A gallium nitride power device and motor controller

Abstract

The application provides a gallium nitride power device and a motor controller, and relates to the technical field of power modules.The gallium nitride power device comprises a shell body, a heat dissipation substrate installed on the shell body, and a gallium nitride power assembly comprising a plurality of bridge arm mechanisms, wherein each bridge arm mechanism comprises an installation substrate and a plurality of gallium nitride power switching devices, the gallium nitride power switching devices are installed on the installation substrate, the installation substrate is installed on the heat dissipation substrate, the gallium nitride power switching device comprises a plurality of gallium nitride power chips connected in parallel, and the gallium nitride power chips are installed on the installation substrate through silver sintering welding.The gallium nitride power device can achieve the technical effects of reducing the device volume and improving the power density.

Description

Technical Field

[0001] This application relates to the field of power module technology, and more specifically, to a gallium nitride power device and a motor controller. Background Technology

[0002] Currently, the most widely used inverter in the electric drive field is the Si-based IGBT (Insulated-Gate Bipolar Transistor) inverter, which converts DC to AC. IGBT technology has been in mass production for a long time, has low unit power cost, and possesses good thermal stability and reliability. However, due to the minority carrier storage effect of IGBTs, their switching speed is slow (turn-off time of hundreds of nanoseconds), and switching losses (turn-on / turn-off losses) increase sharply at high frequencies, leading to a decrease in the overall efficiency of the inverter. Moreover, the IGBT chip structure is complex, resulting in large size and low power density. Utility Model Content

[0003] The purpose of this application is to provide a gallium nitride power device and motor controller that can achieve the technical effects of reducing device size and increasing power density.

[0004] In a first aspect, this application provides a gallium nitride power device, comprising: outer casing; A heat dissipation substrate, which is mounted on the outer casing; A gallium nitride (GaN) power component includes multiple bridge arm mechanisms, each including a mounting substrate and multiple GaN power switching devices. The GaN power switching devices are mounted on the mounting substrate, which is mounted on a heat dissipation substrate. Each GaN power switching device includes multiple GaN power chips connected in parallel, and the GaN power chips are mounted on the mounting substrate by silver sintering.

[0005] In the above implementation process, gallium nitride (GaN) power switching devices are applied to the power module of the motor controller, that is, the inverter function is realized through GaN power switching devices. The material characteristics of GaN power switching devices solve the bottleneck of traditional silicon devices in high-frequency, high-voltage, and high-efficiency scenarios. Among them, GaN power switching devices have a high bandgap and a high breakdown electric field, which allows the same high voltage to be achieved with a thinner drift region, avoiding the increase in resistance caused by thick layers, and realizing chip miniaturization. Its electron mobility is higher than that of silicon-based IGBTs, which makes the turn-on speed of GaN power switching devices faster and the loss lower. Thus, this GaN power device can achieve the technical effects of reducing device size and increasing power density.

[0006] Furthermore, the gallium nitride power switching device also includes a drive line, through which the plurality of gallium nitride power chips are bonded to the drive connection point of the mounting substrate.

[0007] In the above implementation process, the gate of the gallium nitride power chip and the drive connection point of the mounting substrate are connected by drive lines respectively, so that control signals are transmitted to the gallium nitride power chip through the drive lines, and the gate of the gallium nitride power chip can be directly controlled.

[0008] Furthermore, the gallium nitride power switch device also includes a first power line, and the power connection point of the gallium nitride power switch device is connected to the power connection point of the mounting substrate through the first power line.

[0009] In the above implementation process, the power connection points of the gallium nitride power switch device and the power connection points of the mounting substrate are connected by the first power line, which undertakes the main task of energy transmission.

[0010] Furthermore, the gallium nitride power switch device also includes a second power line, which is matched with the first power line, and the power connection point of the gallium nitride power switch device is connected to the power connection point of the mounting substrate through the second power line.

