A thin film deposition apparatus for heating and cooling of workpiece disks

Abstract

The utility model discloses a kind of thin film deposition equipment for workpiece disc heating and cooling, including cavity, rotating lifting shaft, workpiece disc and heating assembly;Cavity bottom is equipped with total air inlet;The upper end of rotating lifting shaft passes through cavity and is connected with workpiece disc;Heating assembly is set in cavity bottom, and it forms a inner chamber between workpiece disc and heating assembly;Workpiece disc inside is provided with first airflow channel, and the air inlet of first airflow channel is towards the lower end of workpiece disc, and is communicated with inner chamber;The air outlet of first airflow channel is towards the upper end of workpiece disc;Workpiece disc upper end face is also provided with multiple recesses for placing wafer.This utility model can be used for quick heating workpiece disc in coating process, workpiece disc is heated to process temperature conveniently, and it can also be used for quick cooling workpiece disc when equipment maintenance, save maintenance time, improve maintenance efficiency, and do not affect the rotation of workpiece disc;Airflow channel arranged in workpiece disc can ensure airflow flow from workpiece disc inside.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and more specifically, to a thin film deposition apparatus for heating and cooling a workpiece tray. Background Technology

[0002] Wafers are essential raw materials for manufacturing semiconductor devices, and wafer deposition is a key technology in wafer manufacturing, involving the uniform deposition of one or more thin film materials on the wafer surface. Thin film deposition equipment is the crucial equipment for realizing the wafer deposition process.

[0003] Existing technology, patent CN113088929A, discloses an MOCVD reaction chamber and its application. The reaction chamber includes a reaction chamber cavity, an upper support plate, a lower support plate, a hydride gas source inlet, an organic compound gas source inlet, a baffle, and an outlet. The upper support plate also includes an upper heating wire; the lower support plate includes a lower heating wire and a height adjustment device; the lower support plate is movable vertically; and the baffle is also movable vertically. It is used for in-situ double-sided growth. By separating the organic compound gas source and hydride gas source inlets and isolating them with a baffle, pre-reaction is avoided, reducing the probability of adhering substances and particulate matter generated within the reaction chamber, thus improving the appearance of the epitaxial wafer.

[0004] However, this reaction chamber has the following shortcomings: (1) The structural design of heating wires inside the upper and lower bearing plates prevents the workpiece plate from rotating, thus limiting the uniform distribution of materials during the thin film deposition process; (2) It only has a rapid heating function and cannot achieve a rapid cooling effect; Therefore, it is necessary to provide a new thin film deposition device. Utility Model Content

[0005] In view of this, the purpose of this utility model is to provide a thin film deposition device for heating and cooling a workpiece disk, so as to solve the problems existing in the prior art.

[0006] To achieve the above objectives, the technical solution of this utility model is as follows: A thin film deposition apparatus for heating and cooling a workpiece disk includes a cavity, a rotary lifting shaft, a workpiece disk, and a heating assembly. The bottom of the cavity is provided with a main air inlet that communicates with the interior of the cavity; The upper end of the rotary lifting shaft extends through the bottom of the cavity and into the cavity to connect with the workpiece disk; The heating component is located at the bottom of the cavity. Driving the rotating lifting shaft can cause the workpiece disk to descend to fit with the upper edge of the heating component, so that an inner cavity is formed between the workpiece disk and the heating component. The workpiece tray has a first airflow channel inside, with the air inlet of the first airflow channel facing the lower end of the workpiece tray and communicating with the inner cavity; the air outlet of the first airflow channel faces the upper end of the workpiece tray; the upper surface of the workpiece tray is also provided with a plurality of grooves for placing wafers.

[0007] Furthermore, the air outlet of the first airflow channel is located at the center of the workpiece disk, and a microporous gasket is provided at the air outlet of the first airflow channel.

[0008] Furthermore, the heating assembly includes a chassis on which a heating tube is mounted, and an isolation ring is provided on the outer periphery of the chassis, wherein the bottom edge of the workpiece disk can fit into the upper part of the isolation ring.

