Photovoltaic cells, photovoltaic modules and photovoltaic systems

Abstract

This application relates to the field of photovoltaic technology, providing a photovoltaic cell, a photovoltaic module, and a photovoltaic system. The photovoltaic cell includes: a silicon substrate, comprising at least one sidewall located at the edge of the silicon substrate, and opposing first and second surfaces; a protective layer including a first protective portion, a second protective portion, and a third protective portion. The first protective portion is located in at least a portion of the first surface adjacent to the sidewall at the edge of the silicon substrate, the second protective portion is located in at least one sidewall, and the third protective portion is located in at least a portion of the second surface adjacent to the sidewall at the edge of the silicon substrate. The second protective portion connects the first and third protective portions. This method can protect the sidewalls and edges of the photovoltaic cell, reducing carrier recombination, lowering leakage current losses, and improving the photoelectric conversion efficiency of the photovoltaic cell.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to photovoltaic cells, photovoltaic modules and photovoltaic systems. Background Technology

[0002] During the transfer and transportation of photovoltaic cells, hard contact with tooling fixtures is inevitable. In particular, the edges of the photovoltaic cells have the most contact and are more prone to damage due to their sharp edges. This can cause wear and tear on the passivation layer, resulting in a combined effect on the efficiency of the photovoltaic cells.

[0003] Therefore, the edge area is easily scratched and worn, resulting in microcracks and defects, which become recombination centers for minority carriers (such as holes or electrons), and easily lead to leakage losses. Utility Model Content

[0004] This application provides a photovoltaic cell, a photovoltaic module, and a photovoltaic system that can reduce carrier recombination in the photovoltaic cell, reduce leakage loss in the photovoltaic cell, and improve the photoelectric conversion efficiency of the photovoltaic cell.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] In a first aspect, a photovoltaic cell is provided, comprising: a silicon substrate including at least one sidewall located at the edge of the silicon substrate, and opposing first and second surfaces; a protective layer including a first protective portion, a second protective portion, and a third protective portion, wherein the first protective portion is located in at least a portion of the first surface adjacent to the sidewall at the edge of the silicon substrate, the second protective portion is located in at least one sidewall, and the third protective portion is located in at least a portion of the second surface adjacent to the sidewall at the edge of the silicon substrate, and the second protective portion connects the first protective portion and the third protective portion.

[0007] In conjunction with the first aspect, in some embodiments of the first aspect, the photovoltaic cell further includes a passivation layer located between the protective layer and the silicon substrate.

[0008] In conjunction with the first aspect, in some embodiments of the first aspect, the photovoltaic cell further includes a first doped layer and a second doped layer; the silicon substrate includes a first region and a second region, both the first region and the second region being located on the second surface of the silicon substrate, or the first region being located on the first surface of the silicon substrate and the second region being located on the second surface of the silicon substrate, the first doped layer being disposed in the first region and the second doped layer being disposed in the second region, and the doping polarities of the first doped layer and the second doped layer being different.

[0009] In conjunction with the first aspect, in some embodiments of the first aspect, the first region is located on the first surface of the silicon substrate, and the second region is located on the second surface of the silicon substrate; the first doped layer is disposed on the first surface, located between the silicon substrate and the passivation layer, and at least a portion of the first doped layer is stacked with the passivation layer and the first protective portion.

[0010] In conjunction with the first aspect, in some embodiments of the first aspect, a second doped layer is disposed on a second surface, located between the silicon substrate and the passivation layer, and at least a portion of the second doped layer is provided with a passivation layer and a third protective portion.

[0011] In conjunction with the first aspect, in some embodiments of the first aspect, both the first region and the second region are located on the second surface of the silicon substrate, and the first region and the second region are alternately disposed on the second surface of the silicon substrate; the first doped layer and the second doped layer are alternately disposed on the second surface of the silicon substrate, and at least a passivation layer and a third protective portion are stacked on a portion of the second doped layer.

[0012] In conjunction with the first aspect, in some embodiments of the first aspect, the width of the first protective portion along the first direction is greater than 0 μm, and the width of the first protective portion is less than or equal to 1000 μm, and the first direction intersects the extension direction of the protective layer.

[0013] In conjunction with the first aspect, in some embodiments of the first aspect, along the first direction, the distance between the side of the second doped layer near the second protective portion and the sidewall where the second protective portion is located is a first distance, the first distance being in the range of 0um-500um, and the first direction intersecting the extension direction of the protective layer.

