Magnetron sputter coating apparatus

Abstract

The application provides a magnetron sputtering coating device, and relates to the technical field of vacuum sputtering coating. The magnetron sputtering coating device comprises: a plurality of vacuum coating chambers arranged in sequence; a transition vacuum chamber arranged at the substrate input end and the substrate output end of the vacuum coating chamber; and a differential pumping system connected with the transition vacuum chamber, wherein the differential pumping system is used for maintaining the vacuum degree in the transition vacuum chamber within a set threshold range, so as to inhibit the gas channeling between two adjacent vacuum coating chambers. The magnetron sputtering coating device provided by the application ensures that the process environment of each vacuum coating chamber is highly independent, and cross contamination caused by mutual channeling of reaction gas or sputtering material is avoided.

Description

Technical Field

[0001] This application relates to the field of vacuum sputtering coating technology, and more particularly to a magnetron sputtering coating device. Background Technology

[0002] Magnetron sputtering coating equipment is widely used in the fields of flexible electronics, new energy batteries, optical devices and advanced materials manufacturing.

[0003] Existing magnetron sputtering equipment mostly adopts a single-chamber or multi-chamber series structure, with adjacent chambers usually connected by ordinary valves or short transition pipes.

[0004] However, insufficient vacuum isolation between chambers can easily lead to cross-contamination of process gases and vaporized sputtered materials between different chambers, resulting in a decrease in film purity, deterioration of interface properties, and ultimately affecting product performance and yield. Utility Model Content

[0005] In view of the above problems, this application provides a magnetron sputtering coating equipment to solve the problem of gas cross-flow between adjacent chambers caused by insufficient vacuum isolation capability in the multilayer film deposition process of existing magnetron sputtering equipment, which leads to cross-contamination of sputtered materials.

[0006] To achieve the above objectives, the embodiments of this application provide the following technical solutions:

[0007] This application provides a magnetron sputtering coating apparatus, comprising:

[0008] Multiple vacuum coating chambers arranged in sequence;

[0009] A transition vacuum chamber is located at the substrate input end and substrate output end of the vacuum coating chamber;

[0010] The differential pumping system is connected to the transition vacuum chamber. The differential pumping system is used to maintain the vacuum level in the transition vacuum chamber within a set threshold range, thereby suppressing gas cross-flow between two adjacent vacuum coating chambers.

[0011] In one possible implementation, the differential pumping system includes a turbomolecular pump and a Roots pump, with the turbomolecular pump connected to a transition vacuum chamber and the turbomolecular pump and the Roots pump connected in series to form a multi-stage pumping channel.

[0012] In one possible implementation, the differential pumping system further includes a cryogenic trap, which is disposed in the airflow channel of the differential pumping system and connected in series with the turbomolecular pump and the Roots pump.

[0013] In one possible implementation, the transition vacuum chamber includes a first transition vacuum chamber and a second transition vacuum chamber, which are connected in series.

[0014] In one possible implementation, the first transition vacuum chamber is equipped with a first vacuum pumping interface, and the second transition vacuum chamber is equipped with a second vacuum pumping interface. Both the first and second vacuum pumping interfaces are connected to the differential pumping system.

[0015] In one possible implementation, a first isolation baffle is provided in the transition vacuum chamber, and the first isolation baffle is disposed between the first transition vacuum chamber and the second transition vacuum chamber.

[0016] A first connecting channel is provided on the first isolation baffle, which is used to connect the first transition vacuum chamber and the second transition vacuum chamber in series.

[0017] In one possible implementation, a second isolation baffle is provided between the transition vacuum chamber and the vacuum coating chamber;

[0018] The second isolation baffle has a second connecting channel, which is used to connect the transition vacuum chamber and the vacuum coating chamber.

[0019] In one possible implementation, a first magnetic fluid sealing roller is provided on each side of the first connecting channel, and a portion of the cylindrical surface of the first magnetic fluid sealing roller extends into the first connecting channel to form a narrow gap for the substrate to pass through together with another first magnetic fluid sealing roller provided opposite to it.

[0020] A second magnetic fluid sealing roller is provided on each side of the second connecting channel. A portion of the cylindrical surface of the second magnetic fluid sealing roller extends into the second connecting channel to form a narrow gap for the substrate to pass through together with another second magnetic fluid sealing roller provided opposite to it.

[0021] In one possible implementation, each vacuum coating chamber is equipped with a third vacuum port, which is connected to a differential pumping system.

[0022] In one possible implementation, the magnetron sputtering coating apparatus further includes:

[0023] Sputtering power supply and roll speed controller;

[0024] The film thickness monitoring module is located at the substrate output end of the vacuum coating chamber. The film thickness monitoring module is used to monitor the film thickness at the substrate output end of the vacuum coating chamber in real time.