[0009] Furthermore, the isolation ring is provided with a second airflow channel, the air inlet of the second airflow channel is radially oriented towards the inside of the isolation ring, and the air outlet of the second airflow channel is connected to the air inlet of the first airflow channel.

[0010] Furthermore, a plurality of ejector pin holes are provided in the groove, and the ejector pin holes are arranged to avoid the first airflow channel, and ejector pin assemblies are provided in the ejector pin holes.

[0011] Furthermore, the ejector pin assembly includes an upper ejector plate, a lower ejector plate, a connecting shaft, and a locking screw; the upper ejector plate is located on the upper side of the workpiece disc and is connected to the upper end of the connecting shaft; the lower end of the connecting shaft passes through the ejector pin hole and is locked to the lower ejector plate by the locking screw.

[0012] Furthermore, the ejector pin assembly is made of ceramic; the workpiece tray is made of aluminum alloy.

[0013] Furthermore, the first airflow channel is distributed in a spiral disk shape.

[0014] The beneficial effects of this utility model are as follows: The thin film deposition equipment for heating and cooling a workpiece tray provided by this utility model can be used to rapidly heat and cool the workpiece tray in the coating process, making it convenient for the workpiece tray to quickly heat up to the process temperature. At the same time, it can also be used to quickly cool down the workpiece tray during equipment maintenance, saving maintenance time and improving maintenance efficiency, without affecting the rotation of the workpiece tray; the airflow channel set in the workpiece tray can ensure that the airflow flows from the inside of the workpiece tray. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0016] Figure 1 This is an exploded structural diagram of the present invention.

[0017] Figure 2 This is a top view of the structure of this utility model.

[0018] Figure 3 It is along Figure 2 A schematic diagram of the cross-sectional structure at point AA.

[0019] Figure 4 yes Figure 3 A magnified structural diagram of point A in the middle.

[0020] Figure 5 yes Figure 3 A magnified structural diagram at point B in the middle.

[0021] Figure 6 This is a schematic diagram of the structure of the first airflow channel in this utility model.

[0022] Figure 7 This is an exploded structural diagram of the ejector pin assembly in this utility model.

[0023] Explanation of reference numerals in the attached figures: 1. Cavity; 11. Main air inlet; 2. Rotary lifting shaft; 3. Workpiece disc; 31. First airflow channel; 32. Groove; 33. Ejector pin hole; 4. Heating assembly; 41. Chassis; 42. Heating tube; 43. Isolation ring; 44. Second airflow channel; 5. Inner chamber; 6. Microporous gasket; 7. Ejector pin assembly; 71. Upper ejector plate; 72. Lower ejector plate; 73. Connecting shaft; 74. Locking screw. Detailed Implementation

[0024] The structure provided by this utility model will be explained and described in detail below with reference to the accompanying drawings.

[0025] refer to Figures 1 to 7 As shown, this embodiment specifically discloses a thin film deposition apparatus for heating and cooling a workpiece disk, including a cavity 1, a rotary lifting shaft 2, a workpiece disk 3, and a heating assembly 4; The bottom of the cavity 1 is provided with a main air inlet 11 that communicates with the interior of the cavity 1 for introducing airflow into the cavity 1; it can be understood that the cavity 1 is the process cavity for wafer deposition, and the cavity 1 is also provided with a cover (not shown in the figure) for sealing the cavity 1. The upper end of the rotating lifting shaft 2 extends through the bottom of the cavity 1 and into the cavity 1 to connect with the workpiece disk 3, which is used to drive the workpiece disk 3 to move up and down and rotate within the cavity 1. The heating component 4 is located at the bottom of the cavity 1 and drives the rotating lifting shaft 2 to lower the workpiece disk 3 to fit with the upper edge of the heating component 4, so that an inner cavity 5 is formed between the workpiece disk 3 and the heating component 4. The workpiece tray 3 is provided with a first airflow channel 31. The air inlet of the first airflow channel 31 faces the lower end of the workpiece tray 3 and is connected to the inner cavity 5. The air outlet of the first airflow channel 31 faces the upper end of the workpiece tray 3. The upper surface of the workpiece tray 3 is also provided with a plurality of grooves 32 for placing wafers.

