Electronic devices, switches, electronic devices and electronic systems for driving switches

Abstract

This disclosure relates to electronic devices, switches, and electronic systems. An example electronic device for driving a switch is provided, comprising: a first terminal adapted to receive an alternating potential; a second terminal adapted to receive a reference potential; a first driving circuit for the switch, referenced to the first terminal, formed on a first substrate and including a first diode, the anode region of the first diode being connected to the first substrate; a second driving circuit, referenced to the second terminal, formed on a second substrate different from the first substrate and including a second diode, the cathode region of the second diode being connected to the second substrate; and wherein the cathode region of the first diode is connected to the second driving circuit, and the cathode region of the second diode is connected to the first driving circuit.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to French patent application number FR2408444 entitled “Commutateur”, filed on July 30, 2024, which is incorporated herein by reference to the fullest extent permitted by law. Technical Field

[0003] This specification generally relates to electronic systems, electronic devices, and switches, as well as power supplies for these electronic systems and devices using AC voltage. Specifically, this specification relates to a switch suitable for controlling a power supply to a load using AC voltage. Background Technology

[0004] It is very common to use AC voltage to power electrical or electronic devices (called loads). In fact, residential electrical wiring provides AC voltage.

[0005] Existing control switches exist suitable for controlling the power supply to loads using AC voltage. More specifically, such switches are coupled in series to the load and allow the load to be connected to or disconnected from the power source providing the AC voltage.

[0006] It is hoped that some aspects of known control switches can be improved, at least partially. Utility Model Content

[0007] Electronic systems and devices that require reliable AC power supply.

[0008] There is a need for switches that can reliably control the power supply to electronic systems and devices using AC voltage.

[0009] In particular, double-throw voltage and current switches are required to allow the power supply of electronic devices to be reliably controlled with AC voltage.

[0010] One embodiment overcomes all or part of the disadvantages of known electronic systems and devices powered by AC voltage.

[0011] In particular, one embodiment overcomes all or part of the disadvantages of known switches suitable for controlling the power supply of electronic systems or devices with AC voltage.

[0012] One embodiment provides a double-throw voltage and current switch.

[0013] One embodiment provides a double-throw switch comprising two thyristors arranged in antiparallel to each other, each thyristor being controlled by its own drive circuit.

[0014] One embodiment provides an electronic device for driving a switch, comprising:

[0015] - A first terminal suitable for receiving alternating potentials;

[0016] - A second terminal suitable for receiving a reference potential;

[0017] - A first drive circuit for a switch with reference to a first terminal is formed on a first substrate and includes a first diode whose anode region is connected to the first substrate;

[0018] - A second driving circuit with reference to a second terminal is formed on a second substrate different from the first substrate, and includes a second diode whose anode region is connected to the second substrate;

[0019] The cathode region of the first diode is connected to the second driving circuit, and the cathode region of the second diode is connected to the first driving circuit.

[0020] According to an embodiment, the first driving circuit includes a first transistor for controlling a switch, and the cathode region of the second diode is connected to the drain terminal of the first transistor.

[0021] According to an embodiment, the second driving circuit includes a second transistor for controlling a switch, and the cathode region of the first diode is connected to the drain terminal of the second transistor.

[0022] According to the embodiment, the first and second transistors are MOS type transistors.

[0023] According to the embodiment, the first and second diodes are parasitic diodes of the third MOS transistor.

[0024] According to an embodiment, the first and second diodes are substrate diodes of the third transistor.

[0025] According to an embodiment, the first and second diodes are intrinsic diodes of a third transistor, the source terminal of which is connected to its substrate terminal.

[0026] According to an embodiment, the first and second diodes are diodes that are laterally isolated through deep isolation trenches.

[0027] According to an embodiment, the first driving circuit includes a power supply circuit connected to the first terminal.

[0028] Another embodiment provides a switch, including:

[0029] - The drive mechanism described above;

[0030] - A first thyristor, the cathode of which is connected to the first terminal and the anode of which is connected to the second terminal and adapted to be driven by a first driving circuit; and

[0031] - A second thyristor, whose anode is connected to the first terminal and whose cathode is connected to the second terminal and is adapted to be driven by a second drive circuit.

[0032] According to one embodiment, the first driving circuit includes a first transistor for controlling the switch, and the anode region of the second diode is connected to the drain terminal of the first transistor. According to another embodiment, the first transistor includes the source terminal of a trigger connected to a first thyristor.

[0033] According to one embodiment, the second driving circuit includes a second transistor for controlling the switch, and the anode region of the first diode is connected to the drain terminal of the second transistor. According to another embodiment, the second transistor includes the source terminal of a trigger connected to a second thyristor.

