Thermal head monitoring device and semiconductor thermal test device

Abstract

The present disclosure provides a thermal head monitoring device and a semiconductor thermal test device, comprising: a thermal head, a temperature sensor, and a temperature control circuit; the temperature control circuit is connected with the temperature sensor through a temperature sensor interface and connected with the thermal head through a thermal head connection end; during the test, the thermal head can be placed above the target semiconductor device; during the temperature measurement of the thermal head on the target semiconductor, the temperature fluctuation of the thermal head is monitored in real time through the temperature sensor, and a temperature feedback signal is provided to the temperature control circuit; the temperature control circuit compares the received temperature feedback signal with a preset temperature control range, and adjusts the working frequency of the thermal head in real time according to the comparison result. Through real-time monitoring and adjustment of the working state of the thermal head, damage to the thermal head is avoided, and damage to the measured target semiconductor caused by loss of the thermal head is also avoided.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a thermistor monitoring device and a semiconductor thermistor testing device. Background Technology

[0002] After semiconductor chip manufacturing is completed, high-precision testing is typically required to ensure their quality and performance. During testing, the thermal probe, as a key component providing a stable temperature environment, significantly impacts the accuracy and reliability of the test results. However, with prolonged use, the internal materials of the thermal probe may gradually crack due to long-term heat exposure and mechanical stress, potentially leading to internal short circuits. Short circuits not only cause power trips in the testing equipment, interrupting the testing process, but can also cause irreversible physical damage to the semiconductor chip, such as thermal stress cracks and metallization peeling, due to sudden power outages or abnormal heat release. This severely affects the product's appearance, electrical performance, and overall yield. Therefore, the operating status of the thermal probe needs to be monitored closely during testing. Utility Model Content

[0003] This disclosure provides a thermal head monitoring device and a semiconductor thermal testing device to solve the problem that existing methods ignore the working status of the thermal head during testing, causing damage to the semiconductor chip under test.

[0004] Based on the above problems, in the first aspect, a thermal head monitoring device is proposed, comprising: a thermal head, a temperature sensor, and a temperature control circuit; The thermal head is used to measure the temperature of the target semiconductor device; The temperature sensor is used to monitor the temperature fluctuation of the thermal head in real time and provide a temperature feedback signal to the temperature control circuit. The temperature control circuit is connected to the temperature sensor via a temperature sensor interface and to the thermal head via a thermal head connection terminal; it is used to compare the temperature feedback signal with a preset temperature control range and adjust the operating frequency of the thermal head according to the comparison result.

[0005] In conjunction with the first aspect, in one possible implementation, the temperature control circuit includes: a comparator circuit, a microprocessor, and a PWM hardware unit connected in sequence; the comparator circuit is used to compare the temperature feedback signal received through the temperature sensor interface with a preset temperature control range, and provide the comparison result to the microprocessor; the microprocessor is used to receive the comparison result, determine a target duty cycle, and send a PWM signal to the PWM hardware unit according to the target duty cycle; the PWM hardware unit is used to output a corresponding electrical signal to the thermal head through the thermal head connection terminal according to the PWM signal, so as to adjust the operating frequency of the thermal head.

[0006] In conjunction with the first aspect, in one possible implementation, the PWM hardware unit includes: a transistor; the base of the transistor is connected to a preset pin of the microprocessor; the emitter of the transistor is connected to the thermistor; the collector of the transistor is connected to a power supply; the transistor is configured to provide a first current to the base of the transistor when the microprocessor outputs a high level, so that the transistor enters a saturation state and increases the power of the thermistor; and to cause the transistor to enter a cutoff state when the microprocessor outputs a low level, thereby reducing the power of the thermistor; the PWM hardware unit further includes: a current-limiting resistor; the current-limiting resistor is disposed between the microprocessor and the base.

[0007] In conjunction with the first aspect, in one possible implementation, the device further includes: a short-circuit detection circuit; the short-circuit detection circuit includes: a first control unit and an electrical signal monitoring circuit; the electrical signal monitoring circuit includes a current monitoring circuit and / or a voltage monitoring circuit; the electrical signal monitoring circuit is configured to connect to the thermal head, monitor the corresponding electrical signal of the thermal head in real time, and provide it to the first control unit; the first control unit is configured to monitor the electrical signal fluctuation of the thermal head in real time; and send an early warning signal when abnormal fluctuations are detected.

