A high-purity reagent delivery valve assembly for semiconductor manufacturing

Abstract

This utility model belongs to the technical field of integrated circuit manufacturing, and more specifically, it relates to an ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing. It includes an integral valve seat made of a material with good thermal conductivity to act as a uniform heat block. Two first channels are spaced apart on the valve seat. Two first valves are spaced apart on each first channel. The valve seat also has multiple connectors for connecting the inlet and outlet of the first channels to pipelines of external equipment. The valve seat also integrates a heating structure for heating precursor vapor, ensuring that all components in contact with the precursor, including the first channels, first valves, and connectors, are maintained at the required temperature, preventing condensation of the precursor vapor, and thus improving the utilization rate of the precursor.

Description

Technical Field

[0001] This utility model belongs to the technical field of integrated circuit manufacturing, and more specifically, it relates to an ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing. Background Technology

[0002] In semiconductor manufacturing, advanced packaging, and nanomaterial synthesis, vapor deposition is a core process for constructing functional thin films. The realization of these processes heavily relies on the precise and stable delivery of one or more specific chemical substances, known as "precursors," in vapor form into the reaction chamber. The precursor vapor undergoes a chemical reaction on the wafer or substrate surface, thereby depositing a thin film with specific electrical, mechanical, or chemical properties. Therefore, the quality of precursor vapor delivery directly determines the thickness uniformity, chemical composition, structural density, and step coverage of the deposited film, and is a critical prerequisite affecting the final device performance and production yield.

[0003] To achieve high-quality thin film deposition, the purity, pressure, and mass flow rate of precursor vapors must be strictly and precisely controlled. However, the saturated vapor pressure of most precursors (especially liquid and solid organometallic precursors) is extremely sensitive to temperature changes. When the temperature at any point in the delivery system is lower than the dew point temperature of the precursor at the current system pressure, vapors will condense on the inner walls of pipes, valves, joints, and other components.

[0004] When the precursor condenses, it forms tiny droplets. These droplets can further react with other precursors or reaction byproducts to form solid particles, which contaminate the ultrapure reagents and ultimately negatively affect the deposition of the thin film.

[0005] To address the aforementioned condensation problem, a combination of external active heating and passive insulation is commonly used in the field. This involves applying an external heat source (such as a heating cable or circulating fluid heat tracing jacket) along the entire precursor vapor transport path, supplemented by insulation material, to maintain the system temperature above the dew point.

[0006] However, existing temperature control solutions still have obvious limitations, such as difficulty in ensuring temperature uniformity: complex delivery pipelines, especially in valves, filters and joints, are prone to forming "cold spots" that become sources of local condensation; and although high-precision fluid heat tracing systems have good temperature control effects, they are complex, costly and energy-intensive, and are not the best choice for all application scenarios. Utility Model Content

[0007] Therefore, it is necessary to provide an ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing to address the above problems.

[0008] This application provides an ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing, including a valve seat, a first channel provided in the valve seat, the first channel being used to connect to a pipeline of an external device, a first valve being provided on the first channel, a connector for connecting the first channel to the external device, and a heating structure for heating precursor vapor, the connector being provided at both ends of the first channel.

[0009] Optionally, the valve seat is provided with a plurality of first channels, which are arranged in parallel and spaced apart, and each first channel is provided with two first valves at intervals.

[0010] Optionally, the heating structure includes a main heating channel, the axis of which is parallel to the axis of the first channel, and the main heating channel is used to contain the heating medium.

[0011] Optionally, multiple main heating channels are provided, and several main heating channels are arranged around the first channel.

[0012] Optionally, the heating structure further includes a secondary heating channel, which is used to connect several main heating channels and to connect the main heating channels to an external heat source. The valve seat has an opening that communicates with the secondary heating channel.

[0013] Optionally, multiple auxiliary heating channels are provided, and the multiple auxiliary heating channels are arranged in parallel between several main heating channels.

[0014] Optionally, the valve seat is provided with two first channels, and a second channel is connected between the two first channels, and a second valve is provided on the second channel.

[0015] Optionally, two first valves are provided at intervals on each of the first channels, and the connection point between the second channel and the first channel is located between the two first valves.

[0016] Optionally, the heating medium is a high-temperature liquid or a high-temperature gas.

[0017] Optionally, the main heating channel is provided with an electric heating wire.

