Magnetron sputtering target adhesion treatment device and magnetron sputtering coating machine

Abstract

This application relates to a magnetron sputtering target adhesion treatment device and a magnetron sputtering coating machine. The device includes: an exhaust assembly, which is parallel to and positioned below the target material, and has a directional micropore array on it, the array pointing towards the target material from at least two sides; a gas source assembly, connected to the exhaust assembly, which provides inert gas to the exhaust assembly, causing the directional micropore array to eject pulsed gas flow that impacts the target material; and a sealing assembly, disposed on the connecting gas path between the exhaust assembly and the gas source assembly, which are located on the inner and outer sides of the sputtering chamber, respectively. The sealing assembly maintains the exhaust assembly's seal against external forces during sputtering. The adhesion treatment operation of this device does not require opening the sputtering chamber, thus preserving the high-temperature and high-vacuum environment within the chamber. This saves time and reduces gas and electricity costs, significantly improving the production efficiency and yield rate of sputtering coating.

Description

Technical Field

[0001] This application relates to the field of photovoltaic cell coating equipment technology, and more specifically, to a magnetron sputtering target adhesion treatment device and a magnetron sputtering coating machine. Background Technology

[0002] In the magnetron sputtering coating process of photovoltaic cells, such as Figure 1 As shown, a parallel array of cylindrical targets 4 is the mainstream structure for depositing transparent conductive films. Depending on the process and coating requirements, a silicon wafer 6 moves above or below the target 4 via a carrier plate to sputter and deposit a transparent conductive film of uniform thickness. However, during production, there is a situation where the silicon wafer 6 detaches and adheres to the surface of the target 4. For example... Figure 1 As shown, when silicon wafer 6 is accidentally dropped or broken, one end may touch the bottom 51 of the chamber, while the other end may overlap the target 4. There is even a possibility that silicon wafer 6 may directly adhere to the target 4. Silicon wafer 6 adhering to the target 4 will affect the normal sputtering of the target 4, causing changes in the microstructure of the deposited film and resulting in coating abnormalities. Since the magnetron sputtering chamber is a high-vacuum environment, existing cleaning methods require opening the chamber, involving a process of cooling → breaking the vacuum → manual cleaning → re-vacuuming → heating. A single process takes more than 10 hours, which is inefficient. Furthermore, opening the chamber requires disrupting and reshaping the vacuum environment, consuming excess argon gas (50L / time) and electrical energy (≥80kWh), and easily introducing particulate contamination, leading to a decrease in yield (approximately 5-8%). Therefore, the production efficiency of existing magnetron sputtering coating equipment is ultimately limited, easily causing significant capacity loss and energy waste, wasting inert gas, leading to increased coating costs and decreased production capacity. Utility Model Content

[0003] This application provides a magnetron sputtering target attachment treatment device and a magnetron sputtering coating machine to solve the problem that in the existing magnetron sputtering coating process, when the target is attached to the silicon wafer, the existing cleaning process requires cavity treatment, which is too time-consuming and wastes gas and electricity, resulting in increased coating costs and reduced production capacity.

[0004] According to the present application, a magnetron sputtering target adhesion treatment apparatus is provided, the apparatus comprising: An air outlet assembly is arranged parallel to the target material below it. A directional micropore array is provided on the air outlet assembly, and the directional micropore array is directed towards the target material from at least two sides. The air source component is connected to the air outlet component. The air source component provides an inert air source to the air outlet component, so that the directional micro-hole array ejects pulsed airflow to impact the target material. The sealing component is installed on the connecting air path between the air outlet component and the air source component. The air outlet component and the air source component are located on the inner and outer sides of the sputtering chamber, respectively. The sealing component maintains the seal of the air outlet component to the outside during sputtering.

[0005] In some embodiments, the air outlet assembly is a parallel tube group, which includes at least two parallel metal air outlet tubes. The metal air outlet tubes are arranged axially parallel to the target material. Each metal air outlet tube is provided with a set of axially extending linear micropore arrays. The linear micropore arrays together form a directional micropore array. One end of each metal air outlet tube is closed, and the other end extends out of the sputtering cavity and is connected to the sealing assembly.

[0006] In some embodiments, the parallel tube assembly includes two metal air outlet tubes, which are symmetrically arranged on both sides below the target material.

