LPCVD reactor silane inlet device

Abstract

This application relates to a silane inlet device for an LPCVD reactor, belonging to the field of solar cell technology. The LPCVD reactor silane inlet device includes: a reactor, comprising a furnace body and a tube body, the tube body being disposed inside the furnace body; and a silane inlet pipe inserted into the reactor for supplying silane to the tube body. The portion of the silane inlet pipe inserted into the tube body has multiple diffusion ports, which are spaced apart along the axial direction of the silane inlet pipe and spirally spaced around its circumference. This LPCVD reactor silane inlet device can improve the uniformity of silane distribution, improve the thickness uniformity of the deposited polycrystalline silicon layer, and improve the yield of silicon wafers.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and more specifically, to a silane inlet device for an LPCVD reactor. Background Technology

[0002] Low-pressure chemical vapor deposition (LPCVD) is a technology that uses a gas source in a low-pressure environment to chemically react on the surface of a substrate to deposit the desired thin film material. It is widely used in material deposition processes in semiconductor manufacturing, optoelectronics, thin-film solar cells, and other fields.

[0003] Currently, in common LPCVD reactors, the silane inlet pipe is inserted into the furnace tube along the length of the reactor, and silane is fed into the furnace tube through a single outlet at the end. However, this can easily lead to uneven distribution of silane inside the furnace tube, resulting in uneven silane deposition thickness, which in turn causes uneven thickness of the deposited polycrystalline silicon layer, reducing the yield of silicon wafers. Utility Model Content

[0004] Therefore, this application proposes a silane inlet device for an LPCVD reactor, which can improve the uniformity of silane distribution, improve the uniformity of the thickness of the deposited polycrystalline silicon layer, and improve the yield of silicon wafers.

[0005] Some embodiments of this application include an LPCVD reactor silane inlet device comprising: a reactor, including a furnace body and a tube body, the tube body being disposed inside the furnace body; and a silane inlet pipe inserted into the reactor for supplying silane to the tube body; wherein the portion of the silane inlet pipe inserted into the tube body is provided with a plurality of diffusion ports, the plurality of diffusion ports being spaced apart along the axial direction of the silane inlet pipe and spirally spaced around the circumference of the silane inlet pipe.

[0006] Optionally, the distance between two adjacent diffusers along the axial direction of the silane inlet pipe is W, satisfying: 8cm≤W≤50cm.

[0007] Optionally, the angle between two adjacent diffusers along the circumference of the silane inlet pipe is α, satisfying: 30°≤α≤120°.

[0008] Optionally, the diameter of the silane inlet pipe is D, and the aperture of the diffuser is d, satisfying: 0.05≤d / D≤0.2.

[0009] Optionally, the LPCVD reactor silane inlet device further includes an oxygen inlet pipe, which is inserted into the reactor to supply oxygen to the pipe body.

[0010] Optionally, two oxygen inlet pipes are provided, and the two oxygen inlet pipes are spaced apart along the length of the pipe body, and the oxygen inlet pipes are located on the bottom side of the reactor.

[0011] Optionally, the LPCVD reactor silane inlet device further includes an extraction pipe, which is inserted into the reactor for extracting gas from the pipe body.

[0012] Optionally, the reactor includes a furnace head and a furnace tail, the silane inlet pipe and the exhaust pipe are located at the furnace tail, and the furnace head is provided with a furnace door.

[0013] Optionally, the LPCVD reactor silane inlet device further includes a silane supply device and a reducing pipe. The reducing pipe includes a large end and a small end. One of the large end and the small end is connected to the portion of the silane inlet pipe located outside the pipe body, and the other extends outside the furnace body and is connected to the silane supply device.

[0014] Optionally, the silane inlet pipe includes multiple silane inlet pipes, which extend along the axial direction of the pipe body. The multiple silane inlet pipes are circumferentially spaced around the axis of the pipe body, and a silicon wafer placement space is formed between the multiple silane inlet pipes.

