A gas showerhead for an ALD semiconductor apparatus

Abstract

The utility model discloses a kind of gas spray head of ALD semiconductor equipment, including spray head, the spray head is discoid, and the bottom of spray head is provided with a plurality of first through holes, for conveying precursor gas, the top end of spray head is communicated with gas inlet pipe;Still including a plurality of first splitter plate and a plurality of second splitter plate, the first splitter plate and second splitter plate are located at the bottom of baffle, and it is used for adjusting the angle of air flow blowing out.The utility model provides a kind of gas spray head of ALD semiconductor equipment's gas enters into spray head through gas inlet pipe, is evenly discharged through first through hole, has increased the contact area of air flow and substrate, to improve reaction efficiency, the angle of a plurality of first splitter plate and second splitter plate is adjusted by adjusting piece, to realize the adjustment of gas blowing angle, to adapt to different size and shape substrate, to improve the adaptability and flexibility of device, simple structure, convenient operation.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to a gas spray head for an ALD semiconductor device. Background Technology

[0002] Atomic layer deposition (ALD) is an advanced thin-film deposition method widely used in semiconductor manufacturing. In the ALD process, the gas spray head is a key component, whose main function is to uniformly guide the reactive gases to the wafer surface, achieving gas uniformity control during the atomic-level deposition or etching process.

[0003] Traditional gas spray heads typically employ a simple pipe structure. During use, gas is sprayed out through the spray head, which can only perform thin film deposition on the substrate surface within a fixed area. When dealing with substrates of different shapes and sizes, different spray heads need to be replaced, thereby reducing the practicality of the spray head and decreasing work efficiency. Utility Model Content

[0004] The purpose of this invention is to provide a gas spray head for ALD semiconductor devices to address the aforementioned shortcomings in the prior art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a spray head, the spray head being disc-shaped, and the bottom of the spray head having a plurality of first through holes for conveying precursor gas, and the top of the spray head being connected to an air inlet pipe.

[0006] It also includes multiple first diverter plates and multiple second diverter plates. The first diverter plates and the second diverter plates are located at the bottom of the baffle and are used to adjust the angle of the airflow to adapt to different substrate shapes and sizes. Each of the first diverter plates and the second diverter plates has a connecting rod fixedly connected to both ends, and each connecting rod is rotatably connected to the inner wall of the spray head.

[0007] It also includes two adjusting components, which are used to drive multiple first splitter plates and multiple second splitter plates to rotate, so as to adjust the angle of the splitter plates.

[0008] As a further description of the above technical solution:

[0009] The adjusting component includes two pull ropes that wrap around each connecting rod connected to the first diverter plate once and extend to the outside of the spray head.

[0010] As a further description of the above technical solution:

[0011] The adjusting component also includes a limiting plate fixed to the outside of any of the connecting rods, and a torsion spring is provided on the outer sleeve of the connecting rod, with the two ends of the torsion spring respectively fixedly connected to the inner wall of the spray head and the limiting plate.

[0012] As a further description of the above technical solution:

[0013] The adjusting component also includes a rotating shaft rotatably disposed outside the spray head. Two rope-winding wheels are fixedly connected to the outside of the rotating shaft, and the two pull ropes are respectively wound around the two rope-winding wheels. A handle is fixedly connected to the end of the rotating shaft.

[0014] As a further description of the above technical solution:

[0015] It also includes two baffles fixed inside the spray head, and each of the two baffles has multiple second through holes.

[0016] As a further description of the above technical solution:

[0017] The second through holes on the two baffles are staggered.

[0018] In the above technical solution, the gas spray head for an ALD semiconductor device provided by this utility model has the following beneficial effects:

[0019] This invention: Gas enters the spray head through the air inlet pipe and is evenly discharged through the first through hole, which increases the contact area between the airflow and the substrate, thereby improving the reaction efficiency. The angle of the gas blowing angle can be adjusted by adjusting the angle of the multiple first and second flow dividers to adapt to substrates of different sizes and shapes, thereby improving the adaptability and flexibility of the device. The structure is simple and easy to operate.

