A transition ring for a detector package and a detector package structure

Abstract

The utility model relates to the technical field of semiconductor packaging, specifically relates to a kind of transition ring and detector packaging structure for detector packaging, including porcelain ring base body, and the inside wall of porcelain ring base body has internal step, and at least one getter assembly is arranged on internal step;Getter assembly includes getter suspended in the upper of internal step and two metallized bosses spaced apart on internal step, and metallized boss is integrally formed with porcelain ring base body, and the both ends of getter are electrically connected with two metallized bosses respectively.The utility model is integrally formed with metallized boss on internal step, not only realizes the double function of the bearing fixation and conductive activation of getter, but also completely cancels traditional independent metal gasket part, reduces material type and supply chain management cost, saves metal gasket positioning, pre-fixing and other assembly processes, while reducing heat loss in activation process, improves activation efficiency and reliability.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, specifically to a transition ring for detector packaging and a detector packaging structure. Background Technology

[0002] Current wafer-level detector packaging structures primarily employ a three-layer stacked bonding architecture consisting of a window, a transition ring, and a chip. The transition ring is typically made of ceramic, with an upper metallization layer on its top surface and a lower metallization layer on its bottom surface. These layers are hermetically bonded to the periphery of the window and chip via upper and lower interconnect layers, respectively, forming a sealed encapsulation cavity. To maintain a high vacuum within the encapsulation cavity, a getter is required to adsorb residual gases. A traditional approach involves creating internal steps on the inner wall of the transition ring, pre-fixing independent metal gaskets on these steps, and then soldering the getter to the surface of the metal gaskets. An electrically activated pad is placed on the outer wall of the transition ring, electrically connected to the metal gasket. By externally energizing the electrically activated pad, the getter is activated, maintaining the cavity vacuum for an extended period.

[0003] However, the use of independent metal gaskets has the following technical drawbacks: 1) The number of parts is large, the assembly process is cumbersome, and the production efficiency is low; additional processing and procurement of independent metal gasket parts are required, increasing material management costs; during assembly, additional gasket positioning and pre-fixing processes are required, lengthening the packaging process flow, which is not conducive to wafer-level mass production and limits capacity improvement; 2) Assembly accuracy is difficult to control, resulting in low product yield; the metal gaskets are small in size, and misalignment or tilting is prone to occur during manual or equipment alignment; during the welding process, defects such as incomplete soldering, desoldering, and gasket detachment are prone to occur, directly leading to getter fixation. Failure or interruption of the conductive path ultimately results in the vacuum level of the packaging cavity not meeting the standard, and the overall product yield is low; 3) High manufacturing costs; Independent metal pads themselves have material costs and precision processing costs, and additional assembly and testing processes will generate labor and equipment losses, which significantly increases the overall cost of detector packaging; 4) Structural redundancy limits the development of device miniaturization; Independent metal pads have a certain thickness and installation margin, which will squeeze the limited cavity space inside the transition ring, forcing the overall size of the transition ring to increase, which cannot meet the current demand for miniaturization and thinning of detectors. Utility Model Content

[0004] The purpose of this invention is to provide a transition ring for detector packaging and a detector packaging structure, which can at least solve some of the defects in the prior art.

[0005] To achieve the above objectives, the technical solution of this utility model is a transition ring for detector packaging, comprising a ceramic ring substrate, wherein the inner sidewall of the ceramic ring substrate has an inwardly protruding internal step, and at least one getter assembly is disposed on the internal step; the getter assembly includes a getter suspended above the internal step and two metallized bosses spaced apart on the internal step, the metallized bosses being integrally formed with the ceramic ring substrate, and the two ends of the getter being electrically connected to the two metallized bosses respectively.

[0006] As one embodiment, the metallized boss is a tungsten metallized boss or a molybdenum-manganese metallized boss.

[0007] As one embodiment, the top surface of the metallized boss is provided with a conductive plating layer, and the getter is electrically connected to the conductive plating layer.