[0015] Compared with existing technologies, this solution has the following advantages:

[0016] The silane inlet pipe of the LPCVD reactor silane inlet device of this application embodiment includes multiple diffusion ports. The multiple diffusion ports are spaced apart along the axial direction of the silane inlet pipe and spirally spaced around the circumference of the silane inlet pipe. This not only allows for uniform diffusion of silane along the axial direction of the silane inlet pipe, but also allows for uniform diffusion of silane around the circumference of the silane inlet pipe, making the silane uniformly distributed inside the pipe, improving the thickness uniformity of the deposited polycrystalline silicon layer, and improving the yield of silicon wafers.

[0017] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the silane gas inlet device for the LPCVD reactor provided in the embodiments of this application;

[0020] Figure 2 for Figure 1 A magnified view of a section at point A in the middle;

[0021] Figure 3 This is a schematic diagram of the tail section of the LPCVD reactor silane inlet device provided in an embodiment of this application.

[0022] Figure 4 A schematic diagram of the silane inlet pipe of the LPCVD reactor silane inlet device provided in the embodiments of this application. Figure 1 ;

[0023] Figure 5 A schematic diagram of the silane inlet pipe of the LPCVD reactor silane inlet device provided in the embodiments of this application. Figure 2 .

[0024] Icons: 100-LPCVD reactor silane inlet device; 110-Reactor; 111-Furnace body; 112-Pipe body; 113-Furnace head; 114-Furnace tail; 115-Furnace bottom; 116-Furnace door; 1161-Inner furnace door; 1162-Outer furnace door; 120-Silane inlet pipe; 121-First end; 1211-Outlet; 122-Second end; 123-Diffuser port; 1231-First diffuser port; 1232-Second diffuser port; 1233-Third diffuser port; 124-Silicon wafer placement space; 130-Oxygen inlet pipe; 140-Ejector pipe; 150-Silane supply device; 160-Reducing pipe; 161-Large end; 162-Narrow end; 171-First sealing joint; 172-Second sealing joint. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0027] like Figure 1 and Figure 4As shown, the LPCVD reactor silane inlet device 100 of some embodiments of this application includes a reactor 110 and a silane inlet pipe 120. The reactor 110 includes a furnace body 111 and a pipe body 112, with the pipe body 112 disposed inside the furnace body 111. The silane inlet pipe 120 is inserted into the reactor 110 to supply silane to the pipe body 112. The portion of the silane inlet pipe 120 inserted into the pipe body 112 is provided with a plurality of diffuser ports 123, which are spaced apart along the axial direction of the silane inlet pipe 120 and spirally spaced around the circumference of the silane inlet pipe 120.

[0028] The reactor 110 extends along the first direction X in its length direction, along the second direction Y in its width direction, and along the third direction Y in its height direction. The silane inlet pipe 120 extends along the first axis P in its axial direction, and the tube body 112 extends along the second axis Q in its axial direction. The first direction X, the first axis P, and the second axis Q are arranged parallel to each other. The tube body 112 is disposed inside the furnace body 111, and there is a gap between the tube body 112 and the furnace body 111. The tube body 112 has a silicon wafer placement space 124 inside. When the furnace body 111 is heated, heat is transferred to the tube body 112, and the tube body 112 is heated uniformly to maintain a preset furnace temperature inside the tube body 112 so that the chemical reaction can take place at the preset temperature.

[0029] The silane inlet pipe 120 has a first end 121 and a second end 122 at its two ends along the first axis P. The first end 121 is located inside the pipe body 112 and has an outlet 1211. The second end 122 is located between the furnace body 111 and the pipe body 112 and is connected to the outside of the furnace body 111 through a reducer pipe 160. The outlet 1211 and a plurality of diffusers 123 are provided in the portion of the silane inlet pipe 120 located inside the pipe body 112 to feed silane into the pipe body 112.

