A double laser head ingot stripping device

CN224913830UActive Publication Date: 2026-10-30SHENZHEN RUNWEI INTELLIGENT EQUIP CO LTD
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Patent Information

Application Number
CN202522602287.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-12-08
Publication Date
2026-10-30
Estimated Expiration
2035-12-08

AI Technical Summary

Technical Problem

如专利公开号为CN223492326U的实用新型公开了一种晶锭剥片装置,该现有技术通过采用一个激光切割头和一个加工平台,激光剥片时,工作效率较低

Benefits of technology

本实用新型这样设置,将晶锭装载至载台组件上,通过调整载台组件在X轴方向和Y轴方向的位置,进而调整晶锭的位置,然后通过双激光光路组件发出激光光束,激光光束经双激光头组件后对晶锭进行扫描加工,在晶锭内部形成改质层,从而在晶锭上剥离出晶片;通过设置双激光光路组件和双激光头组件配合工作,进而可提升激光剥片时的工作效率。

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Abstract

The utility model relates to crystal ingot laser processing technical field especially a kind of crystal ingot double laser head stripping equipment, including base and frame, the frame is fixed on base;Double laser light path assembly is installed at the top of frame, double laser head assembly is installed at the front end of frame, double laser light path assembly and double laser head assembly upper end are correspondingly set;The base is movably provided with the loading platform component for loading crystal ingot, loading platform component is located below double laser head assembly, and double laser head assembly lower end and the crystal ingot on loading platform component correspondingly set;The loading platform component can be linearly displaced along the X-axis direction and Y-axis direction of base, to adjust the position change of crystal ingot relative to double laser head assembly lower end. Thus, by setting double laser light path assembly and double laser head assembly cooperate, and then the working efficiency when laser stripping can be improved.
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Description

Technical Field

[0001] This utility model relates to the field of crystal ingot laser processing technology, and specifically to a crystal ingot dual-laser-head stripping device. Background Technology

[0002] Crystal ingots possess excellent physical properties, which can significantly improve the performance and energy efficiency of microwave RF and power electronic devices. However, the high cost of substrates has limited the widespread application of crystal ingots. Multi-wire dicing technology results in significant roughness and subsurface damage on the cut surface, requiring a coarse grinding process to remove surface irregularities. Laser lift-off technology, on the other hand, can control surface irregularities to an extremely low level, thus eliminating the need for coarse grinding and saving time, equipment, and labor costs.

[0003] Currently, diamond wire cutting is the main technology used in the crystal ingot cutting industry. However, wire cutting technology has a high loss rate and takes too long. Taking slurry wire cutting as an example, up to 40% of the crystal ingot is wasted in the form of dust, and the high-speed travel of the cutting wire also causes roughness and surface / subsurface structural damage of 20-50μm. According to analysis, the total material loss of crystal ingot wire cutting technology is as high as 30%-50%, and for crystal ingots of 8 inches and above, the breakage rate of wire cutting increases significantly, and the mass production cost rises sharply.

[0004] Currently, most ingot laser cutting and stripping equipment in the industry uses a single laser cutting head. For example, the utility model patent with publication number CN223492326U discloses an ingot stripping device. This prior art, by using a single laser cutting head and a processing platform, has low work efficiency during laser stripping.

[0005] Therefore, there is still room for improvement and development in existing technologies. Utility Model Content

[0006] To address the problems of existing technologies, this invention proposes a dual-laser-head stripping device for crystal ingots. By setting up a dual-laser optical path assembly and a dual-laser-head assembly to work together, the efficiency of laser stripping can be improved.

[0007] To achieve the above objectives, the technical solution applied in this utility model is as follows: A dual-laser-head wafer stripping device for crystal ingots includes a base and a frame, with the frame fixed to the base. A dual-laser optical path assembly is mounted on the top of the frame, and a dual-laser head assembly is mounted on the front of the frame, with the dual-laser optical path assembly corresponding to the upper end of the dual-laser head assembly. A stage assembly for loading crystal ingots is movably mounted on the base, located below the dual-laser head assembly, with the lower end of the dual-laser head assembly corresponding to the crystal ingot on the stage assembly. The stage assembly can be linearly displaced along the X-axis and Y-axis of the base to adjust the position of the crystal ingot relative to the lower end of the dual-laser head assembly.

