A nano water ion generator

Abstract

The utility model discloses a kind of nano water ion generators, including substrate, semiconductor refrigeration component and discharge electrode, the semiconductor refrigeration component is fixed in the substrate, the refrigeration end of the semiconductor refrigeration component is connected with condensing column, the discharge electrode is set above the condensing column, high voltage electric field for ionizing water is generated between the discharge electrode and the condensing column, condensing column is provided with water suction baffle around, the water suction baffle is equipped with through-hole, the condensing column is arranged in the through-hole and top is from the through-hole, the condensing column and the hole wall of the through-hole are left gap. The utility model condenses water on condensing column by absorption, and ensure that the air humidity around condensing column is humid, so that nano water ion generator long time stable operation.

Description

Technical Field

[0001] This utility model relates to a water ion generator. Background Technology

[0002] The nano-water particles generated by nano-water ions can inhibit bacterial growth and remove odors; moisturize hair, making it smooth and shiny; and have antiviral and antibacterial properties, as well as various medical applications. The water ion generator utilizes the Peltier effect, using a condenser column to condense and extract water from the air, and then generates nano-water ions through high-voltage discharge. The water originates from the air and condenses on the condenser column after reaching its dew point.

[0003] Current nano-water ion generators rely on the cooling effect of a thermoelectric cooler to transfer heat to a condenser column. Water vapor in the air cools and reaches its dew point, forming condensate. This condensate is then ionized into water ions under high pressure. In an environment where the amount of nano-water ions released by the generator is fixed, the amount of water ionized by the high-voltage discharge is also fixed, and therefore the amount of condensate consumed from the condenser column is also fixed. When there is too much water on the condenser column, it will flow along the column and onto the thermoelectric cooler, potentially causing a short circuit and halting or even burning out the nano-water ion generator. When condensate drips from the condenser column, the discharge electrode spacing changes, increasing the discharge distance. This causes the nano-water ion generator to enter a non-functional state, requiring re-condensation before it can resume operation and release nano-water ions. Utility Model Content

[0004] To address the shortcomings of the existing technology, this invention provides a nano-water ion generator that solves the problem of condensate accumulation in the condensation column affecting the long-term stable operation of the nano-water ion generator.

[0005] The technical solution of this utility model is as follows: A nano water ion generator includes a substrate, a semiconductor refrigeration component, and a discharge electrode. The semiconductor refrigeration component is fixed on the substrate, and a condensation column is connected to the refrigeration end of the semiconductor refrigeration component. The discharge electrode is disposed above the condensation column, and a high-voltage electric field for ionizing water is generated between the discharge electrode and the condensation column. A water-absorbing baffle is provided around the condensation column, and the water-absorbing baffle has a through hole. The condensation column passes through the through hole and its top protrudes from the through hole. A gap is left between the condensation column and the hole wall of the through hole.

[0006] Furthermore, the condensation column is surrounded by a water-holding layer, with a gap between the water-holding layer and the wall of the through hole. The water-holding layer allows for a more uniform distribution of condensate around the condensation column, which is beneficial for the continuous ionization and generation of water ions.

[0007] Furthermore, the substrate is provided with an insulating support, the insulating support having mounting holes, and the semiconductor cooling component is disposed within the mounting holes, which are sealed with potting compound. The potting compound seal prevents moisture from contacting the semiconductor cooling component, improving safety.

[0008] Furthermore, the condenser column includes a base and a column body. The base is connected to the cooling end of the semiconductor refrigeration component, and the base is encapsulated with potting compound. Encapsulating the base with potting compound makes the condenser column more securely fixed and extends its service life.

[0009] Furthermore, the insulating support is provided with multiple pillars, and the discharge electrode is fixedly mounted on the pillars. The insulating support stabilizes the position of the discharge electrode, ensuring the stability of the high-voltage electric field.

[0010] Furthermore, the substrate is an aluminum-based circuit board, and the semiconductor cooling component is mounted on the aluminum-based circuit board using an surface mount technology (SMT) process. Using an aluminum-based circuit board and mounting the semiconductor cooling component via SMT improves heat dissipation.

