Plastic package power module

CN224910125UActive Publication Date: 2026-10-27GZK INTELLIGENT POWER TECH (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202522555523.9
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-12-01
Publication Date
2026-10-27
Estimated Expiration
2035-12-01

AI Technical Summary

Technical Problem

[0003]但是目前的塑封功率模块还存在一些缺陷,例如塑封体分层的问题等

Benefits of technology

[0015]从上面所述可以看出,本申请提供了一种塑封功率模块,包括:基板;功率芯片,设置在基板的一侧;连接件,设置在功率芯片远离基板的一侧;功率端子,设置在基板靠近功率芯片的一侧,包括正极输入端、负极输入端和输出端;输出端位于基板的第一条短边的一端;正极输入端和负极输入端间隔设置,且均位于基板的第二条短边处,靠近第二条短边的一端设置;信号端子,设置在基板靠近功率芯片的一侧,包括第一栅极端、第一源极端、第一漏极端、第二栅极端、第二源极端和第二漏极端;第一栅极端、第一源极端和第一漏极端间隔设置,且均位于第一条短边处,第一漏极端位于第一条短边的另一端,第一栅极端和第一源极端均位于第一漏极端与输出端之间;第二栅极端、第二源极端和第二漏极端间隔设置,且均位于第二条短边处,第二漏极端位于第二条短边的另一端,第二栅极端和第二源极端均位于第二漏极端与负极输入端之间;塑封体,设置在连接件远离基板的一侧,包覆基板、连接件、功率芯片、部分功率端子和部分信号端子。通过将第一漏极端和第二漏极端设置在基板最外侧,相对于设置在基板内,可以有效减少塑封体尺寸,降低塑封体分层风险,进而提高生产良率;通过在基板的一端边角设置正极输入端和负极输入端,另一端边角设置输出端,使得换流路径接近,模块可靠性更强;正极输入端和负极输入端并列间隔设置,装配更容易,空间利用率更高;其余信号端子设置在漏极端和功率端子之间,相对于设置在基板内,进一步提高空间利用率。该塑封功率模块结构简单,制作方便,集成度高,空间利用率高,可靠性强。

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Abstract

The application provides a plastic package power module, comprising a substrate, a power chip, a connecting piece, a power terminal, a signal terminal and a plastic package body; an output end is located at one end of a first short side of the substrate; a positive input end and a negative input end are arranged at intervals and are located at a second short side of the substrate, close to one end of the second short side; a first gate end, a first source end and a first drain end are arranged at intervals and are located at the first short side, the first drain end is located at the other end of the first short side, and the first gate end and the first source end are located between the first drain end and the output end; a second gate end, a second source end and a second drain end are arranged at intervals and are located at the second short side, the second drain end is located at the other end of the second short side, and the second gate end and the second source end are located between the second drain end and the negative input end. The plastic package power module provided by the application has the advantages of simple structure, convenient manufacturing, high integration, high space utilization and high reliability.
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Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a plastic-encapsulated power module. Background Technology

[0002] Power modules have wide applications in many fields such as power electronics, industrial automation, renewable energy, and electric vehicles. Common power modules are mainly classified into potted modules and molded modules according to their packaging type, with molded modules primarily using single-tube and half-bridge topologies. Compared to traditional potted modules, molded modules are highly favored in the new energy vehicle sector due to their advantages of smaller size, lighter weight, simpler manufacturing process, and higher power density.

[0003] However, current molded power modules still have some drawbacks, such as delamination of the molded body. As the size of power modules increases, the size of the molded body also increases, making delamination more likely during manufacturing and leading to a decrease in production yield. Furthermore, the limited integration of molded power modules not only increases costs but also introduces other failure risks. Therefore, there is an urgent need for a molded power module with higher space utilization and greater reliability. Utility Model Content

[0004] In view of this, the purpose of this application is to propose a plastic-encapsulated power module to solve or partially solve the above-mentioned technical problems.

