A photomask structure

Abstract

The utility model provides a photomask structure, photomask structure includes: pattern layer group, including at least two pattern layers, one pattern layer is located the top of another pattern layer, two pattern layers parallelly arranged, is equipped with photoetching pattern on the pattern layer, control assembly is set up in the outside of every pattern layer to change the transparency of every pattern layer, and the light -transmitting glass layer is set up in the top of pattern layer group, wherein, in pattern layer group, one of pattern layer is not transparent, and other pattern layer is transparent, the utility model can reduce the production, management and maintenance cost of photomask structure.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a photomask structure. Background Technology

[0002] Photolithography is a process that transfers patterns from a photomask (mask) onto the surface of a wafer. Photomasks are composed of materials such as quartz glass and chromium. The process of converting a wafer into a semiconductor chip requires dozens of photomasks, and different photomasks may be used in the photolithography and etching processes. This increases the production, management, and maintenance costs of photomasks. Therefore, there are areas for improvement. Utility Model Content

[0003] This invention provides a photomask structure to improve the technical problem of high production, management and maintenance costs of photomasks in the prior art.

[0004] The photomask structure provided by this utility model includes:

[0005] A patterned layer group includes at least two patterned layers, one of which is located on top of the other, the two patterned layers are arranged in parallel, and the patterned layers are provided with photolithographic patterns.

[0006] A control component, disposed outside each of the pattern layers, is used to change the transparency of each of the pattern layers; and

[0007] A light-transmitting glass layer is disposed on top of the pattern layer group;

[0008] In the pattern layer group, one of the pattern layers is opaque, while the other pattern layers are transparent.

[0009] In one embodiment of the present invention, at least two pattern layers in the pattern layer group are pressure variation pattern layers, and the pressure variation pattern layers are provided with photolithographic patterns;

[0010] The control component includes a pressure regulating layer disposed on top of each of the pressure change pattern layers, and an air pump is connected to the pressure regulating layer outward.

[0011] In one embodiment of the present invention, at least two pattern layers in the pattern layer group are voltage variation pattern layers, and the voltage variation pattern layers are provided with photolithographic patterns;

[0012] The control component includes a power module connected to the outside of each of the voltage variation pattern layers.

[0013] In one embodiment of the present invention, the pattern layer group includes at least one pressure variation pattern layer and at least one voltage variation pattern layer, wherein the pressure variation pattern layer and the voltage variation pattern layer are provided with photolithographic patterns, and the pressure variation pattern layer is disposed on top of the voltage variation pattern layer;

[0014] The control component includes a pressure regulating layer and a power module. The pressure regulating layer is disposed on top of each pressure change pattern layer, and an air pump is connected to the outside of the pressure regulating layer. The power module is connected to the outside of each voltage change pattern layer.

[0015] In one embodiment of the present invention, the pattern layer group includes at least one pressure variation pattern layer and at least one voltage variation pattern layer, wherein the pressure variation pattern layer and the voltage variation pattern layer are provided with photolithographic patterns;

[0016] The control component includes a pressure regulating layer and a power module. The voltage variation pattern layer is disposed on top of the pressure regulating layer. The pressure regulating layer is disposed on top of each pressure variation pattern layer. An air pump is connected to the pressure regulating layer outward. The power module is connected to the outside of each voltage variation pattern layer.

[0017] In one embodiment of the present invention, the photomask structure further includes an antireflective coating layer and an antireflective coating layer, wherein the antireflective coating layer is located on top of the light-transmitting glass layer, and the antireflective coating layer is located on top of the antireflective coating layer.

[0018] In one embodiment of the present invention, the photomask structure further includes a circulating water-cooling layer, which is located at the bottom of the pattern layer group.

[0019] In one embodiment of the present invention, when the pattern layer group includes at least three pattern layers, the photolithographic pattern on the first pattern layer is the same as the photolithographic pattern on the second pattern layer, and the photolithographic pattern on the first pattern layer is different from the photolithographic pattern on the third pattern layer.

[0020] In one embodiment of the present invention, the pressure-changing pattern layer includes a transparent substrate and a pressure-sensitive color-changing layer, the pressure-sensitive color-changing layer being located at the bottom of the transparent substrate, and a photolithographic pattern being formed on the pressure-sensitive color-changing layer.

[0021] In one embodiment of the present invention, the voltage change pattern layer includes a transparent substrate and a liquid crystal color-changing layer, the liquid crystal color-changing layer being located at the bottom of the transparent substrate, and a photolithographic pattern being formed on the liquid crystal color-changing layer.

