Film expanding device and wafer expanding apparatus
Patent Information
- Application Number
- CN202522173834.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-14
- Publication Date
- 2026-10-27
- Estimated Expiration
- 2035-10-14
AI Technical Summary
[0003]然而,在对扩晶膜进行加热使其收缩的过程中,扩晶膜受热易产生一些化学气体,这些化学气体可能沉积并附着于晶粒表面,形成难以去除的污染层,影响晶粒的电气性能及后续的封装可靠性,不利于对产品良品率的提升
在本申请中,通过吹风组件中的多个吹气口朝承载面吹保护性气体,以使吹到晶圆表面的气流能够沿由晶圆的中心指向晶圆的边缘的方向流动,可使得因加热扩晶膜所产生的化学气体能够随着气流向远离晶圆的方向流动,有效防止了化学气体流向晶圆表面,从而防止了化学气体沉积、附着于晶粒表面,避免了因化学气体附着并沉积于晶粒表面而导致晶粒的电气性能及后续的封装可靠性不佳,提高了良品率。
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Figure CN224910075U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of wafer processing equipment technology, and in particular to a film expansion device and wafer expansion equipment. Background Technology
[0002] In the manufacturing process of semiconductor devices, wafers are typically diced into multiple individual dies. Common dicing methods include mechanical dicing (such as using diamond blades) and laser dicing (such as laser stealth dicing). After dicing the wafer, the die-expanding film attached to the back of the wafer is usually stretched to achieve the film expansion operation. The stretched die-expanding film can then be heated to shrink and re-tension it.
[0003] However, during the process of heating the die-expanding film to shrink it, the film is prone to generating some chemical gases. These chemical gases may deposit and adhere to the surface of the die, forming a contamination layer that is difficult to remove, affecting the electrical performance of the die and the reliability of subsequent packaging, which is not conducive to improving the product yield. Utility Model Content
[0004] This application discloses a film expansion device and a wafer expansion equipment, which can effectively prevent the chemical gases generated by heating the expanded film from depositing and adhering to the surface of the die, thereby improving the electrical performance of the die and the reliability of subsequent die packaging, and thus improving the product yield.
[0005] To achieve the above objectives, in a first aspect, embodiments of this application disclose a film expansion device, comprising: A wafer carrier stage has a carrier surface for supporting a wafer with a die-spreading film attached. A die-expanding film holder is disposed around the wafer carrier stage, and the die-expanding film holder is used to support the edge of the die-expanding film; A heating assembly for heating the die-expanding film located between the outer peripheral wall of the wafer and the die-expanding film holder; A blower assembly includes a main body and a plurality of air inlets disposed on the main body. The main body is opposite to and spaced apart from the bearing surface. The air outlet of each air inlet is oriented toward the bearing surface, and the extension direction of each air inlet has an angle with the normal, so that the airflow from each air inlet blows toward the edge of the wafer.
[0006] Optionally, the included angle is A, 0°<A≤arctan((R1-R2) / H), where H is the distance between the air outlet end of the air blowing port and the bearing surface, R1 is the radius of the wafer, and R2 is the distance between the air outlet end of the air blowing port and the normal line passing through the center of the wafer.
[0007] Optionally, the included angle is A, where 30°≤A≤65°.
[0008] Optionally, the blower assembly further includes an air inlet and an air guide channel group disposed on the main body, wherein the air inlet is used to connect to an air source, and the air guide channel group connects the air inlet and the blower port.
[0009] Optionally, the air guide channel group includes a first air guide channel and a plurality of second air guide channels. The first air guide channel is arranged around the air inlet, and the plurality of second air guide channels are connected between the air inlet and the first air guide channel and are arranged at intervals around the air inlet. The plurality of air outlets are all connected to the first air guide channel.
[0010] Optionally, the first air guide channel has a sidewall facing the air inlet, and the air outlet of the second air guide channel is disposed opposite to the sidewall along its air guiding direction.
[0011] Optionally, the heating assembly includes a heating element support plate, the main body is disposed on the side of the heating element support plate facing the support surface, the main body has a first surface facing the heating element support plate, and the air inlet is disposed on the first surface; The first air guide channel includes a first annular groove disposed on the first surface, and the second air guide channel includes a second groove disposed on the first surface. The second groove extends along the direction of the air inlet pointing to the first annular groove and connects the air inlet and the first annular groove. The air inlet end of the air blowing port penetrates the bottom wall of the first annular groove.