[0008] In conjunction with the first aspect, in one possible implementation, the current monitoring circuit includes: a current sensor and an amplification and filtering circuit; the current sensor is disposed between the connection terminal of the thermistor in the temperature control circuit and the thermistor; the amplification and filtering circuit is used to acquire the current of the current sensor, amplify and filter it, and transmit it to the first control unit.

[0009] In conjunction with the first aspect, in one possible implementation, the voltage monitoring circuit includes: a voltage sensor and a voltage follower circuit; the voltage sensor includes a voltage divider resistor; the voltage divider resistor is connected in parallel with the thermistor; the voltage follower circuit is used to acquire the voltage divided by the voltage divider resistor, and transmit it to the first control unit after passing through the buffer isolation.

[0010] In conjunction with the first aspect, in one possible implementation, the first control unit is further configured to pre-detect the short-circuit risk of the thermal head via the electrical signal; and to send a warning signal if a short-circuit risk is detected.

[0011] In conjunction with the first aspect, in one possible implementation, the device further includes: a second control unit; the second control unit is configured to receive temperature feedback signals from the temperature sensor to monitor the operating status of the thermal head and adjust the temperature control strategy of the temperature control circuit; control the operating status of the temperature control circuit; and monitor the operating status of the short-circuit detection circuit.

[0012] In conjunction with the first aspect, in one possible implementation, the device further includes: a display unit; the second control unit, which is further configured to record the monitoring data obtained from the monitoring and display all or part of it through the display unit; and to receive a warning signal sent by the short-circuit detection circuit, issue an alarm, and trigger a protection mechanism.

[0013] In a second aspect, a semiconductor thermistor testing apparatus is provided, comprising: a semiconductor chip under test and a thermistor monitoring device as described in the first aspect or any possible embodiment in conjunction with the first aspect.

[0014] The beneficial effects of the embodiments disclosed herein include: This disclosure provides a thermistor monitoring device and a semiconductor thermistor testing device, comprising: a thermistor, a temperature sensor, and a temperature control circuit; the temperature control circuit is connected to the temperature sensor via a temperature sensor interface and to the thermistor via a thermistor connection terminal; during testing, the thermistor can be placed above the target semiconductor device. During temperature measurement of the target semiconductor by the thermistor, the temperature sensor monitors the temperature fluctuation of the thermistor in real time and provides a temperature feedback signal to the temperature control circuit. The temperature control circuit compares the received temperature feedback signal with a preset temperature control range and adjusts the operating frequency of the thermistor in real time based on the comparison result. By monitoring and adjusting the operating status of the thermistor in real time, damage to the thermistor and damage to the target semiconductor under test caused by the loss of the thermistor are avoided. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a thermal head monitoring device provided in an embodiment of the present disclosure; Figure 2 This is a schematic diagram of the temperature control circuit provided in an embodiment of the present disclosure; Figure 3 This is a schematic diagram of the structure of the PWM hardware unit provided in the embodiments of this disclosure; Figure 4The working principle and circuit design diagram of the temperature control circuit provided in the embodiments of this disclosure; Figure 5 This is a schematic diagram of the short-circuit detection circuit provided in an embodiment of the present disclosure; Figure 6 This is a schematic diagram of the current monitoring circuit provided in an embodiment of the present disclosure; Figure 7 This is a schematic diagram of the voltage monitoring circuit provided in an embodiment of the present disclosure; Figure 8 This is a schematic diagram of the structure of a semiconductor thermistor testing device provided in an embodiment of this disclosure. Detailed Implementation

[0016] This disclosure provides a method and related equipment for determining a path loss compensation factor. Preferred embodiments of this disclosure are described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustrative and explanatory purposes only and are not intended to limit the scope of this disclosure. Furthermore, the embodiments and features described herein can be combined with each other unless otherwise specified.

[0017] This disclosure provides a thermal head monitoring device, such as... Figure 1 As shown, it includes: a thermal head 101, a temperature sensor 102, and a temperature control circuit 103; Thermistor 101 is used to measure the temperature of a target semiconductor device; Temperature sensor 102 is used to monitor the temperature fluctuation of the thermal head 101 in real time and provide temperature feedback signal to the temperature control circuit 103; The temperature control circuit 103 is connected to the temperature sensor 102 through the temperature sensor interface and to the thermal head 101 through the thermal head connection terminal; it is used to compare the temperature feedback signal with the preset temperature control range and adjust the operating frequency of the thermal head 101 according to the comparison result.

