A temperature detection device for a PECVD chamber

Abstract

The present disclosure relates to the technical field of vacuum detection, and provides a temperature detection device for a PECVD chamber, comprising a mounting flange for sealingly mounting to a window port of the chamber; a plurality of thermocouples fixedly mounted on the mounting flange, with the wires of the plurality of thermocouples penetrating through the mounting flange and extending into the chamber, and the ends of the wires fixedly arranged at a plurality of temperature measuring points in the chamber at a preset fixed spatial position relationship; an interface adaptation assembly sealingly connected to one end of the mounting flange; a signal transmission assembly comprising a vacuum connector and a data acquisition module, with the vacuum connector sealingly mounted to the other end of the interface adaptation assembly; the signal leads of the plurality of thermocouples penetrating through a channel in the interface adaptation assembly and connected to the terminal posts at one end of the vacuum connector, and the other end of the vacuum connector connected to the data acquisition module, thereby at least improving the accuracy and reliability of temperature detection of the PECVD chamber.

Description

Technical Field

[0001] This disclosure relates to the field of vacuum detection technology, and in particular to a temperature detection device for a PECVD chamber. Background Technology

[0002] Currently, vacuum equipment is widely used in numerous manufacturing fields, from small items like light bulbs and watches to the manufacture of critical components in automobiles and aerospace, all of which rely heavily on vacuum technology. As an important branch of vacuum equipment, vacuum heat treatment equipment helps users control the microstructure and properties of materials while maintaining their composition, thereby obtaining products with different functional characteristics.

[0003] Against this backdrop, the accuracy and reliability of temperature detection are particularly critical. Especially in plasma-enhanced chemical vapor deposition (PECVD) processes, the temperature uniformity within the chamber directly determines the thickness and compositional uniformity of the thin film. Uneven temperature distribution within the chamber will lead to fluctuations in the performance of the deposited film, thus significantly reducing wafer yield. Therefore, achieving precise sensing of the temperature field within the PECVD chamber has become a core requirement for improving process stability and product consistency. Utility Model Content

[0004] This disclosure provides a temperature detection device for a PECVD chamber, which at least helps to improve the accuracy and reliability of temperature detection in a PECVD chamber.

[0005] This disclosure provides a temperature detection device for a PECVD chamber, comprising: a mounting flange for sealing and mounting to a viewing port of the chamber; an interface adapter assembly, one end of which is sealed and connected to the mounting flange; a signal transmission assembly including a vacuum connector and a data acquisition module, the vacuum connector being sealed and mounted to the other end of the interface adapter assembly; multiple thermocouples, the thermocouple wires passing through the mounting flange and extending into the chamber, the ends of the thermocouple wires corresponding to multiple temperature measuring points in the chamber in a preset fixed spatial relationship; signal leads of the multiple thermocouples exiting from the mounting flange and passing through a channel inside the interface adapter assembly, connecting to a terminal at one end of the vacuum connector, the other end of the vacuum connector being connected to the data acquisition module.

[0006] Optionally, the interface adapter component includes components for connection with a first flange, a reducing pipe, and a second flange; wherein the first flange is sealed to the mounting flange, the first flange is connected to the second flange via the reducing pipe, and the vacuum connector is sealed to the second flange.

[0007] Optionally, the first flange is provided with an annular groove for installing a sealing ring.

[0008] Optionally, the interface adapter assembly further includes a locking mechanism for securing the second flange and the vacuum connector.

[0009] Optionally, the length of the reducing pipe is 20mm to 50mm.

[0010] Optionally, the inner wall roughness of the variable diameter pipe is 0.1μm~0.8μm.

[0011] Optionally, the diameter of the hybrid wire is 0.3mm to 1mm.

[0012] Optionally, the length of the coupling wire extending from where it exits the mounting flange into the cavity is 15mm to 30mm.

[0013] Optionally, a sealing ring is installed between the mounting flange and the chamber wall around the viewing window port of the chamber.

[0014] Optionally, the data acquisition module is a multi-channel temperature recorder.