[0007] In some embodiments, the micropore diameter of the linear micropore array is 0.3~0.5mm, the spacing between pores is 10~20mm, and the opening direction is at an angle of 30~60° with the vertical direction, so that the ejected airflow is tilted to impact the target material; the vertical distance between each metal air outlet pipe and the target material is 5~10mm, and the pipe diameter is 4~6mm.

[0008] In some embodiments, the micropore diameter of the linear micropore array is 0.5 mm, the aperture spacing is 20 mm, the aperture direction is at a 45° angle to the vertical direction, the vertical distance between the metal air outlet pipe and the target material is 10 mm, and the pipe diameter is 6 mm.

[0009] In some embodiments, each metal air outlet duct is made of stainless steel and its surface is anodized.

[0010] In some embodiments, the linear micro-hole array of each metal air outlet duct is laser-processed, with chamfers at the micro-hole openings and smooth polished inner walls.

[0011] In some embodiments, the sealing component is a CNC high-temperature resistant vacuum valve, which is sealed to a metal exhaust pipe via a vacuum flange; the magnetron sputtering target adhesion treatment device further includes a controller, which is electrically connected to the CNC high-temperature resistant vacuum valve and controls the pulse opening of the CNC high-temperature resistant vacuum valve.

[0012] In some embodiments, the magnetron sputtering target attachment treatment apparatus further includes: an induction probe; the induction probe is installed in the sputtering cavity and is positioned corresponding to the target; and the controller is also electrically connected to the induction probe.

[0013] According to another aspect of this application, a magnetron sputtering coating machine is provided, which is equipped with the magnetron sputtering target adhesion treatment device as described above.

[0014] By applying the technical solution of this application, when the target material is contaminated by silicon wafers, the processing device of this application can directly spray pulsed airflow through the air outlet component arranged parallel below the target material without opening the sputtering chamber, thereby cleaning the silicon wafer and quickly restoring the target material to cleanliness for continued production. Since this process does not require opening the sputtering chamber, it has minimal impact on the vacuum environment inside the chamber, and the increase in chamber pressure caused by the pulsed airflow is low and can be quickly recovered, resulting in rapid processing and saving time, while avoiding the artificial introduction of external particulate contaminants. Furthermore, to be compatible with the high vacuum environment of magnetron sputtering, this application also includes a sealing component between the air outlet component and the air source component. The sealing component keeps the air outlet component sealed to the outside during sputtering operations, thereby maintaining high vacuum for normal production, improving production efficiency and yield. Attached Figure Description

[0015] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This diagram illustrates a scenario where a target material is attached to a silicon wafer within a magnetron sputtering cavity. Figure 2 This paper shows a schematic diagram of the overall structure of a magnetron sputtering target adhesion treatment apparatus according to an embodiment of this application; Figure 3 This is a side view schematic diagram showing the positional relationship between the air outlet assembly and the target material of a magnetron sputtering target material adhesion treatment device according to an embodiment of this application; Figure 4 This is a front view schematic diagram showing the positional relationship between the air outlet assembly and the target material of a magnetron sputtering target material adhesion treatment apparatus according to an embodiment of this application; Figure 5 This paper shows a front view schematic diagram of an array configuration of a magnetron sputtering target adhesion treatment apparatus within a sputtering cavity according to an embodiment of this application; Figure 6 The diagram shows a top view of an array of magnetron sputtering target attachment treatment apparatus in a sputtering cavity according to an embodiment of this application.

[0018] The above figures include the following reference numerals: 1. Air outlet assembly; 11. Directional micropore array; 12. Metal air outlet duct; 121. Linear micropore array; 2. Air source assembly; 3. Sealing assembly; 31. CNC high-temperature resistant vacuum valve; 32. Vacuum flange; 4. Target material; 5. Sputtering chamber; 51. Chamber bottom; 6. Silicon wafer. Detailed Implementation

[0019] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0020] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0021] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways, rotated 90 degrees, or in other orientations, and the spatial relative descriptions used herein will be interpreted accordingly.

[0022] Figures 2 to 6 An embodiment of the magnetron sputtering target adhesion treatment apparatus of this application is illustrated schematically.

