High temperature trr automatic measuring instrument for high frequency power diode

Abstract

The utility model discloses a kind of high-frequency power diode (high-frequency high-voltage silicon stack) high-temperature trr automatic measuring instrument, it is related to high-frequency power diode testing equipment field, solve the problem that only normal temperature trr index can be provided in prior art.The measuring instrument includes trr tester, program-controlled high-temperature box and automatic recorder;Program-controlled high-temperature box provides controllable high-temperature environment, temperature reaches standard and triggers trr tester to collect trr parameter, and automatic recorder synchronously stores temperature and trr data.The utility model can realize the automatic measurement of trr parameter under high-temperature environment, adapt to the new product research and development and whole machine application demand of high-frequency power diode (high-frequency high-voltage silicon stack), improve test efficiency and data accuracy, with stronger practicality.

Description

Technical Field

[0001] This utility model relates to the technical field of high-frequency power diode testing equipment, and in particular to a high-temperature automatic TRR measuring instrument for high-frequency power diodes (high-frequency high-voltage silicon stacks). It is applicable to new product development, device and complete machine application scenarios of high-frequency power diodes (high-frequency high-voltage silicon stacks) to realize the automatic measurement and recording of reverse recovery time (TRR) parameters under high-temperature environment. Background Technology

[0002] In the research and application of high-frequency power diodes (high-frequency high-voltage silicon stacks), reverse recovery time (trr) is a key technical indicator for measuring device performance, directly affecting the device's stability and reliability under high-frequency and high-voltage conditions. However, currently, the industry typically only provides trr parameters under normal temperature conditions, lacking measurement methods for trr parameters in high-temperature environments.

[0003] In practical applications, high-frequency power diodes (high-frequency high-voltage silicon stacks) often operate under high-temperature conditions (such as the localized high-temperature environment during the operation of complete equipment). The room-temperature Trr index cannot accurately reflect the device's performance under actual operating conditions, making it difficult to verify the high-temperature reliability of devices during the new product development stage. Furthermore, there is a risk of failure due to substandard high-temperature performance during complete equipment application. While existing technologies possess independent Trr testers and high-temperature equipment, the two lack coordinated design, making it impossible to achieve automatic measurement and data recording of Trr parameters under high-temperature environments. This fails to meet the actual needs of high-frequency power diode (high-frequency high-voltage silicon stack) research and application. Utility Model Content

[0004] The purpose of this invention is to overcome the shortcomings of existing technologies that can only provide room temperature TRR indicators for high-frequency power diodes (high-frequency high-voltage silicon stacks) and lack automatic measurement methods for TRR parameters under high-temperature environments. This invention provides a high-temperature TRR automatic measuring instrument that can automatically measure and record TRR parameters under high-temperature environments.

[0005] The technical solution of this utility model is as follows: A high-temperature Trr automatic measuring instrument for high-frequency power diodes (high-frequency high-voltage silicon stacks) includes a Trr testing module, a programmable high-temperature module, and an automatic recording module. These modules work together to achieve automatic measurement of high-temperature Trr parameters. The specific structure and connection relationships are as follows: TRRR test module: It adopts a dedicated TRRR tester to apply test signals to high-frequency power diodes (high-frequency high-voltage silicon stacks), collect and calculate the reverse recovery time (TRR) parameter of the device; the TRRR tester is electrically connected to the programmable high temperature module and can receive the temperature compliance signal sent by the programmable high temperature module to trigger the TRRR parameter test action; Programmable high temperature module: The programmable high temperature chamber is used to provide a controllable high temperature test environment for high frequency power diodes (high frequency high voltage silicon stacks). The programmable high temperature chamber can set the target temperature, heating rate and holding time through the program. It has real-time temperature monitoring and feedback function. When the temperature inside the chamber reaches the set test temperature and stabilizes, it sends a temperature compliance signal to the TRR test module. Automatic recording module: An automatic recorder is used, which is electrically connected to the trr test module and the programmable high temperature module respectively. The automatic recorder can synchronously collect the real-time temperature data of the programmable high temperature module (such as the temperature change curve during the test) and the trr parameter data of the trr test module (such as the single test value and the average value of multiple tests), and store and output the test data in the form of documents or curves to realize the traceability of the test process.

[0006] Compared with the prior art, the beneficial effects of this utility model are as follows: Filling the gap in high-temperature Trr measurement: For the first time, through the combined design of "Trr tester + programmable high-temperature chamber + automatic recorder", the automatic measurement of Trr parameters of high-frequency power diodes (high-frequency high-voltage silicon stack) under high-temperature environment is realized, which solves the problem that the existing technology can only provide Trr index at room temperature; Adaptable to R&D and application needs: It can be used to verify the high-temperature reliability of devices during the new product R&D stage, and can also be used for device performance screening before the application of the whole machine, providing data support for the full life cycle performance evaluation of high-frequency power diodes (high-frequency high-voltage silicon stacks); Improve testing efficiency and accuracy: No manual intervention is required for temperature control and data recording, avoiding temperature deviations and data errors caused by manual operation. At the same time, the automatic recorder can simultaneously store temperature and trr data for easy subsequent analysis. Easy to operate: The entire testing process can be completed through program settings, reducing the technical threshold for operators and making it suitable for laboratory and production line scenarios. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of the module connection of this utility model.