[0018] The thermal head monitoring device provided in this disclosure adjusts the operating frequency of the thermal head 101 in real time through the temperature control circuit 103, thereby realizing real-time monitoring and adjustment of the working status of the thermal head, avoiding damage to the thermal head, and also avoiding damage to the semiconductor of the target device under test due to the loss of the thermal head.

[0019] Furthermore, in this embodiment, the thermal head can be made of a special alloy material, specifically one with excellent heat resistance, fatigue resistance, and durability, to reduce material cracking caused by long-term use, thereby lowering the risk of short circuits. The temperature sensor can be highly accurate, monitoring temperature fluctuations of the thermal head in real time, providing precise temperature feedback signals to the intelligent temperature control circuit, and ensuring the accuracy and stability of temperature control.

[0020] In yet another embodiment provided in this disclosure, such as Figure 2 As shown, the temperature control circuit 103 includes: a comparator circuit 1031, a microprocessor 1032, and a PWM hardware unit 1033 connected in sequence; Comparison circuit 1031 is used to compare the temperature feedback signal received through the temperature sensor interface with the preset temperature control range, and provide the comparison result to the microprocessor. The microprocessor 1032 is used to receive the comparison result, determine the target duty cycle, and send a PWM signal to the PWM hardware unit 1033 according to the target duty cycle; The PWM hardware unit 1033 is used to output a corresponding electrical signal to the thermal head 101 through the thermal head connection terminal according to the PWM signal, so as to adjust the operating frequency of the thermal head 101.

[0021] In this embodiment, the comparison between the temperature feedback signal of the thermal head 101 and the preset temperature control range can be achieved through the comparison circuit 1031. The comparison circuit 1031 can be implemented as an operational amplifier, which connects the two analog signals to be compared (the temperature feedback signal of the thermal head 101 and the preset temperature control range signal) to the non-inverting input and the inverting input of the transport amplifier, respectively, and inputs a high level or a low level according to the magnitude of the two input signals. The preset temperature control range can be set according to the actual operating parameters of the thermal head 101, which will not be elaborated here.

[0022] Furthermore, the microprocessor 1032 can obtain the comparison result determined by the comparator circuit 1031 through a preset pin, and determine whether the power of the thermal head 101 needs to be controlled based on the comparison result, such as whether the actual temperature is lower than the lower limit of the preset temperature control range or higher than the upper limit of the preset temperature control range. The heating power of the thermal head 101 can be controlled by adjusting the duty cycle (pulse conduction time / total cycle time). When the actual temperature is lower than the aforementioned lower limit (e.g., actual 25℃ < target 30℃), the microprocessor 1032 can control the increase of the PWM duty cycle (e.g., from 30% to 80%), that is, the thermal head is powered on for a longer heating time, the average power is higher, and the temperature rises rapidly; when the actual temperature is close to the target range (e.g., 32℃), the microprocessor 1032 can decrease the duty cycle (e.g., reduce it to 20%) to reduce the heating power and avoid temperature overshoot. When the actual temperature is higher than the aforementioned upper limit (e.g., 36℃ > 35℃), the microprocessor 1032 can adjust the duty cycle to 0%, stop heating, and the temperature will naturally decrease.

[0023] The PWM hardware unit 1033 can output electrical signals to the thermal head 101 according to the corresponding pulse conduction time under the control of the microprocessor 1032, so as to realize the power control of the thermal head 101.

[0024] In yet another embodiment provided in this disclosure, such as Figure 3 As shown, the PWM hardware unit 1033 includes: transistor Q1; The base B of transistor Q1 is connected to a preset pin of microprocessor 1032; the emitter E of transistor Q1 is connected to the thermal head 101; and the collector C of transistor Q1 is connected to the power supply. Transistor Q1 is used to provide a first current to the base B of transistor Q1 when the microprocessor 1032 outputs a high level, so that transistor Q1 enters the saturation state and increases the power of the thermal head 101. When the microprocessor 1032 outputs a low level, the transistor Q1 enters the cutoff state, reducing the power of the thermal head 101; The aforementioned PWM hardware unit 1033 also includes a current-limiting resistor R1; the current-limiting resistor R1 is located between the microprocessor 1032 and the base B.

