A high-voltage positive pulse generating circuit and device

Abstract

The application belongs to the technical field of pulse power, and particularly relates to a high-voltage positive pulse generation circuit and device. The application adopts a circuit structure in which a first energy storage module and a relay energy storage module containing a gating unit are cascaded through an avalanche triode. In a charging stage, each energy storage module is independently charged through a trigger module, so that the charging circuit can be simplified, and the charging efficiency is improved. In a discharging stage, the trigger module turns off the gating unit, avalanche breakdown of the first avalanche triode triggers breakdown of subsequent relay avalanche triodes in sequence through a specially constructed discharge circuit, and a series pulse generation path is formed. The path is completely independent of the charging circuit, and the problem that discharge energy is consumed by the charging path in the traditional scheme is avoided. Finally, the series superposition of the electric energy of each stage of the energy storage unit is positively output, and a high-voltage positive pulse is generated on the pulse output module. Compared with the prior art, the energy utilization efficiency and the pulse output performance are significantly improved.

Description

Technical Field

[0001] This application belongs to the field of pulse power technology, specifically relating to a high-voltage positive pulse generating circuit and device. Background Technology

[0002] High-voltage nanosecond pulse technology plays a central role in many key areas of modern science and technology. Traditionally, Marx circuits built with avalanche bipolar junction transistors (ABJTs) have been widely used due to their ability to generate high-voltage pulses with fast leading edges (down to the sub-nanosecond level) and narrow pulse widths (nanosecond level). However, in practical applications, the traditional topology of this type of circuit often outputs negative polarity pulses. This negative pulse output reveals its limitations in certain application scenarios, such as when the object being processed, like biological cells or specific materials, is sensitive to pulse polarity, or when using positive polarity pulses can effectively improve dielectric breakdown field strength, optimize electrode lifetime, and improve plasma behavior.

[0003] More importantly, in cutting-edge devices such as plasma jet-driven magneto-inertial fusion, the pulsed power source driving the plasma gun explicitly requires positive nanosecond pulses. However, if the pulse of a conventional avalanche transistor Marx circuit is inverted, there are problems such as long charging time and high discharge energy consumption. If the problems of stable and high-performance positive pulse generation cannot be solved, it will directly restrict the exploration and development of these advanced technologies. Therefore, developing the ability to generate positive pulses based on avalanche transistor Marx circuits is not a simple matter of pulse inversion, but a technical direction that must be overcome in the field of pulse power technology to meet the specific needs of cutting-edge applications and overcome the inherent limitations of negative pulses. It has clear and significant research value. Utility Model Content

[0004] To address the shortcomings of existing technologies, the purpose of this application is to provide a high-voltage positive pulse generator, which aims to solve the problem that the pulse inversion scheme of the traditional avalanche transistor Marx circuit is limited by the negative pulse structure, has a long charging time and high discharge energy consumption, and cannot adapt to positive pulse scenarios.

[0005] The first aspect of this application relates to a high-voltage positive pulse generating circuit, comprising: a first energy storage module, at least one relay energy storage module including a gating unit, a first avalanche transistor, the same number of relay avalanche transistors as the relay energy storage module, a trigger module, and a pulse output module; the first output terminal of the trigger module is connected to each gating unit; the output terminal of the first energy storage module is connected to the collector of the first avalanche transistor; the emitter of the first avalanche transistor is connected to the input terminal of the first-stage relay energy storage module; the base of the first avalanche transistor is connected to the second output terminal of the trigger module; the output terminal of the last-stage relay energy storage module is connected to the collector of the last-stage relay avalanche transistor; the emitter of the last-stage relay avalanche transistor is connected to the input terminal of the pulse output module; when there are at least two relay energy storage modules, any two adjacent relay energy storage modules are connected by connecting the output terminal of the preceding stage to the collector of the relay avalanche transistor, and the input terminal of the following stage is connected to the emitter of the same relay avalanche transistor; wherein, the relay avalanche transistor... The base and emitter are connected; the gating unit is used to turn on when a turn-on signal is received to enable the charging circuit of the energy storage device of the relay energy storage module, and to turn off when a turn-off signal is received to enable the discharging circuit of the energy storage device of the relay energy storage module; the triggering module is used to send a turn-off signal to the base of the first avalanche transistor to turn off the first avalanche transistor during the charging phase, and to send a turn-on signal to each gating unit, so that the first energy storage module and each relay energy storage module can be charged independently; the triggering module is also used to send a turn-on signal to the base of the first avalanche transistor to turn on the first avalanche transistor during the discharging phase, and to send a turn-off signal to each gating unit; the avalanche breakdown of the first avalanche transistor triggers multiple relay avalanche transistors to avalanche breakdown in sequence through the discharge circuit, so that each discharge circuit is connected to the pulse output module through the broken avalanche transistor to form a pulse generation path; the electrical energy stored in each energy storage unit is superimposed in series through the pulse generation path, and finally a high-voltage positive pulse is generated on the pulse output module.

