Wafer laser debonding apparatus

Abstract

The utility model provides a kind of wafer laser debonding equipment, the equipment includes: laser sweep module, fixedly installed in the top of wafer laser debonding equipment, for laser sweep to wafer bonding body;Wafer bearing station, be set below laser sweep module, and the sweep center of laser sweep module and the center of wafer bearing station are aligned, for carrying and fixed wafer bonding body, and for carrying wafer after debonding;Slide glass placement station, be set in the side of wafer bearing station, for carrying slide glass after debonding;Slide glass separation module, be set in the same side of wafer bearing station and slide glass placement station, and wafer bearing station and slide glass placement station are all located on the movement path of slide glass separation module, for taking slide glass after debonding from wafer bearing station and place on slide glass placement station. Through the utility model, it is simple and efficient to operate, and can guarantee product yield.

Description

Technical Field

[0001] This utility model relates to the field of wafer debonding technology, and in particular to a wafer laser debonding device. Background Technology

[0002] Wafer debonding is a key step in semiconductor manufacturing and advanced packaging, primarily used to separate a temporarily bonded wafer from a carrier.

[0003] Currently, most high-capacity production lines on the market use fully automated laser debonding equipment. This type of equipment is highly automated, but it is expensive, has a complex structure, and is usually optimized for a single size or specific product, lacking flexibility.

[0004] However, in R&D experiments, small-batch multi-variety production, or product trial production, the requirements for wafer size and material (with or without iron rings) are diverse, and the output is low. In such scenarios, introducing costly fully automated equipment is uneconomical and has low cost-effectiveness. To address this need, the industry typically adopts a simplified operating method: first, a simple laser scanning stage is used to scan the bonded wafer to decompose the adhesive; then, operators manually use tools (such as scrapers) to pry the wafer off the carrier, achieving physical separation of the wafer from the carrier. This manual separation method has many drawbacks: first, it is cumbersome and inefficient; second, during manual prying, the stress applied to the wafer is uneven, which can easily lead to wafer breakage, cracks, or damage to internal circuits, causing irreversible losses and high product yield risks; finally, for bonded wafers with iron rings, positioning and fixing them is more difficult, further increasing the risks and difficulties of manual operation.

[0005] In view of this, it is necessary to improve the existing wafer debonding equipment to solve the above problems.

[0006] It should be noted that the above description of the background technology is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background technology section of this application. Utility Model Content

[0007] The purpose of this invention is to solve the problems of cumbersome operation, low separation efficiency, and high product yield risk in existing wafer debonding equipment.

[0008] To achieve the above objectives, this utility model provides a wafer laser debonding device for laser debonding wafer bonds, the wafer laser debonding device comprising:

[0009] A laser scanning module is fixedly installed on the top of the wafer laser debonding equipment and is used to perform laser scanning on the wafer bond;

[0010] A wafer carrier stage is disposed below the laser scanning module, with the scanning center of the laser scanning module aligned with the center of the wafer carrier stage. It is used to support and fix the wafer bond and to support the debonded wafer.

[0011] A wafer placement stage is disposed on one side of the wafer carrier stage and is used to hold the debonded wafer;

[0012] A wafer separation module is disposed on the same side of the wafer carrier stage and the wafer placement stage, and the wafer carrier stage and the wafer placement stage are both located on the movement path of the wafer separation module. It is used to pick up the debonded wafer from the wafer carrier stage and place it on the wafer placement stage.

[0013] As a further improvement of this utility model, the wafer carrier stage includes:

[0014] A wafer chuck is used to carry and fix the wafer bonding assembly, and the scanning center of the laser scanning module is aligned with the center of the wafer chuck.

[0015] A lifting mechanism is installed at the bottom of the wafer chuck, and a top pin is arranged around the edge of the wafer chuck at the top of the lifting mechanism. The top pin is used to support the wafer bonding assembly. The lifting mechanism is used to drive the wafer bonding assembly to descend and to drive the debonded wafer to rise.

[0016] As a further improvement of this utility model, the wafer carrier stage further includes:

[0017] The first Z-axis moving mechanism is connected to the wafer chuck and is used to drive the wafer chuck to move along the Z-axis to align with the laser focal length of the laser scanning module.

