Safety anti-vibration field effect transistor

Abstract

The utility model relates to technical field of semiconductor parts especially relates to a safe anti -seismic type field effect tube, the utility model adopts the technical scheme: including field effect tube main part structure, the lower extreme of field effect tube main part structure is equipped with three connecting pin feet that left and right even distribution, the connecting pin foot is flat plate type structure, the lower extreme of connecting pin foot is equipped with the pin foot excess board of width less than the width of connecting pin foot, the left and right sides of connecting pin foot of middle position are equipped with a first welding stability groove that opens to left and right direction respectively, the lower extreme of connecting pin foot of middle position is located the left and right sides of pin foot excess board and is equipped with second welding stability groove respectively, the utility model has the advantages that: when welding, can form the staggered welding fastening force from different directions, the overall welding stability is better, the bearing capacity of connecting position is stronger, has reliable anti -drop effect after welding, can satisfy the safe use demand in the vibration environment.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor component technology, and in particular to a safe and shock-resistant field-effect transistor. Background Technology

[0002] Field-effect transistors (FETs) are among the most important semiconductor components. Existing FETs are soldered using cylindrical or flat pins, resulting in planar contact at the connection points. This makes it difficult to guarantee the tightness of the solder joints during use. In some special application environments, such as vibration environments, the tightness of the solder joints plays a crucial role in the performance during use. However, the stability of existing FETs during soldering is relatively poor, their shock resistance is relatively weak, and the load-bearing capacity of the solder joints is relatively low. Utility Model Content

[0003] The purpose of this invention is to provide a safe and shock-resistant field-effect transistor. It features two sets of interlocking welding stabilizing grooves on the middle pin structure of the pin structure of the field-effect transistor. During welding, these grooves can form staggered welding fastening forces from different directions, resulting in better overall welding stability, stronger load-bearing capacity at the connection point, and reliable anti-detachment effect after welding. This design meets the safety requirements for use in vibration environments, enhances durability and shock resistance during use, and thus expands the application range of the product.

[0004] The technical solution of this utility model is as follows: A safe and earthquake-resistant field-effect transistor includes a field-effect transistor main structure. The lower end of the field-effect transistor main structure is provided with three connecting pins evenly distributed on the left and right sides. The connecting pins are flat plate structures. The lower end of the connecting pins is provided with a pin transition plate with a width smaller than the width of the connecting pin. The characteristic is that: the left and right sides of the connecting pin in the middle position are respectively provided with a first welding stabilizing groove opening to the left and right directions, and the lower end of the connecting pin in the middle position is provided with a second welding stabilizing groove symmetrically and opening downward on the left and right sides of the pin transition plate.

[0005] Furthermore, the inner sides of both the first and second welding stabilizing grooves are arc-shaped structures.

[0006] Furthermore, the width of the inner side of the first welding stabilizing groove and the second welding stabilizing groove is greater than the width of the outer side.

[0007] Furthermore, the first welding stabilizing groove is located at the center position of the connecting pin in the vertical direction.

[0008] The beneficial effects of this utility model are: This invention features two sets of interlocking welding stabilizing grooves on the middle pin structure of the field-effect transistor's pin structure. During welding, these grooves generate staggered welding fastening forces from different directions, resulting in better overall welding stability, stronger load-bearing capacity at the connection point, and reliable anti-detachment effect after welding. This design meets the safety requirements for use in vibrating environments, enhances durability and shock resistance, and thus expands the product's application range. Attached Figure Description

[0009] Figure 1 This is a three-dimensional structural diagram of the present invention; Figure 2 This is a front view of the present invention; Figure 3 This is a schematic diagram of the left side of this utility model; Figure 4 This is a schematic diagram on the right side of the present invention; Figure 5 This is a top view of the present invention; Figure 6 This is a bottom view of the present invention; Figure 7 This is a three-dimensional structural diagram of the present invention in the second direction; In the diagram: 1. Main structure of the field-effect transistor; 2. Connecting pins; 3. Pin transition plate; 4. First welding stabilizing groove; 5. Second welding stabilizing groove. Detailed Implementation

[0010] like Figures 1 to 7As shown, a safe and earthquake-resistant field-effect transistor (FET) includes a FET main structure 1. The lower end of the FET main structure 1 has three evenly distributed connecting pins 2, each a flat plate. The lower end of each connecting pin 2 has a pin transition plate 3 with a width smaller than the pin 2, allowing welding to be performed through the pins. On the left and right sides of the middle connecting pin 2, there is a first welding stabilizing groove 4 opening to the left and right. On the left and right sides of the pin transition plate 3 at the lower end of the middle connecting pin 2, there is a symmetrical second welding stabilizing groove 5 opening downwards. These grooves allow for welding in different directions, forming a reliable anti-loosening weld, resulting in better overall safety and stronger earthquake resistance during later use. By setting two sets of interoperable welding stabilizing grooves on the middle pin structure of the field-effect transistor's pin structure, it can form staggered welding fastening forces from different directions during welding, resulting in better overall welding stability, stronger load-bearing capacity at the connection position, reliable anti-detachment effect after welding, and meeting the safety requirements of vibration environment. It is also more durable and has stronger shock resistance, thereby expanding the application range of the product.

[0011] Preferably, the inner sides of the first welding stabilizing groove 4 and the second welding stabilizing groove 5 are both arc-shaped structures, which are relatively easy to manufacture and process, have relatively low production costs, and allow for smooth welding, making it easier for solder to flow into this position.

[0012] Preferably, the width of the inner side of the first welding stabilizing groove 4 and the second welding stabilizing groove 5 is greater than the width of the outer side, so that the connection force is more stable after welding, the welding position has a reliable anti-loosening effect, and the overall seismic performance is better in later use.

[0013] Preferably, the first welding stabilizing groove 4 is located at the center of the connecting pin 2 in the vertical direction, so that this position has a relatively small impact on the strength of the pin structure and the fitting strength during welding can also reach the best.

[0014] The above description is the preferred embodiment of this utility model. It should be noted that for those skilled in the art, several improvements or substitutions can be made without departing from the principle of this utility model, and these improvements or substitutions should also be considered within the protection scope of this utility model.

Claims

1. A safe and earthquake-resistant field-effect transistor, comprising a field-effect transistor main structure (1), wherein the lower end of the field-effect transistor main structure (1) is provided with three connecting pins (2) evenly distributed on the left and right, the connecting pins (2) being a flat plate structure, and the lower end of the connecting pins (2) being provided with a pin transition plate (3) with a width smaller than the width of the connecting pins (2), characterized in that: The connecting pin (2) in the middle position is provided with a first welding stabilizing groove (4) with an opening in the left and right directions on both sides. The lower end of the connecting pin (2) in the middle position is provided with a second welding stabilizing groove (5) with a symmetrical opening facing downward on both sides of the pin transition plate (3).

2. The safe and earthquake-resistant field-effect transistor according to claim 1, characterized in that: The inner sides of the first welding stabilizing groove (4) and the second welding stabilizing groove (5) are both arc-shaped structures.

3. The safe and earthquake-resistant field-effect transistor according to claim 1, characterized in that: The width of the inner side of the first welding stabilizing groove (4) and the second welding stabilizing groove (5) is greater than the width of the outer side.

4. The safe and earthquake-resistant field-effect transistor according to claim 1, characterized in that: The first welding stabilizing groove (4) is located at the center of the connecting pin (2) in the vertical direction.

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