[0012] Optionally, the main body also has a second surface opposite to the first surface along the extension direction of the normal and a side surface connecting the first surface and the second surface, wherein the air outlet end of the air outlet passes through the side surface and is disposed closer to the second surface than the air inlet end of the air outlet.
[0013] Optionally, a sealing element is provided between the first surface and the heating element support plate, the sealing element being disposed around the side of the first annular groove away from the air inlet.
[0014] Optionally, the blower assembly further includes a rotary joint, which includes a housing and an air guide tube rotatably connected within the housing. The housing is fixedly connected to the heating assembly, and the air guide tube is used to connect the air source and the blower port.
[0015] Secondly, embodiments of this application also disclose a wafer expansion device, including the film expansion apparatus described in any one of the first aspects.
[0016] Compared with the prior art, this application has at least the following beneficial effects: In this application, protective gas is blown toward the bearing surface through multiple air outlets in the blowing assembly, so that the airflow blowing onto the wafer surface can flow in the direction from the center of the wafer to the edge of the wafer. This allows the chemical gas generated by heating the die-expanding film to flow away from the wafer with the airflow, effectively preventing the chemical gas from flowing to the wafer surface. This prevents the chemical gas from depositing and adhering to the die surface, avoiding poor electrical performance of the die and subsequent packaging reliability caused by the chemical gas adhering and depositing on the die surface, and improving the yield. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a perspective view of a wafer, a die-extending film, and a wafer frame assembly provided in an embodiment of this application; Figure 2 This is a perspective view of a film expander provided in an embodiment of this application; Figure 3 This is a top view of a combination of a heating component and a blower component provided in an embodiment of this application; Figure 4 This is a cross-sectional view of a film expanding machine provided in an embodiment of this application; Figure 5 yes Figure 4 Enlarged view of position B in the middle; Figure 6 This is a top view of a main body provided in an embodiment of this application; Figure 7 This is a cross-sectional view of the main body provided in an embodiment of this application.
[0019] Explanation of reference numerals in the attached figures: 1-Wafer support stage; 11-Support surface; 2-Expanding film fixing component; 21-Expanding film bearing surface; 22-Wafer frame; 23-Fixing frame; 3-Gap; 4-Heating component; 41-Heating element support plate; 5-Blower assembly; 51-Main body; 511-First surface; 512-Second surface; 513-Side surface; 52-Air outlet; 53-Air inlet; 54-Air guide channel assembly; 541-First air guide channel; 5411-Side wall; 542-Second air guide channel; 55-Rotary joint; 6-Seals; 10-Expanding film device; 20-Wafer; 30-grain size; 40-Diffusive film; 50 - Gas source. Detailed Implementation
[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0021] In this invention, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this invention and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.
[0022] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances.
[0023] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this utility model based on the specific circumstances.
[0024] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.
[0025] In the manufacturing process of semiconductor devices, wafers are typically divided into multiple individual dies. Common dicing methods include mechanical dicing (such as using diamond blades) and laser dicing (such as laser stealth dicing).
[0026] After wafer dicing, a die-expanding film typically needs to be attached to the back of the wafer for die expansion. By stretching the die-expanding film, tension is applied to the wafer, causing it to break along the dicing point, thus separating the dies. The dicing point can be a cutting groove from mechanical cutting or a modified layer formed inside the wafer by laser stealth dicing. However, the die-expanding film deforms after stretching, causing it to loosen and lose the desired chip spacing. Chips attached to the die-expanding film are prone to colliding, resulting in defects such as chipping and scratches. Therefore, the loosened die-expanding film needs to be heated to shrink and restore its taut state.
[0027] To overcome this problem, related technologies typically employ heating the expanded film, utilizing its heat-shrinkage properties to restore its taut state. For example, the expanded film can be heated by hot air, infrared radiation, or a heating plate, causing it to shrink and re-tension. However, the inventors discovered a significant drawback in this heat-shrinkage process: many expanded films (such as PVC (Polyvinylchloride) films, polyolefin films, or UV (Ultraviolet curing) films with pressure-sensitive adhesives) may decompose or release low-molecular-weight organic compounds and generate chemical gases when heated. These chemical gases may deposit and adhere to the surface of the grains, forming a difficult-to-remove contamination layer, affecting the electrical properties of the grains and the reliability of subsequent packaging, thus hindering yield improvement.
