A gas distribution apparatus and a processing apparatus for semiconductor devices

Abstract

The utility model provides a kind of gas distribution device, a kind of semiconductor device's processing equipment and a kind of semiconductor device's processing method.The gas distribution device includes gas inlet pipeline and gas distribution cavity.The gas distribution device further includes: multiple gas distribution branches, connect the gas distribution cavity, to obtain the branch gas of each gas distribution branch;And flow resistance adjusting member, in each gas distribution branch, to connect the branch gas inlet section flow of the gas distribution branch and its branch gas outlet section, wherein the flow resistance adjusting member includes adjusting hole channel, by changing the interval of adjusting hole channel and branch gas outlet section, to revise the outflow resistance difference of each gas distribution branch.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically a gas distribution device and a semiconductor device processing equipment. Background Technology

[0002] In the semiconductor manufacturing field, thin film deposition processes such as chemical vapor deposition and atomic layer deposition are core steps in chip manufacturing. These processes rely on the wafer transfer system of semiconductor process equipment to transfer wafers between multiple chambers and execute the process. To meet the requirements of simultaneous deposition in multiple chambers, current technologies typically use a single gas distribution unit as the main supply end for process gases. This unit is connected to the gas distribution structure via a main pipeline, distributing the process gases to each independent workstation of the equipment. This provides a continuous and stable deposition gas source for the wafers at each workstation, which is the conventional gas supply architecture for mass production in current multi-chamber semiconductor process equipment.

[0003] In practical applications, the processing accuracy of the gas distribution structure is often limited due to issues such as pipe diameter deviations and uneven inner wall roughness in each branch pipeline. Furthermore, errors can easily occur during assembly due to factors such as the sealing of branch connections and the consistency of pipeline lengths, resulting in significant differences in flow resistance among the gas distribution branches. Therefore, when radio frequency (RF) thin film deposition is initiated at each station, the flow rate and flow distribution of process gases in branches with different flow resistances become unbalanced, directly causing deviations in the film thickness deposited on the wafer surface at different stations. Ultimately, this leads to poor stability and consistency of the chips produced at each station.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a gas distribution technology that can improve the uniformity of the gas flow output from each gas distribution branch, thereby helping to improve the process effect and enhance the stability and consistency of thin film deposition in each process chamber. Utility Model Content

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a gas distribution device and a semiconductor device processing equipment, which are used to adjust the flow resistance of each branch to uniformly distribute the process gas flow of each gas distribution branch, so as to improve the stability and consistency of thin film deposition in each process chamber.

[0007] Specifically, the gas distribution device according to the first aspect of this utility model includes an intake pipe and a gas distribution chamber. The gas distribution device further includes: multiple gas distribution branches connected to the gas distribution chamber to obtain branch gas for each gas distribution branch; and a flow resistance adjusting component disposed in each gas distribution branch to connect the branch intake section and the branch outlet section of the gas distribution branch, wherein the flow resistance adjusting component includes an adjusting channel, and by changing the gap between the adjusting channel and the branch outlet section, the difference in outlet flow resistance of each gas distribution branch is corrected.

[0008] Furthermore, in some embodiments of this utility model, the air inlet of the regulating channel is located in the air outlet area of ​​the branch air inlet section, and the extension line of the regulating channel intersects the pipe wall of the branch air outlet section, so as to change the gap between the air outlet of the regulating channel and the pipe wall of the branch air outlet section during the movement of the flow resistance regulating member.

[0009] Furthermore, in some embodiments of this utility model, the end pipe diameter of the branch air inlet section is less than or equal to the front pipe diameter of the branch air outlet section, and the air outlet of the regulating channel is located outside its corresponding air inlet, with the channel extension line of the regulating channel inclined radially outward so that it intersects with the pipe wall of the branch air outlet section.

[0010] Furthermore, in some embodiments of this utility model, the end diameter of the branch air inlet section is larger than the front diameter of the branch air outlet section, and the air outlet of the regulating channel and its corresponding air inlet are on the same horizontal line, so that the extension line of the regulating channel intersects the pipe wall of the branch air outlet section.