[0034] Another embodiment provides an electronic device including a load adapted to receive alternating voltage and a switch as described above, wherein a third terminal of the load is connected to the first terminal.

[0035] Another embodiment provides an electronic system including the foregoing-described means and a power supply adapted to provide alternating voltage.

[0036] Another embodiment provides a method for controlling a load supplied by a power source suitable for supplying alternating voltage, wherein the load is connected to the power source via a switch comprising:

[0037] - A first terminal suitable for receiving alternating potentials;

[0038] - A second terminal suitable for receiving a reference potential;

[0039] - A first thyristor, whose cathode is connected to a first terminal and whose anode is connected to a second terminal;

[0040] - A first drive circuit for a switch with reference to a first terminal is formed on a first substrate and includes a first diode whose anode region is connected to the first substrate;

[0041] - A second driving circuit for a second thyristor with reference to a second terminal is formed on a second substrate different from the first substrate, and includes a second diode whose anode region is connected to the second substrate;

[0042] The cathode region of the first diode is connected to the second driving circuit, and the cathode region of the second diode is connected to the first driving circuit. Attached Figure Description

[0043] The foregoing features and advantages, as well as other features and advantages, will be described in detail below with reference to the accompanying drawings, in which specific embodiments are given by way of illustration rather than limitation, wherein:

[0044] Figure 1 The illustration shows an electronic system including a switch according to one embodiment;

[0045] Figure 2 A more detailed illustration is provided of an electronic system including a switch according to one embodiment; and

[0046] Figure 3 The diagram illustrates a cross-sectional view of a portion of a MOS transistor; and

[0047] Figure 4 The diagram shows a cross-sectional view of a diode. Detailed Implementation

[0048] In the various figures, the same features are indicated by the same reference numerals. In particular, common structural and / or functional features in the various embodiments may have the same reference numerals, and may have the same structure, dimensions, and material properties.

[0049] For clarity, only detailed illustrations and descriptions are provided to aid in understanding the embodiments described herein.

[0050] Unless otherwise indicated, when two elements are said to be connected together, it means a direct connection without any intermediate elements other than a conductor, and when two elements are said to be coupled together, it means that the two elements can be connected or they can be coupled via one or more other elements.

[0051] In the following disclosure, unless otherwise indicated, when referring to absolute position qualifiers such as the terms “front,” “back,” “top,” “bottom,” “left,” “right,” etc., or relative position qualifiers such as the terms “above,” “below,” “higher,” “lower,” etc., or orientation qualifiers such as “horizontal,” “vertical,” etc., reference shall be made to the orientation shown in the figures.

[0052] Unless otherwise stated, the expressions “approximately,” “around,” “substantially,” and “around” indicate within 10%, and preferably within 5%.

[0053] The embodiments described below relate to powering electronic systems and devices with AC voltage, such as the voltage provided by residential electrical wiring (also known as the power grid). The embodiments involved in this disclosure more particularly relate to a switch suitable for controlling the power supply to electrical or electronic devices. The switch of interest is a double-throw current or voltage switch comprising two thyristors arranged antiparallel to each other, each thyristor being controlled by its own drive circuitry. References Figure 1 Describe the overall schematic diagram of this switch, and refer to... Figure 2A specific example of this switch is described. Unlike other switches on the market, this switch has the advantage of not experiencing uncontrolled conduction when the sign of the AC current changes. To this end, the drive circuit suitable for controlling the switch uses cleverly deployed stray diodes to prevent reverse polarity. Reference Figure 2 and Figure 3 This will be described in detail.

[0054] Furthermore, the embodiments described below are particularly applicable to the field of industrial electronic devices, such as industrial ovens (baking ovens, ovens for large cooking), industrial motors (especially starting circuits that may draw high-intensity current), and solid-state relays (such as switches suitable for high voltage (e.g., around 400V) and high current (e.g., driving currents above 1A and up to tens of amperes).

[0055] Furthermore, and more generally, the embodiments described above are particularly suitable for any type of industrial market that requires AC voltage to power electronic devices. More specifically, such a switch can be designed for use in industrial sectors such as green energy, infrastructure electrification, the Internet of Things (IoT), and smart homes, where electricity and energy consumption are critical factors.

[0056] Figure 1 An embodiment of an electronic system 100 including an electronic device 110 is illustrated.

[0057] According to one embodiment, the electronic system 100 includes a load 110, which represents a portion of the electronic system 100 intended to be powered by a power supply 120. By way of example, the load 110 is an electrical device. The system 100 also includes, in one embodiment, a switch 130 adapted to control the current and voltage supply from the power supply 120 to the load 110.