[0014] In conjunction with the first aspect, in some embodiments of the first aspect, the width of the third protective part along the first direction is greater than the first distance.

[0015] In conjunction with the first aspect, in some embodiments of the first aspect, the width of the third protective portion along the first direction is 50um-1000um.

[0016] In conjunction with the first aspect, in some embodiments of the first aspect, the thickness of the protective layer is 4µm-60µm.

[0017] In conjunction with the first aspect, in some embodiments of the first aspect, the protective layer is made of at least one of acrylic resin, polyolefin polymer magnesium oxide, and magnesium fluoride.

[0018] In conjunction with the first aspect, in some embodiments of the first aspect, the refractive index of the protective layer ranges from 1.3 to 1.8. In a second aspect, a photovoltaic module is provided, comprising the photovoltaic cells provided in the first aspect and any embodiment thereof.

[0019] Thirdly, a photovoltaic system is provided, characterized in that the photovoltaic system includes the photovoltaic modules provided in the second aspect.

[0020] Based on the photovoltaic cell provided by this utility model, since the first protective part is located on the first surface of the photovoltaic cell, the second protective part is located on the sidewall of the photovoltaic cell, and the third protective part is located on the second surface of the photovoltaic cell, and the second protective part connects the first protective part and the third protective part, the sidewall and edge of the photovoltaic cell can be protected, reducing carrier recombination of the photovoltaic cell, reducing leakage loss of the photovoltaic cell, thereby improving the photoelectric conversion efficiency of the photovoltaic cell. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a photovoltaic cell provided by this utility model;

[0022] Figure 2 This is a schematic diagram of the structure of another photovoltaic cell provided by this utility model.

[0023] Figure label:

[0024] Photovoltaic cell-10, silicon substrate-101, sidewall-1011, first surface-1012, second surface-1013, tunneling oxide layer-1014, silicon substrate-1015, protective layer-102, first protective part-1021, second protective part-1022, third protective part-1023, passivation layer-103, first doped layer-104, second doped layer-105. Detailed Implementation

[0025] In this embodiment of the invention, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design described as "exemplary" or "for example" in this embodiment of the invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner to facilitate understanding.

[0026] Furthermore, to facilitate a clear description of the technical solutions of the embodiments of this utility model, the terms "first" and "second" are used in the embodiments of this utility model to distinguish identical or similar items with essentially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" are not necessarily different.

[0027] It is understood that the term "embodiment" used throughout the specification means that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of the present invention. Therefore, the various embodiments throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It is understood that in the various embodiments of the present invention, the sequence number of each process does not imply the order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0028] It is understood that in this utility model, "when," "if," and "if" all refer to the corresponding processing that will be carried out under certain objective circumstances, and are not limited to a specific time, nor do they require a judgment action to be performed, nor do they imply any other limitations.

[0029] It is understood that some optional features in the embodiments of this utility model can be implemented independently in certain scenarios without relying on other features, such as the current solution on which they are based, to solve the corresponding technical problems and achieve the corresponding effects. Alternatively, they can be combined with other features as needed in certain scenarios. Correspondingly, the device given in the embodiments of this utility model can also implement these features or functions, which will not be elaborated here.

[0030] In this utility model, unless otherwise specified, the same or similar parts between the various embodiments can be referred to each other. In the various embodiments and implementation methods of this utility model, unless otherwise specified or logically conflicting, the terminology and / or descriptions between different embodiments and between the implementation methods of different embodiments are consistent and can be mutually referenced. The technical features in different embodiments and between the implementation methods of different embodiments can be combined according to their inherent logical relationships to form new embodiments, implementation methods, implementation methods, or implementation approaches. The following embodiments of this utility model do not constitute a limitation on the scope of protection of this utility model.

[0031] During the transfer and transportation of photovoltaic cells 10, hard contact with tooling fixtures and other equipment is inevitable. In particular, the edge areas of photovoltaic cells 10 have the most contact and concentrated sharp edges, making them more susceptible to damage. This can cause wear and tear on the passivation layer, resulting in a combined effect on the efficiency of the photovoltaic cells.

[0032] Therefore, the edge areas are easily scratched and worn, resulting in microcracks and defects, which become recombination centers for minority carriers (such as holes or electrons), easily causing leakage losses. Therefore, a protective layer is needed to focus on protecting the edges of photovoltaic cells to reduce carrier recombination and improve the photoelectric conversion efficiency of photovoltaic cells.