[0011] Furthermore, in some embodiments of this utility model, the flow resistance regulating member further includes a main flow channel, through which branch gas of a first flow rate is transmitted to the branch outlet section, and through the regulating channel, branch gas of a second flow rate is transmitted to the branch outlet section, wherein the orifice diameter of the main flow channel is larger than the orifice diameter of the regulating channel.

[0012] Furthermore, in some embodiments of this utility model, the gas distribution device includes a clamping nut, which is respectively disposed at the connection points of the flow resistance adjusting member with the branch inlet section and the branch outlet section. The clamping nut is loosened to provide space for the left and right movement of the flow resistance adjusting member, and after the flow resistance adjusting member has completed the movement adjustment, the clamping nut is tightened to fix the position of the flow resistance adjusting member.

[0013] Furthermore, in some embodiments of this utility model, a sealing ring is provided between the clamping nut and the flow resistance adjusting member to seal the clamping nut and the flow resistance adjusting member, and a metal gasket is provided between the clamping nut and the sealing ring to block the clamping nut and the sealing ring.

[0014] Furthermore, the semiconductor device processing equipment provided according to the second aspect of the present invention includes: multiple process chambers for performing coating processes; a gas box for providing process gases; and a gas distribution device as described in any one of the first aspects of the present invention, wherein the gas distribution device has an inlet pipe connected to the gas box, distributes the process gases to multiple gas distribution branches via the gas distribution chambers, and corrects the difference in outlet flow resistance of each gas distribution branch through a flow resistance regulating element in each gas distribution branch, so that the amount of gas entering each process chamber is the same. Attached Figure Description

[0015] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0016] Figure 1 A schematic diagram of the structure of a gas distribution device provided according to some embodiments of the present invention is shown.

[0017] Figure 2 A schematic diagram of the device structure of a flow resistance regulating element provided according to some embodiments of the present invention is shown.

[0018] Figure 3A A three-dimensional structural diagram of the installation of a flow resistance adjusting member according to some embodiments of the present invention is shown.

[0019] Figure 3B A cross-sectional schematic diagram of the installation structure of a flow resistance regulating member according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic diagram of the tilt adjustment channel provided according to some embodiments of the present invention is shown.

[0021] Figure 5 A schematic diagram of the structure of a horizontal adjustment channel provided according to some embodiments of the present invention is shown.

[0022] Figure 6 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0023] Figure label:

[0024] 10. Intake Pipe

[0025] 20 air chambers

[0026] 30 gas branch lines

[0027] 31 Branch intake section

[0028] 32 branch outlet sections

[0029] 40 Flow resistance adjustment component

[0030] 41 Adjustment channel

[0031] 42 Mainstream channels

[0032] 50. Compression nut

[0033] 60 sealing ring

[0034] 70 Metal gasket Detailed Implementation

[0035] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.

[0036] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0037] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.

[0038] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of this utility model.

[0039] As mentioned above, in practical applications, the processing accuracy of the gas distribution structure is often limited due to issues such as pipe diameter deviations and uneven inner wall roughness in each branch pipeline. Furthermore, errors can easily occur during assembly due to factors such as the sealing of branch connections and the consistency of pipeline lengths, resulting in significant differences in the flow resistance of each gas branch. Therefore, when each station starts radio frequency for thin film deposition, the flow rate and flow distribution of process gas in branches with different flow resistances become unbalanced, directly causing deviations in the film thickness deposited on the wafer surface at different stations. Ultimately, this leads to poor stability and consistency of the chips produced at each station.

[0040] In order to overcome the above-mentioned defects in the prior art, the present invention provides a gas distribution device, a semiconductor device processing equipment, and a semiconductor device processing method, which are used to adjust the flow resistance of each branch to uniformly distribute the process gas flow of each gas distribution branch, so as to improve the stability and consistency of thin film deposition in each process chamber.

[0041] In some non-limiting embodiments, the gas separation device provided in the first aspect of the present invention can be configured in the semiconductor device processing equipment provided in the second aspect of the present invention, and the semiconductor device processing equipment can be processed by the semiconductor device processing method provided in the third aspect of the present invention.