[0023] like Figures 2 to 6 As shown, this application discloses a magnetron sputtering target adhesion treatment device, which includes: an air outlet assembly 1, which is arranged parallel to the target 4 below it, and has a directional micropore array 11 on it, which is directed towards the target 4 from at least two sides; an air source assembly 2, which is connected to the air outlet assembly 1 and provides an inert air source to the air outlet assembly 1, causing the directional micropore array 11 to eject pulsed airflow to impact the target 4; and a sealing assembly 3, which is arranged on the connecting air path between the air outlet assembly 1 and the air source assembly 2, which are located on the inner and outer sides of the sputtering cavity 5, respectively, and maintains the air outlet assembly 1 in a sealed manner during sputtering.

[0024] Through the above structural design, in this embodiment, when the target 4 is contaminated by the silicon wafer 6, a pulsed airflow can be directly sprayed through the air outlet assembly 1 arranged parallel below the target 4 to clean the silicon wafer 6 without opening the sputtering chamber 5, thereby quickly restoring the target 4 to cleanliness and allowing production to continue. Since this process does not require opening the sputtering chamber 5, it also avoids disrupting the high temperature (approximately 200~250℃) and high vacuum (10℃) within the chamber. -3 This creates a vacuum environment (level Pa), eliminating the need for cavity opening, cooling, inert gas filling, and vacuuming operations. This saves process time, reduces energy and inert gas consumption, and prevents the artificial introduction of external particulate contaminants. Furthermore, to ensure compatibility with the high vacuum environment of magnetron sputtering, a sealing component 3 is installed between the exhaust assembly 1 and the gas source assembly 2. The sealing component 3 maintains the exhaust assembly 1 in a sealed position during sputtering operations, thus maintaining the high vacuum level of the sputtering chamber for normal production, improving production efficiency and yield.

[0025] In this embodiment, the directional micropore array 11 of the air outlet assembly 1 points towards the target 4 from at least two sides, spraying multi-directional pulsed airflow onto the target 4 to fully cover it, ensuring that the silicon wafer 6 adhering to the target 4 is completely removed. The principle of sputtering deposition is as follows: sputtering particles are generated on the target 4 using a direct current or jet method. Under the action of plasma, the sputtering particles are deposited onto the surface of the silicon wafer 6 to form a transparent conductive film. Therefore, the positional relationship between the target 4 and the silicon wafer 6 significantly affects the film thickness uniformity. The closer the target 4 is to the silicon wafer 6, the higher the sputtering particle density and the thicker the film; conversely, the further apart they are, the thinner the film. When the target 4 is obstructed by the adhering silicon wafer 6, sputtering particle deposition is hindered, leading to uneven film formation and product defects. This embodiment utilizes a pulsed airflow to rapidly purge the target 4, quickly removing residual silicon wafer 6 and eliminating sputtering obstructions. This ensures unobstructed contact between the target 4 and the silicon wafer 6, allowing for sputtering deposition at predetermined distances and positions to form a uniformly thick, electrically compatible transparent conductive film, thus improving sputtering yield. Understandably, the exhaust assembly 1 is designed to avoid obstructing the sputtering particles due to its own presence.

[0026] In some embodiments of this application, such as Figures 2 to 6As shown, the air outlet assembly 1 is a parallel tube group, which includes at least two parallel metal air outlet tubes 12, each of which is axially parallel to the target material 4. Each metal air outlet tube 12 is provided with a set of axially extending linear micropore arrays 121, and the linear micropore arrays 121 together form a directional micropore array 11 to purge the target material 4 from at least two directions. One end of each metal air outlet tube 12 is closed, and the other end extends out of the sputtering cavity 5 and connects to the sealing assembly 3, thereby obtaining a high-pressure inert gas, such as nitrogen or argon. This application uses metal air outlet tubes 12 to form the air outlet assembly 1, which has a simple structure, is easy to obtain materials, and has sufficient rigidity, strength, temperature resistance, and corrosion resistance to meet the high-temperature sputtering environment in the sputtering cavity 5. In addition, by arranging the metal exhaust pipes 12 at intervals in the sputtering cavity 5 to form a parallel pipe group, it is also convenient for the exhaust assembly 1 to form a sufficient gap, so that the silicon wafer 6 after being blown away can fall to the bottom of the sputtering cavity 5 or fall onto the conveyor belt and leave, thereby avoiding secondary interference.