[0026] A wafer pedestal (not shown) is typically placed in the groove 32, and the wafer is placed in the groove through the wafer pedestal.

[0027] In this embodiment, the heating component 4 is independently disposed at the bottom of the cavity 1, completely separated from the workpiece disk 3; the workpiece disk 3 is connected to the rotary lifting shaft 2, which drives its rotation and vertical movement independently. When heating is required, the rotary lifting shaft 2 lowers the workpiece disk 3, causing it to fit against the upper edge of the heating component 4, forming a closed inner cavity 5; the heating component 4 only indirectly acts on the workpiece disk 3 by heating the gas in the inner cavity 5, and does not form a structural bond with the workpiece disk 3, thus not affecting the rotation of the workpiece disk.

[0028] Furthermore, a first airflow channel 31 is designed inside the workpiece tray 3. The air inlet of the first airflow channel 31 connects to the inner chamber 5, and the air outlet faces the upper end of the workpiece tray (wafer placement surface), forming a complete airflow path of "inner chamber → airflow channel → upper surface of workpiece tray". When heating is required, the heating component 4 heats the gas in the inner chamber 5, and the hot airflow heats the wafer above the lower end of the workpiece tray 3 through the first airflow channel 31. When cooling is required, heating can be stopped, and cooling gas (such as inert gas) can be introduced into the inner chamber 5. The cooling gas flows through the workpiece tray 3 along the same path, which can quickly remove the heat from the workpiece tray and the wafer, achieving a rapid cooling effect.

[0029] In some preferred embodiments, the first airflow channel 31 is distributed in a spiral disk shape, which can make the heating of the workpiece disk 3 more uniform. The workpiece disk 3 is made of aluminum alloy, which has good thermal conductivity, good processing performance, and is not prone to metal contamination. The air outlet of the first airflow channel 31 is located at the center of the workpiece disk 3, and a microporous gasket 6 is provided at the air outlet of the first airflow channel 31.

[0030] The microporous gasket 6 has multiple tiny pores. The gas in the first airflow channel 31 diffuses to the upper end of the workpiece disk 3 through the tiny pores, which can reduce the airflow at the outlet of the first airflow channel 31, allowing the gas inside the first airflow channel 31 to stay longer and improve the heating or cooling effect.

[0031] In the illustrated embodiment, the heating assembly 4 includes a chassis 41, on which a heating tube 42 is mounted. An isolation ring 43 is provided on the outer periphery of the chassis 41. The heating tube 42 can be arranged in a spiral shape. The isolation ring 43 surrounds the heating tube 42 inside, which can achieve the effect of concentrating heating or cooling airflow. The bottom edge of the workpiece disk 3 can fit into the upper part of the isolation ring 43.

[0032] Specifically, both the chassis 41 and the isolation ring 43 are made of quartz. Quartz has advantages such as high temperature resistance and strong chemical inertness. When the heating tube 42 is powered on by an external power source, it generates high temperature to heat the gas in the inner chamber 5, thereby heating the workpiece disk 3 and the wafer.

[0033] In some embodiments, reference Figure 3 and Figure 5 As shown, a second airflow channel 44 is provided in the isolation ring 43. The air inlet of the second airflow channel 44 is radially oriented towards the inside of the isolation ring 43, that is, the air inlet of the second airflow channel 44 is connected to the inner cavity 5, and the air outlet of the second airflow channel 44 is connected to the air inlet of the first airflow channel 31.

[0034] By setting a second airflow channel 44 in the isolation ring 43, the gas in the inner chamber 5 must enter through the isolation ring 43. That is, the path of the first airflow channel 31 entering the workpiece disk 3 is uniquely limited to the second airflow channel 44 through the isolation ring 43, rather than through the free diffusion or other non-directional paths of the inner chamber 5. This makes the airflow distribution in the first airflow channel 31 more uniform, and the heating or heat dissipation more uniform.

[0035] Furthermore, by setting a second airflow channel 44, even if the second airflow channel 44 of the isolation ring 43 and the first airflow channel 31 of the workpiece disk 3 are not aligned, the gas below the workpiece disk 3 will not escape even if the workpiece disk falls on the isolation ring. This can achieve more process requirements, namely, the gas in the inner chamber 5 will enter the first airflow channel 31 only after the outlet of the second airflow channel 44 and the inlet of the first airflow channel 31 are aligned.

