Impedance matching network, radio frequency providing apparatus, and electronic device
Patent Information
- Application Number
- CN202522373069.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-07
- Publication Date
- 2026-10-27
- Estimated Expiration
- 2035-11-07
AI Technical Summary
然而,现有的阻抗匹配网络仅在谐振频率点及其附近较窄带宽内有效,在工作频带较宽的应用场景中,负载的阻抗特性变化范围更大,现有的阻抗匹配网络很难在整个宽带内有保证较好的匹配效果
[0014]本申请的有益效果:通过设置具有数量级差异的并联电容拓扑,形成分级调节机制,显著扩展容值调节范围,同时电感拓扑的可调设计进一步增强了阻抗匹配的动态适应性,解决了传统方案在宽频带边缘区域匹配效率下降的问题,能够实现高效的阻抗匹配,尤其适用于等离子体激发、射频通信等宽频带应用场景,多级电容拓扑的数量级差异设计有效覆盖了负载阻抗的大范围变化,配合电感动态调节,显著提升了宽带工作时的能量传输效率,同时降低反射功率对射频源的损害风险。
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Figure CN224909451U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment technology, and in particular to an impedance matching network, a radio frequency supply device, and an electronic device. Background Technology
[0002] To effectively apply the power from the radio frequency (RF) power source that excites the plasma to the discharge system, an impedance matching network needs to be connected between the RF power source and the discharge system. This network typically includes capacitors and inductors. When the impedance of the impedance matching network needs to be changed, the size of the capacitor is usually adjusted. However, existing impedance matching networks are only effective within a narrow bandwidth at and around the resonant frequency. In applications with wider operating bandwidths, the impedance characteristics of the load vary over a greater range, making it difficult for existing networks to guarantee good matching performance across the entire bandwidth. Utility Model Content
[0003] The purpose of this application is to provide an impedance matching network, an RF supply device, and an electronic device that can improve the impedance matching performance and impedance matching accuracy of the impedance matching network.
[0004] This application provides an impedance matching network, including: The first capacitor topology includes at least two capacitors connected in parallel, with adjustable capacitance values; The second capacitor topology includes at least two capacitors connected in parallel with the first capacitor topology, and the capacitance values are adjustable; the capacitance values of the capacitors in the first capacitor topology and the second capacitor topology are related by orders of magnitude. An inductor topology connects the first capacitor topology and the second capacitor topology, and the inductance value is adjustable; A controller is configured to configure the capacitance values of both the first capacitor topology and the second capacitor topology, and to configure the inductance value of the inductor topology.
[0005] In some embodiments, the capacitance values of the inductors in the first capacitor topology are in a multiple or exponential relationship; and / or the capacitance values of the inductors in the second capacitor topology are in a multiple or exponential relationship.
[0006] In some embodiments, the controller is configured to configure the capacitance value of the first capacitor topology or the capacitance value of the second capacitor topology based on the mapping relationship between capacitance value and frequency point.
[0007] In some embodiments, the controller is configured to configure the inductance value of the inductor topology based on the mapping relationship between inductance value and frequency point.
[0008] In some embodiments, the capacitor is connected in series with a switching device; and / or the inductor topology includes at least two inductors connected in parallel, the inductors being connected in series with a switching device.
[0009] In some embodiments, the switching device is a relay or a pin diode.
[0010] In some embodiments, the capacitor is an adjustable capacitor; and / or the inductor topology includes at least one inductor, which is an adjustable inductor.
[0011] In some embodiments, the first capacitor topology, the second capacitor topology, and the inductor topology together constitute an L-shaped network topology, a Π-shaped network topology, a T-shaped network topology, or a composite network topology.
[0012] This application also provides a radio frequency (RF) providing device, including an RF signal generation module and the impedance matching network described above.
[0013] This application also provides an electronic device, including the radio frequency providing device described above.
