A furnace backflushing system for preparing silicon-carbon anode materials based on vapor deposition

Abstract

This invention discloses a kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition. The system includes a filtration unit for controlling material overflow; a backflushing unit comprising a primary solenoid valve and a backflushing nozzle with its spray direction opposite to the filtration unit; the primary solenoid valve being signal-connected to a controller, enabling it and the backflushing nozzle to cooperate in pulse-style backflushing of the filtration unit; an impurity collection unit for directional collection of impurities from the kiln outlet; and a tail gas treatment unit comprising a tail gas treatment device and a secondary solenoid valve controlled by the controller, with its timing coordinated with the backflushing unit to avoid peak congestion. This invention achieves closed-loop control throughout the entire process of "pressure stabilization – impurity removal – tail gas treatment – ​​material management," solving core problems such as low product yield due to pressure fluctuations and airflow turbulence during kiln operation, as well as secondary pollution caused by impurity accumulation and tail gas leakage.

Description

Technical Field

[0001] This utility model relates to the field of chemical vapor deposition equipment technology, specifically to a kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition. Background Technology

[0002] In the chemical vapor deposition process, the kiln is one of the commonly used equipment. However, the kiln often faces some problems during operation. (1) Due to pressure fluctuations and airflow turbulence, the product yield is easily reduced. (2) The backflushing gas pressure and flow rate are unstable. When the pressure is insufficient, the dust removal effect is poor. When the pressure is too high, too much material may be lifted, resulting in a decrease in yield or an increase in gas-solid separation load. The fine powder lifted by the backflushing is not effectively recovered and is directly discharged with the tail gas, resulting in material loss and a decrease in yield. The temperature difference between the backflushing gas and the furnace is large, which may cause local thermal stress and affect the life of furnace tubes and components. When the gas is not heated sufficiently, it may also lead to water vapor condensation and material agglomeration. (3) The accumulation of impurities and tail gas leakage will also cause secondary pollution, which will not only affect the production environment, but also increase the overall production cost and bring many inconveniences to production. Therefore, a new backflushing system is urgently needed to solve the above-mentioned problems. Utility Model Content

[0003] This invention addresses at least one technical problem in the prior art by disclosing a kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition. This invention achieves functional integration through the coordinated operation of a backflushing unit, an impurity collection unit, a tail gas treatment unit, and a filtration unit. This not only balances the airflow distribution inside the kiln but also realizes a closed-loop control throughout the entire process of "pressure stabilization - impurity removal - tail gas treatment - material management." The backflushing unit only acts on the filtration unit. The tail gas discharged from the filtration unit is treated by the tail gas treatment device, while the generated solid and liquid impurities are collected by a one-way valve in the impurity collection unit, thus preventing impurity backflow. This solves the core problems of low product yield caused by pressure fluctuations and airflow turbulence during kiln operation, as well as secondary pollution caused by impurity accumulation and tail gas leakage.

[0004] This utility model is achieved through the following technical solution: This invention first provides a kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition, including... The filter unit is installed on the material channel at the kiln outlet to control material overflow. The backflush unit includes a No. 1 solenoid valve and a backflush nozzle with the spray direction opposite to the filter unit. The No. 1 solenoid valve is connected to the controller so that the No. 1 solenoid valve and the backflush nozzle cooperate to perform pulse backflush on the filter unit. Impurity collection unit, used for the directional collection of impurities from the kiln outlet; The exhaust gas treatment unit includes an exhaust gas treatment device and a second solenoid valve. The second solenoid valve is controlled by a controller and its timing is coordinated with that of the backflushing unit to avoid peak conditions.

[0005] As a further improvement, the backflushing unit includes a backflushing nozzle, a gas storage device, a gas delivery pump, and a gas heater connected in sequence by pipelines. The gas heater is connected to a gas source. A pressure reducing valve is installed at the outlet of the gas storage device. A solenoid valve and a pressure gauge are installed on the pipeline between the pressure reducing valve and the backflushing nozzle. The pressure gauge signal is connected to a controller. The backflushing nozzle is installed at the kiln outlet.

[0006] As a further improvement, the pressure reducing valve is a high-temperature resistant pressure reducing valve with a maximum temperature tolerance of 450℃ and an output pressure of 0-25psig.

[0007] As a further improvement, the maximum heating temperature of the gas heater is 850°C.

[0008] As a further improvement, both solenoid valve No. 1 and solenoid valve No. 2 are high-temperature resistant solenoid valves with a maximum withstand temperature of 1150℃.

[0009] As a further step, the gas source is a high-purity inert gas.