[0011] In the above implementation process, two power connection lines are used: a first power line and a second power line, which connect the power connection point of the gallium nitride power switch device and the power connection point of the mounting substrate, respectively. This avoids the limitations of chip manufacturing process and the narrowness of chip surface pads, and improves the current carrying capacity through the two power connection lines.

[0012] Furthermore, the gallium nitride power component also includes a power terminal, which is mounted on the mounting substrate and connected to the source or drain of the gallium nitride power chip.

[0013] In the above implementation process, external devices such as input power supplies and motors are connected to the source or drain of the gallium nitride power chip through power terminals, that is, the input and output of main power energy are undertaken through the power terminals.

[0014] Furthermore, the gallium nitride power component also includes a signal terminal, which is mounted on the mounting substrate and connected to the gate of the gallium nitride power chip.

[0015] In the above implementation process, control signals, status feedback and power are transmitted to the gallium nitride power switching device through the signal terminal, that is, the on and off of the gallium nitride power chip can be controlled through the signal terminal.

[0016] Furthermore, the mounting substrate is a ceramic copper-clad substrate.

[0017] In the above implementation process, copper layers are bonded to both sides of the ceramic sheet. The bottom copper layer is connected to the base for heat dissipation, and the top copper layer is etched to form circuit traces. The chip is then soldered onto these traces. The ceramic layer plays a key role in providing electrical insulation while maintaining good thermal conductivity.

[0018] Furthermore, the bridge arm mechanism also includes a driving resistor, which is mounted on the mounting substrate and connected to the gate of the gallium nitride power chip.

[0019] In the above implementation process, by connecting the driving resistor to the gate of the gallium nitride power chip, the driving resistor is built into the inside of the gallium nitride power switching device, which can suppress high-frequency parasitic oscillations and maintain stable device operation.

[0020] Furthermore, the gallium nitride power switching device also includes a thermistor, which is mounted on the mounting substrate.

[0021] In the above implementation process, by mounting a thermistor on the mounting substrate, the operating temperature of the gallium nitride power switch device can be monitored, and an alert can be given when the gallium nitride power switch device overheats, thus ensuring the normal operation of the gallium nitride power switch device.

[0022] Secondly, this application provides a motor controller including the gallium nitride power device described in any of the first aspects.

[0023] Other features and advantages disclosed in this application will be set forth in the following description, or some features and advantages may be inferred from the description or determined without doubt, or may be learned by practicing the above-described technology disclosed in this application.

[0024] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0025] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of a gallium nitride power device provided in the embodiments of this application; Figure 2 This is a schematic diagram of the structure of a gallium nitride power component provided in an embodiment of this application; Figure 3This is a schematic diagram of the structure of a gallium nitride power switch device provided in an embodiment of this application; Figure 4 This is a schematic diagram showing the connection between the gallium nitride power chip and the drive line provided in an embodiment of this application.

[0027] Reference numerals: housing 100; heat dissipation substrate 200; gallium nitride power component 300; bridge arm mechanism 310; mounting substrate 311; gallium nitride power switch device 312; gallium nitride power chip 313; drive line 314; first power line 315; second power line 316; power terminal 317; signal terminal 318. Detailed Implementation

[0028] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0029] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0030] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0031] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or a point connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0032] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0033] Generally, the most widely used inverters in the electric drive field are Si-based IGBT (Insulated-Gate Bipolar Transistor) inverters, which realize the conversion of DC to AC. IGBT technology has been in mass production for a long time, has low unit power cost, and has good thermal stability and reliability.