[0015] The technical solution provided in this disclosure has at least the following advantages: The temperature detection device disclosed herein achieves simultaneous, fixed-point, and stable acquisition of temperatures at multiple locations within the chamber by passing multiple thermocouple wires through a mounting flange and fixing the ends of the wires at multiple temperature measurement points within the chamber in a preset fixed spatial relationship. This improves the spatial coverage and data consistency of temperature measurements. The mounting flange can be sealed to the viewing window port of the chamber, facilitating device integration without requiring modification of the chamber structure. One end of the interface adapter component is sealed to the mounting flange, and the other end is sealed to install a vacuum connector, forming a reliable signal output path. The signal leads of multiple thermocouples are connected to the vacuum connector through the internal channel of the interface adapter component and finally connected to the data acquisition module, thereby achieving stable transmission and real-time reading of multiple temperature signals while maintaining the chamber's airtightness. Attached Figure Description

[0016] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0017] Figure 1 This is a schematic diagram of the structure of the temperature detection device provided in the embodiments of this disclosure; Figure 2 This is a schematic diagram showing the location of the temperature measuring point in the cavity of the temperature detection device provided in this embodiment of the disclosure; Figure 3This is a schematic diagram showing another location of the temperature measuring point in the chamber of the temperature detection device provided in this embodiment of the disclosure.

[0018] Explanation of reference numerals in the attached figures: Temperature detection device 10, mounting flange 1, thermocouple 2, interface adapter assembly 3, signal transmission assembly 4, thermocouple wire 21, end 22, vacuum connector 41, data acquisition module 42, signal lead 23, first flange 31, reducer 32, second flange 33, sealing ring 34, locking mechanism 35, thermocouple inlet hole 5, center temperature measuring point A, edge temperature measuring point B, process kit temperature measuring point C, valve interface temperature measuring point D. Detailed Implementation

[0019] In the fundamental technology of plasma-enhanced chemical vapor deposition (PECVD), the thickness and compositional consistency of the thin film are highly dependent on the uniformity of the temperature field within the chamber. However, in practical applications, it has been found that existing technologies struggle to effectively measure the temperature at multiple points within the PECVD chamber under real-world process conditions. This results in unpredictable and uncontrollable temperature distribution, leading to fluctuations in thin film performance and a decrease in wafer yield.

[0020] Further analysis reveals that the root cause of this problem lies in three technical bottlenecks: First, the lack of in-situ temperature measurement methods before the process, meaning that it is currently impossible to directly obtain the cavity temperature under actual process conditions such as vacuum and preheating. The temperature can only be inferred from the post-process film quality, resulting in a lengthy debugging cycle. Second, insufficient spatial resolution of temperature measurement; traditional infrared thermometry or single-point thermocouples can only reflect the temperature of local areas, making it difficult to cover key locations such as the center, edges, and the periphery of heated components, and thus unable to characterize the overall temperature distribution. Third, poor adaptability to high vacuum environments; the PECVD chamber needs to maintain a temperature ≤10°C. -2 The high vacuum of Pa makes it difficult for conventional temperature measuring devices to work stably and cleanly in this environment due to limitations in sealing structure or materials.

[0021] To address the aforementioned technical issues, this disclosure creatively proposes a temperature detection device for a PECVD chamber. This device involves passing multiple thermocouple wires through a pre-defined, fixed spatial relationship through a sealing flange that can be installed at the viewing window port and extending into the chamber. An interface adapter assembly and a vacuum connector are used to construct a high-vacuum compatible signal path from the temperature measurement point inside the chamber through the mounting flange and the interface adapter assembly to the data acquisition module. This enables synchronous, accurate, and in-situ temperature measurement at multiple key locations within the chamber before and under process conditions.

[0022] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "multiple" means two or more, unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0025] In the description of the embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the embodiments of this disclosure and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the embodiments of this disclosure. For example, if the device or element in the illustration is inverted, then the element described as "below," "under," "below," or "bottom" of other elements or features will be oriented "above" or "top" of said other elements or features. Therefore, the term "below" may, depending on the context in which the term is used, encompass both above and below orientations, which will be obvious to those skilled in the art. Materials may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0026] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0027] In the accompanying drawings corresponding to the embodiments of this disclosure, the thickness and area of ​​the layers are enlarged for better understanding and ease of description. Furthermore, when describing a component as "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor on a portion of the edge of the entire surface.

[0028] In the description of the embodiments of this disclosure, when a component "includes" another component, other components are not excluded unless otherwise stated, and may be further included. The formation or placement of a second component above or on a first component, or on the surface of a first component, or on one side of a first component, may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be placed between the first and second components, thereby preventing direct contact between the first and second components. For simplicity and clarity, various components may be drawn at different scales. In the drawings, some layers / components may be omitted for simplicity. Unless otherwise specified, the formation or placement of a second component on the surface of a first component refers to direct contact between the first and second components. The term "component" can refer to a layer, film, region, portion, structure, etc.