[0030] The silane inlet pipe 120 of the LPCVD reactor silane inlet device 100 of this application embodiment includes a plurality of diffuser ports 123. The plurality of diffuser ports 123 are spaced apart along the axial direction of the silane inlet pipe 120 and are spirally spaced around the circumference of the silane inlet pipe 120. This not only allows for uniform diffusion of silane along the axial direction of the silane inlet pipe 120, but also allows for uniform diffusion of silane around the circumference of the silane inlet pipe 120, so that the silane is uniformly distributed inside the pipe body 112, thereby improving the uniformity of the thickness of the deposited polycrystalline silicon layer and improving the yield of silicon wafers.

[0031] like Figure 4 As shown, in some embodiments of this application, the distance between two adjacent diffuser ports 123 along the axial direction of the silane inlet pipe 120 is W, which satisfies: 8cm≤W≤50cm.

[0032] For example, the length L of the silane inlet pipe 120 is 230cm. Starting from the second end 122, a first diffuser 1231 is provided at 160cm, a second diffuser 1232 is provided at 180cm, and a third diffuser 1233 is provided at 200cm. The distance W between two adjacent diffusers 123 on the first axis P is 20cm. Alternatively, W could be 8cm, 25cm, 40cm, 50cm, etc.

[0033] This configuration allows for proper diffusion of silane along the first axis P, resulting in a uniform distribution of silane inside the tube 112.

[0034] like Figure 5 As shown, in some embodiments of this application, the included angle between two adjacent diffuser ports 123 along the circumference of the silane inlet pipe 120 is α, satisfying: 30°≤α≤120°.

[0035] For example, the first diffuser 1231, the second diffuser 1232 and the third diffuser 1233 are arranged circumferentially around the first axis P, and the included angle α between two adjacent diffusers 123 is 30°; for another example, α can also be 45°, 60°, 90°, 120°, etc.

[0036] With this configuration, silane can be diffused appropriately around the first axis P, so that the silane inside the tube 112 is evenly distributed.

[0037] like Figure 5 As shown, in some embodiments of this application, the diameter of the silane inlet pipe 120 is D, and the aperture of the diffuser 123 is d, satisfying: 0.05≤d / D≤0.2.

[0038] For example, d = 15mm, D = 15cm, d / D = 0.1; another example, d = 15mm, D = 30cm, d / D = 0.05; yet another example, d = 10mm, D = 5cm, d / D = 0.2.

[0039] In some embodiments of this application, the aperture d of each diffuser 123 is the same; in other embodiments, the aperture d of the diffuser 123 may gradually decrease along the direction close to the first end 121.

[0040] This configuration allows the silane output from each diffuser 123 to be controlled within a suitable range, maintaining a uniform silane distribution inside the tube 112.

[0041] like Figure 1 As shown, in some embodiments of this application, the LPCVD reactor silane inlet device 100 further includes an oxygen inlet pipe 130, which is inserted into the reactor 110 to supply oxygen to the pipe body 112.

[0042] The oxygen inlet pipe 130 passes through the furnace body 111 and is inserted into the pipe body 112, with the other end connected to an external oxygen supply device.

[0043] This configuration allows oxygen to be supplied into the tube 112, ensuring the normal progress of the chemical reaction.

[0044] like Figure 1 As shown, in some embodiments of this application, two oxygen inlet pipes 130 are provided, and the two oxygen inlet pipes 130 are spaced apart along the length of the pipe body 112. The oxygen inlet pipes 130 are located on the bottom side of the reactor 110.

[0045] Two oxygen inlet pipes 130 are spaced apart along the first direction X, and both are vertically inserted into the pipe body 112 from the bottom of the furnace 115.

[0046] This configuration ensures a uniform oxygen supply inside the tube 112, improving the uniformity of the deposited polycrystalline silicon layer thickness and increasing the yield of silicon wafers.

[0047] like Figure 1 and Figure 3 As shown, in some embodiments of this application, the LPCVD reactor silane inlet device 100 further includes an extraction pipe 140, which is inserted into the reactor 110 and used to extract gas from the pipe body 112.