[0058] According to one embodiment, power supply 120 is an AC voltage source adapted to provide an AC voltage VAC120 that allows power to be supplied to electronic device 110.

[0059] To form system 100, these different systems are installed as follows: A first terminal of power supply 120 is coupled (preferably connected) to a first terminal of load 110. A second terminal of power supply 120 is coupled (preferably connected) to node GND100, which constitutes the reference node of system 100, and provides a reference potential, such as ground. A second terminal of load 110 is coupled (preferably connected) to node N110. A first terminal of switch 1130 is coupled (preferably connected) to node N110, and a second terminal of switch 1130 is coupled (preferably connected) to reference node GND100.

[0060] According to one embodiment, switch 130 is a double-throw current and voltage switch. Switch 130 includes two thyristors T131 and T132, and their drive circuits Drive131 and Drive132. Thyristors T131 and T132 are anti-parallel coupled between node N110 and GND100. More specifically, the cathode terminal of thyristor T131 is coupled (preferably connected) to node N110, and the anode terminal of thyristor T131 is coupled (preferably connected) to node GND100. The cathode terminal of thyristor T132 is coupled (preferably connected) to node GND100, and the anode terminal of thyristor T132 is coupled (preferably connected) to node N110.

[0061] The drive circuit Drv131 is intended for driving the thyristor T131. For this purpose, the drive circuit Drv131 includes an output terminal coupled (preferably connected) to the gate terminal of the thyristor T131. The drive circuit Drv131 is referenced by node N110 and powered by a potential provided by node N111.

[0062] The drive circuit Drv132 is intended for driving the thyristor T132. For this purpose, the drive circuit Drv132 includes an output terminal coupled (preferably connected) to the gate terminal of the thyristor T132. The drive circuit Drv132 is powered by a node VDD100 providing a DC power voltage and referenced to a reference node GND100.

[0063] According to an embodiment, drive circuits Drive131 and Drive132 are integrated onto two different dies with different substrates, each substrate referencing a different reference potential. More specifically, the substrate of drive circuit Drive131 references node N111, which provides an alternating potential, while the substrate of drive circuit Drive132 references node GND100. According to an embodiment, the two dies on which drive circuits Drive131 and Drive132 are integrated are then assembled into a unique package to form a single circuit that can be referred to as a drive device. According to a variant, the two dies of drive circuits Drive131 and Drive132, as well as the two dies of thyristors T131 and T132, can be assembled into a unique package to form switch 130.

[0064] System 100, and particularly the switch 130 of device 110, has been improved to allow it to avoid unintended conduction problems when the sign of the AC current in load 110 changes. Such problems are known in some switches, such as triacs. (See reference...) Figure 1 Please describe the improvement in detail.

[0065] The method for supplying power to the load within the control system 100 is as follows: When the load 110 operates and requires power, switch 130 is turned on. For this purpose, drive circuits Drv131 and Drv132 send control current pulses to thyristors T131 and T132. As long as current flows through thyristors T131 and T132, they remain on. When the load 110 is not operating and does not require power, switch 130 is turned off. For this purpose, thyristors T131 and T132 are turned off by not sending control current pulses to them.

[0066] Thus, the embodiments described herein relate to systems of the type 100, switches of the type 130, and drive devices including drive circuits of the type Drive 131 and Drive 132. The embodiments described herein also relate to methods for controlling the power supply to a load.

[0067] Figure 2 An embodiment of an electronic system 200 is illustrated, which includes a load 210 adapted to be powered by a power supply 220, and the power supply is adapted to be controlled according to an embodiment of a switch 230.

[0068] According to one embodiment, load 210 has a reference Figure 1 The type of load 110 is described. Similarly, power supply 220 has a reference. Figure 1 The power supply 120 is described as being of a certain type and provides an AC power supply voltage of VAC220. Finally, switch 230 has a reference... Figure 1 The type of switch 130 described.

[0069] Switch 230 includes a first terminal coupled (preferably connected) to node N201, which in turn is coupled (preferably connected) to a terminal of load 210. Switch 230 also includes a second terminal coupled (preferably connected) to a reference node GND200 of system 200.

[0070] According to one embodiment, like switch 130, switch 230 is a double-throw current and voltage switch. Switch 230 includes two thyristors T231 and T232, and their drive circuits Drive231 and Drive232. Thyristors T231 and T232 are anti-parallel coupled between node N201 and GND200. More specifically, the cathode terminal of thyristor T231 is coupled (preferably connected) to node N201, and the anode terminal of thyristor T231 is coupled (preferably connected) to node GND200. The cathode terminal of thyristor T232 is coupled (preferably connected) to node GND200, and the anode terminal of thyristor T232 is coupled (preferably connected) to node N201.