[0008] Figure 2 : This is a schematic diagram of the structure of this utility model.

[0009] The meanings of the labels in the attached diagram are as follows: 1-TRR tester; 2-Programmable high temperature chamber; 3-Automatic recorder; 4-High temperature test cable; 5-Component fixture; 6-Temperature signal cable; 7-Data transmission cable. Detailed Implementation

[0010] The following is in conjunction with the appendix Figure 1-2 The specific embodiments of this utility model will be described in detail so that those skilled in the art can implement them smoothly.

[0011] (1) Component selection and installation TRRR test module: A dedicated TRRR tester 1 that meets the testing requirements of high-frequency power diodes is selected. The test frequency range is adapted to the characteristics of high-frequency devices (e.g., 1MHz~100MHz), and the test accuracy meets industry standards (e.g., TRRR measurement error ≤±5%). The signal output terminal of the TRRR tester is connected to the device fixture in the programmable high-temperature chamber through a high-temperature resistant test cable, and the signal input terminal is connected to the temperature signal output terminal of the programmable high-temperature chamber to receive the temperature compliance signal. Programmable high-temperature module: Programmable high-temperature chamber 2 is selected, with a temperature control range covering the typical high-temperature operating range of high-frequency power diodes (e.g., room temperature +20℃~300℃), temperature control accuracy ≤±1℃, and the heating rate can be set (e.g., 1℃ / min~10℃ / min); a special device fixture is installed inside the high-temperature chamber to fix the high-frequency power diode (high-frequency high-voltage silicon stack), ensuring the device position is stable during the test, and the fixture material is made of high-temperature resistant insulating material (e.g., ceramic) to avoid interference with the test signal; Automatic recording module: Select an automatic recorder 3 with multi-channel data acquisition function, data acquisition frequency ≥1Hz, and support synchronous acquisition of temperature data (unit: ℃) and trr parameter data (unit: ns); the automatic recorder is connected to the data output terminal of the trr tester and the temperature data output terminal of the programmable high temperature chamber through data cables, and can store at least 1000 sets of test data, and supports data export (such as Excel format documents) via USB or Ethernet interface.

[0012] (2) Work process Preparation stage: Fix the high-frequency power diode (high-frequency high-voltage silicon stack) to be tested on the device fixture 5 inside the programmable high-temperature chamber and close the high-temperature chamber door; set the TRr test parameters (such as test voltage and current) through the operation interface of the TRr tester, set the high-temperature test conditions (such as target temperature 150℃, heating rate 5℃ / min, holding time 10min) through the operation interface of the programmable high-temperature chamber, and set the data acquisition interval (such as 1s / time) through the automatic recorder. Heating and triggering test: Start the programmable high temperature chamber. The equipment heats up according to the set heating rate. When the temperature inside the chamber reaches 150℃ and is kept stable for 5 minutes, the programmable high temperature chamber sends a temperature compliance signal to the TRR tester. After receiving the signal, the TRR tester automatically starts the TRR parameter test, applies test signals to the device and collects TRR data. Data recording: During the TRRR test, the automatic recorder synchronously collects the real-time temperature of the programmable high-temperature chamber (to ensure temperature stability during the test) and the TRRR test data of the TRRR tester, recording one set of data every 1 second; after a single test is completed, the TRRR tester outputs the TRRR test results for this test, and the automatic recorder stores the temperature curve and TRRR data for this test; Test completion: If multiple tests are required, the above heating-testing-recording process can be automatically repeated through program settings; after all tests are completed, the test data document can be exported through the automatic recorder for subsequent analysis.

Claims

1. An automatic high-temperature Trr measuring instrument for high-frequency power diodes, characterized in that, The device includes a TRRR testing module, a programmable high-temperature module, and an automatic recording module. The TRRR testing module is a TRRR tester used to collect TRRR parameters of high-frequency power diodes. The programmable high-temperature module is a programmable high-temperature chamber used to provide a high-temperature testing environment. The programmable high-temperature chamber is electrically connected to the TRRR tester and can send a temperature compliance signal to the TRRR tester to trigger TRRR parameter testing. The automatic recording module is an automatic recorder electrically connected to both the TRRR tester and the programmable high-temperature chamber, used to synchronously collect and store the temperature data of the programmable high-temperature chamber and the TRRR parameter data of the TRRR tester.

2. The high-temperature trr automatic measuring instrument for high-frequency power diodes according to claim 1, characterized in that, The temperature control range of the programmable high-temperature chamber is room temperature +20℃ to 300℃, and the temperature control accuracy is ≤±1℃.

3. The high-temperature trr automatic measuring instrument for high-frequency power diodes according to claim 1, characterized in that, The test frequency range of the trr tester is 1MHz~100MHz, and the trr measurement error is ≤±5%.

4. The high-temperature trr automatic measuring instrument for high-frequency power diodes according to claim 1, characterized in that, The automatic recorder has a data acquisition frequency of ≥1Hz and supports data export via USB or Ethernet interface.

5. The high-temperature trr automatic measuring instrument for high-frequency power diodes according to claim 1, characterized in that, The programmable high-temperature chamber is equipped with device clamps made of high-temperature resistant insulating material for fixing high-frequency power diodes.

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