[0006] In one embodiment, the first energy storage module includes: a first resistor and a first capacitor; a first end of the first resistor is connected to a power supply, and a second end of the first resistor is connected to the collector of the first avalanche transistor and the first end of the first capacitor, respectively; the second end of the first capacitor is grounded.

[0007] In one embodiment, the relay energy storage module further includes: an energy storage unit; a first end of the energy storage unit is connected to a power supply, a second end of the energy storage unit is connected to the collector of a subsequent avalanche transistor, and a third end of the energy storage unit is connected to the emitter of a preceding avalanche transistor and the first end of a gating unit; the second end of the gating unit is connected to the first output terminal of a trigger module, and the third end of the gating unit is grounded; the energy storage unit is used to charge through the power supply when the gating unit is turned on, and also to discharge through the avalanche transistor when the gating unit is turned off.

[0008] In one embodiment, the energy storage unit includes: a second resistor and a second capacitor; a first end of the first resistor is connected to a power supply, and a second end of the first resistor is connected to the collector of the subsequent avalanche transistor and the first end of the second capacitor, respectively; a second end of the first capacitor is connected to the emitter of the preceding avalanche transistor and the first end of the gating unit, respectively.

[0009] In one embodiment, the selection unit includes one of a relay, a transistor, a MOSFET, or an insulated-gate bipolar transistor; when the selection unit is an insulated-gate bipolar transistor, the gate of the insulated-gate bipolar transistor is connected to the first output terminal of the trigger module, the collector of the insulated-gate bipolar transistor is connected to the third terminal of the energy storage unit, and the emitter of the insulated-gate bipolar transistor is grounded.

[0010] In one embodiment, the triggering module includes: a first triggering unit and a second triggering unit; the output terminal of the first triggering unit is connected to each gating unit respectively; the output terminal of the second triggering unit is connected to the base of the first avalanche transistor; the first triggering unit is used to control the on / off state of the gating units; the second triggering unit is used to control the on / off state of the first avalanche transistor.

[0011] In one embodiment, the first triggering unit includes: a first driver; the positive terminal of the first driver is connected to each gating unit respectively, and the negative terminal of the first driver is grounded.

[0012] In one embodiment, the second trigger unit includes: a second driver, a trigger capacitor, and a trigger resistor; the positive terminal of the second driver is connected to the first terminal of the trigger capacitor; the second terminal of the trigger capacitor is connected to the gate of the first avalanche transistor and the first terminal of the trigger resistor respectively; the second terminal of the trigger resistor is connected to the negative terminal of the second driver and the emitter of the first avalanche transistor respectively; the negative terminal of the second driver is internally suspended.

[0013] In one embodiment, the pulse output module includes: a load resistor; a first end of the load resistor is connected to the emitter of the last stage relay avalanche transistor; and a second end of the load resistor is grounded.

[0014] The second aspect of this application relates to a high-voltage positive pulse generating device, which includes: the high-voltage positive pulse generating circuit of the first aspect.

[0015] It is understandable that the beneficial effects of the relay aspects up to the fifth aspect can be found in the relevant description in the first aspect above, and will not be repeated here.

[0016] Overall, the technical solutions conceived in this application have the following beneficial effects compared with the prior art: This application employs a circuit structure in which a first energy storage module and a relay energy storage module containing a gating unit are cascaded through avalanche transistors. During the charging phase, the trigger module controls each energy storage module to charge independently, providing a simplified charging circuit foundation and thus improving charging efficiency. During the discharging phase, the trigger module turns off the gating unit, allowing the avalanche breakdown of the first avalanche transistor to trigger the breakdown of subsequent relay avalanche transistors sequentially through a specially constructed discharge circuit, forming a series pulse generation path. This path is completely independent of the charging circuit, avoiding the problem of discharge energy being consumed by the charging path in traditional schemes. Finally, through the series superposition of electrical energy from each energy storage unit and positive output, a high-voltage positive pulse is generated on the pulse output module. Compared with existing technologies, this significantly improves energy utilization efficiency and pulse output performance. Attached Figure Description

[0017] Figure 1 This is a topology diagram of a conventional avalanche transistor Marx negative pulse generation circuit; Figure 2 This is one of the structural block diagrams of the high-voltage positive pulse generating circuit provided in the embodiments of this application; Figure 3 This is a circuit topology diagram of the first energy storage module provided in the embodiments of this application; Figure 4 This is a second structural block diagram of the high-voltage positive pulse generating circuit provided in the embodiments of this application; Figure 5 This is a circuit topology diagram of the relay energy storage module provided in the embodiments of this application; Figure 6 This is the third structural block diagram of the high-voltage positive pulse generating circuit provided in the embodiments of this application; Figure 7 This is a topology diagram of a high-voltage positive pulse generating circuit provided in an embodiment of this application.