[0071] According to an embodiment, drive circuits Drive231 and Drive232 are integrated onto two different dies with different substrates, each substrate referencing a different reference potential. More specifically, the substrate of drive circuit Drive231 references node N201 providing an AC potential, while the substrate of drive circuit Drive232 references node GND200. According to an embodiment, the two dies on which drive circuits Drive231 and Drive232 are integrated are then assembled into a single package to form a single circuit that can be referred to as a drive device. According to a variant, the two dies of drive circuits Drive231 and Drive232, as well as the two dies of thyristors T231 and T232, can be assembled into a single package to form switch 230.

[0072] The drive circuit Drv231 is intended for driving the thyristor 231. For this purpose, the drive circuit Drv231 includes an output terminal coupled (preferably connected) to the gate terminal of the thyristor 231. The drive circuit Drv231 is supplied by node N204 and referenced to node N201.

[0073] The drive circuit Drv231 includes:

[0074] - Circuit GD231 used to control the gate of thyristor 231;

[0075] - Level shifter circuit LS231; and

[0076] - Power supply circuit Supp231.

[0077] The circuit GD231, used to control the gate of thyristor 231, is a circuit that allows control current pulses to be supplied to the gate of thyristor 231. In other words, the output of circuit GD231 corresponds to the output of drive circuit Driv231.

[0078] The circuit Drive231 includes a metal-oxide-semiconductor field-effect transistor (or MOSFET transistor, or MOS transistor) M231-1. According to one example, transistor M231-1 is an N-channel MOS transistor, or an N-type MOS transistor, or an NMOS transistor. As an alternative within the capabilities of those skilled in the art, transistor M231-1 may be a P-channel MOS transistor, or a P-type MOS transistor, or a PMOS transistor. The source terminal of transistor M231-1 is coupled to the gate of thyristor T231, for example, via resistor R231-1. The drain terminal of transistor M231-1 is coupled to a reference node GND200. A parasitic diode of transistor M231-1 is present in... Figure 2The parasitic diode is shown in the figure. This is the intrinsic diode D231-1, also known as the body diode, whose anode is coupled (preferably connected) to the source terminal of transistor M231-1, and whose cathode is coupled (preferably connected) to the drain terminal of transistor M231-1. According to an embodiment, circuit GD231 further includes diode D231-2, which is formed in and on the substrate on which circuit Driv231 is formed. According to an embodiment, the anode terminal of diode D231-2 is coupled (preferably connected) to node N201, and the cathode terminal of diode D231-2 is coupled (preferably connected) to the terminal of drive circuit Driv232, such as the drain terminal of transistor M232-1 described below. The function of diode D231-2 is described in more detail below. According to one embodiment, diode D231-2 has a P-type doped well, which is coupled (preferably connected) to the substrate of drive circuit Driv231.

[0079] According to the first preferred embodiment, diode D231-2 is a MOS transistor ( Figure 2 Parasitic diodes (not shown), such as intrinsic diodes (also called body diodes) or substrate diodes. Examples of the structure of a MOS transistor and its parasitic diodes will be provided in conjunction with... Figure 3 Describe it.

[0080] According to the second embodiment, diode D231-2 is combined as follows: Figure 4 The substrate diode described.

[0081] The circuit GD231 also includes a second transistor M231-2, a current source CS231-1, and a Zener diode DZ231-1. Transistor M231-2 couples node N201 to node N202, which in turn is coupled (preferably connected) to the gate terminal of transistor M231-1. More specifically, the source terminal of transistor M231-2 is coupled (preferably connected) to node N201, and the drain terminal of transistor M231-2 is coupled (preferably connected) to node N202. The gate terminal of transistor M231-2 is adapted to receive a voltage from the level shifter circuit LS231. The output terminal of current source CS231-1 is coupled (preferably connected) to node N202, and the reference terminal of current source CS231-1 is coupled (preferably connected) to node N204. The anode of the Zener diode DZ231-1 is coupled (preferably connected) to node N201, and the cathode of the Zener diode DZ231-1 is coupled (preferably connected) to node N202.

[0082] The level shifter circuit LS231 is designed to shift the control signal of the Drv232 circuit, which is referenced to node GND200 and supplied by the potential present at node VDD200, to the Drv232 circuit, which is referenced to and supplied by node N201, thereby reducing the voltage supplied by the power supply circuit Supp231. The LS231 circuit includes the level shifter circuit LS231-1 and four NMOS transistors M231-3, M231-4, M231-5, and M231-6.