[0018] As a further improvement of this utility model, the wafer carrier stage further includes: an XY micro-motion platform, connected to the wafer chuck, used to drive the wafer chuck to move along the X and / or Y directions, so that the scanning center of the laser scanning module is aligned with the current scanning area of ​​the wafer bond;

[0019] or,

[0020] The laser scanning module includes a moving component and a laser emitter mounted on the bottom of the moving component. The laser emitter is used to emit laser light, and the moving component is used to drive the laser emitter to move along the X and / or Y directions, so that the center of the laser light is aligned with the current scanning area of ​​the wafer bonding assembly.

[0021] As a further improvement of this utility model, the top PIN includes: a wafer top PIN, the wafer top PIN is arranged in a ring at the edge of the wafer chuck, and the wafer top PIN and the lifting mechanism form a detachable assembly, and the wafer bonding body is composed of a wafer and a carrier.

[0022] As a further improvement of this utility model, the top PIN includes: a wafer top PIN and an iron ring top PIN. The wafer top PIN is disposed around the edge of the wafer chuck, and the iron ring top PIN is disposed around the edge of the wafer top PIN. Both the wafer top PIN and the iron ring top PIN are detachably assembled with the lifting mechanism. The wafer bonding body is composed of a wafer, a carrier, and an iron ring. Several electromagnets are arranged around the iron ring top PIN for attracting the iron ring.

[0023] As a further improvement of this utility model, the wafer separation module includes:

[0024] The X-axis moving mechanism is laterally arranged on the same side of the wafer carrier stage and the wafer placement stage;

[0025] The second Z-axis moving mechanism is vertically mounted on the X-axis moving mechanism and is driven by the X-axis moving mechanism to move along the X direction;

[0026] The flipping mechanism is longitudinally mounted on the second Z-axis moving mechanism and is driven by the second Z-axis moving mechanism to move along the Z direction.

[0027] The suction cup assembly is installed at the output end of the flipping mechanism to fix the debonded substrate and is flipped by the flipping mechanism.

[0028] As a further improvement of this utility model, the wafer chuck is made of SiC porous material and the wafer chuck and the wafer carrier form a detachable connection.

[0029] As a further improvement of this utility model, the wafer laser debonding device further includes:

[0030] A rack is fitted around the laser scanning module, the wafer carrier stage, the wafer placement stage, and the wafer separation module. The laser scanning module is installed on the top inner side of the rack, and a platform is provided at the bottom inner side of the rack. The wafer carrier stage, the wafer placement stage, and the wafer separation module are installed on the platform.

[0031] The rack has a door on its side that connects the external space of the rack to the internal space of the rack.

[0032] As a further improvement of this utility model, the maximum laser scanning range of the laser beam scanning module is 320mm×320mm.

[0033] Compared with the prior art, the beneficial effects of this utility model are:

[0034] The wafer laser debonding equipment includes: a laser scanning module, a wafer carrier stage, a wafer placement stage, and a wafer separation module. The laser scanning module is fixedly mounted on top of the wafer laser debonding equipment and is used to perform laser scanning on the wafer bond. The wafer carrier stage is located below the laser scanning module, with the scanning center of the laser scanning module aligned with the center of the wafer carrier stage. It is used to support and fix the wafer bond and to hold the debonded wafer. The wafer placement stage is located on one side of the wafer carrier stage and is used to hold the debonded wafer. The wafer separation module is located on the same side as the wafer carrier stage and the wafer placement stage, and both the wafer carrier stage and the wafer placement stage are located on the movement path of the wafer separation module. It is used to remove the debonded wafer from the wafer carrier stage and place it on the wafer placement stage. During laser debonding of wafer bonds, the wafer bonds are manually placed on the wafer carrier stage. A laser scanning module then scans the wafer bonds to rapidly decompose the adhesive on the wafer bonds. After the laser scanning is complete, the wafer separation module moves above the wafer carrier stage to remove the debonded wafers from the wafer carrier stage and place them on the wafer placement stage. Thus, the debonded wafers are placed on the wafer carrier stage, and the debonded wafers are placed on the wafer placement stage, where they are then manually removed. Therefore, semi-automated laser debonding is achieved. Compared with existing wafer debonding equipment, there is no need for manual separation of wafers and carriers. The wafer bond is placed on the wafer carrier by a person, and the wafer and carrier are removed by a person. The operation is simple and efficient, and it can avoid wafer breakage, cracks or damage to internal circuits caused by manual prying. It further protects the wafer and ultimately solves the problems of cumbersome operation, low separation efficiency and high product yield risk of existing wafer debonding equipment. Attached Figure Description