[0005] This application provides a molded power module, comprising: a substrate; a power chip disposed on one side of the substrate; a connector disposed on the side of the power chip away from the substrate; power terminals disposed on the side of the substrate near the power chip, including a positive input terminal, a negative input terminal, and an output terminal; the output terminal is located at one end of a first short side of the substrate; the positive input terminal and the negative input terminal are spaced apart and both located on a second short side of the substrate, with the output terminal located near one end of the second short side; signal terminals disposed on the side of the substrate near the power chip, including a first gate terminal, a first source terminal, a first drain terminal, a second gate terminal, a second source terminal, and a second drain terminal; the first gate terminal, the first source terminal, the second source terminal, the second drain terminal, the first source terminal, the second source terminal, and the second drain terminal; the first gate terminal, the first source terminal, the second source terminal, the second source terminal, the second drain terminal, the first ... The first source terminal and the first drain terminal are spaced apart and are both located on the first short side, with the first drain terminal located at the other end of the first short side. The first gate terminal and the first source terminal are both located between the first drain terminal and the output terminal. The second gate terminal, the second source terminal, and the second drain terminal are spaced apart and are all located on the second short side, with the second drain terminal located at the other end of the second short side. The second gate terminal and the second source terminal are both located between the second drain terminal and the negative input terminal. A molding compound is disposed on the side of the connector away from the substrate, covering the substrate, the connector, the power chip, a portion of the power terminals, and a portion of the signal terminals.

[0006] Furthermore, a temperature sensor is provided on the side of the substrate near the power chip, and the temperature sensor is located at the corner of the substrate.

[0007] Furthermore, the signal terminal also includes a first detection terminal and a second detection terminal, which are spaced apart and both located on the first short side. Both the first detection terminal and the second detection terminal are located between the first drain terminal and the output terminal. The temperature sensor is connected to the first detection terminal and the second detection terminal respectively via bonding wires.

[0008] Furthermore, the first short side is provided with the first drain terminal, the first detection terminal, the second detection terminal, the first gate terminal, the first source terminal and the output terminal in sequence; the second short side is provided with the positive input terminal, the negative input terminal, the second source terminal, the second gate terminal and the second drain terminal in sequence.

[0009] Furthermore, the distance between the positive input terminal and the negative input terminal is greater than or equal to 3 mm, the distance between the second drain terminal and the second gate terminal is greater than or equal to 3 mm, and the distance between the first drain terminal and the first detection terminal is greater than or equal to 3 mm.

[0010] Furthermore, the output terminal and the first source terminal are integrated into one structure, and the negative input terminal and the second source terminal are integrated into one structure.

[0011] Furthermore, the power chip includes a substrate, a source, a gate, and a drain. The source and the gate are located on the side of the substrate away from the substrate, and the drain is located on the side of the substrate closer to the substrate.

[0012] Furthermore, the source electrode is connected to the first source electrode or the second source electrode via the connector.

[0013] Furthermore, the gate is connected to the first gate terminal or the second gate terminal via a bonding wire.

[0014] Furthermore, the substrate includes a first conductive layer, an insulating layer, and a second conductive layer stacked together. The first conductive layer is disposed close to the power chip, and the drain electrode is connected to either the first drain electrode or the second drain electrode through the first conductive layer.