[0027] In some embodiments of this application, such as Figures 4 to 6 As shown, the parallel tube assembly includes two metal exhaust pipes 12, which are symmetrically arranged on both sides below the target material 4. This allows for symmetrical purging, enabling the removal of silicon wafers 6 adhering to both sides of the target material 4. Simultaneously, the symmetrically arranged metal exhaust pipes 12 spray in the same manner, i.e., simultaneously, sequentially, and with the same airflow, thus forming an air curtain to restrict airflow and prevent excessive airflow from impacting the cavity wall of the sputtering chamber 5. This avoids contamination and damage to the sputtering chamber 5 and extends its service life.

[0028] In some embodiments of this application, to adapt to the magnetron sputtering process of photovoltaic cells, the micropore diameter of the linear micropore array 121 is designed to be 0.3~0.5mm, the spacing between the pores is 10~20mm, and the opening direction forms an angle of 30~60° with the vertical direction, so that the ejected airflow obliquely impacts the target material 4, avoiding cavity wall contamination and precisely acting on the center of gravity of the silicon wafer. The vertical distance between each metal air outlet pipe 12 and the target material 4 is 5~10mm, and the pipe diameter is 4~6mm. In the embodiments of this application, the larger the micropore diameter of the linear micropore array 121, the greater the blowing volume and the more effective the purging. However, at the same time, the larger the diameter, the more serious the damage to the vacuum degree of the cavity. Therefore, the diameter is neither better the larger it is nor better the smaller it is. This application, by balancing various factors, sets the aperture between 0.3 and 0.5 mm, and, in conjunction with a vertical distance of 5 to 10 mm between the metal outlet pipe 12 and the target material 4, satisfies the purging force requirements while limiting the air intake, ensuring that the vacuum level can be restored to 10 within 30 minutes. -3 The Pa level balances the requirements for purging power and vacuum formation.

[0029] In some preferred embodiments of this application, the micropore diameter of the linear micropore array 121 is 0.5 mm, the aperture spacing is 20 mm, the aperture direction is at a 45° angle with the vertical direction, the vertical distance between the metal air outlet pipe 12 and the target material 4 is 10 mm, and the pipe diameter is 6 mm, thereby obtaining the best purging and cleaning treatment effect, while simultaneously meeting the vacuum degree recovery efficiency requirements.

[0030] In some embodiments of this application, to adapt to the sputtering environment within the sputtering cavity 5, each metal exhaust duct 12 is made of stainless steel and its surface is anodized. For example, in some embodiments of this application, the metal exhaust duct 12 is made of 316L stainless steel. 316L stainless steel has good corrosion resistance, and its surface is anodized, with a Vickers hardness of HV≥800, which can meet the requirements for high temperature resistance (250℃) and also has anti-fouling and anti-corrosion capabilities.

[0031] In some embodiments of this application, the linear micro-hole array 121 of each metal air outlet duct 12 can be laser-processed. Laser-processed micro-holes can ensure precise hole diameter and avoid clogging, while laser processing is also easy to control. In a preferred embodiment of this application, the micro-hole openings of the linear micro-hole array 121 are chamfered, and the inner walls of the holes are polished smooth to further improve anti-clogging performance and ensure efficient and reliable purging and cleaning.

[0032] In some embodiments of this application, such as Figure 2As shown, the sealing component 3 is a CNC high-temperature resistant vacuum valve 31. The CNC high-temperature resistant vacuum valve 31 is sealed to the metal outlet pipe 12 through a vacuum flange 32 to maintain highly reliable vacuum performance, compatible with the high vacuum level inside the sputtering chamber 5, and effectively prevents the addition of the processing device from interfering with the sputtering process. Correspondingly, in this embodiment, the magnetron sputtering target adhesion processing device also includes a controller (not shown). The controller is electrically connected to the CNC high-temperature resistant vacuum valve 31 to control its pulse opening. Specifically, the pulsed airflow used in this application can be achieved by controlling the external CNC high-temperature resistant vacuum valve 31 through the controller. For example, the CNC high-temperature resistant vacuum valve 31 is intermittently opened for a duration of 0.3~1s, thereby generating a pulsed airflow of 0.3~1s. The CNC high-temperature resistant vacuum valve 31 can be a high-temperature resistant high-vacuum valve of model SMCXLD-40KH0L. This vacuum valve has a pneumatic structure and is used in conjunction with an electromagnetic directional valve. The valve body is resistant to high temperatures and can operate in an environment of 200℃. It is specifically designed for high-vacuum systems and can be connected via a KF40 quick-release flange, making installation convenient. It is suitable for fields such as semiconductor manufacturing and vacuum coating. The controller used in this application only needs to implement simple timing operations, which can be achieved using a commercially available microcontroller based on existing technology. Alternatively, it can be directly implemented using a controller compatible interface of a sputtering coating machine. These methods are not difficult for those skilled in the art and will not be described in detail here.