[0036] In some embodiments, the number of air inlets of the first airflow channel 31 and the number of second airflow channels can be appropriately increased as needed, thereby increasing the airflow rate.

[0037] Continue to refer to Figure 1 and Figure 7 As shown, a plurality of ejector pin holes 33 are provided in the groove 32, and the ejector pin holes 33 are arranged to avoid the first airflow channel 31. An ejector pin assembly 7 is provided in the ejector pin hole 33.

[0038] The ejector pin assembly 7 is made of ceramic, a non-metallic material, which has minimal deformation when heated and can prevent metal contamination during the process. It is used to automate the placement and removal of wafers in the groove 32 of the workpiece tray 3, avoiding contamination from manual contact.

[0039] In this embodiment, the ejector pin assembly 7 includes an upper ejector plate 71, a lower ejector plate 72, a connecting shaft 73, and a locking screw 74. The upper ejector plate 71 is located on the upper side of the workpiece disk 3 and is connected to the upper end of the connecting shaft 73. The lower end of the connecting shaft 73 passes through the ejector pin hole 33 and is locked to the lower ejector plate 72 by the locking screw 74. This allows the ejector pin assembly 7 to move up and down in a limited manner within the ejector pin hole 33. If the pressure on the lower side of the workpiece disk 3 is higher than the pressure on the upper side, the ejector pin assembly 7 rises, and the lower ejector plate 72 presses against the ejector pin hole 33, which can enhance the pressure holding capacity of the lower end of the workpiece disk 3.

[0040] The working principle of this utility model is as follows: Heating of workpiece tray 3: Before the process begins, workpiece tray 3 is lowered by rotating lifting shaft 2, so that the quartz isolation ring 43 fits into the groove on the edge of workpiece tray 3, so that the lower chamber of workpiece tray 3 forms a small sealed space, namely inner chamber 5. At this time, gas is introduced through the air inlet 11 of the cavity 1, and the heating tube 42 is turned on at the same time. As the pressure in the lower chamber of workpiece tray 3 increases, the ejector pin assembly 7 rises under the pressure, so that the lower ejector plate 72 seals the ejector pin hole 33, further enhancing the airtightness of the lower chamber of workpiece tray 3. At this time, the gas is heated by the heating tube 42. The gas flows from the second airflow channel 44 of the isolation ring to the air inlet of the workpiece disk and through the first airflow channel 31 of the workpiece disk. The microporous gasket 6 increases the residence time of the gas in the first airflow channel 31, thereby enhancing the heating effect of the workpiece disk 3. Since the pressure on the upper side of the workpiece disk 3 is lower than the pressure on the lower side, the gas will continuously flow from the lower chamber of the workpiece disk 3 into the upper chamber of the workpiece disk 3 through this process. When the workpiece disk 3 reaches the process temperature, the airflow is turned off and the workpiece disk 3 is raised by rotating the lifting shaft 2, so that the pressure on both sides of the workpiece disk 3 is consistent.

[0041] Workpiece tray cooling: If maintenance is required after the process, first shut off the heating tube 42, then lower the workpiece tray 3 via the rotating lifting shaft 2 so that the quartz isolation ring 43 fits into the groove on the edge of the workpiece tray 3, forming a small sealed space in the lower chamber of the workpiece tray 3. At this time, cold gas is introduced through the cavity air inlet 71. As the pressure in the lower chamber of the workpiece tray 3 increases, the ejector pin assembly 7 rises under the pressure, causing the lower ejector plate 72 to seal the ejector pin hole 33, further enhancing the airtightness of the lower chamber of the workpiece tray 3. At this time, the gas flows from the second airflow channel 44 of the isolation ring to the air inlet of the first airflow channel 31, and then through the first airflow channel 31 of the workpiece tray. Since the pressure on the upper side of the workpiece tray 3 is lower than the pressure on the lower side, the gas will continuously flow from the lower chamber of the workpiece tray 3 into the upper chamber of the workpiece tray 3 through this process. When the workpiece tray 3 drops to the process temperature, the airflow is shut off, and the workpiece tray 3 is raised via the rotating lifting shaft 2 until the pressure on both sides of the workpiece tray 3 is equal.