[0010] As a further alternative, the controller can be a PLC set up separately for this system or an external central control room.

[0011] As a further improvement, the backflush nozzle has a backflush angle range of 20°-80° and a backflush distance of ≤1m.

[0012] As a further improvement, the gas storage device has a cavity structure, and the cross-sectional area of ​​the cavity is larger than that of the pipeline. A spare gas outlet and a spare gas inlet are also provided on one side of the cavity.

[0013] As a further improvement, the impurity collection unit includes a funnel, a collection section, and a one-way valve. The upper opening of the funnel is sealed to the outside of the kiln outlet, and the lower opening is connected to the collection section through the one-way valve, forming a directional impurity collection channel.

[0014] As a further step, the collection section can be a collection bag or a collection box.

[0015] As a further improvement, the exhaust gas treatment unit also includes an exhaust gas discharge pipe, a No. 2 solenoid valve installed above the exhaust gas discharge pipe, one end of the exhaust gas discharge pipe is connected to the exhaust gas discharge point at the kiln outlet, and the other end is connected to the exhaust gas treatment device.

[0016] As a further improvement, the exhaust gas treatment device adopts a horizontal TO direct-fired incinerator, and the gas is discharged after being filtered by a bag filter at the end.

[0017] As a further improvement, the filtration unit is a filter element, which is installed on the material flow path at the kiln outlet via a filter element flange, and is connected to the spray range of the backflushing nozzle, the inlet of the funnel, and the interface of the exhaust pipe to achieve joint material processing.

[0018] As a further improvement, the filter element can withstand temperatures from -30℃ to 700℃ and has a filtration accuracy of less than 1 micron.

[0019] The features and beneficial effects of this utility model are as follows: (1) This utility model achieves functional integration through the coordinated linkage of the backflush unit, the impurity collection unit, the tail gas treatment unit and the filtration unit: the backflush unit outputs high-purity inert gas, and combined with the pressure closed-loop control mechanism, accurately maintains the internal pressure of the kiln, and avoids material splashing and equipment damage caused by excessive pressure; the impurity collection unit relies on the design of directional funnel and one-way valve to efficiently capture solid and liquid impurities generated by gas side reactions, and eliminates secondary pollution caused by impurity backflow through physical isolation structure; the tail gas treatment unit adopts time-series coordinated control to simultaneously recover waste gas and unreacted raw material gas, which reduces harmful emissions and realizes raw material recycling; the filtration unit forms a physical barrier through high-precision filter element, strictly controls the amount of material overflow, and maintains filtration efficiency in conjunction with the self-cleaning effect of backflush airflow, thereby improving product yield from the source and solving the core problems of low product yield caused by pressure fluctuation and airflow turbulence during kiln operation, as well as secondary pollution caused by impurity accumulation and tail gas leakage.

[0020] (2) Through the collaborative optimization of multiple units, this utility model not only balances the airflow distribution inside the kiln, but also realizes the closed-loop control of the entire process of "pressure stabilization - impurity removal - tail gas treatment - material management". Through practical application verification, the product quality and production efficiency are effectively improved, and the overall production cost is significantly reduced. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram illustrating the working principle of the kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition, as described in this embodiment of the invention. Figure 2 This is a schematic diagram of the gas storage device described in an embodiment of the present invention.

[0023] Explanation of reference numerals in the attached figures: 1-Backflush nozzle; 2-Pressure reducing valve; 3-Gas storage device; 31-Spare air outlet; 32-Spare air inlet; 4-Gas delivery pump; 5-Gas heater; 6-Solenoid valve No. 1; 7-Function funnel; 8-Collection section; 9-Check valve; 10-Exhaust gas discharge pipe; 11-Solenoid valve No. 2; 12-Exhaust gas treatment device; 13-Filter element; 14-Gas source; 15-Pressure gauge. Detailed Implementation

[0024] To facilitate understanding of this utility model, a more comprehensive description of this utility model will be provided below, along with embodiments of this utility model, but this does not limit the scope of this utility model.

[0025] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0026] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0027] A furnace backflushing system for preparing silicon-carbon anode materials based on vapor deposition, such as Figure 1 and Figure 2 As shown, it includes a backflushing unit, an impurity collection unit, an exhaust gas treatment unit, and a filtration unit. The filter unit is installed on the material channel at the kiln outlet to control material overflow. The backflush unit includes a solenoid valve and a backflush nozzle whose spray direction is opposite to that of the filter unit. The solenoid valve is connected to the controller, causing the solenoid valve and the backflush nozzle to work together to perform pulse-style backflush on the filter unit. Impurity collection unit, used for the directional collection of impurities from the kiln outlet; The exhaust gas treatment unit includes an exhaust gas treatment device 12 and a second solenoid valve 11. The second solenoid valve is controlled by a controller and coordinates with the timing of the backflushing unit to avoid peak periods.