[0014] The beneficial effects of this application are as follows: By setting up parallel capacitor topologies with orders of magnitude differences, a hierarchical adjustment mechanism is formed, which significantly expands the capacitance adjustment range. At the same time, the adjustable design of the inductor topology further enhances the dynamic adaptability of impedance matching, solves the problem of decreased matching efficiency in the broadband edge region of traditional solutions, and enables efficient impedance matching. It is especially suitable for broadband application scenarios such as plasma excitation and radio frequency communication. The order-of-magnitude difference design of the multi-level capacitor topology effectively covers a wide range of load impedance changes. Combined with dynamic inductor adjustment, it significantly improves the energy transmission efficiency during broadband operation, while reducing the risk of damage to the radio frequency source by reflected power. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the impedance matching network provided in the first embodiment of this application.
[0016] Figure 2 This is a schematic diagram of the impedance matching network provided in the second embodiment of this application.
[0017] Figure 3 This is a schematic diagram of the impedance matching network provided in the third embodiment of this application.
[0018] Figure 4 This is a schematic diagram of the impedance matching network provided in the fourth embodiment of this application.
[0019] Figure 5 This is a schematic diagram of the structure of a radio frequency providing device provided in an embodiment of this application.
[0020] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation
[0021] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0022] It should be noted that the terms "first," "second," "third," "fourth," etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a system, product, or device that includes a series of circuits is not necessarily limited to those explicitly listed, but may include other circuits not explicitly listed or inherent to such systems, products, or devices.
[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.
[0024] This application provides an impedance matching network.
[0025] See Figure 1 In one embodiment, the impedance matching network includes a first capacitor topology 1, a second capacitor topology 2, an inductor topology 3, and a controller 4.
[0026] The first capacitor topology 1 includes at least two capacitors connected in parallel, and the capacitance value of the first capacitor topology 1 is adjustable. It can be understood that the first capacitor topology 1 refers to a capacitance adjustment unit composed of multiple parallel capacitors. Specifically, relays or electronic switches can be used to switch between combinations of capacitors with different capacitance values to achieve discrete capacitance adjustment.
[0027] The second capacitor topology 2 includes at least two capacitors connected in parallel. The second capacitor topology 2 is connected in parallel with the first capacitor topology 1, and the capacitance value of the second capacitor topology 2 is adjustable. The capacitance values of the capacitors in the first capacitor topology 1 and the second capacitor topology 2 are on the same order of magnitude. It can be understood that the second capacitor topology 2 refers to another set of capacitance adjustment units connected in parallel with the first capacitor topology 1, whose capacitor capacitance range differs from that of the capacitors in the first capacitor topology 1 by at least one order of magnitude. For example, if the capacitance value range of the capacitors in the first capacitor topology 1 is 10-100 pF, the capacitance value range of the capacitors in the second capacitor topology 2 is 1-10 nF, thereby expanding the overall adjustment range.
[0028] Inductor topology 3 connects the first capacitor topology 1 and the second capacitor topology 2. The inductance value of inductor topology 3 is adjustable. In other words, inductor topology 3 refers to an adjustable inductor structure connecting two capacitor topologies. Specifically, it can use a coil with a magnetic core or a switch to switch windings with different inductance values, achieving continuous or step-by-step adjustment of the inductance value.
[0029] Controller 4 is used to configure the capacitance values of both the first capacitor topology 1 and the second capacitor topology 2, and to configure the inductance value of the inductor topology 3. It can be understood that controller 4 refers to a control unit used to configure the capacitance values of both the first capacitor topology 1 and the second capacitor topology 2, and to configure the inductance value of the inductor topology 3. For example, by detecting reflected power or impedance parameters, it dynamically adjusts the capacitance values of the first capacitor topology 1 and / or the second capacitor topology 2 and / or the inductance value of the inductor topology 3 to achieve a matching state.