[0025] In this embodiment, transistor Q1 acts as an "electronic switch" and can be controlled by a PWM signal to quickly switch between on (load powered on) and off (load powered off) states, thereby achieving precise control over the on / off time of the thermal head 101. Transistor Q1 can be implemented as an NPN transistor, etc.

[0026] During the operation of transistor Q1, when the PWM signal is high: the microprocessor 1032 outputs a high level (e.g., 3.3V or 5V), providing current to the base B of transistor Q1 through the current-limiting resistor R1. .when Large enough (satisfies the transistor's saturation conduction condition: ,in It is the collector current. (This refers to the current amplification factor of the transistor). When the transistor enters saturation, the voltage drop between the collector and emitter... The voltage is approximately 0.2V (approximately a short circuit). At this point, almost all of the power supply voltage is applied to the thermal head 101, causing the thermal head to heat up.

[0027] When the PWM signal is low: the microprocessor 1032 outputs a low level (e.g., 0V), there is no current at the base B, the transistor is cut off, the collector C and emitter E are approximately open, no current flows through the thermistor 101, and heating stops.

[0028] Figure 4 This document describes the working principle and circuit design of the temperature control circuit 103, including the input of the temperature sensor, the processing of the temperature control circuit, and the control signal output to the thermal head.

[0029] In yet another embodiment provided in this disclosure, such as Figure 5As shown, the device further includes: a short-circuit detection circuit 301; the short-circuit detection circuit 301 includes: a first control unit 3011 and an electrical signal monitoring circuit 3012; the electrical signal monitoring circuit 3012 includes: a current monitoring circuit and / or a voltage monitoring circuit; The electrical signal monitoring circuit 3012 is used to connect to the thermal head 101, monitor the corresponding electrical signal of the thermal head 101 in real time, and provide it to the first control unit 3011. The first control unit 3011 is used to monitor the electrical signal fluctuation of the thermal head 101 in real time and to send an early warning signal when abnormal fluctuations are detected.

[0030] In this embodiment of the disclosure, to further monitor and protect the thermal head 101, a short-circuit detection circuit 301 can be set up, and an electrical signal monitoring circuit 3012 can monitor the electrical signal fluctuation of the thermal head 101 in real time. The electrical signal may include current and / or voltage. Once an abnormal current or voltage signal is detected, a short-circuit detection signal is immediately sent to the first control unit 3011 to trigger a fast protection response mechanism.

[0031] In yet another embodiment provided in this disclosure, such as Figure 6 As shown, the current monitoring circuit includes: a current sensor 401 and an amplification and filtering circuit 402; The current sensor 401 is disposed between the connection terminal of the thermal head and the thermal head 101 in the temperature control circuit 103; The amplification and filtering circuit 402 is used to acquire the current of the current sensor 401, and after amplification and filtering, transmit it to the first control unit 3011.

[0032] In this embodiment, the current monitoring circuit may include a current sensor 401 connected in series in the current path flowing through the thermistor 101 to monitor the current of the thermistor 101 and transmit the data to the first control unit 3011 through amplification and filtering. The current sensor 401 may be implemented as a shunt resistor or other types of current sensors. When using a shunt resistor, the input terminal of the amplification and filtering circuit 402 can be set across the shunt resistor to measure the voltage across the shunt resistor, indirectly determining the current of the thermistor 101; this will not be elaborated further here.

[0033] In yet another embodiment provided in this disclosure, such as Figure 7 As shown, the voltage monitoring circuit includes: a voltage sensor 501 and a voltage follower circuit 502; the voltage sensor 501 includes voltage divider resistors R2 and R3; Voltage divider resistors R2 and R3 are connected in parallel with the thermal head 101; The voltage follower circuit 502 is used to obtain the voltage division of the voltage divider resistors R2 and R3, and transmit it to the first control unit 3011 after buffering and isolation.

[0034] In this embodiment, the current monitoring circuit may include a voltage sensor 501 connected in parallel across the thermistor. The voltage division ratio can be designed according to the voltage range of the thermistor 101 (e.g., converting 24V to 3.3V to supply the first control unit 3011). Additionally, the voltage sensor 501 may also include a capacitor C to filter out high-frequency glitches.

[0035] In another embodiment provided in this disclosure, the first control unit 3011 is further configured to pre-detect the short-circuit risk of the thermal head 101 via an electrical signal; and to send a warning signal if a short-circuit risk is detected.