[0028] Based on this, embodiments of this application disclose a film expansion device and a wafer expansion equipment, which can effectively prevent the chemical gases generated by heating the expanded film from depositing and adhering to the surface of the die, thus helping to ensure the electrical performance of the die and the reliability of subsequent die packaging, thereby improving the product yield.
[0029] The technical solution of this application will be described in detail below with reference to specific embodiments and accompanying drawings.
[0030] This application provides a film expansion device, such as... Figures 1-5As shown, the assembly includes a wafer carrier stage 1, a die-expanding film holder 2, a heating assembly 4, and a blower assembly 5. The wafer carrier stage 1 has a carrier surface 11 for supporting a wafer 20 with a die-expanding film 40 attached, wherein the die-expanding film 40 directly contacts the carrier surface 11. The die-expanding film holder 2 surrounds the wafer carrier stage 1 and is used to fix the edge of the die-expanding film 40. The heating assembly 4 heats the die-expanding film 40 located between the outer peripheral wall of the wafer 20 and the die-expanding film holder 2. The blower assembly 5 includes a main body 51 and multiple air outlets 52 disposed on the main body 51. The main body 51 is opposite to and spaced apart from the carrier surface 11. The air outlets 52 face the carrier surface 11, and each air outlet 52 has an angle between its extension direction and the normal to the carrier surface 11 (e.g., ...). Figure 4 As shown in Figure A), so that the airflow from each air inlet 52 blows towards the edge of the wafer 20.
[0031] In this embodiment, the wafer carrier stage 1 has a carrier surface 11 for supporting the wafer 20 with the die expansion film 40 attached. The die expansion film fixing member 2 is arranged around the wafer carrier stage 1 and is used to fix the edge of the die expansion film 40. The die expansion film 40 can be stretched by controlling the wafer carrier stage 1 and the die expansion film fixing member 2 to move relative to each other along the extension direction of the normal. This realizes the die expansion operation of the wafer 20, which increases the gap between two adjacent dies 30, so as to facilitate subsequent handling and picking up of dies 30.
[0032] Heating the expansion film 40 located between the outer peripheral wall of the wafer 20 and the expansion film fixing member 2 by the heating component 4 can cause the expansion film 40 to shrink and tighten, effectively preventing the reduction of the spacing between two adjacent dies 30 due to the relaxation of the expansion film 40, which is conducive to improving the yield.
[0033] However, during the heating process of the die-expanding film 40, it may decompose or release low-molecular-weight organic compounds, generating chemical gases. These chemical gases may deposit and adhere to the surface of the die 30, forming a contamination layer that is difficult to remove, affecting the electrical performance of the die 30 and the reliability of subsequent packaging, which is detrimental to improving the yield rate.
[0034] Based on this, the film expansion device 10 of this application also includes a blowing assembly 5. The main body 51 of the blowing assembly 5 is positioned opposite and spaced apart from the bearing surface 11. The main body 51 has multiple air outlets 52, the air outlets of which are directed toward the bearing surface 11. Each air outlet 52 has an angle between its extension direction and the normal of the bearing surface 11, so that the airflow from each air outlet 52 blows toward the edge of the wafer 20. This allows the airflow blowing onto the wafer 20 on the bearing surface 11 to flow in a direction from the center of the wafer 20 toward the edge of the wafer 20. This allows the chemical gas generated by heating the film expansion film 40 to flow away from the wafer 20 (i.e., the bearing surface 11) with the airflow, effectively preventing the chemical gas from flowing toward the die 30 and preventing the chemical gas from depositing and adhering to the surface of the die 30 on the bearing surface 11. This avoids the electrical performance of the die 30 and the reliability of subsequent packaging caused by the chemical gas adhering and depositing on the surface of the die 30, and further improves the yield.
[0035] Among them, multiple air blowing ports 52 on the main body 51 can be arranged around the normal line passing through the center of the wafer 20 (e.g. Figure 2 The setting (as shown by the dashed line x) allows the airflow in each region to flow towards the edge of the wafer 20, thus preventing the dies 30 in each region from being adhered to by chemical gases. This is more conducive to improving the electrical performance of the dies 30 and the reliability of subsequent packaging, and further improves the yield.