[0034] However, IGBT inverters have the following objective drawbacks: Due to the minority carrier storage effect, IGBTs have slow switching speeds (turn-off time of hundreds of nanoseconds), and switching losses (turn-on / turn-off losses) increase sharply at high frequencies, leading to a decrease in the overall efficiency of the inverter. IGBT chips have a complex structure, and their chip area is much larger than that of GaN (gallium nitride) chips at the same power. They also have poor heat dissipation, resulting in a large size and low power density for the entire electric drive module (inverter and heat dissipation). To address the aforementioned technical problems, this application provides a gallium nitride (GaN) power device and a motor controller. This GaN power device applies GaN power switching devices to the power module of the motor controller, achieving inverter functionality through GaN power switching devices. The material properties of GaN power switching devices overcome the bottlenecks of traditional silicon devices in high-frequency, high-voltage, and high-efficiency scenarios. Specifically, GaN power switching devices possess a high bandgap and high breakdown electric field, allowing for the same high voltage to be achieved with a thinner drift region, avoiding increased resistance due to thicker layers, and enabling chip miniaturization. Their electron mobility is higher than that of silicon-based IGBTs, resulting in faster turn-on speeds and lower losses. Therefore, this GaN power device achieves the technical effects of reducing device size and increasing power density.

[0035] Please see Figure 1 To the diagram, Figure 1 This is a schematic diagram of the gallium nitride power device provided in the embodiments of this application. Figure 2 This is a schematic diagram of the structure of a gallium nitride power component provided in an embodiment of this application. Figure 3 This is a schematic diagram of the structure of a gallium nitride power switching device provided in an embodiment of this application; the gallium nitride power device includes: 100 for the outer casing; Heat dissipation substrate 200 is mounted on housing 100; The gallium nitride power component 300 includes multiple bridge arm mechanisms 310. Each bridge arm mechanism 310 includes a mounting substrate 311 and multiple gallium nitride power switching devices 312. The gallium nitride power switching devices 312 are mounted on the mounting substrate 311, which is mounted on a heat dissipation substrate 200. Each gallium nitride power switching device 312 includes multiple gallium nitride power chips 313 connected in parallel. The gallium nitride power chips 313 are mounted on the mounting substrate 311 by silver sintering.

[0036] For example, the housing 100 may be an insulating housing for supporting and protecting the heat dissipation substrate 200 and the gallium nitride power component 300; For example, the heat dissipation substrate 200 and the mounting substrate 311 in the gallium nitride power component are matched and mounted, and the heat generated by the gallium nitride power switching device 312 during operation is dissipated more effectively through the heat dissipation substrate 200.

[0037] For example, the gallium nitride power component 300 comprises multiple bridge arm mechanisms 310, forming an inverter circuit; optionally, taking a three-phase inverter circuit as an example, the gallium nitride power component 300 includes three parallel bridge arm mechanisms 310, each bridge arm mechanism 310 including two gallium nitride power switching devices 312; wherein, the internal circuit topology of the three-phase inverter circuit is as follows: The gallium nitride power module 300 has three bridge arms, corresponding to the U, V and W three-phase outputs respectively; Each bridge arm mechanism 310 consists of two power switching devices (gallium nitride power switching devices 312) connected in series, one of which can be called the upper tube and the other can be called the lower tube; Optionally, each gallium nitride power switch is connected in antiparallel to a freewheeling diode to provide a discharge path for the reverse induced electromotive force (back EMF) generated by the motor windings.

[0038] For example, the gallium nitride power switch device 312 may include multiple gallium nitride power chips 313 connected in parallel, which can effectively improve the power density of the power control. In this embodiment, the number of gallium nitride power chips 313 in the gallium nitride power switch device 312 is illustrated by example as 8 chips, which does not represent a limitation on the number of gallium nitride power chips 313 in the gallium nitride power switch device 312. Optionally, the number of gallium nitride power switch devices 312 in this embodiment can be set to other numbers according to actual needs.

[0039] For example, the gallium nitride power chip 313 is a power switching device (e.g., a high electron mobility transistor) that uses gallium nitride as a semiconductor material for efficient power conversion and control; the gallium nitride power chip 313 includes three basic electrodes: source, drain and gate.

