A switch module with temperature monitoring and controllable current direction

Abstract

The utility model provides a kind of switch module with temperature monitoring and current direction controllable, the module is formed by switch circuit package;The switch circuit includes NTC resistance, protection circuit, upper bridge arm circuit and lower bridge arm circuit;NTC resistance is arranged in parallel with protection circuit, both ends of NTC resistance, upper bridge arm circuit, lower bridge arm circuit are connected with external control module;Upper bridge arm circuit is connected with lower bridge arm circuit, and upper bridge arm circuit, lower bridge arm circuit are connected with protection circuit;Through the switch module with temperature monitoring and current direction controllable of the utility model, the structure setting of module can be optimized, temperature monitoring is realized, and the controllable setting of current direction in module can also be realized;Expand the application range of module, enhance the overall structural stability and operating reliability of module.

Description

Technical Field

[0001] This utility model relates to the field of energy storage technology in new energy power systems, and more specifically, to a switch module with temperature monitoring and controllable current direction. Background Technology

[0002] The core performance indicators of energy storage systems, such as efficiency, reliability, and safety, are crucial for their safe operation and successful commercial deployment. Dynamically reconfigurable battery energy storage technology within digital energy storage systems is widely recognized.

[0003] Dynamically reconfigurable battery energy storage technology discretizes and digitizes the energy flow of battery packs, upgrading the traditional physical hard connection between packs to a dynamically reconfigurable connection controlled by intelligent programs. This achieves a transformation from analog battery energy storage to digital battery energy storage. This transformation fundamentally overcomes key industry challenges such as safety and economy caused by the bottleneck effect of battery systems and achieves seamless integration with the information internet. As a disruptive force in the energy internet, dynamically reconfigurable digital energy storage has profound transformative potential for the future development of the energy storage field.

[0004] Therefore, in digital energy storage systems based on dynamic reconfigurable technology, an intelligent connection device deployed between battery packs is needed. The core function of this device is to achieve dynamic reconfigurable connections. However, existing connection devices are structurally complex and cannot simultaneously monitor temperature and control the current direction. Therefore, researching how to optimize the device's structure to enable precise control of current direction, management of circuit on / off states, and ensure the safe and stable operation of the battery packs and the entire system is of great significance.

[0005] Patent CN118366951A discloses a parallel bidirectional switching power module, including a plastic package with a frame inside. Pins on both sides of the frame extend beyond the edges of the plastic package. The frame includes a pair of base islands, an external connection platform, and a pair of gate platforms. The bottom of each base island is on the same plane as the bottom of the plastic package, or the bottom of the base island is 0.01mm to 1.00mm higher than the bottom of the plastic package. The pair of gate platforms are located on the left and right sides of the pair of base islands, and the external connection platform is located behind the pair of base islands. At least two power chips are connected to each base island. Adjacent power chips on the pair of base islands are connected via power connection parts to form power groups. At least two power groups are connected sequentially, with the rear power group connected to the external connection platform. The gates of the power chips on the pair of base islands are connected to their respective external gate platforms via gate signal connection parts. This design can reduce the size of the switching power module and improve its heat dissipation, but it cannot precisely control the current direction. Utility Model Content

[0006] In view of this, the present invention aims to propose a switch module with temperature monitoring and controllable current direction, in order to solve the problem that the connection device in the prior art is relatively complex in structure and cannot achieve temperature monitoring and controllable current direction at the same time. This invention optimizes the module's structural design, enabling temperature monitoring and controllable current direction within the module; expands the module's applicability, and enhances the overall structural stability and operational reliability of the module.

[0007] To achieve the above objectives, the technical solution of this utility model is implemented as follows:

[0008] This utility model relates to a switch module with temperature monitoring and controllable current direction. The module is formed by encapsulating a switch circuit. The switch circuit includes an NTC resistor, a protection circuit, an upper bridge arm circuit, and a lower bridge arm circuit. The NTC resistor and the protection circuit are arranged in parallel. Both ends of the NTC resistor, the upper bridge arm circuit, and the lower bridge arm circuit are connected to an external control module. The upper bridge arm circuit is connected to the lower bridge arm circuit, and both the upper bridge arm circuit and the lower bridge arm circuit are connected to the protection circuit.

