A colloidal quantum dot dual-band detection device based on photoelectrochemical conversion

Abstract

The utility model belongs to photoelectric detection technical field discloses a kind of colloidal quantum dots double-wave band detection device based on photoelectrochemical conversion, photoelectric chemical conversion tank top is provided with light window, cylindrical electrolyte tank is filled with high concentration electrolyte, tank upper portion is provided with electrolyte drain port, tank lower portion is provided with electrolyte supply port, two electrode detection device includes colloidal quantum dots PN type photoanode, carbon rod cathode, power supply, colloidal quantum dots PN type photoanode and carbon rod cathode are immersed in electrolyte, and they are connected by power supply through wire;PN type photoanode includes FTO glass substrate, N type visible light absorption quantum dot layer, P type short-wave infrared absorption quantum dot layer and hole consumption layer sequentially distributed from top to bottom, and photoanode is connected with power supply and carbon rod cathode by FTO glass substrate.The utility model can reduce the overall cost of device, with the advantage of large-scale production.

Description

Technical Field

[0001] This utility model belongs to the field of photoelectric detection technology and relates to a colloidal quantum dot dual-band detection device based on photoelectrochemical conversion. Background Technology

[0002] Limited by semiconductor materials and device structures, current photoelectric detection systems are typically monochromatic imaging systems, such as visible light or short-wave infrared imaging systems. However, there is an urgent need for dual-band photoelectric detection (visible light / short-wave infrared) in complex environments, including machine vision, night vision reconnaissance, and cell tissue imaging. Short-wave infrared wavelengths, between 800 and 2300 nm, are characterized by their ability to penetrate smoke and water vapor, while visible light wavelengths, between 400 and 800 nm, primarily provide color information. Multispectral and multicolor collaborative imaging can significantly improve scene recognition capabilities in complex environments. Its core significance lies in enhancing the dimensionality of target information acquisition in complex environments, effectively reducing clutter interference. Single-band detection can only respond to light information within a fixed wavelength range, easily losing target information in complex optical environments and failing to distinguish spectral characteristics of different bands. For example, in autonomous driving, machine vision recognition needs to utilize short-wave infrared to penetrate smoke and water vapor to identify target information ahead and behind, and use visible light detection to capture color details, thereby conducting a comprehensive analysis of foggy driving environments and making driving decisions. Single-band devices are insufficient to meet the special needs of such complex environments. While traditional semiconductor detectors offer excellent detection performance, they are expensive, have complex manufacturing processes, and are difficult to implement on a single chip with dual-band detection capabilities.

[0003] Colloidal quantum dots have emerged as a promising photoelectric detection material due to their tunable band structure and solution-processable characteristics, offering advantages in the fabrication of low-cost optoelectronic devices. Photochemical detectors based on colloidal quantum dots exhibit moderate response speeds and low thermal noise due to their discrete energy levels, meeting the detection performance requirements of markets such as image sensing and infrared reconnaissance. However, challenges such as multi-band quantum dot stacking and impeded mass transfer at the electrolyte interface hinder the development of dual-band colloidal quantum dot detectors. Utility Model Content

[0004] (a) Purpose of the utility model The purpose of this invention is to provide a colloidal quantum dot dual-band detector based on photoelectrochemical conversion that is low in manufacturing cost and suitable for large-scale production.

[0005] (II) Technical Solution To address the aforementioned technical problems, this invention provides a colloidal quantum dot dual-band detection device based on photoelectrochemical conversion. A light window is provided at the top of the photoelectrochemical conversion tank. A cylindrical electrolyte tank is filled with a high-concentration electrolyte. An electrolyte drain port is located at the top of the tank, and an electrolyte supply port is located at the bottom. The two-electrode detection device includes a colloidal quantum dot PN-type photoanode, a carbon rod cathode, and a power supply. Both the colloidal quantum dot PN-type photoanode and the carbon rod cathode are immersed in the electrolyte and connected by the power supply via a wire. The PN-type photoanode includes, from top to bottom, an FTO glass substrate, an N-type visible light absorbing quantum dot layer, a P-type short-wave infrared absorbing quantum dot layer, and a hole-dissipating layer. The photoanode is connected to the power supply and the carbon rod cathode through the FTO glass substrate.