[0015] As can be seen from the above description, this application provides a plastic-encapsulated power module, including: a substrate; a power chip disposed on one side of the substrate; a connector disposed on the side of the power chip away from the substrate; power terminals disposed on the side of the substrate near the power chip, including a positive input terminal, a negative input terminal, and an output terminal; the output terminal is located at one end of the first short side of the substrate; the positive input terminal and the negative input terminal are spaced apart and both are located on the second short side of the substrate, with the terminal near the second short side; signal terminals disposed on the side of the substrate near the power chip, including a first gate terminal, a first source terminal, a first drain terminal, a second gate terminal, and a second... The system comprises a source terminal and a second drain terminal; a first gate terminal, a first source terminal, and a first drain terminal are spaced apart and all located on the first short side, with the first drain terminal located at the other end of the first short side, and the first gate terminal and the first source terminal are both located between the first drain terminal and the output terminal; a second gate terminal, a second source terminal, and a second drain terminal are spaced apart and all located on the second short side, with the second drain terminal located at the other end of the second short side, and the second gate terminal and the second source terminal are both located between the second drain terminal and the negative input terminal; and a molding compound disposed on the side of the connector away from the substrate, covering the substrate, the connector, the power chip, some power terminals, and some signal terminals. By placing the first and second drain terminals on the outermost side of the substrate, compared to placing them inside the substrate, the size of the molded module can be effectively reduced, the risk of delamination can be lowered, and production yield can be improved. By placing the positive and negative input terminals at one corner of the substrate and the output terminal at the other corner, the commutation paths are closer, resulting in stronger module reliability. The positive and negative input terminals are arranged side-by-side with spacing, making assembly easier and improving space utilization. The remaining signal terminals are located between the drain terminals and the power terminals, further improving space utilization compared to placing them inside the substrate. This molded power module has a simple structure, is easy to manufacture, has high integration, high space utilization, and strong reliability. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a three-dimensional structural diagram of a plastic-encapsulated power module according to an embodiment of this application.

[0018] Figure 2 for Figure 1 Exploded view of the structure of a plastic-encapsulated power module.

[0019] Figure 3 for Figure 1Top view of the plastic-encapsulated power module.

[0020] Figure 4 for Figure 2 A schematic diagram of the connection structure of the middle substrate.

[0021] Reference numerals: 1. Substrate; 1-1. First short side; 1-2. Second short side; 2. Power chip; 3. Connector; 4. Power terminal; 4-1. Positive input terminal; 4-2. Negative input terminal; 4-3. Output terminal; 5. Signal terminal; 5-1. First gate terminal; 5-2. First source terminal; 5-3. First drain terminal; 5-4. Second gate terminal; 5-5. Second source terminal; 5-6. Second drain terminal; 5-7. First detection terminal; 5-8. Second detection terminal; 6. Encapsulation; 7. Temperature sensor. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0023] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by a person skilled in the art to which this application pertains. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects.

[0024] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0025] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0026] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0027] The following describes specific embodiments in conjunction with... Figures 1 to 4 The technical solution of this application will be described in detail below.

[0028] Some embodiments of this application provide a molded power module, such as... Figure 1 and Figure 3 As shown, it includes: a substrate 1; a power chip 2 disposed on one side of the substrate 1; a connector 3 disposed on the side of the power chip 2 away from the substrate 1; a power terminal 4 disposed on the side of the substrate 1 near the power chip 2, including a positive input terminal 4-1, a negative input terminal 4-2, and an output terminal 4-3; the output terminal 4-3 is located at one end of the first short side 1-1 of the substrate 1; the positive input terminal 4-1 and the negative input terminal 4-2 are spaced apart and both are located at the second short side 1-2 of the substrate 1, near one end of the second short side 1-2; a signal terminal 5 disposed on the side of the substrate 1 near the power chip 2, including a first gate terminal 5-1, a first source terminal 5-2, a first drain terminal 5-3, a second gate terminal 5-4, a second source terminal 5-5, and a second drain terminal 5-6; the first gate terminal 5-1, the first source terminal 5-2, the first source terminal 5-3, the first source terminal 5-4, the first source terminal 5-5, and the second drain terminal 5-6; the first gate terminal 5-1, the first source terminal 5-4, the first source terminal 5-5, the first source terminal 5-6 ...4, the first source terminal 5-5, the first source terminal 5-5, the first source terminal 5-4, the first source terminal 5-5, the first source terminal 5-5, the first source terminal 5-4, the first source terminal -2 and the first drain terminal 5-3 are spaced apart and are both located at the first short side 1-1. The first drain terminal 5-3 is located at the other end of the first short side 1-1. The first gate terminal 5-1 and the first source terminal 5-2 are both located between the first drain terminal 5-3 and the output terminal 4-3. The second gate terminal 5-4, the second source terminal 5-5 and the second drain terminal 5-6 are spaced apart and are all located at the second short side 1-2. The second drain terminal 5-6 is located at the other end of the second short side 1-2. The second gate terminal 5-4 and the second source terminal 5-5 are both located between the second drain terminal 5-6 and the negative input terminal 4-2. The molding compound 6 is disposed on the side of the connector 3 away from the substrate 1, and covers the substrate 1, the connector 3, the power chip 2, part of the power terminal 4 and part of the signal terminal 5.