[0028] The backflush unit includes a backflush nozzle 1, a gas storage tank 3, a gas delivery pump 4, and a gas heater 5 connected in sequence by pipelines. The gas heater 5 is connected to a gas source 14. A pressure reducing valve 2 is installed at the outlet of the gas storage tank 3. A solenoid valve 6 and a pressure gauge 15 are installed on the pipeline between the pressure reducing valve 2 and the backflush nozzle 1. The backflush nozzle 1 is installed at the kiln outlet.

[0029] Solenoid valve 6 (number one), solenoid valve 11 (number two), and pressure gauge 15 are all connected to the controller. The controller can be a PLC set up separately for this system (preferably, model S7-200 SMART) or an external central control room, as long as it can realize the functions of this application.

[0030] The controller, solenoid valve 6, and pressure gauge 15 are all existing devices, and their signal connection methods are also existing technologies. The improvements in this application are structural improvements and do not involve improvements to the circuit or communication methods, so they will not be described in detail here.

[0031] In some embodiments, the backflush nozzle 1 has a backflush angle range of 20°-80° and a backflush distance ≤1m.

[0032] In some embodiments, pressure reducing valve 2 is a high-temperature resistant pressure reducing valve with a maximum withstand temperature of 450°C. The model is HTRW13, and the output pressure is 0-25 psig.

[0033] In some embodiments, the gas heater 5 is QL-KQ-8956, which has a maximum heating stability of 850°C.

[0034] In some embodiments, both solenoid valve 6 and solenoid valve 11 are high-temperature resistant solenoid valves with a maximum withstand temperature of 1150℃ and model number D641W-6SS.

[0035] The gas transfer pump 4 is model YCSR-100A. The pressure gauge 15 is model MIK-P3000.

[0036] Solenoid valve 6, in conjunction with pressure gauge 15, controls the flow of backflush air. The pressure reducing valve 2 of the backflush unit stabilizes the backflush gas pressure between 0.1 and 0.5 MPa. Pressure gauge 15 has a maximum control limit of 50 kPa. Specifically, when the PLC detects that the pressure on pressure gauge 15 reaches 50 kPa, it controls solenoid valve 6 to open, allowing backflush nozzle 1 to perform a jet-type backflush with a 60° backflush angle and a backflush distance of up to 1 meter, effectively acting on the filter unit. Gas heater 5 heats the gas. After the gas from gas source 14 is heated, it is forcibly transported to backflush nozzle 1 via gas pipe by gas pump 4, achieving heat transfer. The gas flow is continuously transferred to meet the heating requirements. After heating, the gas temperature is controlled within the range of 30-500℃. This temperature can be achieved by setting the gas heater 5 separately. The gas storage device 3 is used to store gas. When the first solenoid valve 6 is opened and a large amount of gas is needed, the gas stored there can be quickly transferred to the backflush nozzle 1 through the pipeline to avoid a sudden drop in gas pressure. When the demand for gas decreases, the excess gas is temporarily stored in the storage device 3 to prevent a sudden increase in pressure in the pipeline from impacting the pipeline or equipment, ensuring that the gas pressure is stable and the flow rate is uniform, and improving the working accuracy and reliability of the gas-using components.

[0037] In some embodiments, the gas storage device 3 is a cavity structure, and the cross-sectional area of ​​the cavity is larger than the cross-sectional area of ​​the pipeline. A spare gas outlet 31 and a spare gas inlet 32 ​​are also provided on one side of the cavity.

[0038] Gas source 14 is a high-purity inert gas.

[0039] The backflushing unit outputs high-purity inert gas, which, combined with the pressure closed-loop control mechanism, precisely maintains the stability of the internal pressure of the kiln, avoiding material splashing and equipment damage caused by excessive pressure. The high-purity inert gas is heated by the gas heater 5, which can extend the service life of the filter unit and prevent liquid impurities from condensing on the inner wall of the filter unit and connection due to low-temperature gas.

[0040] The impurity collection unit includes a funnel 7, a collection section 8, and a one-way valve 9. The upper opening of the funnel 7 is sealed to the outside of the kiln outlet, and the lower opening is connected to the collection section 8 through the one-way valve 9, forming a directional impurity collection channel. The one-way valve 9 only allows impurities to flow unidirectionally from the funnel 7 to the collection section 8, preventing impurities in the collection section 8 from flowing back into the kiln.

[0041] Collection section 8 consists of collection bags or collection boxes.