[0033] In some embodiments of this application, the gas source component 2 is a high-pressure gas cylinder containing an inert gas, such as nitrogen or argon, consistent with the inert gas in the sputtering chamber 5. The gas source pressure is maintained at 0.5~1MPa to generate a pulsed airflow with sufficient impact force to ensure the purging and cleaning effect.

[0034] In some embodiments of this application, the magnetron sputtering target adhesion treatment device further includes an induction probe. The induction probe is installed inside the sputtering cavity 5, corresponding to the target 4. The induction probe is used to detect the adhesion status of the target 4 within the cavity, and to promptly detect any unexpected overlap or obstruction of the silicon wafer 6. Correspondingly, in this embodiment, the controller is also electrically connected to the induction probe, so that when the induction probe detects the presence of silicon wafer 6 adhesion on the target 4, sputtering is stopped in a timely manner, and the treatment device is activated to remove the fault, thereby maintaining the film quality of the transparent conductive film and improving the yield of photovoltaic cell production. Specifically, in the actual sputtering cavity, the induction probe can be a visual processing probe or a plasma emission spectroscopy probe, which monitors the stability of the sputtering process through visual inspection or spectral inspection, and realizes early warning of target 4 adhesion. The specific induction probe model can be selected according to the process, and this application does not limit it.

[0035] According to another aspect of this application, a magnetron sputtering coating machine is also disclosed, which is equipped with the magnetron sputtering target adhesion treatment device as described above, so as to quickly achieve the adhesion treatment of the target 4 without opening the sputtering chamber 5, remove the shielding silicon wafer on the target 4, restore the normal production of the target 4, improve the film quality and finished product yield, and reduce working time loss, power loss and gas source consumption.

[0036] Combination Figures 2 to 6 The following diagram illustrates the working principle of this application: like Figures 2 to 6 As shown in this embodiment, a cylindrical target array is provided inside the sputtering cavity 5, and each cylindrical target 4 is provided with a set of air outlet components 1 for purging. During normal sputtering production, the silicon wafer 6 flows through the sputtering cavity 5 via a conveyor belt and carrier plate (e.g., Figure 6 (As indicated by the arrow). The cylindrical target array within the sputtering chamber 5 sputters and deposits a film onto the silicon wafer 6 under jet or DC drive, producing a transparent conductive film that meets electrical requirements. However, if an accident occurs and one or more targets 4 overlap with the silicon wafer 6, the surface of the target 4 is obstructed, preventing sputtering particles from depositing properly onto the silicon wafer 6. This can lead to uneven sputtering, resulting in decreased film quality and product defects. In this case, the sensing probe in this embodiment detects the overlap of the target 4 and notifies the controller. The controller first stops the sputtering deposition and shuts down the vacuum system of the sputtering chamber 5 to stop the vacuuming operation and avoid interfering with the pulsed airflow purging of the processing device. Then, the controller controls the CNC high-temperature vacuum valve 31 to open in a pulsed jet (0.3-1s) manner, spraying a pulsed airflow to purge the target 4. The number of jets can be preset to 1 to 3. After the gas jet spray ends, the target material 4 is inspected again. Once it is confirmed that no silicon wafer 6 is attached to the target material 4, the controller completely closes the CNC high-temperature vacuum valve 31 and restarts the vacuum system of the sputtering chamber 5 to repeatedly restore the vacuum. Once the preset vacuum level is reached, sputtering production continues. In the applicant's improvement experiment on a typical existing magnetron sputtering process, the traditional manual cavity opening and cleaning method takes approximately 720 minutes per treatment, consumes 50L of argon gas, and carries a high risk of contamination. However, using the embodiment of this application, the processing time per treatment can be shortened to within 40 minutes, argon gas consumption is reduced to 0.5L, and cavity opening contamination is zero. Therefore, the yield of photovoltaic cells is significantly improved by approximately 5%, and the sputtering coating capacity is increased.

