Temperature warning device for semiconductor process equipment and semiconductor process system
By adding a temperature control and acquisition module to the gas pipeline of semiconductor process equipment, real-time monitoring and early warning signals are generated, solving the problem of equipment not alarming in the existing technology and improving maintenance efficiency and equipment stability.
Patent Information
- Application Number
- CN202522205844.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-17
- Publication Date
- 2026-11-06
- Estimated Expiration
- 2035-10-17
AI Technical Summary
The gas pipeline temperature control device of existing semiconductor process equipment is controlled by only one controller and has only one temperature detection point. It cannot output actual pipeline temperature data, which leads to the equipment not alarming in abnormal situations, making maintenance difficult and time-consuming.
By adding a temperature control module and a temperature acquisition module to the gas pipeline, the main control module monitors the signals of both modules in real time, generates early warning signals, and issues alarms through the early warning module, thereby reducing false alarms and improving maintenance efficiency.
It enables real-time monitoring and accurate early warning of gas pipeline temperature, reduces the frequency of false alarms, reduces maintenance time and personnel load, and ensures stable equipment operation.
Smart Images
Figure CN224947982U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a temperature warning device for semiconductor process equipment and a semiconductor process system. Background Technology
[0002] The principle of the reaction chamber in semiconductor process equipment is to first turn the liquid precursor gas into a gaseous state at a certain temperature, mix it with the carrier gas and enter the chamber, and then decompose the gaseous precursor gas into the thin film required for the process at high temperature.
[0003] Currently, the gas pipeline temperature control device in semiconductor process equipment is controlled by only one controller, and there is only one temperature detection point. It can only output alarm signals and cannot output actual pipeline temperature data to the machine. If there is an abnormality at the detection point but it does not exceed the alarm value, or if the temperature control device malfunctions (communication error and jamming, only retaining the last sample data), the equipment will not alarm, ultimately leading to abnormal pipeline temperature, causing product scrapping and pipeline blockage. Because the machine does not alarm, troubleshooting is very difficult, time-consuming, and it is not easy to find the root cause of the problem in a timely manner. Utility Model Content
[0004] Therefore, it is necessary to provide a temperature warning device for semiconductor process equipment and a semiconductor process system to address the above-mentioned technical problems.
[0005] In a first aspect, this utility model provides a temperature warning device for semiconductor process equipment, the semiconductor process equipment including a gas pipeline and a reaction chamber connected to the gas pipeline, the temperature warning device comprising:
[0006] A temperature control module, connected to the gas pipeline, is used to control the temperature of the precursor gas in the gas pipeline and to detect the temperature of the gas pipeline in real time to obtain a first temperature signal.
[0007] A temperature acquisition module is installed on the outer wall of the gas pipeline to detect the temperature of the gas pipeline in real time and obtain a second temperature signal.
[0008] The main control module is connected to the temperature control module and the temperature acquisition module, and is used to receive the first temperature signal and the second temperature signal, and determine whether to generate an early warning signal based on the first temperature signal and the second temperature signal.
[0009] The early warning module, connected to the main control module, is used to receive the early warning signal and issue an alarm.
[0010] In one embodiment, the main control module further includes: a parsing unit, configured to parse the first temperature signal to obtain a first temperature value; and to parse the second temperature signal to obtain a second temperature value.
[0011] In one embodiment, the main control module is specifically used to: determine the difference between the first temperature value and the second temperature value; if the difference is greater than a preset difference, generate an early warning signal and send the early warning signal to the early warning module.
[0012] In one embodiment, the main control module is specifically used to: generate an early warning signal when both the first temperature value and the second temperature value are abnormal, and send the early warning signal to the early warning module.
[0013] In one embodiment, the main control module further includes a storage unit for storing the first temperature value and the second temperature value.
[0014] In one embodiment, the temperature control module includes a control unit and a heating unit. The control unit is connected to the main control module and the heating unit, and is used to receive a temperature control signal sent by the main control module, and heat the heating unit based on the temperature control signal to control the temperature of the precursor gas in the gas pipeline.
[0015] In one embodiment, the heating unit is an arc-shaped heating band covering the outer wall of the gas pipeline.
[0016] In one embodiment, the main control module is further configured to send the first temperature value and the second temperature value to the early warning module; the early warning module includes a display unit, which is configured to display the first temperature value and the second temperature value in real time.