[0008] As one embodiment, the conductive plating layer is any one of Ni / Au layer, Ni layer, Ni / Pd / Au layer, and Ni / Pd layer.

[0009] As one embodiment, a ceramic boss is provided on the internal step at the position corresponding to the metallized boss. The metallized boss is disposed on the corresponding ceramic boss, and the metallized boss, the ceramic boss and the ceramic ring substrate are integrally formed.

[0010] As one embodiment, the height of the ceramic boss is 100~300 μm.

[0011] As one implementation method, an avoidance groove is provided on the internal step corresponding to the area between the two metallized bosses.

[0012] As one implementation method, the area between the two metallized bosses on the internal step is hollowed out.

[0013] As one embodiment, the getter is a sheet-shaped getter, and both ends of the sheet-shaped getter are respectively welded to two metallized bosses; or, the getter is a film-shaped getter, and both ends of the film-shaped getter are respectively deposited on two metallized bosses.

[0014] This utility model also provides a detector packaging structure, including a chip and a window, and further including a transition ring for detector packaging as described in any of the above. The top and bottom surfaces of the ceramic ring substrate are respectively welded to the window and the chip.

[0015] Compared with the prior art, the present invention has the following beneficial effects: (1) This utility model sets a metallized boss integrally formed with the ceramic ring substrate on the internal step, and makes the two ends of the getter electrically connected to the two metallized bosses respectively. The main body in the middle is suspended above the internal step. This not only realizes the dual functions of load-bearing and fixing of the getter and conductive activation, but also completely eliminates the traditional independent metal gasket parts, reduces the types of materials and supply chain management costs, and saves the assembly process such as positioning and pre-fixing of metal gaskets. When activated by electricity, the vacuum gap formed between the main body of the getter and the top surface of the internal step can achieve efficient heat insulation. Only a very small part is conducted downward through the tiny contact surface of the metallized boss, so that most of the heat generated by the getter is used for its own heating. It can quickly reach and maintain the activation temperature, effectively avoid the activation failure problem caused by heat loss, and improve the activation efficiency and reliability of the getter. (2) By setting ceramic bosses on the internal steps to support metallized bosses, or by recessing the area between two corresponding metallized bosses on the internal steps to form an avoidance groove / direct hollowing, the heat insulation effect can be further improved, and the heat from the getter activation can be prevented from being conducted to the ceramic ring matrix and dissipated, resulting in insufficient activation. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A cross-sectional view of the transition ring for detector packaging provided in an embodiment of this utility model; Figure 2 A perspective view of the transition ring for detector packaging provided in an embodiment of this utility model; Figure 3 A cross-sectional view of a transition ring for a detector package with ceramic protrusions provided in an embodiment of this utility model; Figure 4 A top view of a transition ring for a detector package with ceramic protrusions provided in an embodiment of this utility model; Figure 5 A perspective view of a transition ring for detector packaging with ceramic protrusions provided in an embodiment of this utility model; Figure 6 A top view of a transition ring for detector packaging with an avoidance groove provided in an embodiment of the present utility model; Figure 7 A perspective view of a transition ring for detector packaging with an avoidance groove provided in an embodiment of the present utility model; Figure 8 A cross-sectional view of a transition ring for a detector package with an avoidance groove provided in an embodiment of the present invention; Figure 9 A top view of a transition ring for detector encapsulation with a hollowed-out area provided in an embodiment of this utility model; Figure 10 A perspective view of a transition ring for detector encapsulation with a hollowed-out area provided in an embodiment of this utility model; Figure 11 Top view of a transition ring for detector encapsulation using a thin-film getter provided in an embodiment of the present invention; Figure 12 An exploded view of the detector packaging structure provided in an embodiment of this utility model; In the diagram: 1. Window; 2. First connecting layer; 3. Transition ring; 301. Upper metallization layer; 302. Ceramic ring substrate; 303. Electro-activated pad; 304. Ceramic boss; 305. Lower metallization layer; 306. Metallization boss; 307. Clearance groove; 308. Cutout area; 309. Metallized trace; 310. Through hole; 4. Getter; 5. Second connecting layer; 6. Chip. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.