[0025] The control module is electrically and / or communicatively connected to the film thickness monitoring module, sputtering power supply, and roll speed controller.

[0026] The magnetron sputtering coating equipment provided in this application embodiment has a transition vacuum chamber at both the substrate input and output ends of each vacuum coating chamber. A differential pumping system is connected to the transition vacuum chamber, establishing a stable vacuum gradient between adjacent vacuum coating chambers, thereby effectively reducing the net diffusion rate of gas molecules. The transition vacuum chamber provides physical isolation, while the differential pumping system actively pumps gas from it. This combination achieves dynamic balance: even if gas leaks from one vacuum coating chamber into the transition vacuum chamber, the differential pumping system can immediately expel the gas, preventing further cross-contamination to the other vacuum coating chamber. This ensures a highly independent process environment for each vacuum coating chamber, avoiding cross-contamination caused by the mixing of reactive gases or sputtered materials. Because gas cross-contamination is effectively suppressed, the sputtering process in each vacuum coating chamber is more stable. The plasma is not disturbed by gas fluctuations in adjacent chambers, ensuring film deposition rate and uniformity. This ensures the equipment can continuously produce high-performance, highly consistent multilayer film products, effectively improving yield.

[0027] In addition to the technical problems solved by the embodiments of this application, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions described above, other technical problems that can be solved by the magnetron sputtering coating equipment provided by the embodiments of this application, other technical features included in the technical solutions, and the beneficial effects brought about by these technical features will be further explained in detail in the specific implementation. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram illustrating the working principle of the magnetron sputtering coating equipment provided in the embodiments of this application;

[0030] Figure 2 for Figure 1 The diagram shows the structure of the transition vacuum chamber and the differential pumping system.

[0031] Figure 3 for Figure 1 The diagram shows the structure of the vacuum coating chamber and the differential pumping system.

[0032] Figure 4 for Figure 3 The diagram shows the installation of the film thickness monitoring module inside the vacuum coating chamber.

[0033] Figure 5 A schematic diagram of the film thickness control device of the magnetron sputtering coating equipment provided in this application embodiment.

[0034] Explanation of reference numerals in the attached figures:

[0035] 10. Vacuum coating chamber; 101. Third vacuum port; 11. Target material;

[0036] 20. Transition vacuum chamber; 201. First transition vacuum chamber; 202. Second transition vacuum chamber; 203. First vacuum port; 204. Second vacuum port; 21. First isolation baffle; 211. First connecting channel; 22. Second isolation baffle; 221. Second connecting channel; 23. First magnetic fluid sealing roller shaft; 24. Second magnetic fluid sealing roller shaft;

[0037] 30. Differential pumping system; 31. Turbomolecular pump; 32. Roots pump; 33. Cryogenic trap;

[0038] 40. Control module; 41. Sputtering power supply; 42. Roll speed controller; 43. Film thickness monitoring module;

[0039] 51. Unwinding vacuum chamber; 52. Rewinding vacuum chamber;

[0040] 61. Passing roller; 62. Cooling roller. Detailed Implementation

[0041] First, those skilled in the art should understand that these embodiments are merely for explaining the technical principles of this application and are not intended to limit the scope of protection of this application. Those skilled in the art can make adjustments as needed to adapt to specific application scenarios.

[0042] Secondly, it should be noted that, in the description of the embodiments of this application, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0043] As described in the background section, magnetron sputtering equipment in related technologies suffers from insufficient vacuum isolation during multilayer film deposition, leading to gas cross-flow between adjacent chambers and cross-contamination of sputtered materials.

[0044] To address the aforementioned technical problems, this application provides a magnetron sputtering coating apparatus, comprising: a plurality of vacuum coating chambers arranged in sequence; a transition vacuum chamber disposed at the substrate input end and substrate output end of the vacuum coating chambers; and a differential pumping system connected to the transition vacuum chambers. The differential pumping system is used to maintain the vacuum level in the transition vacuum chambers within a set threshold range, thereby suppressing gas cross-flow between adjacent vacuum coating chambers.

[0045] The magnetron sputtering coating equipment provided in this application embodiment has a transition vacuum chamber at both the substrate input and output ends of each vacuum coating chamber. A differential pumping system is connected to the transition vacuum chamber, establishing a stable vacuum gradient between adjacent vacuum coating chambers, thereby effectively reducing the net diffusion rate of gas molecules. The transition vacuum chamber provides physical isolation, while the differential pumping system actively pumps gas from it. This combination achieves dynamic balance: even if gas leaks from one vacuum coating chamber into the transition vacuum chamber, the differential pumping system can immediately expel the gas, preventing further cross-contamination to the other vacuum coating chamber. This ensures a highly independent process environment for each vacuum coating chamber, avoiding cross-contamination caused by the mixing of reactive gases or sputtered materials. Because gas cross-contamination is effectively suppressed, the sputtering process in each vacuum coating chamber is more stable. The plasma is not disturbed by gas fluctuations in adjacent chambers, ensuring film deposition rate and uniformity. This ensures the equipment can continuously produce high-performance, highly consistent multilayer film products, effectively improving yield.