[0008] According to the above scheme, the dual laser optical path assembly includes a laser first optical path assembly and a laser second optical path assembly arranged side by side; the dual laser head assembly includes a laser first light-emitting assembly and a laser second light-emitting assembly arranged side by side; the laser first optical path assembly is correspondingly arranged with the laser first light-emitting assembly; the laser second optical path assembly is correspondingly arranged with the laser second light-emitting assembly; the laser first light-emitting assembly and the laser second light-emitting assembly are respectively correspondingly arranged with the ingot loaded on the stage assembly.

[0009] According to the above scheme, the laser-optical path assembly includes a laser, a laser-optical path shaping device, a laser-optical path reflecting device one, and a laser-optical path reflecting device two; the light-emitting end of the laser is correspondingly arranged with the light-inlet end of the laser-optical path reflecting device one, the light-emitting end of the laser-optical path reflecting device one is correspondingly arranged with the light-inlet end of the laser-optical path shaping device one, the light-emitting end of the laser-optical path shaping device one is correspondingly arranged with the light-inlet end of the laser-optical path reflecting device two, and the light-emitting end of the laser-optical path reflecting device two is correspondingly arranged with the light-inlet end of the laser-emitting assembly.

[0010] According to the above scheme, the laser-emitting component includes a laser-lifting Z-axis fixing plate, a laser-lifting Z-axis motor, and a laser-lifting shaping optical path device. The laser-lifting Z-axis fixing plate is vertically provided with a laser-lifting Z-axis guide rail. The laser-lifting shaping optical path device is slidably connected to the laser-lifting Z-axis guide rail. The laser-lifting Z-axis motor is used to drive the laser-lifting shaping optical path device to lift and lower. The light-emitting end of the laser-light-reflecting device is correspondingly set at the upper end of the laser-lifting shaping optical path device. The lower end of the laser-lifting shaping optical path device is provided with a laser-shaped light-emitting position and a laser-following height measuring instrument.

[0011] According to the above scheme, the laser two-path assembly includes a laser two-laser, a laser two-path reflection device one, a laser two-path shaping device, and a laser two-path reflection device two; the light-emitting end of the laser two-laser is correspondingly arranged with the light-inlet end of the laser two-path reflection device one, the light-emitting end of the laser two-path reflection device one is correspondingly arranged with the light-inlet end of the laser two-path shaping device, the light-emitting end of the laser two-path shaping device is correspondingly arranged with the light-inlet end of the laser two-path reflection device two, and the light-emitting end of the laser two-path reflection device two is correspondingly arranged with the laser two-light-emitting assembly.

[0012] According to the above scheme, the laser second light-emitting component includes a laser second lifting Z-axis fixing plate, a laser second lifting Z-axis motor, and a laser second lifting shaping optical path device; the laser second lifting Z-axis fixing plate is vertically provided with a laser second lifting Z-axis guide rail, the laser second lifting shaping optical path device is slidably connected to the laser second lifting Z-axis guide rail, the laser second lifting Z-axis motor is used to drive the laser second lifting shaping optical path device to lift and lower, the light-emitting end of the laser second optical path reflection device is correspondingly set at the upper end of the laser second lifting shaping optical path device, and the lower end of the laser second lifting shaping optical path device is provided with a laser second following height measuring instrument and a laser second shaped light-emitting position.

[0013] According to the above scheme, the stage assembly includes an X-axis linear motion platform, a Y-axis linear motion platform, a DD direct-drive rotary motor, a ceramic adsorption stage, and a laser power meter; the X-axis linear motion platform is movable back and forth on the base, the Y-axis linear motion platform is movable left and right on the X-axis linear motion platform, the DD direct-drive rotary motor and the laser power meter are mounted on the Y-axis linear motion platform, the output end of the DD direct-drive rotary motor is driven and connected to the ceramic adsorption stage, and the ceramic adsorption stage is used to load and fix the crystal ingot.