[0030] The impedance matching network provided in this application embodiment has good impedance matching performance and accuracy. When the load impedance deviates from the matching point due to changes in the operating frequency, the controller 4 first coarsely adjusts the capacitance value of the first capacitor topology 1 according to the mapping relationship between frequency and capacitance and inductance. If the capacitance value adjustment range is insufficient, the capacitance value adjustment of the second capacitor topology 2 is initiated, utilizing their order-of-magnitude difference to quickly cover a larger impedance change range. At the same time, the inductance value of the inductor topology 3 is adjusted synchronously to offset the inductive reactance shift caused by frequency changes. Through the synergistic effect of the two capacitor topologies, combined with dynamic inductor compensation, impedance matching can be maintained over a wide frequency band. Therefore, by setting up parallel capacitor topologies with orders of magnitude differences, a hierarchical adjustment mechanism is formed, significantly expanding the capacitance adjustment range. At the same time, the adjustable design of inductor topology 3 further enhances the dynamic adaptability of impedance matching, solving the problem of decreased matching efficiency in the broadband edge region of traditional solutions. It can achieve efficient impedance matching, which is especially suitable for broadband application scenarios such as plasma excitation and radio frequency communication. The order-of-magnitude difference design of the multi-level capacitor topology effectively covers a wide range of load impedance changes. Combined with dynamic inductor adjustment, it significantly improves the energy transmission efficiency during broadband operation, while reducing the risk of damage to the radio frequency source by reflected power.
[0031] In some embodiments, the capacitance values of the inductors in the first capacitor topology 1 are in a multiple or exponential relationship, and / or the capacitance values of the inductors in the second capacitor topology 2 are in a multiple or exponential relationship. It can be understood that a multiple relationship means that the capacitance values of the capacitors within the same capacitor topology increase or decrease by a fixed integer multiple, which can be achieved by selecting capacitors with different capacitance values connected in parallel, for example, including capacitors with capacitance values of 1pF, 2pF, and 4pF. An exponential relationship means that the capacitance values of the capacitors within the same capacitor topology are distributed according to an exponential function, for example, including capacitors with capacitance values of 1pF, 10pF, and 100pF. These two relationships cover different levels of adjustment needs through a discretized capacitance value distribution, achieving finer capacitance adjustment over a wide frequency band.
[0032] Specifically, after arranging the capacitor values of the first capacitor topology 1 and the second capacitor topology 2 in a multiple or exponential relationship, the controller 4 selects different combinations of capacitor values by controlling the switching device, so that the total capacitance value can cover a wider range in a stepped manner. For example, when the first capacitor topology 1 contains capacitors of 1pF, 2pF, and 4pF, the total capacitance value can be combined in 1pF increments from 1pF to 7pF by switching the switch; if the second capacitor topology 2 contains capacitors of 10pF, 20pF, and 40pF, the total capacitance value can cover the range of 10pF to 70pF. This discrete distribution method allows the capacitance values required at different frequencies within a wide bandwidth to be precisely matched. Thus, by designing capacitor values in multiple or exponential relationships, the adjustable range of the total capacitance is significantly expanded with the same number of capacitors, while the adjustment accuracy is improved by combining different orders of magnitude, thereby adapting to drastic changes in load impedance within a wide bandwidth.
[0033] In some embodiments, the controller 4 is configured to configure the capacitance value of the first capacitor topology 1 or the capacitance value of the second capacitor topology 2 based on the mapping relationship between capacitance values and frequency points. It can be understood that the mapping relationship between capacitance values and frequency points refers to a pre-established correspondence rule between capacitance parameters and the target operating frequency, which can be implemented using a lookup table or function model, for example, by determining the optimal combination of capacitance values corresponding to different frequency points through experimental testing or theoretical calculation. Configuring capacitance values can be achieved by adjusting the capacitor connection state or capacitance parameters through control signals, specifically by switching a fixed capacitor array using switching devices or by controlling the capacitance change of a variable capacitor through voltage.