[0029] The terminology used in the description of the various embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments and the appended claims, the term "component" is also intended to include the plural form unless the context clearly indicates otherwise. Components include layers, films, regions, or plates, etc.

[0030] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0031] Figure 1This is a schematic diagram of the structure of a temperature detection device provided in an embodiment of this disclosure.

[0032] refer to Figure 1 The temperature detection device 10 includes: a mounting flange 1, multiple thermocouples 2, an interface adapter component 3, and a signal transmission component 4.

[0033] Specifically, the mounting flange 1 is used to seal the viewing port of the chamber; the interface adapter assembly 3 is sealed to the mounting flange 1 at one end; the signal transmission assembly 4 includes a vacuum connector 41 and a data acquisition module 42, with the vacuum connector 41 sealed to the other end of the interface adapter assembly 3; multiple thermocouples 2, with the thermocouple wires 21 passing through the mounting flange 1 and extending into the chamber, and the ends 22 of the thermocouple wires corresponding to multiple temperature measuring points in the chamber in a preset fixed spatial relationship; the signal leads 23 of the multiple thermocouples 2 pass out from the mounting flange 1, pass through the channel inside the interface adapter assembly 3, and connect to the terminal block at one end of the vacuum connector 41, with the other end of the vacuum connector 41 connected to the data acquisition module 42.

[0034] Specifically, this solution fully utilizes the existing optical window of the PECVD chamber as a temperature measurement access port, achieving a quick, detachable, and highly airtight connection to the chamber via mounting flange 1. This design eliminates the need for additional openings or structural modifications to the chamber body, effectively avoiding damage to the existing vacuum system. Furthermore, its standardized interface facilitates reuse across different devices, significantly reducing implementation costs. More importantly, this connection method reliably maintains a high vacuum environment (≤10) within the chamber. - 2 (Pa) to ensure that the temperature measurement process does not interfere with the stability of the deposition process.

[0035] Multiple thermocouples 2 have their wires 21 passing through the mounting flange 1 and extending into the cavity. This allows the ends 22 of each thermocouple to correspond to and measure multiple key areas within the cavity (such as the central area, edge area, and the periphery of the heating plate) in a pre-defined, fixed spatial relationship. This enables simultaneous, in-situ acquisition of multi-point temperature data before or during the process, overcoming the limitations of traditional single-point temperature measurement in reflecting the overall temperature distribution. Because the measurement points are precisely fixed, each measurement has a highly consistent spatial correspondence, significantly improving data repeatability and comparability. Compared to traditional single-point temperature measurement, the data coverage is increased by 200%–400%, accurately capturing temperature distribution differences. Based on this, the system can accurately identify temperature gradients within the cavity, reducing the temperature uniformity judgment error from the traditional ±5℃ to ±0.5℃, providing a highly reliable basis for the optimization and control of thin film deposition processes.

[0036] The interface adapter component 3 is connected between the mounting flange 1 and the signal transmission component 4. It has a sealed channel inside to accommodate and guide the signal leads 23 of multiple thermocouples. This component not only ensures the continuity of vacuum sealing throughout the entire path from the inside to the outside, but also provides mechanical support and orderly wiring space for multiple leads, effectively preventing the leads from shaking, crossing or short-circuiting during operation or thermal cycling.

[0037] The signal transmission component 4 includes a vacuum connector 41 and an external data acquisition module 42. The vacuum connector 41 can be a glass-metal sealed vacuum connector. Glass-metal sealing technology enables reliable extraction of multiple electrical signals under high vacuum conditions: its leakage rate is ≤1×10⁻⁶. -9 Pa·m 3 / s, fully meeting the stringent requirements of PECVD chambers for ultra-high vacuum sealing; the materials used (such as Kovar alloy and borosilicate glass) possess excellent high-temperature resistance and extremely low gas release characteristics. After use, the increase in the number of ≥0.1μm particles in the chamber is less than 5 particles / ㎡, reducing the risk of particle contamination by approximately 90% compared to traditional disassembly-based temperature measurement methods, thereby improving wafer yield by 5%~8%. In addition, multiple signals are stably transmitted to the data acquisition module 42 through this connector, supporting real-time and synchronous reading. This eliminates the need for iterative processes of trial run-testing-adjustment during process debugging, compressing the original debugging cycle of 4 to 8 hours to less than 1 hour, and increasing equipment uptime by 20%~25%.

