A processing equipment for valves and semiconductor devices

Abstract

This utility model provides a valve and a semiconductor device processing device. The valve includes: a body having a valve cavity inside, wherein a first end of the valve cavity has a corrosive gas inlet and a second end has a corrosive gas outlet; a valve plate having a sealing ring on the side facing the corrosive gas inlet for closing the valve when the corrosive gas inlet is pressed and opening the valve when the valve plate is removed from the corrosive gas inlet; and a jet nozzle for spraying protective gas into the area where the sealing ring is located when the valve plate is removed from the corrosive gas inlet.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a valve and a semiconductor device processing equipment. Background Technology

[0002] Ultra-low dielectric constant thin films are core insulating materials in advanced integrated circuit manufacturing, widely used in the fabrication of interlayer insulating structures for chips. Their film formation process typically relies on plasma-enhanced chemical vapor deposition (PECVD) for precise control. In the production process of ultra-low dielectric constant thin films, the cleaning pipeline plays a crucial role in cleaning the reaction chamber and removing impurities. The valves within the cleaning pipeline are core hardware components for controlling the flow of process gases and ensuring stable media delivery. To ensure effective chamber cleaning, the industry commonly employs remote plasma sources to generate plasma for cleaning. During this process, the remote plasma source simultaneously generates highly chemically active fluoride and oxygen ions, accompanied by a localized high-temperature environment. These factors combine to create harsh operating conditions for the valves in the cleaning pipeline, placing extremely high demands on the performance of key valve components.

[0003] In the structural design of existing cleaning pipeline valves, the rubber ring is the core sealing element that ensures the valve's sealing performance. Its sealing reliability directly determines whether the process gas in the pipeline leaks and whether the overall process is stable. However, the rubber ring materials currently used in valves are generally unable to withstand the chemical corrosion caused by the highly chemically active fluoride and oxygen ions generated by remote plasma sources, and are also unable to withstand the localized high-temperature environment formed during the cleaning process, resulting in a significant reduction in the service life of the rubber ring.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a valve technology to improve the service life of the rubber ring in the thin film deposition process, so as to reduce the difficulty of rubber ring selection and improve the continuity and stability of the thin film deposition process. Utility Model Content

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] In order to overcome the above-mentioned defects in the prior art, this utility model provides a valve and a semiconductor device processing equipment to improve the service life of the rubber ring in the thin film deposition process, thereby reducing the difficulty of rubber ring selection and improving the continuity and stability of the thin film deposition process.

[0007] Specifically, the valve provided according to the first aspect of this utility model includes: a body having a valve cavity inside, wherein a first end of the valve cavity has a corrosive gas inlet and a second end has a corrosive gas outlet; a valve plate having a sealing ring on the side facing the corrosive gas inlet for closing the valve when the corrosive gas inlet is pressed and opening the valve when it is removed from the corrosive gas inlet; and a jet nozzle for spraying protective gas into the area where the sealing ring is located when the valve plate is removed from the corrosive gas inlet.

[0008] Furthermore, in some embodiments of this utility model, the valve plate involves a closed valve position that presses against the corrosive gas inlet and an open valve position that is disconnected from the corrosive gas inlet. The jet nozzle is disposed on the body and located between the corrosive gas inlet and the open valve position, and is used to spray the protective gas between the corrosive gas inlet and the open valve position when the valve plate is in the open valve position.

[0009] Furthermore, in some embodiments of this utility model, the first axial direction of the corrosive gas inlet is perpendicular to the second axial direction of the corrosive gas outlet. The corrosive gas enters the valve chamber along the first axial direction and exits the valve chamber along the second axial direction. The valve plate is displaced along the first axial direction to switch between the valve-closed position and the valve-open position. The jet nozzle sprays the protective gas in a third direction perpendicular to the first axial direction to suppress the diffusion of the corrosive gas along the first axial direction.

[0010] Furthermore, in some embodiments of this utility model, the valve includes a plurality of jet ports, each of which is distributed around the first axis direction on the body and jets the protective gas in a plurality of third directions perpendicular to the first axis direction.

[0011] Furthermore, in some embodiments of this utility model, the jet nozzle is disposed on the valve plate and faces the corrosive gas inlet, and is used to spray the protective gas into the corrosive gas inlet as the valve plate moves away from the corrosive gas inlet, so as to suppress the diffusion of the corrosive gas along the first axial direction of the corrosive gas inlet.