[0034] Specifically, when the operating frequency changes, the controller 4 queries the mapping relationship based on the current target frequency to obtain the corresponding capacitance configuration parameters for either the first capacitor topology 1 or the second capacitor topology 2. For example, when the RF signal frequency switches to 2.4GHz, the controller 4 extracts the capacitance value combination corresponding to that frequency from the stored mapping table and drives the switching device to connect a specific capacitor in the first capacitor topology 1 to the circuit, so that the overall capacitance value meets the matching requirements. This control method based on pre-stored mapping relationships can quickly respond to frequency changes and avoid the delay caused by real-time calculations. Thus, by establishing a mapping relationship between frequency points and capacitance values, the controller 4 can directly call the pre-stored optimal parameters, significantly shortening the adjustment time and improving the matching accuracy. This achieves rapid automatic adjustment of impedance matching over a wide bandwidth. The control method based on pre-stored mapping relationships effectively solves the problem of response lag in traditional solutions when switching frequencies, ensuring that the best matching state is maintained at different operating frequencies, and is especially suitable for multi-band switching applications in RF communication equipment.
[0035] In some embodiments, the controller 4 is configured to configure the inductance value of the inductor topology 3 based on the mapping relationship between inductance value and frequency. It can be understood that the mapping relationship between inductance value and frequency refers to a pre-established data table or calculation formula corresponding to the target operating frequency and inductance value. Specifically, it can be generated by experimental measurement, simulation modeling or theoretical derivation, and is used to guide the controller 4 to select the matching inductance value at different operating frequencies.
[0036] Specifically, controller 4 determines the target inductance value based on the current RF signal frequency by querying the mapping relationship. Then, it adjusts the core position of the adjustable inductor in inductor topology 3, or switches branches with different inductance values in the parallel inductor array, to adapt the inductance value of inductor topology 3 to the current frequency. For example, when the operating frequency increases, controller 4 lowers the inductance value to maintain resonance; when the frequency decreases, it increases the inductance value. This process can work in conjunction with the adjustment of the capacitor topology to jointly expand the effective bandwidth of the impedance matching network. Thus, by establishing a mapping relationship between inductance value and frequency, dynamic adaptation of the inductance value is achieved, enabling the impedance matching network to maintain low reflection and high transmission efficiency over a wider frequency band. It can quickly adjust the inductance value according to changes in operating frequency, solving the narrowband matching problem caused by fixed inductance values in existing technologies. This is particularly suitable for wideband applications such as RF power amplifiers and plasma excitation devices, effectively reducing signal reflection loss and improving energy transmission efficiency.
[0037] In some embodiments, a capacitor is connected in series with a switching device, and / or inductor topology 3 includes at least two inductors connected in parallel, with the inductors connected in series with a switching device. It is understood that after the capacitor is connected in series with a switching device, the switching device controls whether the capacitor is connected to the first capacitor topology 1 or the second capacitor topology 2. When the switch is closed, the capacitor participates in the circuit operation; when the switch is open, the capacitor is bypassed. Similarly, after the inductor is connected in series with a switching device, the switching device controls whether the inductor is connected to inductor topology 3. When the switch is closed, the inductor participates in the circuit operation; when the switch is open, the inductor is bypassed.
[0038] Specifically, when capacitors are connected in series with switching devices, controller 4 selectively connects capacitors of different capacitance values to the parallel network by controlling the on / off state of the switches, forming discrete capacitance adjustment steps. For inductor topology 3, multiple parallel inductors are connected in series with switching devices, and controller 4 switches parallel branches with different inductance values through switch combinations to achieve graded adjustment of inductance values. For example, during the operation of the matching network, when a change in load impedance is detected, controller 4 synchronously adjusts the on / off state of the switching devices in the capacitor topology and the switching state of the switching devices in inductor topology 3 according to the preset switch combination logic, so that the overall network impedance dynamically matches the load. Thus, by switching combinations of multiple fixed-value capacitors or inductors with switching devices, discrete adjustment can be achieved over a wider range, quickly matching impedance requirements at different frequency points in wide-band scenarios, while avoiding the lifespan limitations of traditional adjustable components due to mechanical structures, improving the reliability and response speed of the matching network.