[0083] According to one example, the level shifter circuit LS231-1 is powered by the potential of node N204 and referenced to node N201. The inverting output of circuit L231-1 is coupled (preferably connected) to the gate of transistor M231-3 of circuit GD231.

[0084] According to the example, transistors M231-3 and M231-6 are low-voltage transistors arranged to form a low-voltage current mirror circuit. Transistors M231-4 and M231-5 are high-voltage transistors arranged to form a cascode circuit to protect the low-voltage current mirror from high voltage. More specifically, the source terminal of transistor M231-3 is coupled (preferably connected) to node N201, and the drain terminal of transistor M231-3 is coupled (preferably connected) to the source of transistor M231-4. The drain terminal of transistor M231-4 is coupled (preferably connected) to the gate terminals of transistors M231-4 and M231-5, as well as the drain terminal of transistor M231-5. The source terminal of transistor M231-6 is coupled (preferably connected) to node N201, and the drain terminal of transistor M231-6 is coupled (preferably connected) to the gate terminals of transistors M231-3 and M231-6 and the source terminal of transistor M231-5.

[0085] The intrinsic diodes of transistors M231-3, M231-4, M231-5, and M231-6 are all shown, and the base diodes of transistors M231-4 and M231-5 are also shown. More specifically, transistor M231-4 includes a base diode D231-3 and an intrinsic diode D231-4. Similarly, transistor M231-5 includes intrinsic diodes D231-5 and D231-6.

[0086] The circuit LS231 also includes a resistor R231-2 that couples the drain terminal of transistor M231-4 to the drive circuit Driv232.

[0087] Power supply circuit Supp231 is adapted to provide a supply voltage from a potential provided by node N201. For this purpose, power supply circuit Supp231 includes circuitry Ref231 providing a reference potential, a hysteresis voltage comparator circuit LS231-2, a depletion NMOS type high-voltage transistor M231-7, and a supply capacitor C231-1. A first terminal of capacitor C231-1 is coupled (preferably connected) to node N204, and a second terminal of capacitor C231-1 is coupled (preferably connected) to the reference node N201. The charge level of capacitor C231-1 defines the on / off state of transistor M231-7. The operation of power supply circuit Supp231 will be understood by those skilled in the art.

[0088] Circuit Ref231 is supplied with the potential of node N204 and referenced to node N201, providing a reference potential, for example, a different reference potential from that provided by node GND200. Circuit Ref231 provides this reference potential to the first input of the hysteresis voltage comparator circuit LS231-2. The second input (-) of the hysteresis voltage comparator circuit LS231-2 is coupled (preferably connected) to node N204. The hysteresis voltage comparator circuit is referenced to node N201 and controls the gate of transistor M231-7. The source terminal of transistor M231-7 is coupled (preferably connected) to node N204, and the drain terminal of transistor M231-7 is connected to the anode of thyristor T231. Figure 2 The parasitic diode of transistor M231-7 is shown. More specifically, an intrinsic diode D231-7 connecting the source and drain terminals of transistor M231-7 is shown, as well as a substrate diode D231-8 connecting the drain terminal to node N201 and the substrate of circuit DRIV231. Furthermore, another substrate parasitic diode D231-9 appears between the drain terminal of transistor M231-7 and node GND200, which itself is connected to the substrate of circuit Driv232.

[0089] The drive circuit Drv232 is suitable for driving the thyristor T232. For this purpose, the drive circuit Drv232 includes an output terminal coupled (preferably connected) to the gate terminal of the thyristor T232. The drive circuit Drv232 is powered by node VDD100, which provides a DC power supply voltage, and references a reference node GND100.

[0090] The Drive232 driver circuit includes:

[0091] - Circuit GD232 used to control the gate of thyristor T232;

[0092] - The control circuit VR232 for the level shifting circuit LS231; and

[0093] - Control circuit MCU230.

[0094] The circuit GD232, used to control the gate of the thyristor T232, is a circuit that allows control current pulses to be supplied to the gate of the thyristor T232. In other words, the output of circuit GD232 corresponds to the output of drive circuit Driv232.

[0095] Circuit GD232 includes an NMOS transistor M232-1. Alternatively, transistor M232-1 can be a PMOS transistor, according to an alternative known to those skilled in the art. The source terminal of transistor M232-1 is coupled to the gate of thyristor T232, for example, through resistor R232-1. The drain terminal of transistor M232-1 is coupled to node N201. The parasitic diode of transistor M232-1 is... Figure 2 As shown in the figure. This parasitic diode is an intrinsic diode D232-1, whose anode is coupled (preferably connected) to the source terminal of transistor M232-1, and whose cathode is coupled (preferably connected) to the drain terminal of transistor M232-1.