[0038] The temperature detection device disclosed herein achieves simultaneous, fixed-point, and stable acquisition of temperatures at multiple locations within the chamber by passing multiple thermocouple wires through a mounting flange and fixing the ends of the wires at multiple temperature measurement points within the chamber in a preset fixed spatial relationship. This improves the spatial coverage and data consistency of temperature measurements. The mounting flange can be sealed to the viewing window port of the chamber, facilitating device integration without requiring modification of the chamber structure. One end of the interface adapter component is sealed to the mounting flange, and the other end is sealed to install a vacuum connector, forming a reliable signal output path. The signal leads of multiple thermocouples are connected to the vacuum connector through the internal channel of the interface adapter component and finally connected to the data acquisition module, thereby achieving stable transmission and real-time reading of multiple temperature signals while maintaining the chamber's airtightness.

[0039] The embodiments of this disclosure will now be described in more detail with reference to the accompanying drawings.

[0040] In some embodiments, the interface adapter component 3 includes components for connecting to a first flange 31, a reducer 32, and a second flange 33; wherein the first flange 31 is sealed to the mounting flange 1, the first flange 31 is connected to the second flange 33 via the reducer 32, and the vacuum connector 41 is sealed to the second flange 33.

[0041] The first flange 31 can be a KF25 flange, and the second flange 33 can be a KF40 flange.

[0042] Specifically, the KF25 flange is mated with the mounting flange 1 to achieve a high-vacuum sealed connection. Its size matches the standard small-diameter port of the original optical window of the PECVD chamber, ensuring compatibility with the chamber and reliability of the vacuum seal. The KF25 flange is connected to the KF40 flange through the intermediate reducer 32. The reducer 32 plays a role in diameter conversion, smoothly transitioning the smaller KF25 interface to the larger KF40 interface. One end of the KF40 flange is connected to the reducer 32, and the other end is sealed to the vacuum connector 41.

[0043] In other words, the KF40 flange, as a standard vacuum interface component, achieves a high-vacuum sealed assembly with the corresponding mounting base of the vacuum connector 41 via conventional vacuum fastening methods such as bolts and clamps. This structure ensures that the thermocouple signal lead is reliably led out of the chamber from the sealed channel formed by the KF25 flange, the reducer 32, and the KF40 flange, and finally through the vacuum connector 41, maintaining high vacuum integrity throughout the entire process.

[0044] On the one hand, the KF25 end is directly compatible with the existing viewing window interface of the chamber, requiring no modification to the equipment. On the other hand, the transition to KF40 via a variable diameter structure provides ample installation space and wiring redundancy for the multi-channel glass-metal sealed connector, while ensuring high vacuum sealing performance of the entire signal output path. Thus, without sacrificing process cleanliness and vacuum integrity, it effectively balances equipment compatibility and the multi-signal output requirements for multi-point temperature measurement, providing reliable mechanical support and sealing assurance for in-situ temperature monitoring in the PECVD chamber.

[0045] In some embodiments, the first flange 31, the reducer 32, and the second flange 33 can be made of 316L stainless steel. This material has excellent high-temperature resistance, low gas release characteristics, and high vacuum compatibility, enabling it to operate stably for a long time in the PECVD process environment, while effectively suppressing metal ion precipitation and particulate contamination, ensuring the cleanliness of the chamber.

[0046] In some embodiments, the first flange 31 is provided with an annular groove for mounting the sealing ring 34.

[0047] Specifically, the annular groove is typically formed on the mating end face of the first flange 31 to embed a fluororubber or metal sealing ring. When the first flange 31 is pressed against the mounting flange 1, the sealing ring 34 is deformed under pressure within the groove, filling the interfacial micro-gaps, thereby forming a reliable high-vacuum seal. This design not only improves sealing stability but also prevents the sealing ring from shifting or being extruded during vacuuming, ensuring a seal within ≤10°C. -2The process environment of Pa maintains a low leakage rate for a long time.

[0048] In some embodiments, the interface adapter component 3 further includes a locking mechanism 35 for securing the second flange 33 and the vacuum connector 41.