[0033] To solve the above problems, this utility model provides a photovoltaic cell 10, such as... Figure 1 or Figure 2 As shown, the photovoltaic cell 10 includes: a silicon substrate 101, including at least one sidewall 1011 located at the edge of the silicon substrate 101, a first surface 1012 and a second surface 1013 opposite to each other; and a protective layer 102, including a first protective portion 1021, a second protective portion 1022 and a third protective portion 1023. The first protective portion 1021 is located in at least a portion of the first surface 1012 adjacent to the sidewall 1011 at the edge of the silicon substrate 101. The second protective portion 1022 is located in at least one sidewall 1011. The third protective portion 1023 is located in at least a portion of the second surface 1013 adjacent to the sidewall 1011 at the edge of the silicon substrate 101. The second protective portion 1022 connects the first protective portion 1021 and the third protective portion 1023.

[0034] Based on the photovoltaic cell 10 provided by this utility model, since the first protection part 1021 is located on the first surface 1012 of the photovoltaic cell 10, the second protection part 1022 is located on the sidewall 1011 of the photovoltaic cell 10, and the third protection part 1023 is located on the second surface 1013 of the photovoltaic cell 10, and the second protection part 1022 connects the first protection part 1021 and the third protection part 1023, the sidewall 1011 and the edge of the photovoltaic cell 10 can be protected, reducing carrier recombination of the photovoltaic cell 10, reducing leakage loss of the photovoltaic cell 10, thereby improving the photoelectric conversion efficiency of the photovoltaic cell 10. The photovoltaic cell 10 can be a back-contact cell, for example, a heterojunction back-contact cell or an interdigitated back-contact cell; or, the photovoltaic cell 10 can also be a bifacial cell, for example, a PERC cell, an HJT cell or a TOPCon cell. Of course, the photovoltaic cell 10 can also be other types of photovoltaic cells, and this utility model does not impose specific limitations on this.

[0035] The first surface 1012 of the silicon substrate 101 can be the light-facing surface of the silicon substrate 101, and the corresponding second surface 1013 is the back-light surface of the silicon substrate 101. Alternatively, the first surface 1012 of the silicon substrate 101 can be the back-light surface of the silicon substrate 101, and the corresponding second surface 1013 is the light-facing surface of the silicon substrate 101.

[0036] Various films can be formed on the first surface 1012 and the second surface 1013 of the silicon substrate 101. That is, the silicon substrate 101 is composed of a silicon substrate 1015 and films disposed on the silicon substrate. For example, tunneling oxide layers are formed on the first surface 1012 and the second surface 1013 of the silicon substrate 101. This utility model does not impose specific limitations on the specific film structure of the silicon substrate 101.

[0037] The silicon substrate 1015 can be monocrystalline silicon, polycrystalline silicon, or amorphous silicon, and this invention does not impose any specific restrictions on it.

[0038] like Figure 1 or Figure 2 As shown, the silicon substrate 101 is provided with a tunneling oxide layer 1014, meaning the silicon substrate 101 includes a silicon substrate 1015 and a tunneling oxide layer 1014, with the tunneling oxide layer 1014 located on the surface of the silicon substrate 1015. The tunneling oxide layer 1014 can cooperate with the doped layers of the photovoltaic cell 10 to achieve selective transport of photogenerated carriers through the quantum tunneling effect, while suppressing carrier recombination without affecting carrier absorption, thereby improving the photoelectric conversion efficiency of the photovoltaic cell 10.

[0039] The tunneling oxide layer 1014 can be one or more of the following: silicon oxide layer, aluminum oxide layer, titanium oxide layer, zinc oxide layer, intrinsic amorphous silicon layer, intrinsic polycrystalline silicon layer, intrinsic nanocrystalline silicon layer, and intrinsic mixed-crystal silicon layer.

[0040] Along the thickness direction of the photovoltaic cell 10, the thickness of the tunneling oxide layer 1014 is greater than or equal to 0.1 nm and less than or equal to 5 nm. For example, the thickness of the tunneling oxide layer 1014 can be 0.1 nm, 1 nm, 0.1 nm, 2 nm, 3 nm, 4 nm, or 5 nm. Of course, the thickness of the tunneling oxide layer 1014 can also have other values, and this invention does not impose specific limitations on this. Thus, by setting the thickness of the tunneling oxide layer 1014 within a suitable range, it is possible to avoid reducing the selective transport effect of photogenerated carriers due to the tunneling oxide layer 1014 being too thin, and to avoid affecting the absorption of light by the photovoltaic cell 10 due to the tunneling oxide layer 1014 being too thick. Setting an appropriate thickness for the tunneling oxide layer 1014 can improve the selective transport effect of photogenerated carriers and enhance the absorption of light by the photovoltaic cell 10.

