An ion implantation apparatus

Abstract

The application discloses an ion implantation device, which comprises an ion source, an aluminum source generator, a heating cavity, a solid aluminum source and a flow control device. The solid aluminum source is located in the heating cavity, and the heating cavity is used for heating the solid aluminum source to generate a gaseous aluminum source. The first end of the flow control device is communicated with the heating cavity through a first pipeline, and the second end of the flow control device is communicated with the ionization chamber through a second pipeline. The flow control device is used for controlling the flow of the gaseous aluminum source from the heating cavity to the ionization chamber. According to the ion implantation device, a stable gaseous aluminum source can be provided, and the service life of the ion source is prolonged.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and more specifically to an ion implantation device. Background Technology

[0002] Currently, for ion implantation equipment such as SiC ion implanters, a heater is usually used in the ion source to heat the solid aluminum source, so that the solid aluminum source is converted into a gaseous aluminum source, and then the gaseous aluminum source is ionized to generate aluminum ions. The aluminum ions are accelerated by an electric field to complete the ion implantation of aluminum ions.

[0003] When solid aluminum sources are heated in an ion source, temperature instability can occur due to moisture and other factors, leading to poor uniformity of the gaseous aluminum source and incomplete ionization. This, in turn, affects the stability of the ion beam and the ion implantation effect. Furthermore, prolonged heating of the solid aluminum source can shorten the ion source's lifespan, requiring frequent maintenance.

[0004] Therefore, improvements are needed to at least partially address the aforementioned problems. Utility Model Content

[0005] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, this utility model provides an ion implantation device, which includes: An ion source, the ion source including an ionization chamber; An aluminum source generator includes a heating chamber, a solid aluminum source, and a flow control device. The solid aluminum source is located in the heating chamber, which heats the solid aluminum source to generate a gaseous aluminum source. A first end of the flow control device is connected to the heating chamber via a first pipeline, and a second end of the flow control device is connected to an ionization chamber via a second pipeline. The flow control device controls the flow rate of the gaseous aluminum source from the heating chamber to the ionization chamber.

[0007] For example, the heating chamber includes a receiving cavity, a heater, a temperature sensor, and a temperature control device; The solid aluminum source is located in the receiving cavity; The heater is located in the receiving cavity and is used to heat the solid aluminum source; The temperature sensor is located in the receiving cavity and is used to detect the temperature inside the receiving cavity; The temperature control device is connected to the heater and the temperature sensor, and is used to adjust the heating power of the heater according to the detection result of the temperature sensor, so that the temperature inside the cavity is within a preset temperature range.

[0008] For example, the ion implantation device further includes a first heating band and a second heating band, the first heating band covering the first conduit and the second heating band covering the second conduit.

[0009] For example, the ion implantation device further includes a heating belt and an insulation layer, the heating belt covering the first conduit and the insulation layer covering the second conduit; or, The ion implantation device further includes a heating band and an insulation layer, the heating band covering the second pipeline and the insulation layer covering the first pipeline.

[0010] For example, the ion implantation device further includes a first heat exchange sleeve and a second heat exchange sleeve. The first heat exchange sleeve is sleeved outside the first pipeline, and a first heat exchange medium flow path is formed between the first heat exchange sleeve and the first pipeline. The second heat exchange sleeve is sleeved outside the second pipeline, and a second heat exchange medium flow path is formed between the second heat exchange sleeve and the second pipeline.

[0011] For example, the ion implantation device further includes a heat exchange sleeve and an insulation layer. The heat exchange sleeve is fitted over the outside of the first pipeline, forming a heat exchange medium flow path between the heat exchange sleeve and the first pipeline. The insulation layer covers the second pipeline; or, The ion implantation equipment also includes a heat exchange sleeve and an insulation layer. The heat exchange sleeve is fitted outside the second pipeline, and a heat exchange medium flow path is formed between the heat exchange sleeve and the second pipeline. The insulation layer covers the first pipeline.

[0012] For example, the flow control device is a mass flow controller.

[0013] For example, the solid aluminum source is aluminum trichloride.

[0014] For example, the ion implantation device further includes a gas holder, in which the aluminum source generator is disposed.