[0040] For example, silver sintering, also known as low-temperature silver sintering or silver paste sintering, is a chip mounting technology that uses nano-silver paste as a bonding material. Through processing at specific temperatures and pressures, it is densified to form a high-strength, high-thermal-conductivity, and high-melting-point bonding layer. Specifically, at temperatures below their melting point (typically <300°C), the surface atoms of the nano-silver particles in the paste become active, fusing together into a robust and dense porous nano-silver body through solid-state diffusion and surface energy-driven processes. This process is a solid-solid bonding without melting. By creating a more robust, thermally conductive, and heat-resistant chip bonding layer, silver sintering significantly improves the overall performance ceiling and lifespan of power modules.

[0041] For example, the gallium nitride (GaN) power switch device 312 is applied to the power module of a motor controller, that is, the inverter function is realized through the GaN power switch device 312. The material characteristics of the GaN power switch device 312 solve the bottleneck of traditional silicon devices in high-frequency, high-voltage, and high-efficiency scenarios. Among them, the GaN power switch device 312 has a high bandgap and a high breakdown electric field, which allows the same high voltage to be achieved with a thinner drift region, avoiding the increase in resistance caused by thick layers, and realizing chip miniaturization. Its electron mobility is higher than that of silicon-based IGBTs, which makes the turn-on speed of the GaN power switch device faster and the loss lower. Thus, the GaN power device can achieve the technical effects of reducing device size and increasing power density.

[0042] Please see Figure 4 , Figure 4 This is a schematic diagram showing the connection between the gallium nitride power chip and the drive line provided in an embodiment of this application.

[0043] In some embodiments, the gallium nitride power switching device 312 further includes a drive line 314, through which a plurality of gallium nitride power chips 313 are bonded to drive connection points on the mounting substrate 311.

[0044] For example, the gate of the gallium nitride power chip 313 and the drive connection point of the mounting substrate 311 are connected by drive lines respectively, so that control signals are transmitted to the gallium nitride power chip 313 through the drive lines, and the gate of the gallium nitride power chip 313 can be directly controlled.

[0045] In some embodiments, multiple gallium nitride power chips 313 in the gallium nitride power switching device 312 are connected in parallel, and the gates of the gallium nitride power chips 313 are uniformly connected to the same drive connection point on the mounting substrate 311.

[0046] In some embodiments, the gallium nitride power switch device 312 further includes a first power line 315, through which the power connection point of the gallium nitride power switch device 312 is connected to the power connection point of the mounting substrate 311.

[0047] For example, the power connection point of the gallium nitride power switch device 312 and the power connection point of the mounting substrate 311 are respectively connected through the first power line 315, which undertakes the main task of energy transmission.

[0048] In some embodiments, the gallium nitride power switch device 312 further includes a second power line 316, which is matched with the first power line 315. The power connection point of the gallium nitride power switch device 312 is connected to the power connection point of the mounting substrate 311 through the second power line 316.

[0049] For example, by connecting the power connection point of the gallium nitride power switch device 312 and the power connection point of the mounting substrate 311 through two power connection lines: the first power line 315 and the second power line 316, respectively, the current carrying capacity is improved by avoiding the limitations of chip manufacturing process and the narrow pads on the chip surface.

[0050] Optionally, the first power line 315 and the second power line 316 are connected in parallel, and the first power line 315 and the second power line 316 are spatially offset. For example, the first power line 315 may be positioned lower and closer to the gallium nitride power chip 313 than the second power line 316, thereby spatially offsetting the first power line 315 and the second power line 316.

[0051] In some implementations, the power connection point of the gallium nitride power switch device 312 can be the source or drain of the gallium nitride power chip 313.

[0052] In some embodiments, the power connection points of the mounting substrate 311 are D-type pads and S-type pads; Inside the gallium nitride (GaN) power device, multiple GaN power chips 313 are integrated and packaged together. The upper copper layer of the mounting substrate 311 is etched into complex circuitry, including drain (D) and source (S) pads for each chip. The D pads are used to solder and electrically connect the drain of the GaN power chip 313, while the S pads are used to solder and electrically connect the source of the GaN power chip 313. The D pads are primarily the power input point, connecting to the high-voltage side and carrying the main current. The S pads are the common point for power output and drive return. They carry large currents and serve as the reference ground for sensitive control signals. Their design has a decisive impact on the module's switching performance, stability, and anti-interference capability.