[0035] Figure 1 A stereoscopic view of a wafer laser debonding device from one perspective;

[0036] Figure 2 A stereoscopic view of a wafer laser debonding device from another perspective;

[0037] Figure 3 Top view of the wafer carrier stage, wafer placement stage, and wafer separation module;

[0038] Figure 4 A three-dimensional view of the wafer carrier stage from one perspective;

[0039] Figure 5 A stereoscopic view of the rack door of the wafer laser debonding equipment is shown from another perspective, omitting the viewport.

[0040] Figure 6 is a perspective view of the wafer laser debonding apparatus from another perspective. DETAILED DESCRIPTION

[0041] The present utility model will be described in detail below with reference to the embodiments shown in the accompanying drawings. It should be noted that these embodiments are not intended to limit the present utility model, and all equivalent transformations or substitutions of functions, methods or structures made by those of ordinary skill in the art based on these embodiments shall fall within the protection scope of the present utility model.

[0042] It should be understood that in the present application, the orientation or positional relationships indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial" and the like are based on the orientation or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present technical solution and simplifying the description, and do not indicate or imply that the referred apparatus or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present technical solution.

[0043] It should be noted that in the present utility model, "transverse" refers to the direction along the X-axis, "longitudinal" refers to the direction along the Y-axis, and "vertical" refers to the direction along the Z-axis.

[0044] see Figures 1 to 6 as shown, the present utility model provides a specific embodiment of a wafer laser debonding apparatus 100. The wafer laser debonding apparatus 100 is used for performing laser debonding on a wafer bonded assembly (not shown) to separate the temporarily bonded wafer (not shown) and the carrier 70.

[0045] Specifically, see Figure 3 and Figure 5As shown, the wafer laser debonding equipment 100 includes: a laser scanning module 10, a wafer carrier stage 20, a wafer placement stage 30, and a wafer separation module 40. The laser scanning module 10 is fixedly mounted on the top of the wafer laser debonding equipment 100 and is used to perform laser scanning on the wafer bonded assembly. The wafer carrier stage 20 is disposed below the laser scanning module 10, and the scanning center of the laser scanning module 10 is aligned with the center of the wafer carrier stage 20. It is used to support and fix the wafer bonded assembly and to support the debonded wafer. The wafer placement stage 30 is disposed on one side of the wafer carrier stage 20 and is used to support the debonded wafer 70. The wafer separation module 40 is located on the same side of the wafer carrier stage 20 and the wafer placement stage 30, and both the wafer carrier stage 20 and the wafer placement stage 30 are located on the movement path of the wafer separation module 40. It is used to take the debonded wafer 70 from the wafer carrier stage 20 and place it on the wafer placement stage 30.

[0046] During laser debonding of the wafer bond, the wafer bond is manually placed on the wafer carrier stage 20. The laser scanning module 10 scans the wafer bond to rapidly decompose the adhesive on the wafer bond. After the laser scanning is completed, the wafer separation module 40 moves above the wafer carrier stage 20 to remove the debonded wafer 70 from the wafer carrier stage 20 and place it on the wafer placement stage 30. Thus, the debonded wafer is placed on the wafer carrier stage 20, and the debonded wafer 70 is placed on the wafer placement stage 30, and then manually removed.

[0047] Therefore, semi-automated laser debonding is achieved. Compared with existing wafer debonding equipment, there is no need to manually separate the wafer and the carrier 70. The wafer bond is placed on the wafer carrier stage 20 by the operator, and the wafer and the carrier 70 are removed by the operator. The operation is simple and efficient, and it can avoid wafer breakage, cracks or damage to internal circuits caused by manual prying. It further protects the wafer and ultimately solves the problems of cumbersome operation, low separation efficiency and high product yield risk of existing wafer debonding equipment.