[0014] According to the above scheme, a height measuring instrument assembly is installed at the front end of the frame. The height measuring instrument assembly is located on one side of the dual laser head assembly and above the platform assembly. The height measuring instrument assembly includes a resistivity tester 31, a height measuring instrument, and a resistivity tester Z-axis motor. The resistivity tester Z-axis motor is used to drive the resistivity tester and the height measuring instrument to move up and down.

[0015] According to the above scheme, a visual positioning component is installed on the dual laser head assembly, which includes a visual positioning focusing lens one and a visual positioning focusing lens two arranged side by side.

[0016] According to the above scheme, the base includes an upper base and a lower base, the frame is fixed on the upper base, the upper base is fixed on the lower base, and the bottom of the lower base is provided with multiple positioning feet; the upper base is made of marble.

[0017] The beneficial effects of this utility model are: This invention is configured such that the crystal ingot is loaded onto the stage assembly, and the position of the crystal ingot is adjusted by adjusting the position of the stage assembly in the X and Y axes. Then, a laser beam is emitted through the dual laser optical path assembly, and the laser beam scans and processes the crystal ingot after passing through the dual laser head assembly, forming a modified layer inside the crystal ingot, thereby peeling off the wafer from the crystal ingot. By setting the dual laser optical path assembly and the dual laser head assembly to work together, the working efficiency of laser wafer peeling can be improved. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of this utility model; Figure 2 This is a schematic diagram of the platform assembly of this utility model; Figure 3 This is a schematic diagram of the height measuring instrument components of this utility model; Figure 4 This is a schematic diagram of the dual laser optical path assembly of this utility model; Figure 5 This is a schematic diagram of the dual laser head assembly and visual positioning assembly of this utility model.

[0019] In the picture: 10. Base; 11. Frame; 20. Stage assembly; 21. X-axis linear motion platform; 22. Y-axis linear motion platform; 23. DD direct drive rotary motor; 24. Ceramic adsorption stage; 25. Laser power meter; 30. Height measuring instrument assembly; 31. Resistivity meter; 32. Height measuring instrument; 33. Z-axis motor of resistivity meter; 40. Dual laser optical path assembly; 41. Laser-1 laser; 42. Laser-1 optical path shaping device; 43. Laser-1 optical path reflection device one; 44. Laser-1 optical path reflection device two; 45. Laser-2 laser; 46. Laser-2 optical path reflection device one; 47. Laser-2 optical path shaping device; 48. Laser... 50. Optical path reflection device II; 51. Dual laser head assembly; 52. Laser I lifting Z-axis fixing plate; 53. Laser I lifting Z-axis motor; 54. Laser I lifting Z-axis guide rail; 55. Laser I lifting shaping optical path device; 56. Laser I following height measuring instrument; 57. Laser II lifting Z-axis guide rail; 58. Laser II lifting Z-axis fixing plate; 59. Laser II lifting Z-axis motor; 50. Laser II lifting shaping optical path device; 510. Laser II following height measuring instrument; 511. Laser I shaping post-light output position; 512. Laser II shaping post-light output position; 60. Visual positioning assembly; 61. Visual positioning focusing lens I; 62. Visual positioning focusing lens II. Detailed Implementation

[0020] The technical solution of this utility model will be described below with reference to the accompanying drawings and embodiments.