[0041] A protective layer 102 is provided on the sidewall and the corresponding edge of the photovoltaic cell 10. The protective layer 102 may be located on one sidewall and the corresponding edge of the photovoltaic cell 10, or on two opposite sidewalls and the corresponding edges of the two sidewalls, or on two adjacent sidewalls and the corresponding edges of the two sidewalls, or on three sidewalls and the corresponding edges of the three sidewalls, or on four sidewalls and the corresponding edges of the four sidewalls. This utility model does not impose specific limitations in this regard.

[0042] The refractive index of the protective layer 102 is greater than or equal to 1.3 and less than or equal to 1.8. For example, the refractive index of the protective layer 102 is 1.3, 1.4, 1.5, 1.6, 1.7, or 1.8. Of course, the refractive index of the protective layer 102 can also have other values, and this utility model does not impose specific limitations on this. Generally, the refractive index of air is usually 1. Since the refractive index of the silicon substrate 101 is higher than that of the protective layer 102, and the refractive index of air is lower than that of the protective layer 102, the light reflectivity of the silicon substrate 101 can be reduced, thereby improving the light absorption rate of the photovoltaic cell 10.

[0043] The protective layer 102 can be made of at least one of acrylic resin, polyolefin polymer magnesium oxide, and magnesium fluoride. Of course, the protective layer 102 can also be made of other materials, and this utility model does not impose any specific limitations on this.

[0044] The protective layer 102 has a certain thickness, which can be greater than or equal to 4 μm and less than or equal to 60 μm. For example, the thickness of the protective layer 102 can be 4 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, or 60 μm. By setting the thickness of the protective layer 102 within a suitable range, it is possible to avoid the protective layer being too thin, thus failing to effectively protect the photovoltaic cell 10, or too thick, thus reducing the light absorption efficiency of the photovoltaic cell 10. Setting an appropriate thickness for the protective layer 102 can enhance its protective effect on the photovoltaic cell 10 and improve the light absorption efficiency of the photovoltaic cell 10.

[0045] In some embodiments, the thickness of the protective layer 102 can be uniform, that is, the thicknesses of the first protective portion 1021, the second protective portion 1022, and the third protective portion 1023 are the same. For example, the thicknesses of the first protective portion 1021, the second protective portion 1022, and the third protective portion 1023 are all 10 μm. This reduces the complexity of fabricating the protective layer 102.

[0046] In some embodiments, the thickness of the protective layer 102 may also be inconsistent, that is, the thicknesses of the first protective portion 1021, the second protective portion 1022, and the third protective portion 1023 are not the same. For example, the thickness of the first protective portion 1021 may be less than the thickness of the second protective portion 1022, and the thickness of the second protective portion 1022 may be less than the thickness of the third protective portion 1023. For instance, the thickness of the first protective portion 1021 may be 10 μm, the thickness of the second protective portion 1022 may be 15 μm, and the thickness of the third protective portion 1023 may be 20 μm; or, the thickness of the first protective portion 1021 may be less than the thickness of the third protective portion 1023, and the thickness of the third protective portion 1023 may be equal to the thickness of the second protective portion 1022. For instance, the thickness of the first protective portion 1021 may be 10 μm, the thickness of the second protective portion 1022 may be 15 μm, and the thickness of the third protective portion 1023 may be 15 μm. This increases the flexibility in manufacturing the protective layer 102.

[0047] Understandably, the thickness of the first protective part 1021 refers to the size of the first protective part 1021 along the thickness direction of the photovoltaic cell 10; the thickness of the second protective part 1022 refers to the size of the second protective part 1022 along the direction perpendicular to the sidewall 1011; and the thickness of the third protective part 1023 refers to the size of the third protective part 1023 along the thickness direction of the photovoltaic cell 10.

[0048] The first protective part 1021, the second protective part 1022, and the third protective part 1023 can be manufactured separately, or they can be integrally formed. This utility model does not impose specific limitations in this regard.