[0012] Furthermore, in some embodiments of this utility model, the valve includes a plurality of jet nozzles, each of which is surrounded by the sealing ring and is deflected toward the first axis of the corrosive gas inlet, so that the protective gas jetted therefrom forms a conical protective area on the side of the sealing ring facing the corrosive gas inlet.

[0013] Furthermore, in some embodiments of this utility model, the valve further includes: an air inlet pipe and a drive mechanism integrated into the valve plate, wherein a first end of the air inlet pipe is connected to the jet port, and a second end extends out of the valve cavity via the drive mechanism to connect to a protective air source.

[0014] Furthermore, in some embodiments of this utility model, the valve further includes: a drive mechanism connected to the valve plate to drive it to press against the corrosive gas inlet or to disconnect from the corrosive gas inlet.

[0015] Furthermore, in some embodiments of this invention, the corrosive gas includes plasma carrying fluoride ions and / or oxygen ions, and the protective gas includes argon, wherein the flow ratio of the corrosive gas to the protective gas is not less than 20:1.

[0016] Furthermore, the semiconductor device processing equipment provided according to the second aspect of the present invention includes: a process chamber for accommodating the semiconductor device to be processed; an RPS module connected to the process chamber via a pipeline for providing remote plasma to the process chamber for processing the semiconductor device and / or cleaning the process chamber; and a valve as described in any one of the first aspects of the present invention, disposed in the pipeline between the process chamber and the RPS module. Attached Figure Description

[0017] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1A A schematic diagram of the valve in an open state according to some embodiments of the present invention is shown.

[0019] Figure 1B A schematic diagram of the valve in a closed state according to some embodiments of the present invention is shown.

[0020] Figure 2A A side view of a valve provided according to some embodiments of the present invention is shown.

[0021] Figure 2B A cross-sectional view of a valve provided according to some embodiments of the present invention is shown.

[0022] Figure 3 A schematic diagram of the structure of a protective gas inlet valve according to some embodiments of the present invention is shown.

[0023] Figure label:

[0024] 10 body

[0025] 11 Entrances

[0026] 12 Exports

[0027] 20 Valve Plate

[0028] 21 Sealing ring

[0029] 30 Drive mechanism

[0030] 31. Intake pipe

[0031] 40 jet nozzles Detailed Implementation

[0032] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.

[0033] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0034] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.

[0035] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of this utility model.

[0036] As mentioned above, ultra-low dielectric constant thin films are core insulating materials in advanced integrated circuit manufacturing, widely used in the fabrication of interlayer insulating structures for chips. Their film formation process typically relies on plasma-enhanced chemical vapor deposition (PECVD) for precise control. In the production process of ultra-low dielectric constant thin films, the cleaning pipeline plays a crucial role in cleaning the reaction chamber and removing impurities. The valves within the cleaning pipeline are core hardware components for controlling the flow of process gases and ensuring stable media delivery. To ensure effective chamber cleaning, the industry commonly employs remote plasma sources to generate plasma for cleaning. During this process, the remote plasma source simultaneously generates highly chemically active fluoride and oxygen ions, accompanied by a localized high-temperature environment. These factors collectively constitute the stringent operating conditions for the valves in the cleaning pipeline, placing extremely high demands on the performance of key valve components.

[0037] In the structural design of existing cleaning pipeline valves, the rubber ring is the core sealing element that ensures the valve's sealing performance. Its sealing reliability directly determines whether the process gas in the pipeline leaks and whether the overall process is stable. However, the rubber ring materials currently used in valves are generally unable to withstand the chemical corrosion caused by the highly chemically active fluoride and oxygen ions generated by remote plasma sources, and are also unable to withstand the localized high-temperature environment formed during the cleaning process, resulting in a significant reduction in the service life of the rubber ring.

[0038] In order to overcome the above-mentioned defects in the prior art, this utility model provides a valve and a semiconductor device processing equipment to improve the service life of the rubber ring in the thin film deposition process, thereby reducing the difficulty of rubber ring selection and improving the continuity and stability of the thin film deposition process.

[0039] In some non-limiting embodiments, the valve provided in the first aspect of the present invention can be configured in the semiconductor device processing equipment provided in the second aspect of the present invention.