[0036] In this embodiment, the short-circuit detection circuit 301 not only provides a real-time detection mechanism—using high-speed response current and / or voltage sensors to monitor current and voltage fluctuations in the thermal head 101 in real time. Once an abnormal current or voltage signal is detected, a short-circuit detection signal is immediately sent to the control unit, triggering a rapid protection response mechanism—it also provides a short-circuit risk prevention mechanism: by continuously monitoring minute changes in the electrical parameters (such as resistance and capacitance) of the thermal head 101, combined with advanced data analysis algorithms, potential short-circuit risks are predicted. Once an abnormal change is detected, an early warning signal is immediately sent to the first control unit 3011, reminding the operator to take preventative measures in advance.

[0037] The data analysis algorithm may include regression analysis, which predicts potential short-circuit risks by monitoring the changing trends of the electrical parameters (voltage, current, resistance) of the thermistor 101. The voltage, current, and other electrical parameters of the thermistor 101 can be input, and the resistance detection value of the thermistor 101 can be output. The training process will not be detailed here.

[0038] While existing semiconductor chip testing equipment on the market is equipped with certain temperature control and short-circuit protection mechanisms, it often focuses on emergency handling after a short circuit occurs, such as simple power disconnection or equipment restart, lacking the ability to prevent short-circuit risks in advance and monitor them in real time. This disclosure provides an offline testing device that can comprehensively prevent thermistor short circuits, monitor short-circuit status in real time, and respond rapidly when a short circuit occurs. This is of great significance for improving the stability, reliability, and product quality of semiconductor chip testing.

[0039] In yet another embodiment provided in this disclosure, the apparatus further includes: a second control unit; The second control unit is used to receive the temperature feedback signal from the temperature sensor 102 to monitor the working status of the thermal head 101 and adjust the temperature control strategy of the temperature control circuit 103; control the operating status of the temperature control circuit 103; and monitor the operating status of the short circuit detection circuit 301.

[0040] In this embodiment, the second control unit serves as the central control system of the entire device. It is responsible for receiving temperature feedback signals from the temperature sensor 102 and adjusting the temperature control strategy of the temperature control circuit 103 based on these signals (e.g., adjusting the preset temperature control range). It is also responsible for controlling the operating status of the temperature control circuit 103 (e.g., controlling the start-up and cut-off of the temperature control circuit, powering on the thermistor 101, and controlling the electrical parameters of the thermistor 101). Furthermore, it is responsible for monitoring the operating status of the short-circuit detection circuit 301 (e.g., operating voltage, current, power, etc.). This allows it to trigger alarm and protection mechanisms when necessary. The second control unit can connect to corresponding devices via pins to obtain corresponding monitoring information, which is not shown in the figure and will not be described further here.

[0041] In yet another embodiment provided in this disclosure, the device further includes: a display unit; The second control unit is also used to record the monitoring data obtained from the monitoring and display all or part of it through the display unit; and to receive the warning signal sent by the short circuit detection circuit 301, issue an alarm and trigger the protection mechanism.

[0042] In this embodiment, upon receiving a short-circuit detection signal, the second control unit immediately triggers an alarm mechanism to alert the operator and prompt appropriate action. Based on a preset protection strategy, the second control unit rapidly implements protective response measures, such as cutting off power or activating the backup cooling system, to prevent further damage to the semiconductor chip from the short circuit. The second control unit also records the occurrence time, duration, and changes in relevant electrical parameters of the short-circuit event for subsequent fault analysis and improvement.

[0043] The second control unit also features an intuitive user interface and powerful data processing capabilities, making it easy for operators to set parameters, monitor status, and record data.

[0044] In practice, the microprocessor, the first control unit, and the second control unit in this embodiment may be inherited from a single control chip or may use different control chips; no restrictions are imposed here.

[0045] This disclosure also provides a semiconductor thermistor testing device, such as... Figure 8 As shown, it includes: a semiconductor chip under test and a thermal head monitoring device as described in any of the above embodiments.

[0046] like Figure 8As shown, the semiconductor thermal testing device includes: a base 601, a gate-shaped bracket 602, and a chip under test; the base 601 is provided with a test position 6011, and the test position 6011 is provided with a pressure sensor and the chip under test; the gate-shaped bracket 602 is disposed on the base 601, and a cylinder 6021 is disposed on the gate-shaped bracket 602; the cylinder 6021 corresponds to the test position 6011, and the thermal head 6022 is disposed at the end of the cylinder 6021; Cylinder 6021 is used to push the end thermal head 6022 downward during the test until it contacts the chip under test and applies a preset pressure; the preset pressure is sensed by a pressure sensor. The thermal head monitoring device 603 is used to monitor and adjust the working status of the thermal head during the testing process.