[0017] In one embodiment, the temperature acquisition module is an infrared temperature sensor or a thermocouple sensor.
[0018] Secondly, this utility model also provides a semiconductor process system, including semiconductor process equipment and a temperature warning device as described in the first aspect above. The semiconductor process equipment includes a gas source, a gas pipeline, and a reaction chamber connected in sequence. The gas source is used to provide a precursor gas to the gas pipeline, and the gas pipeline is used to transport the precursor gas to the reaction chamber. The temperature warning device is used to detect and warn of the temperature of the precursor gas in the gas pipeline.
[0019] This utility model provides a temperature early warning device and a semiconductor process system for semiconductor process equipment. The temperature early warning device includes a temperature control module, a temperature acquisition module, a main control module, and an early warning module. The temperature control module is connected to the gas pipeline and controls the temperature of the precursor gas in the gas pipeline, and detects the temperature of the gas pipeline in real time to obtain a first temperature signal. The temperature acquisition module is disposed on the outer wall of the gas pipeline and detects the temperature of the gas pipeline in real time to obtain a second temperature signal. The main control module is connected to the temperature control module and the temperature acquisition module, and receives the first temperature signal and the second temperature signal, and determines whether to generate an early warning signal based on the first temperature signal and the second temperature signal. The early warning module is connected to the main control module, and receives the early warning signal and issues an alarm, significantly reducing false alarms caused by single-point temperature signal anomalies, reducing the workload of personnel on duty, and allowing the duty room to handle the early warning signal immediately upon receipt, preventing the semiconductor process equipment from being affected.
[0020] Details of one or more embodiments of this application are set forth in the following drawings and description to make other features, objects and advantages of this application more readily apparent. Attached Figure Description
[0021] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:
[0022] Figure 1 This is a structural block diagram of the temperature warning device for semiconductor process equipment in the first embodiment;
[0023] Figure 2 This is a structural block diagram of the temperature warning device for semiconductor process equipment in the second embodiment;
[0024] Figure 3 This is a structural block diagram of the temperature warning device for semiconductor process equipment in the third embodiment.
[0025] Among them, 100 is the gas source; 200 is the gas pipeline; 300 is the reaction chamber; 10 is the temperature control module; 20 is the temperature acquisition module; 30 is the main control module; 40 is the early warning module; 101 is the control unit; 102 is the heating unit; 301 is the analysis unit; and 302 is the storage unit. Detailed Implementation
[0026] To make the objectives, technical solutions, and advantages of this application clearer, the application is described and illustrated below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the application. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application without inventive effort are within the scope of protection of this application. Furthermore, it is understood that although the efforts made in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, modifications to design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as insufficient disclosure of the content of this application.
[0027] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments without conflict.
[0028] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. When an element is referred to as being "located" on another element, it may be directly disposed on the other element or may have an intervening element. When an element is considered to be "disposed on" another element, it may be directly disposed on the other element or may have an intervening element present. When an element is considered to be "fixed to" another element, it may be directly fixed to the other element or may have an intervening element present. The terms "first," "second," "third," etc., used in this application are merely to distinguish similar objects and do not represent a specific order of objects. The terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.
[0029] This utility model provides a temperature warning device for semiconductor process equipment. The semiconductor process equipment can be used for physical vapor deposition. Physical vapor deposition refers to the technique of vaporizing the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionizing them into ions, under vacuum conditions using physical methods, and depositing a thin film with a certain special function on the surface of a substrate through a low-pressure gas (or plasma) process.
[0030] Please see Figure 1 The semiconductor process equipment includes a gas source 100, a gas pipeline 200, and a reaction chamber 300 connected in sequence. The gas source provides precursor gas to the gas pipeline via a gas cylinder, and the gas pipeline is used to deliver the precursor gas to the reaction chamber. Please continue reading. Figure 1 The temperature warning device includes a temperature control module 10, a temperature acquisition module 20, a main control module 30, and a warning module 40.