[0048] It should be noted that the alignment of the scanning center of the laser scanning module 10 with the center of the wafer carrier stage 20 means that the central axis corresponding to the scanning center of the laser scanning module 10 and the central axis corresponding to the center of the wafer carrier stage 20 are the same axis.

[0049] Furthermore, in one implementation, the reference... Figure 1 and Figure 2As shown, the wafer laser debonding equipment 100 also includes a frame 50 disposed outside the laser scanning module 10, the wafer carrier stage 20, the wafer placement stage 30, and the wafer separation module 40. In other words, the laser scanning module 10, the wafer carrier stage 20, the wafer placement stage 30, and the wafer separation module 40 are all disposed inside the frame 50. The frame 50 can be regarded as the outer shell of the entire wafer laser debonding equipment 100, which not only protects the internal components (i.e., the laser scanning module 10, the wafer carrier stage 20, the wafer placement stage 30, and the wafer separation module 40), but also provides a sealed and clean space for laser debonding of the wafer bond.

[0050] A rack door 52 is provided on the side of the rack 50, connecting the external space of the rack 50 and the internal space of the rack 50. The rack door 52 can be used to manually place the wafer bonding assembly on the wafer carrier stage 20 and to manually remove the wafer and the wafer carrier 70.

[0051] Regarding the internal components of the rack 50 and the mounting positions of the rack 50, the laser scanning module 10 is mounted on the top inner side of the rack 50. The wafer carrier stage 20, the wafer placement stage 30, and the wafer separation module 40 are all located below the laser scanning module 10. A platform 51 is provided at the bottom inner side of the rack 50, on which the wafer carrier stage 20, the wafer placement stage 30, and the wafer separation module 40 can be mounted. The connection method between the laser scanning module 10 and the rack 50, and the mounting method between the wafer carrier stage 20, the wafer placement stage 30, the wafer separation module 40, and the platform 51, can be any method in the prior art, and this embodiment does not specifically limit them.

[0052] In one implementation, the reference Figure 5 and Figure 6 As shown, multiple casters 53 are mounted on the bottom of the frame 50 to facilitate the movement of the entire wafer laser debonding equipment 100. Preferably, at least four casters 53 are configured to ensure the stability of the entire wafer laser debonding equipment 100 during movement.

[0053] In one implementation, the reference Figure 5 and Figure 6 As shown, multiple support rods 54 are mounted on the bottom of the frame 50 to ensure the stability of the wafer laser debonding equipment 100 when it is stationary. Preferably, at least four support rods 54 are configured to further ensure the stability of the wafer laser debonding equipment 100 when it is stationary.

[0054] More preferably, the moving wheel 53 or the support rod 54 is a telescopic structure. When the wafer laser debonding equipment 100 needs to be moved, the wafer laser debonding equipment 100 is supported only by the moving wheel 53; when the wafer laser debonding equipment 100 remains stationary, the wafer laser debonding equipment 100 is supported only by the support rod 54.

[0055] In one implementation, the reference Figure 1 As shown, a control mechanism 60 is provided on the outer side of the frame 50, and the control mechanism 60 is electrically connected to the laser scanning module 10. The control mechanism 60 can display the parameters of laser scanning (such as laser scanning area and laser intensity), and can also adjust the parameters. For example, the control mechanism 60 can be a computer, etc.

[0056] In one implementation, the reference Figure 4 As shown, the wafer carrier stage 20 includes a wafer chuck 21 and a lifting mechanism 22. The wafer chuck 21 is used to carry and fix the wafer bond, and the scanning center of the laser scanning module 10 is aligned with the center of the wafer chuck 21. The lifting mechanism 22 is mounted on the bottom of the wafer chuck 21, and a top pin is arranged around the edge of the wafer chuck 21 at the top of the lifting mechanism 22. The top pin is used to carry the wafer bond, and the lifting mechanism 22 is used to lower the wafer bond and to raise the debonded wafer.

