Wafer edge etching apparatus

Abstract

The wafer edge etching device comprises an etching cavity and an etching width control assembly. The etching cavity has a wafer etching cavity inside for accommodating the wafer and performing etching operation. The etching width control assembly comprises at least one pair of positioning rings and at least one etching width ring. The at least one pair of positioning rings are symmetrically arranged on the inner top wall and the inner bottom wall of the etching cavity. The positioning rings, together with the closing of the etching cavity, clamp and position the wafer placed between the positioning ring on the inner top wall and the positioning ring on the inner bottom wall of the etching cavity. The etching width ring is detachably mounted on the positioning ring of the inner bottom wall. The outer peripheral wall of the etching width ring defines an etching area between the outer peripheral wall of the wafer after installation. By replacing the etching width ring with different outer diameters, the width of the etching area can be changed. The wafer edge etching device realizes flexible and accurate control of the etching width of the wafer edge through the design of the etching width control assembly.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and more specifically, to a wafer edge etching device. Background Technology

[0002] In modern industrial production, corrosion technology is widely used in the processing and treatment of various materials. The core of corrosion technology is the selective removal of the surface layer of a material through chemical or physical methods to achieve specific processing effects. This technology has important applications in many fields, including electronics, semiconductors, glass manufacturing, and metal processing. With the continuous development of industrial technology, the requirements for the precision and flexibility of corrosion technology are becoming increasingly stringent. Especially in high-precision processing fields, such as electronic chip manufacturing and semiconductor manufacturing, equipment capable of flexibly controlling the corrosion width is needed. This demand drives the continuous innovation and development of corrosion technology.

[0003] However, traditional etching equipment and methods have some limitations. For example, traditional etching equipment often only allows for etching operations with a fixed width, and cannot flexibly adjust the etching width. If different etching widths are required, different etching equipment or adjustments to the equipment parameters are necessary, which not only increases production costs but also reduces production efficiency. Furthermore, traditional etching equipment has low precision in controlling the etching width, failing to meet the demands of some high-precision machining processes. For example, in electronic chip manufacturing, extremely precise control of the etching width is required to ensure the correctness of the circuit structure. Additionally, traditional etching equipment is complex to operate, requiring specialized technicians for operation and maintenance, which increases production costs and operational difficulty. Utility Model Content

[0004] In view of the problems existing in the prior art described above, this application provides a wafer edge etching device that can meet the requirements of different etching widths at the edge of the oxide silicon wafer.

[0005] To achieve the above and other related objectives, this utility model provides a wafer edge etching apparatus, comprising:

[0006] The etching chamber has an internal wafer etching cavity for accommodating the wafer and performing the etching operation.

[0007] The etching width control assembly includes at least one pair of positioning rings and at least one etching width ring. The at least one pair of positioning rings are symmetrically arranged on the inner top wall and inner bottom wall of the etching chamber. The positioning rings together clamp and position the wafer placed between the positioning rings on the inner top wall and the positioning rings on the inner bottom wall of the etching chamber as the etching chamber closes. The etching width ring is at least detachably mounted on the positioning rings on the inner bottom wall.

[0008] The outer peripheral wall of the etching width ring defines an etching zone between itself and the outer peripheral wall of the wafer after installation. The width of the etching zone can be changed by replacing the etching width ring with one of different outer diameters.

[0009] Optionally, the corrosion width ring and the positioning ring are detachably connected by a pin.

[0010] Optionally, the corrosion width ring and the positioning ring are detachably connected via a snap-fit ​​protrusion and a snap-fit ​​groove.

[0011] Optionally, the outer diameter D of the top edge of the corrosion width ring is determined based on the target corrosion width W and the wafer diameter D. w The relationship is: D = D w -2W×k, where k is the compensation coefficient.

[0012] Optionally, the compensation coefficient k is between 0.8 and 1.0.

[0013] Optionally, the wafer edge etching apparatus further includes an etchant delivery port, disposed on the inner bottom wall of the etching chamber and located directly below the wafer edge.

[0014] Optionally, the side of the corrosion width ring facing the corrosive agent inlet is constructed as a flow guide slope, which extends from the top end of the corrosion width ring to the bottom end and slopes towards the corrosive agent inlet, such that the bottom edge of the corrosion width ring is adjacent to or partially covers the corrosive agent inlet.

[0015] Optionally, the wafer edge etching apparatus further includes a sealing ring disposed between the etching width ring and the inner top wall of the etching chamber, between the etching width ring and the inner bottom wall of the etching chamber, and between the etching width ring and the wafer.