[0046] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0047] Please refer to the attached document. Figure 1-5 This application provides a magnetron sputtering coating apparatus, comprising:

[0048] Multiple vacuum coating chambers 10 arranged in sequence;

[0049] Transition vacuum chamber 20 is disposed at the substrate input end and substrate output end of vacuum coating chamber 10;

[0050] The differential pumping system 30 is connected to the transition vacuum chamber 20. The differential pumping system 30 is used to maintain the vacuum level in the transition vacuum chamber 20 within a set threshold range, thereby suppressing gas cross-flow between two adjacent vacuum coating chambers 10.

[0051] It should be noted that, please refer to Figure 1 As shown, the "substrate input end" in the text refers to the inlet side of the vacuum coating chamber 10 through which the substrate passes before entering the vacuum coating chamber 10 for coating. The "substrate output end" in the text refers to the outlet side of the vacuum coating chamber 10 from which the substrate leaves after the coating is completed in the vacuum coating chamber 10.

[0052] In this embodiment of the application, please refer to Figure 1 As shown, the magnetron sputtering coating equipment includes multiple vacuum coating chambers 10 arranged sequentially, with each chamber 10 independently configured. This allows the magnetron sputtering coating equipment to continuously deposit multilayer film structures in a single process flow. Each vacuum coating chamber 10 can be independently configured with different sputtering targets and process parameters (such as gas atmosphere) specifically for depositing films with specific functions (such as conductive layers or barrier layers). This layout avoids the need for multiple film penetrations or chamber switching in traditional equipment, thereby improving production efficiency and reducing the risk of contamination introduced by substrate exposure to the atmosphere. Simultaneously, the independent performance of each vacuum coating chamber 10 ensures optimized deposition conditions for each film layer, improving film performance.

[0053] In this embodiment of the application, please refer to Figure 1 As shown, the transition vacuum chamber 20 is disposed at the substrate input end and substrate output end of the vacuum coating chamber 10. The transition vacuum chamber 20 serves as a physical buffer and isolation zone, directly located between two adjacent vacuum coating chambers 10. By providing additional spatial distance through the transition vacuum chamber 20, the path length for gas molecules to migrate between the vacuum coating chambers 10 is extended. This physically attenuates the intensity of gas cross-flow between two adjacent vacuum coating chambers 10. Furthermore, the transition vacuum chamber 20 provides a stable vacuum transition environment for substrate transport, preventing film damage or deformation due to pressure changes when the substrate enters or exits the vacuum coating chamber 10. This design reduces the risk of direct diffusion of process gases between adjacent vacuum coating chambers 10.

[0054] In this embodiment of the application, please refer to Figure 1As shown, the differential pumping system 30 is connected to the transition vacuum chamber 20, thereby maintaining the vacuum level within the transition vacuum chamber 20 within a set threshold range. The differential pumping system 30 actively and continuously pumps air to precisely control the vacuum level of the transition vacuum chamber 20, stabilizing it within a preset threshold range (e.g., between the vacuum levels of two adjacent vacuum coating chambers 10). This active control enables dynamic gas management: when gas seeps from the vacuum coating chamber 10 into the transition vacuum chamber 20, the differential pumping system 30 quickly removes the gas, preventing gas accumulation and ensuring that the vacuum difference between adjacent chambers remains within a set threshold range (e.g., less than or equal to 5%). This weakens the driving force (i.e., pressure difference) of gas crossflow, ensuring that the transition vacuum chamber 20 always acts as a highly efficient gas "trap," thereby suppressing gas crossflow between the vacuum coating chambers 10 in real time.