[0022] The beneficial effects of this utility model are: the photomask structure proposed in this utility model can reduce the production, management and maintenance costs of photomask structures. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of a photomask structure provided in an embodiment of the present invention.

[0025] Figure 2 This is a schematic diagram of a photomask structure provided in another embodiment of the present invention.

[0026] Figure 3 This is a schematic diagram of a photomask structure provided in another embodiment of the present invention.

[0027] Figure 4 This is a schematic diagram of the structure of a voltage change pattern layer provided in an embodiment of the present invention.

[0028] Figure 5 This is a schematic diagram of the structure of a pressure change pattern layer provided in an embodiment of the present invention.

[0029] Explanation of icon numbers

[0030] 10. Transparent glass layer; 20. Pattern layer group; 210. Voltage variation pattern layer; 211. Transparent substrate; 212. Liquid crystal color-changing layer; 220. Pressure variation pattern layer; 222. Pyrochromic layer; 310. Power module; 320. Air pressure regulating layer; 330. Air pump; 410. Anti-reflective coating layer; 420. Anti-reflective coating layer; 50. Circulating water cooling layer; 60. Lens; 70. Wafer; 80. Control module. Detailed Implementation

[0031] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0032] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0033] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the present invention.

[0034] Please see Figures 1 to 5 This invention proposes a photomask structure that can be applied to the photolithography process in semiconductor manufacturing. This invention can reduce the production, management and maintenance costs of the photomask structure. The following is a detailed description through specific embodiments.

[0035] Please see Figure 1 , Figure 2 and Figure 3 The photomask structure provided in one embodiment of the present invention may include a pattern layer group 20, a control component, and a light-transmitting glass layer 10.

[0036] In one embodiment of the present invention, the pattern layer group 20 may include at least two pattern layers, one pattern layer may be located on top of another pattern layer, the two pattern layers are arranged in parallel, and photolithographic patterns may be provided on the pattern layers.

[0037] For example, at least two pattern layers can be pressure-changing pattern layers 220, whose transparency can change under external pressure. At least two pattern layers can also be voltage-changing pattern layers 210, whose transparency can change under an external electric field. Of course, at least two pattern layers can also be one or more pressure-changing pattern layers 220 and one or more voltage-changing pattern layers 210.

[0038] In one embodiment of this invention, a control component may be disposed outside each pattern layer in the pattern layer group 20 to change the transparency of each pattern layer in the pattern layer group 20. The control component may include a power module 310, an air pressure regulating layer 320, and an air pump 330.

[0039] Specifically, the pressure regulating layer 320 is disposed on top of each pressure change pattern layer 220 in the pattern layer group 20. The pressure regulating layer 320 is connected to an air pump 330. When the air pressure in the pressure regulating layer 320 changes, it can be used to change the transparency of the pressure change pattern layer 220.

[0040] Specifically, the power module 310 is connected to the outside of each voltage change pattern layer 210 in the pattern layer group 20. The power module 310 provides an electric field to the outside of the voltage change pattern layer 210. When the electric field provided by the power module 310 changes, it can be used to change the transparency of the voltage change pattern layer 210.

[0041] In one embodiment of this invention, a light-transmitting glass layer 10 is disposed on top of the pattern layer group 20, and the light-transmitting glass layer 10 is used to provide support for the pattern layer group 20. In the photolithography process, in order to ensure the normal use of the pattern layer group 20, under the action of the control component, one of the pattern layers in the pattern layer group 20 can be made opaque while the other pattern layers are transparent.

[0042] Specifically, in pattern layer group 20, one pattern layer is set to opaque and the other pattern layers are set to transparent. This can prevent the photolithography patterns on at least two pattern layers from being transferred to the surface of wafer 70, which would cause the pattern on the surface of wafer 70 to become messy and erroneous.

[0043] Therefore, this embodiment can reduce the production, management, and maintenance costs of the photomask structure. By using a stacked design of at least two pattern layers in the pattern layer group 20, the manufacturing costs of the substrate and architecture in the photomask structure can be saved. In addition, the integrated design of the pattern layer group 20 in this embodiment reduces the management costs of the photomask structure and avoids defects that may occur when the photomask structure is left unattended for a long time.