[0040] Specifically, the semiconductor device processing equipment includes a process chamber, an RPS module, and a valve. The process chamber houses the semiconductor device to be processed. The RPS module is connected to the process chamber via piping and provides remote plasma to the process chamber for processing the semiconductor device and / or cleaning the process chamber. The valve is located in the piping between the process chamber and the RPS module.

[0041] Please refer to Figures 1A-1B , Figure 1A A schematic diagram of the valve in an open state according to some embodiments of the present invention is shown. Figure 1B A schematic diagram of the valve in a closed state according to some embodiments of the present invention is shown.

[0042] like Figures 1A-1B As shown, the valve may include a body 10, a valve plate 20, and a jet nozzle 40. The body 10 has a valve cavity inside. A corrosive gas inlet 11 is located at the first end of the valve cavity, and a corrosive gas outlet 12 is located at the second end. A sealing ring 21 is provided on the side of the valve plate 20 facing the corrosive gas inlet 11, used to close the valve when the corrosive gas inlet 11 is compressed and to open the valve when it is disengaged from the corrosive gas inlet 11. The jet nozzle 40 sprays protective gas into the area where the sealing ring 21 is located when the valve plate 20 is disengaged from the corrosive gas inlet 11.

[0043] This application adds an external inert gas inlet structure to the valve body 10. During the cleaning process and valve opening, an inert gas, such as argon, is introduced into the valve to form a protective gas curtain. This protective gas curtain creates a physical barrier in front of the rubber ring, directly blocking corrosive substances such as fluoride ions and oxygen ions generated by the remote plasma source from directly impacting the rubber ring and preventing chemical corrosion. Simultaneously, the mixture of inert gas and the gas from the remote plasma source effectively reduces the internal temperature of the valve, mitigating thermal damage to the rubber ring caused by the high-temperature environment.

[0044] In some embodiments, the valve plate 20 relates to a closed valve position that presses against the corrosive gas inlet 11 and an open valve position that disconnects from the corrosive gas inlet 11. The jet nozzle 40 is provided on the body 10 and located between the corrosive gas inlet 11 and the open valve position, and is used to spray protective gas between the corrosive gas inlet 11 and the open valve position when the valve plate 20 is in the open valve position.

[0045] Furthermore, the first axial direction of the corrosive gas inlet 11 is perpendicular to the second axial direction of the corrosive gas outlet 12. The corrosive gas enters the valve chamber along the first axial direction and exits the valve chamber along the second axial direction. The valve plate 20 is displaced along the first axial direction to switch between the valve closed position and the valve open position. The jet nozzle 40 injects protective gas in a third direction perpendicular to the first axial direction to suppress the diffusion of the corrosive gas along the first axial direction.

[0046] Furthermore, the valve includes multiple jet ports 40, each jet port 40 being distributed around the first axis direction on the body 10, and injecting protective gas in multiple third directions perpendicular to the first axis direction.

[0047] Please refer to Figures 2A-2B and Figure 3 , Figure 2A A side view of a valve provided according to some embodiments of the present invention is shown. Figure 2B A cross-sectional view of a valve provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of the structure of a protective gas inlet valve according to some embodiments of the present invention is shown.

[0048] like Figures 2A-2B and Figure 3 As shown, the jet nozzle 40 is located on the valve plate 20 and faces the corrosive gas inlet 11. It is used to spray protective gas into the corrosive gas inlet 11 as the valve plate 20 disengages from it, thereby suppressing the diffusion of corrosive gas along the first axial direction of the corrosive gas inlet 11. Here, the jet nozzle 40 can spray gas as soon as it disengages from the valve plate 20, effectively preventing corrosive gas from contacting the sealing ring 21 at the moment the valve opens, thus improving its corrosion resistance.

[0049] Furthermore, the valve includes multiple jet nozzles 40, each surrounded by a sealing ring 21 and angled towards the first axis of the corrosive gas inlet 11. This allows the ejected protective gas to form a conical protective area on the side of the sealing ring 21 facing the corrosive gas inlet 11. Compared to a vertical air curtain formed by ejecting protective gas into the corrosive gas inlet 11, this conical protective area provides a stronger guiding effect for the corrosive gas, better directing it to the sidewall of the valve cavity to prevent it from contacting the sealing ring 21.