[0009] Furthermore, an NTC resistor is set, and its two pins, NTC1 and NTC2, are connected to an external control module.

[0010] Furthermore, the protection circuit includes electrical lead J1, electrical lead J2, and electrical lead S; electrical lead J1 is connected to one end of the upper bridge arm circuit, electrical lead J2 is connected to one end of the lower bridge arm circuit, and electrical lead S is connected to the other end of the upper bridge arm circuit and the lower bridge arm circuit, respectively.

[0011] Furthermore, the protection circuit also includes a TVS device; the TVS device is connected to electrical lead-in J1, electrical lead-in J2 and electrical lead-in S respectively.

[0012] Furthermore, at least one TVS device should be provided.

[0013] Furthermore, three TVS devices are provided; the three TVS devices are respectively located between electrical lead-1 J1 and electrical lead-2 J2, between electrical lead-2 J2 and electrical lead-3 S, and between electrical lead-1 J1 and electrical lead-3 S.

[0014] Furthermore, the TVS device is a transient voltage suppressor diode.

[0015] Furthermore, both the upper bridge arm circuit and the lower bridge arm circuit include at least n switching units, where n is a positive integer and n≥1.

[0016] Furthermore, one end of the n switch units connected in parallel is connected to electrical lead-in J1 or electrical lead-in J2, and the other end of the n switch units connected in parallel is connected to electrical lead-in S.

[0017] Furthermore, the switching unit includes a power semiconductor device Q and a diode D; the source of the power semiconductor device Q is connected to the electrical three-pin S and the positive terminal of the diode D, respectively; the drain of the power semiconductor device Q is connected to the electrical one-pin J1 or the electrical two-pin J2 and the negative terminal of the diode D, respectively.

[0018] Compared with the prior art, the switch module with temperature monitoring and controllable current direction described in this utility model has the following advantages:

[0019] By configuring this module, its structural design can be optimized, enabling both temperature monitoring and controllable current direction control within the module. This expands the module's applicability and enhances its overall structural stability and operational reliability. Furthermore, by controlling the on / off state of internal semiconductor devices to regulate current flow, the number of internal semiconductor devices and diodes can be adjusted according to the power requirements of the application scenario. Additionally, the inclusion of a TVS (Transient Voltage Suppressor) device within the module further reduces its failure rate. Attached Figure Description

[0020] The accompanying drawings, which constitute a part of this utility model, are used to provide a further understanding of the utility model. The illustrative embodiments and descriptions of the utility model are used to explain the utility model and do not constitute an undue limitation of the utility model. In the drawings:

[0021] Figure 1 This is a schematic diagram of the switching module circuit.

[0022] Figure 2 This is a schematic diagram of the current flow direction in the switching module in Example 1;

[0023] Figure 3 This is a schematic diagram of the current flow direction in the switching module in Example 2;

[0024] Figure 4 This is a schematic diagram showing the flow direction of the current J2 to J1 in the switching module in Example 3;

[0025] Figure 5 This is a schematic diagram showing the flow direction of current J1 to J2 in the switching module in Example 3. Detailed Implementation

[0026] The inventive concepts of this disclosure will be described below using terminology commonly used by those skilled in the art to convey the essence of their work to others skilled in the art. However, these inventive concepts may be embodied in many different forms and should not be construed as limited to the embodiments described herein.

[0027] It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0028] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0029] This embodiment is for a new energy power system. Similar to conventional new energy power systems, the overall structure consists of wires, batteries, and switches.