[0049] like Figure 1 or Figure 2As shown, the photovoltaic cell 10 also includes a passivation layer 103, which is located between the protective layer 102 and the silicon substrate 101. Thus, the passivation layer 103 can further protect the silicon substrate 101, further reducing wear and surface recombination. Simultaneously, the passivation layer 103 can prevent surface corrosion of the photovoltaic cell 10, avoiding failure and improving its lifespan. Furthermore, the passivation layer 103 can increase the refractive index of the photovoltaic cell 10 surface, improving its light absorption capacity and thus increasing its photoelectric conversion efficiency. The passivation layer 103 includes at least one of an aluminum oxide layer, a silicon nitride layer, or a silicon oxide layer. For example, the passivation layer 103 may include an aluminum oxide layer, or the passivation layer 103 may include a silicon nitride layer, or the passivation layer 103 may include a silicon oxide layer, or the passivation layer 103 may include a silicon oxide layer and an aluminum oxide layer, or the passivation layer 103 may include a silicon oxide layer and a silicon nitride layer, or the passivation layer 103 may include an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer. This utility model does not impose any specific limitations in this regard.

[0050] Along the thickness direction of the photovoltaic cell 10, the thickness of the passivation layer 103 is greater than or equal to 5 nm, and less than or equal to 100 nm. For example, the thickness of the passivation layer 103 is 5 nm, 20 nm, 50 nm, 70 nm, or 100 nm. Of course, the thickness of the passivation layer 103 can also be other values, and this utility model does not impose specific limitations on this.

[0051] The photovoltaic cell 10 also includes a first doped layer 104 and a second doped layer 105. The polarity of the first doped layer 104 and the polarity of the second doped layer 105 are different.

[0052] The polarity of the first doped layer 104 can be N-type, and the polarity of the second doped layer 105 can be P-type; or, the polarity of the first doped layer 104 can also be P-type, and the polarity of the second doped layer 105 can be N-type. This utility model does not impose specific limitations in this regard.

[0053] Different doping elements in the first doped layer 104 or the second doped layer 105 will result in different polarities in the first doped layer 104 or the second doped layer 105. For example, when the polarity of the first doped layer 104 or the second doped layer 105 is P-type, the doping element in the first doped layer 104 or the second doped layer 105 can be at least one of boron, gallium, or aluminum. Of course, the doping element can also be other doping elements, and this invention does not impose specific limitations on this. When the polarity of the first doped layer 104 or the second doped layer 105 is N-type, the doping element in the first doped layer 104 or the second doped layer 105 can be at least one of phosphorus, arsenic, or antimony. Of course, the doping element can also be other doping elements, and this invention does not impose specific limitations on this.

[0054] The first doped layer 104 or the second doped layer 105 can be a polycrystalline silicon doped layer, a monocrystalline silicon doped layer or an amorphous silicon doped layer, and the present invention does not impose specific limitations on this.

[0055] The first doped layer 104 or the second doped layer 105 has a certain thickness. For example, the thickness of the first doped layer 104 or the second doped layer 105 is greater than or equal to 10 nm, and the thickness of the first doped layer 104 or the second doped layer 105 is less than or equal to 100 nm. For example, the thickness of the first doped layer 104 or the second doped layer 105 is 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, or 100 nm. Of course, the thickness of the first doped layer 104 or the second doped layer 105 can also have other values. This utility model does not impose specific limitations on this. Thus, by setting the thickness of the first doped layer 104 or the second doped layer 105 within a suitable range, it is possible to avoid a decrease in the carrier separation effect of the first doped layer 104 or the second doped layer 105 due to it being too thin, and to avoid an increase in the parasitic absorption effect of the first doped layer 104 or the second doped layer 105 due to it being too thick. Setting an appropriate thickness for the first doped layer 104 or the second doped layer 105 can improve its carrier separation effect, reduce its parasitic absorption effect, and improve the photoelectric conversion efficiency of the photovoltaic cell 10.

[0056] The positions of the first doped layer 104 and the second doped layer 105 on the silicon substrate 101 will be described below with reference to the accompanying drawings.

[0057] As an example, taking a photovoltaic cell 10 as a back-contact cell, the silicon substrate 101 includes a first region and a second region. Both the first region and the second region are located on the second surface 1013 of the silicon substrate 101. A first doped layer 104 is disposed in the first region, and a second doped layer 105 is disposed in the second region. The doping polarities of the first doped layer 104 and the second doped layer 105 are different, and adjacent first doped layers 104 and second doped layers 105 are isolated by an isolation portion.