[0042] Please refer to the details. Figure 1 , Figure 1 A schematic diagram of the structure of a gas distribution device provided according to some embodiments of the present invention is shown. Figure 2 A schematic diagram of the device structure of a flow resistance regulating element provided according to some embodiments of the present invention is shown. Figure 3A A three-dimensional structural diagram of the installation of a flow resistance adjusting member according to some embodiments of the present invention is shown. Figure 3B A cross-sectional schematic diagram of the installation structure of a flow resistance regulating member according to some embodiments of the present invention is shown.

[0043] like Figures 1-2 , Figures 3A-3BAs shown, in some embodiments of this utility model, the gas distribution device includes an inlet pipe 10, a gas distribution chamber 20, multiple gas distribution branches 30, and a flow resistance regulating component 40. The multiple gas distribution branches 30 are connected to the gas distribution chamber 20 to obtain branch gas for each gas distribution branch 30. The flow resistance regulating component 40 is disposed in each gas distribution branch 30 to connect the branch inlet section 31 and its branch outlet section 32. The flow resistance regulating component 40 includes an adjusting channel 41. By changing the gap between the adjusting channel 41 and the branch outlet section 32, the difference in outlet flow resistance of each gas distribution branch 30 can be corrected. In this embodiment, by changing the gap between the adjusting channel 41 of the flow resistance regulating component 40 and the branch outlet section 32 in each gas distribution branch 30, the difference in outlet flow resistance caused by processing and assembly errors in each branch can be accurately corrected, thereby uniformly distributing the process gas flow rate of each gas distribution branch 30 to improve the stability and consistency of thin film deposition in each process chamber.

[0044] Furthermore, in the above embodiments, the flow resistance adjustment component 40 can be adjusted in situ under high temperature conditions, avoiding the process of heating plate cooling and reheating caused by disassembling and replacing parts, thereby improving the adjustment efficiency.

[0045] Next, as Figures 2-3B As shown, in some embodiments, the local resistance can be increased by reducing the spacing of branches with excessively large spacing and low flow resistance, and / or the local resistance can be reduced by increasing the spacing of branches with excessively small spacing and high flow resistance. Furthermore, for branches with large errors, the resistance can be precisely set by adjusting the orifice gap after eliminating the gaps, ultimately making the total flow resistance of each branch more consistent and achieving uniform gas distribution.

[0046] like Figure 3B As shown, in some optional embodiments, the air inlet of the regulating channel 41 is located in the air outlet area of ​​the branch air inlet section 31, and the extension line of the regulating channel 41 intersects the pipe wall of the branch air outlet section 32, so as to change the gap between the air outlet of the regulating channel 41 and the pipe wall of the branch air outlet section 32 during the movement of the flow resistance regulating member 40.

[0047] Please refer to Figures 4-5 , Figure 4 A schematic diagram of the tilt adjustment channel provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram of the structure of a horizontal adjustment channel provided according to some embodiments of the present invention is shown.

[0048] like Figure 4As shown, in some optional embodiments, the end diameter of the branch air inlet section 31 can be less than or equal to the front diameter of the branch air outlet section 32. The outlet of the adjusting channel 41 is located outside its corresponding inlet, and the extension line of the adjusting channel 41 is inclined radially outward so that it intersects with the pipe wall of the branch air outlet section 32. In this embodiment, a standard specification pipe can be used as the branch air inlet section 31, thereby saving costs.

[0049] In other alternative embodiments, such as Figure 5 As shown, the end of the branch intake section 31 can be improved. The end diameter of the branch intake section 31 can be larger than the front diameter of the branch outlet section 32. The outlet of the regulating channel 41 and its corresponding inlet are on the same horizontal line so that the extension line of the regulating channel 41 intersects the pipe wall of the branch outlet section 32. Here, the end diameter can be set to be horizontal, radially outward, or radially inward.