[0006] Furthermore, the high-concentration electrolyte is a sodium sulfite solution with a concentration of 5 mol / L.

[0007] Furthermore, the inner diameter of the light window at the top of the groove is 10.0 mm.

[0008] Furthermore, the thickness of the N-type visible light absorbing quantum dot layer in the colloidal quantum dot PN-type photoanode is 300~500 nanometers.

[0009] Furthermore, the thickness of the P-type short-wave infrared absorbing quantum dot layer is 500~700 nanometers.

[0010] Furthermore, the hole-consuming layer in the colloidal quantum dot PN-type photoanode is a mixed metal hydroxy oxide of FeOOH and NiOOH, with the iron-nickel metal ratio between 1 and 1.5.

[0011] Furthermore, the colloidal quantum dot PN-type photoanode is mounted in the cylindrical electrolyte tank via a photoanode support base, and the carbon rod cathode is mounted in the cylindrical electrolyte tank via a cathode support base.

[0012] Furthermore, the photoelectric anode support base, cathode support base, and cylindrical electrolyte tank are integrally formed.

[0013] Furthermore, the colloidal quantum dot PN-type photoanode is encapsulated with epoxy resin.

[0014] Furthermore, the colloidal quantum dot PN-type photoanode leaks out a working area larger than the light window region.

[0015] (III) Beneficial Effects The aforementioned technical solution provides a colloidal quantum dot dual-band detector based on photoelectrochemical conversion, capable of detecting both visible and short-wave infrared light. Based on simple functional layer stacking, this device eliminates the need for complex doping and ion implantation processes. Furthermore, the high-concentration electrolyte alleviates interfacial mass transfer obstruction, and the bottom-in, top-out electrolyte circulation port facilitates the replacement of the high-concentration electrolyte. Simultaneously, the solution synthesis and large-scale preparation of colloidal quantum dots reduce the overall device cost, offering advantages for large-scale production. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the colloidal quantum dot dual-band detector of this utility model, wherein: 11, photoelectrochemical conversion tank, 12, two-electrode detection device, 111, optical window, 112, electrolyte drain port, 113, cylindrical electrolyte tank, 114, electrolyte inlet, 121, colloidal quantum dot PN type photoanode, 122, carbon rod cathode, 123, high-concentration electrolyte, 124, power supply, 125, cathode support base, 126, photoanode support base.

[0017] Figure 2 This is a top-view schematic diagram of the colloidal quantum dot dual-band detector structure of this utility model, wherein: 111, optical window; 112, electrolyte drain port; 113, cylindrical electrolyte tank; 114, electrolyte inlet; 124, power supply.

[0018] Figure 3 This is a schematic diagram of the PN-type photoanode structure of the colloidal quantum dot dual-band detector of this utility model, wherein: 1211, FTO glass substrate, 1212, N-type visible light absorbing quantum dot layer, 1213, P-type short-wave infrared absorbing quantum dot layer, 1214, hole consumption layer. Detailed Implementation

[0019] To make the objectives, contents, and advantages of this utility model clearer, the specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples.

[0020] like Figure 1 As shown, the colloidal quantum dot dual-band detector based on photoelectrochemical conversion in this embodiment includes a photoelectrochemical conversion tank 11 and a two-electrode detection device 12. A light window 111 is provided at the top of the photoelectrochemical conversion tank. A cylindrical electrolyte tank 113 is filled with a high-concentration electrolyte. An electrolyte drain port 112 is provided at the top of the tank, and an electrolyte supply port 114 is provided at the bottom of the tank.

[0021] The inner diameter of the light window 111 is 10.0 mm; the electrolyte is a high-concentration sodium sulfite electrolyte 123 with a concentration of 5 mol / L.

[0022] The two-electrode detection device includes a colloidal quantum dot PN-type photoanode 121, a carbon rod cathode 122, and a power supply 124. The colloidal quantum dot PN-type photoanode 121 and the carbon rod cathode 122 are both immersed in an electrolyte and are connected by the power supply 124 through a wire.