[0058] like Figure 1 As shown, a first doped layer 104 and a second doped layer 105 are alternately disposed on the second surface 1013 of the silicon substrate 101. At least a passivation layer 103 and a third protective portion 1023 are stacked on a portion of the second doped layer 105. In this way, the second doped layer 105, the passivation layer 103, and the third protective portion 1023 can jointly protect the second surface 1013 of the photovoltaic cell 110, further reducing carrier recombination in the photovoltaic cell 10, reducing leakage current loss in the photovoltaic cell 10, and improving the photoelectric conversion efficiency of the photovoltaic cell 10.

[0059] As another example, taking a photovoltaic cell 10 as a bifacial cell, the silicon substrate 101 includes a first region and a second region. The first region is located on the first surface 1012 of the silicon substrate 101, and the second region is located on the second surface 1013 of the silicon substrate 101. A first doped layer 104 is disposed in the first region, and a second doped layer 105 is disposed in the second region. The doping polarities of the first doped layer 104 and the second doped layer 105 are different.

[0060] like Figure 2 As shown, a first doped layer 104 is disposed on the first surface 1012, located between the silicon substrate 101 and the passivation layer 103. At least a portion of the first doped layer 104 is stacked with the passivation layer 103 and the first protective portion 1021. Thus, the first doped layer 104, the passivation layer 103, and the first protective portion 1021 can jointly protect the first surface 1012 of the photovoltaic cell 110, further reducing carrier recombination in the photovoltaic cell 10, reducing leakage current loss in the photovoltaic cell 10, and improving the photoelectric conversion efficiency of the photovoltaic cell 10.

[0061] like Figure 2 As shown, a second doped layer 105 is disposed on the second surface 1013, located between the silicon substrate 101 and the passivation layer 103. At least a portion of the second doped layer 105 is stacked with the passivation layer 103 and the third protective portion 1023. Thus, the second doped layer 105, the passivation layer 103, and the third protective portion 1023 can jointly protect the second surface 1013 of the photovoltaic cell 110, further reducing carrier recombination in the photovoltaic cell 10, reducing leakage current loss in the photovoltaic cell 10, and improving the photoelectric conversion efficiency of the photovoltaic cell 10.

[0062] like Figure 2 As shown, the first doped layer 104 is connected to the sidewall 1011. Thus, because the first doped layer 104 is connected to the sidewall 1011, the area of ​​the first doped layer 104 that can protect the first surface 1012 can be increased, further reducing carrier recombination in the photovoltaic cell 10, reducing leakage current loss in the photovoltaic cell 10, and improving the photoelectric conversion efficiency of the photovoltaic cell 10.

[0063] like Figure 1 or Figure 2 Along the first direction, the distance between the side of the second doped layer 105 near the second protective portion 1022 and the sidewall where the second protective portion 1022 is located is a first distance h1. The first distance h1 ranges from 0um to 500um. The first direction intersects the extension direction of the protective layer 102, for example, perpendicularly or at a certain angle. For example, the first distance h1 is 0um, 100um, 300um, or 500um. Of course, the first distance h1 can also have other values, and this utility model does not impose specific limitations on this. In this way, by setting the first distance h1 within a suitable range, it is possible to avoid increasing the cost of the photovoltaic cell 10 due to the first distance h1 being too small, and it is also possible to avoid reducing the carrier separation effect of the second doped layer 105 due to the first distance h1 being too large. Setting the first distance h1 within a suitable range can reduce the cost of the photovoltaic cell 10 and improve the carrier separation effect of the second doped layer 105.

[0064] Understandably, when the photovoltaic cell 10 does not include the passivation layer 103, the sidewall where the second protection part 1022 is located is the sidewall of the silicon substrate 101; when the photovoltaic cell 10 includes the passivation layer 103, the sidewall where the second protection part 1022 is located is the sidewall of the passivation layer 103 away from the silicon substrate 101.

[0065] The widths of the first protective part 1021 and the third protective part 1023 will now be described with reference to the accompanying drawings.