[0029] like Figure 1 and Figure 2The diagram shows a schematic of a plastic-encapsulated power module, where L represents the length of the module. The plastic-encapsulated power module includes a substrate 1, a power chip 2, connectors 3, power terminals 4, signal terminals 5, and a plastic package 6.

[0030] The substrate 1 serves as a load-bearing component and enables electrical connections. The power chip 2, also known as a power semiconductor device, is a specific type of chip capable of handling higher voltages and currents. The connector 3 is used to achieve electrical connections. The power terminal 4 is used for power transmission. The signal terminal 5 is used for signal transmission. The encapsulation 6 is used to seal the power module.

[0031] like Figure 3 As shown, the short side below the substrate 1 is the first short side 1-1, and the short side above the substrate 1 is the second short side 1-2. A first drain terminal 5-3 is provided at one end of the first short side 1-1, and an output terminal 4-3 is provided at the other end. The first gate terminal 5-1 and the first source terminal 5-2 can be randomly arranged between them. A positive input terminal 4-1 or a negative input terminal 4-2 is provided at one end of the second short side 1-2, and a second drain terminal 5-6 is provided at the other end. The second gate terminal 5-4 and the second drain terminal 5-6 can be randomly arranged between them.

[0032] The positive input terminal 4-1 and the negative input terminal 4-2 are arranged side-by-side on the same plane. Their width is determined by the current carrying capacity and the lower limit of the laser welding process, jointly constraining the minimum size of the module in the width direction. This greatly simplifies the laser welding process of the external copper busbar, enhancing module assembly efficiency and structural robustness. The drain terminal is located on the outermost side of the module, requiring only a single-sided electrical clearance, effectively reducing the overall module size, lowering the risk of delamination in the molding compound, and thus improving production yield. This achieves high power density while ensuring excellent electrical and thermal performance.

[0033] This encapsulated power module has a simple structure, is easy to manufacture, has a high degree of integration, high space utilization, and strong reliability.

[0034] In some embodiments, such as Figure 2 and Figure 4 As shown, a temperature sensor 7 is also provided on the side of the substrate 1 near the power chip 2, and the temperature sensor 7 is located at the corner of the substrate 1.

[0035] Temperature sensor 7 is, for example, an NTC (Negative Temperature Coefficient) thermistor. The temperature sensor 7 is packaged in a surface mount form, which, compared to conventional glass packaging, has a shorter heat transfer path, faster response speed, higher sensitivity, and occupies less area, thus saving more space.

[0036] Currently, power modules typically require external temperature sensors or capacitors for temperature monitoring and short-circuit protection, resulting in low levels of integration. Figure 4 As shown, in this embodiment, the temperature sensor 7 is placed inside the substrate 1, which offers high sensitivity, saves space, and supports adjustments to its placement and internal wiring, allowing for flexible definition of the signal terminal 5 sequence. This design does not require changes to the module's external dimensions or terminal spacing, significantly improving the convenience and adaptability of peripheral circuit design. Placing the temperature sensor 7 at a corner, near the power chip 2, ensures optimal coupling between its heat conduction path and the heat source of the power chip 2. This avoids direct impact from the high-temperature heat source that could lead to measurement inaccuracies, while also enabling rapid response to changes in the module's average temperature, achieving a high balance between protection speed and measurement accuracy.

[0037] In some embodiments, such as Figure 3 and Figure 4 As shown, the signal terminal 5 further includes a first detection terminal 5-7 and a second detection terminal 5-8. The first detection terminal 5-7 and the second detection terminal 5-8 are spaced apart and are both located at the first short side 1-1. The first detection terminal 5-7 and the second detection terminal 5-8 are both located between the first drain terminal 5-3 and the output terminal 4-3. The temperature sensor 7 is connected to the first detection terminal 5-7 and the second detection terminal 5-8 respectively through bonding wires.