[0036] The air outlet 52 is positioned facing the bearing surface 11 and can be positioned close to the edge of the bearing surface 11 relative to the air inlet 52, so that the airflow blown out by the air outlet 52 can flow toward the edge of the bearing surface 11.
[0037] The number of air inlets 52 can be two, three, or more, and is not limited here. For example, the number of air inlets 52 can be 78, which effectively reduces the probability of blind spots in the areas blown by two adjacent air inlets 52, thereby improving the effect of preventing chemical gases from adhering to the grains 30.
[0038] The air inlet 52 can be implemented in various ways. In one possible implementation, the air inlet 52 can be a hole-like structure. In another possible implementation, the air inlet 52 can also be a slit-like structure provided on the main body 51. There is no limitation here, as long as the airflow blowing onto the bearing surface 11 can flow in the direction of the edge of the supported wafer 20.
[0039] In addition, the gas blown through the air outlet 52 of the air blowing assembly 5 onto the wafer 20 located on the bearing surface 11 is a protective gas, such as dry air, nitrogen or other inert gas, which can be determined according to the actual working conditions and is not limited here.
[0040] In the above embodiment, when the air outlet of the air blower 52 is positioned towards the bearing surface 11, and the air outlet of the air blower 52 is closer to the edge of the bearing surface 11 than the air inlet of the air blower 52, the airflow from all the air blowers 52 flows in a direction from the center of the wafer 20 towards the edge region of the wafer 20, and then flows towards the heated die-expanding film 40. The airflow direction is stable and does not generate turbulence on the surface of the wafer 20, so that the chemical gases generated by the die-expanding film 40 during the heating process can stay away from all the grains 30. In addition, the grains 30 near the center of the wafer 20 can also be within the protection range of the airflow layer, and are also not contaminated by the aforementioned chemical gases.
[0041] During the wafer expansion operation, an expansion film 40 can be attached to the wafer 20, and the wafer 20 and wafer frame 22 are connected through the expansion film 40. Then, the wafer 20 with the expansion film 40 attached is placed on the wafer carrier stage 1, and the carrier surface 11 of the wafer carrier stage 1 contacts the expansion film 40 and supports the wafer 20. For example, the expansion film 40 and the wafer 20 can be fixed on the carrier surface 11 by vacuum adsorption. The peripheral area of the expansion film 40 is placed on the expansion film carrier surface 21 of the expansion film fixing component 2, and the edge of the expansion film 40 can be fixed on the expansion film carrier surface 21 by the fixing frame 23. For example, the edge of the expansion film 40 can be fixed on the expansion film carrier surface 21 by the expansion film fixing ring or other structures. Then, the carrier surface 11 can be moved relative to the wafer carrier stage 1 and the expansion film fixing component 2 along the extension direction of the normal. A height difference exists between the die-expanding film and the substrate 21, which stretches the die-expanding film 40. The dies 30 on the wafer 20 move with the stretched die-expanding film 40, thereby increasing the gap between two adjacent dies 30. Then, the die-expanding film 40 located between the outer peripheral wall of the wafer 20 and the die-expanding film fixing member 2 can be heated by the heating component 4, so that the die-expanding film 40 at this location shrinks and tightens, effectively preventing the gap between two adjacent dies 30 from shrinking. At the same time, air is blown onto the substrate 11 through the air outlet 52 in the air blowing component 5, so that the airflow blown onto the substrate 11 can flow towards the edge of the wafer 20, thereby driving the chemical gas generated by heating the die-expanding film 40 to flow away from the dies 30, thus effectively preventing the chemical gas from flowing to the dies 30 and depositing and adhering to the dies 30, effectively improving the yield.
[0042] As described above, the die expansion film fixing member 2 is arranged around the wafer carrier stage 1, and there is a gap 3 between it and the outer peripheral wall of the wafer carrier stage 1 to facilitate the die expansion operation.
[0043] The heating component 4 can be positioned opposite to the gap 3, which facilitates the heating component 4 in heating the expansion film 40 located between the outer peripheral wall of the wafer 20 and the expansion film fixing member 2. Of course, in some other embodiments, the heating component 4 may not be positioned opposite to the gap 3, as long as the heating component 4 can heat the expansion film 40 located between the outer peripheral wall of the wafer 20 and the expansion film fixing member 2, and there is no limitation here.