[0016] As described above, the wafer edge etching device provided by this utility model has at least the following beneficial technical effects:

[0017] The wafer edge etching apparatus of this invention includes an etching chamber and an etching width control assembly. The etching chamber has an internal wafer etching cavity for accommodating the wafer and performing etching operations. The etching width control assembly includes at least one pair of positioning rings and at least one etching width ring. The at least one pair of positioning rings are symmetrically arranged on the inner top and bottom walls of the etching chamber. As the etching chamber closes, the positioning rings together clamp and position the wafer placed between the positioning rings on the inner top and bottom walls of the etching chamber. The etching width ring is at least detachably mounted on the positioning ring on the inner bottom wall. After installation, the outer peripheral wall of the etching width ring defines an etching region between itself and the outer peripheral wall of the wafer edge. The width of the etching region can be changed by replacing etching width rings with different outer diameters.

[0018] This invention relates to a wafer edge etching device that achieves flexible and precise control of the etching width through the design of an etching width control component. Operators do not need to replace the entire cavity or perform complex mechanical adjustments; they only need to select and replace an etching width ring with a specific outer diameter to adapt to different process requirements, significantly improving process flexibility and equipment utilization. Attached Figure Description

[0019] Figure 1 The diagram shown is a schematic representation of the wafer edge etching device provided in an optional embodiment of this utility model.

[0020] Figure 2 The diagram shown is a schematic diagram of the wafer edge etching device provided in another optional embodiment of the present invention.

[0021] Figure Labels

[0022] 1. Etching chamber; 11. Wafer etching chamber; 111. Etching width control component; 1111. Positioning ring; 1112. Etching width ring; 1113. Pin; 12. Inner top wall; 13. Inner bottom wall; 14. Etching agent delivery port; 15. Sealing ring; 2. Wafer. Detailed Implementation

[0023] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0024] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Although the illustrations only show components related to this utility model and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this utility model, and the layout of the components may also be more complex.

[0025] This embodiment provides a wafer edge etching apparatus, referring to... Figure 1 and Figure 2 It includes a corrosion chamber 1 and a corrosion width control component 111.

[0026] Reference Figure 1 and Figure 2The etching chamber 1 has an internal wafer etching chamber 11 for accommodating the wafer 2 and performing etching operations. Specifically, the wafer etching chamber 11 is used to accommodate the wafer 2 to be processed and to provide a reaction environment for the etching operation. An etching width control component 111 is provided within the wafer etching chamber 11 for precise control of the etching area. The etching width control component 111 includes a pair of positioning rings 1111 and at least one etching width ring 1112. The at least one pair of positioning rings 1111 are symmetrically arranged on the inner top wall 121 and inner bottom wall 13 of the etching chamber 1. As the etching chamber 1 closes, the positioning rings 1111 together clamp and position the wafer 2 placed between the positioning rings 1111 on the inner top wall 121 and the positioning rings 1111 on the inner bottom wall 13 of the etching chamber 1, effectively limiting the displacement of the wafer 2 during the process and ensuring that the wafer 2 remains in a stable position during etching, providing a basis for uniform etching of the edge region of the wafer 2.

[0027] Reference Figure 1 and Figure 2 In this embodiment, preferably, the positioning ring 1111 and the inner top wall 12 of the corrosion chamber 1, as well as the positioning ring 1111 and the inner bottom wall 13 of the corrosion chamber 1, are all integrally molded structures. The positioning ring 1111 and the inner top wall 12 and inner bottom wall 13 of the corrosion chamber 1 are manufactured as a single component. This design eliminates the loosening and deformation problems that may occur at the connection points in traditional split structures. During the corrosion process, the interior of the corrosion chamber 1 is subjected to certain pressure and chemical corrosion. The integrally molded structure can better resist these external forces and chemical erosion, ensuring that the positioning ring 1111 remains stable during long-term use and will not loosen due to mechanical vibration or chemical corrosion. Furthermore, the integrally molded structure has significant advantages in sealing performance. Since there are no additional connection gaps between the positioning ring 1111 and the inner top wall 12 and inner bottom wall 13 of the corrosion chamber 1, leakage of corrosive agents from these parts can be effectively prevented. This is crucial for maintaining the stability and consistency of the corrosive environment, and also avoids equipment contamination and operational safety risks caused by leakage.