[0042] In summary, compared with existing technologies, this invention enables rapid heating and cooling of the workpiece tray in thin film deposition equipment, reducing process time, increasing process efficiency, and improving production capacity. By designing the ejector pin assembly, a pressure difference is achieved between the upper and lower chambers of the workpiece tray, allowing gas to flow freely from the isolation ring and the workpiece tray channel, and enabling the gas to remain in the lower chamber of the workpiece tray for heating. Furthermore, this heating structure does not affect the rotation process of the workpiece tray in the thin film deposition equipment. By adding microporous gaskets, a better pressure-holding effect is achieved, further increasing the heating rate of the workpiece tray.

[0043] This structure transforms the radiative heat transfer in the early stages of process preparation into a combination of fluid heat transfer and radiative heat transfer, greatly enhancing heat exchange efficiency, shortening the preparation time in the early and late stages of the process, and increasing equipment capacity.

[0044] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0045] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0046] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0047] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0048] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and simple improvements made on the substantive content of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A thin film deposition apparatus for heating and cooling a workpiece tray, characterized in that, It includes a cavity (1), a rotary lifting shaft (2), a workpiece disk (3), and a heating assembly (4); The bottom of the cavity (1) is provided with a main air inlet (11) that communicates with the interior of the cavity (1). The upper end of the rotary lifting shaft (2) extends through the bottom of the cavity (1) and into the cavity (1) to connect with the workpiece disk (3); The heating component (4) is located at the bottom of the cavity (1) and drives the rotating lifting shaft (2) to lower the workpiece disk (3) to fit with the upper edge of the heating component (4), so that an inner cavity (5) is formed between the workpiece disk (3) and the heating component (4). The workpiece disk (3) is provided with a first airflow channel (31), the air inlet of the first airflow channel (31) faces the lower end of the workpiece disk (3) and is connected to the inner cavity (5); the air outlet of the first airflow channel (31) faces the upper end of the workpiece disk (3); the upper surface of the workpiece disk (3) is also provided with a plurality of grooves (32) for placing wafers.

2. The thin film deposition apparatus according to claim 1, characterized in that, The outlet of the first airflow channel (31) is located at the center of the workpiece disk (3), and a microporous gasket (6) is provided at the outlet of the first airflow channel (31).

3. The thin film deposition apparatus according to claim 1, characterized in that, The heating assembly (4) includes a chassis (41) on which a heating tube (42) is installed. An isolation ring (43) is provided on the outer periphery of the chassis (41), and the bottom edge of the workpiece disk (3) can fit into the upper part of the isolation ring (43).

4. The thin film deposition apparatus according to claim 3, characterized in that, The isolation ring (43) is provided with a second airflow channel (44), the air inlet of the second airflow channel (44) is radially oriented toward the interior of the isolation ring (43), and the air outlet of the second airflow channel (44) is connected to the air inlet of the first airflow channel (31).

5. The thin film deposition apparatus according to claim 1, characterized in that, The groove (32) is provided with a plurality of pin holes (33), and the pin holes (33) are arranged away from the first airflow channel (31). Pin assemblies (7) are provided in the pin holes (33).

6. The thin film deposition apparatus according to claim 5, characterized in that, The ejector assembly (7) includes an upper ejector plate (71), a lower ejector plate (72), a connecting shaft (73), and a locking screw (74); the upper ejector plate (71) is located on the upper side of the workpiece disc (3) and is connected to the upper end of the connecting shaft (73); the lower end of the connecting shaft (73) passes through the ejector hole (33) and is locked to the lower ejector plate (72) by the locking screw (74).

7. The thin film deposition apparatus according to claim 5, characterized in that, The ejector pin assembly (7) is made of ceramic; the workpiece disc (3) is made of aluminum alloy.

8. The thin film deposition apparatus according to claim 1, characterized in that, The first airflow channel (31) is distributed in a spiral disk shape.

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