[0019] In the description of this utility model, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0020] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; in the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0021] like Figures 1-2 As shown, this embodiment provides a transition ring 3 for detector packaging, including a ceramic ring substrate 302. The inner sidewall of the ceramic ring substrate 302 has an inner step protruding inward. At least one getter assembly is disposed on the inner step. The getter assembly includes a getter 4 suspended above the inner step and two metallized bosses 306 spaced apart on the inner step. The metallized bosses 306 are integrally formed with the ceramic ring substrate 302, and the two ends of the getter 4 are electrically connected to the two metallized bosses 306 respectively. This embodiment features a metallized boss 306 integrally formed with the ceramic ring substrate 302 on the internal step. Both ends of the getter 4 are electrically connected to the two metallized bosses 306, allowing the main body of the getter 4 to be suspended above the internal step. This not only achieves the dual functions of load-bearing and fixing the getter 4 while also providing conductive activation, but also completely eliminates the need for traditional independent metal gaskets, reducing material types and supply chain management costs, and saving assembly processes such as metal gasket positioning and pre-fixing. During electrical activation, the vacuum gap between the main body of the getter 4 and the top surface of the internal step provides efficient heat insulation. Only a very small portion of the heat is conducted downwards through the tiny contact surface of the metallized bosses 306, ensuring that most of the heat generated by the getter 4 is used for self-heating. This allows for rapid attainment and maintenance of the activation temperature, effectively preventing activation failure due to heat loss and improving the activation efficiency and reliability of the getter 4.

[0022] Furthermore, the metallized boss 306 is a tungsten metallized boss 306 or a molybdenum-manganese metallized boss 306. In this embodiment, the metallized boss 306 uses either tungsten or molybdenum-manganese metallized boss 306, which not only has excellent conductivity, meeting the activation requirements of the getter 4, but also excellent chemical stability and matches the thermal expansion coefficient with the ceramic substrate, avoiding sintering cracking and delamination. The thickness of the metallized boss 306 is much smaller than the thickness of the independent metal gasket, eliminating the need for gasket installation allowance. This allows for sufficient compression of the inner space of the transition ring 3, reducing the overall size and thickness of the transition ring 3, which is beneficial for the miniaturization and thinning of the detector. The height difference of the metallized boss 306 creates a vacuum gap between the main body of the getter 4 and the top surface of the internal step, achieving efficient heat insulation and preventing heat loss to the ceramic ring substrate 302. Furthermore, most of the bottom surface of the getter 4 does not directly contact the metallized boss 306 and the ceramic ring substrate 302, with only a very small area on the metallized boss 306 having contact heat transfer, which greatly reduces heat loss and improves the activation efficiency and reliability of the getter 4. It balances heat insulation performance and structural stability within an ultra-thin packaging size.

[0023] Among them, the tungsten metallized boss 306 or the molybdenum-manganese metallized boss 306 can be adapted to different ceramic working conditions of the ceramic ring substrate 302. The tungsten metallized boss 306 is made of high-purity tungsten metal. It is formed by printing paste on the green body of the ceramic ring substrate 302 and then co-firing at a high temperature of 1500~1600℃. It has low resistivity and high temperature resistance, and is suitable for high-power, high thermal conductivity ceramic ring substrate 302. The molybdenum-manganese metallized boss 306 is composed of molybdenum powder as the main body, combined with manganese powder and glass phase. It is formed by printing paste on the green body of the ceramic ring substrate 302 and then co-firing at a high temperature of about 1500℃. It can form a stable chemical wetting bond with alumina ceramic by relying on the glass phase, with excellent bonding strength, and is suitable for most ceramic ring substrates 302.

