A wafer warpage measurement device

Abstract

This invention relates to a wafer warpage measurement device, comprising a loading stage, a ring guide rail, and a warpage measurement component. The loading stage holds the wafer to be measured. The ring guide rail is arranged around the outer periphery of the loading stage. The warpage measurement component is movably connected to the ring guide rail via a slider assembly, allowing the component to move and be positioned along the guide rail to measure the height of the wafer's edge at different circumferential positions. This wafer warpage measurement device, by integrating a high-precision loading stage, a ring guide rail, and a positionable measurement component, effectively overcomes the shortcomings of poor repeatability and large errors in existing manual measurement methods, significantly improving the accuracy and repeatability of the measurement results. This technical solution makes the quantitative detection of wafer warpage more reliable, accurately screening wafers whose deformation exceeds the tolerance of subsequent equipment, thereby effectively preventing the risk of wafer breakage caused by excessive wafer warpage during automated transport or processing, ensuring the continuity of the production process and product yield.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, specifically to a wafer warpage measurement device. Background Technology

[0002] Wafer grinding and thinning is a crucial process in semiconductor manufacturing, primarily achieved through back-side grinding technology to reduce wafer thickness. The core value of this process lies in several aspects. First, it significantly optimizes the performance of integrated circuits, enabling chips to handle various complex computational tasks more efficiently during operation. Second, for packaging structures, thinner wafers better meet the miniaturization and lightweight requirements of modern electronic devices, thus providing more space and possibilities for innovative product design. In actual manufacturing, the benefits of reducing wafer thickness are multifaceted. On one hand, it improves chip heat dissipation efficiency, which is particularly important for high-performance chips, as good heat dissipation effectively prevents overheating failures during prolonged high-load operation, thereby extending chip lifespan. On the other hand, thinner wafers also reduce on-resistance, meaning that under the same current, chip power consumption is reduced, a significant advantage for products such as mobile devices that require high battery life. Furthermore, thinner wafers can reduce package size, which can greatly save space for complex systems that integrate multiple chips, improving the overall system integration and reliability. However, during the grinding and thinning process, the internal stress of the wafer is released, which can exacerbate wafer warpage. Wafer warpage refers to the shape deformation of the wafer caused by various factors during processing. If this deformation is too large, it can cause many problems for subsequent processes. For example, when the wafer warpage exceeds the processing capacity of the subsequent processing equipment, it may lead to abnormalities such as wafer breakage during processing. This not only wastes materials but also increases production costs and reduces production efficiency. Therefore, to ensure the smooth operation of the entire manufacturing process, wafer warpage measurement after grinding becomes an indispensable and necessary procedure.

[0003] Currently available wafer warpage measurement instruments on the market have several significant shortcomings. First, their operation is relatively cumbersome, requiring specialized technicians and a series of complex calibration and setup steps, undoubtedly increasing the difficulty and cost of use. Second, these instruments are typically expensive. Furthermore, wafer warpage measurement instruments themselves have specific warpage measurement requirements, meaning that the instrument's own errors and stability must be considered during the measurement process, further increasing the complexity and uncertainty of the measurement. Utility Model Content

[0004] In view of the problems existing in the prior art described above, this application provides a wafer warpage measurement device that can accurately measure wafer warpage and ensure safe operation.

[0005] To achieve the above and other related objectives, this utility model provides a wafer warpage measurement device, comprising:

[0006] Loading stage, used to place the wafer to be measured;

[0007] A ring-shaped guide rail is arranged around the outer periphery of the loading platform;

[0008] The warpage measurement component is movably connected to the annular guide rail via a slider assembly, allowing the warpage measurement component to move and be positioned along the annular guide rail to measure the height of the wafer edge at different circumferential positions.

[0009] Optionally, the warp measurement component includes:

[0010] A connecting block is mounted on the slider assembly;

[0011] A measuring ruler is set vertically on the connecting block, and the measuring ruler is marked with graduations;

[0012] The vernier assembly is movably mounted on the measuring scale. The vernier assembly and the measuring scale work together to move up and down along the measuring scale and measure the height of the edge of the wafer at different circumferential positions.

[0013] Optionally, the cursor component includes:

[0014] The vernier is movable up and down on the measuring scale;

[0015] The contact portion is located on the side of the vernier facing the center of the loading stage. The contact portion is used to make contact with the edge of the wafer during measurement.

[0016] Alternatively, the contact portion may be a needle tip, a hemispherical contact, or a flat contact block.