[0053] In some embodiments, the gallium nitride power component 300 further includes a power terminal 317, which is mounted on a mounting substrate 311 and connected to the source or drain of the gallium nitride power chip 313.

[0054] For example, external devices such as input power supplies and motors are connected to the source or drain of the gallium nitride power chip 313 through power terminals 317, that is, the input and output of main power energy are carried out through power terminals 317.

[0055] In some embodiments, the gallium nitride power component further includes a signal terminal 318, which is mounted on a mounting substrate 311 and connected to the gate of the gallium nitride power chip 313.

[0056] For example, control signals, status feedback and power are transmitted to the gallium nitride power switching device 312 through the signal terminal 318, that is, the on and off of the gallium nitride power chip 313 can be controlled through the signal terminal 318.

[0057] In some embodiments, the mounting substrate 311 is a ceramic copper-clad substrate.

[0058] For example, the mounting substrate 311 is a direct bonded copper ceramic substrate (DBC), in which copper layers are bonded to both sides of a ceramic sheet (such as alumina Al2O3 or aluminum nitride AlN). The bottom copper layer is connected to the base for heat dissipation, and the top copper layer is etched to form circuit traces. The chip is soldered onto these traces. The ceramic layer plays a key role in providing electrical insulation while maintaining good thermal conductivity.

[0059] In some embodiments, the bridge arm mechanism 310 further includes a drive resistor mounted on the mounting substrate 311 and connected to the gate of the gallium nitride power chip 313.

[0060] For example, by connecting the driving resistor to the gate of the gallium nitride power chip 313, the driving resistor is built into the gallium nitride power switching device 312, which can suppress high-frequency parasitic oscillations and maintain stable device operation.

[0061] In some embodiments, the gallium nitride power switching device 312 also includes a thermistor mounted on the mounting substrate 311.

[0062] For example, by mounting a thermistor on the mounting substrate 311, the operating temperature of the gallium nitride power switch device 312 can be monitored, and an alert can be given when the gallium nitride power switch device 312 overheats, ensuring the normal operation of the gallium nitride power switch device 312.

[0063] In some implementations, the thermistor may be an NTC (Negative Temperature Coefficient) resistor, a resistance temperature detector, a thermocouple, etc., which are only examples and not limitations.

[0064] Exemplary, embodiments of this application provide a motor controller, including Figures 1 to 4 The gallium nitride power device shown.