[0044] Please see Figure 1 In one embodiment of the present invention, the pattern layer group 20 includes at least one pressure change pattern layer 220 and at least one voltage change pattern layer 210, and photolithographic patterns are provided on the pressure change pattern layer 220 and the voltage change pattern layer 210.

[0045] The control components include a pressure regulating layer 320 and a power module 310. A voltage variation pattern layer 210 is disposed on top of the pressure regulating layer 320. The pressure regulating layer 320 is disposed on top of each pressure variation pattern layer 220. An air pump 330 is connected to the outside of the pressure regulating layer 320. The power module 310 is connected to the outside of each voltage variation pattern layer 210.

[0046] Specifically, during the photolithography process of wafer 70, according to the photolithography pattern required for wafer 70, the control components can apply corresponding voltages and pressures, making the pressure-changing pattern layer 220 or voltage-changing pattern layer 210 corresponding to the photolithography pattern required for wafer 70 opaque, while the other pattern layers in the pattern layer group 20 are transparent. Subsequently, during the photolithography process on wafer 70, the photolithography pattern required for wafer 70 can be transferred to the surface of wafer 70.

[0047] In other embodiments of the present invention, the pattern layer group 20 may further include at least one pressure change pattern layer 220 and at least one voltage change pattern layer 210, with photolithographic patterns provided on the pressure change pattern layer 220 and the voltage change pattern layer 210, and the pressure change pattern layer 220 being disposed on top of the voltage change pattern layer 210.

[0048] The control components include a pressure regulating layer 320 and a power module 310. The pressure regulating layer 320 is disposed on top of each pressure change pattern layer 220 and an air pump 330 is connected to the outside of the pressure regulating layer 320. The power module 310 is connected to the outside of each voltage change pattern layer 210.

[0049] Please see Figure 2 In one embodiment of this invention, at least two pattern layers in the pattern layer group 20 are voltage variation pattern layers 210, and photolithographic patterns are provided on the voltage variation pattern layers 210. The control component includes a power module 310, which is connected to the outside of each voltage variation pattern layer 210.

[0050] Specifically, during the photolithography process of wafer 70, according to the photolithography pattern required for wafer 70, the control components can apply a corresponding voltage, making the voltage change pattern layer 210 corresponding to the photolithography pattern required for wafer 70 opaque, while the other voltage change pattern layers 210 in the pattern layer group 20 are transparent. Subsequently, during the photolithography process on wafer 70, the photolithography pattern required for wafer 70 can be transferred to the surface of wafer 70.

[0051] Please see Figure 3 In one embodiment of this utility model, at least two pattern layers in the pattern layer group 20 are pressure variation pattern layers 220, and photolithographic patterns are provided on the pressure variation pattern layers 220. The control component includes a pressure regulating layer 320, which is disposed on the top of each pressure variation pattern layer 220, and an air pump 330 is connected to the pressure regulating layer 320 outward.

[0052] Specifically, during the photolithography process of wafer 70, the control components can apply corresponding pressure according to the photolithography pattern required for wafer 70, making the pressure variation pattern layer 220 corresponding to the photolithography pattern required for wafer 70 opaque, while the other pressure variation pattern layers 220 in the pattern layer group 20 are transparent. Subsequently, during the photolithography process on wafer 70, the photolithography pattern required for wafer 70 can be transferred to the surface of wafer 70.

[0053] Please see Figure 1 In one embodiment of this utility model, a control module 80 can be externally connected to the power module 310 and the air pump 330. The control module 80 can control the power module 310 to turn on and off and control the voltage level. The control module 80 can also control the air pump 330 to turn on and off and control the air pressure level.

[0054] Please see Figure 1 In one embodiment of the present invention, in the pattern layer group 20, when the pattern layer group 20 includes at least three pattern layers, the photolithographic pattern on the first pattern layer is the same as the photolithographic pattern on the second pattern layer, and the photolithographic pattern on the first pattern layer is different from the photolithographic pattern on the third pattern layer.

[0055] Specifically, in the pattern layer group 20, the photolithographic pattern on the first pattern layer is the same as the photolithographic pattern on the second pattern layer. This has the advantage of improving the fault tolerance of the pattern layer group 20. That is, when a defect occurs in the first pattern layer, the second pattern layer can still provide the same photolithographic pattern to complete the photolithography process with the same photolithographic pattern.