[0037] In summary, this embodiment of the application, when the target material is contaminated by the silicon wafer, can directly spray pulsed airflow through the air outlet component arranged parallel below the target material to clean the silicon wafer without opening the sputtering chamber, thereby quickly restoring the target material to cleanliness and allowing production to continue. Since this process does not require opening the sputtering chamber, it also avoids disrupting the high temperature (approximately 200~250°C) and high vacuum (100°C) within the chamber.-3 This creates a vacuum environment (level Pa), eliminating the need for cavity opening, cooling, inert gas filling, and vacuuming operations. This saves process time, reduces energy and inert gas consumption, and prevents the artificial introduction of external particulate contaminants. Furthermore, to ensure compatibility with the high vacuum environment of magnetron sputtering, a sealing component is installed between the exhaust assembly and the gas source assembly. This sealing component keeps the exhaust assembly sealed during sputtering operations, maintaining high vacuum for normal production and improving production efficiency and yield.

[0038] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0039] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0040] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A magnetron sputtering target adhesion treatment device, characterized in that, include: An air outlet assembly (1) is arranged parallel to the target material (4) below it. An directional micropore array (11) is provided on the air outlet assembly (1). The directional micropore array (11) is arranged pointing to the target material (4) from at least two sides. Air source component (2), which is connected to the air outlet component (1), provides an inert air source to the air outlet component (1) so that the directional micropore array (11) ejects a pulsed airflow to impact the target material (4); A sealing component (3) is provided on the connecting air path of the air outlet component (1) and the air source component (2). The air outlet component (1) and the air source component (2) are located on the inner and outer sides of the sputtering cavity (5). The sealing component (3) maintains the air outlet component (1) in a sealed manner during sputtering.

2. The magnetron sputtering target adhesion treatment apparatus according to claim 1, characterized in that, The air outlet assembly (1) is a parallel tube group, which includes at least two parallel metal air outlet tubes (12). The metal air outlet tubes (12) are axially parallel to the target material (4). Each metal air outlet tube (12) is provided with a set of axially extending linear micropore arrays (121). The linear micropore arrays (121) together form the directional micropore array (11). One end of each metal air outlet tube (12) is closed, and the other end extends out of the sputtering cavity (5) and is connected to the sealing assembly (3).

3. The magnetron sputtering target adhesion treatment apparatus according to claim 2, characterized in that, The parallel pipe assembly includes two metal air outlet pipes (12), which are symmetrically arranged on both sides below the target material (4).

4. The magnetron sputtering target adhesion treatment apparatus according to claim 3, characterized in that, The micropores of the linear micropore array (121) have a diameter of 0.3~0.5mm, a spacing of 10~20mm, and an opening direction at an angle of 30~60° to the vertical direction; the vertical distance between each metal air outlet pipe (12) and the target material (4) is 5~10mm, and the pipe diameter is 4~6mm.

5. The magnetron sputtering target adhesion treatment apparatus according to claim 4, characterized in that, The micropores of the linear micropore array (121) have a diameter of 0.5 mm, a spacing of 20 mm, and the opening direction forms a 45° angle with the vertical direction. The vertical distance between the metal air outlet pipe (12) and the target material (4) is 10 mm, and the pipe diameter is 6 mm.

6. The magnetron sputtering target adhesion treatment apparatus according to claim 2, characterized in that, All of the metal air outlet pipes (12) are made of stainless steel and have undergone anodizing treatment.

7. The magnetron sputtering target adhesion treatment apparatus according to claim 2, characterized in that, The linear micro-hole array (121) of each of the metal air outlet pipes (12) is laser-processed, with chamfers at the micro-hole openings and smooth polished inner walls.

8. The magnetron sputtering target adhesion treatment apparatus according to claim 2, characterized in that, The sealing assembly (3) is a CNC high-temperature resistant vacuum valve (31), which is sealed to the metal air outlet pipe (12) through a vacuum flange (32); The magnetron sputtering target adhesion treatment device further includes a controller, which is electrically connected to the CNC high-temperature resistant vacuum valve (31) and controls the CNC high-temperature resistant vacuum valve (31) to open with pulses.

9. The magnetron sputtering target adhesion treatment apparatus according to claim 8, characterized in that, The magnetron sputtering target attachment treatment device further includes: an induction probe; the induction probe is installed in the sputtering cavity (5) and is set corresponding to the target (4); the controller is also electrically connected to the induction probe.

10. A magnetron sputtering coating machine, characterized in that, The magnetron sputtering coating machine is equipped with a magnetron sputtering target adhesion treatment device as described in any one of claims 1-9.

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