[0055] The magnetron sputtering coating equipment provided in this application embodiment has a transition vacuum chamber 20 at both the substrate input end and the substrate output end of each vacuum coating chamber 10. By connecting the differential pumping system 30 to the transition vacuum chamber 20, a smooth vacuum gradient is established between two adjacent vacuum coating chambers 10 (for example, in two adjacent vacuum coating chambers 10, if the vacuum degree of one of the vacuum coating chambers 10 is 10...). -3 Pa, while the vacuum level of the other vacuum coating chamber 10 is 10. -3 The differential pumping system can maintain the vacuum level of the transition chamber at 10 Pa. -2 The difference is ≤5% (approximately Pa), effectively reducing the net diffusion rate of gas molecules. The transition vacuum chamber 20 provides a physically isolated space, while the differential pumping system 30 actively pumps gas from the transition vacuum chamber 20. This combination achieves dynamic equilibrium: even if gas leaks from one side of the vacuum coating chamber 10 into the transition vacuum chamber 20, the differential pumping system 30 can immediately expel the gas, preventing it from continuing to flow into the other side of the vacuum coating chamber 10. This ensures that the process environment (such as gas composition and pressure) of each vacuum coating chamber 10 is highly independent, avoiding cross-contamination caused by the cross-flow of reactive gases (such as O2, N2) or sputtering materials. Because gas cross-flow is effectively suppressed, the sputtering process in each vacuum coating chamber 10 is more stable. The plasma is not disturbed by gas fluctuations in adjacent chambers, ensuring the film deposition rate and uniformity. This ensures that the equipment can continuously produce high-performance, highly consistent multilayer film products, effectively improving the yield.

[0056] Further, please see Figure 1As shown in the embodiments of this application, the magnetron sputtering coating equipment further includes an unwinding vacuum chamber 51 and a winding vacuum chamber 52. The unwinding vacuum chamber 51 is located at the beginning of the entire magnetron sputtering coating equipment production line. An unwinding mechanism is installed within the unwinding vacuum chamber 51 to carry the substrate roll to be coated (such as PET / PI film or metal foil). The roll typically has a high-precision servo motor or magnetic powder clutch to control the unwinding speed. The winding vacuum chamber 52 is located at the end of the entire magnetron sputtering coating equipment production line. A winding mechanism is installed within the winding vacuum chamber 52, driven by a high-precision servo motor, to wind the coated substrate into a roll at a constant linear speed or tension.

[0057] Further, please see Figure 1 As shown, the substrate output end of the unwinding vacuum chamber 51 can be connected to the substrate input end of the first vacuum coating chamber 10 through a transition vacuum chamber 20; the substrate input end of the winding vacuum chamber 52 can be connected to the substrate output end of the last vacuum coating chamber 10 through a transition vacuum chamber 20.

[0058] Furthermore, the unwinding vacuum chamber 51 can be integrated with an unwinding tension control system (including a tension sensor and a braking device) to provide initial and stable tension for the substrate; the unwinding vacuum chamber 51 can also be equipped with a correction system to preliminarily correct the lateral position of the substrate before it enters the vacuum coating chamber 10, ensuring that the substrate enters the subsequent stages in the correct position.

[0059] Furthermore, a winding tension control system can be integrated into the winding vacuum chamber 52 to ensure that appropriate tension is maintained during the winding process, making the roll material tight and flat.

[0060] Furthermore, before winding, a final film thickness or surface defect detector can be set up to conduct online inspection of the finished product.

[0061] Furthermore, since the substrate may accumulate heat after passing through multiple vacuum coating chambers 10, the pass roll and take-up roll in the take-up vacuum chamber 52 can be equipped with a built-in cooling system (such as water cooling) to ensure that the temperature of the substrate drops to a safe range before take-up, preventing thermal stress from causing material deformation or film damage.

[0062] In one possible implementation, please see Figure 2 As shown, the differential pumping system 30 includes a turbomolecular pump 31 and a Roots pump 32. The turbomolecular pump 31 is connected to the transition vacuum chamber 20, and the turbomolecular pump 31 and the Roots pump 32 are connected in series to form a multi-stage pumping channel.

[0063] In this embodiment, the turbomolecular pump 31 exhibits high and stable pumping speeds for both permanent gases (such as nitrogen (N2) and oxygen (O2)) and inert gases (such as argon (Ar), and can easily maintain the vacuum level at or even higher than the vacuum pressure required by the main process. By connecting the turbomolecular pump 31 to the transition vacuum chamber 20, process gases (such as Ar, O2, and N2) that have leaked from the adjacent vacuum coating chamber 10 can be directly and efficiently pumped out. The Roots pump 32, with its high pumping speed in the medium vacuum region, can quickly remove the gas discharged from the outlet of the turbomolecular pump 31, always maintaining the outlet pressure of the turbomolecular pump 31 within its efficient operating range (ideal low forestage pressure). Simultaneously, the turbomolecular pump 31 can operate efficiently at the high vacuum end (inlet). Thus, the differential pumping system 30 can achieve effective pumping at the high vacuum end (transition vacuum chamber 20) and also obtain a high pumping speed throughout the entire process from low to high vacuum.

[0064] When the equipment starts up or the process gas fluctuates, the transition vacuum chamber 20 may experience a large gas load. The Roots pump 32 can quickly handle large flow rates of gas and works in conjunction with the turbomolecular pump 31 to reduce the vacuum level of the transition vacuum chamber 20 from a higher pressure to the operating pressure in a very short time, thereby effectively improving pumping efficiency and achieving rapid pressure drop and dynamic response.