[0096] According to an embodiment, circuit GD232 further includes diode D232-2, which is formed in and on the substrate on which circuit Drive232 is formed. According to an embodiment, the cathode terminal of diode D232-2 is coupled (preferably connected) to a terminal of driving circuit Drive231, more specifically, coupled (preferably connected) to the drain terminal of transistor M231-1, while the anode terminal of diode D232-2 is coupled (preferably connected) to node GND200. The function of diode D232-2 is described in more detail below. According to one embodiment, diode D232-2 has a P-type doped well, which is coupled (preferably connected) to the substrate of driving circuit Drive232.

[0097] According to the first preferred embodiment, diode D232-2 is a MOS transistor ( Figure 2 Parasitic diodes (not shown), such as intrinsic diodes (also called body diodes) or substrate diodes. Examples of the structure of a MOS transistor and its parasitic diodes will be provided in conjunction with... Figure 3 Describe it.

[0098] According to the second embodiment, diode D232-2 is similar to a combination Figure 4 The substrate diode described.

[0099] The circuit GD232 also includes a second transistor M232-2, a current source CS232-1, and a Zener diode DZ232-1. Transistor M232-2 couples node GND200 to node N205, and node N205 is in turn coupled (preferably connected) to the gate terminal of transistor M232-1. More specifically, the source terminal of transistor M232-2 is coupled (preferably connected) to node GND200, and the drain terminal of transistor M232-2 is coupled (preferably connected) to node N205. The gate terminal of transistor M232-2 is adapted to receive the control potential of node N207. The output terminal of current source CS232-1 is coupled (preferably connected) to node N205, and the power supply terminal of current source CS232-1 is coupled (preferably connected) to node VDD200, which receives the power supply potential. The anode of the Zener diode DZ232-1 is coupled (preferably connected) to node GND200, and the cathode of the Zener diode DZ232-1 is coupled (preferably connected) to node N205.

[0100] The VR232 control circuit of the LS231 level shifter circuit enables the generation of two complementary control signals based on the control signals provided by the MCU230 control circuit. The VR232 circuit includes two power logic inverters formed by transistors M232-5, M232-6 and two transistors M232-3 and M232-4, and a Schmitt trigger circuit LS232-1 (also known as "Schmitt trigger" LS232-1) to interpret the control signals provided by the MCU230 control circuit.

[0101] According to one example, transistors M232-3, M232-4, M232-5, and M232-6 are arranged to form two cascaded inverters for controlling the level shifter circuit LS231. More specifically, the source terminal of transistor M232-3 is coupled (preferably connected) to node VDD200, and the drain terminal of transistor M232-3 is coupled (preferably connected) to the drain of transistor M232-4. The source terminal of transistor M232-4 is coupled (preferably connected) to reference node GND200. The source terminal of transistor M232-6 is coupled (preferably connected) to node VDD200, and the drain terminal of transistor M232-6 is coupled (preferably connected) to the drain terminal of transistor M232-5. The source terminal of transistor M232-5 is coupled (preferably connected) to reference node GND200. The gate terminals of transistors M232-3 and M232-4 are coupled (preferably connected) to each other and to node N207. This node N207 is further coupled (preferably connected) to an intermediate node between transistors M232-5 and M232-6. The gate terminals of transistors M232-5 and M232-6 are coupled (preferably connected) to each other and to the output terminal of the voltage shifter circuit LS232-1. The intrinsic diodes of transistors M232-3, M232-4, M232-5, and M232-6 are all shown.

[0102] The control circuit VR232 also includes Zener diodes DZ232-2 and DZ232-3, designed to protect the drive circuit Drive232 from electrostatic discharge. For this purpose, the cathode terminal of diode DZ232 is coupled (preferably connected) to node N206, which corresponds to the intermediate node between transistors M232-3 and M232-4. This node N206 is also coupled (preferably connected) to the second terminal of resistor R232-1 in circuit LS231. The anode terminal of diode DZ232-2 is coupled (preferably connected) to reference node GND200. The cathode terminal of diode DZ232-3 is coupled (preferably connected) to node N207. The anode terminal of diode DZ232-3 is coupled (preferably connected) to node GND200.

[0103] The input terminal of the voltage shifter circuit LS232-1 is coupled (preferably connected) to the output terminal of the control circuit MCU230.

[0104] The control circuit VR232 also includes a resistor R232-2 that couples node 207 to circuit LS231 of the drive circuit Driv231. More specifically, the first terminal of resistor R232-2 is coupled (preferably connected) to node N207, and the second terminal of resistor R232-2 is coupled (preferably connected) to the drain terminal of transistor M231-5.