[0047] The following is a specific implementation method: 1. Equipment assembly and commissioning: According to the structural design drawings, each component is precisely assembled to ensure that the connection between each part is firm and reliable.

[0048] o Conduct comprehensive functional testing and debugging on the assembled device to ensure that the components work together properly and achieve the expected short-circuit prevention and detection functions.

[0049] 2. Parameter settings and optimization: o The preset temperature range, temperature control accuracy, and monitoring parameters and alarm thresholds of the short circuit prevention and real-time detection module can be set through the control unit's operating interface.

[0050] Based on the testing requirements of semiconductor chips and the characteristics of the thermal head, the parameters are optimized and adjusted to ensure the smooth progress of the testing process and the stable improvement of product quality.

[0051] 3. Testing Process and Monitoring: o Start the semiconductor thermal testing device during semiconductor chip testing.

[0052] The temperature sensor monitors the temperature fluctuations of the thermal head in real time and transmits the data to the intelligent temperature control circuit and control unit.

[0053] The intelligent temperature control circuit automatically adjusts the heating or cooling power of the thermal head according to preset parameters to maintain the stability of the testing environment.

[0054] The short-circuit detection circuit continuously monitors changes in the electrical parameters of the thermal probe and determines whether there is a short-circuit risk or whether a short-circuit event has already occurred.

[0055] 4. Early warning and response measures: Once the short-circuit detection circuit detects a potential short-circuit risk or a short-circuit event has occurred, it immediately sends a signal to the control unit.

[0056] Upon receiving the signal, the control unit triggers an alarm mechanism to remind operators to perform inspections and maintenance.

[0057] According to the preset protection strategy, corresponding countermeasures are taken, such as cutting off the power supply and starting the backup cooling system, to prevent the short circuit from causing further damage to the semiconductor chip.

[0058] 5. Data recording and analysis: The control unit records temperature data, the operating status of the short-circuit detection circuit, and the triggering of any warnings or countermeasures throughout the entire test process.

[0059] Operators can analyze this data to understand the performance of semiconductor chips under different temperature environments and the effectiveness of short-circuit detection circuits, providing a reference for subsequent process optimization and product design.

[0060] Through the above specific embodiments, the semiconductor thermal testing device provided by this utility model can realize comprehensive short-circuit prevention and real-time detection functions in the semiconductor chip testing process, ensuring the smooth progress of the testing process and the steady improvement of product quality.

[0061] The semiconductor thermistor testing apparatus provided in this disclosure includes: 1. Significant short-circuit prevention effect: By continuously monitoring the changes in the electrical parameters of the thermal probe and combining them with advanced data analysis algorithms, potential short-circuit risks can be predicted in advance, and effective preventive measures can be taken, significantly reducing the probability of short circuits.

[0062] 2. Extremely fast short-circuit detection and response: Employing high-speed current and / or voltage sensors and an advanced control unit design, it can quickly detect abnormal signals and trigger protection response mechanisms the instant a short circuit occurs, effectively reducing the possibility of damage to semiconductor chips.

[0063] 3. Precise and stable temperature control: Through the coordinated operation of a high-precision temperature sensor and an intelligent temperature control circuit, precise control and stable maintenance of the temperature of the thermal head are achieved, providing a stable testing environment for semiconductor chips.

[0064] 4. Product appearance quality and electrical performance are guaranteed: Through a comprehensive short-circuit prevention and real-time detection mechanism, physical damage to semiconductor chips caused by power tripping and abnormal heat release due to short circuits is avoided, ensuring the stability of product appearance quality and electrical performance.

[0065] 5. Simple operation and easy maintenance: The control unit features an intuitive user interface and powerful data processing capabilities, facilitating parameter setting, status monitoring, and data recording by operators. Furthermore, the device's design prioritizes maintainability, making the replacement and maintenance of the thermal head simple and easy.