[0015] According to the ion implantation equipment of this invention, a separate aluminum source generator is installed outside the ion source to heat a solid aluminum source and generate a gaseous aluminum source. A flow control device controls the flow rate of the gaseous aluminum source from the heating chamber to the ionization chamber, thereby providing a uniform flow of gaseous aluminum source to the ionization chamber, ensuring sufficient ionization and improving the stability of the ion beam and the ion implantation effect. Furthermore, since the aluminum source generator is not located within the ion source, its heating does not affect the ion source, thus significantly extending the service life of the ion source and reducing the need for frequent maintenance. Attached Figure Description

[0016] The following drawings, which are incorporated herein by reference and are used to understand this application, illustrate embodiments of the invention and their descriptions, thereby explaining the apparatus and principles of the invention. In the drawings, Figure 1 This is a schematic structural block diagram of an ion implantation apparatus according to an embodiment of this application; Figure 2 for Figure 1 A schematic block diagram of the heating chamber and temperature controller.

[0017] Explanation of reference numerals in the attached figures: 10-Ion source, 11-Ionization chamber; 20-Gas Holder; 100-Aluminum source generator, 110-Heating chamber, 111-Solid aluminum source, 112-Heater, 113-Temperature sensor, 114-Temperature controller, 120-Flow controller, 130-First pipeline, 140-Second pipeline; 210 - First heating zone, 220 - Second heating zone; 310 - Phosphine gas source, 320 - Mass flow controller, 330 - Nitrogen gas source, 340 - Mass flow controller, 350 - Boron trifluoride gas source, 360 - Mass flow controller. Detailed Implementation

[0018] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0019] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0020] It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0021] Spatial relation terms such as "below," "under," "below," "under," "above," and "above" are used here for convenience to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of devices in use and operation.

[0022] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0023] Embodiments of the utility model are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of this application. Thus, variations in the shown shape can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing processes. Consequently, the figures are substantially schematic, and their shapes are not intended to show the actual shape of the device and are not intended to limit the scope of this application.

[0024] See attached document Figure 1 , 2An ion implantation apparatus according to an embodiment of this application will be described by way of example. The ion implantation apparatus includes an ion source 10 and an aluminum source generator 100.

[0025] The ion source 10 is the core component of the ion implanter. Its function is to ionize the doped source material into plasma containing target ions and provide the raw ion beam for subsequent ion extraction, quality analysis, and acceleration. Its performance directly determines the efficiency, precision, and doping quality of ion implantation. The ion source 10 includes an ionization chamber 11, which is used to ionize the gaseous aluminum source entering it into plasma. Exemplarily, the ionization chamber 11 can be made of a high-temperature resistant metal (such as tungsten, molybdenum, or tungsten-copper alloy) and contains a cathode, an anode, and a magnetic field confinement system. The cathode emits electrons (such as a tungsten filament cathode, heated to above 2000°C by current to emit thermionic electrons); the anode and cathode form an electric field that accelerates electrons to collide with source material molecules, initiating ionization; the magnetic field confinement system includes a permanent magnet or an electromagnetic coil, which generates a magnetic field (usually an axial or radial magnetic field) to extend the electron movement path (similar to "magnetic confinement"), increase the probability of electron collisions with source molecules, and enhance ionization efficiency. In some embodiments, the ionization chamber 11 can generate an alternating electromagnetic field through a high-frequency coil to ionize the source material gas. In some embodiments, the ionization chamber 11 can be used to continuously accelerate electrons and ionize the gas under the action of microwaves and magnetic fields to form a high-density plasma.

[0026] For example, the ion source 10 may also include a plasma confinement system and an ion extraction system. The plasma confinement system confines the plasma within the ionization region through the combined action of an electric field (the potential difference between the anode and cathode) and a magnetic field, reducing ion diffusion losses and maintaining plasma density. The ion extraction system typically consists of 1-3 sets of metal electrodes (extraction electrodes, such as absorbers and accelerators). By applying a negative high voltage, positive ions are "pulled" out of the plasma, shaped into parallel or converging ion beams through a slit, and then delivered to subsequent devices.