[0065] In one possible implementation, please see Figure 2 As shown, the differential pumping system 30 also includes a cryogenic trap 33, which is disposed in the airflow channel of the differential pumping system 30 and connected in series with the turbomolecular pump 31 and the Roots pump 32.

[0066] In this embodiment, a cryogenic trap 33 is installed in the airflow channel of the differential pumping system 30, and the cryogenic trap 33 is connected in series with the turbomolecular pump 31 and the Roots pump 32, thereby forming a pumping path of transition vacuum chamber 20 → turbomolecular pump 31 → cryogenic trap 33 → Roots pump 32. The cryogenic trap 33 can accurately intercept and permanently capture high-boiling-point, easily condensable residual gases such as water vapor and hydrocarbons in the airflow channel, effectively improving the vacuum cleanliness of the transition vacuum chamber 20 and the vacuum coating chamber 10, making the plasma discharge more stable, and reducing the interference of impurity gases during the sputtering process, thus providing a more stable and pure process basis for depositing high-quality, low-defect thin films.

[0067] Furthermore, the cryogenic trap 33 has a metal surface cooled to extremely low temperatures (such as liquid nitrogen at -196 °C or semiconductor cooling below -40 °C). When gas molecules come into contact with this ultracold surface, they lose kinetic energy and freeze on it.

[0068] In one possible implementation, please see Figure 2 As shown, the transition vacuum chamber 20 includes a first transition vacuum chamber 201 and a second transition vacuum chamber 202, which are connected in series.

[0069] In this embodiment, the transition vacuum chamber 20 achieves a dual-transition-chamber series design by setting a first transition vacuum chamber 201 and a second transition vacuum chamber 202. The rate at which gas molecules diffuse from the high-pressure side to the low-pressure side is directly related to the pressure difference. The larger the pressure difference, the stronger the diffusion driving force. By setting two series-connected transition vacuum chambers, a large pressure difference (such as spanning several orders of magnitude) can be decomposed into two or more smaller, more controllable pressure differences. This makes the pressure change between each adjacent region very gradual. When gas molecules cross each small pressure difference, their kinetic energy and diffusion tendency are effectively attenuated. Ultimately, the number of gas molecules that can successfully cross the entire transition zone to reach the other process chamber is reduced exponentially, and gas crosstalk is suppressed more thoroughly.

[0070] The series connection of the two transition chambers in the transition vacuum chamber 20 creates a longer physical isolation channel and a more complex gas flow path. This means that process gases (such as O2, N2) and vaporized sputtered material atoms escaping from one vacuum coating chamber 10 must travel a longer path and experience more collisions to reach the other side. During this process, they have a higher probability of being drawn away by the differential pumping system 30 or adsorbed by the chamber walls, thus preventing them from reaching the other vacuum coating chamber 10. This provides a reliable independent environment for the processes on both sides, ensuring extremely high purity of the film. When the process gas flow rate in one of the process chambers fluctuates, the series connection of the two transition chambers provides a stronger buffer. The fluctuations first affect the first transition chamber before propagating to the second, and their intensity is gradually weakened, thus greatly reducing their interference with the other process chamber.

[0071] In some embodiments, the first transition vacuum chamber 201 and the second transition vacuum chamber 202 can be configured with independent differential pumping systems 30. For example, a pump with a higher pumping speed can be configured for the chamber closer to the high vacuum side, or pumps with different pumping speeds can be set for each chamber to precisely shape the required vacuum gradient. This design avoids the need for a single pump group to handle multiple orders of magnitude of pressure changes simultaneously, allowing each pump to operate within its most efficient operating pressure range, thereby improving overall pumping efficiency, response speed, and system stability.

[0072] In other embodiments, the first transition vacuum chamber 201 and the second transition vacuum chamber 202 can also be configured to share a single differential pumping system 30. That is, two pumping pipes branch off from the inlet of the same differential pumping system 30, and are connected to the first transition vacuum chamber 201 and the second transition vacuum chamber 202 respectively via valves. By adjusting the throttle valves (or valve openings) on the two branch pipes, different airflow resistances can be artificially set for the two transition vacuum chambers. Thus, even using the same pump, different vacuum levels can be formed and maintained in the first transition vacuum chamber 201 and the second transition vacuum chamber 202, establishing the required pressure gradient.

[0073] In one possible implementation, please see Figure 2 As shown, the first transition vacuum chamber 201 is equipped with a first vacuum port 203, and the second transition vacuum chamber 202 is equipped with a second vacuum port 204. Both the first vacuum port 203 and the second vacuum port 204 are connected to the differential pumping system 30.