[0066] Those skilled in the art will understand that the modules in the apparatus of the embodiments can be distributed in the apparatus of the embodiments as described in the embodiments, or they can be located in one or more devices different from this embodiment with corresponding changes. The modules of the above embodiments can be combined into one module, or they can be further divided into multiple sub-modules.

[0067] The sequence numbers of the embodiments disclosed above are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0068] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, this disclosure is also intended to include such modifications and variations.

Claims

1. A thermal head monitoring device, characterized in that, include: Thermistor, temperature sensor, and temperature control circuit; The thermal head is used to measure the temperature of the target semiconductor device; The temperature sensor is used to monitor the temperature fluctuation of the thermal head in real time and provide a temperature feedback signal to the temperature control circuit. The temperature control circuit is connected to the temperature sensor via a temperature sensor interface and to the thermal head via a thermal head connection terminal; it is used to compare the temperature feedback signal with a preset temperature control range and adjust the operating frequency of the thermal head according to the comparison result.

2. The apparatus as claimed in claim 1, characterized in that, The temperature control circuit includes: a comparator circuit, a microprocessor, and a PWM hardware unit connected in sequence; The comparison circuit is used to compare the temperature feedback signal received through the temperature sensor interface with the preset temperature control range, and to provide the comparison result to the microprocessor. The microprocessor is used to receive the comparison result, determine the target duty cycle, and send a PWM signal to the PWM hardware unit according to the target duty cycle; The PWM hardware unit is used to output a corresponding electrical signal to the thermal head through the thermal head connection terminal according to the PWM signal, so as to adjust the operating frequency of the thermal head.

3. The apparatus as described in claim 2, characterized in that, The PWM hardware unit includes: a transistor; The base of the transistor is connected to a preset pin of the microprocessor; the emitter of the transistor is connected to the thermistor; and the collector of the transistor is connected to the power supply. The transistor is used to provide a first current to the base of the transistor when the microprocessor outputs a high level, so that the transistor enters a saturation state and increases the power of the thermal head; When the microprocessor outputs a low level, the transistor enters the cutoff state, reducing the power of the thermal head; The PWM hardware unit shown also includes a current-limiting resistor; the current-limiting resistor is disposed between the microprocessor and the base.

4. The apparatus as claimed in claim 1, characterized in that, The device further includes: a short-circuit detection circuit; the short-circuit detection circuit includes: a first control unit and an electrical signal monitoring circuit; the electrical signal monitoring circuit includes a current monitoring circuit and / or a voltage monitoring circuit; The electrical signal monitoring circuit is used to connect to the thermal head, monitor the corresponding electrical signal of the thermal head in real time, and provide it to the first control unit. The first control unit is used to monitor the electrical signal fluctuation of the thermal head in real time and to send an early warning signal when abnormal fluctuations are detected.

5. The apparatus as described in claim 4, characterized in that, The current monitoring circuit includes: a current sensor and an amplification and filtering circuit; The current sensor is disposed between the connection terminal of the thermal head and the thermal head in the temperature control circuit. The amplification and filtering circuit is used to acquire the current of the current sensor, amplify and filter it, and then transmit it to the first control unit.

6. The apparatus as claimed in claim 4, characterized in that, The voltage monitoring circuit includes: a voltage sensor and a voltage follower circuit; the voltage sensor includes voltage divider resistors; The voltage divider resistor is connected in parallel with the thermistor; The voltage follower circuit is used to obtain the voltage divided by the voltage divider resistor, and transmit it to the first control unit after buffering and isolation.

7. The apparatus as claimed in claim 5, characterized in that, The first control unit is further configured to pre-detect the short-circuit risk of the thermal head through the electrical signal; and to send a warning signal if a short-circuit risk is detected.

8. The apparatus according to any one of claims 4-7, characterized in that, The device further includes: a second control unit; The second control unit is used to receive the temperature feedback signal from the temperature sensor to monitor the working status of the thermal head and adjust the temperature control strategy of the temperature control circuit; control the operating status of the temperature control circuit; and monitor the operating status of the short circuit detection circuit.

9. The apparatus as claimed in claim 8, characterized in that, The device further includes: a display unit; The second control unit is also used to record the monitoring data obtained from the monitoring and display all or part of it through the display unit; and to receive the warning signal sent by the short circuit detection circuit, issue an alarm and trigger the protection mechanism.

10. A semiconductor thermistor testing device, characterized in that, include: The semiconductor chip under test and the thermal head monitoring device as described in any one of claims 1-9.

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