[0021] like Figures 1 to 5As shown, the present invention discloses a crystal ingot dual-laser head stripping device, comprising a base 10 and a frame 11, wherein the frame 11 is fixed on the base 10; a dual-laser optical path assembly 40 is installed at the top of the frame 11, and a dual-laser head assembly 50 is installed at the front end of the frame 11, with the upper ends of the dual-laser optical path assembly 40 and the dual-laser head assembly 50 correspondingly arranged; a stage assembly 20 for loading crystal ingots is movably arranged on the base 10, the stage assembly 20 being located below the dual-laser head assembly 50, and the lower end of the dual-laser head assembly 50 correspondingly arranged with the crystal ingot on the stage assembly 20; the stage assembly 20 can be linearly displaced along the X-axis and Y-axis directions of the base 10 to adjust the position of the crystal ingot relative to the lower end of the dual-laser head assembly 50. This setup allows the ingot to be loaded onto the stage assembly 20. By adjusting the position of the stage assembly 20 in the X and Y axes, the position of the ingot can be adjusted. Then, a laser beam is emitted through the dual laser optical path assembly 40. After passing through the dual laser head assembly 50, the laser beam scans and processes the ingot, forming a modified layer inside the ingot, thereby peeling off the wafer from the ingot. By setting up the dual laser optical path assembly 40 and the dual laser head assembly 50, the working efficiency of laser wafer peeling can be improved.

[0022] Furthermore, the dual laser optical path assembly 40 includes a laser first optical path assembly and a laser second optical path assembly arranged side by side; the dual laser head assembly 50 includes a laser first light-emitting assembly and a laser second light-emitting assembly arranged side by side; the laser first optical path assembly is correspondingly arranged to the laser first light-emitting assembly; the laser second optical path assembly is correspondingly arranged to the laser second light-emitting assembly; the laser first light-emitting assembly and the laser second light-emitting assembly are respectively corresponding to the ingots loaded on the stage assembly 20.

[0023] Furthermore, the laser-optical path assembly includes a laser 41, a laser-optical path shaping device 42, a laser-optical path reflecting device 1 43, and a laser-optical path reflecting device 2 44. The light-emitting end of the laser 41 corresponds to the light-inlet end of the laser-optical path reflecting device 1 43, the light-emitting end of the laser-optical path reflecting device 1 43 corresponds to the light-inlet end of the laser-optical path shaping device 42, the light-emitting end of the laser-optical path shaping device 42 corresponds to the light-inlet end of the laser-optical path reflecting device 2 44, and the light-emitting end of the laser-optical path reflecting device 2 44 corresponds to the light-inlet end of the laser-emitting assembly. With this configuration, the laser 41 emits a laser beam, which is reflected by the laser-optical path reflecting device 1 43 to the laser-optical path shaping device 42 for beam shaping, and then reflected by the laser-optical path reflecting device 2 44 to the laser-emitting assembly for scanning and processing of the crystal ingot.

[0024] Furthermore, the laser light-emitting assembly includes a laser lifting Z-axis fixing plate 51, a laser lifting Z-axis motor 52, and a laser lifting shaping optical path device 54. The laser lifting Z-axis fixing plate 51 is vertically equipped with a laser lifting Z-axis guide rail 53. The laser lifting shaping optical path device 54 is slidably connected to the laser lifting Z-axis guide rail 53. The laser lifting Z-axis motor 52 drives the laser lifting shaping optical path device 54 to move up and down. The light-emitting end of the laser optical path reflection device 44 is correspondingly positioned at the upper end of the laser lifting shaping optical path device 54. The lower end of the laser lifting shaping optical path device 54 is equipped with a laser-shaped light-emitting position 511 and a laser-following height meter 55. This configuration allows the laser lifting Z-axis motor 52 to drive the laser lifting shaping optical path device 54 to move up and down, thereby adjusting the required height of the laser-shaped light-emitting position 511.

[0025] Furthermore, the laser dual-path assembly includes a second laser 45, a first laser dual-path reflection device 46, a second laser dual-path shaping device 47, and a second laser dual-path reflection device 48. The light-emitting end of the second laser 45 corresponds to the light-inlet end of the first laser dual-path reflection device 46, the light-emitting end of the first laser dual-path reflection device 46 corresponds to the light-inlet end of the second laser dual-path shaping device 47, the light-emitting end of the second laser dual-path shaping device 47 corresponds to the light-inlet end of the second laser dual-path reflection device 48, and the light-emitting end of the second laser dual-path reflection device 48 corresponds to the second laser light-emitting assembly. With this configuration, the second laser 45 emits a laser beam, which is reflected by the first laser dual-path reflection device 46 to the second laser dual-path shaping device 47 for beam shaping, and then reflected by the second laser dual-path reflection device 48 to the second laser light-emitting assembly for scanning and processing of the crystal ingot.