[0031] The temperature control module 10 is connected to the gas pipeline in the semiconductor process equipment. The temperature control module 10 controls the temperature of the precursor gas in the gas pipeline to heat the (solid or liquid) precursor gas to a preset temperature, turning it into a gaseous precursor gas, which is then mixed with a carrier gas (e.g., argon) and enters the reaction chamber. Simultaneously, the temperature control module 10 has a built-in temperature sensor for real-time detection of the gas pipeline temperature, obtaining a first temperature signal. The temperature acquisition module 20 is disposed on the outer wall of the gas pipeline for real-time detection of the gas pipeline temperature, obtaining a second temperature signal. The temperature acquisition module can be an infrared temperature sensor or a thermocouple sensor; this embodiment does not specifically limit its application.
[0032] The main control module 30 is connected to the temperature control module 10, the temperature acquisition module 20, and the early warning module 40. It receives the first temperature signal sent by the temperature control module 10 and the second temperature signal sent by the temperature acquisition module 20. Based on the first and second temperature signals, it determines whether to generate an early warning signal. If so, it generates an early warning signal and sends it to the early warning module 40. When the early warning module 40 receives the early warning signal from the main control module 30, it issues an alarm message, allowing the duty room to take appropriate measures upon receiving the alarm.
[0033] The temperature early warning device for semiconductor process equipment provided by this utility model adds a temperature acquisition module to the outer wall of the gas pipeline of the semiconductor process equipment to detect the temperature of the gas pipeline and obtain a second temperature signal. The main control module monitors the first temperature signal and the second temperature signal in real time and determines whether to generate an early warning signal based on the first temperature signal and the second temperature signal. This greatly reduces false alarms caused by abnormal single-point temperature signals, reduces the workload of personnel on duty, and allows the duty room to handle the early warning signal immediately to avoid affecting the semiconductor process equipment.
[0034] In one embodiment, please refer to Figure 2 The main control module 30 further includes a parsing unit 301, which is used to parse the first temperature signal to obtain a first temperature value; and to parse the second temperature signal to obtain a second temperature value.
[0035] In this embodiment of the application, a parsing unit is added to the main control module. The parsing unit is used to intercept and parse the first temperature signal sent by the temperature control module to the main control module to obtain a first temperature value; and to intercept and parse the second temperature signal sent by the temperature acquisition module to the main control module to obtain a second temperature value.
[0036] The parsing unit efficiently and accurately decodes the received temperature signal, rapidly converting the analog temperature signal into a digital signal and further resolving it to obtain the specific temperature value. This ensures the accuracy and real-time nature of the temperature signal decoding, providing reliable data support for subsequent temperature warnings. This embodiment of the application implements the function of the parsing unit using an existing signal decoder.
[0037] In one embodiment, please continue to refer to Figure 2 The main control module 30 further includes a storage unit 302, which is connected to the parsing unit 301 and is used to store the first temperature value and the second temperature value.
[0038] In one embodiment, the main control module 30 is further configured to send the first temperature value and the second temperature value to the early warning module 40; the early warning module 40 includes a display unit, which is configured to display the first temperature value and the second temperature value in real time.
[0039] This embodiment of the application stores historical temperature data of the gas pipeline in real time through a storage unit and uploads this temperature data to the early warning module. The display unit in the early warning module displays this temperature data intuitively, making it easy for personnel in the duty room to grasp the temperature status of the gas pipeline.
[0040] In one embodiment, the main control module is specifically used to: determine the difference between the first temperature value and the second temperature value; if the difference is greater than a preset difference, generate an early warning signal and send the early warning signal to the early warning module.
[0041] In this embodiment, the main control module compares the first temperature value with the second temperature value. An early warning signal is generated only when the difference between the two temperatures is too large, and this signal is transmitted to the early warning module. Upon receiving the early warning signal, the on-duty personnel can handle it immediately, preventing product damage. This also significantly reduces false alarms caused by abnormal readings from single-point temperature sensors, thus reducing the workload for on-duty personnel.
[0042] In one embodiment, the main control module is specifically used to: generate an early warning signal when both the first temperature value and the second temperature value are abnormal, and send the early warning signal to the early warning module.
[0043] In this embodiment, a warning signal is generated only when the main control module determines that both the first temperature value and the second temperature value are abnormal, thereby reducing false alarms caused by abnormal fluctuations of a single temperature sensor.
[0044] The early warning module can achieve early warning by linking with the existing FDC (Fault Detection and Classification) system. The main control module uploads the early warning signal to the FDC system. After receiving the early warning signal, the FDC system can send a control signal to the main control module to control the equipment to stop, thereby reducing product scrapping and pipeline blockage caused by abnormal pipeline temperature.