[0028] Reference Figure 1 and Figure 2The etching width ring 1112 is at least detachably mounted on the positioning ring 1111 of the inner bottom wall 13. Specifically, the etching width ring 1112 is stably connected to the positioning ring 1111 through a precision mechanical interface, ensuring that the etching width ring 1112 remains firmly positioned during etching and facilitating quick replacement by operators according to process requirements. Once the etching width ring 1112 is in place, an etching region is defined between the outer peripheral wall of the etching width ring 1112 and the outer peripheral wall of the edge of the wafer 2. This etching region serves as the main space for the chemical reaction between the etchant and the wafer edge. The width of the etching region directly determines the geometric characteristics of the final etching result. By selecting etching width rings 1112 with different outer diameters, the width of this etching region can be precisely adjusted, thereby achieving flexible control of various etching widths to meet the specific requirements of different process flows for edge morphology, thus achieving flexible control of the etching width at the wafer edge. In this embodiment, the outer diameter D of the top edge of the etching width ring 1112 is determined based on the target etching width W and the wafer diameter D of the wafer 2. w The relationship is: D = D w -2W×k, where k is the compensation coefficient. The compensation coefficient k has important process significance in this application, mainly used to compensate for the diffusion effect, edge effect, and corrosion boundary deviation caused by the hydrodynamic characteristics of the corrosive agent during the actual process. This diffusion effect will cause the actual corrosion width to be slightly larger than the theoretical design value, so process calibration is required through coefficient k. In this embodiment, the compensation coefficient k is between 0.8 and 1.0, and can be optimized and selected according to the specific process conditions. In an optional embodiment of this embodiment, the compensation coefficient k is 0.9.

[0029] Reference Figure 1 and Figure 2When etching wafer 2 is required, simply place wafer 2 between the positioning ring 1111 on the inner top wall 12 and the positioning ring 1111 on the inner bottom wall 13 of the etching chamber 1. During placement, pay special attention to ensuring that the side of wafer 2 to be etched faces the positioning ring 1111 on the inner bottom wall 13. This is because the positioning ring 1111 on the inner bottom wall 13 is a key component that cooperates with the etching width ring 1112, ensuring that the etchant can accurately act on the edge of wafer 2. Then, depending on the etching requirements, etching width rings 1112 with different outer diameters are installed on the positioning ring 1111 on the inner bottom wall 13. After the etching width ring 1112 is installed in place, an etching zone is defined between the outer peripheral wall of the etching width ring 1112, the etching chamber 1, and the outer peripheral wall of the edge of wafer 2. This etching zone is the main space for the chemical reaction between the etchant and the edge of wafer 2. The width of the etching zone directly determines the geometric characteristics of the final etching result. By selecting corrosion width rings 1112 with different outer diameter specifications, the width of the corrosion area can be precisely adjusted, thereby achieving flexible control of various corrosion widths.

[0030] To enable rapid replacement of the corrosion width ring 1112, this device provides multiple detachable connection methods. In one optional embodiment of this example, refer to... Figure 1 The corrosion width ring 1112 and the positioning ring 1111 are detachably connected via a latching protrusion and a latching groove. Specifically, the positioning ring 1111 has a latching groove, and the corrosion width ring 1112 has a corresponding latching protrusion that matches the latching groove. In another optional embodiment of this embodiment, referring to... Figure 2 The corrosion width ring 1112 and the positioning ring 1111 are detachably connected via a pin 1113. This method involves coaxial through pin holes on the corresponding edges of the positioning ring 1111 and the corrosion width ring 1112. During installation, the corrosion width ring 1112 is placed on the bearing surface of the positioning ring 1111, all pin holes are aligned, and the pin 1113 is inserted radially or axially to complete the mechanical interlock. Optionally, the pin 1113 can be designed as a quick-release pin with a spring-loaded ball, or as a threaded pin structure to prevent loosening, to adapt to the needs of different vibration environments. This connection method is robust, has high positioning repeatability, and strong resistance to corrosion erosion, making it ideal for high-volume automated production lines with extremely high requirements for connection stability. Both of the above connection methods fully consider the ease of operation and long-term reliability in corrosive environments, ensuring that the corrosion width control component 111 achieves functional modularity and ease of operation without affecting its core process performance and service life, providing solid hardware support for the flexibility and stability of wafer edge etching processes.