[0030] To address the issue that existing connection devices are structurally complex and fail to achieve both temperature monitoring and controllable current direction, this embodiment proposes a switch module with both temperature monitoring and controllable current direction. This module is formed by encapsulating a switch circuit. The switch circuit includes an NTC resistor, a protection circuit, an upper bridge arm circuit, and a lower bridge arm circuit. The NTC resistor and protection circuit are arranged side-by-side, and both ends of the NTC resistor, the upper bridge arm circuit, and the lower bridge arm circuit are connected to an external control module. The upper bridge arm circuit is connected to the lower bridge arm circuit, and both the upper and lower bridge arm circuits are connected to the protection circuit. One NTC resistor is used to detect temperature changes in the protection circuit within the switch module and promptly transmit the information to the external control module. The two pins of the NTC resistor, NTC1 and NTC2, are connected to the external control module. In this embodiment, encapsulating the circuit into a module allows for the definition of standard physical dimensions, mounting holes, and electrical interfaces (lead-out points), making the module easier to integrate into different systems or products and facilitating replacement and upgrades during maintenance.

[0031] By configuring the module, its structure can be optimized, enabling both temperature monitoring and controllable current direction control within the module. This expands the module's applicability and enhances its overall structural stability and operational reliability. An NTC resistor is encapsulated within the module to detect internal temperature changes. Furthermore, module encapsulation prevents mechanical damage, protecting fragile electronic components and solder joints from impacts, vibrations, pressure, scratches, drops, and other physical damage. It also prevents foreign object intrusion, blocking dust, metal debris, fibers, liquids (water, oil, chemicals), and other contaminants from entering the interior, avoiding short circuits, corrosion, or performance degradation. It also prevents the circuit board from moisture, condensation, oxidation, corrosion, and electrochemical migration. Additionally, it protects against chemical corrosion, resisting the erosion of salt spray, acid and alkali vapors, solvents, or other corrosive gases / liquids present in the environment.

[0032] The protection circuit includes electrical lead J1, electrical lead J2, and electrical lead S. Electrical lead J1 is connected to one end of the upper bridge arm circuit, electrical lead J2 is connected to one end of the lower bridge arm circuit, and electrical lead S is connected to the other end of both the upper and lower bridge arm circuits.

[0033] The configuration of electrical lead-out pin J1, electrical lead-out pin J2, and electrical lead-out pin S facilitates the connection and disconnection between the switch module and the external control module.

[0034] In addition, the protection circuit also includes TVS devices. The TVS devices are connected to electrical pin 1 (J1), electrical pin 2 (J2), and electrical pin 3 (S), respectively. At least one TVS device is provided. Preferably, three TVS devices are provided. The three TVS devices are respectively positioned between electrical pin 1 (J1) and electrical pin 2 (J2), between electrical pin 2 (J2) and electrical pin 3 (S), and between electrical pin 1 (J1) and electrical pin 3 (S). The TVS devices are transient voltage suppressor diodes. In this embodiment, the three TVS devices are designated as D7, D8, and D9.

[0035] It is important to note that the operating voltage of the circuit must not exceed the clamping voltage of the TVS. The TVS will activate when the operating voltage exceeds its clamping voltage. Furthermore, electrical lead J1 and electrical lead J2 are both leads (pins) of the switch module package. Current flows into or out of the switch module through these pins.

[0036] By coordinating the pins J1, J2, and S within the protection circuit with the TVS device, when a large current suddenly appears in the circuit, the current flow in the TVS device can either flow to the left along the direction from S to J1 and J2 to S, or to the right along the direction from J1 to S and S to J2. This improves the protection of the circuit during operation, preventing damage from transient high voltages and surge currents, and also enhances the circuit's safety.

[0037] Both the upper bridge arm circuit and the lower bridge arm circuit include at least n switching units, where n is a positive integer and n≥1. The n switching units are connected in parallel. One end of the n switching units connected in parallel is connected to either Electrical Lead-1 J1 or Electrical Lead-2 J2, and the other end of the n switching units connected in parallel is connected to Electrical Lead-3 S.

[0038] By setting up the upper and lower bridge arm circuits, the corresponding number of switching units can be set as needed, thereby improving the flexibility of the internal circuit structure of the switching module and expanding the applicability of the switching module, ensuring that it can be used in energy storage systems with different requirements, so as to achieve intelligent connection between different battery packs.