[0018] In all the accompanying drawings, the same reference numerals are used to denote the same elements or structures, wherein: 10 is the first energy storage module; ABJT1 is the first avalanche transistor; 20 is the relay energy storage module; ABJT2 is the relay avalanche transistor; 21 is the gating unit; 22 is the energy storage unit; 30 is the trigger module; 31 is the first trigger unit; 32 is the second trigger unit; 40 is the pulse output module; R0 is the trigger resistor; R1 is the first resistor; R2 is the second resistor; RL is the load resistor; C0 is the trigger capacitor; C1 is the first capacitor; C2 is the second capacitor; Q2 is the insulated gate bipolar transistor; QD1 is the first driver; QD2 is the second driver. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0020] In this application, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A existing alone, A and B existing simultaneously, and B existing alone. In this application, the symbol " / " indicates that the related objects are in an "or" relationship, for example, A / B means A or B.

[0021] In this application, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order of objects. For example, "first response message" and "relay response message," etc., are used to distinguish different response messages, not to describe a specific order of response messages. Words such as "exemplary" or "for example" are used to indicate that something is being described as an example, illustration, or illustration. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0022] In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more, for example, multiple processing units means two or more processing units, multiple elements means two or more elements, etc.

[0023] It should be understood that expressions such as “comprising” and “may include” used in this application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In this application, terms such as “comprising” and / or “having” are to be interpreted as indicating a particular characteristic, number, operation, constituent element, component, or combination thereof, but not to exclude the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0024] Furthermore, in this application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0025] Please refer to the traditional avalanche transistor Marx circuit. Figure 1 , Figure 1This is a topology diagram of a conventional avalanche transistor Marx negative pulse generation circuit. The DC power supply first charges the first capacitor C1 and the second capacitor C2 through the first resistor R1 and the second resistor R2. Except for the last stage, each stage capacitor is charged in series with the first resistor R1 or the second resistor R2 used as current limiting and the trigger resistor Rt. The second capacitor C2 of the last stage is charged in series with the second resistor R2 and the load resistor RL.

[0026] Understandably, during the triggering phase, the driver module QD provides a positive trigger voltage to turn on ABJT1. The first capacitor C1 discharges, generating a negative pulse across the trigger resistor Rt in the circuit. This increases the voltage difference between ABJT2, causing ABJT2 to conduct due to overvoltage. This, in turn, causes the first capacitor C1 and the second capacitor C2 to discharge in series, driving ABJT3. Subsequent avalanche transistors are turned on sequentially in the same manner, causing multiple capacitors to discharge in series and generating a negative pulse across the load RL. Since the capacitor potential near the load RL is grounded, and one side of the load RL is grounded, during the capacitor series discharge phase, the potential near the capacitor side of the load RL is passively converted to a negative potential to ensure that the voltage difference across the load RL is close to the voltage difference across the series capacitors.

[0027] Therefore, it is evident that traditional avalanche transistor Marx circuits have significant technical limitations: their inherent topology results in output pulses that are always negative, while many cutting-edge applications, including biological cell processing, specific material manipulation, and plasma driving, rely on positively polarized pulses to achieve higher dielectric breakdown field strength, optimize electrode lifetime, or control plasma behavior. Particularly noteworthy is that reversing the pulse polarity through external circuitry introduces new problems such as low charging efficiency and severe energy loss.

[0028] Based on this, this application proposes an embodiment of a high-voltage positive pulse generating circuit. Please refer to... Figure 2 , Figure 2 This is one of the structural block diagrams of the high-voltage positive pulse generating circuit provided in the embodiments of this application.

[0029] In this embodiment, the high-voltage positive pulse generating circuit includes: a first energy storage module 10, at least one relay energy storage module 20, a first avalanche transistor ABJT1, the same number of relay avalanche transistors ABJT2 as the relay energy storage module 20, a trigger module 30, and a pulse output module 40.

[0030] Understandably, the first energy storage module 10 is the starting or triggering stage of the pulse formation process. It typically receives the initial trigger signal directly and initiates the discharge chain reaction of the entire circuit. At least one relay energy storage module 20 is an intermediate amplification stage of the circuit. Cascading multiple relay energy storage modules 20 is key to achieving voltage superposition and thus obtaining a high output voltage. The number of modules directly determines the final pulse voltage amplitude; theoretically, the output voltage ≈ number of stages × single-stage charging voltage.

[0031] It should be noted that both the first energy storage module 10 and the relay energy storage module 20 include energy storage devices, as well as charging and discharging circuits constructed around the energy storage devices. The energy storage devices are typically high-voltage capacitors. They are charged when the circuit is not operating, serving as the source of pulse energy. During the pulse interval, the DC high-voltage power supply slowly charges the capacitor through the charging circuit, replenishing its energy. When a pulse is generated, the capacitor rapidly discharges to the next stage or load through the discharging circuit and the avalanche transistor. In traditional Marx circuits, the charging and discharging circuits typically share a partial path or are isolated by resistors, which can lead to a trade-off between charging efficiency and discharging speed.

[0032] It should be noted that the relay energy storage module 20 in this embodiment incorporates a gating unit 21. The first output terminal of the trigger module 30 is connected to each gating unit 21.

[0033] It should be noted that the gating unit 21 is an important component of the relay energy storage module 20 in this embodiment. Specifically, the gating unit 21 is a controlled switch connected in series in the charging and discharging circuit of the relay energy storage module 20.