[0039] In one specific embodiment, the switching device is a relay or a pin diode.
[0040] Specifically, in impedance matching networks, when the capacitance or inductance value needs to be adjusted, a relay can connect or disconnect the capacitor or inductor branch by closing or opening its mechanical contacts, thereby changing the equivalent parameters of the overall network. A pin diode, on the other hand, switches between on and off states by applying a control voltage, thus controlling the on / off state of the capacitor or inductor branch. For example, in applications requiring rapid switching, pin diodes, due to their lack of mechanical action, can significantly improve switching speed; while in applications requiring high power handling, relays are more suitable as switching devices due to their voltage and current withstand capabilities.
[0041] In some embodiments, the capacitor is an adjustable capacitor, and / or the inductor topology 3 includes at least one inductor, which is an adjustable inductor. It is understood that an adjustable capacitor refers to a capacitive element whose capacitance value can be continuously or in stages, specifically implemented using a voltage-controlled varactor diode, a microelectromechanical system capacitor array, or a digitally controlled capacitor matrix, with the capacitance value adjusted by changing the plate spacing or effective area. An adjustable inductor refers to an inductive element whose inductance value can be continuously or in stages, specifically implemented using a core displacement structure, a multi-tap coil, or a variable permeability material, with the inductance value adjusted by changing the magnetic circuit parameters or the number of coil turns.
[0042] Specifically, the adjustable capacitor placed between the RF power supply and the load can adjust the capacitive reactance parameter in real time, while the adjustable inductor in inductor topology 3 can adjust the inductive reactance parameter synchronously. When the operating frequency varies within a wide bandwidth, the controller 4 drives the adjustable capacitor and adjustable inductor to perform coordinated parameter adjustments by detecting reflected power or phase difference signals. For example, in a plasma discharge system, when the cavity impedance changes with gas pressure, the adjustable capacitor changes the equivalent capacitance value linearly by changing the plate spacing, while the adjustable inductor changes the inductance by adjusting the magnetic core position. The two work together to achieve dynamic impedance matching. Thus, stepless adjustment is achieved through adjustable components, avoiding contact losses and arcing risks caused by switching devices. Compared to a matching network using only an adjustable capacitor, the introduction of an adjustable inductor forms a two-degree-of-freedom adjustment system with a larger adjustment range on the complex impedance plane.
[0043] See also Figures 1 to 4 In some embodiments, the first capacitor topology 1, the second capacitor topology 2, and the inductor topology 3 together constitute an L-shaped network topology, a Π-shaped network topology, a T-shaped network topology, or a composite network topology. An L-shaped network topology refers to an L-shaped structure composed of two reactive elements, specifically implemented by connecting a capacitor and an inductor in series or in parallel, used for single-frequency or narrowband impedance matching. A Π-shaped network topology refers to a Π-shaped structure composed of three reactive elements, specifically implemented by connecting two parallel capacitors with an inductor connected in series, suitable for high-frequency wideband matching scenarios. A T-shaped network topology refers to a T-shaped structure composed of three reactive elements, specifically implemented by connecting two series inductors with a capacitor connected in parallel, suitable for low-frequency wideband matching scenarios. A composite network topology refers to a structure formed by combining multiple L-shaped, Π-shaped, and / or T-shaped network topologies, specifically implemented by multi-level cascading or hybrid connections, used to expand matching bandwidth or improve tuning accuracy.