[0044] The extension direction of the air outlet 52 is at an angle to the normal of the bearing surface 11. The angle can be A, where 0° < A ≤ arctan((R1-R2) / H), where H is the distance between the air outlet end of the air outlet 52 and the bearing surface 11, R1 is the radius of the wafer 20, and R2 is the distance between the air outlet end of the air outlet 52 and the normal passing through the center of the wafer 20.
[0045] Therefore, the angle between the extension direction of the air blowing port 52 and the normal can be adjusted according to the size of the produced wafer 20, the distance between the air blowing port 52 and the bearing surface 11 in the main body 51, and the distance between the air outlet end of the air blowing port 52 and the normal passing through the center of the wafer 20. This adjusts the tilt angle of the air blowing port 52 relative to the normal, which facilitates the processing of the air blowing port 52.
[0046] Optionally, the included angle A can be 30° to 65°, i.e., 30°≤A≤65°. Thus, when the distance between the main body 51 and the bearing surface 11 is suitable, the air blowing port 52 can blow protective gas onto wafers 20 of multiple sizes, improving the applicability of the film expansion device 10.
[0047] The angle between the extension direction of the air outlet 52 and the normal can be 30°, 65°, or any angle between 30° and 65°, and is not limited here.
[0048] In addition, the main body 51 is rotatably configured so that when air is blown onto the bearing surface 11 through the air blowing port 52, the main body 51 can rotate to drive the multiple air blowing ports 52 to rotate around the rotation center line of the main body 51. This allows the air blowing ports 52 to blow air onto the bearing surface 11 around the rotation center line of the main body 51, so that the airflow around the bearing surface 11 can flow to the edge of the wafer 20. This makes it less likely for the chemical gases to adhere to and deposit on the surface of the grain 30, which is beneficial to improving the yield.
[0049] In some embodiments, such as Figure 4 As shown, the blower assembly 5 also includes an air inlet 53 and an air guide channel group 54 disposed on the main body 51. The air inlet 53 is used to connect to the air source 50, and the air guide channel group 54 is connected between the air inlet 53 and the air outlet 52.
[0050] Therefore, the gas flowing from the air inlet 53 to the air outlet 52 can be guided through the air guide channel, which makes it easier to control the flow rate of the gas blown out of the air outlet 52.
[0051] The air guide channel group 54 can be implemented in various ways. In one possible implementation, the air guide channel group 54 may include multiple air guide channels. The multiple air guide channels are arranged at intervals around the air inlet 53. That is, one end of the air guide channel is connected to the air inlet 53, and the other end is connected to the corresponding air blowing port 52. Thus, after the protective gas flowing out of the air source 50 flows into the air inlet 53, it can be diverted through multiple air guide channels to flow to multiple air blowing ports 52, so that the air volume and air speed of each air blowing port 52 can be basically the same, and the structure of the air guide channel group 54 can be relatively simple and easy to implement.
[0052] In another implementation of the air guide channel group 54, such as Figures 4-7 As shown, the air guide channel group 54 includes a first air guide channel 541 and a plurality of second air guide channels 542. The first air guide channel 541 is arranged around the air inlet 53. The plurality of second air guide channels 542 are connected between the air inlet 53 and the first air guide channel 541 and are arranged at intervals around the air inlet 53. The plurality of air outlets 52 are all connected to the first air guide channel 541.
[0053] Therefore, an air guiding chamber can be formed by the first air guiding channel 541 and multiple second air guiding channels 542. The gas flowing into the air guiding channel group 54 through the air inlet 53 can first be divided by multiple second air guiding channels 542, and then enter the first air guiding channel 541 for mixing. After passing through the first air guiding channel 541, it flows to multiple air blowing ports 52. This allows the position of the air blowing ports 52 to be unaffected by the second air guiding channels 542, as long as they are connected to the first air guiding channel 541. In other words, the number of air blowing ports 52 can be greater than the number of second air guiding channels 542, so that the area covered by the gas blown by the blowing assembly 5 can be larger and there are fewer blind spots. At the same time, it also makes the structure of the air guiding channel group 54 simpler and reduces costs.
[0054] The first air guide channel 541 can be an annular air guide channel, and the second air guide channel 542 can be a straight air guide channel. Both have relatively simple structures and are easy to implement.