[0011] Compared with the prior art, the advantages of the technical solution provided by this utility model are as follows: This invention uses a water-absorbing baffle to absorb excess condensate from the condensation column and ensures that the air around the condensation column is humid. This allows the nano water ion generator to operate for a longer period of time without being affected by the amount of condensate, releasing more nano water ions to achieve better antibacterial, deodorizing, and air-purifying effects. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the nano-water ion generator in Example 1.

[0013] Figure 2 This is a cross-sectional schematic diagram of the nano-water ion generator of Example 1.

[0014] Figure 3 This is a schematic diagram of the insulating support structure of the nano-water ion generator in Example 1.

[0015] Figure 4 This is a schematic diagram of the condenser column structure of the nano water ion generator in Example 1.

[0016] Figure 5 This is a schematic diagram of the nano-water ion generator in Example 2.

[0017] Figure 6 This is a cross-sectional schematic diagram of the nano-water ion generator in Example 2.

[0018] Figure 7This is a schematic diagram of the condenser column and water-holding layer structure of the nano-water ion generator in Example 2. Detailed Implementation

[0019] The present invention will be further described below with reference to the embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. After reading this description, any modifications of the present invention in various equivalent forms by those skilled in the art will fall within the scope defined by the appended claims.

[0020] Example 1, please refer to Figures 1 to 4 As shown, the nano water ion generator of this embodiment includes a substrate 1, a semiconductor cooling component 2 and a discharge electrode 3. The semiconductor cooling component 2 is fixed on the substrate 1, and the circuit on the substrate 1 supplies power to the semiconductor cooling component 2 for cooling. The cooling end of the semiconductor cooling component 2 is connected to a condensation column 4, which condenses water vapor in the surrounding environment. A high-voltage electric field for ionizing water is generated between the discharge electrode 3 and the condensation column 4, thereby ionizing the condensed water to form nano water ions.

[0021] Specifically, in this embodiment, the substrate 1 is an aluminum-based circuit board. An insulating support 5 is connected to the aluminum-based circuit board. The insulating support 5 provides a mounting space for the semiconductor cooling component 2 that is isolated from its surroundings, and also provides support for the discharge electrode 3. A mounting hole 501 is provided on the insulating support 5 corresponding to the mounting position of the semiconductor cooling component 2. The semiconductor cooling component 2 is mounted on the aluminum-based circuit board to form an electrical connection using SMT technology. The semiconductor cooling component 2 is also located within the mounting hole 501 of the insulating support 5, with the cooling end of the semiconductor cooling component 2 facing upwards.

[0022] A condenser column 4 is also mounted on the cooling end of the semiconductor cooling assembly 2 using an SMT process. The condenser column 4 is a conductive and heat-conducting component, comprising an integrally formed chassis 401 and a column 402. The chassis 401 is connected to the cooling end of the semiconductor cooling assembly 2. The connected chassis 401 is also located within the mounting hole 501 of the insulating bracket 5, and most of the column 402 of the condenser column 4 extends upward from the top of the mounting hole 501. The column 402 of the condenser column 4 is not limited to the shape shown in the figure; it can also be needle-shaped, a hollow cylinder, or a column with a rounded top, etc.

[0023] The mounting hole 501 is filled with potting compound, which completely encapsulates the base 401 of the condenser column 4 and the semiconductor cooling component 2, making the connection between the condenser column 4 and the semiconductor cooling component 2 more stable, and also preventing condensate from coming into contact with the semiconductor cooling component 2.

[0024] Around the mounting hole 501, four support columns 502 are provided on the insulating bracket 5. The discharge electrode 3 is a flat plate structure with a central through hole 301. The discharge electrode 3 is fixed to the top of the support column 502 and supported by the support column 502 and located above the condensing column 4. At the same time, the position of the central through hole 301 is opposite to the condensing column 4.