[0018] Compared with the prior art, the technical solution provided in this application has the following advantages: The aforementioned ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing solves the condensation problem during precursor vapor delivery. By employing an integrated valve seat and utilizing a thermally conductive material to act as a uniform heat source, the heating structure and fluid delivery channel are integrated. Specifically, a first channel and connector are installed within the valve seat, and in conjunction with the internal heating structure, all components in direct contact with the precursor, including the first channel, the first valve, and the connector, are maintained at the required process temperature. This integrated heating method eliminates the "cold spots" that easily occur at valves or joints in traditional external heating solutions, effectively preventing condensation of precursor vapor due to localized temperature drops. This prevents the formation of tiny droplets or solid particles, ultimately significantly improving precursor utilization and ensuring the quality of semiconductor thin film deposition. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of this utility model; Figure 2 This is the front view of this utility model; Figure 3 yes Figure 2 AA section view in the middle; Figure 4 This is the left view of this utility model; Figure 5 yes Figure 4 BB section view in the middle; Figure 6 yes Figure 4 CC section view in the image.

[0020] In the diagram: 1. Valve seat; 2. First channel; 3. First valve; 4. Connector; 5. Second channel; 6. Second valve; 7. Main heating channel; 8. Secondary heating channel; 9. Opening. Detailed Implementation

[0021] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0022] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, unless otherwise explicitly specified.

[0024] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0025] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0026] See Figures 1 to 3 An embodiment of this utility model provides an ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing, including a valve seat 1, a first channel 2 provided in the valve seat 1, the first channel 2 being a pipeline for connecting external equipment, a first valve 3 provided on the first channel 2, a connector 4 for connecting the first channel 2 and the external equipment, and a heating structure for heating precursor vapor, with the connector 4 located at both ends of the first channel 2.

[0027] The core of this embodiment lies in solving the condensation problem during precursor vapor transport. By employing an integral valve seat 1 and utilizing a material with good thermal conductivity to act as a uniform heat block, the heating structure and fluid transport channel are integrated. Specifically, a first channel 2 and a connector 4 are set inside the valve seat 1, and in conjunction with the internal heating structure, it can be ensured that all components in direct contact with the precursor, such as the first channel 2, the first valve 3, and the connector 4, are maintained at the required process temperature. This integrated heating method eliminates the "cold spots" that easily appear at valves or joints in traditional external heating solutions, thereby effectively preventing condensation of precursor vapor due to local temperature drops, preventing the formation of tiny droplets or solid particles, and ultimately significantly improving the utilization rate of the precursor and ensuring the quality of semiconductor thin film deposition.

[0028] See Figures 1 to 3 In one embodiment, the valve seat 1 is provided with a plurality of first channels 2, which are arranged in parallel and spaced apart. Each first channel 2 is provided with two first valves 3 spaced apart. By arranging a plurality of first channels 2 in parallel and spaced apart within the valve seat 1, this embodiment allows the valve assembly to simultaneously process or transport multiple reagents within a compact module, adapting to the complex process requirements in semiconductor manufacturing. More importantly, the two first valves 3 spaced apart on each first channel 2 not only enable more precise on / off control of the fluid within the channel but also provide the necessary structural foundation for subsequent flow path isolation or segmented control, ensuring the safety and controllability of the fluid transport process.

[0029] See Figures 3 to 5 In one embodiment, the heating structure includes a main heating channel 7, the axis of which is parallel to the axis of the first channel 2. The main heating channel 7 is used to contain the heating medium. In this embodiment, the heating structure employs a main heating channel 7 with its axis parallel to the first channel 2 to contain the heating medium. This parallel arrangement ensures that the heat source can achieve linear and uniform heat transfer along the fluid transport path. Compared to point-like or irregular heating methods, the parallel channel design minimizes the temperature gradient along the entire length of the first channel 2, thereby maintaining a constant temperature environment during long-distance transport and further reducing the risk of condensation on the inner wall of the pipeline.

[0030] In one embodiment, multiple main heating channels 7 are provided, with several main heating channels 7 arranged around the first channel 2. This embodiment, by providing multiple main heating channels 7 and distributing them around the first channel 2, creates a comprehensive thermal enclosure around the first channel 2. This surrounding layout eliminates radial temperature differences that may be caused by a single heat source, ensuring uniform pipe wall temperature in all directions of the first channel 2 cross-section, thereby forming a highly uniform temperature field and maximizing the thermal stability of the precursor vapor as it passes through the valve body.