[0055] Furthermore, the number of second air guide channels 542 can be two, four, eight, etc., and is not limited here. For example, when the main body 51 has a disc-shaped structure, the air inlet 53 can be located at the center of the main body 51, the first air guide channel 541 can be arranged around the center of the main body 51, the second air guide channel 542 can extend radially along the main body 51, and multiple second air guide channels 542 are located between the air inlet 53 and the first air guide channel 541, and the multiple second air guide channels 542 are arranged at intervals around the air inlet 53. One end of each of the multiple second air guide channels 542 is connected to the air inlet 53, and the other end is connected to the first air guide channel 541.
[0056] The number of air inlets 52 may be greater than the number of second air guide channels 542, or the same as the number of air guide channels, or the number of air inlets 52 may be less than the number of second air guide channels 542. No limitation is made here.
[0057] Optionally, such as Figures 5-7 As shown, the first air guide channel 541 has a sidewall 5411 facing the air inlet 53, and the air outlet of the second air guide channel 542 is arranged opposite to the sidewall 5411 along its air guiding direction.
[0058] Therefore, the direction of the gas flowing into the second air guide channel 542 can be changed by the side wall 5411 of the first air guide channel 541, so that the airflows entering the first air guide channel 541 can flow and mix along its side wall 5411, and then be blown out from multiple air outlets 52. This makes the flow rate and velocity of the gas blown out by the multiple air outlets 52 more uniform, which helps to improve the effect of preventing chemical gases from flowing to the crystal grains 30.
[0059] In addition, when the air outlet 52 is located in the extension direction of the second air guide channel 542, it can effectively prevent the amount and velocity of gas flowing out of the air outlet 52 at that location from being greater than the amount and velocity of gas flowing out of the air outlet 52 at other locations, which is beneficial to improving the effect of preventing chemical gases from flowing to the crystal grains 30.
[0060] Wherein, along the extension direction of the normal, the depth of the first air guide channel 541 can be the same as the depth of the second air guide channel 542, and the side of the first air guide channel 541 near the bearing surface 11 can be located in the same plane as the side of the second air guide channel 542 near the bearing surface 11; or, along the extension direction of the normal, the depth of the first air guide channel 541 is greater than the depth of the second air guide channel 542.
[0061] As mentioned above, the main body 51 is opposite to and spaced apart from the bearing surface 11. This can be because the film expansion device 10 also includes a base, and the main body 51 is disposed on the base, or the main body 51 is disposed on the heating component 4. There is no limitation on this.
[0062] Optionally, such as Figures 4-7 As shown, the heating assembly 4 includes a heating element support plate 41, a main body 51 disposed on the side of the heating element support plate 41 facing the support surface 11, the main body 51 having a first surface 511 facing the heating element support plate 41, and an air inlet 53 disposed on the first surface 511; the first air guide channel 541 includes a first annular groove disposed on the first surface 511, the second air guide channel 542 includes a second groove disposed on the first surface 511, the second groove extends along the direction of the air inlet 53 pointing to the first annular groove, and connects the air inlet 53 and the first annular groove, and the air inlet end of the air outlet 52 penetrates the bottom wall of the first annular groove.
[0063] Therefore, by providing a first annular groove and multiple second grooves on the side of the main body 51 facing the heating support plate, the first air guide channel 541 and multiple second air guide channels 542 can be manufactured, which is easy to process.
[0064] Furthermore, when the air outlet of the second air guide channel 542 is positioned opposite to the side wall 5411 of the first air guide channel 541 along its air guide direction, the air inlet of the air outlet 52 penetrates the bottom wall of the first annular groove. This effectively prevents the air inlet of the air outlet 52 from being opposite to the second air guide channel 542, and avoids the flow rate and velocity of the gas from the air outlet 52 near the air outlet of the second air guide channel 542 being much greater than the flow rate and velocity of the other air outlets 52. This ensures that the flow rate and velocity of the gas blown out by each air outlet 52 are basically the same, which is beneficial to improving the protection effect on the grains 30.