[0039] The switching unit includes a power semiconductor device Q and a diode D. The source of the power semiconductor device Q is connected to electrical pin S and the positive terminal of the diode D. The drain of the power semiconductor device Q is connected to electrical pin J1 or electrical pin J2 and the negative terminal of the diode D. The gate of the power semiconductor device Q serves as an electrical point, used to change the direction of the current inside the switching module under the application of an external voltage. Preferably, one power semiconductor device Q and one diode D are provided in the switching unit. In the switching circuit, at least two power semiconductor devices Q and two diodes D are provided. In this embodiment, the number of devices in the internal circuit of the switching module can be adjusted according to the power requirements of the application scenario.

[0040] The direction of current flow within the module can be controlled by turning the power semiconductor device Q on and off. An internally connected parallel TVS device protects the power semiconductor device Q, thereby reducing the module's failure rate. The coordinated arrangement of the power semiconductor device Q and diode D enables flexible control and switching of the current direction. By controlling the external voltage at the gate of the power semiconductor device, it can be precisely turned on or off. Combining the unidirectional conduction characteristic of the diode, this circuit can change the current path direction as needed. For example, it can switch between battery charging and discharging modes, or select and isolate different battery packs. It also prevents reverse current flow, protecting circuit components and improving the stability and safety of the circuit structure. Furthermore, it simplifies the internal circuitry, increases the module's integration, and enhances the reliability of current control within the system, enabling efficient and reliable current direction control.

[0041] Preferably, when n=3, the upper bridge arm circuit is equipped with three switching units, each comprising a power device Q1, a power device Q2, a power device Q3, a diode D1, a diode D2, and a diode D3. Power device Q1 and diode D1, power device Q2 and diode D2, and power device Q3 and diode D3 are connected in parallel to form the corresponding switching units. Specifically, the gates of power devices Q1, Q2, and Q3 are connected in parallel to form the external electrical pin G1 of the switching module. The drains of power devices Q1, Q2, and Q3, and the negative terminals of diodes D1, D2, and D3 are connected in parallel to the electrical lead J1. The sources of power devices Q1, Q2, and Q3 are connected to the positive terminals of diodes D1, D2, and D3, respectively, and the sources of all three devices are connected to electrical pin S. Specifically, the connection between the source of power device Q1 and electrical pin S forms electrical point S1 within the switching module. The connection between the source of power device Q2 and electrical pin S forms electrical point S2 within the switching module. The connection between the source of power device Q3 and electrical pin S forms electrical point S3 within the switching module.

[0042] By configuring the components within the upper bridge arm circuit, the direction of the current within the upper bridge arm circuit can be adjusted as needed, ensuring the operational stability of the upper bridge arm circuit and improving the safety of circuit use.

[0043] Preferably, when n=3, the lower bridge arm circuit is equipped with three switching units, each comprising a power quad-device Q4, a power quint-device Q5, a power six-device Q6, a diode quad-transistor D4, a diode quint-transistor D5, and a diode hexa-transistor D6. The power quad-device Q4 and diode quad-transistor D4, the power quint-device Q5 and diode quint-transistor D5, and the power six-device Q6 and diode hexa-transistor D6 are connected in parallel to form the corresponding switching units. Specifically, the gates of the power quad-device Q4, power quint-device Q5, and power six-device Q6 are connected in parallel to form the external electrical pin G2 of the switching module. The drains of the power quad-device Q4, power quint-device Q5, and power six-device Q6, and the negative terminals of the diode quad-transistor D4, diode quint-transistor D5, and diode hexa-transistor D6 are connected in parallel to the electrical pin J2. The sources of power devices Q4 (power 4), Q5 (power 5), and Q6 (power 6) are connected to the positive terminals of diodes D4 (power 4), D5 (power 5), and D6 (power 6), respectively. Furthermore, the sources of all three devices are connected to electrical pin S. Specifically, the connection between the source of power device Q4 and electrical pin S forms electrical point S1 within the switching module. The connection between the source of power device Q5 and electrical pin S forms electrical point S2 within the switching module. The connection between the source of power device Q6 and electrical pin S forms electrical point S3 within the switching module.