[0027] The aluminum source generator 100 includes a heating chamber 110, a solid aluminum source 111, and a flow control device 120. The solid aluminum source 111 is located in the heating chamber 110. For example, the solid aluminum source 111 can be aluminum trichloride, which can be heated and decomposed in the heating chamber 110 to generate aluminum-containing gas, i.e., to generate a gaseous aluminum source, which can be ionized in the ionization chamber 11 to generate aluminum ions. The heating chamber 110 is used to heat the solid aluminum source 111 to generate the gaseous aluminum source. The first end of the flow control device 120 is connected to the heating chamber 110 through a first pipe 130, and the second end of the flow control device 120 is connected to the ionization chamber 11 through a second pipe 140. The flow control device 120 is used to control the flow rate of the gaseous aluminum source from the heating chamber 110 to the ionization chamber 11, so that the gaseous aluminum source can be uniformly supplied to the ionization chamber 11. For example, the flow control device 120 can be a mass flow controller (MFC). A mass flow controller is a device used to accurately measure and control the mass flow rate of gases or liquids. It not only functions as a mass flow meter, but more importantly, it can automatically control the flow rate of gases or liquids, maintaining the flow rate at a set value even when system pressure fluctuates or ambient temperature changes. According to the ion implantation apparatus of this embodiment, a separate aluminum source generator 100 is installed outside the ion source 10 to heat a solid aluminum source 111 to generate a gaseous aluminum source. A flow control device 120 controls the flow rate of the gaseous aluminum source from the self-heating chamber 110 to the ionization chamber 11. This provides the ionization chamber 11 with a uniform flow rate of gaseous aluminum source, allowing for sufficient ionization and thus improving the stability of the ion beam and the ion implantation effect. Furthermore, since the aluminum source generator 100 is not located within the ion source 10, its heating does not affect the ion source 10. This significantly extends the service life of the ion source 10, reducing the need for frequent maintenance and extending its maintenance cycle.

[0028] See appendix Figure 2 In this embodiment, the heating chamber 110 includes a receiving cavity, a heater 112, a temperature sensor 113, and a temperature control device 114.

[0029] The receiving cavity is a closed chamber that houses the solid aluminum source 111, which is located within the receiving cavity. The first end of the flow control device 120 is connected to the receiving cavity through the first pipeline 130.

[0030] The heater 112 is located in the receiving cavity and is used to heat the solid aluminum source 111. Exemplarily, the heater 112 may include a heating rod, a heating coil, etc.

[0031] Temperature sensor 113 is located in the receiving cavity and is used to detect the temperature inside the receiving cavity. For example, temperature sensor 113 may include thermocouple, thermistor, semiconductor temperature sensor, infrared temperature sensor, etc.

[0032] Temperature controller 114 is connected to heater 112 and temperature sensor 113, and is used to adjust the heating power of heater 112 according to the detection result of temperature sensor 113, so that the temperature inside the cavity is within a preset temperature range. For example, temperature controller 114 may include a microcontroller, programmable logic controller, or other control device. Temperature controller 114 is disposed outside the cavity.

[0033] The heating chamber 110 of this application embodiment can adjust the temperature inside the chamber in real time through the temperature control device 114 and the setting of the temperature control device 114, so that it is stable within a specific temperature range, so that the solid aluminum source 111 can stably decompose to generate gaseous aluminum source, avoiding large fluctuations in the generation of gaseous aluminum source, that is, the heating chamber 110 can output a stable flow of gaseous aluminum source.

[0034] For example, in some embodiments, the heating chamber 110 may also include a vacuum pump connected to the containment chamber for evacuating the containment chamber to create a slightly negative pressure inside, so that the solid aluminum source 111 can be better converted into a gaseous aluminum source therein.

[0035] See appendix Figure 1 In this embodiment, the ion implantation device further includes a first heating band 210 and a second heating band 220. The first heating band 210 covers the first conduit 130, and the second heating band 220 covers the second conduit 140. The first heating band 210 is used to heat the first conduit 130, that is, to heat the gaseous aluminum source flowing in the first conduit 130, keeping it at a suitable temperature to prevent it from solidifying due to temperature drop. The second heating band 220 is used to heat the second conduit 140, that is, to heat the gaseous aluminum source flowing in the second conduit 140, keeping it at a suitable temperature to prevent it from solidifying due to temperature drop. Exemplarily, the first heating band 210 and the second heating band 220 can be composed of electrothermal materials and insulating materials, etc. The electrothermal material can be, for example, a nickel-chromium alloy strip, which has the characteristics of rapid heating, high thermal efficiency, and long service life. The insulating material can be multilayer alkali-free glass fiber, which has good temperature resistance and reliable insulation performance. The heating belt has a flexible structure and can be directly wrapped around the surface of the pipeline for heating. It provides uniform temperature, is easy to install, convenient to use, and safe and reliable.