[0020] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative only, and are not intended to limit this disclosure.

[0021] This application provides an overview of various implementations or examples of the technology described in this disclosure, and is not a full disclosure of the entire scope or all features of the disclosed technology. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings.

[0023] Figure 1 A three-dimensional structural schematic diagram provided for an embodiment of this utility model;

[0024] Figure 2 This is a frontal longitudinal section structural diagram provided for an embodiment of the present utility model;

[0025] Figure 3This is a top view cross-sectional structural diagram provided for an embodiment of the present utility model;

[0026] Figure 4 Provided for the embodiments of this utility model Figure 3 The enlarged structural diagram at point A is shown.

[0027] Explanation of reference numerals in the attached figures:

[0028] 1. Spray head; 11. First through hole; 12. Air inlet pipe; 2. Baffle; 21. Second through hole; 31. First diverter plate; 32. Second diverter plate; 33. Connecting rod; 34. Pull rope; 35. Limiting plate; 36. Torsion spring; 37. Rotating shaft; 38. Rope pulley; 39. Handle. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0030] Please see Figures 1-4 This embodiment provides a gas spray head for an ALD semiconductor device, including a spray head 1, which is disc-shaped and has multiple first through holes 11 at its bottom for conveying precursor gas. An air inlet pipe 12 is connected to the top of the spray head 1. It also includes multiple first diverter plates 31 and multiple second diverter plates 32, located at the bottom of a baffle 2, used to adjust the angle of the airflow to accommodate different substrate shapes and sizes. Connecting rods 33 are fixedly connected to both ends of each first diverter plate 31 and second diverter plate 32. All three components are rotatably connected to the inner wall of the spray head 1; it also includes two adjusting components, which are used to drive multiple first diverter plates 31 and multiple second diverter plates 32 to rotate, so as to adjust the angle of the diverter plates. The gas enters the spray head 1 through the air inlet pipe 12 and is evenly discharged through the first through hole 11, thereby increasing the contact area between the airflow and the substrate, thereby improving the reaction efficiency. By adjusting the angle of multiple first diverter plates 31 and second diverter plates 32 through the adjusting components, the gas blowing angle can be adjusted to adapt to substrates of different sizes and shapes, thereby improving the adaptability and flexibility of the device. The structure is simple and easy to operate.

[0031] In a further embodiment of this utility model, the adjusting component includes two pull ropes 34. The pull ropes 34 wrap around each connecting rod 33 connected to the first diverter plate 31 and extend to the outside of the spray head 1. The outer surface of the connecting rod 33 is roughened to increase the friction with the pull ropes 34. When the pull ropes 34 are pulled, they can drive multiple connecting rods 33 to rotate, ensuring that each first diverter plate 31 rotates so that the gas is sprayed out of the spray head 1 evenly.

[0032] Furthermore, the adjusting component also includes a limiting plate 35 fixed to the outside of any connecting rod 33, and a torsion spring 36 is provided on the outer sleeve of the connecting rod 33. The two ends of the torsion spring 36 are respectively fixedly connected to the inner wall of the spray head 1 and the limiting plate 35. The friction between the rotating shaft 37 and the spray head 1 is greater than the elastic force of the torsion spring 36. When the rotating shaft 37 is rotated to make the pull rope 34 drive the connecting rod 33 to rotate, the torsion spring 36 will not drive the connecting rod 33 to reset. It will only drive the connecting rod 33 to rotate and reset when the rotating shaft 37 rotates to release the pull rope 34.

[0033] Furthermore, the adjusting component also includes a rotating shaft 37 rotatably disposed outside the spray head 1, with two rope wheels 38 fixedly connected to the outside of the rotating shaft 37, and two pull ropes 34 respectively wound around the two rope wheels 38, and a handle 39 fixedly connected to the end of the rotating shaft 37.