[0044] By configuring the components in the lower bridge arm circuit, the current direction within the module can be adjusted through the coordinated operation of the first and second switch circuits. This also ensures flexibility in adjusting the current direction within the circuit, enabling diverse current direction regulation. Furthermore, the coordination between the external electrical leads NTC1, NTC2, G1, S, G2, J1, and J2, and the internal electrical points S1, S2, and S3, facilitates controllable current direction within the module under normal conditions and allows for inspection and maintenance of the internal circuitry in abnormal situations.

[0045] A TVS diode is connected in parallel across the two ends of power devices Q1, Q2, Q3, D1, D2, and D3, and another TVS diode is connected in parallel across the two ends of power devices Q4, Q5, Q6, D4, D5, and D6. This effectively provides individual protection for different circuits within the switching module. Furthermore, the overall parallel connection of a TVS diode across all three power devices (Q1, Q2, Q3, D1, D2, D3, Q4, Q5, Q6, D4, D5, D5, and D6) provides dual protection for the entire circuit. This effectively improves the stability and reliability of the module's internal structure.

[0046] Working Principle: The upper and lower bridge arm circuits within the switching module can be controlled independently. This control is achieved by an external control module applying a DC 15V voltage to the gate and source pins of different circuits. The external control module controls the opening and closing of different circuits, thereby controlling the current flow direction within different switching units of the switching module. Specifically, by applying voltage between G1 and S and / or G2 and S, the external control module can control the on / off state of different switching units within the upper and lower bridge arm circuits, and also adjust the current path. Specifically, by applying voltage between G1 and S, current flows from J1 through Q1, Q2, and Q3 in the upper bridge arm circuit, while simultaneously, due to the unidirectional conduction characteristic of diode D, current flows into J2 through D4, D5, and D6. By applying a voltage between G2 and S, current can flow from J2 through Q4, Q5, and Q6 in the lower bridge arm circuit, while simultaneously, due to the unidirectional conduction characteristic of diode D, current can flow into J1 through D1, D2, and D3. Similarly, by applying voltages between G1 and S, and between G2 and S, current can flow from J2 into Q4, Q5, and Q6 in the lower bridge arm circuit, while simultaneously flowing into J1 through Q1, Q2, Q3, D1, D2, and D3; and from J1 into Q1, Q2, and Q3 in the upper bridge arm circuit, while simultaneously flowing into J2 through Q4, Q5, Q6, D4, D5, and D6.

[0047] As shown in Example 1-3, the power semiconductor switch is a MOSFET.

[0048] Example 1: When a DC 15V voltage is applied between G1 and S, the power semiconductor device Q in the upper bridge arm circuit is turned on, and the diode D in the lower bridge arm circuit is turned on.

[0049] Specifically, such as Figure 2 As shown, the current flows unidirectionally from J1 to J2. By applying a DC 15V voltage between G1 and S, power semiconductor devices Q1, Q2, and Q3 are simultaneously turned on. At this time, current can flow from J1 to the intermediate positions S1, S2, and S3. Since there is no voltage between G2 and S, Q4, Q5, and Q6 cannot be turned on. Furthermore, because diode D has unidirectional conduction, current can only flow unidirectionally to J2 through D4, D5, and D6.

[0050] Example 2: When a DC 15V voltage is applied between G2 and S, the power semiconductor device Q in the lower bridge arm circuit is turned on, and the diode D in the upper bridge arm circuit is turned on.

[0051] Specifically, such as Figure 3As shown, the current flows unidirectionally from J2 to J1. By applying a DC 15V voltage between G2 and S, power semiconductor devices Q4, Q5, and Q6 are simultaneously turned on. At this time, the current can flow from J2 to the intermediate positions S1, S2, and S3. Since there is no voltage between G1 and S, Q1, Q2, and Q3 cannot be turned on. Furthermore, because diode D has unidirectional conduction, the current can only flow unidirectionally to J1 through D1, D2, and D3.