[0038] like Figure 4 As shown, a first detection terminal 5-7 and a second detection terminal 5-8 are provided at the first short side 1-1 for temperature detection. The first detection terminal 5-7 and the second detection terminal 5-8 can be positioned between the output terminal 4-3 and the first drain terminal 5-3 as needed to improve integration. The module has a built-in temperature sensor 7, with drain terminals led out from the outermost side of the substrate 1 for real-time monitoring of the source-drain voltage drop, thus achieving short-circuit protection. This integrated design eliminates the need for external circuitry, enhancing module functionality and improving measurement accuracy and reliability.

[0039] In some embodiments, such as Figure 3 and Figure 4 As shown, the first short side 1-1 is provided with the first drain terminal (D1), the first detection terminal (T1), the second detection terminal (T2), the first gate terminal (G1), the first source terminal (S1), and the output terminal (AC) in sequence; the second short side 1-2 is provided with the positive input terminal (DC+), the negative input terminal (DC-), the second source terminal (S2), the second gate terminal (G2), and the second drain terminal (D2) in sequence.

[0040] like Figure 3As shown, the first drain terminal 5-3, the first gate terminal 5-1, and the first source terminal 5-2 are connected to a group of power chips 2 as upper bridge terminals, and the second source terminal 5-5, the second gate terminal 5-4, and the second drain terminal 5-6 are connected to another group of power chips 2 as lower bridge terminals.

[0041] In some embodiments, the distance between the positive input terminal 4-1 and the negative input terminal 4-2 is greater than or equal to 3 mm, the distance between the second drain terminal 5-6 and the second gate terminal 5-4 is greater than or equal to 3 mm, and the distance between the first drain terminal 5-3 and the first detection terminal 5-7 is greater than or equal to 3 mm.

[0042] Set the spacing to be greater than or equal to 3mm, such as 3mm, 4mm or 5mm, and the spacing of other terminals is such as 1.5mm, without any specific limitation, to compress the width to the maximum extent while ensuring a safe spacing.

[0043] In some embodiments, such as Figure 2 and Figure 4 As shown, the output terminal 4-3 and the first source terminal 5-2 are integrated into one structure, and the negative input terminal 4-2 and the second source terminal 5-5 are integrated into one structure.

[0044] like Figure 4 As shown, the power terminal 4 and the source terminal are integrated into a metal sheet structure, which further improves the integration and facilitates connection.

[0045] In some embodiments, the power chip 2 includes a substrate, a source, a gate, and a drain. The source and the gate are located on the side of the substrate away from the substrate 1, and the drain is located on the side of the substrate close to the substrate 1.

[0046] like Figure 4 As shown, the power chip 2 is a three-terminal semiconductor power device, including a source, a gate, and a drain. The source and gate are disposed away from the substrate 1, and the drain is disposed close to the substrate 1.

[0047] In some embodiments, such as Figure 4 As shown, the source electrode is connected to the first source electrode 5-2 or the second source electrode 5-5 via the connector 3.

[0048] Connector 3 is, for example, a metal sheet or similar structure, through which the source electrode is directly or indirectly connected to the source terminal.

[0049] By optimizing the chip layout and the top metal sheet structure, the driving circuit current is effectively confined within the metal sheet, significantly improving the utilization rate of substrate 1, thereby reducing the size of substrate 1 and achieving a significant reduction in cost.

[0050] In some embodiments, such as Figure 4As shown, the gate is connected to the first gate terminal 5-1 or the second gate terminal 5-4 via a bonding wire, further improving the integration density.

[0051] In some embodiments, the substrate 1 includes a first conductive layer, an insulating layer, and a second conductive layer stacked together. The first conductive layer is disposed close to the power chip 2, and the drain electrode is connected to the first drain terminal 5-3 or the second drain terminal 5-6 through the first conductive layer.