[0026] Furthermore, the laser secondary light-emitting assembly includes a laser secondary lifting Z-axis fixing plate 57, a laser secondary lifting Z-axis motor 58, and a laser secondary lifting shaping optical path device 59. The laser secondary lifting Z-axis fixing plate 57 is vertically equipped with a laser secondary lifting Z-axis guide rail 56. The laser secondary lifting shaping optical path device 59 is slidably connected to the laser secondary lifting Z-axis guide rail 56. The laser secondary lifting Z-axis motor 58 drives the laser secondary lifting shaping optical path device 59 to rise and fall. The light-emitting end of the laser secondary optical path reflection device 48 is correspondingly positioned at the upper end of the laser secondary lifting shaping optical path device 59. The lower end of the laser secondary lifting shaping optical path device 59 is equipped with a laser secondary following height meter 510 and a laser secondary shaped light-emitting position 512. This configuration allows the laser secondary lifting Z-axis motor 58 to drive the laser secondary lifting shaping optical path device 59 to rise and fall, thereby adjusting the required height of the laser secondary shaped light-emitting position 512.

[0027] Furthermore, the stage assembly 20 includes an X-axis linear motion platform 21, a Y-axis linear motion platform 22, a DD direct-drive rotary motor 23, a ceramic adsorption stage 24, and a laser power meter 25. The X-axis linear motion platform 21 is movably mounted on the base 10, and the Y-axis linear motion platform 22 is movably mounted on the X-axis linear motion platform 21. The DD direct-drive rotary motor 23 and the laser power meter 25 are mounted on the Y-axis linear motion platform 22. The output end of the DD direct-drive rotary motor 23 is connected to the ceramic adsorption stage 24 for driving and fixing the crystal ingot. With this configuration, when the X-axis linear motion platform 21 is working, it drives the Y-axis linear motion platform 22 to move, thereby adjusting the X-axis position of the ceramic adsorption stage 24. When the Y-axis linear motion platform 22 is working, it adjusts the Y-axis position of the ceramic adsorption stage 24. When the DD direct-drive rotary motor 23 is working, it adjusts the rotation of the ceramic adsorption stage 24 to adjust the angular position of the crystal ingot.

[0028] When the crystal ingot is located below the laser light-emitting component, the X-axis linear motion platform 21 moves the crystal ingot along the X-axis direction, and the laser light-emitting component scans and processes the crystal ingot along the X-axis direction; the Y-axis linear motion platform 22 moves the crystal ingot along the Y-axis direction, and the laser light-emitting component scans and processes the crystal ingot along the Y-axis direction.

[0029] Furthermore, a height measuring instrument assembly 30 is mounted on the front end of the frame 11. The height measuring instrument assembly 30 is located on one side of the dual laser head assembly 50 and above the stage assembly 20. The height measuring instrument assembly 30 includes a resistivity tester 31, a height measuring instrument 32, and a resistivity tester Z-axis motor 33, which drives the resistivity tester 31 and the height measuring instrument 32 to move up and down. This configuration allows the height measuring instrument assembly 30 to be used to test the height of the crystal ingot.

[0030] Furthermore, the dual laser head assembly 50 is equipped with a visual positioning assembly 60, which includes a first visual positioning focusing lens 61 and a second visual positioning focusing lens 62 arranged side by side. This configuration allows the visual positioning assembly 60 to be used for positioning and photographing the crystal ingot.

[0031] Furthermore, the base 10 includes an upper base and a lower base, the frame 11 is fixed on the upper base, the upper base is fixed on the lower base, and the bottom of the lower base is provided with multiple positioning feet; the upper base is made of marble.