[0034] Specifically, the gating unit 21 is used to turn on when a turn-on signal is received to enable the charging circuit of the energy storage device in the relay energy storage module 20, and to turn off when a turn-off signal is received to enable the discharging circuit of the energy storage device in the relay energy storage module 20. The trigger module 30 can output a turn-on signal or a turn-off signal to the gating unit 21.

[0035] Understandably, the gating unit 21 clearly separates the slow, high-energy-efficiency charging process from the fast, low-impedance discharging process. Therefore, the charging and discharging circuits are built according to specific needs, effectively solving problems such as long charging times and significant energy loss through resistance caused by shared paths in traditional Marx circuits. Simultaneously, the trigger module 30 can precisely control the gating unit of each relay module, thereby coordinating the charging and discharging timing of the entire circuit. This ensures that all modules synchronously enter the discharging state at the correct time, which is crucial for generating high-quality pulses with clean waveforms and steep leading edges.

[0036] Understandably, through this highly controllable topology design and component coordination, it is easier to construct circuits that output positive high-voltage pulses, directly meeting the needs of cutting-edge applications that require positive pulses, without relying on inefficient external pulse inversion circuits.

[0037] It should be noted that the core working mechanism of the Marx pulse generation circuit is to use an avalanche transistor as a high-speed switch to connect multiple energy storage modules in a step-by-step manner to achieve voltage superposition and generate a high-voltage pulse. Therefore, combined with Figure 1 It is clear that in a pulse generation circuit, energy storage modules are usually connected in stages through avalanche transistors to achieve pulse superposition.

[0038] It is understandable that at least one relay energy storage module 20 means there can be only one relay energy storage module 20 or at least two relay energy storage modules 20. When the energy storage modules are connected step-by-step via avalanche transistors, the former means the connection between the modules is as follows: the first energy storage module 10 and the relay energy storage module 20 are connected via the first avalanche transistor ABJT1, and the relay energy storage module 20 is then connected to the pulse output module 40 via a relay avalanche transistor ABJT2.

[0039] Specifically, the output of the first energy storage module 10 is connected to the collector of the first avalanche transistor ABJT1; the emitter of the first avalanche transistor ABJT1 is connected to the input of the first-stage relay energy storage module 20; and the base of the first avalanche transistor ABJT1 is connected to the second output of the trigger module 30. The output of the last-stage relay energy storage module 20 is connected to the collector of the last-stage relay avalanche transistor ABJT2; and the emitter of the last-stage relay avalanche transistor ABJT2 is connected to the input of the pulse output module 40.

[0040] It should be noted that in the initial stage of a first energy storage module 10 cascaded with multiple relay energy storage modules 20, there must be a first-stage relay energy storage module 20 and a last-stage relay energy storage module 20. When there is only one relay energy storage module 20, it is both the first and last stage. At least two relay energy storage modules 20 mean that, in addition to the existing connections, there is also a connection between the relay energy storage modules 20 via relay avalanche transistors ABJT2.

[0041] Specifically, any two adjacent relay energy storage modules 20 cascaded together will necessarily have a front stage and a rear stage. They can be connected by connecting the output terminal of the front stage to the collector of the relay avalanche transistor ABJT2, and the input terminal of the rear stage to the emitter of the same relay avalanche transistor ABJT2.

[0042] It should be noted that, for any relay avalanche transistor ABJT2, its base and emitter are connected. This means that the relay avalanche transistor ABJT2 does not require controlled operation but conducts through a chain reaction. The first avalanche transistor ABJT1 and the relay avalanche transistor ABJT2 are not substantially different in this application; the distinction is made solely to illustrate the different connection relationships.

[0043] It should be noted that the connection in this application can be a direct circuit connection or a signal transmission via a communication protocol. A direct circuit connection refers to the most classic and direct electrical connection method. A physical, continuous electrical path is established between two points using passive or active components such as wires, PCB traces, resistors, capacitors, and inductors. Signal transmission via a communication protocol is a digital and intelligent connection method. It refers to a connection between two units that is not directly electrically connected, but rather transmits information through a standard digital communication bus. The sender encodes the signal into a digital protocol, and the receiver decodes it and executes the corresponding operation.

[0044] It should be noted that the input terminal refers to the port where a signal enters a functional module. This module receives instructions, energy, or data from external sources or other modules; the output terminal refers to the port where a signal leaves a functional module. This module exerts influence, provides energy, or sends data to external sources or other modules. The input and output terminals indicate the direction of the signal.

[0045] It should be noted that the trigger module 30 is used to send a turn-off signal to the base of the first avalanche transistor ABJT1 during the charging phase to turn off the first avalanche transistor ABJT1, and send a turn-on signal to each selection unit so that the first energy storage module 10 and each relay energy storage module 20 can be charged independently.

[0046] Understandably, the first avalanche transistor ABJT1 is the initiating switch for the discharge chain reaction in the entire Marx circuit. During the charging phase, it must be ensured to be in an absolutely reliable off state. Premature conduction of any avalanche transistor will cause incorrect discharge of the entire circuit, resulting in charging failure and potentially damaging components. By forcibly turning off ABJT1, the trigger module cuts off the discharge path formed by the pulse at its source, creating the prerequisite for a safe charging process. When all gating units 21 are turned on, they create a direct charging path for their respective energy storage modules. At this time, the DC high-voltage power supply can simultaneously and directly charge the energy storage capacitors of the first energy storage module 10 and all relay energy storage modules 20.