[0024] In some embodiments, a conductive plating layer is provided on the top surface of the metallized boss 306, and the getter 4 is electrically connected to the conductive plating layer. This embodiment can add a conductive plating layer to the top surface of the metallized boss 306 according to product requirements, which can effectively improve the surface flatness and conductivity uniformity of the metallized boss 306, ensuring a stable and reliable electrical connection between the getter 4 and the metallized boss 306. Simultaneously, the conductive plating layer can protect the surface of the metallized boss 306, which is particularly suitable for laser welding processes. The metallized boss 306 can connect the conductive plating layer and the ceramic ring substrate 302, while also achieving electrical conductivity between the conductive plating layer and the metallized traces 309 inside the ceramic ring substrate 302. The conductive coating can be prepared on the top surface of the metallized boss 306 by patterned electroplating or chemical plating after the metallized boss 306 and the ceramic ring substrate 302 are integrally formed by high-temperature co-firing. It is fully compatible with the existing mass production process of the transition ring 3, without the need for additional special equipment. Moreover, its size, thickness and position are precisely controlled by the photolithography pattern, resulting in high process consistency. The contact area and suspension gap of the getter 4 of different devices are uniform, the thermal conductivity deviation is small, and the activation degree of the getter 4 is uniform, which effectively improves the performance consistency of batch products.

[0025] Furthermore, the conductive coating is any one of a Ni / Au layer, a Ni layer, a Ni / Pd / Au layer, or a Ni / Pd layer. In this embodiment, the conductive coating can be flexibly selected as needed, taking into account cost, reliability, and mass production adaptability. Specifically, the conductive coating can be a Ni layer to meet conventional welding and protection requirements; the conductive coating can also be a double-layer composite Ni / Au layer, which has mature technology and stable performance, suitable for welding products under conventional working conditions; the conductive coating can also be a triple-layer composite Ni / Pd / Au layer, which utilizes the excellent diffusion barrier properties of the palladium layer to significantly improve resistance to damp heat and aging, suitable for welding conditions with high reliability and long life requirements; the conductive coating can also be a double-layer composite Ni / Pd layer, which has lower mass production costs.

[0026] In this embodiment, the ceramic ring substrate 302 is formed by stacking and sintering multiple layers of ceramic green sheets. The metallized protrusions 306 are directly prepared on the ceramic green sheets with internal steps. Then, the multiple layers of ceramic green sheets with metallized protrusions 306 are stacked and co-fired at high temperature to form a whole.

[0027] like Figures 3-5 As shown, in some embodiments, a ceramic boss 304 is provided on the internal step at the position corresponding to the metallized boss 306. The metallized boss 306 is disposed on the corresponding ceramic boss 304, and the metallized boss 306, the ceramic boss 304, and the ceramic ring substrate 302 are integrally formed. By providing a ceramic boss 304 on the internal step and placing the metallized boss 306 on the ceramic boss 304, the vacuum insulation gap between the bottom surface of the getter 4 and the top surface of the internal step can be increased, further improving the heat insulation effect and preventing the heat from being conducted to the ceramic ring substrate 302 and dissipating during the activation of the getter 4, thus avoiding insufficient activation. Furthermore, the height of the ceramic boss 304 is 100~300 μm, ensuring effective heat insulation while also considering process feasibility.

[0028] In this embodiment, the metallized boss 306, the ceramic boss 304, and the ceramic ring substrate 302 are integrally formed by high-temperature co-firing using the HTCC process. This simplifies the manufacturing process, reduces manufacturing costs, and eliminates the misalignment and tilting assembly errors associated with separate gaskets. The welding reference accuracy is guaranteed by the electroplating pattern accuracy, resulting in consistency far superior to manual / equipment-assembled gaskets. Simultaneously, the welding directly acts on the top surface of the metallized boss 306 or the conductive plating layer, ensuring precise welding positioning and effectively avoiding defects such as incomplete soldering, detachment, and gasket fall-off. This significantly improves product packaging yield and ensures good batch consistency. The ceramic boss 304 is formed by sintering multiple layers of green blanks on a ceramic green blank with internal steps. This results in high structural strength, good stability, and strong vibration and impact resistance. Furthermore, the height of the ceramic boss 304 can be flexibly controlled by adjusting the number of green blank layers to meet different support height requirements.