[0032] Working principle of this utility model: The crystal ingot is placed on the ceramic adsorption stage 24, and the ceramic adsorption stage 24 is used to adsorb and fix the crystal ingot by evacuation. The stage assembly 20 is controlled to adjust its position so that the crystal ingot is moved below the height measuring instrument assembly 30. The height measuring instrument assembly 30 measures the height and resistivity of the crystal ingot, and then the dual laser head assembly 50 adjusts its height position. The vision positioning assembly 60 positions and photographs the crystal ingot. The position of the stage assembly 20 is adjusted so that the crystal ingot is moved below the light emission position of the dual laser head assembly 50. The dual laser optical path assembly 40 is controlled to work and emit a laser beam. The laser beam passes through the dual laser head assembly 50 and scans the inside of the crystal ingot. During processing, the X-axis linear motion platform 21 moves a specified distance, and the Y-axis linear motion platform 22 moves the crystal ingot. The crystal ingot is scanned and processed by laser one and laser two in sequence. At the same time, the ceramic adsorption stage 24 can be driven by the DD direct drive rotary motor 23 to rotate the crystal ingot in different directions, which improves the scanning and anchoring processing effect.

[0033] Preferably, this invention can also achieve automatic switching between laser one and laser two for modified cutting and extended crack cutting through automatic switching of the shaping optical path and laser parameters; when the X-axis linear motion platform 21 moves a specified distance and the Y-axis linear motion platform 22 moves, it first passes through the modified laser scanning interior of laser one, and then passes through the extended crack laser scanning interior of laser two. Before laser one passes through the Y-axis linear motion platform 22, the parameters of laser one are automatically adjusted to modified laser parameters and the shaping optical path of laser one is automatically switched to the corresponding modified shaping spot. Before laser two passes through the Y-axis linear motion platform 22, the parameters of laser two are automatically adjusted to extended crack laser parameters and the shaping optical path of laser two is automatically switched to the corresponding shaping extended crack spot. The first pass of the Y-axis linear motion platform 22... Laser 1 and Laser 2 enable sequential laser scanning for modification and crack propagation on the ingot. When the Y-axis linear motion platform 22 moves in the opposite direction, it first passes Laser 2 and then Laser 1. Before passing Laser 2, the parameters of Laser 2 are automatically adjusted to modification laser parameters, and the laser 2 shaping optical path is automatically switched to the corresponding modification shaping spot. The parameters of Laser 1 are automatically adjusted to crack propagation laser parameters, and the laser 1 shaping optical path is automatically switched to the crack propagation spot. During the second pass of the Y-axis linear motion platform 22, passing Laser 2 and Laser 1, sequential laser scanning for modification and crack propagation on the ingot is achieved. This cycle is repeated to sequentially perform laser scanning for modification and crack propagation on the ingot, thereby peeling off the wafer from the ingot. Preferably, in addition to enabling automatic switching of laser parameters and shaping of the laser spot between laser one and laser two, this invention can also add a laser cutting head that is parallel to the original dual laser heads on a straight line, namely laser two on the left, laser one in the middle, and laser two on the right. Laser one is a modification laser, and lasers two are both crack-expanding lasers. This allows for reciprocating cutting of the ingot using modification laser scanning and crack-expanding laser scanning. The Y-axis linear motion platform 22 is parallel to the left laser two, the middle laser one, and the right laser two. The X-axis linear motion platform 21 moves a specified distance, and the Y-axis linear motion platform 22 starts moving. The left laser 2 is not activated initially; only the middle laser 1 and the right laser 2 are activated. The Y-axis linear motion platform 22 first passes through the middle laser 1 to scan the interior of the modified laser, and then passes through the right laser 2 to scan the interior of the extended crack laser. When the Y-axis linear motion platform 22 moves in the opposite direction, the right laser 2 is not activated initially; only the middle laser 1 and the left laser 2 are activated. The Y-axis linear motion platform 22 first passes through the middle laser 1 to scan the interior of the modified laser, and then passes through the left laser 2 to scan the interior of the extended crack laser. This cycle is repeated to perform modified laser and extended crack laser scanning on the ingot, thereby peeling off the wafer from the ingot. Preferably, the first laser is a refining laser, which is generally a laser beam transparent to the ingot, used to form a uniform refining layer inside the ingot. The refining layer refers to amorphous silicon formed by the absorption of short-pulse laser by the silicon carbide lattice, a mixture of amorphous silicon and amorphous silicide, which is different from other areas of the silicon carbide single crystal ingot; the second laser is a crack propagation laser, which uses laser parameters that strongly absorb the refining layer but weakly absorb other areas, used to cause the refining layer to absorb heat and expand, generating stress and forming cracks. The difference in laser parameters between laser one and laser two can be one or a combination of several of the following: laser wavelength, laser pulse width, laser single-pulse flux, laser frequency, laser energy distribution, and laser focusing depth. For this invention, if the laser and the processing and shaping optical path have the ability to switch between laser one and laser two, dual lasers can be used to achieve the functions of this invention, such as switching parameters like laser pulse width, laser single-pulse flux, laser frequency, laser energy distribution, and laser focusing depth. If switching between laser one and laser two is costly, such as switching the laser wavelength, a three-laser-head solution can be used to achieve the dual-laser simultaneous processing function described in this invention.