[0057] In the specific implementation process, the lifting mechanism 22 rises, and the operator places the wafer bonding assembly on the top pin contained in the lifting mechanism 22. The lifting mechanism 22 drives the wafer bonding assembly to descend, so that the wafer bonding assembly carried on the top pin comes into contact with the wafer chuck 21. The wafer chuck 21 establishes a vacuum to adsorb the wafer bonding assembly. After the laser scanning is completed, the wafer chuck 21 breaks the vacuum, and the wafer separation module 40 takes the debonded wafer 70 from the wafer carrier stage 20 and places it on the wafer placement stage 30. The lifting mechanism 22 drives the debonded wafer to rise, so that the operator can remove the wafer and the wafer 70.

[0058] Preferably, the wafer chuck 21 is made of SiC porous material, and the wafer chuck 21 and the wafer carrier stage 20 form a detachable connection, so that wafer chuck 21 of different sizes can be replaced according to the size of the wafer.

[0059] In one implementation, the reference Figure 4 As shown, the wafer carrier stage 20 also includes a first Z-axis moving mechanism 23. The first Z-axis moving mechanism 23 is connected to the wafer chuck 21 and is used to drive the wafer chuck 21 to move along the Z-axis to align with the laser focal length of the laser scanning module 10.

[0060] Furthermore, the first Z-axis moving mechanism 23 is located on the bottom side of the wafer chuck 21 and connected to the wafer chuck 21. At the same time, the bottom of the first Z-axis moving mechanism 23 is fixedly connected to the stage 51, which serves to support the entire wafer carrier stage 20.

[0061] In one embodiment, during laser scanning, the scanning center of the laser scanning module 10 is aligned with the current scanning area of ​​the wafer bonding assembly by moving the wafer bonding assembly. (See reference...) Figure 4 As shown, the wafer carrier stage 20 also includes an XY micro-motion platform 24. The XY micro-motion platform 24 is connected to the wafer chuck 21 and is used to drive the wafer chuck 21 to move along the X and / or Y directions, thereby driving the wafer bonding assembly to move, so that the scanning center of the laser scanning module 10 is aligned with the current scanning area of ​​the wafer bonding assembly.

[0062] Furthermore, the XY micro-motion platform 24 is installed at the bottom of the wafer chuck 21, and the wafer chuck 21 and the XY micro-motion platform 24 are connected. The XY micro-motion platform 24 is also connected to the first Z-axis moving mechanism 23. Thus, the first Z-axis moving mechanism 23 can simultaneously drive the wafer chuck 21 and the XY micro-motion platform 24 to move along the Z-direction, while the XY micro-motion platform 24 only drives the wafer chuck 21 to move along the X-direction and / or the Y-direction.

[0063] Preferably, the first Z-axis moving mechanism 23 and the XY micro-motion platform 24 are both electrically connected to the control mechanism 60 and are controlled by the control mechanism 60.

[0064] In one embodiment, during laser scanning, the scanning center of the laser scanning module 10 is aligned with the current scanning area of ​​the wafer bond by moving the laser scanning module 10. (See reference...) Figure 5 As shown, the laser scanning module 10 includes a moving component 11 and a laser emitter 12 mounted on the bottom of the moving component 11. The laser emitter 12 emits laser light, and the moving component 11 drives the laser emitter 12 to move along the X and / or Y directions, aligning the scanning center of the laser scanning module 10 with the current scanning area of ​​the wafer bonding assembly. Preferably, the maximum laser scanning range of the laser scanning module 10 is 320mm × 320mm.

[0065] In one embodiment, the top PIN includes a wafer top PIN 221. The wafer top PIN 221 is arranged around the edge of the wafer chuck 21, and the wafer top PIN 221 and the lifting mechanism 22 form a detachable assembly; the wafer bonding assembly is composed of a wafer and a carrier 70. Thus, laser debonding can be performed on wafer bonding assemblies without the iron ring, and by adapting the wafer top PIN 221 to different wafer sizes, laser debonding of 4-12 inch wafers can be performed by replacing a small number of parts (i.e., the wafer top PIN 221).