[0031] Reference Figure 1 and Figure 2The wafer edge etching apparatus also includes an etchant delivery port 14, located on the inner bottom wall 13 of the etching chamber 1, directly below the wafer edge. In specific implementations, the etchant delivery port 14 can be configured as a ring-shaped porous structure or a slit nozzle to achieve uniform distribution and directional spraying of the etchant. This layout lays a solid foundation for obtaining a consistent edge etching morphology. To further optimize the etching effect, preferably, the side of the etching width ring 1112 facing the etchant delivery port 14 is constructed as a flow-guiding slope. The flow-guiding slope extends from the top to the bottom of the etching width ring 1112 and slopes towards the etchant delivery port 14, so that the bottom edge of the etching width ring 1112 is adjacent to or partially covers the etchant delivery port 14. This flow-guiding slope plays a crucial fluid guiding role during the etching process. When the etchant is ejected from the delivery port 14, it first impacts the surface of the flow-guiding slope and is then effectively guided and redistributed along the preset direction of the slope. This design alters the original flow path of the etchant, concentrating the potentially diffused etchant into a focused fluid, allowing it to flow more precisely and efficiently to the annular etching region at the wafer edge. From a fluid dynamics perspective, this inclined structure not only reduces energy loss during etchant transport but also significantly reduces uneven etchant distribution caused by turbulence and eddies. This guiding inclined surface effectively guides the etchant ejected from the etchant inlet 14, ensuring a more concentrated and efficient flow to the etching region at the wafer edge, thereby ensuring etching uniformity and improving process efficiency. This optimized guiding mechanism ensures uniform circumferential distribution of the etchant at the wafer edge, effectively avoiding the inconsistent etching width problem common in traditional designs. Furthermore, by improving etchant utilization efficiency, it enables faster etching rates under the same process parameters, or reduces etchant consumption while maintaining the same etching rate, thus achieving a comprehensive improvement in process efficiency. In addition, this design helps reduce disordered diffusion of the etchant within the cavity, lowering the potential corrosion risk to other parts of the etching cavity 1 and extending the equipment's service life.

[0032] Reference Figure 1 and Figure 2The wafer edge etching apparatus also includes sealing rings 15, which are disposed between the etching width ring 1112 and the inner top wall 12 of the etching chamber 1, between the etching width ring 1112 and the inner bottom wall 13 of the etching chamber 1, and between the etching width ring 1112 and the wafer 2. During the etching process, the etchant is typically a highly chemically active liquid or gas. The function of the sealing rings 15 is to prevent leakage of the etchant from the various connection points of the etching chamber 1. If the etchant leaks, it will not only contaminate the equipment and working environment but may also pose a safety risk to the operators. By placing sealing rings 15 between the etching width ring 1112 and the inner top wall 12 of the etching chamber 1, and between the etching width ring 1112 and the inner bottom wall 13 of the etching chamber 1, leakage of the etchant from these critical parts can be effectively prevented, ensuring the safe operation of the etching process.

[0033] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A wafer edge etching apparatus, characterized in that, include: An etching chamber, the interior of which has a wafer etching chamber for accommodating a wafer and performing etching operations; The etching width control assembly includes at least one pair of positioning rings and at least one etching width ring. The at least one pair of positioning rings are symmetrically arranged on the inner top wall and inner bottom wall of the etching cavity. The positioning rings together clamp and position the wafer placed between the positioning ring on the inner top wall and the positioning ring on the inner bottom wall of the etching cavity as the etching cavity closes. The corrosion width ring is at least detachably mounted on the positioning ring of the inner bottom wall; The outer peripheral wall of the etching width ring defines an etching region between itself and the outer peripheral wall of the wafer after installation. The width of the etching region can be changed by replacing the etching width ring with one of different outer diameters.

2. The wafer edge etching apparatus according to claim 1, characterized in that, The corrosion width ring and the positioning ring are detachably connected by a pin.

3. The wafer edge etching apparatus according to claim 1, characterized in that, The corrosion width ring and the positioning ring are detachably connected by a snap-fit ​​protrusion and a snap-fit ​​groove.

4. The wafer edge etching apparatus according to claim 1, characterized in that, The outer diameter D of the top edge of the corrosion width ring is determined based on the target corrosion width W and the wafer diameter D. w The relationship is: D = D w -2W×k, where k is the compensation coefficient.

5. The wafer edge etching apparatus according to claim 4, characterized in that, The compensation coefficient k is between 0.8 and 1.

0.

6. The wafer edge etching apparatus according to claim 1, characterized in that, Also includes: The etchant delivery port is located on the inner bottom wall of the etching chamber and directly below the edge of the wafer.

7. The wafer edge etching apparatus according to claim 6, characterized in that, The corrosion width ring is constructed as a flow guiding slope on the side facing the corrosive agent inlet. The flow guiding slope extends from the top end of the corrosion width ring to the bottom end and is inclined towards the corrosive agent inlet, so that the bottom edge of the corrosion width ring is adjacent to or partially covers the corrosive agent inlet.

8. The wafer edge etching apparatus according to claim 1, characterized in that, Also includes: A sealing ring is disposed between the corrosion width ring and the inner top wall of the corrosion cavity, between the corrosion width ring and the inner bottom wall of the corrosion cavity, and between the corrosion width ring and the wafer.

9. The wafer edge etching apparatus according to claim 1, characterized in that, The positioning ring and the inner top wall of the corrosion cavity, as well as the positioning ring and the inner bottom wall of the corrosion cavity, are all integrally formed structures.

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