[0042] The impurity collection unit relies on the funnel 7 and the one-way valve 9 to form a directional impurity collection channel, which efficiently captures solid and liquid impurities generated by gas side reactions and prevents secondary pollution caused by impurity backflow through a physical isolation structure.

[0043] The exhaust gas treatment unit includes an exhaust gas discharge pipe 10 and a second solenoid valve 11 installed above it. The second solenoid valve 11 is connected to the controller. One end of the exhaust gas discharge pipe 10 is connected to the exhaust gas discharge point at the kiln outlet, and the other end is connected to the exhaust gas treatment device 12. The second solenoid valve 11 and the controller work together to control the timing of exhaust gas treatment. At the same time, the second solenoid valve 11 and the first solenoid valve 6 are both controlled by the controller to form a staggered operation and avoid airflow interference.

[0044] The exhaust gas at the kiln outlet contains silane, acetylene, hydrogen, nitrogen, carbon monoxide, carbon dioxide, particulate matter, etc. The main components of the exhaust gas are combustible gases, and the main process is incineration. Since the exhaust gas contains silane, combustion will produce particulate matter. Therefore, the exhaust gas treatment device 12 adopts a horizontal TO direct-fired incinerator, and the end is filtered by a bag filter before being discharged.

[0045] The exhaust gas treatment unit adopts time-series coordinated control to simultaneously recover waste gas and unreacted raw material gas, which reduces harmful emissions and realizes the recycling of raw materials.

[0046] The filtration unit is filter element 13, which is installed on the material flow path at the kiln outlet through the filter element flange. It is connected to the spray range of the back-blowing nozzle 1, the inlet of the funnel 7, and the interface of the exhaust pipe 10 to achieve material processing, that is, to realize material filtration and multi-unit collaborative control.

[0047] The filtration unit forms a physical barrier through a high-precision filter element, strictly controlling the amount of material overflow. Combined with the self-cleaning effect of the backflushing airflow, it maintains filtration efficiency and improves product yield from the source.

[0048] In some embodiments, the filter element 13 has a temperature tolerance of -30℃ to 700℃, a filtration accuracy of less than 1 micrometer, and the outer surface of the filter element is opposite to the spray direction of the backflush nozzle 1. The filter element surface can be self-cleaned by the backflush airflow, while the internal pressure of the kiln can be regulated.

[0049] This device, through multi-unit collaborative optimization, not only balances the airflow distribution inside the kiln but also achieves closed-loop control throughout the entire process of "pressure stabilization - impurity removal - tail gas treatment - material management." The units are interconnected via connectors, yet they do not affect each other. The backflushing unit only acts on the filtration unit. The tail gas discharged from the filtration unit is treated by the tail gas treatment device, while the resulting solid and liquid impurities are collected by a one-way valve in the impurity collection unit, thus preventing impurity backflow. Practical application verification has shown that product quality and production efficiency are effectively improved, and overall production costs are significantly reduced.

[0050] The working principle of a kiln backflushing system for preparing silicon-carbon anode materials based on vapor deposition is as follows: The backflush nozzle 1 of the backflush unit is installed in a closed-loop coordinated system at the kiln outlet. The gas source 14 is a high-purity inert gas source. After heating, it is stored in the gas storage device 3 and then delivered to the backflush nozzle 1 through the gas connection pipe. A solenoid valve 6 is connected in series in the gas pipeline. This solenoid valve and the pressure gauge 15 are controlled by PLC signals. The pressure reducing valve 2 stabilizes the backflush gas pressure at 0.1-0.5MPa to ensure stable pressure inside the kiln.

[0051] The upper opening of the funnel 7 of the impurity collection unit is sealed to the outside of the kiln outlet, and the lower opening is connected to the collection section 8 through a pipe. A one-way valve 9 is installed on the pipe connecting the collection funnel and the collection section 8. When solid and liquid impurities are generated during kiln operation, the impurities enter the collection funnel 7 under the action of airflow, and then enter the collection bag through the one-way valve 9. The one-way valve effectively prevents the impurities from flowing back.

[0052] One end of the exhaust gas discharge pipe of the exhaust gas collection and treatment unit is connected to the exhaust gas discharge point at the kiln outlet, and the other end is connected to the exhaust gas treatment device. A second solenoid valve is installed on the exhaust gas discharge pipe, which is connected to a PLC system, controlling its opening and closing sequence. To avoid interference with the airflow of the backflushing unit, the second solenoid valve 11 of the exhaust gas treatment unit and the first solenoid valve 6 of the backflushing unit operate in a staggered, coordinated manner. That is, after the backflushing unit stops backflushing, the PLC system controls the second solenoid valve 11 of the exhaust gas treatment unit to open and recover the exhaust gas. Once recovery is complete, the second solenoid valve 11 closes. In other words, the backflushing unit and the exhaust gas treatment unit do not operate simultaneously.

