Semiconductor wafer polishing pad needle punched nonwoven fabric

Abstract

The utility model discloses a kind of semiconductor wafer grinding buffer pad needle punching nonwoven fabrics, the buffer pad needle punching nonwoven fabric includes first PET fiber web and second PET fiber web by needle punching composite;The first PET fiber web is reinforced by needle punching;The buffer pad needle punching nonwoven fabric has needle punching hole with diameter 0.4-0.45mm, grammage is 300-350 grams per square meter, thickness is 2.3-2.7mm.The utility model relates to a kind of semiconductor wafer grinding buffer pad needle punching nonwoven fabric, the needle of relatively thin diameter forms relatively thin needle punching hole, can make the surface of needle punching nonwoven fabric flat.The gap between the needle punching hole and fiber formed, can store grinding fluid, and make grinding fluid easily pass through buffer pad, cannot form dry grinding.

Description

Technical Field

[0001] This utility model relates to a needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads, belonging to the technical field of needle-punched nonwoven fabrics for buffer pads. Background Technology

[0002] In semiconductor wafer manufacturing, polishing is a crucial step used to smooth the wafer surface. Cushions play a supporting and buffering role in this process. Traditional cushions are made of materials such as polyurethane or rubber, which have low precision, resulting in an uneven surface after polishing and affecting subsequent processes. Then there's the issue of thermal stability; polyurethane's temperature resistance is limited to 110℃. The heat generated during polishing can cause traditional materials to deform or degrade at high temperatures, affecting polishing results. There's also the problem of material residue; traditional cushions may wear down during polishing, producing particles that contaminate the wafer surface and increase the defect rate. Furthermore, the frequency of maintenance and replacement may be high, potentially increasing maintenance costs over long-term use. Additionally, traditional polyurethane cushions have pores for polishing slurry, but polyurethane itself stores a small amount of slurry; if these pores become clogged, dry polishing can occur. Utility Model Content

[0003] The purpose of this invention is to provide a needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads, which can store grinding fluid and has needle-punched holes and fiber gaps to allow the grinding fluid to pass through.

[0004] To solve the above-mentioned technical problems, the purpose of this utility model is achieved as follows: This utility model relates to a semiconductor wafer grinding buffer pad needle-punched nonwoven fabric, the buffer pad needle-punched nonwoven fabric comprising a first PET fiber web and a second PET fiber web that have been needle-punched composite; the first PET fiber web is needle-punched for reinforcement. The cushioning pad needle-punched nonwoven fabric has needle holes with a diameter of 0.4-0.45 mm, a basis weight of 300-350 grams per square meter, and a thickness of 2.3-2.7 mm.

[0005] Based on the above scheme and as a preferred embodiment of the above scheme: a nylon 6 fiber web 3 is provided between the first PET fiber web and the second PET fiber web.

[0006] Based on the above scheme and as a preferred embodiment, the cross-section of the nylon 6 fiber web is cross-shaped or Y-shaped. Based on the above scheme and as a preferred embodiment of the above scheme: the PET fiber web used by the first PET fiber web and the second PET fiber web includes a first cross-laid layer, a parallel laid layer and a second cross-laid layer arranged in sequence.

[0007] Based on the above scheme and as a preferred embodiment of the above scheme: the polyester fibers used in the parallel web layer have a cross-shaped or Y-shaped cross section.

[0008] The beneficial effects of this utility model are as follows: The needle-punched nonwoven fabric used in this utility model for semiconductor wafer grinding buffer pads has finer diameter needles forming finer needle holes, which makes the surface of the needle-punched nonwoven fabric smooth. The gaps between the formed needle holes and fibers can store grinding fluid, and allow the grinding fluid to easily pass through the buffer pad, preventing dry grinding. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of the needle-punched nonwoven fabric for the semiconductor wafer grinding buffer pad involved in Example 1; Figure 2 This is a schematic diagram of the structure of the needle-punched nonwoven fabric used as a buffer pad for semiconductor wafer grinding, as described in Example 2. Figure 3 This is a schematic diagram of the PET fiber web involved in Example 3.