[0074] In this embodiment, by configuring independent first vacuum ports 203 and 204 for the first transition vacuum chamber 201 and the second transition vacuum chamber 202 respectively, the differential pumping system 30 can independently apply pumping forces of different intensities to the first transition vacuum chamber 201 and the second transition vacuum chamber 202 through the first vacuum ports 203 and 204, thereby actively and precisely maintaining the first transition vacuum chamber 201 and the second transition vacuum chamber 202 at different and better preset vacuum levels. Through independent control, a better intermediate pressure value can be tailored for the intermediate transition vacuum chamber based on the specific working pressure of two adjacent main process chambers. This ensures that the pressure difference between each adjacent region is smaller and better, thereby more effectively suppressing the diffusion dynamics of gas molecules and reducing the possibility of crossflow.

[0075] In one possible implementation, please see Figure 2 As shown, a first isolation baffle 21 is provided in the transition vacuum chamber 20, and the first isolation baffle 21 is disposed between the first transition vacuum chamber 201 and the second transition vacuum chamber 202;

[0076] The first isolation baffle 21 has a first connecting channel 211, which is used to connect the first transition vacuum chamber 201 and the second transition vacuum chamber 202 in series.

[0077] In this embodiment, a first isolation baffle 21 is disposed between the first transition vacuum chamber 201 and the second transition vacuum chamber 202, thereby clearly dividing the transition vacuum chamber 20 into two independent sub-chambers (the first transition vacuum chamber 201 and the second transition vacuum chamber 202). The first isolation baffle 21 acts as a fixed physical barrier, forcibly altering the movement path of gas molecules. Gas molecules can no longer freely diffuse between the first transition vacuum chamber 201 and the second transition vacuum chamber 202, but must instead bypass the first isolation baffle 21, effectively increasing the difficulty and path length of gas crossflow.

[0078] A first connecting channel 211 is formed on the first isolation baffle 21 to connect the first transition vacuum chamber 201 and the second transition vacuum chamber 202 in series. The dimensions (cross-sectional area and length) of the first connecting channel 211 are fixed, which means that the gas conductance (i.e., ventilation capacity) through the first connecting channel 211 is fixed and can be precisely calculated. This provides stable and predictable airflow parameters for the design of the entire differential pumping system 30. Compared to a completely open space, the first connecting channel 211, as a narrow channel, can effectively increase the resistance to gas flow, thereby creating a fixed, high-resistance airflow bottleneck between the first transition vacuum chamber 201 and the second transition vacuum chamber 202.

[0079] If gas molecules want to migrate from one vacuum coating chamber 10 to another, their path is no longer a straight line, but becomes: one vacuum coating chamber 10 → first transition vacuum chamber 201 → first connecting channel 211 → second transition vacuum chamber 202 → another vacuum coating chamber 10. This greatly extends and optimizes the gas migration path, improves isolation reliability, ensures that the process environment (such as gas composition and pressure) of each vacuum coating chamber 10 is highly independent, and avoids cross-contamination caused by the mutual migration of reactive gases (such as O2, N2) or sputtered materials.

[0080] In one possible implementation, please see Figure 2 and Figure 3 As shown, a second isolation baffle 22 is provided between the transition vacuum chamber 20 and the vacuum coating chamber 10;

[0081] The second isolation baffle 22 has a second connecting channel 221, which is used to connect the transition vacuum chamber 20 with the vacuum coating chamber 10.

[0082] In this embodiment, a second isolation baffle 22 is disposed between the transition vacuum chamber 20 and the vacuum coating chamber 10. The second isolation baffle 22 clearly separates the core process area (vacuum coating chamber 10) that needs the most protection from the transition area (transition vacuum chamber 20) that serves as a buffer. This barrier can block the propagation path of gases and contaminants, providing a physical defense for protecting process purity. A second connecting channel 221 is formed on the second isolation baffle 22. The second connecting channel 221 is a precisely designed and controlled process channel that can accurately control the gas flow from the transition area into the process area. The size of the second connecting channel 221 on the second isolation baffle 22 is much smaller than the cross-section of the chamber, forming a huge airflow resistance. This allows the differential pumping system 30 to maintain an extremely high pumping speed near the narrow channel opening with a relatively small pumping rate. Even if there are slight pressure fluctuations in the transition vacuum chamber 20, they will be effectively attenuated by the large flow resistance of the second connecting channel 221, thereby ensuring that the core sputtering area inside the vacuum coating chamber 10 has a more stable and clean high vacuum environment, ensuring the uniformity and stability of the plasma, and improving the quality of the film.