[0105] The control circuit MCU230 is suitable for providing a control voltage to the transistor M232-1, thereby converting it into control pulses for the thyristor T232. In practice, the control circuit MCU230 can be a controller, microcontroller, processor, or / and microprocessor.

[0106] The control circuit MCU230 may also include a supply capacitor C232-1. The first terminal of capacitor C232-1 is coupled (preferably connected) to node VDD200, and the second terminal of capacitor C232-1 is coupled (preferably connected) to reference node GND200.

[0107] One advantage of the drive circuits Drive231 and Drive232 is their enhanced resistance to reverse polarization. Specifically, diodes D231-1 and D231-2 protect drive circuits Drive231 and Drive232 from reverse polarity. More specifically, diode D231-2, formed in and on the substrate of drive circuit Drive231, protects drive circuit Drive232 (particularly its transistor M232-1) from reverse polarity. Similarly, diode D232-2, formed in and on the substrate of drive circuit Drive232, protects drive circuit Drive231 (particularly its transistor M231-1) from reverse polarity. In other words, each drive circuit Drive231, Drive232 is protected from reverse polarity by diodes coupled (preferably connected) to the substrate of the other drive circuit Drive232, Drive231 via its P-box. The use of substrate diodes D231-2, D231-9, and D232-2 integrated into the die of the drive circuits Drive231 and Drive232 allows for the avoidance of using non-integrated discrete diodes.

[0108] The method for supplying power to the load 210 within the control system 200 is as follows: When the load 210 operates and requires power, switch 230 is turned on. For this purpose, drive circuits Drv 231 and Drv 232 send control current pulses to thyristors T231 and T232. Thyristors T231 and T232 remain on as long as current flows through them. When the load 210 is not operating and does not require power, switch 230 is turned off. For this purpose, thyristors T231 and T232 are turned off by not sending control current pulses to them.

[0109] Figure 3 This is a cross-sectional view of an actual example embodiment of an N-channel MOS transistor (or NMOS transistor) T300, and the location of its stray diode is particularly illustrated.

[0110] As mentioned above, Figure 3 The diagram illustrates an NMOS transistor T300, which includes a stray diode, specifically an intrinsic diode BD300 and a substrate diode SD300. Like any MOS transistor, transistor T300 includes a source terminal S300, a drain terminal D300, a gate terminal G300, and a substrate terminal Sub300.

[0111] Transistor T300 is formed in and on a P-type doped substrate 301. An N-type doped well (e.g., obtained by epitaxy) extends over the entire top of substrate 301. The PN junction formed by substrate 301 and well 302 forms the substrate diode SD300 of transistor T300. More specifically, the anode region of diode SD300 is formed by substrate 301, while the cathode region of diode SD300 is formed by well 302.

[0112] An N-type doped well 303, intended for receiving high voltages, is formed within well 302. This well 303 allows the formation of the drain region of transistor T300. A P-type doped well 304 is formed on a portion of well 303 and extends over a portion of the surface of well 303. Well 304 allows the formation of the channel region of transistor T300. The PN junction formed by wells 303 and 304 forms the intrinsic diode BD300 of transistor T300. More specifically, the anode region of diode BD300 is formed by substrate 304, while the cathode region of diode BD300 is formed by well 303.

[0113] An N-type doped well 305 is formed within well 304. This well 305 allows the formation of the source region of transistor T300. A heavily N-doped source contact region 306 is formed within well 305. Similarly, a heavily P-doped source contact region 307 is formed within well 304.

[0114] A gate stack 308 is formed over the channel region 304 and a portion of the drain region 303 of transistor T300. A gate contact 308 is formed on this stack. A heavily N-doped drain contact region 309 is formed within the well 304.

[0115] All these contact areas are defined by an electrically insulating layer 311. Furthermore, the transistor T300 may be laterally insulated from the electrically insulating trench 310, or laterally insulated via a capacitively insulating trench that can also serve as a substrate contact.

[0116] As mentioned above Figure 2 As described, diodes D231-2 and D232-2 can be formed from parasitic diodes of MOS-type transistors. Therefore, these diodes can, for example, be formed from substrate diodes of the type SD300. According to another example, these diodes can be formed from intrinsic diodes of the type BD300, but in this case, the source terminal of the transistor to which the intrinsic diode belongs is coupled (preferably connected) to its substrate terminal.

[0117] Figure 4 This is a cross-sectional view of an actual example of an embodiment of the D400 diode.