[0031] Regarding the uniform temperature structure based on an integral heat block, the core design of the above embodiments lies not only in heating, but also in constructing a "thermal field" without dead zones. In the prior art, pipe fittings and valve bodies are usually separate components connected by pipes. This often results in the fittings becoming "cold spots" because they are difficult to completely enclose with external heating elements, thus inducing precursor condensation. This solution breaks this separate model by using a material with good thermal conductivity (such as aluminum alloy or stainless steel) to manufacture the integral valve seat 1, making it directly act as a huge uniform heat block.

[0032] The above-described embodiments integrate the "connector 4" for connecting external pipelines directly into the valve seat 1, making it part of the heat block. This means that the connection point, which is traditionally the easiest to dissipate heat, now receives stable heat directly from the valve seat 1 body through heat conduction. Furthermore, to ensure absolute heat uniformity, the heating structure (main heating channel 7) adopts a layout that "surrounds" the first channel 2. This surrounding design forms an isothermal protective layer around the first channel 2, eliminating the radial temperature gradient that may occur with unidirectional heating. Combined with the internal circulation loop design connecting the main heating channel 7 and the auxiliary heating channel 8, the heat source (such as high-temperature oil) can form a turbulent circulation within the valve body, avoiding localized temperature differences in the heating medium itself. This deep structural integration completely eliminates thermal blockage caused by component splicing at the physical level, which is crucial for ensuring process stability, especially for the transport of organometallic precursors whose saturated vapor pressure is extremely sensitive to temperature.

[0033] See Figures 3 to 6 In one embodiment, the heating structure further includes a secondary heating channel 8, which connects several main heating channels 7 and connects the main heating channels 7 to an external heat source. The valve seat 1 has an opening 9 communicating with the secondary heating channel 8. This embodiment forms a highly efficient internal heat circulation loop. The secondary heating channel 8 connects several main heating channels 7 to each other, and together with the opening 9 on the valve seat 1 connecting to the external heat source, it constitutes a complete fluid circulation system. This design allows the heating fluid to flow smoothly inside the valve seat 1, continuously bringing in heat from the external heat source and evenly distributing it to each main heating channel 7, ensuring the dynamic balance and rapid response of the entire valve seat 1's heat block temperature.

[0034] See Figure 5In one embodiment, multiple secondary heating channels 8 are provided, and these channels 8 are arranged in parallel between several main heating channels 7. This embodiment further optimizes the distribution performance of the heat transfer fluid. By arranging multiple secondary heating channels 8 in parallel between the main heating channels 7, the resistance to the flow of the heating medium inside the valve seat 1 is effectively reduced, and the flow distribution of the fluid is improved. This multi-channel parallel network design helps to eliminate heating dead zones, ensuring that the heat transfer fluid can fill the entire heating structure more quickly and evenly, thereby improving the overall temperature control efficiency and temperature uniformity.

[0035] See Figures 3 to 6 In one embodiment, the valve seat 1 has two first channels 2, and a second channel 5 connects the two first channels 2. A second valve 6 is installed on the second channel 5. This embodiment connects the two first channels 2 to the second channel 5 and installs the second valve 6, breaking the limitation of independent transport in each channel. By controlling the opening and closing of the second valve 6, a lateral connection can be established between the two parallel first channels 2. This provides a physical path for the mixing, diversion, or cross-channel transport of fluids, greatly expanding the application scenarios of the valve assembly in complex processes.

[0036] See Figure 6 In one embodiment, two first valves 3 are spaced apart on each first channel 2, and the connection point between the second channel 5 and the first channel 2 is located between the two first valves 3. This embodiment implements advanced flow path logic control functions. Because the connection point between the second channel 5 and the first channel 2 is precisely designed between the two first valves 3, this specific topology allows for various fluid control modes to be achieved through different combinations of valve switching. Specifically, it can achieve fluid flow direction switching, isolation of specific sections (such as pipe sections before and after the connection point), or fluid bypass functionality. This highly flexible operating mode is crucial for semiconductor vapor deposition processes that require precise control of the introduction, purging, and discharge of reaction precursors.