[0044] Specifically, when the first capacitor topology 1 and the second capacitor topology 2 use capacitance values of different orders of magnitude, combined with the adjustable characteristics of the inductor topology 3, any combination of L-type, Π-type, T-type, or composite network topologies can be selected. For example, in applications requiring rapid tuning, the simple L-type network topology can be preferred; in scenarios requiring wideband matching, a structure combining Π-type and T-type network topologies can be used. Through the coordinated adjustment of capacitance and inductance values by the controller 4, the network topology can be automatically switched according to changes in operating frequency, ensuring that the impedance matching network maintains optimal matching in different frequency bands. Thus, through reconfigurable topology combinations, the same set of capacitors and inductors can dynamically form multiple network structures, significantly expanding the effective operating bandwidth while maintaining device reuse rate. In particular, the introduction of composite network topologies can eliminate the frequency response dead zone of a single topology through multi-level tuning.
[0045] This application also provides a radio frequency providing device.
[0046] See Figure 5 In one embodiment, the radio frequency providing device includes a radio frequency signal generation module and the impedance matching network provided in the above embodiments. For example... Figure 5 As shown, the RF signal output by the RF signal generation module is transmitted to the load end through an impedance matching network. The controller 4 dynamically adjusts the capacitance values of both the first capacitor topology 1 and the second capacitor topology 2 according to the operating frequency, while simultaneously adjusting the inductance value of the inductor topology 3. This ensures that the capacitance difference between the first capacitor topology 1 and the second capacitor topology 2 remains within the order of magnitude, thereby achieving impedance matching over a wide bandwidth. For example, when the operating frequency increases, the controller 4 can decrease the capacitance value of the first capacitor topology 1 and increase the capacitance value of the second capacitor topology 2, while simultaneously decreasing the inductance value, to maintain the resonant characteristics of the impedance matching network. The impedance matching network can be... Figures 1 to 4 For any of the impedance matching networks shown, the circuit structure and implementation method of the impedance matching network can be found in the above. Figures 1 to 4 The circuit structure and implementation method provided will not be elaborated here.
[0047] In some specific implementations, the RF signal generation module can integrate a high-frequency signal generator and a power amplifier circuit; the capacitors in the impedance matching network can be a relay-switched capacitor array; and the inductor topology 3 can include multiple adjustable inductor coils connected in parallel. The controller 4 adjusts the combination of capacitor and inductor parameters in real time using preset capacitor-frequency mapping tables and inductor-frequency mapping tables.
[0048] This application also provides an electronic device.
[0049] See Figure 6In one embodiment, the electronic device may include a radio frequency (RF) providing device, a processor, a memory, an input / output device, a communication module, and other necessary electronic components (not shown in the figures) and interfaces. Furthermore, the electronic device may also include at least one communication bus, which can be used to enable communication between these components. The RF providing device described in this embodiment may be one of the aforementioned... Figure 5 The radio frequency providing device provided in the illustrated embodiment. Input / output devices may include a display, keyboard, touchscreen, etc. Communication modules may optionally include Wi-Fi, Bluetooth, NFC, etc. Interfaces may optionally include standard wired interfaces and wireless interfaces. Memory includes random access memory and non-volatile memory, such as erasable programmable read-only memory. Memory may also optionally be at least one storage device located remotely from the aforementioned processor. Figure 6 As shown, a memory, which is a computer-readable storage medium, may include an operating system, a network communication module, a user interface module, and a device control application program. In this embodiment, the memory is used to store program code. Figure 6 As shown, the radio frequency providing device, as a core component, incorporates a signal generation unit (not shown in the figure) and, according to the above... Figures 1 to 4 The impedance matching network provided in any of the embodiments shown (not shown in the figure) adjusts the combination of parallel capacitor values of the first capacitor topology and the second capacitor topology, and simultaneously adjusts the inductance value of the inductor topology, after the RF signal generation module generates the RF signal. Since the capacitor values of the first capacitor topology and the second capacitor topology differ by orders of magnitude—for example, the adjustment range of the first topology is 1-10 pF and the adjustment range of the second topology is 10-100 pF—the combination of the two can cover a continuous adjustment range of 1-100 pF. The inductor topology achieves impedance matching at different frequency points by switching parallel inductor units or adjusting adjustable inductors. When the electronic device operates in a wide bandwidth, the controller dynamically adjusts the capacitor and inductance values based on preset capacitor-frequency mapping relationships and inductor-frequency mapping relationships, ensuring that the RF signal maintains impedance matching over a wide bandwidth. Electronic devices can be one of the following: communication devices (such as smartphones, tablets, wireless routers, etc.), wireless broadcasting and television equipment, plasma generators (etching / deposition equipment), industrial radio frequency heating systems, high-power magnetron drive sources, medical devices (such as radio frequency ablation devices, nuclear magnetic resonance imaging equipment, etc.), and industrial and scientific research equipment (such as radio frequency identification, material heating, plasma generation, etc.).