[0052] like Figure 2 As shown, substrate 1 includes a first conductive layer, an insulating layer, and a second conductive layer stacked together. The conductive layer is, for example, a copper-clad layer, and the insulating layer is, for example, a ceramic layer. The thicknesses of the two conductive layers can be the same or different. The first conductive layer achieves electrical isolation through an etching trench. The drain of power chip 2 is connected to the first conductive layer to achieve a drive circuit connection. Power terminal 4 is also connected to the first conductive layer to achieve a commutation circuit connection. Connection methods include, but are not limited to, soldering, silver sintering, etc.

[0053] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.

[0054] Furthermore, to simplify the description and discussion, and to avoid obscuring the embodiments of this application, the apparatus may be shown in block diagram form. This is to prevent the embodiments of this application from being difficult to understand, and it also takes into account the fact that the details of the implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this application will be implemented (i.e., these details should be fully within the understanding of those skilled in the art). In setting forth specific details to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that the embodiments of this application may be implemented without these specific details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0055] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0056] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A plastic-encapsulated power module, characterized in that, include: substrate; A power chip is disposed on one side of the substrate; A connector is disposed on the side of the power chip away from the substrate; A power terminal is disposed on the side of the substrate near the power chip, including a positive input terminal, a negative input terminal, and an output terminal; the output terminal is located at one end of the first short side of the substrate; the positive input terminal and the negative input terminal are spaced apart and are both located on the second short side of the substrate, near one end of the second short side; Signal terminals, disposed on the side of the substrate near the power chip, include a first gate terminal, a first source terminal, a first drain terminal, a second gate terminal, a second source terminal, and a second drain terminal; the first gate terminal, the first source terminal, and the first drain terminal are spaced apart and all located on the first short side, the first drain terminal is located at the other end of the first short side, and the first gate terminal and the first source terminal are both located between the first drain terminal and the output terminal; the second gate terminal, the second source terminal, and the second drain terminal are spaced apart and all located on the second short side, the second drain terminal is located at the other end of the second short side, and the second gate terminal and the second source terminal are both located between the second drain terminal and the negative input terminal; A molding compound is disposed on the side of the connector away from the substrate, and covers the substrate, the connector, the power chip, a portion of the power terminals, and a portion of the signal terminals.

2. The encapsulated power module according to claim 1, characterized in that, A temperature sensor is also provided on the side of the substrate near the power chip, and the temperature sensor is located at the corner of the substrate.

3. The encapsulated power module according to claim 2, characterized in that, The signal terminal also includes a first detection terminal and a second detection terminal, which are spaced apart and both located on the first short side. The first detection terminal and the second detection terminal are both located between the first drain terminal and the output terminal. The temperature sensor is connected to the first detection terminal and the second detection terminal respectively through bonding wires.

4. The encapsulated power module according to claim 3, characterized in that, The first short side is provided with the first drain terminal, the first detection terminal, the second detection terminal, the first gate terminal, the first source terminal and the output terminal in sequence; the second short side is provided with the positive input terminal, the negative input terminal, the second source terminal, the second gate terminal and the second drain terminal in sequence.

5. The encapsulated power module according to claim 4, characterized in that, The distance between the positive input terminal and the negative input terminal is greater than or equal to 3 mm, the distance between the second drain terminal and the second gate terminal is greater than or equal to 3 mm, and the distance between the first drain terminal and the first detection terminal is greater than or equal to 3 mm.

6. The encapsulated power module according to claim 4, characterized in that, The output terminal and the first source terminal are integrated into one structure, and the negative input terminal and the second source terminal are integrated into one structure.

7. The encapsulated power module according to claim 4, characterized in that, The power chip includes a substrate, a source, a gate, and a drain. The source and the gate are located on the side of the substrate away from the substrate, and the drain is located on the side of the substrate closer to the substrate.

8. The encapsulated power module according to claim 7, characterized in that, The source electrode is connected to either the first source electrode or the second source electrode via the connector.

9. The encapsulated power module according to claim 7, characterized in that, The gate is connected to the first gate terminal or the second gate terminal via a bonding wire.

10. The encapsulated power module according to claim 7, characterized in that, The substrate includes a first conductive layer, an insulating layer, and a second conductive layer stacked together. The first conductive layer is disposed close to the power chip, and the drain is connected to either the first drain terminal or the second drain terminal through the first conductive layer.