[0034] In a further embodiment of this utility model, two baffles 2 are fixed inside the spray head 1. Each baffle 2 has a plurality of second through holes 21. The baffles 2 are made of porous ceramic material, which has excellent corrosion resistance and can resist the chemical erosion of precursor gases, thus extending their service life.

[0035] Specifically, the second through holes 21 on the two baffles 2 are staggered, and the arrangement direction and density of the second through holes 21 on the two baffles 2 are different, so as to spray the gas evenly onto the substrate surface, eliminate the dead zone of airflow, and improve the uniformity of the deposited film.

[0036] When in use, first install a flow regulating valve and a pressure sensor inside the spray head 1, then install the spray head 1 on the ALD semiconductor device. The pressure sensor detects the gas pressure to ensure the stability of the gas flow and pressure. The flow regulating valve is set on the air inlet pipe 12 to control the gas flow rate entering the spray head 1.

[0037] Rotating handle 39 causes the two rope-winding wheels 38 to rotate synchronously via shaft 37, thereby winding the pull rope 34 and moving it along the surface of connecting rod 33. The rough surface of connecting rod 33 drives its rotation, which in turn rotates baffle 2. The angle of baffle 2 is adjusted according to the size of the substrate. Once adjustment is complete, stop rotating handle 39.

[0038] The precursor gas is delivered to the spray head 1 through the air inlet pipe 12, and then passes through the second through holes 21 on the two baffles 2 to form a uniform airflow. After passing through the baffles 2, it is discharged through the first through hole 11 so that the gas covers the entire substrate surface, thereby causing the precursor gas to react chemically with the substrate surface to form a uniform thin film.

[0039] The foregoing description only illustrates certain exemplary embodiments of the present invention. Undoubtedly, those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A gas spray head for an ALD semiconductor device, comprising a spray head (1), characterized in that: The spray head (1) is disc-shaped, and the bottom of the spray head (1) is provided with a plurality of first through holes (11) for conveying precursor gas. The top of the spray head (1) is connected to an air inlet pipe (12). It also includes multiple first diverter plates (31) and multiple second diverter plates (32). The first diverter plates (31) and the second diverter plates (32) are located at the bottom of the baffle (2) and are used to adjust the angle of the airflow to adapt to different substrate shapes and sizes. Each first diverter plate (31) and the second diverter plate (32) has a connecting rod (33) fixedly connected to both ends. Each connecting rod (33) is rotatably connected to the inner wall of the spray head (1). It also includes two adjusting components, which are used to drive multiple first splitter plates (31) and multiple second splitter plates (32) to rotate, so as to adjust the angle of the splitter plates.

2. The gas spray head for an ALD semiconductor device according to claim 1, characterized in that, The adjusting component includes two pull ropes (34) that wrap around each connecting rod (33) connected to the first diverter plate (31) once and extend to the outside of the spray head (1).

3. The gas spray head for an ALD semiconductor device according to claim 2, characterized in that, The adjusting component also includes a limiting plate (35) fixed outside any of the connecting rods (33), and a torsion spring (36) is provided on the connecting rod (33), with the two ends of the torsion spring (36) respectively fixedly connected to the inner wall of the spray head (1) and the limiting plate (35).

4. The gas spray head for an ALD semiconductor device according to claim 3, characterized in that, The adjusting component also includes a rotating shaft (37) rotatably disposed outside the spray head (1), two rope wheels (38) are fixedly connected to the outside of the rotating shaft (37), and the two pull ropes (34) are respectively wound around the two rope wheels (38). A handle (39) is fixedly connected to the end of the rotating shaft (37).

5. The gas spray head for an ALD semiconductor device according to claim 1, characterized in that, It also includes two baffles (2) fixed inside the spray head (1), and each of the two baffles (2) has a plurality of second through holes (21).

6. The gas spray head for an ALD semiconductor device according to claim 5, characterized in that, The second through holes (21) on the two baffles (2) are staggered.

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