[0048] The exhaust pipe 140 passes through the furnace body 111 and is inserted into the tube body 112. Its outer end is connected to an external exhaust device, and air is exhausted by exhaust. The exhaust device can be a vacuum pump, a negative pressure fan, etc.

[0049] This configuration allows for efficient airflow and ensures the normal operation of the chemical reaction inside the pipe 112.

[0050] like Figure 1 As shown, in some embodiments of this application, the reactor 110 includes a furnace head 113 and a furnace tail 114, a silane inlet pipe 120 and an exhaust pipe 140 are disposed at the furnace tail 114, and the furnace head 113 is provided with a furnace door 116.

[0051] The reactor 110 has a furnace head 113 and a furnace tail 114 at its two ends along the first direction X. The furnace head 113 is provided with a furnace door 116. Silicon wafers are fed into the tube body 112 through the furnace door 116 and removed from the furnace door 116. The silane inlet pipe 120 and the exhaust pipe 140 are both inserted into the tube body 112 of the reactor 110 from the furnace tail 114.

[0052] Specifically, the tube body 112 has an inner furnace door 1161, and the furnace body 111 has an outer furnace door 1162. The inner furnace door 1161 is opened by a cylinder to expose the opening of the tube body 112, and the outer furnace door 1162 is opened by a cylinder to expose the opening of the furnace body 111, which facilitates the entry and exit of silicon wafers into and out of the tube body 112.

[0053] This configuration allows for material to be fed and discharged from one side of the furnace head 113, with pipelines centrally arranged at the furnace tail 114, making reasonable use of the installation space of the reactor 110 and improving operational safety and convenience.

[0054] like Figure 1 and Figure 2 As shown, in some embodiments of this application, the LPCVD reactor silane inlet device 100 further includes a silane supply device 150 and a reducing pipe 160. The reducing pipe 160 includes a large end 161 and a small end 162. One of the large end 161 and the small end 162 is connected to the portion of the silane inlet pipe 120 located outside the pipe body 112, and the other extends outside the furnace body 111 and is connected to the silane supply device 150.

[0055] The diameter of the reducing pipe 160 gradually decreases from the coarse end 161 to the fine end 162. The coarse end 161 is located between the furnace body 111 and the pipe body 112, and is connected to the second end 122 of the silane inlet pipe 120 through the first sealing joint 171. The fine end 162 is located outside the reactor 110 and is connected to the silane supply device 150 through the second sealing joint 172. In other embodiments, the fine end 162 may be connected to the silane supply device 150, and the coarse end 161 may be connected to the silane inlet pipe 120. The outlet pipe of the silane supply device 150 is also equipped with a regulating valve for precisely adjusting the outlet flow rate.

[0056] This configuration allows for flexible matching of the diameter variations of the connector between the silane supply device 150 and the silane inlet pipe 120, enabling the silane to be delivered into the interior of the pipe body 112 via the silane inlet pipe 120.

[0057] like Figure 2 and Figure 3 As shown, in some embodiments of this application, the silane inlet pipe 120 includes a plurality of silane inlet pipes 120, which extend along the axial direction of the pipe body 112. The plurality of silane inlet pipes 120 are circumferentially spaced around the axis of the pipe body 112, and a silicon wafer placement space 124 is formed between the plurality of silane inlet pipes 120.

[0058] A silane inlet pipe 120 extends along a first axis P, and multiple silane inlet pipes 120 are circumferentially spaced around a second axis Q. For example, four silane inlet pipes 120 are provided, circumferentially spaced around the second axis Q, forming a silicon wafer placement space 124 between the four silane inlet pipes 120. The pipe body 112 also has a frame for placing silicon wafers, which will not be further described here. The number of silane inlet pipes 120 can also be three, five, six, etc.