[0017] Alternatively, the measuring ruler may be a vernier caliper, dial caliper, or optical scale.

[0018] Optionally, the track plane of the annular guide rail is parallel to the working surface of the loading platform.

[0019] Optionally, the wafer warpage measurement device further includes: a first locking member, one end of which is disposed on the slider assembly and the other end of which is movably connected to the annular guide rail.

[0020] Optionally, the working surface of the loading platform is a circular working surface with a diameter ≥ 350 mm.

[0021] Optionally, the vernier has a second locking element inside, which is movably connected to the measuring scale.

[0022] As described above, the wafer warpage measurement device provided by this utility model has at least the following beneficial technical effects:

[0023] This invention relates to a wafer warpage measurement device, comprising a loading stage, a ring guide rail, and a warpage measurement component. The loading stage holds the wafer to be measured. The ring guide rail is arranged around the outer periphery of the loading stage. The warpage measurement component is movably connected to the ring guide rail via a slider assembly, allowing the component to move and be positioned along the guide rail to measure the height of the wafer's edge at different circumferential positions. This wafer warpage measurement device, by integrating a high-precision loading stage, a ring guide rail, and a positionable measurement component, effectively overcomes the shortcomings of poor repeatability and large errors in existing manual measurement methods, significantly improving the accuracy and repeatability of the measurement results. This technical solution makes the quantitative detection of wafer warpage more reliable, accurately screening wafers whose deformation exceeds the tolerance of subsequent equipment, thereby effectively preventing the risk of wafer breakage caused by excessive wafer warpage during automated transport or processing, ensuring the continuity of the production process and product yield. Furthermore, the device has a simplified structure, eliminating the need for expensive optical or electronic systems, and offers a significant advantage in cost-effectiveness while achieving accurate measurement. Attached Figure Description

[0024] Figure 1 The diagram shown is a structural schematic of the wafer warpage measurement device provided in an embodiment of this utility model.

[0025] Figure Labels

[0026] 1. Loading platform; 11. Circular guide rail; 2. Warp measurement assembly; 21. Connecting block; 22. Measuring ruler; 221. Vernier assembly; 2211. Vernier; 2212. Contact part; 3. Slider assembly; 31. First locking element; 4. Wafer. Detailed Implementation

[0027] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0028] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Although the illustrations only show components related to this utility model and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this utility model, and the layout of the components may also be more complex.

[0029] This embodiment provides a wafer warpage measurement device, referring to... Figure 1 It includes a loading platform 1, a ring guide rail 11, and a warp measurement assembly 2.

[0030] Reference Figure 1 The loading stage 1 is used to place the wafer 4 to be measured. The loading stage 1 is the reference plane for the entire wafer warp measurement device. Its core function is to provide a stable, level, and deformation-free support plane for the wafer 4 to be measured, ensuring that the wafer 4 will not generate additional errors during measurement due to instability or deformation of the support surface, thereby guaranteeing the accuracy and reliability of the measurement results. To ensure the reliability of the reference, the loading stage 1 in this embodiment is preferably made of natural marble or artificial granite. Materials such as natural marble and artificial granite have many excellent properties, such as low internal stress, meaning that the material will not deform due to uneven stress distribution; low coefficient of thermal expansion, allowing the loading stage 1 to maintain dimensional stability under different temperature environments and not be affected by temperature changes in its flatness; good rigidity, able to withstand large weights without bending or deformation; and strong corrosion resistance, resisting the erosion of various chemicals and extending the service life of the loading stage. After precision grinding, the loading stage 1 provides an ideal reference plane for the warp measurement of the wafer 4. This size design not only reliably supports the current industry mainstream 300mm diameter wafer 4, but also provides sufficient operating space around the loading stage 1. When wafer 4 is placed in the center of the loading stage 1, the potentially warped edges of wafer 4 can be completely suspended in the air without interfering with the working surface of the loading stage 1. If the edges of wafer 4 come into contact with or interfere with the working surface of the loading stage 1, it may lead to inaccurate measurement results or even damage to wafer 4. By ensuring the free suspension of the edges of wafer 4, an accurate reference can be provided for subsequent edge height measurements, thereby enabling precise measurement of the degree of wafer warpage.