[0056] Specifically, in pattern layer group 20, the photolithographic pattern on the first pattern layer is different from the photolithographic pattern on the third pattern layer. This has the advantage of improving the compatibility of pattern layer group 20. That is, when the first pattern layer is opaque and the other pattern layers are transparent, a photolithography process with one photolithographic pattern can be provided, while when the third pattern layer is opaque and the other pattern layers are transparent, a photolithography process with another photolithographic pattern can be provided.

[0057] Please see Figure 1 , Figure 2 and Figure 3 In one embodiment of the present invention, the photomask structure may further include an antireflective coating layer 410 and an antireflective coating layer 420, wherein the antireflective coating layer 420 is located on top of the light-transmitting glass layer 10 and the antireflective coating layer 410 is located on top of the antireflective coating layer 420.

[0058] Specifically, the anti-reflective coating 410 (ARC) and the anti-reflective coating 420 are the same type of thin film. Their main function is to reduce or eliminate the reflection of light at the interface, thereby improving transmittance or reducing the impact of unnecessary reflected light on image quality.

[0059] Please see Figure 1 , Figure 2 and Figure 3 In one embodiment of this invention, the photomask structure further includes a circulating water-cooling layer 50, which is located at the bottom of the pattern layer group 20. The circulating water-cooling layer 50 serves to dissipate heat, effectively preventing exposure defects caused by overheating. A lens 60 can be disposed between the wafer 70 and the circulating water-cooling layer 50. When the light source at the top of the wafer 70 passes through the circulating water-cooling layer 50, the lens 60 can change the illumination angle of the light source toward the wafer 70.

[0060] Please see Figure 4 In one embodiment of the present invention, the voltage change pattern layer 210 may include a transparent substrate 211 and a liquid crystal color-changing layer 212. The liquid crystal color-changing layer 212 is located at the bottom of the transparent substrate 211, and a photolithographic pattern is formed on the liquid crystal color-changing layer 212.

[0061] In one embodiment of this utility model, such as Figure 4 As shown, the structure of the voltage-changing pattern layer 210 is explained with respect to the exposure time. The transparent substrate 211 is transparent. Under the action of an electric field, the arrangement of liquid crystal molecules in the liquid crystal color-changing material changes, and the transparency of the liquid crystal color-changing material varies between 0% and 100%, and the process is reversible, so as to achieve light transmission and opacity. Liquid crystal is a substance between solid and liquid, also known as a mesocrystalline material. It is usually formed by a single compound or a homogeneous mixture of a few compounds. It is not always in a liquid phase; it can be solid under certain pressure / temperature conditions, such as polymer-dispersed liquid crystal (PDLC) materials.

[0062] Specifically, if it is necessary to Figure 4 When the photolithographic pattern on the voltage variation pattern layer 210 is transferred to the surface of the wafer 70, the liquid crystal color-changing layer 212 in the voltage variation pattern layer 210 needs to be set to opaque, while the other pattern layers are set to transparent.

[0063] Specifically, if it is not necessary to... Figure 4 When the photolithographic pattern on the voltage variation pattern layer 210 is transferred to the surface of the wafer 70, the liquid crystal color-changing layer 212 in the voltage variation pattern layer 210 needs to be set to transparent, while one of the other pattern layers needs to be set to opaque.

[0064] Please see Figure 5 In one embodiment of the present invention, the pressure change pattern layer 220 includes a transparent substrate 211 and a pressure-sensitive color-changing layer 222. The pressure-sensitive color-changing layer 222 is located at the bottom of the transparent substrate 211, and a photolithographic pattern is formed on the pressure-sensitive color-changing layer 222.

[0065] In one embodiment of this utility model, such as Figure 4 As shown, the structure of the pressure-changing pattern layer 220 is explained with respect to the exposure time. The transparent substrate 211 is transparent. The pressure-sensitive color-changing material can be a microcapsule material. Under pressure, the arrangement of microcapsule molecules changes, and the transparency of the microcapsule material varies between 0% and 100%, and the process is reversible, thus achieving light transmission and opacity. Pressure-sensitive color-changing materials are usually solid and mainly consist of fully organic or hybrid materials containing organic components, such as metal-organic frameworks or organic-inorganic hybrid halides, etc., and the resolution of pressure-sensitive color change in the visible light region can reach within 100 nm.

[0066] Specifically, if it is necessary to Figure 5 When the photolithographic pattern on the pressure variation pattern layer 220 is transferred to the surface of the wafer 70, the pressure-sensitive color-changing layer 222 in the pressure variation pattern layer 220 needs to be set to opaque, while the other pattern layers are set to transparent.