[0118] A diode D400 is formed in and on a P-type doped substrate 401(N). An N-type doped well 402(N) (e.g., obtained by an epitaxial process) extends over the entire upper portion of the substrate 401. The PN junction formed by the substrate 401 and the well 402 forms the diode D400. More specifically, the anode region of the diode D400 is formed by the substrate 401, while the cathode region of the diode D400 is formed by the well 402.

[0119] The contact connection can be formed as follows: An N-type doped layer 403 (N) is formed on the upper surface of layer 402, and a heavily N-type doped layer 404 (N+) is formed on a portion of the surface of layer 403 to form the contact connection. According to one example, layer 404 is coupled (preferably connected) to node K400, which forms the cathode terminal of diode D400. The remaining portion of the surface of layer 403 is covered, for example, with an electrically insulating layer 406.

[0120] According to one example, diode D400 is laterally defined by a circular electrically insulating trench 310 or by a circular capacitive insulating trench that can also serve as substrate contact recovery. According to one example, insulating trench 405 includes an insulating core, or a core of heavily doped P-type material, in contact with substrate 401, and, for example, an electrically insulating outline.

[0121] Figure 3Details regarding the materials used and doping levels in the structures shown are not described, and these are within the capabilities of those skilled in the art. Similarly, all steps of the method for manufacturing such transistors or diodes are also within the capabilities of those skilled in the art.

[0122] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these embodiments can be combined, and other variations will readily conceive of by those skilled in the art.

[0123] Finally, based on the functional descriptions provided above, the actual implementation of the embodiments and variations described herein is within the capabilities of those skilled in the art.

Claims

1. An electronic device for driving a switch, characterized in that, include: A first terminal suitable for receiving alternating potentials; A second terminal suitable for receiving a reference potential; A first drive circuit for a switch with reference to a first terminal is formed on a first substrate and includes a first diode, the anode region of the first diode being connected to the first substrate; A second driving circuit, referenced to a second terminal, is formed on a second substrate different from the first substrate, and includes a second diode, the cathode region of which is connected to the second substrate; and The cathode region of the first diode is connected to the second driving circuit, and the cathode region of the second diode is connected to the first driving circuit.

2. The electronic device for driving a switch as claimed in claim 1, characterized in that, The first driving circuit includes a first transistor for controlling the switch, and the cathode region of the second diode is connected to the drain terminal of the first transistor.

3. The electronic device for driving a switch as claimed in claim 1, characterized in that, The second driving circuit includes a second transistor for controlling the switch, and the cathode region of the first diode is connected to the drain terminal of the second transistor.

4. The electronic device for driving a switch as described in claim 2, characterized in that, The second driving circuit includes a second transistor for controlling the switch, and the anode region of the first diode is connected to the drain terminal of the second transistor, wherein the first transistor and the second transistor are MOS transistors.

5. The electronic device for driving a switch as claimed in claim 1, characterized in that, The first diode and the second diode are the corresponding parasitic diodes of the third MOS transistor.

6. The electronic device for driving a switch as described in claim 5, characterized in that, The first diode and the second diode are the corresponding substrate diodes of the third MOS transistor.

7. The electronic device for driving a switch as claimed in claim 5, characterized in that, The first diode and the second diode are the corresponding intrinsic diodes of the third MOS transistor, and the source terminals of the third MOS transistor are respectively connected to its substrate terminals.

8. The electronic device for driving a switch as claimed in claim 1, characterized in that, The first diode and the second diode are diodes that are laterally isolated by a deep isolation trench.

9. The electronic device for driving a switch as claimed in claim 1, characterized in that, The first driving circuit includes a power supply circuit connected to the first terminal.

10. A switch, characterized in that, include: The electronic device for driving a switch as described in claim 1; A first thyristor, the cathode of which is connected to the first terminal and the anode of which is connected to the second terminal and is adapted to be driven by a first driving circuit; as well as The second thyristor has its anode connected to the first terminal and its cathode connected to the second terminal and is adapted to receive a drive signal from the second drive circuit.

11. The switch as claimed in claim 10, characterized in that, The first driving circuit includes a first transistor for controlling the switch, and the anode region of the second diode is connected to the drain terminal of the first transistor. The first transistor includes the source terminal of a trigger connected to the first thyristor.

12. The switch as claimed in claim 10, characterized in that, The second driving circuit includes a second transistor for controlling the switch, and the anode region of the first diode is connected to the drain terminal of the second transistor, and the second transistor includes the source terminal of the trigger connected to the second thyristor.

13. An electronic device, characterized in that, It includes a load adapted to receive alternating voltage and a switch as claimed in claim 10, wherein a third terminal of the load is connected to the first terminal.

14. An electronic system, characterized in that, Includes the electronic device as described in claim 13 and a power supply suitable for providing alternating voltage.

Images