[0052] Example 3: When a DC 15V voltage is applied between G1 and S, and between G2 and S, the power semiconductor device Q in both the upper and lower bridge arm circuits is turned on, and the diode D in either the upper or lower bridge arm circuit is selectively unidirectionally turned on according to the direction of the current.

[0053] Specifically, such as Figure 3 As shown, the current flows bidirectionally, J1→J2 or J2→J1. By applying a DC 15V voltage between G1 and S, and between G2 and S, power semiconductor devices Q1, Q2, Q3 and Q4, Q5, Q6 are simultaneously turned on. At this time, the current can flow freely between J1 and J2, as shown in the diagram. Figure 4 , 5 As shown. Figure 4 This is a schematic diagram showing the current flow direction from J1 to J2. Figure 5 This is a schematic diagram showing the current flow direction from J2 to J1.

[0054] In this utility model, any new energy power system may include a power module structure with controllable current direction as described in this embodiment. In addition to the TVS device and NTC resistor related structures and assembly relationships provided in this embodiment, the new energy power system also includes conventional components such as wires, batteries, and switches. Since these are all prior art, they will not be described in detail here.

[0055] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A switching module with temperature monitoring and controllable current direction, characterized in that, The module is formed by encapsulating a switching circuit; the switching circuit includes an NTC resistor, a protection circuit, an upper bridge arm circuit, and a lower bridge arm circuit; the NTC resistor and the protection circuit are arranged in parallel, and both ends of the NTC resistor, the upper bridge arm circuit, and the lower bridge arm circuit are all connected to an external control module; the upper bridge arm circuit is connected to the lower bridge arm circuit, and both the upper bridge arm circuit and the lower bridge arm circuit are connected to the protection circuit. The protection circuit includes electrical lead-in J1, electrical lead-in J2, and electrical lead-in S. Electrical lead-in J1 is connected to one end of the upper bridge arm circuit, electrical lead-in J2 is connected to one end of the lower bridge arm circuit, and electrical lead-in S is connected to the other end of the upper bridge arm circuit and the lower bridge arm circuit, respectively.

2. The switching module with temperature monitoring and controllable current direction according to claim 1, characterized in that, One NTC resistor is provided, and its two pins, NTC1 and NTC2, are connected to an external control module.

3. A switching module with temperature monitoring and controllable current direction according to claim 1, characterized in that, The protection circuit also includes a TVS device; the TVS device is connected to electrical lead-in J1, electrical lead-in J2 and electrical lead-in S respectively.

4. A switch module with temperature monitoring and controllable current direction according to claim 3, characterized in that, At least one TVS device is provided.

5. A switching module with temperature monitoring and controllable current direction according to claim 4, characterized in that, The TVS device is configured in three parts; the three TVS devices are respectively configured between electrical lead-1 J1 and electrical lead-2 J2, between electrical lead-2 J2 and electrical lead-3 S, and between electrical lead-1 J1 and electrical lead-3 S.

6. A switching module with temperature monitoring and controllable current direction according to claim 5, characterized in that, The TVS device is a transient voltage suppressor diode.

7. A switching module with temperature monitoring and controllable current direction according to claim 1, characterized in that, The upper bridge arm circuit and the lower bridge arm circuit each include at least n switching units, where n is a positive integer and n≥1.

8. A switch module with temperature monitoring and controllable current direction according to claim 7, characterized in that, One end of the n switch units connected in parallel is connected to electrical lead-in J1 or electrical lead-in J2, and the other end of the n switch units connected in parallel is connected to electrical lead-in S.

9. A switch module with temperature monitoring and controllable current direction according to claim 8, characterized in that, The switching unit includes a power semiconductor device Q and a diode D; the source of the power semiconductor device Q is connected to the electrical three-pin S and the positive terminal of the diode D, respectively; the drain of the power semiconductor device Q is connected to the electrical one-pin J1 or the electrical two-pin J2 and the negative terminal of the diode D, respectively.

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