[0036] In other embodiments, the ion implantation apparatus further includes a heating band and an insulation layer. The heating band covers the first conduit 130, and the insulation layer covers the second conduit 140. The heating band is used to heat the first conduit 130, that is, to heat the gaseous aluminum source flowing in the first conduit 130, maintaining it at a relatively high temperature. The insulation layer covers the second conduit 140 to insulate the gaseous aluminum source flowing in the second conduit 140, ensuring it remains at a suitable temperature upon reaching the ionization chamber 11, preventing the gaseous aluminum source from solidifying due to temperature drop. Exemplarily, the heating band may be composed of electrothermal materials and insulating materials. The insulation layer may be made of inorganic insulation materials (e.g., rock wool, aluminum silicate wool, etc.), organic insulation materials (e.g., polyurethane, etc.), composite insulation materials, etc.

[0037] In some other embodiments, the ion implantation device also includes the heating band and insulation layer described above, with the heating band covering the second conduit 140 and the insulation layer covering the first conduit 130, which will not be described in detail here.

[0038] In some other embodiments, the ion implantation apparatus further includes a first heat exchange sleeve and a second heat exchange sleeve. The first heat exchange sleeve is fitted outside the first pipe 130, forming a first heat exchange medium flow path between the first heat exchange sleeve and the first pipe 130. The first heat exchange medium flow path can be used to supply high-temperature heat exchange medium, which can exchange heat with the gaseous aluminum source flowing in the first pipe 130 through the first pipe 130, keeping it at a suitable temperature and preventing the gaseous aluminum source from solidifying due to temperature drop. The high-temperature heat exchange medium can be high-temperature steam, high-temperature waste gas, etc. When the heat exchange medium is high-temperature waste gas, residual heat can be recovered, achieving energy saving and consumption reduction. The second heat exchange sleeve is fitted outside the second pipe 140, forming a second heat exchange medium flow path between the second heat exchange sleeve and the second pipe 140. The second heat exchange medium flow path can be used to supply high-temperature heat exchange medium. The high-temperature heat exchange medium passing through can exchange heat with the gaseous aluminum source flowing in the second pipe 140, keeping it at a suitable temperature and preventing the gaseous aluminum source from solidifying due to temperature drop. The high-temperature heat exchange medium can be high-temperature steam, high-temperature waste gas, etc. When the heat exchange medium is high-temperature waste gas, residual heat can be recovered, achieving energy saving and consumption reduction.

[0039] In some other embodiments, the ion implantation apparatus further includes a heat exchange sleeve and an insulation layer. The heat exchange sleeve is fitted over the outside of the first pipe 130, forming a heat exchange medium flow path between the heat exchange sleeve and the first pipe 130. The heat exchange medium flow path can be used to allow high-temperature heat exchange medium to pass through. The high-temperature heat exchange medium can exchange heat with the gaseous aluminum source flowing in the first pipe 130 through the first pipe 130, keeping it at a high temperature and preventing the gaseous aluminum source from solidifying due to temperature drop. The high-temperature heat exchange medium can be high-temperature steam, high-temperature waste gas, etc. When the heat exchange medium is high-temperature waste gas, residual heat can be recovered, achieving energy saving and consumption reduction. The insulation layer covers the second pipe 140 and is used to insulate the gaseous aluminum source flowing in the second pipe 140, ensuring that it remains at a suitable temperature when it reaches the ionization chamber 11, preventing the gaseous aluminum source from solidifying due to temperature drop. For example, the insulation layer can be made of inorganic insulation materials (such as rock wool, aluminum silicate wool, etc.), organic insulation materials (such as polyurethane, etc.), composite insulation materials, etc.