[0047] It should be noted that the trigger module 30 is also used to send a conduction signal to the base of the first avalanche transistor ABJT1 during the discharge phase to turn on the first avalanche transistor ABJT1, and send a turn-off signal to each selection unit; the avalanche breakdown of the first avalanche transistor ABJT1 triggers multiple relay avalanche transistors ABJT2 to undergo avalanche breakdown in sequence through the discharge circuit, so that each discharge circuit is connected to the pulse output module 40 through the broken avalanche transistor to form a pulse generation path; the electrical energy stored in each energy storage unit 22 is superimposed in series through the pulse generation path, and finally a high voltage positive pulse is generated on the pulse output module 40.

[0048] Understandably, the turn-on signal is a strong trigger pulse applied to the base of the first avalanche transistor ABJT1, causing it to immediately move from the cutoff region to the saturation region, triggering avalanche breakdown and thus instantly changing from a high-resistance state to a low-resistance state. A turn-off signal is sent to all gating units 21, causing all gating units to change from on to off. This disconnects all energy storage modules from the charging power supply and forcibly guides the discharge path of each energy storage module to its respective relay avalanche transistor ABJT2.

[0049] Understandably, all the avalanche transistors that are already conducting act like a set of rapidly closing switches, connecting the discharge circuits of the first energy storage module 10 and all the relay energy storage modules 20 in series to form a complete, low-impedance discharge circuit that directly discharges the pulse output module 40 in the forward direction.

[0050] In this embodiment, due to the use of a circuit structure in which the first energy storage module and the relay energy storage module containing the gating unit are cascaded through avalanche transistors, during the charging phase, the trigger module controls each energy storage module to charge independently, which provides a basis for simplifying the charging circuit and thus improving charging efficiency. During the discharging phase, the trigger module turns off the gating unit, so that the avalanche breakdown of the first avalanche transistor triggers the breakdown of subsequent relay avalanche transistors in sequence through a specially constructed discharge circuit, forming a series pulse generation path. This path is completely independent of the charging circuit, avoiding the problem of discharge energy being consumed by the charging path in traditional schemes. Finally, through the series superposition of the electrical energy of each energy storage unit and the positive output, a high-voltage positive pulse is generated on the pulse output module, which significantly improves energy utilization efficiency and pulse output performance compared with the prior art.

[0051] Furthermore, based on the above embodiments, this application provides optional examples of each module to constitute a specific implementation method.

[0052] Specifically, please refer to Figure 3 , Figure 3 This is a circuit topology diagram of the first energy storage module provided in an embodiment of this application. Figure 3In the first energy storage module 10, there are: a first resistor R1 and a first capacitor C1; the first end of the first resistor R1 is connected to the power supply, and the second end of the first resistor R1 is connected to the collector of the first avalanche transistor ABJT1 and the first end of the first capacitor C1 respectively; the second end of the first capacitor C1 is grounded.

[0053] Understandably, the first resistor R1 serves a dual function of current limiting during charging and isolation during discharging. It limits the inrush current during charging and prevents backflow during discharging, ensuring efficient energy transfer. The first capacitor C1, as the core energy storage unit, is responsible for converting electrical energy into electric field energy for temporary storage, providing the energy basis for pulse formation. This module, through the precise conduction of the first avalanche transistor ABJT1, converts the stored energy into an initial pulse, thereby triggering the subsequent cascaded discharge process; it is the original driving source of the entire high-voltage pulse generation circuit.

[0054] Specifically, please refer to Figure 4 , Figure 4 This is the second structural block diagram of the high-voltage positive pulse generating circuit provided in the embodiments of this application.

[0055] exist Figure 4 In the relay energy storage module 20, there is also an energy storage unit 22; the first end of the energy storage unit 22 is connected to the power supply, the second end of the energy storage unit 22 is connected to the collector of the next avalanche transistor, and the third end of the energy storage unit 22 is connected to the emitter of the previous avalanche transistor and the first end of the gating unit 21 respectively; the second end of the gating unit 21 is connected to the first output end of the trigger module 30, and the third end of the gating unit 21 is grounded; the energy storage unit 22 is used to charge through the power supply when the gating unit 21 is turned on, and is also used to discharge through the avalanche transistor when the gating unit 21 is turned off.

[0056] Understandably, the direct grounding design of the gating unit 21 achieves physical isolation and rapid switching of the charging and discharging circuits through a single control node. This design utilizes the gating unit 21 to control the ground potential, establishing a direct charging circuit to ground in the on-state and forcing the energy storage unit 22 to redirect energy to the avalanche transistor discharge circuit in the off-state. This grounding-based control simultaneously completes circuit reconfiguration and energy redirection with a minimal architecture, eliminating the complexity of traditional multi-component switching and significantly improving charging and discharging efficiency and pulse quality by reducing circuit impedance and parasitic parameters. This embodies the design philosophy of achieving maximum performance gain with minimal control cost.