[0065] In some implementation scenarios, the gallium nitride power device provided in this application embodiment is applied to a motor controller. The core is to solve the bottleneck of traditional silicon (Si) devices in high-frequency, high-voltage, and high-efficiency scenarios by leveraging the material properties of gallium nitride. Gallium nitride has a high bandgap and a high breakdown electric field, which allows the same high voltage to be achieved with a thinner drift region, avoiding the increase in resistance caused by thicker layers and enabling chip miniaturization. Its electron mobility is higher than that of silicon-based IGBTs, resulting in faster turn-on speed and lower losses for gallium nitride. For example, the specific implementation steps of the manufacturing process for a gallium nitride-based power module, based on its material properties, are shown below: Step 1: Silver sintering of gallium nitride power chip, welding of NTC resistors and drive resistors; Gallium nitride has a lower thermal conductivity than SiC. The silver sintering process, which has a stronger thermal conductivity and lower resistivity, is used. The thermal conductivity is much greater than that of ordinary solder welding, and the resistivity is lower than that of ordinary solder welding, which is beneficial for heat dissipation and conductivity. The driving resistor is built into the module to suppress high-frequency parasitic oscillations and maintain stable device operation. Step 2: Drive wire bonding; Step 3: Bonding the first power line and the second power line; Due to limitations in chip manufacturing processes, the chip surface pads are very narrow. To ensure the current carrying capacity of the module, two power lines are soldered on each D or S pad (spaced vertically). Step 4: Solder the mounting base plate (DBC) to the heat dissipation base plate; Step 5: Install and bond the outer casing; Step 6: Solder the terminals (power terminals, signal terminals); Step 7: Apply adhesive and cover; For example, a motor controller based on gallium nitride has at least the following beneficial effects: Gallium nitride power modules have fast switching speeds and low on-resistance; low switching losses (turn-on / turn-off losses) and high inverter efficiency. Gallium nitride chips have low thermal conductivity. Combined with silver sintering process, the heat dissipation and conductivity of the entire system are improved. With small chip size, and through optimization of chip layout and bonding process, two power lines are bonded to each electrode to improve the module's current carrying capacity. In the standard DC6i package, eight chips are connected in parallel on a single half-bridge arm to improve the power density of the electronic control. Silver sintering is used to bond the chip, improving heat dissipation and conductivity; each electrode is bonded with two power lines (spatial vertical position) to improve current carrying capacity.

[0066] For example, the gallium nitride power device provided in this application embodiment can be applied to power scenarios involving DC to AC conversion, such as photovoltaic power generation and energy storage.

[0067] It should be understood that the phrases "in this embodiment," "in this application embodiment," or "as an optional implementation" throughout the specification mean that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this application. Therefore, the phrases "in this embodiment," "in this application embodiment," or "as an optional implementation" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Those skilled in the art should also understand that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily essential to this application.

[0068] In the various embodiments of this application, it should be understood that the sequence number of each process does not necessarily imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0069] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of protection of the claims.

Claims

1. A gallium nitride power device, characterized in that, include: outer casing; A heat dissipation substrate, which is mounted on the outer casing; A gallium nitride (GaN) power component includes multiple bridge arm mechanisms, each including a mounting substrate and multiple GaN power switching devices. The GaN power switching devices are mounted on the mounting substrate, which is mounted on a heat dissipation substrate. Each GaN power switching device includes multiple GaN power chips connected in parallel, and the GaN power chips are mounted on the mounting substrate by silver sintering.

2. The gallium nitride power device according to claim 1, characterized in that, The gallium nitride power switching device also includes a drive line, through which the plurality of gallium nitride power chips are bonded to the drive connection point of the mounting substrate.

3. The gallium nitride power device according to claim 1 or 2, characterized in that, The gallium nitride power switch device further includes a first power line, and the power connection point of the gallium nitride power switch device is connected to the power connection point of the mounting substrate through the first power line.

4. The gallium nitride power device according to claim 3, characterized in that, The gallium nitride power switch device further includes a second power line, which is matched with the first power line. The power connection point of the gallium nitride power switch device is connected to the power connection point of the mounting substrate through the second power line.

5. The gallium nitride power device according to claim 4, characterized in that, The gallium nitride power component further includes a power terminal, which is mounted on the mounting substrate and connected to the source or drain of the gallium nitride power chip.

6. The gallium nitride power device according to claim 1, characterized in that, The gallium nitride power component further includes a signal terminal, which is mounted on the mounting substrate and connected to the gate of the gallium nitride power chip.

7. The gallium nitride power device according to claim 1, characterized in that, The mounting substrate is a ceramic copper-clad substrate.

8. The gallium nitride power device according to claim 1, characterized in that, The bridge arm mechanism also includes a driving resistor, which is mounted on the mounting substrate and connected to the gate of the gallium nitride power chip.

9. The gallium nitride power device according to claim 1 or 8, characterized in that, The gallium nitride power switching device also includes a thermistor, which is mounted on the mounting substrate.

10. A motor controller, characterized in that, Includes the gallium nitride power device as described in any one of claims 1 to 9.

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