[0034] The embodiments of the present utility model have been described above with reference to the accompanying drawings. However, the present utility model is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present utility model without departing from the spirit and scope of the claims. All of these forms are within the scope of protection of the present utility model.

Claims

1. A crystal ingot dual-laser head stripping device, characterized in that: It includes a base (10) and a frame (11), wherein the frame (11) is fixed on the base (10); The top of the frame (11) is equipped with a dual laser optical path assembly (40), and the front end of the frame (11) is equipped with a dual laser head assembly (50). The dual laser optical path assembly (40) and the dual laser head assembly (50) are respectively arranged at their upper ends. The base (10) is movably provided with a stage assembly (20) for loading crystal ingots. The stage assembly (20) is located below the dual laser head assembly (50). The lower end of the dual laser head assembly (50) is correspondingly set with the crystal ingot on the stage assembly (20). The stage assembly (20) can be linearly displaced along the X-axis and Y-axis of the base (10) to adjust the position of the ingot relative to the lower end of the dual laser head assembly (50).

2. The ingot dual-laser head stripping device according to claim 1, characterized in that: The dual laser optical path assembly (40) includes a laser first optical path assembly and a laser second optical path assembly arranged side by side; the dual laser head assembly (50) includes a laser first light-emitting assembly and a laser second light-emitting assembly arranged side by side; the laser first optical path assembly is arranged corresponding to the laser first light-emitting assembly; the laser second optical path assembly is arranged corresponding to the laser second light-emitting assembly; the laser first light-emitting assembly and the laser second light-emitting assembly are respectively arranged corresponding to the ingots loaded on the stage assembly (20).

3. The ingot dual-laser-head stripping device according to claim 2, characterized in that: The laser-optical path assembly includes a laser (41), a laser-optical path shaping device (42), a laser-optical path reflecting device one (43), and a laser-optical path reflecting device two (44). The light-emitting end of the laser (41) is correspondingly set to the light-inlet end of the laser-optical path reflecting device one (43), the light-emitting end of the laser-optical path reflecting device one (43) is correspondingly set to the light-inlet end of the laser-optical path shaping device (42), the light-emitting end of the laser-optical path shaping device (42) is correspondingly set to the light-inlet end of the laser-optical path reflecting device two (44), and the light-emitting end of the laser-optical path reflecting device two (44) is correspondingly set to the light-inlet end of the laser-emitting assembly.