[0029] like Figures 6-8 As shown, in some embodiments, a clearance groove 307 is provided on the internal step corresponding to the area between the two metallized protrusions 306. By recessing the area on the internal step corresponding to the area between the two metallized protrusions 306 to form the clearance groove 307, the main body of the getter 4 is suspended above the clearance groove 307. This increases the vacuum insulation gap between the bottom surface of the getter 4 and the internal step below it, further improving the insulation effect and preventing heat from being conducted to the ceramic ring substrate 302 and dissipating during getter 4 activation, thus preventing insufficient activation. Furthermore, the width of the clearance groove 307 is greater than the width of the middle part of the getter 4, and the length of the clearance groove 307 can be consistent with the distance between the two metallized protrusions 306.

[0030] In this embodiment, a recessed clearance groove 307 is prepared in the area between two corresponding metallized bosses 306 using an HTCC green body patterning process on a ceramic green body sheet with internal steps. This allows the clearance groove 307 to be formed synchronously with the ceramic ring substrate 302, eliminating the need for additional machining processes, resulting in low process costs and good batch consistency. The central main body of the getter 4 is directly opposite the clearance groove 307 and has no physical contact with the ceramic ring substrate 302.

[0031] like Figures 8-10 As shown, in some embodiments, the area between the two metallized protrusions 306 on the internal step is hollowed out. By hollowing out the area between the two metallized protrusions 306 on the internal step to form a hollowed-out area 308, the main body of the getter 4 is suspended above the hollowed-out area 308, and there is no ceramic ring substrate 302 directly below the main body of the getter 4. This minimizes heat conduction to the ceramic ring substrate 302 during getter 4 activation, thus improving the activation effect of the getter 4. Furthermore, the width of the hollowed-out area 308 on the internal step is greater than the width of the middle part of the getter 4, and the length of the hollowed-out area 308 can be consistent with the distance between the two metallized protrusions 306.

[0032] In this embodiment, the ceramic green sheet with internal steps is completely removed through the area between the two corresponding metallized protrusions 306 using the HTCC green sheet patterning process, so that the hollow area 308 and the ceramic ring substrate 302 are formed simultaneously, without the need for additional machining processes, resulting in low process cost and good batch consistency. The middle main body of the getter 4 is directly opposite the hollow area 308 on the internal steps, and is in a completely suspended state.

[0033] Furthermore, the getter 4 is a sheet-like getter, and both ends of the sheet-like getter are welded to two metallized bosses 306 respectively; or, the getter 4 is a thin-film getter, and both ends of the thin-film getter are deposited on two metallized bosses 306 respectively. In this embodiment, the getter 4 can be a sheet-like getter or a thin-film getter, which can be flexibly selected according to the encapsulation process and application requirements. When the getter 4 is a sheet-like getter, it has a metal sheet or alloy sheet of a certain thickness, which can be a strip structure. After the ceramic substrate and the metallized bosses 306 are integrally sintered, the two ends of the sheet-like getter are respectively connected to the functional upper layer of the two metallized bosses 306 by welding, so that the main body part in the middle of the sheet-like getter is suspended; when the getter 4 is a thin-film getter, after the ceramic substrate and the metallized bosses 306 are integrally sintered, a thin-film getter is selectively deposited, such as Figure 11As shown, a mask-based selective physical vapor deposition (SPV) process combined with MEME technology can be used to prepare a suspended thin-film getter above and on the two metallized bosses 306. This allows the getter to directly form a metallurgical bond with the metallized bosses 306, eliminating the need for solder joints and assembly interfaces. This results in extremely high structural reliability and significantly better vibration and high / low temperature shock resistance than surface mount solutions. Furthermore, it completely eliminates the need for separate getter parts and welding assembly processes, leading to an order-of-magnitude increase in production efficiency and a substantial reduction in material and manufacturing costs. Simultaneously, the position, thickness, and shape of the getter are precisely controlled by the mask, resulting in processing accuracy far exceeding that of mechanical surface mounts. This ensures excellent batch consistency, making it suitable for millimeter-scale micro-packages. It can also fully utilize the inner corner space of the transition ring 3 to increase the area of ​​the getter 4.