[0066] like Figure 1 or Figure 2The width of the first protective portion 1021 along the first direction is d1. The width d1 of the first protective portion 1021 along the first direction is greater than 0 μm, and the width d1 of the first protective portion 1021 is less than or equal to 1000 μm. The first direction intersects the extension direction of the protective layer 102, for example, perpendicularly or at a certain angle. For example, the width d1 of the first protective portion 1021 is 1 μm, 20 μm, 50 μm, 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, or 1000 μm. Of course, the width d1 of the first protective portion 1021 can also have other values, and this utility model does not impose specific limitations on this. Thus, by setting the width d1 of the first protective portion 1021 within a suitable range, it is possible to avoid both insufficient protection of the photovoltaic cell 10 due to an excessively narrow width d1 and excessive encroachment on the surface of the photovoltaic cell 10 due to an excessively wide width d1, thereby reducing the light absorption efficiency of the photovoltaic cell 10. Setting an appropriate width d1 for the first protective portion 1021 can enhance the protective effect of the protective layer 102 on the photovoltaic cell 10 and improve the light absorption efficiency of the photovoltaic cell 10.

[0067] Understandably, the width d1 of the first protective part 1021 refers to the distance between the side wall of the first protective part 1021 away from the second protective part 1022 and the side wall where the second protective part 1022 is located. For a detailed description of the side wall where the second protective part 1022 is located, please refer to the above description.

[0068] like Figure 1 or Figure 2 The width d2 of the third protective portion 1023 along the first direction is greater than the first distance h1. Thus, since the width d2 of the third protective portion 1023 is greater than the first distance h1, that is, the orthographic projection of the third protective portion 1023 on the second surface 1013 overlaps with the orthographic projection of the second doped layer 105 on the second surface 1013. When the third protective portion 1023 fails, the second doped layer 105 can protect the silicon substrate 101, further reducing the wear of the silicon substrate 101 and reducing surface recombination of the silicon substrate 101.

[0069] The width d2 of the third protective portion 1023 along the first direction is 50μm-1000μm. For example, the width d2 of the third protective portion 1023 can be 50μm, 100μm, 200μm, 300μm, 400μm, 500μm, 600μm, 700μm, 800μm, 900μm, or 1000μm. Of course, the width d2 of the third protective portion 1023 can also have other values, and this utility model does not impose specific limitations on this. When the photovoltaic cell 10 includes a second doped layer 105, setting the width d2 of the third protective portion 1023 within a suitable range can avoid the third protective portion 1023 being too narrow, resulting in insufficient protection for the photovoltaic cell 10, and can also avoid the third protective portion 1023 being too wide, excessively encroaching on the surface of the photovoltaic cell 10 and reducing the light absorption efficiency of the photovoltaic cell 10. Setting a suitable width d2 for the third protective layer 1023 can enhance the protective effect of the protective layer 102 on the photovoltaic cell 10 and improve the light absorption efficiency of the photovoltaic cell 10.

[0070] Understandably, the width d2 of the third protective part 1023 refers to the distance between the side wall of the third protective part 1023 away from the second protective part 1022 and the side wall where the second protective part 1022 is located. For a detailed description of the side wall where the second protective part 1022 is located, please refer to the above description.

[0071] This utility model also provides a photovoltaic module, which includes the photovoltaic cell 10 provided in the above embodiments.

[0072] Furthermore, the photovoltaic module may also include a metal frame, a backsheet, photovoltaic glass, and an encapsulating film. The encapsulating film can be filled between the front and back of the photovoltaic cells 10, the photovoltaic glass, and adjacent photovoltaic cells 10. As a filler, it can be a transparent colloid with good light transmission and aging resistance. For example, the encapsulating film can be EVA film or POE film. The specific choice can be made according to the actual situation and is not limited here.

[0073] Photovoltaic glass can be applied to the encapsulant film on the front side of the photovoltaic cell 10. The photovoltaic glass can be ultra-clear glass, which has high light transmittance, high transparency, and superior physical, mechanical, and optical properties. For example, ultra-clear glass can achieve a light transmittance of over 93%. It can protect the photovoltaic cell 10 while minimizing impact on its efficiency. Simultaneously, the encapsulant film bonds the photovoltaic glass and the photovoltaic cell 10 together, providing sealing, insulation, waterproofing, and moisture protection for the photovoltaic cell 10.

[0074] The backsheet can be attached to the encapsulant film on the back of the photovoltaic cell 10. The backsheet provides protection and support for the photovoltaic cell 10, and has reliable insulation, water resistance, and aging resistance. Multiple options are available for the backsheet, typically tempered glass, acrylic glass, aluminum alloy TPT composite encapsulant film, etc., and the specific choice depends on the specific circumstances and is not limited here. The backsheet, photovoltaic cell 10, encapsulant film, and photovoltaic glass can be integrated within a metal frame. The metal frame serves as the main external support structure for the entire photovoltaic module, providing stable support and installation. For example, the photovoltaic module can be installed at the desired location using the metal frame.