[0057] Specifically, please refer to Figure 5 , Figure 5 This is a circuit topology diagram of the relay energy storage module provided in the embodiments of this application.

[0058] In this embodiment, the selection unit 21 includes one of a relay, a transistor, a MOSFET, or an insulated gate bipolar transistor (IGBT) Q2. When the selection unit 21 is an IGBT Q2, the gate of the IGBT Q2 is connected to the first output terminal of the trigger module 30, the collector of the IGBT Q2 is connected to the third terminal of the energy storage unit 22, and the emitter of the IGBT Q2 is grounded.

[0059] Understandably, in the selection of components for the gating unit 21, relays, transistors, and MOSFETs can all achieve basic switching functions, but the Insulated Gate Bipolar Transistor (IGBT) exhibits superior overall performance. While relays can withstand high voltage and high current, their mechanical action delay reaches millisecond levels, failing to meet the rapid control requirements of nanosecond pulses. Transistors, as current-driven devices, require continuous base current to maintain conduction, resulting in high drive power consumption and significant heat generation. Although MOSFETs are voltage-controlled devices, their on-resistance increases significantly in high-voltage applications, leading to increased energy loss. The IGBT combines the voltage-driven advantages of MOSFETs with the low on-state voltage drop characteristics of transistors, achieving nanosecond-level switching speeds while maintaining low conduction losses under high-voltage conditions. Furthermore, its drive circuit is simple and reliable, making it the optimal choice for the gating unit in high-voltage pulse applications.

[0060] exist Figure 5 In the middle, the energy storage unit 22 includes: a second resistor R2 and a second capacitor C2; the first end of the first resistor R1 is connected to the power supply, and the second end of the first resistor R1 is connected to the collector of the second avalanche transistor and the first end of the second capacitor C2 respectively; the second end of the first capacitor C1 is connected to the emitter of the first avalanche transistor and the first end of the gating unit 21 respectively.

[0061] It should be noted that the functions of the second resistor R2 and the second capacitor C2 are essentially the same as those of the first resistor R1 and the first capacitor C1. Thus, the charging circuit consists of the power supply, the second resistor R2, the second capacitor C2, the insulated-gate bipolar transistor Q2, and finally, the ground terminal; the discharging circuit consists of the avalanche transistor in the preceding stage, the second capacitor C2, and then the avalanche transistor in the following stage. Switching is achieved by whether the insulated-gate bipolar transistor Q2 is turned on or off.

[0062] Specifically, please refer to Figure 6 , Figure 6 This is the third structural block diagram of the high-voltage positive pulse generating circuit provided in the embodiments of this application.

[0063] exist Figure 6In the process, the trigger module 30 includes: a first trigger unit 31 and a second trigger unit 32; the output terminal of the first trigger unit 31 is connected to each gating unit respectively; the output terminal of the second trigger unit 32 is connected to the base of the first avalanche transistor ABJT1; the first trigger unit 31 is used to control the on / off state of the gating unit; the second trigger unit 32 is used to control the on / off state of the first avalanche transistor ABJT1.

[0064] Understandably, the dual-path independent control architecture of the first trigger unit 31 and the second trigger unit 32 enables precise and coordinated management of the charging and discharging process. The first trigger unit 31 simultaneously controls the on and off states of all gating units 21 through an independent output channel, ensuring the synchronous switching of the charging and discharging states of each stage of the energy storage module; the second trigger unit 32 specifically drives the base of the first-stage avalanche transistor, controlling the initiation timing of the discharge chain reaction. This dual-path separation control scheme can achieve rapid reconfiguration of the charging and discharging circuit through the first trigger unit 31, and can also precisely control the pulse triggering time through the second trigger unit 32. The coordinated work of the two avoids the timing conflicts that may occur in traditional single-path triggering, and ensures the timing accuracy of the entire process from charging preparation to pulse generation, providing a reliable control guarantee for the stable generation of high-voltage pulses.

[0065] Specifically, please refer to Figure 7 , Figure 7 This is a topology diagram of a high-voltage positive pulse generating circuit provided in an embodiment of this application.

[0066] exist Figure 7 In the first trigger unit 31, there is a first driver QD1. The positive terminal of the first driver QD1 is connected to each gating unit, and the negative terminal of the first driver QD1 is grounded. The first trigger unit directly controls the synchronous switching of all gating units through the driver, thus establishing a rapid switching of the charging and discharging circuit.

[0067] exist Figure 7 In the second trigger unit 32, there are: a second driver QD2, a trigger capacitor C0 and a trigger resistor R0; the positive terminal of the second driver QD2 is connected to the first terminal of the trigger capacitor C0; the second terminal of the trigger capacitor C0 is connected to the gate of the first avalanche transistor ABJT1 and the first terminal of the trigger resistor R0 respectively; the second terminal of the trigger resistor R0 is connected to the negative terminal of the second driver QD2 and the emitter of the first avalanche transistor ABJT1 respectively; the negative terminal of the second driver QD2 is internally floating.