[0023] The colloidal quantum dot PN-type photoanode 121 is set in a cylindrical electrolyte tank through a photoanode support base 126, and the carbon rod cathode 122 is set in a cylindrical electrolyte tank through a cathode support base 125. To avoid short circuits, the colloidal quantum dot PN-type photoanode 121 is encapsulated with epoxy resin, so that the working area of ​​the colloidal quantum dot PN-type photoanode 121 is slightly larger than the light window area.

[0024] like Figure 2 As shown, when viewed from the top of the photoelectrochemical conversion tank, light of different wavelengths enters the top light window and is irradiated onto the colloidal quantum dot PN-type photoanode through a high-concentration electrolyte of a certain thickness.

[0025] like Figure 3 As shown, in the colloidal quantum dot PN-type photoanode 121, from top to bottom are FTO glass substrate 1211, N-type visible light absorbing quantum dot layer 1212, P-type short-wave infrared absorbing quantum dot layer 1213, and hole depletion layer 1214.

[0026] The colloidal quantum dot PN-type photoanode 121 is connected to the power supply 124 and the carbon rod cathode 122 through the FTO glass substrate 1211. The colloidal quantum dot PN-type photoanode 121 and the carbon rod cathode 122 are respectively supported by their respective bottom support bases.

[0027] The cylindrical electrolyte tank 113, cathode support base 125, and photoelectric anode support base 126 are integrally formed.

[0028] The thickness of the N-type visible light absorbing quantum dot layer 1212 is 300~500 nanometers, and the thickness of the P-type short-wave infrared absorbing quantum dot layer 1213 is 500~700 nanometers; the hole-consuming layer 1214 is a mixed metal hydroxy oxide of FeOOH and NiOOH, with the iron-nickel metal ratio between 1 and 1.5.

[0029] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A colloidal quantum dot dual-band detection device based on photoelectrochemical conversion, characterized in that, A light window is set at the top of the photoelectrochemical conversion tank. The cylindrical electrolyte tank is filled with high-concentration electrolyte. An electrolyte drain port is set at the top of the tank and an electrolyte supply port is set at the bottom of the tank. The two-electrode detection device includes a colloidal quantum dot PN-type photoanode, a carbon rod cathode, and a power supply. Both the colloidal quantum dot PN-type photoanode and the carbon rod cathode are immersed in the electrolyte and are connected by the power supply through wires. The PN-type photoanode includes an FTO glass substrate, an N-type visible light absorbing quantum dot layer, a P-type short-wave infrared absorbing quantum dot layer, and a hole-dissipating layer arranged sequentially from top to bottom. The photoanode is connected to the power supply and the carbon rod cathode through the FTO glass substrate.

2. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 1, characterized in that, The high-concentration electrolyte is a sodium sulfite solution with a concentration of 5 mol / L.

3. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 2, characterized in that, The inner diameter of the light window at the top of the groove is 10.0 mm.

4. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 3, characterized in that, The thickness of the N-type visible light absorbing quantum dot layer in the colloidal quantum dot PN-type photoanode is 300~500 nanometers.

5. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 4, characterized in that, The thickness of the P-type short-wave infrared absorbing quantum dot layer is 500~700 nanometers.

6. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 5, characterized in that, The hole-consuming layer in the colloidal quantum dot PN-type photoanode is a mixed metal hydroxy oxide of FeOOH and NiOOH, with the iron-nickel metal ratio between 1 and 1.

5.

7. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 6, characterized in that, The colloidal quantum dot PN-type photoanode is mounted in a cylindrical electrolyte tank via a photoanode support base, and the carbon rod cathode is mounted in a cylindrical electrolyte tank via a cathode support base.

8. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 7, characterized in that, The photoelectric anode support base, cathode support base, and cylindrical electrolyte tank are integrally formed.

9. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 8, characterized in that, The colloidal quantum dot PN-type photoanode is encapsulated with epoxy resin.

10. The colloidal quantum dot dual-band detection device based on photoelectrochemical conversion as described in claim 9, characterized in that, The working area of ​​the colloidal quantum dot PN-type photoanode is larger than that of the light window region.

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