[0075] This utility model provides a photovoltaic system, including the photovoltaic module provided in the above embodiment.

[0076] In this embodiment, the photovoltaic system can be applied in photovoltaic power plants, such as ground-mounted power plants, rooftop power plants, and floating power plants. It can also be applied to equipment or devices that utilize solar energy to generate electricity, such as user solar power supplies, solar streetlights, solar cars, and solar buildings. Of course, it is understood that the application scenarios of the photovoltaic system are not limited to these; that is, the photovoltaic system can be applied in all fields that require solar energy to generate electricity. Taking a photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a combiner box, and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic modules; for example, multiple photovoltaic modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the combiner box, which can collect the current generated by the photovoltaic array. The collected current flows through the inverter and is converted into AC power required by the mains power grid before being connected to the mains power grid to achieve solar power supply.

[0077] Although the present invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce a good effect.

[0078] Although the present invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and drawings are merely exemplary descriptions of the present invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Clearly, those skilled in the art can make various alterations and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and modifications of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and modifications.

Claims

1. A photovoltaic cell, characterized in that, The photovoltaic cell includes: A silicon substrate, including at least one sidewall located at the edge of the silicon substrate, and opposing first and second surfaces; The protective layer includes a first protective portion, a second protective portion, and a third protective portion. The first protective portion is located in at least a portion of the first surface adjacent to a sidewall of the edge of the silicon substrate. The second protective portion is located in at least one sidewall. The third protective portion is located in at least a portion of the second surface adjacent to a sidewall of the edge of the silicon substrate. The second protective portion connects the first protective portion and the third protective portion.

2. The photovoltaic cell according to claim 1, characterized in that, The photovoltaic cell also includes a passivation layer, which is located between the protective layer and the silicon substrate.

3. The photovoltaic cell according to claim 2, characterized in that, The photovoltaic cell further includes a first doped layer and a second doped layer; the silicon substrate includes a first region and a second region, both of which are located on the second surface of the silicon substrate, or the first region is located on the first surface of the silicon substrate and the second region is located on the second surface of the silicon substrate, the first doped layer is disposed in the first region and the second doped layer is disposed in the second region, and the doping polarities of the first doped layer and the second doped layer are different.

4. The photovoltaic cell according to claim 3, characterized in that, The first region is located on the first surface of the silicon substrate, and the second region is located on the second surface of the silicon substrate; The first doped layer is disposed on the first surface, located between the silicon substrate and the passivation layer, and the passivation layer and the first protective portion are stacked on at least a portion of the first doped layer.

5. The photovoltaic cell according to claim 4, characterized in that, The second doped layer is disposed on the second surface, located between the silicon substrate and the passivation layer, and the passivation layer and the third protective portion are stacked on at least a portion of the second doped layer.

6. The photovoltaic cell according to claim 3, characterized in that, Both the first region and the second region are located on the second surface of the silicon substrate, and the first region and the second region are alternately disposed on the second surface of the silicon substrate; The first doped layer and the second doped layer are alternately disposed on the second surface of the silicon substrate, and at least a portion of the second doped layer is stacked with the passivation layer and the third protective portion.

7. The photovoltaic cell according to claim 3, characterized in that, The width of the first protective part along the first direction is greater than 0 μm, and the width of the first protective part is less than or equal to 1000 μm, and the first direction intersects the extension direction of the protective layer.

8. The photovoltaic cell according to claim 5 or 6, characterized in that, Along the first direction, the distance between the side of the second doped layer near the second protective part and the sidewall where the second protective part is located is the first distance, which ranges from 0um to 500um, and the first direction intersects the extension direction of the protective layer.

9. The photovoltaic cell according to claim 8, characterized in that, The width of the third protective part along the first direction is greater than the first distance.

10. The photovoltaic cell according to claim 9, characterized in that, The width of the third protective part along the first direction is 50um-1000um.

11. The photovoltaic cell according to claim 1, characterized in that, The thickness of the protective layer is 4µm-60µm.

12. The photovoltaic cell according to claim 1, characterized in that, The refractive index of the protective layer ranges from 1.3 to 1.

8.

13. A photovoltaic module, characterized in that, The photovoltaic module includes the photovoltaic cell as described in any one of claims 1-12.

14. A photovoltaic system, characterized in that, The photovoltaic system includes the photovoltaic module as described in claim 13.

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