[0034] In some embodiments, the outer wall of the ceramic ring substrate 302 has an outwardly extending outer support, and an electrically activated pad 303 electrically connected to the metallized boss 306 is provided on the outer support. Further, the interior of the ceramic ring substrate 302 is provided with metallized traces 309, and the metallized traces 309, electrically activated pads 303, and metallized bosses 306 correspond one-to-one. Each metallized boss 306 is electrically connected to its corresponding electrically activated pad 303 via a corresponding metallized trace 309. Specifically, each getter 4 has two ends connected to two metallized bosses 306, and the two metallized bosses 306 are connected to two electrically activated pads 303 via two metallized traces 309. By energizing the electrically activated pads 303, power is supplied to the getter 4 through the metallized bosses 306, thereby activating the getter 4.

[0035] Furthermore, the top surface of the ceramic ring substrate 302 is provided with an upper metallization layer 301 for hermetic welding with the window 1, and the bottom surface of the ceramic ring substrate 302 is provided with a lower metallization layer 305 for hermetic welding with the chip 6; the electro-activated pad 303 assembly is disposed on the top surface of the external support. To prevent solder overflow between the upper metallization layer 301 and the window 1 from flowing to the electro-activated pad 303 and causing a short circuit, a barrier structure is provided between the upper metallization layer 301 and the electro-activated pad 303 to prevent solder overflow between the window 1 and the upper metallization layer 301 from flowing to the electro-activated pad 303, thereby preventing a short circuit between the upper metallization layer 301 and the electro-activated pad 303 and further improving the yield of infrared chip packaging. In one implementation, the barrier structure is a stepped structure, with the top surface of the outer support being higher or lower than the top surface of the ceramic ring substrate 302, or the outer support having a groove or protrusion, and the electrically activated pad 303 being disposed on the groove or protrusion, thereby forming a stepped structure between the upper metallization layer 301 and the electrically activated pad 303, increasing the distance between the two, thereby preventing solder from overflowing to the electrically activated pad 303. In another implementation, the top surface of the external support is flush with the top surface of the ceramic ring substrate 302. The barrier structure is an isolation groove, isolation wall, solder barrier area or insulating slurry area set at the junction of the top surface of the external support and the top surface of the ceramic ring substrate 302. It is arranged along the length of the external support or in segments along the length of the external support, and the length of each segment completely covers the length range of the electrically activated pad 303 on one side. By setting the barrier structure, the solder between the ceramic ring substrate 302 and the window 1 cannot directly contact the electrically activated pad 303 when it melts at high temperature, thereby preventing solder overflow without reducing or increasing the height difference.