[0049] Specifically, the locking mechanism 35 can be a standard vacuum quick-release clamp (such as an ISO-KF type clamp), a bolt flange clamping assembly, or other mechanical clamping structures, and is fitted onto the outer periphery of the mating flange of the second flange 33 and the vacuum connector 41. When the locking mechanism 35 is pre-tightened, the two flange end faces are uniformly pressed together, causing the sealing ring (such as a fluororubber O-ring or a metal gasket) between them to undergo controllable compression deformation, thereby forming a high-vacuum sealing interface with good airtightness.

[0050] In some embodiments, the locking mechanism 35 may be made of 316L stainless steel.

[0051] The locking mechanism 35 is designed to ensure that the vacuum connector 41 operates under high vacuum (≤10) in the PECVD chamber. -2 It does not loosen or leak under high-temperature process conditions (Pa); and provides a reliable connection method that can be repeatedly disassembled and reassembled, which is convenient for the maintenance, calibration or replacement of the temperature measuring device; and by uniformly applying clamping force, it avoids the sealing failure or glass seal breakage caused by local stress concentration, thereby improving the long-term reliability and safety of the system. It plays a key role in ensuring the sealing stability, mechanical robustness and ease of operation of the entire temperature measuring device under harsh process environments.

[0052] In some embodiments, the length of the reducing pipe 32 is 20mm to 50mm, for example, it can be 20mm, 30mm, 40mm or 50mm.

[0053] In some embodiments, the length of the reducer 32 is preferably 30 mm.

[0054] Specifically, if the length of the reducer 32 is less than 20mm, the taper or step transition will be too steep, which may lead to local stress concentration and affect the sealing reliability under thermal cycling or mechanical vibration. At the same time, an excessively short reducer section is not conducive to the layout of internal leads and the control of bending radius, increasing the risk of signal line wear or short circuit. If the length of the reducer 32 exceeds 50mm, although a smoother transition can be achieved, it will unnecessarily increase the overall size of the device, which may cause spatial interference with the surrounding equipment of the chamber, reduce installation flexibility, increase material costs and heat capacity, and affect the temperature response speed.

[0055] Therefore, limiting the length of the reducing tube 32 to the range of 20mm to 50mm ensures structural strength, lead wire routing space, and sealing stability while also considering compactness, process compatibility, and thermomechanical reliability, making it suitable for space-constrained PECVD chamber environments. This design embodies a comprehensive balance between miniaturization and functional integration of vacuum devices.

[0056] In some embodiments, the inner wall roughness of the reducing pipe 32 is 0.1μm to 0.8μm, for example, it can be 0.1μm, 0.2μm, 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm or 0.8μm.

[0057] This roughness range is the result of optimization specifically for the high vacuum process environment of PECVD. The smoother the inner wall surface of the reducer 32, the fewer water molecules, residual gases, or process byproducts are adsorbed, the lower the gas release rate, and the more beneficial it is to maintaining chamber cleanliness and vacuum stability.

[0058] If the roughness exceeds 0.8μm, the number of microscopic peaks and valleys on the surface increases, the specific surface area increases, and gas molecules or contaminants are easily trapped. During vacuuming or high-temperature processes, they are slowly released, leading to increased background pressure, prolonged evacuation time, and even the introduction of particulate contamination, which affects wafer yield. If the roughness is less than 0.1μm, although adsorption can be further reduced, ultra-precision polishing processes are required, which significantly increases manufacturing costs, while the marginal improvement in vacuum performance is limited, resulting in poor economic efficiency.

[0059] Therefore, the inner wall roughness is limited to 0.1μm to 0.8μm, which can be achieved, especially with conventional stainless steel or aluminum alloy materials, through standard electrochemical polishing or mechanical finishing. This approach balances process feasibility and cost-effectiveness while ensuring low gas release and low pollution. This design effectively reduces gas retention in the vacuum environment, helps to quickly establish and stabilize high vacuum conditions, and provides a clean and stable internal channel for the reliable operation of multi-point temperature measurement devices.

[0060] In some embodiments, the diameter of the ferrule 21 is 0.3mm to 1mm, for example, it can be 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm or 1mm.

[0061] In some embodiments, the diameter of the ferrule 21 is preferably 0.5 mm.