[0031] Reference Figure 1The annular guide rail 11 is the motion guide mechanism of the wafer warp measurement device. It surrounds the outer periphery of the loading stage 1, providing a stable movement path and precise positioning for the warp measurement component 2. The design and installation accuracy of the annular guide rail 11 have a decisive impact on the performance of the entire wafer warp measurement device. Preferably, the track plane of the annular guide rail 11 is parallel to the working surface of the loading stage 1. Maintaining the parallelism between the track plane of the annular guide rail 11 and the working surface of the loading stage 1 is crucial to ensure the accuracy and reliability of the measurement results. This parallel relationship ensures that the warp measurement component 2 maintains a constant reference height while moving around the wafer 4. This not only makes all height measurement data accurate and effective but also provides good comparability, facilitating quantitative analysis of the degree of warp at different circumferential positions of the wafer 4. However, in actual installation and manufacturing processes, due to various factors such as machining errors, insufficient assembly precision, or deformation caused by environmental factors, the track plane of the annular guide rail 11 may not be parallel to the working surface of the loading stage 1. This deviation causes a change in the measurement reference height when the wafer warpage measurement device moves around wafer 4. Specifically, when the warpage measurement component 2 moves along the annular guide rail 11, the height of the contact point between the measurement component and the edge of wafer 4 changes due to the tilt of the track plane of the annular guide rail 11, thus introducing systematic errors. This systematic error directly affects the accuracy of the measurement results, making the measurement data unable to truly reflect the actual warpage of wafer 4, thereby affecting subsequent process decisions and quality control. To avoid this situation and ensure the accuracy and reliability of the wafer warpage measurement device, the parallelism of the annular guide rail 11 must be precisely calibrated after the device is assembled. This calibration process typically involves using high-precision measuring tools, such as a laser interferometer or a precision level, to detect the parallelism deviation between the track plane of the annular guide rail 11 and the working surface of the loading stage 1. Once a deviation is detected, it needs to be corrected by adjusting the support structure of the annular guide rail 11 or using precision adjusting shims until the track plane of the annular guide rail 11 and the working surface of the loading stage 1 achieve the required parallelism accuracy. This precise calibration effectively eliminates systematic errors, ensuring that the ring guide 11 maintains a stable and accurate guiding function throughout the measurement process, thus providing a reliable guarantee for the accurate measurement of wafer warpage.

[0032] Reference Figure 1The warpage measurement component 2 is the core component of the wafer warpage measurement device. It is movably connected to the annular guide rail 11 via a slider assembly 3, allowing it to move and be positioned along the rail to measure the height of the wafer 4's edge at different circumferential positions. The operator can push the slider assembly 3, causing it to slide smoothly along the annular guide rail 11, further driving the warpage measurement component 2 to slide smoothly along the same rail, thus positioning the measurement point at any angle on the circumference of the wafer 4. This design not only improves measurement flexibility but also significantly increases measurement efficiency. To fix the position after the measurement point is found, the slider assembly 3 is equipped with a first locking member 31. One end of the first locking member 31 is located on the slider assembly 3, and the other end is movably connected to the annular guide rail 11. The first locking element 31 is typically a screw or eccentric wrench structure. After the operator moves the slider assembly 3 to the desired position, the first locking element 31 can be tightened to securely lock the slider assembly 3 onto the annular guide rail 11, preventing the slider assembly 3 from sliding due to external force or vibration during measurement. This design effectively ensures the stability of the measurement process and the accuracy of the measurement results. The warp measurement assembly 2 includes a connecting block 21, a measuring scale 22, and a vernier 221. The connecting block 21 is mounted on the slider assembly 3. The measuring scale 22 is mounted vertically on the connecting block 21, forming a height reference scale for measurement. The measuring scale 22 is marked with graduations, which can be traditional vernier graduations, a more intuitive dial gauge, or a high-precision grating ruler to meet different levels of cost and accuracy requirements. The vernier assembly 221 is movably mounted on the measuring scale 22. The vernier assembly 221 and the measuring scale 22 cooperate with each other, allowing the vernier assembly 22 to move up and down along the measuring scale 22 and measure the height of the edge of the wafer 4 at different circumferential positions. Specifically, the vernier assembly 221 includes a vernier 2211 and a contact portion 2212. The vernier 2211, as the main body of the vernier assembly 221, is movably mounted on the measuring scale 22. To further improve measurement stability, a second locking element (not shown in the figure) is preferably provided inside the vernier 2211. When the vernier 2211 moves to the desired position, the operator can tighten the second locking element to lock the entire vernier assembly 221 in the current position, preventing the accuracy of the measurement result from being affected by the movement of the vernier 2211 during reading. The contact portion 2212 is located on the side of the vernier 2211 facing the center of the loading stage 1, and is used to contact the edge of the wafer 4 during measurement. The specific shape of the contact portion 2212 can be selected according to the characteristics of the wafer 4 being measured and the measurement specifications. In this embodiment, the contact portion 2211 is a needle tip, a hemispherical contact, or a planar contact block, etc.For example, using a needle-tip contact can achieve the smallest contact area, which is suitable for finding the precise location of the highest point; using a hemispherical contact can effectively avoid sharp contact points from scratching the edge of the wafer 4 or causing stress concentration while ensuring positioning accuracy; and using a planar contact block can provide more stable surface contact, which helps to average out the effects of micro-unevenness.