[0083] In one possible implementation, please see Figure 2 As shown, a first magnetic fluid sealing roller 23 is provided on both sides of the first connecting channel 211. A portion of the cylindrical surface of the first magnetic fluid sealing roller 23 extends into the first connecting channel 211, so as to form a narrow gap for the substrate to pass through together with another first magnetic fluid sealing roller 23 arranged opposite to it.

[0084] A second magnetic fluid sealing roller 24 is provided on both sides of the second connecting channel 221. A portion of the cylindrical surface of the second magnetic fluid sealing roller 24 extends into the second connecting channel 221 to form a narrow gap for the substrate to pass through together with another second magnetic fluid sealing roller 24 arranged opposite to it.

[0085] In this embodiment, by providing first magnetohydrodynamic sealing rollers 23 on both sides of the first connecting channel 211 and second magnetohydrodynamic sealing rollers 24 on both sides of the second connecting channel 221, a dynamic seal with zero wear and zero leakage is achieved by forming a liquid sealing ring constrained by a magnetic field between the rotating rollers and the fixed cavity. Even when the rollers rotate at high speed to transport the substrate, there is no path for gas leakage between their axis and the cavity. This ensures the high vacuum integrity of the sealing assembly itself. The cylindrical surfaces of the two rollers, arranged in pairs, form a highly controllable narrow gap in the center of the channel that matches the thickness of the substrate. Gas molecules must undergo a strong throttling effect to pass through these narrow gaps, resulting in a significant reduction in flow rate and velocity, thereby effectively enhancing the suppression of crossflow.

[0086] In one possible implementation, please see Figure 3 As shown, each vacuum coating chamber 10 is equipped with a third vacuum port 101, which is connected to the differential pumping system 30.

[0087] In this embodiment, each vacuum coating chamber 10 is equipped with a third vacuum port 101, which connects the vacuum coating chamber 10 to the differential pumping system 30, thereby establishing an independent, high-priority exhaust channel for each vacuum coating chamber 10. A large amount of process gases (such as Ar) and reaction byproduct gases generated during sputtering can be directly and efficiently extracted from the vacuum coating chamber 10 through the third vacuum port 101, without relying entirely on slow diffusion through the transition zone, thus further improving gas exchange efficiency.

[0088] In reactive sputtering (such as Al2O3 deposition), the introduced oxygen (O2) may not react completely. If excess O2 remains in the vacuum deposition chamber 10, it can lead to continuous oxidation (poisoning) of the target material or incorporation into the film. By actively and quickly extracting these residual reactive gases through the third vacuum port 101, the partial pressure of the reactive gases in the vacuum deposition chamber 10 can be kept stable and pure, thereby obtaining a film with a more accurate stoichiometric ratio and higher purity.

[0089] By independently adjusting the valve opening or pump speed leading to each third vacuum port 101, the working pressure of each vacuum coating chamber 10 can be independently and precisely controlled, ensuring that it is always within its optimal process window, which is beneficial for obtaining high-performance multilayer films.

[0090] Further, please see Figure 1 As shown, each vacuum coating chamber 10 can be equipped with an independent differential pumping system 30, thereby precisely controlling the vacuum level required by each vacuum coating chamber 10.

[0091] Further, please see Figure 3 As shown, a target 11 is disposed inside the vacuum coating chamber 10. Each vacuum coating chamber 10 supports the installation of 2-12 sputtering target tubes, and the target angle is continuously adjustable (30°-90°), compatible with DC / RF / MF power supplies, thereby meeting the requirements for co-sputtering of magnetic materials (such as Co) and non-magnetic materials (such as Al2O3).

[0092] Further, please see Figure 3 As shown, the roller 61 can change the transmission path and direction of the substrate, enabling it to pass through the various chambers and functional areas of the equipment along a preset, complex route.

[0093] Further, please see Figure 3 As shown, the cooling roller 62 can efficiently reduce the temperature of the substrate during or after the coating process.

[0094] In one possible implementation, please see Figure 4 and Figure 5 As shown, the magnetron sputtering coating equipment also includes:

[0095] Sputtering power supply 41 and roll speed controller 42;

[0096] The film thickness monitoring module 43 is located at the substrate output end of the vacuum coating chamber 10. The film thickness monitoring module 43 is used to monitor the film thickness at the substrate output end of the vacuum coating chamber 10 in real time.

[0097] The control module 40 is electrically and / or communicatively connected to the film thickness monitoring module 43, the sputtering power supply 41, and the roll speed controller 42.