[0062] This size range takes into account factors such as temperature response speed, mechanical strength, space layout constraints, and signal stability. If the thermocouple wire diameter is less than 0.3 mm, although it has a small heat capacity and fast response, its mechanical strength is significantly reduced. It is prone to bending, breakage, or vibration displacement in the high temperature of the PECVD chamber (usually 200°C~450°C), airflow disturbance, or during installation, leading to temperature point drift or even failure. At the same time, the resistance of the excessively thin wire increases, which may introduce additional noise and affect the acquisition accuracy of weak thermoelectric potential signals. If the thermocouple wire diameter is greater than 1 mm, although it has excellent structural strength, its thermal inertia increases, the response speed slows down, and it is difficult to reflect the rapid temperature dynamics in the chamber in real time. In addition, excessively thick thermocouple wires will occupy more space in the chamber and are prone to interference with heating plates, gas spray heads, or other structures when densely arranged for multi-point temperature measurement, affecting device integration.

[0063] Therefore, limiting the diameter of the 21-wire hybrid wire to the range of 0.3mm to 1mm ensures sufficient mechanical rigidity and long-term reliability while maintaining good thermal response characteristics and compact layout capabilities. This is particularly suitable for process environments like PECVD chambers, which have stringent requirements for space, cleanliness, and temperature measurement stability. This design balances performance, reliability, and engineering practicality, ensuring the accuracy and repeatability of multi-point in-situ temperature measurement.

[0064] In some embodiments, the length of the coupling wire 21 extending into the cavity from where it exits the mounting flange 1 is 15mm to 30mm, for example, it can be 15mm, 25mm, 25mm or 30mm.

[0065] This length range is precisely designed to ensure that the thermocouple end 22 accurately corresponds to a specific temperature measurement point within the chamber after installation, thereby enabling in-situ, fixed-point temperature acquisition of critical areas.

[0066] It should be noted that the length of the ferrule 21 extending into the cavity from where it exits the mounting flange 1 can be determined based on the actual temperature measurement point.

[0067] Specifically, refer to Figures 2 to 3 When the temperature detection device 10 is in operation, the thermocouple wire 21 extends into the chamber through the thermocouple inlet hole 5 to measure the temperature. By controlling the extension length of the thermocouple wire 21 and combining it with its preset layout on the mounting flange 1, the ends 22 of each thermocouple can be aligned with the following typical temperature measurement positions: Central temperature measuring point A: Located at the geometric center and surrounding area of ​​the spray plate, used to monitor the temperature uniformity of the core area of ​​the reaction gas distribution.

[0068] Edge temperature measurement point B: Set within 40mm~60mm of the vacuum pump port (compatible with 12-inch standard chamber), covering the edge of the wafer carrier area and the periphery of the heating plate, reflecting the thermal field characteristics of the process edge.

[0069] Process kit temperature measurement point C: Arranged near functional ceramic components in different locations within the chamber, such as the top liner and around the exhaust port of the suction ring, to monitor the thermal state of the non-metallic process kit.

[0070] Valve interface temperature measurement point D: Located in the valve interface area connecting the process chamber and the transmission chamber, to evaluate the temperature gradient and thermal stability at the chamber interface.

[0071] Through the coordinated design of limiting the length of the 21-wire and spatial positioning, this scheme achieves repeatable and precise deployment of multiple temperature measurement locations, providing a reliable data foundation for temperature field modeling, uniformity control, and equipment health monitoring in the PECVD process.

[0072] In some embodiments of this disclosure, the response time of thermocouple 2 is no more than 1 second, the temperature measurement range is 0℃~400℃, and the temperature measurement accuracy reaches ±0.5℃, which can fully meet the comprehensive requirements of PECVD process for real-time temperature, range coverage and measurement accuracy.

[0073] In some embodiments, a sealing ring is installed between the mounting flange 1 and the chamber wall around the viewing port of the chamber.

[0074] In some embodiments, the sealing ring may be a fluororubber O-ring or a metal gasket.

[0075] The sealing ring is typically embedded in an annular sealing groove on the mating end face of the mounting flange 1 or on the cavity wall. When the mounting flange 1 is pressed to the viewing window port by bolts, clamps, or other fastening methods, the sealing ring is deformed under pressure, filling the microscopic gap between the flange and the cavity, thereby forming a high-vacuum sealing interface between the two.

[0076] This design ensures that the temperature measuring device can maintain the high vacuum environment required by the PECVD chamber after connection, preventing pressure fluctuations or contamination caused by leakage during the process; avoiding unreliable sealing or surface damage caused by direct metal-to-metal hard contact, improving sealing consistency and service life during repeated disassembly and assembly; adopting a standard sealing structure, it is compatible with existing chamber interface specifications, requiring no modification to the equipment body, reducing integration difficulty and cost.