[0025] Due to the continuous cooling of the semiconductor refrigeration component 2, the condensate formed on the condensation column 4 cannot be completely ionized in time. The gradual accumulation of condensate leads to dripping, causing water accumulation inside the product. Furthermore, since water ions are high-voltage ionized water, when the water drips, the discharge gap may increase, potentially preventing the generation of nano-water ions. Therefore, this invention also includes a water-absorbing baffle 6 around the condenser. The water-absorbing baffle 6 is made of a non-conductive absorbent material. The water-absorbing baffle 6 is fixed to the top of the mounting hole 501 of the insulating bracket 5. Alternatively, other fixing methods can be used. The water-absorbing baffle 6 has a through hole 601, through which the condensation column 4 passes, with its top protruding from the through hole 601. A gap is left between the condensation column 4 and the wall of the through hole 601. When there is excessive condensation on the condensation column 4, the water will accumulate into droplets. If the outer diameter of these droplets is larger than the aperture of the through hole 601 of the water absorption baffle 6, the accumulated water will be absorbed by the water absorption baffle 6, preventing the formation of larger droplets that will flow or drip, thus avoiding malfunction of the nano-water ion generator. Additionally, the water absorbed by the water absorption baffle 6 will evaporate, maintaining a certain level of humidity in the air surrounding the condensation column 4. It should be noted that multiple condensation columns 4 can be provided, corresponding to multiple semiconductor cooling components 2. Each condensation column 4 is surrounded by a water absorption baffle 6. The through hole 601 of the water absorption baffle 6 can be circular, triangular, quadrilateral, or other polygonal shapes.

[0026] Example 2, please refer to Figures 5 to 7 As shown, the difference between this embodiment and Embodiment 1 is that, in addition to the water-absorbing baffle 6 around the condensing column 4, a water-holding layer 7 is also wrapped around the periphery of the column body 402 of the condensing column 4. The head end of the column body 402 of the condensing column 4 protrudes from the top of the water-holding layer 7, ensuring that a high-voltage electric field can be formed between it and the discharge electrode 3 to ionize the condensed water. A gap is left between the water-holding layer 7 and the hole wall of the through hole 601 of the water-absorbing baffle 6. The purpose of adding the water-holding layer 7 in this embodiment is to uniformly collect the condensed water on the condensing column 4. When the water-holding layer 7 is saturated, water droplets can be stably formed at the top of the column body 402 of the condensing column 4, ensuring the stability of ionization. At the same time, more water on the condensing column 4 can be used for high-voltage ionization. If the condensed water further accumulates and cannot be ionized, it drips onto the surface of the water-holding layer 7 and is absorbed by the water-absorbing baffle 6, allowing it to continue working.

Claims

1. A nano-water ion generator, comprising a substrate, a semiconductor refrigeration component, and a discharge electrode, wherein the semiconductor refrigeration component is fixed to the substrate, a condensation column is connected to the refrigeration end of the semiconductor refrigeration component, the discharge electrode is disposed above the condensation column, and a high-voltage electric field for ionizing water is generated between the discharge electrode and the condensation column, characterized in that, A water-absorbing baffle is provided around the condensation column, and the water-absorbing baffle has a through hole. The condensation column passes through the through hole and its top protrudes out of the through hole. A gap is left between the condensation column and the wall of the through hole.

2. The nano-water ion generator according to claim 1, characterized in that, The condensation column is surrounded by a water-holding layer, and there is a gap between the water-holding layer and the wall of the through hole.

3. The nano-water ion generator according to claim 1 or 2, characterized in that, An insulating support is provided on the substrate, and the insulating support has a mounting hole. The semiconductor cooling component is disposed in the mounting hole, and the mounting hole is sealed with potting compound.

4. The nano-water ion generator according to claim 3, characterized in that, The condenser column includes a chassis and a column body. The chassis is connected to the cooling end of the semiconductor refrigeration component, and the potting compound wraps around the chassis.

5. The nano-water ion generator according to claim 3, characterized in that, The insulating support has multiple pillars, and the discharge electrode is fixedly installed on the pillars.

6. The nano-water ion generator according to claim 1, characterized in that, The substrate is an aluminum-based circuit board, and the semiconductor cooling component is mounted on the aluminum-based circuit board using an SMT process.

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