[0065] The main body 51 can be detachably mounted on the heating element support plate 41 to facilitate easy assembly and disassembly between the main body 51 and the heating element support plate 41. Specifically, it can be threadedly connected to the side of the heating element support plate 41 facing the support surface 11 via a threaded connection, or the main body 51 can be bonded to the side of the heating element support plate 41 facing the support surface 11, or the main body 51 can be snapped onto the side of the heating element support plate 41 facing the support surface 11; there are no limitations on this.
[0066] Of course, in other embodiments, the main body 51 may also be welded to the heating element support plate 41 to make the connection between the two firm, as long as the main body 51 can be fixed to the heating element support plate 41.
[0067] In addition, the heating support plate can be rotatably set relative to the wafer support stage 1 to drive the main body 51 to rotate.
[0068] Optionally, such as Figures 5-7As shown, the main body 51 also has a second surface 512 that is opposite to the first surface 511 along the extension direction of the normal and a side surface 513 that connects the first surface 511 and the second surface 512. The air outlet end of the air outlet 52 passes through the side surface 513 and is located closer to the second surface 512 than the air inlet end of the air outlet 52.
[0069] Therefore, the air inlet 52 can be inclined relative to the normal on the main body 51, and it can be easily manufactured. At the same time, the size of the main body 51 in the direction parallel to the bearing surface 11 can be smaller, reducing the space occupied by the main body.
[0070] In addition, such as Figure 5 As shown, a sealing element 6 is provided between the first surface 511 and the heating element support plate 41. The sealing element 6 is arranged around the side of the first annular groove away from the air inlet 53.
[0071] Therefore, the gap between the main body 51 and the heating element support plate 41 can be sealed by the sealing element 6 to prevent the protective gas from leaking from the gap between the main body 51 and the heating element support plate 41, thus avoiding waste caused by the leakage of protective gas.
[0072] The sealing element 6 may include a sealing ring, or it may include sealant, or it may include both a sealing ring and sealant. There is no limitation on this, as long as it can achieve the sealing between the main body 51 and the heating element support plate 41.
[0073] The air inlet 53 provided on the main body 51 described above can be connected to the air source 50 via a connector and connecting pipe. For example, Figure 5 As shown, the blower assembly 5 may also include a rotary joint 55, which includes a housing and an air guide tube rotatably connected within the housing. The housing is fixedly connected to the heating assembly 4, and the air guide tube is used to connect the air source 50 and the air outlet 52.
[0074] Therefore, the main body 51 can be connected to the pipeline through the rotary joint 55 to connect to the gas source 50 through the pipeline. When the main body 51 needs to be rotated, the pipeline connected between the gas source 50 and the main body 51 can be effectively prevented from twisting, thus preventing the protective gas from flowing from the gas source 50 to the main body 51 from being affected by the twisting of the pipeline.
[0075] When the heating assembly 4 includes a heating element support plate 41, the housing of the rotary joint 55 can be connected to the heating element support plate 41, and the air guide pipe can communicate with the air inlet 53 on the main body 51. Additionally, a vent hole can be provided on the heating element support plate 41, which can connect the air guide pipe and the air inlet 53. This makes the length of the air guide pipe in the rotary joint 55 less susceptible to the influence of the thickness of the heating element support plate 41.
[0076] This application also discloses a wafer expansion device, including the film expansion apparatus described in any of the above embodiments.
[0077] The film expansion device in this wafer expansion equipment is the same as the film expansion device in the above embodiments. Therefore, the film expansion device in the wafer expansion equipment has roughly the same technical effect as the film expansion device in the above embodiments. Since the film expansion device has been described in detail in the above embodiments, it will not be repeated here.
[0078] Optionally, the wafer expansion equipment also includes a gas extraction device for removing chemical gases generated by heating the expanded wafer 40.
[0079] The air extraction device may include an air pump, an air intake pipe, and an exhaust pipe. The air intake pipe and the exhaust pipe are connected. The air pump may be installed on the air intake pipe, and the air intake port of the air intake pipe may be set towards the film expansion device 10. When heating the expanded film 40, the air pump can be turned on to guide the gas around the film expansion device 10 from the air intake pipe to the exhaust pipe, so as to timely discharge the chemical gas generated by heating the expanded film 40. This effectively reduces the probability of the chemical gas generated by heating the expanded film 40 accumulating inside the equipment and flowing to the grains 30, and reduces the probability of chemical gas deposition and adhesion to the grains 30, which is conducive to improving the yield.