[0053] The filter element 13 of the filter unit is integrated into the material flow path at the kiln outlet. The outer surface of the filter element is opposite to the spray range of the backflush nozzle 1. When the backflush unit is working, the backflush airflow cleans the surface of the filter element, maintains the filtration efficiency, and at the same time helps to regulate the internal pressure of the kiln.

[0054] In actual operation, all units work together. The backflushing unit maintains stable pressure and achieves backflushing cleaning, the impurity collection unit collects impurities, the exhaust gas collection and treatment unit recovers exhaust gas, and the filtration unit controls materials. Together, they achieve efficient and environmentally friendly operation of the kiln. The solution proposed in this application effectively solves the core problems of low product yield caused by pressure fluctuations and airflow turbulence during kiln operation, as well as secondary pollution caused by impurity accumulation and exhaust gas leakage.

[0055] It should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition, characterized in that: include The filter unit is installed on the material channel at the kiln outlet to control material overflow. The backflush unit includes a No. 1 solenoid valve and a backflush nozzle with the spray direction opposite to the filter unit. The No. 1 solenoid valve is connected to the controller so that the No. 1 solenoid valve and the backflush nozzle cooperate to perform pulse backflush on the filter unit. Impurity collection unit, used for the directional collection of impurities from the kiln outlet; The exhaust gas treatment unit includes an exhaust gas treatment device and a second solenoid valve. The second solenoid valve is controlled by a controller and its timing is coordinated with that of the backflushing unit to avoid peak conditions.

2. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The backflush unit includes a backflush nozzle, a gas storage device, a gas delivery pump, and a gas heater connected in sequence by pipelines. The gas heater is connected to a gas source. A pressure reducing valve is installed at the outlet of the gas storage device. A solenoid valve and a pressure gauge are installed on the pipeline between the pressure reducing valve and the backflush nozzle. The pressure gauge signal is connected to the controller. The backflush nozzle is installed at the kiln outlet.

3. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 2, characterized in that: The pressure reducing valve is a high-temperature resistant pressure reducing valve with a maximum temperature tolerance of 450℃ and an output pressure of 0-25psig.

4. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 2, characterized in that: The maximum heating temperature of the gas heater is 850°C.

5. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 2, characterized in that: Both solenoid valve No. 1 and solenoid valve No. 2 are high-temperature resistant solenoid valves with a maximum withstand temperature of 1150℃.

6. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 2, characterized in that: The gas source is a high-purity inert gas.

7. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The controller is either a PLC set up separately for this system or an external central control room.

8. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The backflush nozzle has a backflush angle range of 20°-80° and a backflush distance of ≤1m.

9. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 2, characterized in that: The gas storage device has a cavity structure, and the cross-sectional area of ​​the cavity is larger than the cross-sectional area of ​​the pipeline. A spare gas outlet and a spare gas inlet are also provided on one side of the cavity.

10. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The impurity collection unit includes a funnel, a collection section, and a one-way valve. The upper opening of the funnel is sealed to the outside of the kiln outlet, and the lower opening is connected to the collection section through the one-way valve, forming a directional collection channel for impurities.

11. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 10, characterized in that: The collection section is a collection bag or a collection box.

12. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The exhaust gas treatment unit also includes an exhaust gas discharge pipe, a No. 2 solenoid valve installed above the exhaust gas discharge pipe, one end of the exhaust gas discharge pipe is connected to the exhaust gas discharge point at the kiln outlet, and the other end is connected to the exhaust gas treatment device.

13. The kiln backflushing system for the production of silicon-carbon negative electrode material by vapor deposition according to claim 12, characterized in that The exhaust gas treatment device adopts a horizontal TO direct-fired incinerator, and the gas is discharged after being filtered by a bag filter at the end.

14. The kiln back-blowing system for preparing silicon-carbon negative electrode material based on vapor deposition according to claim 1, characterized in that: The filtration unit is a filter element, which is installed on the material flow path at the kiln outlet via a filter element flange. It is connected to the spray range of the back-flushing nozzle, the inlet of the funnel, and the interface of the exhaust pipe to achieve joint material processing.

15. The kiln backflushing system for the production of silicon-carbon negative electrode material by vapor deposition according to claim 14, characterized in that The filter element can withstand temperatures from -30℃ to 700℃, and its filtration accuracy is less than 1 micron.

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