[0040] In some other embodiments, the ion implantation apparatus further includes the heat exchange sleeve and insulation layer described above. The heat exchange sleeve is fitted over the outside of the second pipeline 140, and the insulation layer covers the first pipeline 130; these details will not be elaborated further here.

[0041] See appendix Figure 1 In this embodiment, the ion implantation equipment also includes a gas box 20, in which the aluminum source generator 100 is disposed. The gas box 20 is mainly responsible for accurately supplying process gases to the ion source 10 and integrates functions such as gas storage, flow control, and safety protection. For example, the gas box 20 is also provided with a phosphine (PF3) gas source 310, a nitrogen (N2) gas source 330, a boron trifluoride (BF3) gas source 350, a mass flow controller 320, a mass flow controller 340, and a mass flow controller 360. The phosphine gas source 310 is connected to the ion source 10 through the mass flow controller 320, the nitrogen gas source 330 is connected to the ion source 10 through the mass flow controller 340, and the boron trifluoride gas source 350 is connected to the ion source 10 through the mass flow controller 360. Placing the aluminum source generator 100 in the gas holder 20 can effectively utilize the space of the gas holder 20, avoiding the need to separately install the aluminum source generator 100 in other locations, which would result in additional space occupation.

[0042] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0043] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0044] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various aspects of the invention, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the inventive point lies in solving the corresponding technical problem with fewer features than all of those in a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0045] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or apparatus so disclosed can be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature serving the same, equivalent, or similar purpose.

[0046] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0047] It should be noted that the above embodiments are illustrative of this application and not restrictive of this application, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims.

Claims

1. An ion implantation device, characterized in that, include: An ion source, the ion source including an ionization chamber; An aluminum source generator includes a heating chamber, a solid aluminum source, and a flow control device. The solid aluminum source is located in the heating chamber, which heats the solid aluminum source to generate a gaseous aluminum source. A first end of the flow control device is connected to the heating chamber via a first pipeline, and a second end of the flow control device is connected to an ionization chamber via a second pipeline. The flow control device controls the flow rate of the gaseous aluminum source from the heating chamber to the ionization chamber.

2. The ion implantation apparatus according to claim 1, characterized in that, The heating chamber includes a receiving cavity, a heater, a temperature sensor, and a temperature control device; The solid aluminum source is located in the receiving cavity; The heater is located in the receiving cavity and is used to heat the solid aluminum source; The temperature sensor is located in the receiving cavity and is used to detect the temperature inside the receiving cavity; The temperature control device is connected to the heater and the temperature sensor, and is used to adjust the heating power of the heater according to the detection result of the temperature sensor, so that the temperature inside the cavity is within a preset temperature range.

3. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation device further includes a first heating band and a second heating band, the first heating band covering the first conduit and the second heating band covering the second conduit.

4. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation equipment further includes a heating belt and an insulation layer, the heating belt covering the first conduit and the insulation layer covering the second conduit; or, The ion implantation device further includes a heating band and an insulation layer, the heating band covering the second pipeline and the insulation layer covering the first pipeline.

5. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation device further includes a first heat exchange sleeve and a second heat exchange sleeve. The first heat exchange sleeve is sleeved outside the first pipeline, and a first heat exchange medium flow path is formed between the first heat exchange sleeve and the first pipeline. The second heat exchange sleeve is sleeved outside the second pipeline, and a second heat exchange medium flow path is formed between the second heat exchange sleeve and the second pipeline.

6. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation equipment further includes a heat exchange sleeve and an insulation layer. The heat exchange sleeve is fitted outside the first pipeline, forming a heat exchange medium flow path between the heat exchange sleeve and the first pipeline. The insulation layer covers the second pipeline; or... The ion implantation equipment also includes a heat exchange sleeve and an insulation layer. The heat exchange sleeve is fitted outside the second pipeline, and a heat exchange medium flow path is formed between the heat exchange sleeve and the second pipeline. The insulation layer covers the first pipeline.

7. The ion implantation apparatus according to claim 1, characterized in that, The flow control device is a mass flow controller.

8. The ion implantation apparatus according to claim 1, characterized in that, The solid aluminum source is aluminum trichloride.

9. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation equipment also includes a gas holder, and the aluminum source generator is disposed in the gas holder.

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