[0050] Those skilled in the art will understand that the specific structure of the branch intake section 31 is merely a non-limiting embodiment provided by this utility model, intended to clearly demonstrate the main concept of this utility model and provide some specific solutions that are easy for the public to implement, rather than being used to limit all functions or working methods of the gas distribution device.

[0051] In addition, the flow resistance regulating member 40 also includes a main flow channel 42 through which branch gas of a first flow rate is transmitted to the branch outlet section 32, and a regulating channel 41 through which branch gas of a second flow rate is transmitted to the branch outlet section 32. The diameter of the main flow channel 42 may be larger than the diameter of the regulating channel 41.

[0052] Here, the main flow channel 42 can stably transmit a large flow rate of air. Through the cooperation of the main flow channel 42 and the regulating channel 41, the accuracy and stability of the flow resistance regulation can be improved as a whole.

[0053] Specifically, the high-flow-rate airflow that can be stably transmitted through the main channel 42 ensures that the core flow resistance characteristics of each branch are consistent, avoiding flow field fluctuations caused by low-flow-rate adjustments, such as pressure pulsations and sudden changes in flow velocity, which could interfere with the basic flow resistance dominated by the high flow rate. Furthermore, the low-flow-rate airflow that can be transmitted through the regulating channel 41 serves as a flow resistance adjustment carrier, and its adjustable flow resistance characteristics can improve the overall accuracy and stability of flow resistance adjustment for each branch due to manufacturing errors.

[0054] Please continue to refer to this. Figure 3BThe gas distribution device includes a clamping nut 50, which is respectively located at the two ends of the flow resistance adjustment component 40 and the branch air inlet section 31 and the branch air outlet section 32. The clamping nut 50 is loosened to provide space for the flow resistance adjustment component 40 to move left and right, and after the flow resistance adjustment component 40 has completed the movement adjustment, the clamping nut 50 is tightened to fix the position of the flow resistance adjustment component 40.

[0055] Furthermore, a sealing ring 60 is provided between the clamping nut 50 and the flow resistance adjusting component 40 to seal the clamping nut 50 and the flow resistance adjusting component 40, and a metal gasket 70 is provided between the clamping nut 50 and the sealing ring 60 to block the clamping nut 50 and the sealing ring 60.

[0056] Furthermore, the semiconductor device processing equipment provided in the second aspect of this utility model includes multiple process chambers, a gas box, and a gas distribution device provided in the first aspect of this utility model. The multiple process chambers are used for performing coating processes. The gas box is used to provide process gases. The gas distribution device's inlet pipe 10 is connected to the gas box, and distributes the process gases to multiple gas distribution branches 30 via the gas distribution chamber 20. The flow resistance adjustment element 40 in each gas distribution branch 30 corrects the difference in outlet flow resistance of each gas distribution branch 30, so that the amount of gas entering each process chamber is the same.

[0057] The working principle of the semiconductor device processing equipment described above will be described below with reference to embodiments of some semiconductor device processing methods. Those skilled in the art will understand that these embodiments of semiconductor device processing methods are merely non-limiting implementations provided by this invention, intended to clearly demonstrate the main concept of this invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the semiconductor device processing equipment. Similarly, the semiconductor device processing equipment is also merely a non-limiting implementation provided by this invention and does not constitute a limitation on the executing entity or execution order of the steps in these semiconductor device processing methods.

[0058] Please refer to Figure 6 , Figure 6 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0059] like Figure 6 As shown, the semiconductor device processing method can first perform step S1: supply process gas to the gas inlet pipe 10 of the gas distribution device through the gas box, and distribute the process gas to multiple gas distribution branches 30 through the gas distribution chamber 20.

[0060] Then, the method can proceed to step S2: adjust the initial gap between the adjustment channel 41 of each flow resistance adjustment component 40 and the branch outlet section 32 to the corresponding target gap, so as to correct the difference in outlet flow resistance of each branch 30.