[0045] In one embodiment, please refer to Figure 3 The temperature control module 10 includes a control unit 101 and a heating unit 102. The control unit 101 is connected to the main control module 30 and the heating unit 102, and is used to receive the temperature control signal sent by the main control module 30, and heat the heating unit 102 based on the temperature control signal to control the temperature of the precursor gas in the gas pipeline.
[0046] The control unit 101 can also be an independent controller, that is, the control unit 101 actively sends a temperature control signal and heats the heating unit 102 based on the temperature control signal.
[0047] In one embodiment, the heating unit is an arc-shaped heating band covering the outer wall of the gas pipeline.
[0048] In one embodiment, the temperature acquisition module is an infrared temperature sensor or a thermocouple sensor. However, the temperature acquisition module can also be other sensors used for measuring temperature, and this application does not limit the specific type of sensor.
[0049] This invention also provides a semiconductor process system, including semiconductor process equipment and a temperature warning device as described above. The semiconductor process equipment includes a gas source, a gas pipeline, and a reaction chamber connected in sequence. The gas source provides a precursor gas to the gas pipeline, and the gas pipeline delivers the precursor gas to the reaction chamber. The gas pipeline includes a liquid gas pipeline and a bulk gas pipeline. The temperature warning device detects and warns of the temperature of the precursor gas in the gas pipeline, significantly reducing false alarms caused by abnormal single-point temperature signals, reducing the workload of personnel on duty, and allowing the duty room to handle the warning signal immediately to prevent the semiconductor process equipment from being affected.
[0050] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0051] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A temperature warning device for a semiconductor process apparatus, the semiconductor process apparatus comprising a gas line and a reaction chamber connected to the gas line, characterized by, The temperature warning device includes: A temperature control module, connected to the gas pipeline, is used to control the temperature of the precursor gas in the gas pipeline and to detect the temperature of the gas pipeline in real time to obtain a first temperature signal. A temperature acquisition module is installed on the outer wall of the gas pipeline to detect the temperature of the gas pipeline in real time and obtain a second temperature signal. The main control module is connected to the temperature control module and the temperature acquisition module, and is used to receive the first temperature signal and the second temperature signal, and determine whether to generate an early warning signal based on the first temperature signal and the second temperature signal. The early warning module, connected to the main control module, is used to receive the early warning signal and issue an alarm.
2. The apparatus of claim 1, wherein, The main control module also includes: The parsing unit is used to parse the first temperature signal to obtain a first temperature value; and to parse the second temperature signal to obtain a second temperature value.
3. The apparatus of claim 2, wherein, The main control module is specifically used to: determine the difference between the first temperature value and the second temperature value; if the difference is greater than a preset difference, generate an early warning signal and send the early warning signal to the early warning module.
4. The apparatus of claim 2, wherein, The main control module is specifically used to: generate an early warning signal when both the first temperature value and the second temperature value are abnormal, and send the early warning signal to the early warning module.
5. The apparatus of claim 2, wherein, The main control module also includes: A storage unit is used to store the first temperature value and the second temperature value.
6. The apparatus of claim 1, wherein, The temperature control module includes a control unit and a heating unit. The control unit is connected to the main control module and the heating unit, and is used to receive the temperature control signal sent by the main control module, and heat the heating unit based on the temperature control signal to control the temperature of the precursor gas in the gas pipeline.
7. The apparatus of claim 6, wherein, The heating unit is an arc-shaped heating strip that covers the outer wall of the gas pipeline.
8. The apparatus of claim 2, wherein, The main control module is also used to send the first temperature value and the second temperature value to the early warning module; the early warning module includes a display unit, which is used to display the first temperature value and the second temperature value in real time.
9. The apparatus of claim 1, wherein, The temperature acquisition module is an infrared temperature sensor or a thermocouple sensor.
10. A semiconductor process system, characterized in that, Includes semiconductor process equipment and a temperature warning device as described in any one of claims 1 to 9. The semiconductor process equipment includes a gas source, a gas pipeline, and a reaction chamber connected in sequence. The gas source is used to provide precursor gas to the gas pipeline, and the gas pipeline is used to transport the precursor gas to the reaction chamber. The temperature warning device is used to detect and warn of the temperature of the precursor gas in the gas pipeline.