[0033] Reference Figure 1 To facilitate a further understanding of the working principle of the wafer warp measurement device in this embodiment, the working process of the wafer warp measurement device is described below. First, the wafer 4 is placed on the loading stage 1. Next, the operator pushes the slider assembly 3, causing the warp measurement assembly 2 to move along the annular guide rail 11 until the vernier assembly 221 reaches the maximum warp of the wafer 4. After reaching the predetermined position, the operator slides the vernier 2211 of the vernier assembly 221 to adjust its position so that the contact portion 2212 of the vernier assembly 221 precisely coincides with the edge of the maximum warp of the wafer 4. Finally, the operator reads the value of the corresponding position of the vernier 2211 on the measuring ruler 22 at this time, which is the maximum warp value of the wafer 4. The wafer warp measurement device of this embodiment achieves accurate measurement of wafer warp through its unique design and precise mechanical structure. Compared with traditional manual measurement methods, the wafer warp measurement device of this embodiment has significant advantages. First, the wafer warpage measurement device of this embodiment is inexpensive, simple in structure, and easy to operate and maintain, making it suitable for use in semiconductor manufacturing companies of all sizes. Second, through precise design and calibration of the mechanical structure, the wafer warpage measurement device of this embodiment can effectively reduce measurement result deviations caused by manual operation, greatly improving the accuracy of wafer warpage measurement results. Finally, the wafer warpage measurement device of this embodiment can accurately screen out wafers 4 whose deformation exceeds the tolerance of subsequent equipment, thereby effectively preventing the risk of wafer breakage caused by excessive warpage of wafer 4 during automated transfer or processing, ensuring the continuity of the production process and product yield.

[0034] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A wafer warpage measurement device, characterized in that, include: Loading stage, used to place the wafer to be measured; A ring-shaped guide rail is arranged around the outer periphery of the loading platform; The warpage measurement component is movably connected to the annular guide rail via a slider assembly, allowing the warpage measurement component to move and be positioned along the annular guide rail to measure the height of the wafer's edge at different circumferential positions.

2. The wafer warpage measurement device according to claim 1, characterized in that, The warpage measurement component includes: A connecting block is disposed on the slider assembly; A measuring ruler is mounted vertically on the connecting block, and the measuring ruler is marked with graduations. A vernier assembly is movably mounted on the measuring scale. The vernier assembly is in movable cooperation with the measuring scale and can move up and down along the measuring scale to measure the height of the edge of the wafer at different circumferential positions.

3. The wafer warpage measurement device according to claim 2, characterized in that, The cursor component includes: A vernier is movable up and down on the measuring scale; A contact portion is provided on the side of the vernier facing the center of the loading stage, and the contact portion is used to contact the edge of the wafer during measurement.

4. The wafer warpage measurement device according to claim 3, characterized in that, The contact part is a needle tip, a hemispherical contact, or a flat contact block.

5. The wafer warpage measurement device according to claim 2, characterized in that, The measuring ruler is a vernier caliper, dial caliper, or optical scale.

6. The wafer warpage measurement device according to claim 1, characterized in that, The track plane of the annular guide rail is parallel to the working surface of the loading platform.

7. The wafer warpage measurement device according to claim 1, characterized in that, Also includes: The first locking element has one end disposed on the slider assembly and the other end movably connected to the annular guide rail.

8. The wafer warpage measurement device according to claim 1, characterized in that, The working surface of the loading platform is a circular working surface with a diameter ≥ 350 mm.

9. The wafer warpage measurement device according to claim 3, characterized in that, The vernier is equipped with a second locking element, which is movably connected to the measuring scale.

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