[0068] Understandably, the second driver QD2 outputs a transition voltage, such as jumping from 0V to a high level. This voltage rapidly charges the trigger capacitor C0. The charging current flows through the trigger capacitor C0 and the trigger resistor R0, and this instantaneous current generates a voltage pulse between the base and emitter of the ABJT1. Due to the DC blocking and AC passing characteristics of the trigger capacitor C0, it only allows the transient voltage change to pass through, thus differentiating a level transition into a sharp, narrow pulse. This differentiating circuit formed by the trigger capacitor C0 and the trigger resistor R0 ensures that the pulse applied to the base of the first avalanche transistor ABJT1 is a pulse with a very steep leading edge and a very short duration, which is the ideal signal required for fast and reliable triggering of an avalanche transistor.

[0069] Understandably, the floating negative terminal of the second driver QD2 causes the ground reference of the second trigger unit 32 to be floating. It is no longer referenced to ground, but rather to the emitter of the first avalanche transistor ABJT1. When the first avalanche transistor ABJT1 is turned on, its emitter potential changes drastically, such as rapidly rising, and this floating ground reference changes accordingly. This prevents damage to the second driver QD2 due to drastic changes in the reference point potential and ensures that the potential of the trigger pulse relative to the emitter of the first avalanche transistor ABJT1 is always correct, thereby improving the stability and reliability of the system.

[0070] Understandably, the second trigger unit works with a dedicated driver through an RC differentiator circuit to convert the level signal into a narrow pulse to accurately trigger the first avalanche diode. Its floating ground design ensures the stability of the trigger signal and isolates power ground noise.

[0071] exist Figure 7 In this design, the pulse output module 40 includes a load resistor RL; the first terminal of the load resistor RL is connected to the emitter of the last stage relay avalanche transistor ABJT2; the second terminal of the load resistor RL is grounded. This design achieves efficient output of pulse energy and provides stable impedance matching for the system by converting the pulse current across the load resistor RL into a measurable voltage signal.

[0072] The specific flow of this embodiment is shown here: The first driver QD1 provides a negative voltage to control the effective turn-off of the insulated gate bipolar transistor Q. The second driver QD2 provides a positive trigger voltage to control the turn-on of the first avalanche transistor ABJT1. The first capacitor C1 discharges to form a circuit C1-ABJT1-C2, generating a positive pulse voltage on the collector of the insulated gate bipolar transistor Q. Since the voltage difference across capacitor C2 remains constant, the collector voltage of the second avalanche transistor ABJT2 rises, thereby increasing the collector-emitter voltage of ABJT2, causing the second avalanche transistor ABJT2 to turn on due to overvoltage. C1 and C2 discharge in series to form a circuit C1-ABJT1-C2-ABJT2-C2, generating a positive pulse on the next-stage insulated gate bipolar transistor Q to trigger the turn-on of the next-stage second avalanche transistor ABJT2. Finally, the output is superimposed to the load resistor RL.

[0073] In this embodiment, a Marx cascade circuit is constructed using multiple ABJTs, capacitors, resistors, and an insulated-gate bipolar transistor (IGBT) Q. The trigger terminal of the first stage is left floating, thus providing a positive trigger pulse to subsequent stages. This results in a positive output pulse generated on the load RL. The Marx cascade circuit using ABJTs also enables miniaturization of the high-voltage positive pulse device. The use of the IGBT Q replaces the original trigger resistor, reducing charging time during the charging phase and minimizing capacitor energy loss during the triggering phase, thereby increasing the amplitude of the final output pulse formed during the discharging phase.

[0074] In addition to the above embodiments, this application also proposes a high-voltage positive pulse generator, including and employing the high-voltage positive pulse generating circuit described in the above embodiments. This solves the problem that the pulse inversion scheme of the traditional avalanche transistor Marx circuit is limited by the negative pulse structure, resulting in long charging time and high discharge energy consumption, making it unsuitable for positive pulse scenarios. Compared with the prior art, the beneficial effects of the high-voltage positive pulse generator provided by this application are the same as those of the high-voltage positive pulse generating circuit provided in the above embodiments, and other technical features in the high-voltage positive pulse generator are the same as those disclosed in the methods of the above embodiments, and will not be repeated here.

[0075] Specifically, it should be clarified that any device, apparatus, or system that includes the high-voltage positive pulse generating circuit disclosed in this application, regardless of its specific application, shall fall within the scope of the "high-voltage positive pulse generating device" described in this application. This includes, but is not limited to: plasma application devices, such as material surface treatment equipment; biomedical equipment, such as tumor ablation therapy instruments; industrial processing devices, such as food sterilization systems; and scientific research and testing devices, such as pulsed laser driving power supplies. These applications all rely on the positive polarity nanosecond pulses generated by this circuit as the key technological foundation for realizing their core functions.