[0036] In this embodiment, a through-hole 310 is provided in the middle of the ceramic ring substrate 302. The cross-sectional profile of the through-hole 310 is a closed shape, which is formed by several convex curve segments smoothly connected end to end, or by several straight lines and several convex curve segments smoothly connected end to end. It has no sharp corners, eliminating corner diffraction and stress concentration areas, improving imaging contrast and signal-to-noise ratio, as well as the reliability of the packaging structure. In some embodiments, the closed shape is circular, which can be used for effective element arrays of all shapes, completely eliminating corner diffraction interference and ensuring uniform stress distribution. It also naturally matches the circular imaging ring of the optical lens, ensuring uniform illumination of all array pixels. Furthermore, the diameter of the circular closed shape is greater than the maximum straight-line distance between any two points on the outer periphery of the effective element array on the chip 6 in the horizontal plane. In other embodiments, the closed shape is elliptical, particularly suitable for rectangular effective element arrays with a large aspect ratio. Furthermore, the major axis of the elliptical closed shape is greater than the length of the long side of the rectangular effective element array, and the minor axis is greater than the length of the short side, further reducing the volume of the sealed cavity and lowering the getter load. In other embodiments, the closed shape is a rounded polygon, which can match the shape of the effective element array, thereby improving the space utilization of the light-transmitting aperture 310. Furthermore, the radius of the circle containing the rounded corners of the rounded polygon is greater than 1 / 5 of the length of the long side of the circumscribed rectangle of the rounded polygon to ensure a smooth transition. Furthermore, the inner wall of the light-transmitting aperture 310 is provided with multiple annular steps, and the aperture of the light-transmitting aperture 310 gradually decreases along the light incident direction, thereby forming an aperture stop, optimizing the uniformity of image illumination, suppressing stray light, and integrating optical beam limiting function. Preferably, the inner wall of the light-transmitting aperture 310 is coated with an matting coating to improve the stray light suppression effect.

[0037] This embodiment also provides a method for preparing the transition ring 3 for detector packaging as described in any of the above claims, comprising the following steps: S1. Prepare a green body of ceramic ring substrate 302, and prepare metallized bosses 306 on the internal steps of the green body; S2. The green body obtained in step S1 is co-fired at high temperature using the HTCC process, so that the metallized boss 306 and the ceramic ring substrate 302 are sintered into one piece. S3. Electrically connect the two ends of the getter 4 to the two metallized bosses 306 respectively, so that the main body part in the middle of the getter 4 is suspended.

[0038] Metallized bosses 306 are integrally formed on the ceramic ring substrate 302, eliminating the need for separate assembly interfaces. Under environmental stresses such as high and low temperature cycling, vibration, and impact, there will be no issues with loosening of contacts or interface peeling. The conductive path remains stable and reliable over the long term. Furthermore, it completely eliminates the independent metal gasket parts in traditional vacuum packaging structures, effectively solving multiple pain points of traditional structures such as cumbersome processes, poor assembly accuracy, low reliability, and space redundancy. At the same time, it suspends the main body of the getter 4 in the middle, significantly reducing the heat conduction area with the ceramic ring substrate 302, reducing heat loss during activation, and improving heat utilization. This allows the getter 4 to quickly reach and maintain the activation temperature stably, fundamentally avoiding problems such as insufficient activation and activation failure. It ensures long-term stability of the cavity vacuum, improves the overall performance and service life of the detector, and significantly reduces power supply and detector operating power consumption under the same activation temperature requirements, which is in line with the current development trend of low power consumption and miniaturization of electronic devices.

[0039] In step S1, an upper metallization layer 301, a lower metallization layer 305, and electrically activated pads 303 are simultaneously fabricated on the top surface, bottom surface, and outer support of the green substrate. In this embodiment, the metallization boss 306 is fabricated simultaneously with the upper metallization layer 301 on the top surface of the ceramic ring substrate 302, the lower metallization layer 305 on the bottom surface, and the electrically activated pads 303 on the outer support. This process is fully compatible with existing transition ring 3 processing technology, requires no additional dedicated large-scale equipment, significantly shortens the packaging process, adapts to wafer-level mass production, significantly improves production efficiency, and reduces overall manufacturing costs.

[0040] In step S3, the getter 4 can be a sheet-shaped getter, and the two ends of the sheet-shaped getter are respectively connected to the functional upper layer of the two metallized bosses 306 by welding; the getter 4 can also be a thin film getter, which is prepared by selective deposition process, and the two ends of the getter 4 are electrically connected to the two metallized bosses 306 respectively.