[0059] The exhaust pipe 140 is positioned between the four silane inlet pipes 120 to make reasonable use of the installation space at the furnace tail 114.

[0060] This configuration allows for uniform diffusion of silane around the second axis Q, resulting in a uniform distribution of silane around the silicon wafer.

[0061] like Figures 1 to 5 As shown, in this embodiment of the LPCVD reactor silane inlet device 100, the silane inlet pipe 120 and the exhaust pipe 140 are both located at the furnace tail 114. The four silane inlet pipes 120 are circumferentially spaced around the second axis Q. The exhaust pipe 140 is located between the four silane inlet pipes 120. Two oxygen inlet pipes 130 are inserted into the tube body 112 from the furnace bottom 115. The silane inlet pipe 120 is provided with multiple diffuser ports 123. The multiple diffuser ports 123 are spaced along the first axis P. The distance between two adjacent diffuser ports 123 is W = 20 cm. The multiple diffuser ports 123 are spirally distributed around the first axis P. The included angle α between two adjacent diffuser ports 123 is 30°. The aperture d of the diffuser port 123 is 15 mm. The diameter D of the silane inlet pipe 120 is 15 cm. This can effectively improve the uniformity of silane distribution inside the tube body 112, improve the uniformity of the thickness of the deposited polycrystalline silicon layer, and improve the yield of silicon wafers.

[0062] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.

[0063] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A silane gas inlet device (100) for an LPCVD reactor, characterized in that, include: The reactor (110) includes a furnace body (111) and a tube body (112), wherein the tube body (112) is disposed inside the furnace body (111); A silane inlet pipe (120) is inserted into the reactor (110) to supply silane to the pipe body (112); The portion of the silane inlet pipe (120) inserted into the pipe body (112) is provided with a plurality of diffuser ports (123). The plurality of diffuser ports (123) are spaced apart along the axial direction of the silane inlet pipe (120) and are spirally spaced around the circumference of the silane inlet pipe (120).

2. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The distance W between two adjacent diffusers (123) along the axial direction of the silane inlet pipe (120) satisfies: 8cm≤W≤50cm.

3. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The angle between two adjacent diffusers (123) along the circumference of the silane inlet pipe (120) is α, satisfying: 30°≤α≤120°。 4. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The diameter of the silane inlet pipe (120) is D, and the diameter of the diffuser (123) is d, satisfying the following: 0.05≤d / D≤0.

2.

5. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The LPCVD reactor silane inlet device (100) also includes an oxygen inlet pipe (130), which is inserted into the reactor (110) to supply oxygen to the pipe body (112).

6. The silane inlet device (100) for the LPCVD reactor according to claim 5, characterized in that, There are two oxygen inlet pipes (130), which are spaced apart along the length of the pipe body (112) and are located on the bottom side of the reactor (110).

7. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The LPCVD reactor silane inlet device (100) also includes an extraction pipe (140), which is inserted into the reactor (110) and used to extract gas from the pipe body (112).

8. The silane inlet device (100) for the LPCVD reactor according to claim 7, characterized in that, The reactor (110) includes a furnace head (113) and a furnace tail (114), the silane inlet pipe (120) and the exhaust pipe (140) are located at the furnace tail (114), and the furnace head (113) is provided with a furnace door (116).

9. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The LPCVD reactor silane inlet device (100) further includes a silane supply device (150) and a reducer (160). The reducer (160) includes a large end (161) and a small end (162). One of the large end (161) and the small end (162) is connected to the portion of the silane inlet pipe (120) located outside the pipe body (112), and the other extends outside the furnace body (111) and is connected to the silane supply device (150).

10. The silane inlet device (100) for the LPCVD reactor according to claim 1, characterized in that, The silane inlet pipe (120) includes a plurality of pipes, which extend along the axial direction of the pipe body (112). The plurality of silane inlet pipes (120) are circumferentially spaced around the axis of the pipe body (112), and a silicon wafer placement space (124) is formed between the plurality of silane inlet pipes (120).

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