[0061] Specifically, the initial outlet airflow resistance difference of each gas distribution branch 30 is obtained. Then, by adjusting the gap between the adjustment channel 41 and the outlet section 32 in each gas distribution branch 30, the correspondence between the gap value and the outlet airflow resistance in each gas distribution branch 30 is obtained, where the outlet airflow resistance is negatively correlated with the gap value. Finally, based on the correspondence, the target gap for each gas distribution branch 30 is obtained to compensate for the initial outlet airflow resistance difference of each gas distribution branch 30.

[0062] Finally, the method can proceed to step S3: through the branch outlet section 32 of each gas distribution branch 30, branch gas with the same distribution volume is introduced into each process chamber to carry out the coating process of multiple process chambers.

[0063] In summary, the gas distribution device, semiconductor device processing equipment, and semiconductor device processing method provided by this utility model can accurately correct the differences in outlet gas resistance caused by processing and assembly errors in each branch by changing the gap between the adjustment channel of the flow resistance adjustment component in each gas distribution branch and the outlet section of the branch. This allows for the uniform distribution of process gas flow in each gas distribution branch, thereby improving the stability and consistency of thin film deposition in each process chamber.

[0064] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0065] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution device, comprising an intake pipe and a gas distribution chamber, characterized in that, The gas distribution device further includes: Multiple gas distribution branches are connected to the gas distribution chamber to obtain the branch gas of each gas distribution branch; and A flow resistance regulating component is disposed in each of the gas distribution branches to connect the branch inlet section and the branch outlet section of the gas distribution branch. The flow resistance regulating component includes an regulating channel, and by changing the gap between the regulating channel and the branch outlet section, the difference in outlet flow resistance of each gas distribution branch is corrected.

2. The gas separator as described in claim 1, characterized in that, The air inlet of the regulating channel is located in the air outlet area of ​​the branch air inlet section, and the extension line of the regulating channel intersects the pipe wall of the branch air outlet section, so as to change the gap between the air outlet of the regulating channel and the pipe wall of the branch air outlet section during the movement of the flow resistance regulating member.

3. The gas separator as described in claim 2, characterized in that, The end diameter of the branch air inlet section is less than or equal to the front diameter of the branch air outlet section. The outlet of the regulating channel is located outside its corresponding air inlet, and the extension line of the regulating channel is inclined radially outward so that it intersects with the pipe wall of the branch air outlet section.

4. The gas separator as described in claim 2, characterized in that, The end diameter of the branch air inlet section is larger than the front diameter of the branch air outlet section, and the air outlet of the regulating channel is at the same horizontal line as its corresponding air inlet, so that the extension line of the regulating channel intersects the pipe wall of the branch air outlet section.

5. The gas separator as described in claim 1, characterized in that, The flow resistance regulating component further includes a main flow channel through which branch gas of a first flow rate is transmitted to the branch outlet section, and a regulating channel through which branch gas of a second flow rate is transmitted to the branch outlet section, wherein the diameter of the main flow channel is larger than the diameter of the regulating channel.

6. The gas separator as described in claim 2, characterized in that, The gas distribution device includes a clamping nut, which is respectively located at the connection points of the flow resistance adjusting member with the branch inlet section and the branch outlet section. The clamping nut is loosened to provide space for the left and right movement of the flow resistance adjusting member, and after the flow resistance adjusting member has completed the movement adjustment, the clamping nut is tightened to fix the position of the flow resistance adjusting member.

7. The gas separator as described in claim 6, characterized in that, A sealing ring is provided between the clamping nut and the flow resistance adjusting component to seal the clamping nut and the flow resistance adjusting component, and a metal gasket is provided between the clamping nut and the sealing ring to block the clamping nut and the sealing ring.

8. A semiconductor device processing apparatus, characterized in that, include: Multiple process chambers are used for coating processes; Gas boxes are used to supply process gases; as well as The gas distribution device according to any one of claims 1 to 7, wherein the gas inlet pipe of the gas distribution device is connected to the gas box, and the process gas is distributed to multiple gas distribution branches via the gas distribution chamber, and the flow resistance difference of each gas distribution branch is corrected by the flow resistance adjustment element in each gas distribution branch so that the amount of gas entering each process chamber is the same.

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