[0010] The markings in the diagram are explained as follows: 1-First PET fiber web, 2-Second PET fiber web; 3-Nylon 6 fiber web; 11-First cross-laid fiber layer; 12-Parallel web layer; 13-Second cross-laid fiber layer. Detailed Implementation

[0011] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0012] Example 1 Combination Figure 1This embodiment provides a detailed description. The embodiment relates to a semiconductor wafer grinding buffer needle-punched nonwoven fabric, comprising a first PET fiber web 1 and a second PET fiber web 2 formed by needle punching. The first PET fiber web 1 is needle-punched for reinforcement. The buffer pad needle-punched nonwoven fabric has needle holes with a diameter of 0.4-0.45 mm, a basis weight of 300-350 g / m², and a thickness of 2.3-2.7 mm. Specifically, the first PET fiber web 1 is first needle-punched for reinforcement, and then the first PET fiber web 1 and the second PET fiber web 2 formed by web laying are needle-punched for reinforcement. During needle punching, 42# needles are used, with a needle density of 700-1000 needles / cm², of which 800 needles / cm² is selected in this embodiment. The 42# needle has a diameter of 0.42 mm. The nonwoven fabric surface formed using 42# needles is smooth and causes less damage to the PET fibers, thereby reducing PET fiber breakage and the risk of fiber shedding. The PET fibers used have a fineness of 1.67 tex and a length of 38 mm. In this embodiment, the first PET fiber web 1 and the second PET fiber web 2 have the same basis weight.

[0013] The basis weight of the prepared nonwoven fabrics was tested, and the results were 334.8, 336.3, 330.0, and 330.3, with an average of 332.9 grams per square meter. The thickness results were 2.44 mm, 2.43 mm, 2.40 mm, and 2.42 mm, with an average of 2.42 mm. The longitudinal tensile strength results were 924.9 N / m, 882.7 N / m, 905.1 N / m, and 793.0 N / m, with an average of 876.4 N / m. The transverse tensile strength results were 943.9 N / m, 943.2 N / m, 1086.0 N / m, and 1078.0 N / m, with an average of 1012.6 N / m. The longitudinal elongation at break results were 49.6%, 47.5%, 49.9%, and 44.7%, with an average of 47.9%. The test results for transverse elongation at break were 54.1%, 48.6%, 55.2%, and 53.1%, with an average value of 52.8%. All the tested structures met the requirements.

[0014] Example 2 Combination Figure 2This embodiment will be described in detail below. The semiconductor wafer grinding buffer pad needle-punched nonwoven fabric involved in this embodiment differs from that in Embodiment 1 in that a nylon 6 fiber web 3 is disposed between the first PET fiber web 1 and the second PET fiber web 2. The cross-section of the nylon 6 fiber web 2 is cross-shaped or Y-shaped; in this embodiment, a cross-shaped cross-section is chosen. The cross-shaped cross-section of the nylon 6 fibers provides good flow guidance. Furthermore, the nylon 6 fibers have a fineness of 1.67 tex and a length of 38 mm. Compared to polyester fibers of the same fineness, nylon 6 fibers have higher strength, which can improve the breaking strength of the nonwoven fabric.

[0015] Example 3 Combination Figure 3 This embodiment will be described in detail below. The semiconductor wafer grinding buffer pad needle-punched nonwoven fabric involved in this embodiment differs from Embodiment Two in that: the PET fiber webs used in the first PET fiber web 1 and the second PET fiber web 3 include a first cross-laid layer 11, a parallel lay-up layer 12, and a second cross-laid layer 13 arranged sequentially. The polyester fibers used in the parallel lay-up layer 12 have a cross-shaped or Y-shaped cross section.

[0016] The preferred embodiments of this utility model have been described in detail above. It should be understood that those skilled in the art can make numerous modifications and variations based on the concept of this utility model without creative effort. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of this utility model through logical analysis, reasoning, or limited experimentation on the basis of existing technology should be within the scope of protection defined by the claims.

Claims

1. A needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads, characterized in that, The cushioning pad needle-punched nonwoven fabric includes a first PET fiber web (1) and a second PET fiber web (2) that have been needle-punched and composited; the first PET fiber web (1) is needle-punched and reinforced. The cushioning pad needle-punched nonwoven fabric has needle holes with a diameter of 0.4-0.45 mm, a basis weight of 300-350 grams per square meter, and a thickness of 2.3-2.7 mm.

2. The needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads according to claim 1, characterized in that, A nylon 6 fiber mesh (3) is provided between the first PET fiber mesh (1) and the second PET fiber mesh (2).

3. The needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads according to claim 2, characterized in that, The cross-section of the nylon 6 fiber mesh (3) is cross-shaped or Y-shaped.

4. The needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads according to claim 1, characterized in that, The PET fiber webs used in the first PET fiber web (1) and the second PET fiber web (2) include a first cross-laid web layer (11), a parallel web layer (12), and a second cross-laid web layer (13) arranged in sequence.

5. The needle-punched nonwoven fabric for semiconductor wafer grinding buffer pads according to claim 4, characterized in that, The polyester fibers used in the parallel web layer (12) have a cross-shaped or Y-shaped cross section.

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