate, which is hollow and includes a first mounting cavity for placing the first heating component and a second mounting cavity for placing the second heating component. The first mounting cavity and the second mounting cavity are in communication.

10. The crystal rod growth apparatus according to claim 1, characterized in that, The quartz tube includes a first tube body and a second tube body. The second tube body is disposed on one side of the first tube body and communicates with the first tube body. The first tube body has a first receiving cavity, and the second tube body has a second receiving cavity.

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