[0077] In summary, the installation of this sealing ring is a key measure to ensure the vacuum compatibility, process safety, and operational reliability of the entire temperature measuring device.

[0078] In some embodiments, the data acquisition module 42 is a multi-channel temperature recorder.

[0079] Specifically, the multi-channel temperature recorder is used to receive and process temperature signals from each thermocouple 2.

[0080] In some embodiments, the sampling frequency of the multi-channel temperature recorder is 1Hz, that is, it collects data from all temperature measurement channels once per second to capture the steady-state distribution and slow dynamic changes of the temperature field inside the PECVD chamber, so as to meet the monitoring needs of the preheating stage or steady-state deposition process.

[0081] This multi-channel temperature logger supports USB interface data export, facilitating the rapid transmission of temperature measurement data to a host computer for analysis, archiving, or integration with the process control system. It also features real-time display, simultaneously presenting the temperature values ​​at each measurement point and the temperature distribution curve over time on a local screen, intuitively reflecting the thermal uniformity within the chamber. Furthermore, it has built-in storage capacity of at least 100,000 data sets, supporting the review of historical chamber temperature records before different batches of processes and exporting complete temperature distribution curves. By identifying and avoiding potential temperature anomalies before process startup, it helps reduce the defect rate of PECVD films from approximately 8% to below 2%, resulting in a corresponding improvement in process stability of approximately 75%.

[0082] This disclosure achieves precise positioning of multiple thermocouple wires at key temperature measurement points within the chamber by extending them through mounting flanges. A high-vacuum compatible signal output channel is constructed using an interface adapter assembly. This assembly comprises a first flange, a reducer, and a second flange, all sequentially sealed together. The first flange matches the mounting flange to accommodate the chamber's small-diameter viewing window, the reducer provides a smooth transition from a small diameter to a large diameter, and the second flange provides ample installation space and wiring redundancy for the vacuum connector. Multiple thermocouple signal leads are connected to the vacuum connector via this sealed channel, ultimately linking to a multi-channel temperature recorder for synchronous, in-situ, and high-precision monitoring of the chamber's temperature field. This design allows for multi-point temperature acquisition under real-world process conditions without modifying the chamber itself. It not only directly reflects thermal uniformity and supports process traceability and control system integration, but also proactively mitigates temperature anomalies, reduces film defect rates, and significantly improves process stability, equipment uptime, and system reliability.

[0083] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A temperature detection device for a PECVD chamber, characterized in that, include: Mounting flange for sealing the viewing port installed into the chamber; An interface adapter component, one end of which is sealed to the mounting flange; A signal transmission component includes a vacuum connector and a data acquisition module, wherein the vacuum connector is hermetically mounted on the other end of the interface adapter component; Multiple thermocouples are provided, with their wires passing through the mounting flange and extending into the cavity. The ends of the wires correspond to multiple temperature measuring points within the cavity in a preset fixed spatial relationship. The signal leads of the multiple thermocouples extend out from the mounting flange, pass through the channel inside the interface adapter assembly, and connect to a terminal at one end of the vacuum connector. The other end of the vacuum connector is connected to the data acquisition module.

2. The temperature detection device according to claim 1, characterized in that, The interface adapter component includes components for use with a first flange, a reducing pipe, and a second flange; The first flange is sealed to the mounting flange, the first flange is connected to the second flange through the reducing pipe, and the vacuum connector is sealed to the second flange.

3. The temperature detection device according to claim 2, characterized in that, The first flange is provided with an annular groove for installing a sealing ring.

4. The temperature detection device according to claim 2, characterized in that, The interface adapter component also includes a locking mechanism for securing the second flange and the vacuum connector.

5. The temperature detection device according to claim 2, characterized in that, The length of the reducing pipe is 20mm~50mm.

6. The temperature detection device according to claim 2, characterized in that, The inner wall roughness of the reducing pipe is 0.1μm~0.8μm.

7. The temperature detection device according to claim 1, characterized in that, The diameter of the hybrid wire is 0.3mm to 1mm.

8. The temperature detection device according to claim 1, characterized in that, The length of the coupling wire extending from where it exits the mounting flange into the cavity is 15mm to 30mm.

9. The temperature detection device according to claim 1, characterized in that, A sealing ring is installed between the mounting flange and the chamber wall around the viewing window port of the chamber.

10. The temperature detection device according to claim 1, characterized in that, The data acquisition module is a multi-channel temperature recorder.

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