[0098] In this embodiment, the film thickness monitoring module 43 is positioned at the substrate output end of the vacuum coating chamber 10, enabling it to capture the actual film thickness data on the substrate immediately, avoiding the significant time delay caused by winding the substrate to the take-up end before detection. The film thickness monitoring module 43 sends the measurement data to the control module 40 in real time, and the control module 40 compares the real-time data with the preset target film thickness value. Once a deviation is detected (taking thinner film thickness as an example), it will immediately calculate and issue an instruction. By adjusting the sputtering power supply 41, the sputtering power is slightly increased, instantly increasing the sputtering rate of the target material, making the subsequently deposited film layer thicker to compensate for the deviation; and / or, by adjusting the roll speed controller 42, the substrate travel speed is slightly reduced, allowing the substrate per unit area to remain in the plasma region for a longer time, receiving more sputtered particles, thereby resulting in a thicker film layer. Through real-time feedback and adjustment, process drift can be corrected in a shorter time, ensuring that the film thickness uniformity of the entire roll is controlled within the set threshold range (e.g., within ±2%), thereby meeting the stringent requirements of high-end devices for film thickness consistency and effectively improving product yield and raw material utilization.

[0099] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0100] It should be noted that the terms "one embodiment," "embodiment," "exemplary embodiment," "some embodiments," etc., mentioned in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0101] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A magnetron sputtering coating apparatus, characterized in that, include: Multiple vacuum coating chambers (10) arranged in sequence. A transition vacuum chamber (20) is disposed at the substrate input end and substrate output end of the vacuum coating chamber (10); A differential pumping system (30) is connected to the transition vacuum chamber (20). The differential pumping system (30) is used to maintain the vacuum level in the transition vacuum chamber (20) within a set threshold range, thereby suppressing gas cross-flow between two adjacent vacuum coating chambers (10).

2. The magnetron sputtering coating equipment according to claim 1, characterized in that, The differential pumping system (30) includes a turbomolecular pump (31) and a Roots pump (32). The turbomolecular pump (31) is connected to the transition vacuum chamber (20). The turbomolecular pump (31) and the Roots pump (32) are connected in series to form a multi-stage pumping channel.

3. The magnetron sputtering coating equipment according to claim 2, characterized in that, The differential pumping system (30) also includes a cryogenic trap (33), which is disposed in the airflow channel of the differential pumping system (30) and connected in series with the turbomolecular pump (31) and the Roots pump (32).

4. The magnetron sputtering coating equipment according to claim 1, characterized in that, The transition vacuum chamber (20) includes a first transition vacuum chamber (201) and a second transition vacuum chamber (202), which are connected in series.

5. The magnetron sputtering coating equipment according to claim 4, characterized in that, The first transition vacuum chamber (201) is equipped with a first vacuum port (203), and the second transition vacuum chamber (202) is equipped with a second vacuum port (204). Both the first vacuum port (203) and the second vacuum port (204) are connected to the differential pumping system (30).

6. The magnetron sputtering coating equipment according to claim 4, characterized in that, A first isolation baffle (21) is provided inside the transition vacuum chamber (20), and the first isolation baffle (21) is disposed between the first transition vacuum chamber (201) and the second transition vacuum chamber (202); The first isolation baffle (21) has a first connection channel (211) for connecting the first transition vacuum chamber (201) and the second transition vacuum chamber (202) in series.

7. The magnetron sputtering coating equipment according to claim 6, characterized in that, A second isolation baffle (22) is provided between the transition vacuum chamber (20) and the vacuum coating chamber (10). The second isolation baffle (22) is provided with a second connection channel (221), which is used to connect the transition vacuum chamber (20) with the vacuum coating chamber (10).

8. The magnetron sputtering coating equipment according to claim 7, characterized in that, First magnetic fluid sealing rollers (23) are respectively provided on both sides of the first connecting channel (211). Part of the cylindrical surface of the first magnetic fluid sealing roller (23) extends into the first connecting channel (211) to form a narrow gap for the substrate to pass through together with another first magnetic fluid sealing roller (23) arranged opposite to it. A second magnetic fluid sealing roller (24) is provided on both sides of the second connecting channel (221). A portion of the cylindrical surface of the second magnetic fluid sealing roller (24) extends into the second connecting channel (221) to form a narrow gap for the substrate to pass through together with another second magnetic fluid sealing roller (24) arranged opposite to it.

9. The magnetron sputtering coating equipment according to claim 1, characterized in that, Each of the vacuum coating chambers (10) is equipped with a third vacuum port (101), which is connected to the differential pumping system (30).

10. The magnetron sputtering coating apparatus according to any one of claims 1-9, characterized in that, The magnetron sputtering coating equipment also includes: Sputtering power supply (41) and roll speed controller (42); A film thickness monitoring module (43) is disposed at the substrate output end of the vacuum coating chamber (10). The film thickness monitoring module (43) is used to monitor the film thickness at the substrate output end of the vacuum coating chamber (10) in real time. The control module (40) is electrically and / or communicatively connected to the film thickness monitoring module (43), the sputtering power supply (41), and the roll speed controller (42).

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