[0066] In another embodiment, the top PIN includes a wafer top PIN 221 and a metal ring top PIN 222. The wafer top PIN 221 is positioned around the edge of the wafer chuck 21, and the metal ring top PIN 222 is positioned around the edge of the wafer top PIN 221. Both the wafer top PIN 221 and the metal ring top PIN 222 are detachably assembled with the lifting mechanism 22. The wafer bonding assembly consists of a wafer, a carrier 70, and a metal ring (not shown). Several electromagnets 211 are arranged around the wafer top PIN 221 for attracting the metal ring. Thus, laser debonding can be performed on wafer bonding assemblies with metal rings. Furthermore, by adapting the wafer top PIN 221 and the metal ring top PIN 222 to different wafer sizes, laser debonding of 4-12 inch wafers can be performed by replacing only a few parts (i.e., the wafer top PIN 221 and the metal ring top PIN 222).

[0067] In one implementation, the reference Figure 3 As shown, the wafer separation module 40 includes a suction cup assembly 41, a flipping mechanism 42, a second Z-axis moving mechanism 43, and an X-axis moving mechanism 44. The X-axis moving mechanism 44 is laterally positioned on the same side of the wafer carrier stage 20 and the wafer placement stage 30, and is fixedly mounted on the placement stage 51, serving to support the entire wafer separation module 40. The second Z-axis moving mechanism 43 is vertically mounted on the X-axis moving mechanism 44 and is driven by the X-axis moving mechanism 44 to move along the X-axis. The flipping mechanism 42 is longitudinally mounted on the second Z-axis moving mechanism 43 and is driven by the second Z-axis moving mechanism 43 to move along the Z-axis. The suction cup assembly 41 is mounted on the output end 421 of the flipping mechanism 42, used to fix the debonded wafer 70, and is flipped by the flipping mechanism 42.

[0068] In the specific implementation process, the X-axis moving mechanism 44 drives the second Z-axis moving mechanism 43 to move along the X direction towards the wafer carrier stage 20, thereby driving the suction cup assembly 41 and the flipping mechanism 42 to move along the X direction towards the wafer carrier stage 20, so that the suction cup assembly 41 moves above the wafer suction cup 21; the second Z-axis moving mechanism 43 drives the flipping mechanism 42 to move downward along the Z direction, thereby driving the suction cup assembly 41 to move downward along the Z direction, so that the suction cup assembly 41 contacts the debonded wafer 70; the suction cup assembly 41 establishes a vacuum to adsorb the debonded wafer 70; the second Z-axis moving mechanism 43 drives the flipping mechanism 42 to move upward along the Z direction, thereby driving the suction cup assembly 41 and the debonded wafer 70 to move upward along the Z direction; the X-axis moving mechanism 44 drives the second Z-axis moving mechanism 43 to move along the X direction towards the wafer placement stage 3. The first Z-axis movement mechanism 43 moves the suction cup assembly 41, the flipping mechanism 42, and the debonded substrate 70 in the X direction toward the substrate placement stage 30, so that the suction cup assembly 41 and the debonded substrate 70 move above the substrate placement stage 30; the flipping mechanism 42 flips the suction cup assembly 41 (preferably by 180 degrees) to flip the debonded substrate 70 (i.e., by 180 degrees); the second Z-axis movement mechanism 43 moves the flipping mechanism 42 downward in the Z direction to move the suction cup assembly 41 and the debonded substrate 70 downward in the Z direction, so that the edge of the debonded substrate 70 contacts the substrate placement stage 30 (i.e., the debonded substrate 70 is supported by the substrate placement stage 30); the suction cup assembly 41 breaks the vacuum to place the debonded substrate 70 on the substrate placement stage 30.

[0069] The detailed descriptions listed above are merely specific descriptions of feasible implementations of this utility model, and are not intended to limit the scope of protection of this utility model. All equivalent implementations or modifications made without departing from the spirit of this utility model should be included within the scope of protection of this utility model.