[0076] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A high-voltage positive pulse generating circuit, characterized in that, include: A first energy storage module, at least one relay energy storage module including a gating unit, a first avalanche transistor, the same number of relay avalanche transistors as the relay energy storage module, a trigger module, and a pulse output module; The first output terminal of the trigger module is connected to each of the gating units; The output terminal of the first energy storage module is connected to the collector of the first avalanche transistor; the emitter of the first avalanche transistor is connected to the input terminal of the first-stage relay energy storage module; the base of the first avalanche transistor is connected to the second output terminal of the trigger module; the output terminal of the last-stage relay energy storage module is connected to the collector of the last-stage relay avalanche transistor; the emitter of the last-stage relay avalanche transistor is connected to the input terminal of the pulse output module; when there are at least two relay energy storage modules, any two adjacent relay energy storage modules are connected by connecting the output terminal of the preceding stage to the collector of the relay avalanche transistor, and the input terminal of the following stage to the emitter of the same relay avalanche transistor; wherein, the base and emitter of the relay avalanche transistor are connected; The gating unit is used to turn on when a turn-on signal is received to enable the charging circuit of the energy storage device of the relay energy storage module, and to turn off when a turn-off signal is received to enable the discharging circuit of the energy storage device of the relay energy storage module. The triggering module is used to send a turn-off signal to the base of the first avalanche transistor during the charging phase to turn off the first avalanche transistor, and to send a turn-on signal to each of the gating units so that the first energy storage module and each of the relay energy storage modules can be charged independently. The triggering module is also used to send a conduction signal to the base of the first avalanche transistor during the discharge phase to turn on the first avalanche transistor, and send a turn-off signal to each of the selection units; the avalanche breakdown of the first avalanche transistor triggers multiple relay avalanche transistors to undergo avalanche breakdown in sequence through the discharge circuit, so that each of the discharge circuits is connected to the pulse output module through the broken-down avalanche transistors to form a pulse generation path; the electrical energy stored in each energy storage unit is superimposed in series through the pulse generation path, and finally a high-voltage positive pulse is generated on the pulse output module.

2. The high-voltage positive pulse generating circuit as described in claim 1, characterized in that, The first energy storage module includes: a first resistor and a first capacitor; The first end of the first resistor is connected to the power supply, and the second end of the first resistor is connected to the collector of the first avalanche transistor and the first end of the first capacitor, respectively. The second terminal of the first capacitor is grounded.

3. The high-voltage positive pulse generating circuit as described in claim 2, characterized in that, The relay energy storage module further includes: an energy storage unit; The first end of the energy storage unit is connected to the power supply, the second end of the energy storage unit is connected to the collector of the next avalanche transistor, and the third end of the energy storage unit is connected to the emitter of the previous avalanche transistor and the first end of the gating unit, respectively. The second end of the gating unit is connected to the first output end of the trigger module, and the third end of the gating unit is grounded. The energy storage unit is used to charge the device via a power source when the gating unit is turned on, and to discharge the device via an avalanche transistor when the gating unit is turned off.

4. The high-voltage positive pulse generating circuit as described in claim 3, characterized in that, The energy storage unit includes: a second resistor and a second capacitor; The first end of the first resistor is connected to the power supply, and the second end of the first resistor is connected to the collector of the avalanche transistor and the first end of the second capacitor, respectively. The second terminal of the first capacitor is connected to the emitter of the previous avalanche transistor and the first terminal of the gating unit, respectively.

5. The high-voltage positive pulse generating circuit as described in claim 1, characterized in that, The selection unit includes one of a relay, a transistor, a MOSFET, or an insulated gate bipolar transistor; When the selection unit is an insulated gate bipolar transistor (IGBT), the gate of the IGBT is connected to the first output terminal of the trigger module, the collector of the IGBT is connected to the third terminal of the energy storage unit, and the emitter of the IGBT is grounded.

6. The high-voltage positive pulse generating circuit as described in claim 1, characterized in that, The triggering module includes: a first triggering unit and a second triggering unit; The output terminal of the first trigger unit is connected to each of the gating units; the output terminal of the second trigger unit is connected to the base of the first avalanche transistor. The first triggering unit is used to control the on / off state of the gating unit; the second triggering unit is used to control the on / off state of the first avalanche transistor.

7. The high-voltage positive pulse generating circuit as described in claim 6, characterized in that, The first triggering unit includes: a first driver; The positive terminal of the first driver is connected to each of the selected units, and the negative terminal of the first driver is grounded.

8. The high-voltage positive pulse generating circuit as described in claim 6, characterized in that, The second trigger unit includes: a second driver, a trigger capacitor, and a trigger resistor; The positive terminal of the second driver is connected to the first terminal of the trigger capacitor; the second terminal of the trigger capacitor is connected to the gate of the first avalanche transistor and the first terminal of the trigger resistor, respectively. The second end of the trigger resistor is connected to the negative end of the second driver and the emitter of the first avalanche transistor, respectively; the negative end of the second driver is left floating.

9. The high-voltage positive pulse generating circuit as described in claim 1, characterized in that, The pulse output module includes: a load resistor; The first end of the load resistor is connected to the emitter of the last stage relay avalanche transistor; the second end of the load resistor is grounded.

10. A high-voltage positive pulse generator, characterized in that, The high-voltage positive pulse generator includes: a high-voltage positive pulse generating circuit as described in any one of claims 1 to 9.

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