[0050] In summary, the impedance matching network, RF supply device, and electronic device provided in this application, by setting up parallel capacitor topologies with orders of magnitude differences, form a hierarchical adjustment mechanism, significantly expanding the capacitance adjustment range. At the same time, the adjustable design of the inductor topology further enhances the dynamic adaptability of impedance matching, solving the problem of decreased matching efficiency in broadband edge regions of traditional solutions. It can achieve efficient impedance matching, and is especially suitable for broadband application scenarios such as plasma excitation and RF communication. The order-of-magnitude difference design of the multi-level capacitor topology effectively covers a wide range of load impedance changes. Combined with dynamic inductor adjustment, it significantly improves the energy transmission efficiency during broadband operation, while reducing the risk of damage to the RF source by reflected power.
[0051] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.
[0052] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.
Claims
1. An impedance matching network, characterized in that, include: The first capacitor topology includes at least two capacitors connected in parallel, with adjustable capacitance values; The second capacitor topology includes at least two capacitors connected in parallel with the first capacitor topology, and the capacitance values are adjustable; the capacitance values of the capacitors in the first capacitor topology and the second capacitor topology are related by orders of magnitude. An inductor topology connects the first capacitor topology and the second capacitor topology, and the inductance value is adjustable; A controller is configured to configure the capacitance values of both the first capacitor topology and the second capacitor topology, and to configure the inductance value of the inductor topology.
2. The impedance matching network according to claim 1, characterized in that, The capacitance values of the inductors in the first capacitor topology are in a multiple or exponential relationship; and / or the capacitance values of the inductors in the second capacitor topology are in a multiple or exponential relationship.
3. The impedance matching network according to claim 1, characterized in that, The controller is configured to configure the capacitance value of the first capacitor topology or the capacitance value of the second capacitor topology based on the mapping relationship between capacitance value and frequency point.
4. The impedance matching network according to claim 1, characterized in that, The controller is configured to configure the inductance value of the inductor topology based on the mapping relationship between the inductance value and the frequency point.
5. The impedance matching network according to claim 1, characterized in that, The capacitor is connected in series with a switching device; and / or the inductor topology includes at least two inductors connected in parallel, the inductors being connected in series with a switching device.
6. The impedance matching network according to claim 5, characterized in that, The switching device is a relay or a pin diode.
7. The impedance matching network according to claim 1, characterized in that, The capacitor is an adjustable capacitor; and / or the inductor topology includes at least one inductor, which is an adjustable inductor.
8. The impedance matching network according to any one of claims 1 to 7, characterized in that, The first capacitor topology, the second capacitor topology, and the inductor topology together constitute an L-shaped network topology, a Π-shaped network topology, a T-shaped network topology, or a composite network topology.
9. A radio frequency providing device, characterized in that, It includes a radio frequency signal generation module and an impedance matching network as described in any one of claims 1 to 8.
10. An electronic device, characterized in that, Includes the radio frequency providing device as described in claim 9.