[0070] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A wafer laser debonding device for laser debonding wafer bonds, characterized in that, The wafer laser debonding equipment includes: A laser scanning module is fixedly installed on the top of the wafer laser debonding equipment and is used to perform laser scanning on the wafer bond; A wafer carrier stage is disposed below the laser scanning module, with the scanning center of the laser scanning module aligned with the center of the wafer carrier stage. It is used to support and fix the wafer bond and to support the debonded wafer. A wafer placement stage is disposed on one side of the wafer carrier stage and is used to hold the debonded wafer; A wafer separation module is disposed on the same side of the wafer carrier stage and the wafer placement stage, and the wafer carrier stage and the wafer placement stage are both located on the movement path of the wafer separation module. It is used to pick up the debonded wafer from the wafer carrier stage and place it on the wafer placement stage.

2. The wafer laser debonding equipment according to claim 1, characterized in that, The wafer carrier stage includes: A wafer chuck is used to carry and fix the wafer bonding assembly, and the scanning center of the laser scanning module is aligned with the center of the wafer chuck. A lifting mechanism is installed at the bottom of the wafer chuck, and a top pin is arranged around the edge of the wafer chuck at the top of the lifting mechanism. The top pin is used to support the wafer bonding assembly. The lifting mechanism is used to drive the wafer bonding assembly to descend and to drive the debonded wafer to rise.

3. The wafer laser debonding equipment according to claim 2, characterized in that, The wafer carrier stage also includes: The first Z-axis moving mechanism is connected to the wafer chuck and is used to drive the wafer chuck to move along the Z-axis to align with the laser focal length of the laser scanning module.

4. The wafer laser debonding equipment according to claim 2, characterized in that, The wafer carrier stage further includes an XY micro-motion platform, which is connected to the wafer chuck and is used to drive the wafer chuck to move along the X and / or Y directions, so that the scanning center of the laser scanning module is aligned with the current scanning area of ​​the wafer bond; or, The laser scanning module includes a moving component and a laser emitter mounted on the bottom of the moving component. The laser emitter is used to emit laser light, and the moving component is used to drive the laser emitter to move along the X and / or Y directions, so that the center of the laser light is aligned with the current scanning area of ​​the wafer bonding assembly.

5. The wafer laser debonding equipment according to claim 2, characterized in that, The top PIN includes a wafer top PIN, which is arranged in a ring at the edge of the wafer chuck, and the wafer top PIN and the lifting mechanism form a detachable assembly. The wafer bonding assembly is composed of a wafer and a carrier.

6. The wafer laser debonding equipment according to claim 2, characterized in that, The top pin includes a wafer top pin and an iron ring top pin. The wafer top pin is located at the edge of the wafer chuck, and the iron ring top pin is located at the edge of the wafer top pin. Both the wafer top pin and the iron ring top pin are detachably assembled with the lifting mechanism. The wafer bonding body is composed of a wafer, a carrier, and an iron ring. Several electromagnets are arranged around the iron ring top pin for attracting the iron ring.

7. The wafer laser debonding equipment according to claim 1, characterized in that, The wafer separation module includes: The X-axis moving mechanism is laterally arranged on the same side of the wafer carrier stage and the wafer placement stage; The second Z-axis moving mechanism is vertically mounted on the X-axis moving mechanism and is driven by the X-axis moving mechanism to move along the X direction; The flipping mechanism is longitudinally mounted on the second Z-axis moving mechanism and is driven by the second Z-axis moving mechanism to move along the Z direction. The suction cup assembly is installed at the output end of the flipping mechanism to fix the debonded substrate and is flipped by the flipping mechanism.

8. The wafer laser debonding equipment according to claim 2, characterized in that, The wafer chuck is made of porous SiC material and the wafer chuck and the wafer carrier form a detachable connection.

9. The wafer laser debonding equipment according to claim 1, characterized in that, The wafer laser debonding equipment also includes: A rack is fitted around the laser scanning module, the wafer carrier stage, the wafer placement stage, and the wafer separation module. The laser scanning module is installed on the top inner side of the rack, and a platform is provided at the bottom inner side of the rack. The wafer carrier stage, the wafer placement stage, and the wafer separation module are installed on the platform. The rack has a door on its side that connects the external space of the rack to the internal space of the rack.

10. The wafer laser debonding equipment according to claim 1, characterized in that, The maximum laser scanning range of the laser scanning module is 320mm×320mm.

Images