[0067] Specifically, if it is not necessary to... Figure 5 When the photolithographic pattern on the pressure variation pattern layer 220 is transferred to the surface of the wafer 70, the pressure-sensitive color-changing layer 222 in the pressure variation pattern layer 220 needs to be set to transparent, while one of the other pattern layers needs to be set to opaque.

[0068] In summary, the stacked photomask structure of this invention has the advantage of lower manufacturing cost compared to traditional photomasks. It enables multi-layer patterning within the same mask architecture for application in different photolithography scenarios. Furthermore, this invention has a wide range of applications, breaking the limitations of traditional one-to-one photomasks. It offers low-cost advantages for subsequent photolithography pattern correction, and the integrated photomask structure facilitates management and maintenance, reducing the probability of defects in the photomask structure.

[0069] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model. As used herein and throughout the claims below, unless otherwise specified, "a" and "the" include plural references. Similarly, as used herein and throughout the claims below, unless otherwise specified, "in" means "in" and "on".

Claims

1. A photomask structure, characterized in that, include: A patterned layer group includes at least two patterned layers, one of which is located on top of the other, the two patterned layers are arranged in parallel, and the patterned layers are provided with photolithographic patterns. A control component, located outside each of the pattern layers, is used to change the transparency of each of the pattern layers; as well as A light-transmitting glass layer is disposed on top of the pattern layer group; In the pattern layer group, one of the pattern layers is opaque, while the other pattern layers are transparent.

2. The photomask structure according to claim 1, characterized in that, At least two of the pattern layers in the pattern layer group are pressure variation pattern layers, and the pressure variation pattern layer is provided with a photolithographic pattern. The control component includes a pressure regulating layer disposed on top of each of the pressure change pattern layers, and an air pump is connected to the pressure regulating layer outward.

3. The photomask structure according to claim 1, characterized in that, At least two of the pattern layers in the pattern layer group are voltage variation pattern layers, and the voltage variation pattern layers are provided with photolithographic patterns. The control component includes a power module connected to the outside of each of the voltage variation pattern layers.

4. The photomask structure according to claim 1, characterized in that, The pattern layer group includes at least one pressure change pattern layer and at least one voltage change pattern layer, wherein photolithographic patterns are provided on the pressure change pattern layer and the voltage change pattern layer, and the pressure change pattern layer is disposed on top of the voltage change pattern layer; The control component includes a pressure regulating layer and a power module. The pressure regulating layer is disposed on top of each pressure change pattern layer, and an air pump is connected to the outside of the pressure regulating layer. The power module is connected to the outside of each voltage change pattern layer.

5. The photomask structure according to claim 1, characterized in that, The pattern layer group includes at least one pressure change pattern layer and at least one voltage change pattern layer, wherein the pressure change pattern layer and the voltage change pattern layer are provided with photolithographic patterns; The control component includes a pressure regulating layer and a power module. The voltage variation pattern layer is disposed on top of the pressure regulating layer. The pressure regulating layer is disposed on top of each pressure variation pattern layer. An air pump is connected to the outside of the pressure regulating layer. The power module is connected to the outside of each voltage variation pattern layer.

6. The photomask structure according to claim 1, characterized in that, The photomask structure also includes an antireflective coating and an anti-reflective coating. The anti-reflective coating is located on top of the light-transmitting glass layer, and the antireflective coating is located on top of the anti-reflective coating.

7. The photomask structure according to claim 1, characterized in that, The photomask structure also includes a circulating water-cooling layer, which is located at the bottom of the pattern layer group.

8. The photomask structure according to claim 1, characterized in that, When the pattern layer group includes at least three pattern layers, the photolithographic pattern on the first pattern layer is the same as the photolithographic pattern on the second pattern layer, and the photolithographic pattern on the first pattern layer is different from the photolithographic pattern on the third pattern layer.

9. The photomask structure according to claim 2, characterized in that, The pressure-changing pattern layer includes a transparent substrate and a pressure-sensitive color-changing layer. The pressure-sensitive color-changing layer is located at the bottom of the transparent substrate, and a photolithographic pattern is formed on the pressure-sensitive color-changing layer.

10. The photomask structure according to claim 3, characterized in that, The voltage-changing pattern layer includes a transparent substrate and a liquid crystal color-changing layer. The liquid crystal color-changing layer is located at the bottom of the transparent substrate, and a photolithographic pattern is formed on the liquid crystal color-changing layer.

Images