A jig for oxidizing a semiconductor-grade silicon carbide ceramic

Abstract

The utility model relates to the field of ceramics discloses a kind of semiconductor grade silicon carbide ceramic graphite oxidation jigs, including jig base, jig base top end is equipped with placing groove, placing groove top end is equipped with baffle, two The baffle side close is equipped with clamping groove.The utility model is simple in structure, convenient and practical, simple in material manufacturing process operation, convenient and efficient, the silicon carbide material of oxidation diameter 400mm is simultaneously oxidized, and the stacking efficiency of oxidation is higher, oxidation is more sufficient, reduces material fragmentation risk.

Description

Technical Field

[0001] This utility model relates to the field of ceramics, and in particular to a fixture for semiconductor-grade silicon carbide ceramic graphite oxidation. Background Technology

[0002] In the semiconductor manufacturing field, semiconductor-grade silicon carbide ceramics have become an important material for manufacturing key components (such as focusing rings and wafer carriers) due to their superior performance. This material possesses high-temperature resistance, high hardness, good chemical stability, and excellent resistance to plasma etching. Its low coefficient of thermal expansion, high thermal conductivity, and electrical properties similar to those of silicon wafers make it ideal for use as a focusing ring material.

[0003] The preparation of the focusing ring raw material, besides chemical vapor deposition, requires annealing to relieve material stress and oxidation to remove graphite, in order to obtain a solid silicon carbide raw material. Finally, the focusing ring is obtained through finishing and cleaning processes. In this process, the oxidation to remove graphite has the potential risks of long oxidation time, incomplete oxidation, and material adhesion leading to separation and cracking after oxidation. To solve the above problems, this invention designs a fixture for semiconductor-grade silicon carbide ceramic graphite oxidation. Utility Model Content

[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a fixture for the oxidation of semiconductor ceramic graphite. This fixture has a simple structure, is convenient and practical, and the material preparation process is simple, convenient and efficient. It can oxidize silicon carbide materials with a diameter of 400mm. At the same time, the oxidation efficiency is higher than that of stacking, the oxidation is more complete, and the risk of material breakage is reduced.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a fixture for semiconductor-grade silicon carbide ceramic graphite oxidation, comprising a fixture base, a placement groove at the top of the fixture base, a partition at the top of the placement groove, and a slot on one side of the two partitions.

[0006] Furthermore, the partition is made of quartz glass.

[0007] Furthermore, air vents are provided at both ends of the fixture base.

[0008] Furthermore, handles are fixedly connected to both ends of the fixture base.

[0009] Furthermore, the top of the slot is provided with material to be oxidized.

[0010] Furthermore, the number of partitions is 22.

[0011] This utility model has the following beneficial effects: In this invention, the fixture has a simple and convenient structure, and the material manufacturing process is simple, convenient and efficient. It can oxidize silicon carbide materials with a diameter of 400mm. At the same time, the oxidation efficiency is higher than that of stacking, the oxidation is more complete, and the risk of material breakage is reduced. Attached Figure Description

[0012] Figure 1 This is a perspective view of a fixture for semiconductor-grade silicon carbide ceramic graphite oxidation proposed in this utility model; Figure 2 This is a half-sectional schematic diagram of a fixture for semiconductor-grade silicon carbide ceramic graphite oxidation proposed in this utility model.

[0013] Legend: 1. Slot; 2. Air inlet; 3. Partition; 4. Fixture base; 5. Material to be oxidized; 6. Placement slot; 7. Handle. Detailed Implementation

[0014] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0015] Reference Figures 1-2 This utility model provides an embodiment of a fixture for the oxidation of semiconductor-grade silicon carbide ceramic graphite, comprising a fixture base 4 made of quartz glass with a refractory temperature of 1600℃. The fixture base 4 serves as the overall support inside the graphite oxidation furnace. The outer surface of the fixture base 4 is fitted with heat-resistant steel. A placement groove 6 is formed at the top of the fixture base 4, and a partition 3, also made of quartz glass with a refractory temperature of 1600℃ and being transparent, is provided at the top of the placement groove 6. A slot 1 is provided on one side of the two partitions 3, serving as a placement area for graphite oxidation materials. The materials are separated from each other by the partitions 3. An air vent 2 is provided in the middle of the partition 3 to facilitate sufficient contact between O2 and graphite, while also facilitating the emission of CO2. Air vents 2 are also provided at both the front and rear ends of the fixture base 4 to facilitate sufficient contact between O2 and graphite, while also facilitating the emission of CO2. Handles 7 are fixedly connected to both ends of the heat-resistant steel material on the surface of the fixture base 4. The handles 7 are integrally formed from the heat-resistant steel and the surface material, and their surfaces are pressed with anti-slip threads to prevent errors during movement, facilitating rapid loading and unloading of materials using robotic arms / special tools in high-temperature environments. The top of the slot 1 holds the material to be oxidized 5; the part in contact with the workpiece uses a ceramic fiber pad to prevent scratching the workpiece surface and ensure the surface quality of the semiconductor-grade workpiece. There are 22 partitions 3, allowing multiple materials to be oxidized 5 to be oxidized simultaneously.

[0016] Working principle: The fixture base 4 is placed first in the graphite oxidation furnace, and the partition plates 3 are placed in the placement slots 6 of the fixture base 4. The material to be oxidized 5 is placed in the slots 1 between the partition plates 3. The fixture base 4 and the partition plates 3 are designed with air vents 2 to facilitate full contact between O2 and graphite, and to facilitate the emission of CO2. The installed fixture base 4 is placed in the graphite oxidation furnace, and the process is carried out as follows: room temperature → 850℃ → oxidation for 12 hours (850℃) → cooling. The graphite in the middle of the silicon carbide material can be completely oxidized to obtain two pieces of silicon carbide material. Using this fixture greatly reduces the phenomenon of incomplete graphite oxidation, shortens the oxidation time, and significantly reduces the risk of product breakage.

[0017] It is worth noting that the protection measures involved in the above embodiments all adopt the corresponding existing technologies according to the actual situation, and therefore will not be described in detail in the embodiments of this application.

[0018] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A fixture for semiconductor-grade silicon carbide ceramic graphite oxidation, comprising a fixture base (4), characterized in that: The fixture base (4) has a placement groove (6) at the top, and a partition (3) is provided at the top of the placement groove (6). A slot (1) is provided on the side of the two partitions (3) that are close to each other.

2. The fixture for semiconductor-grade silicon carbide ceramic graphite oxidation according to claim 1, characterized in that: An air vent (2) is provided in the middle of the partition (3).

3. The fixture for semiconductor-grade silicon carbide ceramic graphite oxidation according to claim 1, characterized in that: The fixture base (4) has air vents (2) at both the front and rear ends.

4. The fixture for semiconductor-grade silicon carbide ceramic graphite oxidation according to claim 1, characterized in that: The left and right ends of the fixture base (4) are fixedly connected to handles (7).

5. The fixture for semiconductor-grade silicon carbide ceramic graphite oxidation according to claim 1, characterized in that: The top of the slot (1) is provided with the material to be oxidized (5).

6. The fixture for semiconductor-grade silicon carbide ceramic graphite oxidation according to claim 1, characterized in that: The number of partitions (3) is 22.

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