4. The ingot dual-laser-head stripping device according to claim 3, characterized in that: The laser-emitting component includes a laser-lifting Z-axis fixing plate (51), a laser-lifting Z-axis motor (52), and a laser-lifting shaping optical path device (54). The laser-lifting Z-axis fixing plate (51) is vertically provided with a laser-lifting Z-axis guide rail (53). The laser-lifting shaping optical path device (54) is slidably connected to the laser-lifting Z-axis guide rail (53). The laser-lifting Z-axis motor (52) is used to drive the laser-lifting shaping optical path device (54) to lift. The light-emitting end of the laser-light-reflecting device (44) is correspondingly provided with the upper end of the laser-lifting shaping optical path device (54). The lower end of the laser-lifting shaping optical path device (54) is provided with a laser-shaping post-emitting position (511) and a laser-following height measuring instrument (55).

5. The ingot dual-laser-head stripping device according to claim 2, characterized in that: The laser two-path assembly includes a laser two laser (45), a laser two-path reflection device one (46), a laser two-path shaping device (47), and a laser two-path reflection device two (48). The light-emitting end of the laser two laser (45) is correspondingly set to the light-inlet end of the laser two-path reflection device one (46), the light-emitting end of the laser two-path reflection device one (46) is correspondingly set to the light-inlet end of the laser two-path shaping device (47), the light-emitting end of the laser two-path shaping device (47) is correspondingly set to the light-inlet end of the laser two-path reflection device two (48), and the light-emitting end of the laser two-path reflection device two (48) is correspondingly set to the laser two light-emitting assembly.

6. The ingot dual-laser-head stripping device according to claim 5, characterized in that: The laser two-stage light-emitting assembly includes a laser two-stage lifting Z-axis fixing plate (57), a laser two-stage lifting Z-axis motor (58), and a laser two-stage lifting shaping optical path device (59). The laser two-stage lifting Z-axis fixing plate (57) is vertically provided with a laser two-stage lifting Z-axis guide rail (56). The laser two-stage lifting shaping optical path device (59) is slidably connected to the laser two-stage lifting Z-axis guide rail (56). The laser two-stage lifting Z-axis motor (58) is used to drive the laser two-stage lifting shaping optical path device (59) to rise and fall. The light-emitting end of the laser two-stage optical path reflection device (48) is correspondingly set at the upper end of the laser two-stage lifting shaping optical path device (59). The lower end of the laser two-stage lifting shaping optical path device (59) is provided with a laser two-stage following height measuring instrument (510) and a laser two-stage shaping light-emitting position (512).

7. The ingot dual-laser head stripping device according to claim 2, characterized in that: The stage assembly (20) includes an X-axis linear motion platform (21), a Y-axis linear motion platform (22), a DD direct drive rotary motor (23), a ceramic adsorption stage (24), and a laser power meter (25). The X-axis linear motion platform (21) is movably mounted on the base (10), and the Y-axis linear motion platform (22) is movably mounted on the X-axis linear motion platform (21). The DD direct drive rotary motor (23) and the laser power meter (25) are mounted on the Y-axis linear motion platform (22). The output end of the DD direct drive rotary motor (23) is driven and connected to the ceramic adsorption stage (24). The ceramic adsorption stage (24) is used to load and fix the crystal ingot.

8. The ingot dual-laser head stripping device according to claim 2, characterized in that: The frame (11) is equipped with a height measuring instrument assembly (30) at the front end. The height measuring instrument assembly (30) is located on one side of the dual laser head assembly (50) and above the platform assembly (20). The height measuring instrument assembly (30) includes a resistivity tester (31), a height measuring instrument (32), and a resistivity tester Z-axis motor (33). The resistivity tester Z-axis motor (33) is used to drive the resistivity tester (31) and the height measuring instrument (32) to rise and fall.

9. A crystal ingot dual-laser head stripping device according to claim 2, characterized in that: The dual laser head assembly (50) is equipped with a visual positioning assembly (60), which includes a visual positioning focusing lens one (61) and a visual positioning focusing lens two (62) arranged side by side.

10. A crystal ingot dual-laser head stripping device according to claim 1, characterized in that: The base (10) includes an upper base and a lower base. The frame (11) is fixed on the upper base, and the upper base is fixed on the lower base. The bottom of the lower base is provided with multiple positioning feet. The upper base is made of marble.

Citation Information

Patent Citations

  • Crystal ingot stripping device

    CN223492326U