[0080] The exhaust pipe can be connected to a gas treatment device or a gas storage structure to treat the discharged chemical gases or temporarily store them for later centralized treatment before discharging clean gas. This avoids the chemical gases generated by heating the expansion film 40 being directly discharged into the atmosphere and causing air pollution, which is beneficial to environmental protection.
[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.
Claims
1. A film expansion device (10), characterized in that, include: The wafer carrier stage (1) has a carrier surface (11) for carrying a wafer (20) with a die-spreading film (40) attached. A die-expanding film fixing member (2) is arranged around the wafer carrier stage (1), and the die-expanding film fixing member (2) is used to fix the edge of the die-expanding film (40); Heating assembly (4), the heating assembly (4) is used to heat the expansion film (40) located between the outer peripheral wall of the wafer (20) and the expansion film fixing member (2); The blowing assembly (5) includes a main body (51) and a plurality of air outlets (52) disposed on the main body (51). The main body (51) is opposite to and spaced apart from the bearing surface (11). The air outlets of the air outlets (52) are directed toward the bearing surface (11), and the extension direction of each air outlet (52) has an angle with the normal of the bearing surface (11), so that the airflow blown out by each air outlet (52) blows toward the edge of the wafer (20).
2. The film expansion device (10) according to claim 1, characterized in that, The included angle is A, 0°<A≤arctan((R1-R2) / H), where H is the distance between the air outlet end of the air blowing port (52) and the bearing surface (11), R1 is the radius of the wafer (20), and R2 is the distance between the air outlet end of the air blowing port (52) and the normal line passing through the center of the wafer (20).
3. The film expansion device (10) according to claim 1, characterized in that, The included angle is A, where 30°≤A≤65°.
4. The film expansion device (10) according to claim 1, characterized in that, The blowing assembly (5) also includes an air inlet (53) and an air guide channel group (54) disposed on the main body (51). The air inlet (53) is used to connect to the air source (50), and the air guide channel group (54) is connected between the air inlet (53) and the blowing port (52).
5. The film expansion device (10) according to claim 4, characterized in that, The air guide channel group (54) includes a first air guide channel (541) and a plurality of second air guide channels (542). The first air guide channel (541) is arranged around the air inlet (53). The plurality of second air guide channels (542) are connected between the air inlet (53) and the first air guide channel (541) and are arranged at intervals around the air inlet (53). The plurality of air outlets (52) are all connected to the first air guide channel (541).
6. The film expansion device (10) according to claim 5, characterized in that, The first air guide channel (541) has a sidewall (5411) facing the air inlet (53), and the air outlet of the second air guide channel (542) is arranged opposite to the sidewall (5411) along its air guiding direction.
7. The film expansion device (10) according to claim 5, characterized in that, The heating assembly (4) includes a heating element support plate (41), the main body (51) is disposed on the side of the heating element support plate (41) facing the support surface (11), the main body (51) has a first surface (511) facing the heating element support plate (41), and the air inlet (53) is disposed on the first surface (511). The first air guide channel (541) includes a first annular groove disposed on the first surface (511), and the second air guide channel (542) includes a second groove disposed on the first surface (511). The second groove extends along the direction of the air inlet (53) pointing to the first annular groove and connects the air inlet and the first annular groove. The air inlet end of the air outlet (52) penetrates the bottom wall of the first annular groove.
8. The film expansion device (10) according to claim 7, characterized in that, The main body (51) also has a second surface (512) that is opposite to the first surface (511) along the extension direction of the normal and a side surface (513) connecting the first surface (511) and the second surface (512). The air outlet of the air outlet (52) passes through the side surface (513) and is located closer to the second surface (512) than the air inlet of the air outlet (52).
9. The film expansion device (10) according to claim 7, characterized in that, A sealing element (6) is provided between the first surface (511) and the heating element support plate (41), and the sealing element (6) is provided around the side of the first annular groove away from the air inlet (53).
10. The film expansion device (10) according to any one of claims 1-9, characterized in that, The blowing assembly (5) also includes a rotary joint (55), which includes a housing and an air guide pipe rotatably connected to the housing. The housing is fixedly connected to the heating assembly (4), and the air guide pipe is used to connect the air source (50) and the blowing port (52).
11. A wafer expansion device, characterized in that, Includes the film expansion device (10) according to any one of claims 1-10.