[0050] Furthermore, the valve also includes an air inlet pipe 31. The air inlet pipe 31 is integrated into the drive mechanism 30 of the valve plate 20. The first end of the air inlet pipe 31 is connected to the jet port 40, while its second end extends out of the valve chamber via the drive mechanism 30 to connect to a protective air source.

[0051] In some embodiments, the valve further includes an actuation mechanism 30 (e.g., a cylinder). The actuation mechanism 30 is connected to the valve plate 20 to actuate it to press against or disengage from the corrosive gas inlet 11.

[0052] In some embodiments, the corrosive gas may include plasma carrying fluoride ions and / or oxygen ions, and the protective gas may include argon. The flow ratio of the corrosive gas to the protective gas is not less than 20:1 to achieve a stronger protective effect.

[0053] In summary, the valve and semiconductor device processing equipment provided by this utility model can improve the service life of the rubber ring in the thin film deposition process, thereby reducing the difficulty of rubber ring selection and improving the continuity and stability of the thin film deposition process.

[0054] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0055] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A valve, characterized in that include: The body has a valve chamber inside, wherein a corrosive gas inlet is provided at the first end of the valve chamber and a corrosive gas outlet is provided at the second end. A valve plate, having a sealing ring on the side facing the corrosive gas inlet, is used to close the valve when the corrosive gas inlet is compressed, and to open the valve when it is disengaged from the corrosive gas inlet; and The jet nozzle sprays protective gas into the area where the sealing ring is located when the valve plate is disengaged from the corrosive gas inlet.

2. The valve of claim 1, wherein The valve plate relates to a closed valve position that presses against the corrosive gas inlet and an open valve position that disconnects from the corrosive gas inlet. The jet nozzle is located on the body and between the corrosive gas inlet and the valve opening position, and is used to spray the protective gas between the corrosive gas inlet and the valve opening position when the valve plate is in the valve opening position.

3. The valve of claim 2, wherein The first axial direction of the corrosive gas inlet is perpendicular to the second axial direction of the corrosive gas outlet. The corrosive gas enters the valve chamber along the first axial direction and exits the valve chamber along the second axial direction. The valve plate displaces along the first axial direction to switch between the valve closed position and the valve open position. The nozzle injects the protective gas in a third direction perpendicular to the first axis to suppress the diffusion of the corrosive gas along the first axis.

4. The valve of claim 3, wherein The valve includes a plurality of jet nozzles, each of which is distributed around the first axis on the body and jets the protective gas in a plurality of third directions perpendicular to the first axis.

5. The valve of claim 1, wherein The jet nozzle is located on the valve plate and faces the corrosive gas inlet. It is used to spray the protective gas into the corrosive gas inlet as the valve plate moves away from the corrosive gas inlet, so as to suppress the diffusion of the corrosive gas along the first axial direction of the corrosive gas inlet.

6. The valve of claim 5, wherein The valve includes multiple jet nozzles, each of which is surrounded by a sealing ring and is deflected toward the first axis of the corrosive gas inlet, so that the protective gas jetted from the valve forms a cone-shaped protective area on the side of the sealing ring facing the corrosive gas inlet.

7. The valve as described in claim 5, characterized in that, Also includes: An intake pipe is integrated into the drive mechanism of the valve plate, wherein a first end of the intake pipe is connected to the jet port, and a second end extends out of the valve chamber via the drive mechanism to connect to a customer air source.

8. The valve as claimed in claim 1, characterized in that, Also includes: A drive mechanism, connected to the valve plate, is used to drive it to press against the corrosive gas inlet or to disconnect from the corrosive gas inlet.

9. The valve as claimed in claim 1, characterized in that, The corrosive gas includes plasma carrying fluoride ions and / or oxygen ions, and the protective gas includes argon, wherein the flow ratio of the corrosive gas to the protective gas is not less than 20:

1.

10. A semiconductor device processing apparatus, characterized in that, include: Process chambers are used to house semiconductor devices to be processed; The RPS module is connected to the process chamber via piping and is used to provide remote plasma to the process chamber for processing the semiconductor device and / or cleaning the process chamber. as well as The valve as described in any one of claims 1 to 9, and the pipeline located between the process chamber and the RPS module.

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