[0041] This embodiment also provides a detector packaging structure, including a chip 6 and a window 1, and further including a transition ring 3 for detector packaging as described in any of the above embodiments. The top and bottom surfaces of the ceramic ring substrate 302 are respectively welded to the window 1 and the chip 6.

[0042] Specifically, an upper metallization layer 301 and a lower metallization layer 305 are respectively disposed on the top and bottom surfaces of the ceramic ring substrate 302. The upper metallization layer 301 is welded to the window 1 through a first connecting layer 2, and the lower metallization layer 305 is welded to the chip 6 through a second connecting layer 5. Figure 12As shown, the detector packaging structure includes a window 1, a first connecting layer 2, a transition ring 3, a second connecting layer 5, and a chip 6 stacked sequentially from top to bottom. After the transition ring 3 is prepared, the window 1 is hermetically welded to the upper metallization layer 301 on the top surface of the transition ring 3 through the first connecting layer 2. Then, the lower metallization layer 305 on the bottom surface of the transition ring 3 is hermetically bonded to the welding area of ​​the chip 6 through the second connecting layer 5, thereby forming a sealed packaging cavity.

[0043] The detector packaging transition ring 3 and detector packaging structure of this embodiment are suitable for wafer-level packaging, especially for wafer-level packaging of infrared detectors. Simultaneously, the transition ring 3 can increase the distance between the window 1 and the chip 6, reducing imaging dark spots caused by minute defects on the surface of the window 1 and dust particles.

[0044] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A transition ring for detector encapsulation, comprising a ceramic ring substrate, wherein the inner sidewall of the ceramic ring substrate has an inwardly protruding internal step, and at least one getter component is disposed on the internal step; characterized in that: The getter assembly includes a getter suspended above the internal step and two metallized bosses spaced apart on the internal step. The metallized bosses are integrally formed with the ceramic ring substrate, and the two ends of the getter are electrically connected to the two metallized bosses respectively.

2. The transition ring for detector packaging as described in claim 1, characterized in that: The metallized boss is a tungsten metallized boss or a molybdenum-manganese metallized boss.

3. The transition ring for detector packaging as described in claim 1, characterized in that: The top surface of the metallized boss is provided with a conductive plating layer, and the getter is electrically connected to the conductive plating layer.

4. The transition ring for detector packaging as described in claim 3, characterized in that: The conductive plating layer is any one of Ni / Au layer, Ni layer, Ni / Pd / Au layer, and Ni / Pd layer.

5. The transition ring for detector packaging as described in claim 1, characterized in that: A ceramic protrusion is provided on the internal step at the position corresponding to the metallized protrusion. The metallized protrusion is disposed on the corresponding ceramic protrusion, and the metallized protrusion, the ceramic protrusion and the ceramic ring substrate are integrally formed.

6. The transition ring for detector packaging as described in claim 5, characterized in that: The height of the ceramic protrusion is 100~300 μm.

7. The transition ring for detector packaging as described in claim 1, characterized in that: An avoidance groove is provided on the internal step corresponding to the area between the two metallized bosses.

8. The transition ring for detector packaging as described in claim 1, characterized in that: The area between the two metallized bosses on the internal step is hollowed out.

9. The transition ring for detector packaging as described in any one of claims 1-8, characterized in that: The getter is a sheet-shaped getter, and both ends of the sheet-shaped getter are respectively welded to two metallized bosses; or, the getter is a film-shaped getter, and both ends of the film-shaped getter are respectively deposited on two metallized bosses.

10. A detector packaging structure, comprising a chip and a window, characterized in that: It also includes a transition ring for detector packaging according to any one of claims 1-8, wherein the top and bottom surfaces of the ceramic ring substrate are respectively welded to the window and the chip.

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