[0037] Regarding the bypass flow path logic based on the second channel 5, this embodiment actually constructs a fluid distribution manifold within the valve group, greatly simplifying the gas path board design of the semiconductor equipment. This embodiment introduces the second channel 5 between two parallel first channels 2, and a key feature is that the connection point between the second channel 5 and the first channel 2 is located between two first valves 3. This topology has specific applications in semiconductor vapor deposition processes (such as ALD or CVD). For example, in the "stabilization" stage before the process begins, the precursor source needs to flow through the pipeline to achieve stable flow and pressure, but it cannot enter the reaction chamber at this time. Using this structure, the downstream first valve 3 (leading to the chamber) can be closed, while the upstream first valve 3 and the intermediate second valve 6 can be opened, allowing the precursor to enter the bypass pipeline or exhaust gas system through the second channel 5, thereby achieving pre-flow stabilization of the source. Conversely, when pipeline cleaning is required, purge gas can be introduced, and by controlling the opening and closing combination of these three valves, the purge gas can be forced to flow through the previously potentially existing "dead volume" region. Compared to the traditional method of building complex valve assemblies through external pipelines, this design, which integrates valves within the same valve seat 1, greatly reduces the number of pipeline connection points. This directly reduces the risk of leakage from expensive precursors and the dead volume of the system, significantly improving the response speed of fluid control and the airtightness and reliability of the system.

[0038] In one embodiment, the heating medium is a high-temperature liquid or a high-temperature gas. This embodiment provides a highly efficient heat exchange scheme based on a fluid medium. By using a high-temperature liquid or gas (such as hot oil or steam) as the heating medium, stable heat transfer can be achieved by utilizing the high specific heat capacity of the fluid. This method facilitates the adjustment of the medium temperature through an external, precise temperature control unit, thereby achieving precise control of the valve seat 1 temperature, and is particularly suitable for the conveying and insulation of precursor materials with extremely high temperature sensitivity.

[0039] In one embodiment, an electric heating wire is installed within the main heating channel 7. This embodiment provides a compact and easily controllable electric heating solution. Installing an electric heating wire within the main heating channel 7 and connecting it to an external temperature control power supply via leads not only simplifies the piping connections of the heating system and avoids the risk of liquid leakage, but also allows for rapid temperature regulation by adjusting the current. This solution makes the external interface of the valve assembly simpler, facilitating installation and maintenance within the space-constrained semiconductor equipment compartment.

[0040] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0041] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A high-purity reagent delivery valve assembly for semiconductor manufacturing, comprising a valve seat (1), characterized in that, The valve seat (1) is provided with a first channel (2), which is used to connect the pipeline of the external equipment. A first valve (3) is provided on the first channel (2). The valve seat (1) is also provided with a connector (4) for connecting the first channel (2) and the external equipment, as well as a heating structure for heating the precursor steam. The connector (4) is provided at both ends of the first channel (2).

2. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 1, characterized in that, The valve seat (1) is provided with a plurality of first channels (2), the plurality of first channels (2) are arranged in parallel and spaced apart, and two first valves (3) are arranged at intervals on each first channel (2).

3. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 2, characterized in that, The heating structure includes a main heating channel (7), the axis of which is parallel to the axis of the first channel (2), and the main heating channel (7) is used to contain the heating medium.

4. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 3, characterized in that, The main heating channel (7) is provided in multiple ways, and several of the main heating channels (7) are arranged around the first channel (2).

5. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 3, characterized in that, The heating structure also includes a secondary heating channel (8), which is used to connect several main heating channels (7) and to connect the main heating channels (7) to an external heat source. The valve seat (1) has an opening (9) that communicates with the secondary heating channel (8).

6. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 5, characterized in that, Multiple auxiliary heating channels (8) are provided, and the multiple auxiliary heating channels (8) are arranged in parallel between several main heating channels (7).

7. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 2, characterized in that, The valve seat (1) is provided with two first channels (2), and a second channel (5) is connected between the two first channels (2). A second valve (6) is provided on the second channel (5).

8. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 7, characterized in that, Two first valves (3) are provided at intervals on each of the first channels (2), and the connection point between the second channel (5) and the first channel (2) is located between the two first valves (3).

9. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 3, characterized in that, The heating medium is a high-temperature liquid or a high-temperature gas.

10. The ultra-clean high-purity reagent delivery valve assembly for semiconductor manufacturing according to claim 3, characterized in that, The main heating channel (7) is equipped with an electric heating wire.

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